BFG25AW [NXP]

NPN 5 GHz wideband transistors; NPN 5 GHz宽带晶体管
BFG25AW
型号: BFG25AW
厂家: NXP    NXP
描述:

NPN 5 GHz wideband transistors
NPN 5 GHz宽带晶体管

晶体 小信号双极晶体管 射频小信号双极晶体管 光电二极管 放大器
文件: 总16页 (文件大小:147K)
中文:  中文翻译
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DATA SHEET  
book, halfpage  
BFG25AW; BFG25AW/X  
NPN 5 GHz wideband transistors  
1998 Sep 23  
Product specification  
Supersedes data of August 1995  
Philips Semiconductors  
Product specification  
NPN 5 GHz wideband transistors  
BFG25AW; BFG25AW/X  
FEATURES  
PINNING  
Low current consumption  
(100 µA to 1 mA)  
PIN  
DESCRIPTION  
page  
4
3
2
BFG25AW  
Low noise figure  
1
2
3
4
collector  
base  
Gold metallization ensures  
excellent reliability.  
1
emitter  
emitter  
Top view  
MBK523  
APPLICATIONS  
BFG25AW/X  
Wideband applications in UHF low  
power amplifiers, such as pocket  
telephones and paging systems.  
Fig.1 SOT343N.  
1
2
3
4
collector  
emitter  
base  
MARKING  
DESCRIPTION  
emitter  
TYPE NUMBER  
CODE  
NPN silicon planar epitaxial transistor  
in a 4-pin dual-emitter SOT343N  
plastic package.  
BFG25AW  
N6  
V1  
BFG25AW/X  
QUICK REFERENCE DATA  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
VCBO  
VCEO  
IC  
collector-base voltage  
open emitter  
8
V
collector-emitter voltage open base  
collector current (DC)  
5
V
6.5  
500  
200  
0.3  
mA  
mW  
Ptot  
hFE  
Cre  
total power dissipation  
DC current gain  
Ts 85 °C  
IC = 0.5 mA; VCE = 1 V  
50  
80  
0.2  
5
feedback capacitance  
transition frequency  
IC = 0; VCE = 1 V; f = 1 MHz  
pF  
fT  
IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C 3.5  
GHz  
dB  
GUM  
maximum unilateral  
power gain  
IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C  
16  
F
noise figure  
Γs = Γopt; IC = 1 mA; VCE = 1 V; f = 1 GHz  
2
dB  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VCBO  
VCEO  
VEBO  
IC  
collector-base voltage  
collector-emitter voltage  
emitter-base voltage  
collector current (DC)  
total power dissipation  
storage temperature  
junction temperature  
open emitter  
open base  
8
V
V
V
5
2
open collector  
6.5  
mA  
mW  
°C  
Ptot  
Tstg  
Tj  
Ts 85 °C; see Fig.2; note 1  
500  
+150  
175  
65  
°C  
Note  
1. Ts is the temperature at the soldering point of the collector pin.  
1998 Sep 23  
2
Philips Semiconductors  
Product specification  
NPN 5 GHz wideband transistors  
BFG25AW; BFG25AW/X  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth j-s  
thermal resistance from junction to soldering point Ts 85 °C; note 1  
180  
K/W  
Note  
1. Ts is the temperature at the soldering point of the collector pin.  
CHARACTERISTICS  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
V(BR)CBO collector-base breakdown voltage  
V(BR)CEO collector-emitter breakdown voltage IC = 1 mA; IB = 0  
PARAMETER  
CONDITIONS  
MIN.  
TYP. MAX. UNIT  
IC = 100 µA; IE = 0  
8
V
5
V
V(BR)EBO emitter-base breakdown voltage  
IE = 100 µA; IC = 0  
2
V
ICBO  
hFE  
Cre  
fT  
collector leakage current  
DC current gain  
open emitter; VCB = 5 V; IE = 0  
IC = 0.5 mA; VCE = 1 V  
IC = 0; VCE = 1 V; f = 1 MHz  
50  
200  
0.3  
nA  
50  
80  
0.2  
5
feedback capacitance  
transition frequency  
pF  
IC = 1 mA; VCE = 1 V; f = 1 GHz;  
3.5  
