BF512,235 [NXP]
BF512 - N-channel silicon FET TO-236 3-Pin;
| 型号： | BF512,235 |
| 厂家： | 
NXP |
| 描述： | BF512 - N-channel silicon FET TO-236 3-Pin |
| 文件： | 总9页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BF510 to 513
N-channel silicon field-effect
transistors
Product specification
December 1997
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors
BF510 to 513
DESCRIPTION
MARKING CODE
Asymmetrical N-channel planar
epitaxial junction field-effect
BF510 = S6p
BF511 = S7p
BF512 = S8p
BF513 = S9p
transistors in the miniature plastic
envelope intended for applications up
to the v.h.f. range in hybrid thick and
thin-film circuits. Special features are
the low feedback capacitance and the
low noise figure. These features
make the product very suitable for
applications such as the r.f. stages in
f.m. portables (BF510), car radios
(BF511) and mains radios (BF512) or
the mixer stage (BF513).
3
handbook, halfpage
d
s
g
PINNING - SOT23
1
2
1
2
3
= gate
Top view
MAM385
= drain
= source
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Drain-source voltage
VDS
ID
max.
max.
20
30
V
Drain current (DC or average)
Total power dissipation
up to Tamb = 40 C
mA
Ptot
max.
250
mW
BF510
0.7
511
512
6
513
Drain current
2.5
7.0
10 mA
18 mA
V
DS = 10 V; VGS = 0
IDSS
3.0
12
Transfer admittance (common source)
VDS = 10 V; VGS = 0; f = 1 kHz
Feedback capacitance
yfs
2.5
4
6
7 mS
VDS = 10 V; VGS = 0
Crs
Crs
typ.
typ.
0.3
0.3
pF
V
DS = 10 V; ID = 5 mA
0.3
0.3 pF
Noise figure at optimum source admittance
GS = 1 mS; BS = 3 mS; f = 100 MHz
VDS = 10 V; VGS = 0
F
F
typ.
typ.
1.5
1.5
dB
VDS = 10 V; ID = 5 mA
1.5
1.5 dB
December 1997
2
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors
BF510 to 513
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
VDS
VDGO
ID
max.
20 V
20 V
Drain-gate voltage (open source)
Drain current (DC or average)
Gate current
max.
max.
max.
max.
30 mA
10 mA
250 mW
IG
Ptot
Tstg
Tj
Total power dissipation up to Tamb = 40 C (note 1)
Storage temperature range
Junction temperature
65 to 150 C
max.
150 C
THERMAL RESISTANCE
From junction to ambient (note 1)
Rth j-a
=
430 K/W
Note
1. Mounted on a ceramic substrate of 8 mm 10 mm 0.7 mm.
STATIC CHARACTERISTICS
Tamb = 25 C
BF510
511
512
513
Gate cut-off current
VGS = 0.2 V; VDS = 0
Gate-drain breakdown voltage
IS = 0; ID = 10 A
IGSS
10
10
20
10
20
10 nA
20 V
V(BR)GDO
IDSS
20
Drain current
<
0.7
3.0
2.5
7.0
6
12
10 mA
18 mA
V
DS = 10 V; VGS = 0
Gate-source cut-off voltage
ID = 10 A; VDS = 10 V
V(P)GS
typ.
0.8
1.5
2.2
3 V
December 1997
3
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors
BF510 to 513
DYNAMIC CHARACTERISTICS
Measuring conditions (common source):
VDS = 10 V; VGS = 0; Tamb = 25 C for BF510 and BF511
VDS = 10 V; ID = 5 mA; Tamb = 25 C for BF512 and BF513
y-parameters (common source)
Input capacitance at f = 1 MHz
Input conductance at f = 100 MHz
BF510
5
511
5
512
5
513
5 pF
Cis
gis
typ.
typ.
100
0.4
0.5
2.5
90
0.4
0.5
4.0
60
50 S
0.4 pF
0.5 pF
3.5 mS
7.0 mS
5.0 mS
3 pF
0.4
0.5
4.0
6.0
5.0
3
Feedback capacitance at f = 1 MHz
Crs
Transfer admittance at f = 1 kHz
VGS = 0 instead of ID = 5 mA
yfs
yfs
yfs
Cos
Transfer admittance at f = 100 MHz
Output capacitance at f = 1 MHz
Output conductance at f = 1 MHz
Output conductance at f = 100 MHz
typ.
3.5
3
5.5
3
gos
60
80
55
100
70
120 S
90 S
gos
typ.
35
Noise figure at optimum source admittance
GS = 1 mS; BS = 3 mS;
f = 100 MHz
F
typ.
1.5
1.5
1.5
1.5 dB
MDA275
MDA276
1.5
10
handbook, halfpage
handbook, halfpage
|y
|
fs
BF513
C
rs
(mS)
8
(pF)
BF512
BF511
1
6
4
2
0
BF510
0.5
typ
0
0
4
8
12
16
V
20
(V)
0
5
10
15
I
(mA)
D
DS
Fig.2 VGS = 0 for BF510 and BF511;
ID = 5 mA for BF512 and BF513;
f = 1 MHz; Tamb = 25 C.
Fig.3 VDS = 10 V; f = 1 kHz; Tamb = 25 C; typical
values.
December 1997
4
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors
BF510 to 513
MDA245
300
handbook, halfpage
P
tot
(mW)
200
100
0
0
40
80
120
160
T
200
(°C)
amb
Fig.4 Power derating curve.
December 1997
5
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors
BF510 to 513
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-11-04
06-03-16
SOT23
TO-236AB
December 1997
6
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors
BF510 to 513
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DEFINITIONS
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information supplied prior to the publication hereof.
Product specification The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
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agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
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DISCLAIMERS
Limited warranty and liability Information in this
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However, NXP Semiconductors does not give any
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Applications Applications that are described herein for
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warranty that such applications will be suitable for the
specified use without further testing or modification.
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accordance with the Terms and conditions of commercial
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Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
December 1997
7
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors
BF510 to 513
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
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Quick reference data The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products Unless this data
sheet expressly states that this specific NXP
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no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
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product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
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Semiconductors’ product specifications.
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implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
December 1997
8
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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
R77/02/pp9
Date of release: December 1997
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