BF1107,215 [NXP]
BF1107 - MOSFET N-channel switching transistor TO-236 3-Pin;
| 型号： | BF1107,215 |
| 厂家： | 
NXP |
| 描述： | BF1107 - MOSFET N-channel switching transistor TO-236 3-Pin |
| 文件： | 总8页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF1107
N-channel single gate MOSFET
Rev. 04 — 9 January 2007
Product data sheet
1. Product profile
1.1 General description
The BF1107 is a depletion type field-effect transistor in a SOT23 package. The low loss
and high isolation capabilities of this MOSFET provide excellent RF switching functions.
Integrated diodes between gate and source and between gate and drain protect against
excessive input voltage surges. Drain and source are interchangeable.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Currentless RF switch
1.3 Applications
I Various RF switching applications such as:
N Passive loop through for VCR tuner
N Transceiver switching
1.4 Quick reference data
Table 1.
Symbol
Lins(on)
Quick reference data
Parameter
Conditions
Min Typ Max Unit
on-state insertion loss VSG = VDG = 0 V;
f = 50 MHz to 860 MHz
RS = RL = 50 Ω
RS = RL = 75 Ω
-
-
-
-
2.5
3.5
dB
dB
ISLoff
off-state isolation
VSG = VDG = 5 V;
f = 50 MHz to 860 MHz
RS = RL = 50 Ω
RS = RL = 75 Ω
30
30
-
-
-
dB
dB
Ω
-
-
RDSon
VGS(p)
drain-source on-state VGS = 0 V; ID = 1 mA
resistance
12
20
gate-source pinch-off VDS = 1 V; ID = 20 µA
-
−3
−4.5
V
voltage
BF1107
NXP Semiconductors
N-channel single gate MOSFET
2. Pinning information
Table 2.
Discrete pinning
Pin
1
Description
drain
Simplified outline
Symbol
[1]
[1]
3
1
2
source
gate
3
3
2
1
2
sym120
[1] Drain and source are interchangeable
3. Ordering information
Table 3.
Ordering information
Type number Package
Name
Description
Version
BF1107
-
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking
Type number
Marking code
BF1107
S3p
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VSD
VDG
VSG
ID
Parameter
Conditions
Min
Max
3
Unit
V
drain-source voltage
source-drain voltage
drain-gate voltage
source-gate voltage
drain current
-
-
3
V
-
7
V
-
7
V
-
10
+150
150
mA
°C
°C
Tstg
Tj
storage temperature
junction temperature
−65
-
BF1107_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 9 January 2007
2 of 8
BF1107
NXP Semiconductors
N-channel single gate MOSFET
6. Thermal characteristics
Table 6.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
Typ
Unit
[1]
thermal resistance from junction
to solder point
260
K/W
[1] Soldering point of the gate lead.
7. Static characteristics
Table 7.
Static characteristics
Tj = 25 °C.
Symbol
V(BR)GSS
VGS(p)
IDSX
Parameter
Conditions
Min Typ Max Unit
gate-source breakdown voltage
gate-source pinch-off voltage
drain cut-off current
VDS = 0 V; IGS = 0.1 mA
VDS = 1 V; ID = 20 µA
VGS = −5 V; VDS = 2 V
VGS = −5 V; VDS = 0 V
7
-
-
-
V
−3
-
−4.5
10
V
-
µA
nA
IGSS
gate leakage current
-
-
100
8. Dynamic characteristics
Table 8.
Dynamic characteristics
Common gate; Tamb = 25 °C.
Symbol
Parameter
Conditions
Min Typ
Max Unit
Lins(on)
on-state insertion loss
VSG = VDG = 0 V; f = 50 MHz to 860 MHz
RS = RL = 50 Ω
-
-
-
-
2.5
3.5
dB
dB
RS = RL = 75 Ω
ISLoff
off-state isolation
VSG = VDG = 5 V; f = 50 MHz to 860 MHz
RS = RL = 50 Ω
30
30
-
-
-
dB
dB
Ω
RS = RL = 75 Ω
-
-
RDSon
Cig
drain-source on-state
resistance
VGS = 0 V; ID = 1 mA
12
20
input capacitance at gate
f = 1 MHz
VSG = VDG = 5 V
VSG = VDG = 0 V
f = 1 MHz
-
-
0.9
1.5
-
pF
pF
2
Cog
output capacitance at gate
VSG = VDG = 5 V
VSG = VDG = 0 V
-
-
0.9
1.5
-
pF
pF
2
BF1107_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 9 January 2007
3 of 8
BF1107
NXP Semiconductors
N-channel single gate MOSFET
001aaf760
001aaf780
0
0
L
ins(on)
(dB)
(2)
(1)
ISL
off
(dB)
−1
−2
−3
−4
−5
−20
−40
−60
(2)
(1)
2
3
2
3
10
10
10
10
10
10
f (MHz)
f (MHz)
(1) RS = RL = 50 Ω
(2) RS = RL = 75 Ω
VSG = VDG = 0 V
(1) RS = RL = 50 Ω
(2) RS = RL = 75 Ω
VSG = VDG = 5 V
Fig 1. On-state insertion loss as a function of
frequency; typical values
Fig 2. Off-state isolation as a function of frequency;
typical values
001aaf781
0
RL ; RL
in
out
(dB)
−5
−10
−15
−20
−25
(1)
(2)
2
3
10
10
10
f (MHz)
(1) RS = RL = 50 Ω
(2) RS = RL = 75 Ω
VSG = VDG = 0 V
Fig 3. Input and output return loss (on-state) as a function of frequency; typical values
BF1107_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 9 January 2007
4 of 8
BF1107
NXP Semiconductors
N-channel single gate MOSFET
9. Package outline
Plastic surface-mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-11-04
06-03-16
SOT23
TO-236AB
Fig 4. Package outline SOT23
BF1107_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 9 January 2007
5 of 8
BF1107
NXP Semiconductors
N-channel single gate MOSFET
10. Abbreviations
Table 9.
Abbreviations
Description
Acronym
MOSFET
RF
Metal-Oxide Semiconductor Field-Effect Transistor
Radio Frequency
VCR
Videocassette Recorder
11. Revision history
Table 10. Revision history
Document ID
BF1107_4
Release date
20070109
Data sheet status
Change notice
Supersedes
Product data sheet
-
BF1107_1107W_3
Modifications:
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Symbol notation has been adapted to comply with the current guidelines of NXP
Semiconductors.
• Product type BF1107W has been removed from this data sheet.
BF1107_1107W_3
(9397 750 05776)
19990514
19980622
19980407
Product data sheet
Product data sheet
Preliminary data sheet
-
-
-
BF1107_2
BF1107_2
(9397 750 03969)
BF1107_N_1
-
BF1107_N_1
(9397 750 03695)
BF1107_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 9 January 2007
6 of 8
BF1107
NXP Semiconductors
N-channel single gate MOSFET
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of a NXP Semiconductors product can reasonably be expected to
12.2 Definitions
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
13. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
BF1107_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 9 January 2007
7 of 8
BF1107
NXP Semiconductors
N-channel single gate MOSFET
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Static characteristics. . . . . . . . . . . . . . . . . . . . . 3
Dynamic characteristics . . . . . . . . . . . . . . . . . . 3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 7
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 7
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . . 7
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 9 January 2007
Document identifier: BF1107_4
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