BF556B [NXP]
N-channel silicon junction field-effect transistors; N-沟道硅结型场效应晶体管
| 型号： | BF556B |
| 厂家： | 
NXP |
| 描述： | N-channel silicon junction field-effect transistors |
| 文件： | 总11页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BF556A; BF556B; BF556C
N-channel silicon junction
field-effect transistors
Product specification
1996 Jul 29
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
Philips Semiconductors
Productspecification
N-channel silicon junction
field-effect transistors
BF556A; BF556B; BF556C
FEATURES
• Low leakage level (typ. 500 fA)
• High gain
handbook, age
2
1
• Low cut-off voltage.
d
g
s
APPLICATIONS
• Impedance converters in e.g. electret microphones and
3
infra-red detectors
Top view
MAM036
•
VHF amplifiers in oscillators and mixers.
Marking codes:
BF556A: M84.
BF556B: M85.
BF556C: M86.
DESCRIPTION
N-channel symmetrical silicon junction field-effect
transistors in a SOT23 package.
Fig.1 Simplified outline and symbol.
PINNING - SOT23
PIN
1
SYMBOL
DESCRIPTION
source
CAUTION
s
d
g
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
2
drain
gate‘
3
QUICK REFERENCE DATA
SYMBOL
VDS
PARAMETER
CONDITIONS
MIN.
MAX.
±30
UNIT
drain-source voltage (DC)
gate-source cut-off voltage
drain current
−
V
VGSoff
IDSS
ID = 200 µA; VDS = 15 V
−0.5
−7.5
V
VGS = 0; VDS = 15 V
BF556A
3
7
mA
mA
mA
mW
mS
BF556B
6
13
18
250
−
BF556C
11
−
Ptot
yfs
total power dissipation
forward transfer admittance
up to Tamb = 25 °C
VGS = 0; VDS = 15 V
4.5
1996 Jul 29
2
Philips Semiconductors
Productspecification
N-channel silicon junction
field-effect transistors
BF556A; BF556B; BF556C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
PARAMETER
drain-source voltage (DC)
gate-source voltage
CONDITIONS
MIN.
MAX.
±30
UNIT
−
−
−
−
−
V
V
V
VGSO
VGDO
IG
open drain
−30
−30
10
gate-drain voltage (DC)
forward gate current (DC)
total power dissipation
storage temperature
open source
mA
mW
°C
Ptot
Tstg
Tj
up to Tamb = 25 °C; note 1
250
150
150
−65
operating junction temperature
−
°C
Note
1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm2.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient; note 1
500
K/W
Note
1. Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm2.
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
V(BR)GSS
VGSoff
PARAMETER
CONDITIONS
MIN.
−30
TYP.
MAX.
UNIT
gate-source breakdown voltage IG = −1 µA; VDS = 0
−
−
V
V
gate-source cut-off voltage
drain current
ID = 200 µA; VDS = 15 V −0.5
−7.5
IDSS
VGS = 0; VDS = 15 V
BF556A
3
−
−
−
7
mA
mA
mA
pA
BF556B
6
13
BF556C
11
18
IGSS
yfs
gate leakage current
forward transfer admittance
VGS = −20 V; VDS = 0
VGS = 0; VDS = 15 V
VGS = 0; VDS = 15 V
−
−0.5
−
−5000
4.5
−
−
−
mS
µS
yos
common source output
admittance
40
1996 Jul 29
3
Philips Semiconductors
Productspecification
N-channel silicon junction
field-effect transistors
BF556A; BF556B; BF556C
DYNAMIC CHARACTERISTICS
T
amb = 25 °C; unless otherwise specified.
SYMBOL PARAMETER
input capacitance
CONDITIONS
TYP.
