BC857BT,115 [NXP]
BC856T; BC857T series - PNP general purpose transistors SC-75 3-Pin;
| 型号： | BC857BT,115 |
| 厂家： | 
NXP |
| 描述： | BC856T; BC857T series - PNP general purpose transistors SC-75 3-Pin 开关 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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DISCRETE SEMICONDUCTORS
DATA SHEET
BC856T; BC857T series
PNP general purpose transistors
Product data sheet
2000 Nov 15
Supersedes data of 1999 Apr 26
NXP Semiconductors
Product data sheet
BC856T; BC857T
series
PNP general purpose transistors
FEATURES
PINNING
• Low current (max. 100 mA)
• Low voltage (max. 65 V).
PIN
1
DESCRIPTION
base
2
emitter
collector
APPLICATIONS
3
• General purpose switching and amplification, especially
in portable equipment.
DESCRIPTION
handbook, halfpage
PNP transistor in an SC-75 (SOT416) plastic package.
NPN complements: BC846T; BC847T series.
3
3
1
MARKING
2
1
2
MAM362
TYPE NUMBER
BC856AT
MARKING CODE
Top view
3A
3B
3E
3F
3G
BC856BT
BC857AT
BC857BT
BC857CT
Fig.1 Simplified outline (SC-75; SOT416) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
BC856AT; BC856BT
BC857AT; BC857BT; BC857CT
collector-emitter voltage
BC856AT; BC856BT
−
−
−80
V
V
−50
VCEO
open base
−
−
−
−
−
−
−
−65
V
V
V
BC857AT; BC857BT; BC857CT
emitter-base voltage
−45
VEBO
IC
open collector
−5
collector current (DC)
−100
−200
−100
150
mA
mA
mA
mW
°C
ICM
IBM
Ptot
Tstg
Tj
peak collector current
peak base current
total power dissipation
storage temperature
Tamb ≤ 25 °C; note 1
−65
−
+150
150
junction temperature
°C
Tamb
operating ambient temperature
−65
+150
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2000 Nov 15
2
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856T; BC857T series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
in free air; note 1
833
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
−15
UNIT
ICBO
collector-base cut-off current VCB = −30 V; IE = 0
−
−
−
−
−
−
nA
μA
nA
VCB = −30 V; IE = 0; Tj = 150 °C
VEB = −5 V; IC = 0
−5
IEBO
hFE
emitter cut-off current
DC current gain
−100
VCE = −5 V; IC = −2 mA
BC856AT; BC857AT
BC856BT; BC857BT
BC857CT
125
220
420
−
−
250
475
800
−200
−400
−700
−770
2.5
−
−
VCEsat
collector-emitter saturation
voltage
IC = −10 mA; IB = −0.5 mA
−
mV
mV
mV
mV
pF
IC = −100 mA; IB = −5 mA; note 1
IC = −2 mA; VCE = −5 V
−
−
VBE
base-emitter voltage
−580
−
−
IC = −10 mA; VCE = −5 V
−
Cc
Ce
fT
collector capacitance
emitter capacitance
transition frequency
VCB = −10 V; f = 1 MHz; IE = ie = 0
VEB = −0.5 V; f = 1 MHz; IC = ic = 0
−
−
−
10
−
−
pF
IC = −10 mA; VCE = −5 V;
100
−
MHz
f = 100 MHz
F
noise figure
IC = −200 μA; VCE = −5 V;
−
−
10
dB
RS = 2 kΩ; f = 1 kHz; B = 200 Hz
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2000 Nov 15
3
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856T; BC857T series
GRAPHICAL INFORMATION BC857AT
MGT711
MGT712
500
−1200
BE
(mV)
handbook, halfpage
handbook, halfpage
V
h
FE
−1000
400
(1)
(2)
(1)
−800
−600
−400
−200
0
300
(2)
200
(3)
(3)
100
0
−10
−2
−1
2
3
−2
−1
2
3
−10
−10
−1
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
(mA)
I
I
C
C
VCE = −5 V.
VCE = −5 V.
(1) Tamb = 150 °C.
(2) amb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
T
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
Fig.2 DC current gain; typical values.
MGT713
MGT714
4
−10
−1200
BEsat
handbook, halfpage
handbook, halfpage
V
(mV)
V
CEsat
−1000
(mV)
(1)
(2)
3
−10
−800
−600
−400
−200
0
(3)
2
−10
(1)
(3) (2)
−10
−1
2
3
−1
2
3
−10
−1
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
(mA)
I
I
C
C
IC/IB = 20.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2000 Nov 15
4
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856T; BC857T series
GRAPHICAL INFORMATION BC857BT
MGT715
MGT716
1000
−1200
BE
(mV)
handbook, halfpage
handbook, halfpage
V
h
FE
−1000
800
(1)
(2)
−800
−600
−400
−200
0
600
(1)
400
(3)
(2)
200
(3)
0
−10
−2
−1
2
3
−2
−1
2
3
−10
−10
−1
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
(mA)
I
I
C
C
VCE = −5 V.
VCE = −5 V.
(1) Tamb = 150 °C.
(2) amb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
T
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
Fig.6 DC current gain; typical values.
MGT717
MGT718
4
−10
−1200
BEsat
handbook, halfpage
handbook, halfpage
V
(mV)
V
CEsat
−1000
(mV)
(1)
(2)
3
−10
−800
−600
−400
−200
0
(3)
2
−10
(1)
(3) (2)
−10
−1
2
3
−1
2
3
−10
−1
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
(mA)
I
I
C
C
IC/IB = 20.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.9 Base-emitter saturation voltage as a
function of collector current; typical values.
2000 Nov 15
5
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856T; BC857T series
GRAPHICAL INFORMATION BC857CT
MGT719
MGT720
1000
−1200
BE
(mV)
handbook, halfpage
handbook, halfpage
V
h
FE
(1)
−1000
800
(1)
(2)
−800
−600
−400
−200
0
600
(2)
400
(3)
(3)
200
0
−10
−1
2
3
−2
−1
2
3
−10
−1
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
(mA)
I
I
C
C
VCE = −5 V.
VCE = −5 V.
(1) Tamb = 150 °C.
(2) amb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
T
Fig.11 Base-emitter voltage as a function of
collector current; typical values.
Fig.10 DC current gain; typical values.
MGT721
MGT722
4
−10
−1200
BEsat
handbook, halfpage
handbook, halfpage
V
(mV)
V
CEsat
−1000
(mV)
(1)
(2)
3
−10
−800
−600
−400
−200
0
(3)
2
−10
(1)
(3) (2)
−10
−1
2
3
−1
2
3
−10
−1
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
(mA)
I
I
C
C
IC/IB = 20.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.12 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.13 Base-emitter saturation voltage as a
function of collector current; typical values.
2000 Nov 15
6
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856T; BC857T series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT416
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
1
2
c
e
b
w
M
B
1
p
L
p
e
detail X
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
A
UNIT
b
c
D
E
e
e
H
L
p
Q
v
w
p
1
E
max
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
1.75
1.45
0.45
0.15
0.23
0.13
0.95
0.60
mm
0.1
1
0.5
0.2
0.2
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT416
SC-75
2000 Nov 15
7
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC856T; BC857T series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2000 Nov 15
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/03/pp9
Date of release: 2000 Nov 15
Document order number: 9397 750 07525
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