BC857CW,115 [NXP]

BC856W; BC857W; BC858W - PNP general purpose transistors SC-70 3-Pin;
BC857CW,115
型号: BC857CW,115
厂家: NXP    NXP
描述:

BC856W; BC857W; BC858W - PNP general purpose transistors SC-70 3-Pin

PC 开关 光电二极管 晶体管
文件: 总10页 (文件大小:90K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BC856W; BC857W; BC858W  
PNP general purpose transistors  
Product data sheet  
2002 Feb 04  
Supersedes data of 1999 Apr 12  
NXP Semiconductors  
Product data sheet  
BC856W; BC857W;  
BC858W  
PNP general purpose transistors  
FEATURES  
PINNING  
Low current (max. 100 mA)  
Low voltage (max. 65 V).  
PIN  
1
DESCRIPTION  
base  
2
emitter  
APPLICATIONS  
3
collector  
General purpose switching and amplification.  
DESCRIPTION  
PNP transistor in a SOT323 plastic package.  
3
handbook, halfpage  
NPN complements: BC846W, BC847W and BC848W.  
3
2
MARKING  
1
TYPE NUMBER  
BC856W  
MARKING CODE(1)  
3D*  
3A*  
3B*  
3H*  
3E*  
3F*  
3G*  
3M*  
BC856AW  
BC856BW  
BC857W  
1
2
Top view  
MAM048  
BC857AW  
BC857BW  
BC857CW  
BC858W  
Fig.1 Simplified outline (SOT323; SC70) and  
symbol.  
Note  
1. * = -: made in Hong Kong.  
* = t: made in Malaysia.  
2002 Feb 04  
2
 
NXP Semiconductors  
Product data sheet  
PNP general purpose transistors  
BC856W; BC857W; BC858W  
LIMITING VALUES  
In accordance with the Absolute Maximum System (IEC 60134).  
SYMBOL  
VCBO  
PARAMETER  
collector-base voltage  
CONDITIONS  
open emitter  
MIN.  
MAX.  
UNIT  
BC856W  
80  
V
V
V
BC857W  
50  
30  
BC858W  
VCEO  
collector-emitter voltage  
BC856W  
open base  
65  
V
V
V
V
BC857W  
45  
BC858W  
30  
VEBO  
IC  
emitter-base voltage  
collector current (DC)  
peak collector current  
peak base current  
total power dissipation  
storage temperature  
junction temperature  
operating ambient temperature  
open collector  
Tamb 25 °C; note 1  
5  
100  
200  
200  
200  
mA  
mA  
mA  
mW  
°C  
ICM  
IBM  
Ptot  
Tstg  
Tj  
65  
+150  
150  
°C  
Tamb  
65  
+150  
°C  
Note  
1. Refer to SOT323 standard mounting conditions.  
THERMAL CHARACTERISTICS  
SYMBOL  
Rth j-a  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
thermal resistance from junction to  
ambient  
in free air; note 1  
625  
K/W  
Note  
1. Refer to SOT323 standard mounting conditions.  
2002 Feb 04  
3
 
