BF904AWR,115 [NXP]
N-channel dual-gate MOSFET;
| 型号： | BF904AWR,115 |
| 厂家： | 
NXP |
| 描述： | N-channel dual-gate MOSFET 放大器 光电二极管 晶体管 |
| 文件： | 总16页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BF904A; BF904AR; BF904AWR
N-channel dual gate MOS-FETs
1999 May 14
Product specification
Supersedes data of 1999 Feb 01
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904A; BF904AR; BF904AWR
FEATURES
PINNING
PIN
• Specially designed for use at 5 V
supply voltage
DESCRIPTION
source
4
3
1
2
3
4
• Short channel transistor with high
transfer admittance to input
capacitance ratio
drain
gate 2
gate 1
1
2
• Low noise gain controlled amplifier
up to 1 GHz
Top view
MSB014
• Superior cross-modulation
performance during AGC.
BF904A marking code: M41.
Fig.1 Simplified outline
(SOT143B).
APPLICATIONS
•
VHF and UHF applications with
3 to 7 V supply voltage such as
television tuners and professional
communications equipment.
3
4
3
4
halfpage
DESCRIPTION
2
1
Enhancement type field-effect
transistors. The transistors consist of
an amplifier MOS-FET with source
and substrate interconnected and an
internal bias circuit to ensure good
cross-modulationperformanceduring
AGC.
2
1
Top view
MSB842
Top view
MSB035
BF904AR marking code: M42.
BF904AWR marking code: MH.
Fig.2 Simplified outline
(SOT143R).
Fig.3 Simplified outline
(SOT343R).
The BF904A, BF904AR and
BF904AWR are encapsulated in the
SOT143B, SOT143R and SOT343R
plastic packages respectively.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
drain-source voltage
CONDITIONS
MIN.
TYP. MAX. UNIT
VDS
ID
−
−
7
V
drain current
−
−
30
200
30
2.6
35
−
mA
mW
mS
pF
fF
Ptot
yfs
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
Ts ≤ 110 °C
−
−
22
−
25
2.2
25
2
Cig1-ss
Crss
F
f = 1 MHz
−
f = 800 MHz
−
dB
°C
Tj
operating junction temperature
−
−
150
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1999 May 14
2
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904A; BF904AR; BF904AWR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
UNIT
−
−
−
−
−
7
V
ID
drain current
30
mA
mA
mA
mW
°C
IG1
IG2
Ptot
Tstg
Tj
gate 1 current
±10
±10
200
+150
150
gate 2 current
total power dissipation
storage temperature
operating junction temperature
Ts ≤ 110 °C; note 1; see Fig.4
−65
−
°C
Note
1. Ts is the temperature of the soldering point of the source lead.
MGL615
250
handbook, halfpage
P
tot
(mW)
200
150
100
50
0
0
50
100
150
200
T
(°C)
s
Fig.4 Power derating curve.
1999 May 14
3
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904A; BF904AR; BF904AWR
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
200
K/W
Note
1. Soldering point of the source lead.
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
15
UNIT
V(BR)G1-SS
V(BR)G2-SS
V(F)S-G1
V(F)S-G2
VG1-S(th)
VG2-S(th)
IDSX
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
gate 2-source threshold voltage
drain-source current
VG2-S = VDS = 0; IG1-S = 10 mA
VG1-S = VDS = 0; IG2-S = 10 mA
VG2-S = VDS = 0; IS-G1 = 10 mA
VG1-S = VDS = 0; IS-G2 = 10 mA
VG2-S = 4 V; VDS = 5 V; ID = 20 µA
VG1-S = VDS = 5 V; ID = 20 µA
6
V
6
15
1.5
1.5
1
V
0.5
0.5
0.3
0.3
8
V
V
V
1.2
13
V
VG2-S = 4 V; VDS = 5 V;
mA
RG1 = 120 kΩ; note 1
IG1-SS
IG2-SS
gate 1 cut-off current
gate 2 cut-off current
VG2-S = VDS = 0; VG1-S = 5 V
VG1-S = VDS = 0; VG2-S = 5 V
−
−
50
50
nA
nA
Note
1. RG1 connects gate 1 to VGG = 5 V; see Fig.21.
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VDS = 5 V; VG2-S = 4 V; ID = 10 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
22
TYP.
25
MAX.
UNIT
yfs
Cig1-s
Cig2-s
Cos
Crs
forward transfer admittance pulsed; Tj = 25 °C
30
2.6
2
mS
pF
pF
pF
fF
input capacitance at gate 1
input capacitance at gate 2
drain-source capacitance
f = 1 MHz
f = 1 MHz
f = 1 MHz
−
1
1
−
−
−
2.2
1.5
1.4
25
1
1.7
35
1.5
2.8
reverse transfer capacitance f = 1 MHz
noise figure f = 200 MHz; GS = 2 mS; BS = BSopt
f = 800 MHz; GS = GSopt; BS = BSopt
F
dB
dB
2
1999 May 14
4
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904A; BF904AR; BF904AWR
MLD268
MRA769
40
0
handbook, halfpage
gain
Y
reduction
fs
(dB)
(mS)
30
10
20
30
40
50
20
10
0
50
0
50
100
150
( C)
0
1
2
3
4
o
T
V
(V)
j
AGC
f = 50 MHz.
