BCM856DS,115 [NXP]
BCM856BS; BCM856BS/DG - PNP/PNP matched double transistors TSOP 6-Pin;
| 型号： | BCM856DS,115 |
| 厂家： | 
NXP |
| 描述： | BCM856BS; BCM856BS/DG - PNP/PNP matched double transistors TSOP 6-Pin 放大器 光电二极管 晶体管 |
| 文件： | 总14页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCM856BS; BCM856BS/DG
BCM856DS; BCM856DS/DG
PNP/PNP matched double transistors
Rev. 01 — 7 August 2008
Product data sheet
1. Product profile
1.1 General description
PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic
packages. The transistors are fully isolated internally.
Table 1.
Product overview
Type number
Package
NXP
Package configuration
very small
JEITA
BCM856BS
SOT363
SC-88
BCM856BS/DG
BCM856DS
SOT457
SC-74
small
BCM856DS/DG
1.2 Features
I Current gain matching
I Base-emitter voltage matching
I Drop-in replacement for standard double transistors
I AEC-Q101 qualified
1.3 Applications
I Current mirror
I Differential amplifier
1.4 Quick reference data
Table 2.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
VCEO collector-emitter voltage
IC
open base
-
-
−65
V
collector current
DC current gain
-
-
−100
450
mA
hFE
VCE = −5 V;
IC = −2 mA
200
290
BCM856BS; BCM856DS
NXP Semiconductors
PNP/PNP matched double transistors
Table 2.
Quick reference data …continued
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Per device
hFE1/hFE2
[1]
[2]
hFE matching
VCE = −5 V;
IC = −2 mA
0.9
-
1
-
-
VBE1−VBE2 VBE matching
VCE = −5 V;
IC = −2 mA
2
mV
[1] The smaller of the two values is taken as the numerator.
[2] The smaller of the two values is subtracted from the larger value.
2. Pinning information
Table 3.
Pinning
Pin
1
Description
emitter TR1
base TR1
Simplified outline
Graphic symbol
6
5
4
6
5
4
2
3
collector TR2
emitter TR2
base TR2
TR2
TR1
4
5
1
2
3
1
2
3
6
collector TR1
001aab555
sym018
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
plastic surface-mounted package; 6 leads
Version
BCM856BS
SC-88
SOT363
BCM856BS/DG
BCM856DS
SC-74
plastic surface-mounted package (TSOP6); 6 leads SOT457
BCM856DS/DG
BCM856BS_BCM856DS_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 August 2008
2 of 14
BCM856BS; BCM856DS
NXP Semiconductors
PNP/PNP matched double transistors
4. Marking
Table 5.
Marking codes
Type number
BCM856BS
Marking code[1]
*BS
PB*
DS
BCM856BS/DG
BCM856DS
BCM856DS/DG
R9
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Per transistor
Conditions
Min
Max
Unit
VCBO
VCEO
VEBO
IC
collector-base voltage
open emitter
open base
-
-
-
-
-
−80
−65
−5
V
collector-emitter voltage
emitter-base voltage
collector current
V
open collector
V
−100
−200
mA
mA
ICM
peak collector current
single pulse;
tp ≤ 1 ms
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
[1]
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
-
-
200
250
mW
mW
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
[1]
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
-
-
300
380
mW
mW
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
Tj
junction temperature
ambient temperature
storage temperature
-
150
°C
°C
°C
Tamb
Tstg
−55
−65
+150
+150
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
BCM856BS_BCM856DS_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 August 2008
3 of 14
BCM856BS; BCM856DS
NXP Semiconductors
PNP/PNP matched double transistors
6. Thermal characteristics
Table 7.
Thermal characteristics
Symbol Parameter
Per transistor
Conditions
Min
Typ
Max Unit
Rth(j-a)
thermal resistance from junction to
ambient
in free air
[1]
[1]
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
-
-
-
-
625
500
K/W
K/W
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
Per device
Rth(j-a)
thermal resistance from junction to
ambient
in free air
[1]
[1]
BCM856BS (SOT363)
BCM856BS/DG (SOT363)
-
-
-
-
416
328
K/W
K/W
BCM856DS (SOT457)
BCM856DS/DG (SOT457)
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per transistor
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = −30 V;
IE = 0 A
-
-
-
-
−15
−5
nA
VCB = −30 V;
IE = 0 A;
µA
Tj = 150 °C
IEBO
hFE
emitter-base cut-off
current
VEB = −5 V;
IC = 0 A
-
-
−100
nA
DC current gain
VCE = −5 V;
IC = −10 µA
-
250
290
−50
−200
−760
−920
-
VCE = −5 V;
IC = −2 mA
200
450
−200
−400
-
VCEsat
collector-emitter
saturation voltage
IC = −10 mA;
IB = −0.5 mA
-
-
-
-
mV
mV
mV
mV
IC = −100 mA;
IB = −5 mA
[1]
[1]
VBEsat
base-emitter saturation
voltage
IC = −10 mA;
IB = −0.5 mA
IC = −100 mA;
IB = −5 mA
-
BCM856BS_BCM856DS_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 August 2008
4 of 14
BCM856BS; BCM856DS
NXP Semiconductors
PNP/PNP matched double transistors
Table 8.
Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
[2]
[2]
VBE
base-emitter voltage
VCE = −5 V;
IC = −2 mA
−600
−650
−700
mV
VCE = −5 V;
IC = −10 mA
-
-
-
-
−760
mV
pF
Cc
Ce
fT
collector capacitance
emitter capacitance
transition frequency
noise figure
VCB = −10 V;
IE = ie = 0 A;
f = 1 MHz
2.2
VEB = −0.5 V;
IC = ic = 0 A;
f = 1 MHz
-
10
-
-
-
pF
VCE = −5 V;
IC = −10 mA;
f = 100 MHz
100
-
175
1.6
MHz
dB
NF
VCE = −5 V;
IC = −0.2 mA;
RS = 2 kΩ;
f = 10 Hz to
15.7 kHz
VCE = −5 V;
-
3.1
-
dB
IC = −0.2 mA;
RS = 2 kΩ;
f = 1 kHz;
B = 200 Hz
Per device
[3]
[4]
hFE1/hFE2 hFE matching
VCE = −5 V;
IC = −2 mA
0.9
-
1
-
-
VBE1−VBE2 VBE matching
VCE = −5 V;
IC = −2 mA
2
mV
[1] VBEsat decreases by about 1.7 mV/K with increasing temperature.
[2] VBE decreases by about 2 mV/K with increasing temperature.
[3] The smaller of the two values is taken as the numerator.
[4] The smaller of the two values is subtracted from the larger value.
BCM856BS_BCM856DS_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 August 2008
5 of 14
BCM856BS; BCM856DS
NXP Semiconductors
PNP/PNP matched double transistors
006aaa540
006aaa541
−0.20
600
I
(mA) = −2.5
−2.25
B
I
C
(A)
h
FE
−2.0
−1.75
−1.5
−1.25
−0.16
(1)
(2)
400
−0.12
−0.08
−0.04
0
−1.0
−0.75
−0.5
200
(3)
−0.25
0
−10
−2
−1
2
3
0
−2
−4
−6
−8
V
−10
(V)
−10
−1
−10
−10
−10
I (mA)
C
CE
Tamb = 25 °C
VCE = −5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 1. Collector current as a function of
Fig 2. DC current gain as a function of collector
current; typical values
collector-emitter voltage; typical values
006aaa542
006aaa543
−1.3
−10
V
BEsat
(V)
V
CEsat
(V)
−1.1
−0.9
−0.7
−0.5
−0.3
−0.1
−1
(1)
(2)
(3)
−1
(1)
(2)
(3)
−10
−10
−2
−1
2
3
−1
2
3
−10
−1
−10
−10
−10
−10
−1
−10
−10
−10
I
(mA)
I (mA)
C
C
IC/IB = 20
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. Base-emitter saturation voltage as a function
of collector current; typical values
Fig 4. Collector-emitter saturation voltage as a
function of collector current; typical values
BCM856BS_BCM856DS_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 August 2008
6 of 14
BCM856BS; BCM856DS
NXP Semiconductors
PNP/PNP matched double transistors
006aaa544
006aaa545
3
−1
10
V
BE
(V)
f
T
(MHz)
−0.8
2
10
−0.6
−0.4
10
−1
2
3
2
−10
−1
−10
−10
−10
−1
−10
−10
I
(mA)
I (mA)
C
C
VCE = −5 V; Tamb = 25 °C
VCE = −5 V; Tamb = 25 °C
Fig 5. Base-emitter voltage as a function of collector
current; typical values
Fig 6. Transition frequency as a function of collector
current; typical values
006aaa546
006aaa547
8
15
C
e
C
c
(pF)
13
(pF)
6
4
2
0
11
9
7
5
0
−2
−4
−6
−8
V
−10
(V)
0
−2
−4
−6
V
(V)
EB
CB
f = 1 MHz; Tamb = 25 °C
f = 1 MHz; Tamb = 25 °C
Fig 7. Collector capacitance as a function of
collector-base voltage; typical values
Fig 8. Emitter capacitance as a function of
emitter-base voltage; typical values
BCM856BS_BCM856DS_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 August 2008
7 of 14
BCM856BS; BCM856DS
NXP Semiconductors
PNP/PNP matched double transistors
8. Application information
V−
V
CC
OUT1
IN1
OUT2
IN2
TR1
TR2
R1
l
out
TR1
TR2
V+
006aaa524
006aaa526
Fig 9. Current mirror
Fig 10. Differential amplifier
9. Test information
9.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
10. Package outline
2.2
1.8
1.1
0.8
3.1
2.7
1.1
0.9
0.45
0.15
6
5
4
6
5
4
0.6
0.2
2.2 1.35
2.0 1.15
3.0 1.7
2.5 1.3
pin 1
index
pin 1 index
1
2
3
1
2
3
0.25
0.10
0.3
0.2
0.26
0.10
0.40
0.25
0.65
0.95
1.3
1.9
Dimensions in mm
06-03-16
Dimensions in mm
04-11-08
Fig 11. Package outline SOT363 (SC-88)