 
NXP Semiconductors  
Product data sheet  
PNP general purpose transistors  
BC856W; BC857W; BC858W  
CHARACTERISTICS  
Tamb = 25 °C; unless otherwise specified.  
SYMBOL  
ICBO  
PARAMETER  
CONDITIONS  
MIN.  
TYP. MAX. UNIT  
collector-base cut-off current  
VCB = 30 V; IE = 0  
1  
15  
4  
nA  
VCB = 30 V; IE = 0;  
Tj = 150 °C  
μA  
IEBO  
hFE  
emitter-base cut-off current  
DC current gain  
VEB = 5 V; IC = 0  
100  
nA  
IC = 2 mA; VCE = 5 V  
BC856W  
125  
125  
125  
220  
420  
475  
800  
250  
475  
800  
300  
600  
BC857W; BC858W  
BC856AW; BC857AW  
BC856BW; BC857BW  
BC857CW  
VCEsat  
VBEsat  
VBE  
collector-emitter saturation voltage  
IC = 10 mA; IB = 0.5 mA  
75  
250  
mV  
mV  
IC = 100 mA; IB = 5 mA;  
note 1  
base-emitter saturation voltage  
base-emitter voltage  
IC = 10 mA; IB = 0.5 mA  
700  
850  
mV  
mV  
IC = 100 mA; IB = 5 mA;  
note 1  
IC = 2 mA; VCE = 5 V  
IC = 10 mA; VCE = 5 V  
600  
650  
750  
820  
3
mV  
mV  
pF  
Cc  
Ce  
fT  
collector capacitance  
emitter capacitance  
transition frequency  
noise figure  
VCB = 10 V; IE = Ie = 0;  
f = 1 MHz  
VEB = 0.5 V; IC = Ic = 0;  
f = 1 MHz  
12  
pF  
VCE = 5 V; IC = 10 mA; 100  
f = 100 MHz  
MHz  
dB  
F
IC = 200 μA; VCE = 5 V;  
RS = 2 kΩ; f = 1 kHz;  
B = 200 Hz  
10  
Note  
1. Pulse test: tp 300 μs; δ ≤ 0.02.  
2002 Feb 04  
4
NXP Semiconductors  
Product data sheet  
PNP general purpose transistors  
BC856W; BC857W; BC858W  
MGT711  
MGT712  
500  
1200  
BE  
(mV)  
handbook, halfpage  
handbook, halfpage  
V
h
FE  
1000  
400  
(1)  
(2)  
(1)  
800  
600  
400  
200  
0
300  
(2)  
200  
(3)  
(3)  
100  
0
10  
2  
1  
2
3
2  
1  
2
3
10  
10  
1  
10  
10  
10  
(mA)  
10  
1  
10  
10  
10  
(mA)  
I
I
C
C
BC857AW; VCE = 5 V.  
(1) Tamb = 150 °C.  
(2) Tamb = 25 °C.  
BC857AW; VCE = 5 V.  
(1) Tamb = 55 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 55 °C.  
(3) Tamb = 150 °C.  
Fig.2 DC current gain as a function of collector  
current; typical values.  
Fig.3 Base-emitter voltage as a function of  
collector current; typical values.  
MGT713  
MGT714  
4
10  
1200  
BEsat  
handbook, halfpage  
handbook, halfpage  
V
(mV)  
V
CEsat  
1000  
(mV)  
(1)  
(2)  
3
10  
800  
(3)  
600  
2
400  
200  
0
10  
(1)  
(3) (2)  
10  
1  
2
3
1  
2
3
10  
1  
10  
10  
10  
(mA)  
10  
1  
10  
10  
10  
(mA)  
I
I
C
C
BC857AW; IC/IB = 20.  
(1) Tamb = 150 °C.  
BC857AW; IC/IB = 20.  
(1) Tamb = 55 °C.  
(2)  
T
amb = 25 °C.  
(2)  
Tamb = 25 °C.  
(3) Tamb = 55 °C.  
(3) Tamb = 150 °C.  
Fig.4 Collector-emitter saturation voltage as a  
function of collector current; typical values.  
Fig.5 Base-emitter saturation voltage as a  
function of collector current; typical values.  
2002 Feb 04  
5
NXP Semiconductors  
Product data sheet  
PNP general purpose transistors  
BC856W; BC857W; BC858W  
MGT715  
MGT716  
1000  
1200  
BE  
(mV)  
handbook, halfpage  
handbook, halfpage  
V
h
FE  
1000  
800  
(1)  
(2)  
800  
600  
400  
200  
0
600  
(1)  
400  
(3)  
(2)  
200  
(3)  
0
10  
2  
1  
2
3
2  
1  
2
3
10  
10  
1  
10  
10  
10  
(mA)  
10  
1  
10  
10  
10  
(mA)  
I
I
C
C
BC857BW; VCE = 5 V.  
(1) Tamb = 150 °C.  
(2) Tamb = 25 °C.  
BC857BW; VCE = 5 V.  
(1) Tamb = 55 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 55 °C.  
(3) Tamb = 150 °C.  
Fig.6 DC current gain as a function of collector  
current; typical values.  
Fig.7 Base-emitter voltage as a function of  
collector current; typical values.  
MGT717  
MGT718  
4
10  
1200  
BEsat  
handbook, halfpage  
handbook, halfpage  
V
(mV)  
V
CEsat  
1000  
(mV)  
(1)  
3
10  
800  
(2)  
600  
(3)  
2
400  
10  
(1)  
200  
(3) (2)  
0
10  
10  
1  
2
3
1  
2
3
10  
1  
10  
10  
10  
(mA)  
1  
10  
10  
10  
(mA)  
I
I
C
C
BC857BW; IC/IB = 20.  
(1) Tamb = 150 °C.  
BC857BW; IC/IB = 20.  
(1) Tamb = 55 °C.  
(2)  
T
amb = 25 °C.  
(2)  
Tamb = 25 °C.  
(3) Tamb = 55 °C.  
(3) Tamb = 150 °C.  
Fig.8 Collector-emitter saturation voltage as a  
function of collector current; typical values.  
Fig.9 Base-emitter saturation voltage as a  
function of collector current; typical values.  
2002 Feb 04  
6
NXP Semiconductors  
Product data sheet  
PNP general purpose transistors  
BC856W; BC857W; BC858W  
MGT719  
MGT720  
1000  
1200  
BE  
(mV)  
handbook, halfpage  
handbook, halfpage  
V
h
FE  
(1)  
1000  
800  
(1)  
(2)  
800  
600  
