BD227 [NXP]
PNP power transistors; PNP功率晶体管
| 型号： | BD227 |
| 厂家： | 
NXP |
| 描述： | PNP power transistors |
| 文件： | 总8页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BD227; BD229; BD231
PNP power transistors
1997 Mar 04
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
Philips Semiconductors
Product specification
PNP power transistors
BD227; BD229; BD231
FEATURES
PINNING
PIN
• High current (max. 1.5 A)
• Low voltage (max. 80 V).
DESCRIPTION
1
2
emitter
collector, connected to metal part of
mounting surface
APPLICATIONS
3
base
• Driver stages in television circuits.
DESCRIPTION
handbook, halfpage
PNP power transistor in a TO-126; SOT32 plastic
package. NPN complements: BD226, BD228 and BD230.
2
3
1
MAM272
Top view
1
2
3
Fig.1 Simplified outline (TO-126; SOT32)
and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
collector-base voltage
BD227
CONDITIONS
open emitter
MIN.
TYP.
MAX.
UNIT
VCBO
−
−
−
−
−
−
−45
V
BD229
−60
V
V
BD231
−100
VCEO
collector-emitter voltage open base
BD227
−
−
−
−
−
−
−
−
−
−
−
−
−45
−60
−80
−3
V
V
V
A
W
BD229
BD231
ICM
Ptot
hFE
peak collector current
total power dissipation
DC current gain
T
mb ≤ 62 °C
12.5
250
−
IC = −150 mA; VCE = −2 V
40
25
−
IC = −1 A; VCE = −2 V
fT
transition frequency
IC = −50 mA; VCE = −5 V; f = 100 MHz
50
−
MHz
1997 Mar 04
2
Philips Semiconductors
Product specification
PNP power transistors
BD227; BD229; BD231
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
BD227
−
−
−
−45
V
V
V
BD229
−60
BD231
−100
VCEO
collector-emitter voltage
BD227
open base
−
−
−
−
−
−
−
−
−45
−60
−80
−5
V
V
V
V
A
A
A
W
BD229
BD231
VEBO
IC
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open collector
−1.5
−3
ICM
IBM
Ptot
Tstg
Tj
−1
Tmb ≤ 62 °C
12.5
+150
150
+150
−65
−
°C
°C
°C
Tamb
−65
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
note 1
VALUE
100
UNIT
K/W
K/W
thermal resistance from junction to ambient
Rth j-mb
thermal resistance from junction to mounting base
7
Note
1. Refer to TO-126; SOT32 standard mounting conditions.
1997 Mar 04
3
Philips Semiconductors
Product specification
PNP power transistors
BD227; BD229; BD231
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IE = 0; VCB = −30 V
MIN. TYP. MAX. UNIT
ICBO
collector cut-off current
−
−
−
−
−
−
−100 nA
−10 µA
IE = 0; VCB = −30 V; Tj = 125 °C
IC = 0; VEB = −5 V
VCE = −2 V; see Fig.2
IC = −5 mA
IEBO
hFE
emitter cut-off current
DC current gain
−100 nA
40
40
25
−
−
−
IC = −150 mA
−
250
−
IC = −1 A
−
VCEsat
VBEsat
VBE
collector-emitter saturation voltage IC = −1 A; IB = −0.1 A
−
−0.8
−1.1
−1.3
−
V
base-emitter saturation voltage
base-emitter voltage
IC = −1 A; IB = −0.1 A
−
−
V
IC = −1 A; VCE = −2 V; note 1
−
−
V
fT
transition frequency
IC = −50 mA; VCE = −5 V; f = 100 MHz −
IC = −150 mA; VCE = −2 V
50
1.3
MHz
DC current gain ratio of the
complementary pairs
−
1.6
hFE1
-----------
hFE2
Note
1.
V
BE decreases by about −2.3 mV/K with increasing temperature.
MGD843
120
h
FE
100
80
60
40
20
0
−1
2
3
4
10
1
10
10
10
10
I
(mA)
C
VCE = −2 V.
Fig.2 DC current gain; typical values.
1997 Mar 04
4
Philips Semiconductors
Product specification
PNP power transistors
BD227; BD229; BD231
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32
E
A
P
1
P
D
L
1
L
1
2
3
e
w
M
c
1
e
Q
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
(1)
L
1
UNIT
b
p
c
D
E
e
e
L
Q
P
P
w
A
1
1
max
2.7
2.3
0.88
0.65
0.60
0.45
11.1
10.5
7.8
7.2
16.5
15.3
1.5
0.9
3.2
3.0
3.9
3.6
mm
2.54
4.58
2.29
0.254
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
EIAJ
97-03-04
SOT32
TO-126
1997 Mar 04
5
Philips Semiconductors
Product specification
PNP power transistors
BD227; BD229; BD231
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Mar 04
6
Philips Semiconductors
Product specification
PNP power transistors
BD227; BD229; BD231
NOTES
1997 Mar 04
7
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© Philips Electronics N.V. 1997
SCA53
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
117047/00/02/pp8
Date of release: 1997 Mar 04
Document order number: 9397 750 01845
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