BF246A [NXP]

N-channel silicon junction field-effect transistors; N-沟道硅结型场效应晶体管


型号：	BF246A
厂家：	NXP
描述：	N-channel silicon junction field-effect transistors N-沟道硅结型场效应晶体管晶体晶体管场效应晶体管
文件：	总5页 (文件大小：41K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DISCRETE SEMICONDUCTORS

DATA SHEET

BF246A; BF246B; BF246C;

BF247A; BF247B; BF247C

N-channel silicon junction

field-effect transistors

Product speciﬁcation

1996 Jul 29

Supersedes data of April 1995

File under Discrete Semiconductors, SC07

Philips Semiconductors

Product speciﬁcation

N-channel silicon junction

ﬁeld-effect transistors

BF246A; BF246B; BF246C;

BF247A; BF247B; BF247C

FEATURES

PINNING

• Interchangeability of drain and source connections

• High I_DSSrange

SYMBOL

DESCRIPTION

BF246A; BF246B; BF246C

• Frequency up to 450 MHz.

drain

gate

APPLICATIONS

source

• VHF and UHF amplifiers

• Mixers

BF247A; BF247B; BF247C

drain

source

gate

• General purpose switching.

DESCRIPTION

General purpose N-channel symmetrical silicon junction

field-effect transistors in a plastic TO-92 variant package.

handbook, halfpage

CAUTION

MAM257

The device is supplied in an antistatic package. The

gate-source input must be protected against static

discharge during transport or handling.

Fig.1 Simplified outline (TO-92 variant)

and symbol.

QUICK REFERENCE DATA

SYMBOL

V_DS

V_GSoff

I_DSS

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

±25

UNIT

drain-source voltage

gate-source cut-off voltage

drain current

−

I_D= 10 nA; V_DS= 15 V

V_DS= 15 V; V_GS= 0

−0.6

−14.5

BF246A; BF247A

110

−

BF246B; BF247B

140

250

400

−

BF246C; BF247C

P_tot

y_fs

total power dissipation

forward transfer admittance

up to T_amb= 50 °C

I_D= 10 mA; V_DS= 15 V;

f = 1 kHz

C_rs

T_j

reverse transfer capacitance

operating junction temperature

I_D= 10 mA; V_DS= 15 V;

f = 1 MHz

−

3.5

−

150

°C

1996 Jul 29

Philips Semiconductors

Product speciﬁcation

N-channel silicon junction

ﬁeld-effect transistors

BF246A; BF246B; BF246C;

BF247A; BF247B; BF247C

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

drain-source voltage

CONDITIONS

MIN.

MAX.

±25

UNIT

V_DS

I_G

−

gate current

°C

P_tot

T_stg

T_j

total power dissipation

storage temperature

operating junction temperature

up to T_amb= 50 °C

400

+150

150

−65

−

°C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

250

UNIT

R_{th j-a}

thermal resistance from junction to ambient in free air

K/W

STATIC CHARACTERISTICS

_amb= 25 °C; unless otherwise specified.

SYMBOL PARAMETER

V_(BR)GSSgate-source breakdown voltage

CONDITIONS

I_G= −1 µA; V_DS= 0

MIN.

−25

TYP.

MAX.

UNIT

−

V_GSoff

V_GS

gate-source cut-off voltage

gate-source voltage

BF246A; BF247A

BF246B; BF247B

BF246C; BF247C

drain current

I_D= 10 nA; V_DS= 15 V

−0.6

−14.5

I_D= 200 µA; V_DS= 15 V

−1.5

−3.0

−5.5

−

−4.0

−7.0

−12.0

I_DSS

V_GS= 0; V_DS= 15 V; note 1

BF246A; BF247A

BF246B; BF247B

BF246C; BF247C

gate leakage current

110

−

140

250

−5

I_GSS

V_GS= −15 V; V_DS= 0

Note

1. Measured under pulse conditions: t_p= 300 µs; δ ≤ 0.02.

DYNAMIC CHARACTERISTICS

T_amb= 25 °C; unless otherwise specified.

SYMBOL

PARAMETER

input capacitance

CONDITIONS

MIN. TYP. MAX. UNIT

C_is

C_rs

C_os

y_fs

I_D= 10 mA; f = 1 MHz; V_DS= 15 V

I_D= 10 mA; f = 1 kHz; V_DS= 15 V

g_fs= 0.7 of its value at 1 kHz; V_GS= 0

−

reverse transfer capacitance

output capacitance

3.5

forward transfer admittance

cut-off frequency

450

MHz

f_gfs

1996 Jul 29

Philips Semiconductors

Product speciﬁcation

N-channel silicon junction

ﬁeld-effect transistors

BF246A; BF246B; BF246C;

BF247A; BF247B; BF247C

PACKAGE OUTLINE

handbook, full pagewidth

0.40

min

4.2 max

1.7

1.4

5.2 max

12.7 min

0.48

0.40

4.8

max

2.54

0.66

0.56

(1)

MBC015 - 1

2.5 max

Dimensions in mm.

(1) Terminal dimensions in this zone are uncontrolled.

Fig.2 TO-92 variant.

1996 Jul 29

Philips Semiconductors

Product speciﬁcation

N-channel silicon junction

ﬁeld-effect transistors

BF246A; BF246B; BF246C;

BF247A; BF247B; BF247C

DEFINITIONS

Data Sheet Status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

1996 Jul 29

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