BF1108RT/R [NXP]
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC, SMD, SC-61B, 4 PIN, FET RF Small Signal;
| 型号： | BF1108RT/R |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC, SMD, SC-61B, 4 PIN, FET RF Small Signal 晶体 开关 射频开关 小信号场效应晶体管 射频小信号场效应晶体管 光电二极管 |
| 文件： | 总12页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BF1108; BF1108R
Silicon RF switches
Product specification
1999 Nov 18
Supersedes data of 1999 Aug 19
Philips Semiconductors
Product specification
Silicon RF switches
BF1108; BF1108R
FEATURES
• Specially designed for low loss RF switching
up to 1 GHz.
4
3
APPLICATIONS
• Various RF switching applications such as:
– Passive loop through for VCR tuner
– Transceiver switching.
1
2
Top view
MSB014
Marking code: NGp.
DESCRIPTION
Fig.1 Simplified outline (SOT143B).
These switches are a combination of a depletion type
field-effect transistor and a bandswitching diode in an
SOT143B (BF1108) or SOT143R (BF1108R) package.
The low loss and high isolation capabilities of these
devices provide excellent RF switching functions. The
gate of the MOSFET can be isolated from ground with the
diode, resulting in low losses. Integrated diodes between
gate and source and between gate and drain protect
against excessive input voltage surges.
3
4
2
1
PINNING
Top view
MSB035
PIN
1
DESCRIPTION
FET gate; diode anode
Marking code: NHp.
2
diode cathode
source; note 1
drain; note 1
3
Fig.2 Simplified outline (SOT143R).
4
Note
1. Drain and source are interchangeable.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
losses (on-state)
CONDITIONS
MIN.
TYP. MAX. UNIT
2
s21(on)
RS = RL = 50 Ω;
f ≤ 1 GHz
−
−
2
dB
dB
Ω
2
s21(off)
isolation (off-state)
30
−
−
−
RDSon
VGSoff
drain-source on-resistance
pinch-off voltage
VCS = 0; ID = 1 mA
12
−3
20
−4
ID = 20 µA; VDS = 1 V
−
V
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 Nov 18
2
Philips Semiconductors
Product specification
Silicon RF switches
BF1108; BF1108R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
FET
PARAMETER
MIN.
MAX.
UNIT
VDS
VSD
VDG
VSG
ID
drain-source voltage
source-drain voltage
drain-gate voltage
source-gate voltage
drain current
−
−
−
−
−
3
3
7
7
V
V
V
V
10
mA
Diode
VR
IF
continuous reverse voltage
continuous forward current
−
−
35
V
100
mA
FET and diode
Tstg
Tj
storage temperature
junction temperature
−65
+150
150
°C
°C
−
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
250
UNIT
Rth j-s
thermal resistance from junction to soldering point note 1
K/W
Note
1. Soldering point of FET gate and diode anode lead.
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
FET
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)GSS gate-source breakdown voltage
VDS = 0; IGS = 0.1 mA
VDS = 1 V; ID = 20 µA
VGS = −5 V; VDS = 2 V
VGS = −5 V; VDS = 0
VGS = 0; ID = 1 mA
7
−
−
−
−
−
−
V
VGSoff
IDSX
gate-source pinch-off voltage
drain-source leakage current
gate cut-off current
−3
−
−4
10
100
20
V
µA
nA
Ω
IGSS
−
RDSon
drain-source on-state resistance
12
Diode
VF
forward voltage
reverse current
IF = 10 mA
VR = 25 V
−
−
−
−
−
1
V
IR
50
1
nA
µA
VR = 20 V; Tamb = 75 °C −
1999 Nov 18
3
Philips Semiconductors
Product specification
Silicon RF switches
BF1108; BF1108R
DYNAMIC CHARACTERISTICS
Common cathode; Tamb = 25 °C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
FET and diode
2
s21(on)
losses (on-state)
VSC = VDC = 0; RS = RL = 50 Ω;
IF = 0; note 1; f ≤ 1 GHz
−
−
2
−
3
−
−
−
dB
dB
dB
dB
dB
dB
V
SC = VDC = 0; RS = RL = 50 Ω; IF = 0;
f = 1 GHz
SC = VDC = 0; RS = RL = 75 Ω; IF = 0;
−
1.3
−
V
−
f ≤ 1 GHz
2
s21(off)
isolation (off-state)
VSC = VDC = 5 V; RS = RL = 50 Ω;
IF = 1 mA; f ≤ 1 GHz
30
−
−
VSC = VDC = 5 V; RS = RL = 50 Ω;
38
−
IF = 1 mA; f = 1 GHz
VSC = VDC = 5 V; RS = RL = 75 Ω;