1.7
UNIT
pF
Cis
Crs
gis
VDS = 15 V; VGS = −10 V; f = 1 MHz
VDS = 15 V; VGS = 0; f = 1 MHz
3
pF
reverse transfer capacitance
VDS = 15 V; VGS = −10 V; f = 1 MHz
VDS = 15 V; VGS = 0; f = 1 MHz
0.8
0.9
15
300
2
pF
pF
common source input conductance
common source transfer conductance
common source reverse conductance
common source output conductance
equivalent input noise voltage
VDS = 10 V; ID = 1 mA; f = 100 MHz
VDS = 10 V; ID = 1 mA; f = 450 MHz
VDS = 10 V; ID = 1 mA; f = 100 MHz
VDS = 10 V; ID = 1 mA; f = 450 MHz
VDS = 10 V; ID = 1 mA; f = 100 MHz
VDS = 10 V; ID = 1 mA; f = 450 MHz
VDS = 10 V; ID = 1 mA; f = 100 MHz
VDS = 10 V; ID = 1 mA; f = 450 MHz
VDS = 10 V; ID = 1 mA; f = 100 Hz
µS
µS
gfs
grs
gos
Vn
mS
mS
µS
1.8
−6
−40
30
60
40
µS
µS
µS
nV/√Hz
MRC156
MRC154
10
20
handbook, halfpage
handbook, halfpage
I
Y
DSS
fs
(mS)
(mA)
8
16
6
4
2
0
12
8
4
0
0
0
1
2
3
4
5
6
7
(V)
1
2
3
4
5
6
7
V
GSoff
V
(V)
GSoff
VDS = 15 V; ID = 1 µA.
VDS = 15 V.
Fig.3 Forward transfer admittance as a function
of gate-source cut-off voltage; typical
values.
Fig.2 Drain current as a function of gate-source
cut-off voltage; typical values.
1996 Jul 29
4
Philips Semiconductors
Productspecification
N-channel silicon junction
field-effect transistors
BF556A; BF556B; BF556C
MRC153
MRC155
100
300
handbook, halfpage
handbook, halfpage
G
os
(µS)
R
DSon
(Ω)
80
200
60
40
20
0
100
0
0
0
−2
−4
−6
V
−8
(V)
2
4
6
8
GSoff
V
(V)
GSoff
VDS = 100 mV; VGS = 0.
VDS = 15 V.
Fig.4 Common-source output conductance as a
function of gate-source cut-off voltage;
typical values.
Fig.5 Drain-source on-state resistance as a
function of gate-source cut-off voltage;
typical values.
MRC145
MRC146
5
16
handbook, halfpage
V
= 0 V
handbook, halfpage
I
GS
D
(mA)
I
D
(mA)
V
= 0 V
GS
4
3
2
1
0
12
−0.5 V
−1.0 V
−0.5 V
−1 V
8
4
0
−1.5 V
−2.0 V
−2.5 V
0
4
8
12
16
0
4
8
12
16
V
(V)
DS
V
(V)
DS
Fig.6 Typical output characteristics; BF556A.
Fig.7 Typical output characteristics; BF556B.
1996 Jul 29
5
Philips Semiconductors
Productspecification
N-channel silicon junction
field-effect transistors
BF556A; BF556B; BF556C
MRC147
MRC148
25
30
handbook, halfpage
handbook, halfpage
I
D
(mA)
I
D
V
= 0 V
GS
(mA)
20
BF556C
BF556B
20
−1 V
15
10
5
−2 V
−3 V
10
BF556A
−4 V
−5 V
0
0
−6
0
4
8
12
16
−4
−2
0
V
(V)
V
(V)
GS
DS
VDS = 15 V.
Fig.8 Typical output characteristics; BF556C.
Fig.9 Typical input characteristics.
MRC149
MRC151
3
2
10
−10
handbook, halfpage
I
handbook, halfpage
D
I
(µA)
G
I
= 10 mA
D
2
(pA)
10
−10
1 mA
BF556C BF556B
BF556A
10
1
−1
I
GSS
−1
10
−1
−10
0.1 mA
−2
10
−3
−2
10
−10
−8
−6
−4
−2
0
0
4
8
12
16
V
20
(V)
V
(V)
GS
DG
VDS = 15 V.