Fig.5 Transfer admittance as a function of the
junction temperature; typical values.
Fig.6 Typical gain reduction as a function of
the AGC voltage; see Fig.21.
MRA771
MLD270
120
20
handbook, halfpage
V
V
= 4 V
S
3 V 2.5 V
2 V
unw
(dB µV)
110
G2
I
D
(mA)
15
100
90
10
5
1.5 V
1 V
80
0
0
10
20
30
40
50
0
0.4
0.8
1.2
1.6
V
2.0
(V)
gain reduction (dB)
G1
S
VDS = 5 V; VGG = 5 V; fw = 50 MHz.
funw = 60 MHz; Tamb = 25 °C; RG1 = 120 kΩ.
VDS = 5 V.
Fig.7 Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.21.
Tj = 25 °C.
Fig.8 Transfer characteristics; typical values.
1999 May 14
5
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904A; BF904AR; BF904AWR
MLD269
MLD271
20
150
handbook, halfpage
handbook, halfpage
V
= 1.4 V
S
V
= 4 V
G2 S
I
G1
D
I
3.5 V
(mA)
G1
16
(µA)
1.3 V
3 V
100
1.2 V
1.1 V
12
8
2.5 V
2 V
1.0 V
0.9 V
50
4
0
0
0
0
2
4
6
8
10
(V)
0.5
1.0
1.5
2.0
2.5
(V)
V
V
G1
DS
S
VDS = 5 V.
VG2-S = 4 V.
Tj = 25 °C.
Tj = 25 °C.
Fig.10 Gate 1 current as a function of gate 1
voltage; typical values.
Fig.9 Output characteristics; typical values.
MLD272
MLD273
16
40
handbook, halfpage
handbook, halfpage
I
y
D
fs
(mS)
(mA)
V
= 4 V
S
G2
12
30
3.5 V
3 V
8
4
0
20
2.5 V
10
0
2 V
0
10
20
30
40
50
(µA)
0
4
8
12
16
20
(mA)
I
I
G1
D
VDS = 5 V.
VG2-S = 4 V.
Tj = 25 °C.
VDS = 5 V.
Tj = 25 °C.
Fig.11 Forward transfer admittance as a
function of drain current; typical values.
Fig.12 Drain current as a function of gate 1 current;
typical values.
1999 May 14
6
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904A; BF904AR; BF904AWR
MLD274
MLD275
20
12
handbook, halfpage
handbook, halfpage
R
= 47 kΩ 68 kΩ
G1
I
D
I
D
82 kΩ
(mA)
(mA)
15
100 kΩ
120 kΩ
150 kΩ
8
10
5
180 kΩ
220 kΩ
4
0
0
0
2
4
6
8
0
1
2
3
4
5
V
(V)
V
= V
(V)
DS
GG
GG
VG2-S = 4 V; Tj = 25 °C.
G1 connected to VGG; see Fig.21.
VDS = 5 V; VG2-S = 4 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG); see Fig.21.
R
Fig.14 Drain current as a function of gate 1
(= VGG) and drain supply voltage;
typical values.
Fig.13 Drain current as a function of gate 1 supply
voltage (= VGG); typical values.
MLD276
MLB945
12
40
handbook, halfpage
handbook, halfpage
V
= 5 V
4.5 V
GG
I
G1
(µA)
I
D
V
= 5 V
GG
4 V
(mA)
30
3.5 V
3 V
4.5 V
8
4 V
3.5 V
3 V
20
10
4
0
0
0
0
2
4
6
2
4
6
V
(V)
S
V
(V)
S
G2
G2
VDS = 5 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG); see Fig.21.
VDS = 5 V; Tj = 25 °C.
RG1 = 120 kΩ (connected to VGG); see Fig.21.
Fig.15 Drain current as a function of gate 2 voltage;
typical values.
Fig.16 Gate 1 current as a function of gate 2
voltage; typical values.
1999 May 14
7
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904A; BF904AR; BF904AWR
MLD277
MLD278
2
10
3
2
3
10
rs
10
handbook, halfpage
y
y
ϕ
is
(mS)
rs
(deg)
(µS)
ϕ
rs
2
10
10
10
y
rs
b
is
1
10
10
g
is
1
1
10
1
2
3
2
3
10
10
10
10
10
10
f (MHz)
f (MHz)
VDS = 5 V; VG2 = 4 V.
VDS = 5 V; VG2 = 4 V.
ID = 10 mA; Tamb = 25 °C.
ID = 10 mA; Tamb = 25 °C.
Fig.17 Input admittance as a function of frequency;
typical values.
Fig.18 Reverse transfer admittance and phase as
a function of frequency; typical values.