IF = 1 mA; f ≤ 1 GHz
30
RDSon
Cic
drain-source on-resistance VCS = 0; ID = 1 mA
input capacitance; note 2 VSC = VDC = 5 V; IF = 1 mA; f = 1 MHz
SC = VDC = 0; IF = 0; f = 1 MHz
−
−
−
−
−
12
1
20
−
Ω
pF
pF
pF
pF
V
0.65
1
0.9
−
Coc
output capacitance; note 2 VSC = VDC = 5 V; IF = 1 mA; f = 1 MHz
VSC = VDC = 0; IF = 0; f = 1 MHz
0.65
0.9
Diode
Cd
rD
diode capacitance
f = 1 MHz; VR = 0
−
−
1.1
−
pF
diode forward resistance
IF = 2 mA; f = 100 MHz; note 3
−
0.7
Ω
Notes
1. IF = diode forward current.
2. Cic is the series connection of Csg and Cgc; Coc is the series connection of Cdg and Cgc.
3. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
d
s
s
d
handbook, halfpage
MBL027
g, a
c
c
g, a
SOT143B
SOT143R
Fig.3 Simplified diagram.
1999 Nov 18
4
Philips Semiconductors
Product specification
Silicon RF switches
BF1108; BF1108R
MGS358
MGS357
0
0
handbook, halfpage
handbook, halfpage
2
|s
|
21(on)
(dB)
2
|s
|
21(off)
(dB)
−1
−2
−3
−4
−20
−40
−60
0
400
800
1200
0
400
800
1200
f (MHz)
f (MHz)
VSC = VDC = 0 V; RS = RL = 50 Ω; IF = 0 mA (diode forward current);
VSC = VDC = 5 V; RS = RL = 50 Ω; IF = 1 mA (diode forward current);
Measured in test circuit (Fig.6).
Measured in test circuit (Fig.6).
Fig.4 Losses (on-state) as a function of
frequency; typical values.
Fig.5 Isolation (off-state) as a function of
frequency; typical values.
V
1 nF
100 kΩ
47 kΩ
BF1108/BF1108R
50 Ω
50 Ω
input
output
1 nF
1 nF
4.7 kΩ
100 kΩ
1 nF
MBL028
V
On-state: V = 0 V.
Off-state: V = 5 V.
Fig.6 Test circuit.
5
1999 Nov 18
Philips Semiconductors
Product specification
Silicon RF switches
BF1108; BF1108R
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
H
v
M
A
E
e
b
w
M
B
p
4
3
Q
A
A
1
c
1
2
L
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1
0.9
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
0.1
mm
1.9
1.7
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT143B
1999 Nov 18
6
Philips Semiconductors
Product specification
Silicon RF switches
BF1108; BF1108R
Plastic surface mounted package; reverse pinning; 4 leads
SOT143R
D
B
E
A
X
y
H
v
M
A
E
e
b
w
M
B
p
3
4
Q
A
A
1
c
2
1
L
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1
0.9
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.55
0.25
0.45
0.25
0.1
mm
1.9
1.7
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-03-10
99-09-13
SOT143R
SC-61B
1999 Nov 18
7
Philips Semiconductors
Product specification
Silicon RF switches
BF1108; BF1108R
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Nov 18
8
Philips Semiconductors
Product specification
Silicon RF switches
BF1108; BF1108R
NOTES
1999 Nov 18
9
Philips Semiconductors
Product specification
Silicon RF switches
BF1108; BF1108R
NOTES
1999 Nov 18
10
Philips Semiconductors
Product specification
Silicon RF switches
BF1108; BF1108R
NOTES
1999 Nov 18
11
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68
SCA
© Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125004/03/pp12
Date of release: 1999 Nov 18
Document order number: 9397 750 06477
相关型号：
BF1109,215
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, ROHS COMPLIANT, PLASTIC, SOT-4, 4 PIN, FET RF Small Signal
NXP
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