BF908R,215 [NXP]
BF908R - N-channel dual-gate MOSFET SOT-143 4-Pin;
| 型号： | BF908R,215 |
| 厂家： | 
NXP |
| 描述： | BF908R - N-channel dual-gate MOSFET SOT-143 4-Pin |
| 文件： | 总9页 (文件大小：261K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF908; BF908R
Dual-gate MOS-FETs
Rev. 03 — 14 November 2007
Product data sheet
IMPORTANT NOTICE
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NXP Semiconductors
NXP Semiconductors
Product specification
Dual-gate MOS-FETs
BF908; BF908R
FEATURES
• High forward transfer admittance
handbook, halfpage
d
4
3
2
• Short channel transistor with high forward transfer
admittance to input capacitance ratio
g
2
• Low noise gain controlled amplifier up to 1 GHz.
g
1
APPLICATIONS
• VHF and UHF applications with 12 V supply voltage,
such as television tuners and professional
communications equipment.
1
s,b
Top view
BF908 marking code: %M1.
MAM039
DESCRIPTION
Fig.1 Simplified outline (SOT143) and
symbol; BF908.
Depletion type field-effect transistor in a plastic
microminiature SOT143 or SOT143R package. The
transistors are protected against excessive input voltage
surges by integrated back-to-back diodes between gates
and source.
d
handbook, age
3
4
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
g
2
g
1
PINNING
2
1
s,b
PIN
SYMBOL
DESCRIPTION
MAM040
Top view
BF908R marking code: %M2.
1
2
3
4
s, b
d
source
drain
Fig.2 Simplified outline (SOT143R) and
symbol; BF908R.
g2
g1
gate 2
gate 1
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
12
UNIT
VDS
ID
drain-source voltage
drain current
−
−
−
−
−
−
−
−
V
40
mA
mW
°C
Ptot
Tj
total power dissipation
200
150
50
operating junction temperature
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
yfs
36
2.4
20
−
43
mS
pF
Cig1-s
Crs
F
3.1
30
4
f = 1 MHz
45
pF
f = 800 MHz
1.5
2.5
dB
Rev. 03 - 14 November 2007
2 of 9
NXP Semiconductors
Product specification
Dual-gate MOS-FETs
BF908; BF908R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
PARAMETER
CONDITIONS
MIN.
MAX.
12
UNIT
drain-source voltage
drain current
−
−
−
−
V
ID
40
10
10
mA
mA
mA
±IG1
±IG2
Ptot
gate 1 current
gate 2 current
total power dissipation
BF908
see Fig.3; note 1
up to Tamb = 50 °C
up to Tamb = 40 °C
−
−
200
200
+150
150
mW
mW
°C
BF908R
Tstg
Tj
storage temperature
operating junction temperature
−65
−
°C
Note
1. Device mounted on a printed-circuit board.
MRC275
250
handbook, halfpage
P
tot
(mW)
200
150
100
50
BF908
BF908R
0
0
50
100
150
T
200
o
( C)
amb
Fig.3 Power derating curves.
Rev. 03 - 14 November 2007
3 of 9
NXP Semiconductors
Product specification
Dual-gate MOS-FETs
BF908; BF908R
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
BF908
500
550
K/W
K/W
BF908R
Note
1. Device mounted on a printed-circuit board.
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
±V(BR)G1-SS gate 1-source breakdown voltage VG2-S = VDS = 0; IG1-S = 10 mA
±V(BR)G2-SS gate 2-source breakdown voltage VG1-S = VDS = 0; IG2-S = 10 mA
8
−
20
20
2
V
8
−
−
3
−
−
−
V
−V(P)G1-S
−V(P)G2-S
IDSS
gate 1-source cut-off voltage
gate 2-source cut-off voltage
drain-source current
VG2-S = 4 V; VDS = 8 V; ID = 20 µA
VG1-S = 4 V; VDS = 8 V; ID = 20 µA
VG2-S = 4 V; VDS = 8 V; VG1-S = 0
VG2-S = VDS = 0; VG1-S = 5 V
−
V
−
1.5
27
50
50
V
15
−
mA
nA
nA
±IG1-SS
±IG2-SS
gate 1 cut-off current
gate 2 cut-off current
VG1-S = VDS = 0; VG2-S = 5 V
−
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VDS = 8 V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified.
SYMBOL
yfs
PARAMETER
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
CONDITIONS
pulsed; Tj = 25 °C; f = 1 MHz
f = 1 MHz
MIN.
36
TYP. MAX. UNIT
43
50
4
mS
pF
pF
pF
fF
Cig1-s
Cig2-s
Cos
2.4
1.2
1.2
20
−
3.1
1.8
1.7
30
f = 1 MHz
2.5
2.2
45
1.2
2.5
f = 1 MHz
Crs
reverse transfer capacitance
noise figure
f = 1 MHz
F
f = 200 MHz; GS = 2 mS; BS = BSopt
f = 800 MHz; GS = GSopt; BS = BSopt
0.6
1.5
dB
dB
−
Rev. 03 - 14 November 2007
4 of 9
NXP Semiconductors
Product specification
Dual-gate MOS-FETs
BF908; BF908R
MRC281
MRC282
40
30
handbook, halfpage
handbook, halfpage
V
= 4 V
V
= 0.3 V
G2-S
G1-S
I
D
(mA)
I
D
(mA)
3 V
2 V
30
0.2 V
0.1 V
0 V
20
1.5 V
1 V
20
10
0
0.5 V
0 V
10
−0.1 V
−0.2 V
−0.3 V
0
0
4
8
12
16
−0.6
−0.4
−0.2
0
0.2
0.4
0.6
V
(V)
V
(V)
DS
G1-S
VDS = 8 V; Tj = 25 °C.
