BCY78VIII [NXP]
PNP switching transistors; PNP开关晶体管
| 型号： | BCY78VIII |
| 厂家： | 
NXP |
| 描述： | PNP switching transistors |
| 文件： | 总8页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BCY78; BCY79
PNP switching transistors
1997 Jun 18
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
Philips Semiconductors
Product specification
PNP switching transistors
BCY78; BCY79
FEATURES
PINNING
PIN
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
DESCRIPTION
1
2
3
emitter
base
APPLICATIONS
collector, connected to case
• Switching and amplification.
DESCRIPTION
3
1
handbook, halfpa1ge
2
PNP switching transistor in a TO-18 metal package.
NPN complements: BCY58 and BCY59.
2
3
MAM263
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
BCY78
open emitter
open base
−
−
−32
V
BCY79
−45
V
VCEO
collector-emitter voltage
BCY78
−
−
−
−
−
−32
−45
−100
340
1
V
BCY79
V
IC
collector current (DC)
total power dissipation
mA
mW
W
Ptot
T
amb ≤ 45 °C
case ≤ 45 °C
T
hFE
DC current gain
IC = −2 mA; VCE = −5 V
BCY78/VII; BCY79/VII
BCY78/VIII; BCY79/VIII
BCY78/IX; BCY79/IX
BCY78/X
120
180
250
380
100
220
310
460
630
−
fT
transition frequency
turn-off time
IC = −10 mA; VCE = −5 V
MHz
ns
toff
ICon = −100 mA; IBon = −10 mA; IBoff = 10 mA −
400
1997 Jun 18
2
Philips Semiconductors
Product specification
PNP switching transistors
BCY78; BCY79
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
BCY78
−
−
−32
V
V
BCY79
−45
VCEO
collector-emitter voltage
BCY78
open base
−
−
−32
−45
−5
V
V
V
BCY79
VEBO
IC
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
open collector
−
−
−
−
−
−100
−200
−200
340
1
mA
mA
mA
mW
W
ICM
IBM
Ptot
Tamb ≤ 45 °C
case ≤ 45 °C
T
Tstg
Tj
storage temperature
−65
−
+150
200
+150
°C
junction temperature
°C
Tamb
operating ambient temperature
−65
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
VALUE
UNIT
K/W
K/W
thermal resistance from junction to ambient in free air
thermal resistance from junction to case
450
150
Rth j-c
1997 Jun 18
3
Philips Semiconductors
Product specification
PNP switching transistors
BCY78; BCY79
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
collector cut-off current
BCY78
IE = 0; VCB = −32 V
−
−
−2
−15
−10
nA
IE = 0; VCB = −32 V; Tamb = 150 °C
−
µA
ICBO
collector cut-off current
BCY79
IE = 0; VCB = −45 V
−
−
−
−2
−
−15
−10
−20
nA
µA
nA
IE = 0; VCB = −45 V; Tamb = 150 °C
IC = 0; VEB = −5 V
IEBO
hFE
emitter cut-off current
DC current gain
−
IC = −10 µA; VCE = −5 V
BCY78/VII; BCY79/VII
BCY78/VIII; BCY79/VIII
BCY78/IX; BCY79/IX
BCY78/X
−
140
200
270
340
−
−
−
−
30
40
100
hFE
hFE
hFE
DC current gain
IC = −2 mA; VCE = −5 V
IC = −10 mA; VCE = −1 V
IC = −100 mA; VCE = −1 V
BCY78/VII; BCY79/VII
BCY78/VIII; BCY79/VIII
BCY78/IX; BCY79/IX
BCY78/X
120
180
250
380
170
250
350
500
220
310
460
630
DC current gain
BCY78/VII; BCY79/VII
BCY78/VIII; BCY79/VIII
BCY78/IX; BCY79/IX
BCY78/X
80
180
260
360
500
−
120
160
240
400
630
1000
DC current gain
BCY78/VII; BCY79/VII
BCY78/VIII; BCY79/VIII
BCY78/IX; BCY79/IX
BCY78/X
40
45
60
60
−
−
−
−
−
−
−
−
−
VCEsat
VBEsat
VBE
collector-emitter saturation voltage IC = −10 mA; IB = −250 µA
IC = −100 mA; IB = −2.5 mA
−120 −250 mV
−400 −800 mV
−
base-emitter saturation voltage
IC = −10 mA; IB = −250 µA
IC = −100 mA; IB = −2.5 mA
IC = −10 µA; VCE = −5 V
−600 −700 −850 mV
−700 −850 −1200 mV
base-emitter voltage
−
−550
−
mV
IC = −2 mA; VCE = −5 V
−600 −650 −750 mV
IC = −10 mA; VCE = −1 V
−
−
−
−
−650
−
mV
mV
pF
IC = −100 mA; VCE = −1 V
IE = ie = 0; VCB = −10 V; f = 1 MHz
IC = ic = 0; VEB = −500 mV; f = 1 MHz
−750
−
Cc
Ce
fT
collector capacitance
emitter capacitance
transition frequency
−
−
−
7
15
−
pF
IC = −10 mA; VCE = −5 V; f = 100 MHz 100
MHz
1997 Jun 18
4
Philips Semiconductors
Product specification
PNP switching transistors
BCY78; BCY79
SYMBOL
PARAMETER
noise figure
CONDITIONS
MIN. TYP. MAX. UNIT
F
IC = −200 µA; VCE = −5 V; RS = 2 kΩ;
−
−
10
dB
f = 1 kHz; B = 200 Hz
Switching times (between 10% and 90% levels); see Fig.2
ton
td
tr
turn-on time
delay time
rise time
ICon = −10 mA; IBon = −1 mA;
Boff = 1 mA; test conditions A
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
100
50
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
I
50
toff
ts
turn-off time
storage time
fall time
700
600
100
100
35
tf
ton
td
tr
turn-on time
delay time
rise time
ICon = −100 mA; IBon = −10 mA;
IBoff = 10 mA; test conditions B
65
toff
ts
turn-off time
storage time
fall time
400
300
100
tf
V
B
V
C
BB
CC
n
R
R
V
(probe)
(probe)
o
oscilloscope
oscilloscope
450 Ω
450 Ω
R2
V
i
DUT
R1
MGD624
Test conditions A
Test conditions B
Vi = −9.8 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
Vi = −5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω.
VBB = 1.9 V; VCC = −3 V
R1 = 62 Ω; R2 = 470 Ω; RB = 470 Ω; RC = 100 Ω.
VBB = 3.4 V; VCC = −10.8 V
Oscilloscope input impedance Zi = 50 Ω.
Oscilloscope input impedance Zi = 50 Ω.
Fig.2 Test circuit for switching times.
1997 Jun 18
5
Philips Semiconductors
Product specification
PNP switching transistors
BCY78; BCY79
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT18/13
seating plane
α
j
B
w
M
M
M
B
A
1
b
k
D
1
2
3
a
A
D
A
L
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
a
b
D
D
j
k
L
w
α
1
5.31
4.74
0.47
0.41
5.45
5.30
4.70
4.55
1.03
0.94
1.1
0.9
15.0
12.7
mm
0.40
2.54
45°
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
B11/C7 type 3
JEDEC
EIAJ
SOT18/13
TO-18
97-04-18
1997 Jun 18
6
Philips Semiconductors
Product specification
PNP switching transistors
BCY78; BCY79
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jun 18
7
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© Philips Electronics N.V. 1997
SCA54
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Printed in The Netherlands
117047/00/02/pp8
Date of release: 1997 Jun 18
Document order number: 9397 750 01405
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