BF583 [NXP]
NPN high-voltage transistors; NPN型高压晶体管
| 型号： | BF583 |
| 厂家： | 
NXP |
| 描述： | NPN high-voltage transistors |
| 文件： | 总8页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BF583; BF585; BF587
NPN high-voltage transistors
1996 Dec 09
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF583; BF585; BF587
FEATURES
• Low feedback capacitance.
handbook, halfpage
APPLICATIONS
• For use in video output stages of black and white and
colour television receivers.
2
DESCRIPTION
3
NPN transistors in a TO-202 plastic package.
1
PINNING
PIN
1
DESCRIPTION
1
2
3
MBH793
emitter
collector
base
2
Fig.1 Simplified outline (TO-202) and symbol.
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
BF583
open emitter
open base
−
−
−
300
V
V
V
BF585
350
400
BF587
VCEO
collector-emitter voltage
BF583
−
−
−
−
−
−
−
250
300
350
100
1.6
50
V
V
V
BF585
BF587
ICM
Ptot
hFE
Cre
fT
peak collector current
total power dissipation
DC current gain
feedback capacitance
transition frequency
mA
W
in free air; Tamb ≤ 25 °C
IC = 25 mA; VCE = 20 V
IC = ic = 0; VCE = 30 V; f = 1 MHz
IC = 10 mA; VCE = 10 V
1.8
110
pF
70
MHz
1996 Dec 09
2
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF583; BF585; BF587
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
collector-base voltage
BF583
−
−
−
300
V
V
V
BF585
350
400
BF587
VCEO
collector-emitter voltage
BF583
open base
−
−
−
−
250
300
350
5
V
V
V
V
BF585
BF587
VEBO
IC
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
open collector
50
−
−
mA
mA
mA
W
ICM
IBM
Ptot
100
50
−
in free air; Tamb ≤ 25 °C
in free air; Tmb ≤ 25 °C
−
1.6
5
−
W
Tstg
Tj
storage temperature
−65
−
+150
150
+150
°C
°C
°C
junction temperature
Tamb
operating ambient temperature
−65
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
K/W
K/W
Rth j-a
thermal resistance from junction to ambient
78
25
Rth j-mb
thermal resistance from junction to mounting base
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IE = 0; VCB = 300 V
MIN.
MAX.
UNIT
ICBO
collector cut-off current
−
−
−
20
nA
µA
nA
IE = 0; VCB = 250 V; Tj = 150 °C
IC = 0; VEB = 5 V
20
IEBO
hFE
emitter cut-off current
DC current gain
100
−
IC = 25 mA; VCE = 20 V
IC = 40 mA; VCE = 20 V
50
20
−
−
VCEsat
Cc
collector-emitter saturation voltage IC = 30 mA; IB = 5 mA
600
2.5
1.8
110
mV
pF
collector capacitance
feedback capacitance
transition frequency
IE = ie = 0; VCB = 30 V; f = 1 MHz
−
Cre
fT
IC = ic = 0; VCE = 30 V; f = 1 MHz
IC = 10 mA; VCE = 10 V
−
pF
70
MHz
1996 Dec 09
3
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF583; BF585; BF587
PACKAGE OUTLINE
10.4 max
0.56 max
3.8
3.6
3.8
24.2
max
8.6
max
(1)
2.4 max
2.5 max
12.2
min
1
2
3
0.8
0.6
(3x)
0.65 max
2.54 2.54
1.6
4.6
max
MGA322
10
Dimensions in mm.
(1) Terminal dimensions within this zone are uncontrolled.
Fig.2 TO-202.
1996 Dec 09
4
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF583; BF585; BF587
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Dec 09
5
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF583; BF585; BF587
NOTES
1996 Dec 09
6
Philips Semiconductors
Product specification
NPN high-voltage transistors
BF583; BF585; BF587
NOTES
1996 Dec 09
7
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© Philips Electronics N.V. 1996
SCA52
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Printed in The Netherlands
117041/00/02/pp8
Date of release: 1996 Dec 09
Document order number: 9397 750 01571
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