400  
200  
0
600  
(2)  
400  
(3)  
(3)  
200  
0
10  
1  
2
3
2  
1  
2
3
10  
1  
10  
10  
10  
(mA)  
10  
1  
10  
10  
10  
(mA)  
I
I
C
C
BC857CW; VCE = 5 V.  
(1) Tamb = 150 °C.  
(2) Tamb = 25 °C.  
BC857CW; VCE = 5 V.  
(1) Tamb = 55 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 55 °C.  
(3) Tamb = 150 °C.  
Fig.10 DC current gain as a function of collector  
current; typical values.  
Fig.11 Base-emitter voltage as a function of  
collector current; typical values.  
MGT721  
MGT722  
4
10  
1200  
BEsat  
handbook, halfpage  
handbook, halfpage  
V
(mV)  
V
CEsat  
1000  
(mV)  
(1)  
3
10  
800  
(2)  
600  
(3)  
2
400  
10  
(1)  
200  
(3) (2)  
0
10  
10  
1  
2
3
1  
2
3
10  
1  
10  
10  
10  
(mA)  
1  
10  
10  
10  
(mA)  
I
I
C
C
BC857CW; IC/IB = 20.  
(1) Tamb = 150 °C.  
BC857CW; IC/IB = 20.  
(1) Tamb = 55 °C.  
(2)  
T
amb = 25 °C.  
(2)  
Tamb = 25 °C.  
(3) Tamb = 55 °C.  
(3) Tamb = 150 °C.  
Fig.12 Collector-emitter saturation voltage as a  
function of collector current; typical values.  
Fig.13 Base-emitter saturation voltage as a  
function of collector current; typical values.  
2002 Feb 04  
7
NXP Semiconductors  
Product data sheet  
PNP general purpose transistors  
BC856W; BC857W; BC858W  
PACKAGE OUTLINE  
Plastic surface mounted package; 3 leads  
SOT323  
D
B
E
A
X
H
y
v M  
A
E
3
Q
A
A
1
c
1
2
L
p
e
b
w
M B  
1
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
max  
A
UNIT  
b
c
D
E
e
e
H
E
L
Q
v
w
p
p
1
1.1  
0.8  
0.4  
0.3  
0.25  
0.10  
2.2  
1.8  
1.35  
1.15  
2.2  
2.0  
0.45  
0.15  
0.23  
0.13  
mm  
0.1  
1.3  
0.65  
0.2  
0.2  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
SOT323  
SC-70  
97-02-28  
2002 Feb 04  
8
NXP Semiconductors  
Product data sheet  
PNP general purpose transistors  
BC856W; BC857W; BC858W  
DATA SHEET STATUS  
DOCUMENT  
STATUS(1)  
PRODUCT  
STATUS(2)  
DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please consult the most recently issued document before initiating or completing a design.  
2. The product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
URL http://www.nxp.com.  
DISCLAIMERS  
above those given in the Characteristics sections of this  
document is not implied. Exposure to limiting values for  
extended periods may affect device reliability.  
General Information in this document is believed to be  
accurate and reliable. However, NXP Semiconductors  
does not give any representations or warranties,  
expressed or implied, as to the accuracy or completeness  
of such information and shall have no liability for the  
consequences of use of such information.  
Terms and conditions of sale NXP Semiconductors  
products are sold subject to the general terms and  
conditions of commercial sale, as published at  
http://www.nxp.com/profile/terms, including those  
pertaining to warranty, intellectual property rights  
infringement and limitation of liability, unless explicitly  
otherwise agreed to in writing by NXP Semiconductors. In  
case of any inconsistency or conflict between information  
in this document and such terms and conditions, the latter  
will prevail.  
Right to make changes NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
No offer to sell or license Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Suitability for use NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in medical, military, aircraft, space or life support  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Export control This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
Quick reference data The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Applications Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) may cause permanent damage to  
the device. Limiting values are stress ratings only and  
operation of the device at these or any other conditions  
2002 Feb 04  
9
 
 
NXP Semiconductors  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were  
made to the content, except for the legal definitions and disclaimers.  
Contact information  
For additional information please visit: http://www.nxp.com  
For sales offices addresses send e-mail to: salesaddresses@nxp.com  
© NXP B.V. 2009  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
613514/04/pp10  
Date of release: 2002 Feb 04  
Document order number: 9397 750 09168  

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