ID = 10 mA only for BF556B and BF556C.
Fig.10 Drain current as a function of gate-source
voltage; typical values.
Fig.11 Gate current as a function of drain-gate
voltage; typical values.
1996 Jul 29
6
Philips Semiconductors
Productspecification
N-channel silicon junction
field-effect transistors
BF556A; BF556B; BF556C
MRC150
MRC166
3
10
300
handbook, halfpage
I
GSS
P
tot
(mW)
(pA)
2
10
200
10
1
100
−1
10
0
−50
0
50
100
150
0
50
100
150
o
T
( C)
amb
T (°C)
j
VDS = 0; VGS = −20 V.
Fig.12 Gate current as a function of junction
temperature; typical values.
Fig.13 Power derating curve.
MRC134
MRC140
1
3
handbook, halfpage
handbook, halfpage
C
rs
(pF)
C
is
0.8
(pF)
2
0.6
0.4
0.2
0
1
0
–10
–8
–6
–4
–2
0
–10
–8
–6
–4
–2
0
V
(V)
V
(V)
GS
GS
VDS = 15 V.
VDS = 15 V.
Fig.14 Reverse transfer capacitance; typical values.
1996 Jul 29
Fig.15 Input capacitance; typical values.
7
Philips Semiconductors
Productspecification
N-channel silicon junction
field-effect transistors
BF556A; BF556B; BF556C
MRC142
MRC141
2
10
10
handbook, halfpage
handbook, halfpage
g
, b
is is
(mS)
g
, −b
fs
fs
(mS)
10
g
fs
b
is
1
1
−b
fs
g
is
−1
10
−2
−1
10
10
2
3
2
3
10
10
10
10
10
10
f (MHz)
f (MHz)
VDS = 10 V; ID = 1 mA; Tamb = 25 °C.
VDS = 10 V; ID = 1 mA; Tamb = 25 °C.
Fig.16 Common-source input admittance; typical
values.
Fig.17 Common-source transfer admittance;
typical values.
MRC144
MRC143
−10
10
handbook, halfpage
handbook, halfpage
b
, g
rs rs
b
, g
os os
(mS)
(mS)
b
rs
−1
b
os
1
−1
−2
−3
−10
−10
−10
−1
g
10
10
rs
g
os
−2
2
3
2
3
10
10
10
10
10
10
f (MHz)
f (MHz)
VDS = 10 V; ID = 1 mA; Tamb = 25 °C.
VDS = 10 V; ID = 1 mA; Tamb = 25 °C.
Fig.18 Common-source reverse admittance;
typical values.
Fig.19 Common-source output admittance;
typical values.
1996 Jul 29
8
Philips Semiconductors
Productspecification
N-channel silicon junction
field-effect transistors
BF556A; BF556B; BF556C
MRC278
3
10
handbook, halfpage
V
n
(V)
2
10
10
1
10
2
3
4
5
10
10
10
10
f (Hz)
VDS = 10 V; ID = 1 mA.
Fig.20 Equivalent noise voltage as a function of
frequency.
1996 Jul 29
9
Philips Semiconductors
Productspecification
N-channel silicon junction
field-effect transistors
BF556A; BF556B; BF556C
PACKAGE OUTLINE
3.0
2.8
B
1.9
0.150
0.090
A
M
0.2
0.55
0.45
0.95
A
2
1
0.1
max
o
10
max
2.5
max
1.4
1.2
o
10
max
3
1.1
max
0.48
0.38
0.1 M A B
o
MBC846
30
max
TOP VIEW
Dimensions in mm.
Fig.21 SOT23.
1996 Jul 29
10
Philips Semiconductors
Productspecification
N-channel silicon junction
field-effect transistors
BF556A; BF556B; BF556C
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jul 29
11
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