VG2-S = 4 V; Tj = 25 °C.
Fig.4 Transfer characteristics; typical values.
Fig.5 Output characteristics; typical values.
MRC280
MRC276
50
60
4 V
Y
fs
3 V
2 V
Y
fs
(mS)
40
(mS)
1.5 V
40
30
20
10
0
1 V
20
0.5 V
V
= 0 V
G2-S
5
0
40
0
40
80
120
160
( C)
0
10
15
20
25
(mA)
o
T
I
j
D
VDS = 8 V; Tj = 25 °C.
VDS = 8 V; VG2-S = 4 V; ID = 15 mA.
Fig.6 Forward transfer admittance as a function
of drain current; typical values.
Fig.7 Forward transfer admittance as a function
of junction temperature; typical values.
Rev. 03 - 14 November 2007
5 of 9
NXP Semiconductors
Product specification
Dual-gate MOS-FETs
BF908; BF908R
Table 1 Scattering parameters
s11
s21
s12
s22
f
(MHz)
MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
V
DS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 °C.
50
100
200
300
400
500
600
700
800
900
0.998
0.994
0.979
0.962
0.939
0.914
0.892
0.865
0.837
0.811
0.785
−5.1
−10.4
−20.8
−30.3
−40.1
−49.1
−57.1
−64.4
−71.6
−78.1
−84.5
3.537
3.502
3.450
3.318
3.234
3.093
2.912
2.774
2.616
2.479
3.329
173.5
167.7
154.9
143.7
131.9
120.7
111.1
101.0
91.4
0.001
0.001
0.003
0.004
0.005
0.006
0.005
0.005
0.004
0.004
0.003
98.2
88.8
74.6
69.5
65.6
64.4
63.1
65.2
70.8
87.4
108.0
0.996
0.994
0.987
0.983
0.980
0.974
0.969
0.966
0.965
0.965
0.966
−2.4
−4.9
−9.5
−13.9
−18.5
−22.8
−27.0
−31.2
−35.4
−39.4
−43.7
81.9
1000
72.5
VDS = 8 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C.
50
100
200
300
400
500
600
700
800
900
1000
0.998
0.994
0.976
0.957
0.934
0.907
0.885
0.851
0.826
0.797
0.773
−5.3
−10.9
−21.6
−31.7
−41.7
−51.1
−59.1
−66.8
−73.9
−80.7
−87.0
3.983
3.943
3.878
3.722
3.614
3.446
3.240
3.072
2.891
2.733
2.569
173.4
167.5
154.7
143.3
131.6
120.4
110.9
100.9
91.3
0.001
0.001
0.003
0.004
0.005
0.006
0.005
0.005
0.004
0.004
0.004
95.5
93.6
74.3
70.0
63.5
62.2
59.6
64.8
67.8
85.0
102.9
0.994
0.991
0.984
0.979
0.975
0.969
0.964
0.961
0.959
0.958
0.958
−2.4
−5.0
−9.7
−14.2
−18.8
−23.2
−27.4
−31.6
−35.9
−40.0
−44.2
81.9
72.8
Table 2 Noise data
Γopt
f
Fmin
(dB)
rn
(MHz)
(ratio)
(deg)
VDS = 8 V; VG2-S = 4 V; ID = 10 mA; Tamb = 25 °C.
800 1.50
DS = 8 V; VG2-S = 4 V; ID = 15 mA; Tamb = 25 °C.
800 1.50
0.720
0.700
56.7
59.2
0.580
0.520
V
Rev. 03 - 14 November 2007
6 of 9
NXP Semiconductors
Product specification
Dual-gate MOS-FETs
BF908; BF908R
PACKAGE OUTLINES
3.0
2.8
B
0.150
0.090
1.9
A
B
M
0.2
0.75
0.60
A
4
3
0.1
max
o
10
2.5
max
1.4
1.2
max
o
10
max
1
2
1.1
max
o
0.1 M
A B
MBC845
30
max
0
0.1
0
0.1
0.88
0.48
1.7
TOP VIEW
Dimensions in mm.
Fig.8 SOT143.
3.0
2.8
B
0.150
0.090
1.9
A
M
0.2
0.40
0.25
A
3
4
0.1
max
o
10
2.5
max
1.4
1.2
max
o
10
max
2
1
1.1
max
0.48
0.38
0.88
0.78
o
MBC844
30
max
1.7
B
0.1 M
TOP VIEW
Dimensions in mm.
Fig.9 SOT143R.
Rev. 03 - 14 November 2007
7 of 9
BF908; BF908R
NXP Semiconductors
Dual-gate MOS-FETs
Legal information
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Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
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therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
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Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
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Characteristics sections of this document is not implied. Exposure to limiting
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Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
Rev. 03 - 14 November 2007
8 of 9
BF908; BF908R
NXP Semiconductors
Dual-gate MOS-FETs
Revision history
Revision history
Document ID
BF908-R_N_3
Modifications:
BF908-R_2
Release date
20071114
Data sheet status
Change notice
Supersedes
Product data sheet
-
BF908-R_2
• Fig. 1 and 2 on page 2; Figure note changed
19960730
Product specification
-
BF908R_1
-
BF908R_1
-
-
-
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 14 November 2007
Document identifier: BF908-R_N_3
相关型号：
BF908WR-TAPE-13
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal
NXP
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