BF901T/R [NXP]
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC PACKAGE-4, FET RF Small Signal;
| 型号： | BF901T/R |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, MICRO MINIATURE, PLASTIC PACKAGE-4, FET RF Small Signal |
| 文件： | 总7页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BF901; BF901R
Silicon n-channel dual gate
MOS-FETs
November 1992
Product specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
BF901; BF901R
FEATURES
QUICK REFERENCE DATA
• Intended for low voltage operation
SYMBOL
VDS
PARAMETER
TYP.
MAX.
12
UNIT
• Short channel transistor with high
ratio Yfs :Cis
drain-source voltage
drain current
−
−
−
−
V
ID
30
mA
mW
°C
• Low noise gain-controlled amplifier
to 1 GHz
Ptot
Tj
total power dissipation
junction temperature
transfer admittance
input capacitance at gate 1
feedback capacitance
noise figure at 800 MHz
200
150
35
• BF901R has reverse pinning.
Yfs
28
mS
pF
Cig1-s
Crs
F
2.35
25
2.75
−
DESCRIPTION
fF
Enhancement type field-effect
transistors in plastic microminiature
SOT143 and SOT143R envelopes,
with source and substrate
1.7
−
dB
interconnected. They are intended for
UHF and VHF applications, such as
television tuners and professional
communications equipment
especially suited for low voltage
operation. These MOS-FET tetrodes
are protected against excessive input
voltage surges by integrated
handbook, halfpage
d
4
3
2
g
2
g
1
back-to-back diodes between gates
and source.
1
s,b
Top view
MAM039
PINNING
Marking code: MO1.
PIN
DESCRIPTION
source
Fig.1 Simplified outline (SOT143) and symbol.
1
2
3
4
drain
gate 2
gate 1
d
handbook, age
3
4
g
2
g
1
2
1
s,b
MAM040
Top view
Marking code: MO2.
Fig.2 Simplified outline (SOT143R) and symbol.
November 1992
2
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
BF901; BF901R
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VDS
VD-G2
ID
PARAMETER
drain-source voltage
CONDITIONS
MIN. MAX. UNIT
−
−
−
−
−
12
6
V
drain-gate 2 voltage
DC drain current
gate 1-source current
gate 2-source current
total power dissipation
BF901
V
30
10
10
mA
mA
mA
±IG1-S
±IG2-S
Ptot
up to Tamb = 50 °C (note 1)
up to Tamb = 40 °C (note 1)
−
−
200
200
mW
mW
°C
BF901R
Tstg
Tj
storage temperature
junction temperature
−65 150
150
−
°C
THERMAL RESISTANCE
SYMBOL
PARAMETER
THERMAL RESISTANCE
Rth j-a
thermal resistance from junction to ambient (note 1)
BF901
500 K/W
550 K/W
BF901R
Note
1. Device mounted on an FR4 printboard.
MBB756
240
handbook, halfpage
P
tot
(mW)
BF901R
BF901
120
0
0
50
100
150
T
200
(°C)
amb
Fig.3 Power derating curve.
November 1992
3
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
BF901; BF901R
STATIC CHARACTERISTICS
Tj = 25 °C.
SYMBOL
±IG1-SS
PARAMETER
gate 1 cut-off current
CONDITIONS
MIN. MAX. UNIT
±VG1-S = 5 V; VG2-S = VDS = 0
±VG2-S = 5 V; VG1-S = VDS = 0
±IG1-SS = 10 mA; VG2-S = VDS = 0
±IG2-SS = 10 mA; VG1-S = VDS = 0
ID = 20 µA; VDS = 8 V; VG2-S = 4 V
ID = 20 µA; VDS = 8 V; VG1-S = 0
VDS = 4 V; VG1-S = 1.1 V; VG2-S = 3.4 V
−
50
50
20
20
0.7
1
nA
nA
V
±IG2-SS
gate 2 cut-off current
−
±V(BR)G1-SS
±V(BR)G2-SS
VG1-S(th)
VG2-S(th)
IDSX
gate 1-source breakdown voltage
gate 2-source breakdown voltage
gate 1-source threshold voltage
gate 2-source threshold voltage
drain-source current
6
6
V
0
V
0.3
2
V
18
mA
DYNAMIC CHARACTERISTICS
Measuring conditions (common source): ID = 14 mA; VDS = 5 V; VG2-S = 4 V; Tamb = 25 °C.
SYMBOL
PARAMETER
CONDITIONS
pulsed; Tj = 25 °C
MIN. TYP. MAX. UNIT
Yfs
transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
25
−
28
35
mS
Cig1-s
f = 1 MHz
2.35 2.75 pF
Cig2-s
Cos
Crs
F
f = 1 MHz
−
1.2
1.4
25
−
−
−
−
−
pF
pF
fF
f = 1 MHz
−
feedback capacitance
noise figure
f = 1 MHz
−
f = 200 MHz; Gs = 2 mS; Bs = Bsopt.
f = 800 MHz; Gs = 3.3 mS; Bs = Bsopt.
−
0.7
1.7
dB
dB
−
November 1992
4
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
BF901; BF901R
PACKAGE OUTLINE
Plastic surface mounted package; reverse pinning; 4 leads
SOT143R
D
B
E
A
X
y
H
v
M
A
E
e
b
w
M
B
p
3
4
Q
A
A
1
c
2
1
L
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1
0.9
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.55
0.25
0.45
0.25
0.1
mm
1.9
1.7
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-03-10
SOT143R
November 1992
5
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
BF901; BF901R
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
H
v
M
A
E
e
b
w
M
B
p
4
3
Q
A
A
1
c
1
2
L
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1
0.9
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
0.1
mm
1.9
1.7
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT143B
November 1992
6
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
BF901; BF901R
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Short-form specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
November 1992
7
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