Fig 12. Package outline SOT457 (SC-74)
BCM856BS_BCM856DS_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 August 2008
8 of 14
BCM856BS; BCM856DS
NXP Semiconductors
PNP/PNP matched double transistors
11. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package Description
Packing quantity
3000
-115
-125
-115
-125
-115
-125
-115
-125
10000
-135
-165
-135
-165
-135
-165
-135
-165
[2]
[3]
[2]
[3]
[2]
[3]
[2]
[3]
BCM856BS
SOT363 4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
BCM856BS/DG SOT363 4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
BCM856DS
SOT457 4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
BCM856DS/DG SOT457 4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
[1] For further information and the availability of packing methods, see Section 15.
[2] T1: normal taping
[3] T2: reverse taping
12. Soldering
2.65
solder lands
0.4 (2×)
1.5
2.35
0.6
(4×)
0.5
(4×)
solder resist
solder paste
0.5
(4×)
0.6
(2×)
occupied area
Dimensions in mm
0.6
(4×)
1.8
sot363_fr
Fig 13. Reflow soldering footprint SOT363 (SC-88)
BCM856BS_BCM856DS_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 August 2008
9 of 14
BCM856BS; BCM856DS
NXP Semiconductors
PNP/PNP matched double transistors
1.5
solder lands
2.5
0.3
4.5
solder resist
occupied area
1.5
Dimensions in mm
preferred transport
direction during soldering
1.3
1.3
2.45
5.3
sot363_fw
Fig 14. Wave soldering footprint SOT363 (SC-88)
3.45
1.95
0.55
(6×)
solder lands
solder resist
0.45
(6×)
0.95
3.3 2.825
0.95
solder paste
occupied area
0.7
Dimensions in mm
(6×)
0.8
(6×)
2.4
sot457_fr
Fig 15. Reflow soldering footprint SOT457 (SC-74)
BCM856BS_BCM856DS_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 August 2008
10 of 14
BCM856BS; BCM856DS
NXP Semiconductors
PNP/PNP matched double transistors
5.3
1.5
(4×)
solder lands
1.475
1.475
solder resist
0.45
(2×)
5.05
occupied area
Dimensions in mm
preferred transport
direction during soldering
1.45
(6×)
2.85
sot457_fw
Fig 16. Wave soldering footprint SOT457 (SC-74)
BCM856BS_BCM856DS_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 August 2008
11 of 14
BCM856BS; BCM856DS
NXP Semiconductors
PNP/PNP matched double transistors
13. Revision history
Table 10. Revision history
Document ID
Release date
20080807
Data sheet status
Change notice
Supersedes
BCM856BS_BCM856DS_1
Product data sheet
-
-
BCM856BS_BCM856DS_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 August 2008
12 of 14
BCM856BS; BCM856DS
NXP Semiconductors
PNP/PNP matched double transistors
14. Legal information
14.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
14.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
14.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
14.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
15. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BCM856BS_BCM856DS_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 7 August 2008
13 of 14
BCM856BS; BCM856DS
NXP Semiconductors
PNP/PNP matched double transistors
16. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 8
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
Quality information . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information. . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
3
4
5
6
7
8
9
9.1
10
11
12
13
14
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
14.1
14.2
14.3
14.4
15
16
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 7 August 2008
Document identifier: BCM856BS_BCM856DS_1
相关型号：
SI9130DB
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