MGL614
MLD279
2
2
10
10
fs
10
handbook, halfpage
y
os
(mS)
ϕ
y
fs
y
fs
fs
b
g
(deg)
(mS)
os
1
ϕ
10
10
os
−1
10
10
−2
1
1
2
3
2
3
10
10
10
10
10
10
f (MHz)
f (MHz)
VDS = 5 V; VG2 = 4 V.
VDS = 5 V; VG2 = 4 V.
ID = 10 mA; Tamb = 25 °C.
ID = 10 mA; Tamb = 25 °C.
Fig.19 Forward transfer admittance and phase as
a function of frequency; typical values.
Fig.20 Output admittance as a function of
frequency; typical values.
1999 May 14
8
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904A; BF904AR; BF904AWR
V
AGC
R1
10 kΩ
C1
4.7 nF
C3 12 pF
R
L
L1
C2
DUT
50 Ω
≈
450 nH
C4
4.7 nF
R
R2
GEN
R
G1
50 Ω
50Ω
4.7 nF
V
I
V
MLD171
GG
V
DS
Fig.21 Cross-modulation test set-up.
1999 May 14
9
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904A; BF904AR; BF904AWR
Table 1 Scattering parameters: VDS = 5 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 °C
S11
S21
S12
S22
f
MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(MHz)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
40
100
0.989
0.987
0.976
0.972
0.947
0.925
0.905
0.883
0.861
0.841
0.822
0.787
0.752
0.723
0.685
0.665
0.659
0.670
0.700
0.729
0.726
−3.2
−7.9
2.52
2.52
2.47
2.43
2.36
2.26
2.19
2.10
2.01
1.93
1.85
1.71
1.59
1.47
1.36
1.31
1.30
1.26
1.10
0.82
0.52
175.9
169.4
159.2
150.5
139.6
130.3
121.1
112.3
103.6
95.5
0.001
0.001
0.003
0.004
0.005
0.005
0.005
0.006
0.006
0.006
0.006
0.007
0.011
0.019
0.021
0.026
0.035
0.050
0.076
0.106
0.128
87.9
86.1
0.989
0.988
0.984
0.985
0.975
0.968
0.961
0.954
0.946
0.934
0.931
0.923
0.926
0.935
0.931
0.930
0.944
0.941
0.849
0.642
0.480
−1.7
−4.3
200
−15.7
−23.3
−30.6
−37.6
−44.4
−50.9
−57.0
−63.0
−68.4
−78.9
−88.1
−97.3
−106.3
−114.0
−119.8
−124.2
−129.3
−138.7
−150.1
81.4
−8.6
300
80.5
−12.7
−16.9
−20.8
−24.7
−28.4
−32.0
−35.6
−39.3
−46.7
−54.2
−62.2
−69.3
−77.7
−89.1
−103.5
−119.7
−130.9
−130.6
400
76.9
500
75.6
600
75.5
700
78.0
800
85.3
900
90.7
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
87.8
102.6
127.1
143.7
150.0
149.4
151.5
158.2
163.4
162.2
150.5
137.4
72.3
57.3
40.1
25.0
7.7
−14.0
−42.2
−78.2
−120.8
−162.8
Table 2 Noise data: VDS = 5 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 °C
Γopt
f
Fmin
(dB)
Rn
(Ω)
(MHz)
(ratio)
(deg)
49.6
800
2.0
0.686
50.4
1999 May 14
10
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904A; BF904AR; BF904AWR
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
H
v
M
A
E
e
b
p
w
M
B
4
3
Q
A
A
1
c
1
2
L
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1
0.9
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
0.1
mm
1.9
1.7
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT143B
1999 May 14
11
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904A; BF904AR; BF904AWR
Plastic surface mounted package; reverse pinning; 4 leads
SOT143R
D
B
E
A
X
y
H
v
M
A
E
e
b
w
M
B
p
3
4
Q
A
A
1
c
2
1
L
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1
0.9
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.55
0.25
0.45
0.25
0.1
mm
1.9
1.7
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-03-10
SOT143R
1999 May 14
12
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904A; BF904AR; BF904AWR
Plastic surface mounted package; reverse pinning; 4 leads
SOT343R
D
B
E
A
X
H
v
M
A
y
E
e
3
4
Q
A
A
1
c
2
1
L
p
w
M
B
b
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
b
c
D
E
e
e
H
E
L
Q
v
w
y
p
p
1
1
0.4
0.3
1.1
0.8
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.15
0.2
0.2
0.1
1.3
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT343R
97-05-21
1999 May 14
13
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904A; BF904AR; BF904AWR
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 14
14
Philips Semiconductors
Product specification
N-channel dual gate MOS-FETs
BF904A; BF904AR; BF904AWR
NOTES
1999 May 14
15
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106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Colombia: see South America
Czech Republic: see Austria
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Hungary: see Austria
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 02 67 52 2531, Fax. +39 02 67 52 2557
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay: see South America
Vietnam: see Singapore
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Middle East: see Italy
Tel. +381 11 62 5344, Fax.+381 11 63 5777
For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1999
SCA64
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125004/00/03/pp16
Date of release: 1999 May 14
Document order number: 9397 750 05271
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