GHz  
Tamb = 25 °C  
GUM  
maximum unilateral power gain;  
note 1  
IC = 0.5 mA; VCE = 1 V;  
f = 1 GHz; Tamb = 25 °C  
16  
8
dB  
dB  
dB  
dB  
IC = 0.5 mA; VCE = 1 V;  
f = 2 GHz; Tamb = 25 °C  
F
noise figure  
Γs = Γopt; IC = 0.5 mA; VCE = 1 V;  
f = 1 GHz  
1.9  
2
Γs = Γopt; IC = 1 mA; VCE = 1 V;  
f = 1 GHz  
Note  
2
S21  
1. GUM is the maximum unilateral power gain, assuming S12 is zero. GUM = 10 log  
dB.  
--------------------------------------------------------------  
(1 S11 2) (1 S22  
)
2
1998 Sep 23  
3
Philips Semiconductors  
Product specification  
NPN 5 GHz wideband transistors  
BFG25AW; BFG25AW/X  
MBG248  
MCD138  
100  
600  
handbook, halfpage  
handbook, halfpage  
h
FE  
P
tot  
80  
60  
40  
20  
0
(mW)  
400  
200  
0
3
2
1
0
50  
100  
150  
200  
10  
10  
10  
1
10  
o
I
(mA)  
T
( C)  
C
s
VCE = 1 V.  
Fig.3 DC current gain as a function of collector  
current; typical values.  
Fig.2 Power derating curve.  
MLB972  
MLB971  
6
0.3  
handbook, halfpage  
handbook, halfpage  
C
f
re  
T
(pF)  
(GHz)  
0.2  
4
2
0
0.1  
0
0
2
4
6
0
1
4
2
3
I
(mA)  
V
(V)  
C
CE  
IC = 0; f = 1 MHz.  
f = 500 MHz; VCE = 1 V; Tamb = 25 °C.  
Fig.4 Feedback capacitance as a function of  
collector-base voltage; typical values.  
Fig.5 Transition frequency as a function of  
collector current; typical values.  
1998 Sep 23  
4
Philips Semiconductors  
Product specification  
NPN 5 GHz wideband transistors  
BFG25AW; BFG25AW/X  
MLB973  
MLB974  
30  
30  
handbook, halfpage  
handbook, halfpage  
gain  
(dB)  
gain  
(dB)  
G
UM  
20  
20  
10  
MSG  
G
UM  
MSG  
10  
0
0
0
0
1
1
2
2
3
3
I
(mA)  
I
(mA)  
C
C
f = 500 MHz; VCE = 1 V.  
f = 1 GHz; VCE = 1 V.  
Fig.6 Gain as a function of collector current;  
typical values.  
Fig.7 Gain as a function of collector current;  
typical values.  
MLB975  
MLB976  
50  
50  
handbook, halfpage  
handbook, halfpage  
gain  
(dB)  
gain  
(dB)  
40  
30  
20  
10  
0
40  
30  
20  
10  
0
G
G
UM  
UM  
MSG  
MSG  
2
3
4
2
3
4
10  
10  
10  
10  
10  
10  
10  
10  
f (MHz)  
f (MHz)  
IC = 0.5 mA; VCE = 1 V.  
IC = 1 mA; VCE = 1 V.  
Fig.8 Gain as a function of frequency;  
typical values.  
Fig.9 Gain as a function of frequency;  
typical values.  
1998 Sep 23  
5
Philips Semiconductors  
Product specification  
NPN 5 GHz wideband transistors  
BFG25AW; BFG25AW/X  
MCD145  
MCD146  
4
4
handbook, halfpage  
handbook, halfpage  
F
F
(dB)  
(dB)  
I
= 2 mA  
C
f = 2 GHz  
3
3
2
1
0
1 GHz  
500 MHz  
1 mA  
2
1
0.5 mA  
0
10  
1  
2
4
3
1
10  
10  
10  
10  
I
(mA)  
f (MHz)  
C
VCE = 1 V.  
VCE = 1 V.  
Fig.10 Minimum noise figure as a function  
of collector current; typical values.  
Fig.11 Minimum noise figure as a function of  
frequency; typical values.  
o
90  
1.0  
1
o
o
0.8  
0.6  
0.4  
0.2  
0
135  
45  
2
0.5  
0.2  
5
F
= 1.9 dB  
min  
0.2  
0.5  
1
2
5
o
Γ
o
opt  
5
180  
0
0
F = 3 dB  
F = 4 dB  
F = 5 dB  
0.2  
0.5  
2
o
o
45  
135  
1
MLB977  
1.0  
o
90  
f = 500 MHz; VCE = 1 V; IC = 1 mA; Zo = 50 Ω.  
Fig.12 Common emitter noise figure circles; typical values.  
6
1998 Sep 23  
Philips Semiconductors  
Product specification  
NPN 5 GHz wideband transistors  
BFG25AW; BFG25AW/X  
o
90  
1.0  
1
o
o
0.8  
0.6  
0.4  
0.2  
0
135  
45  
2
0.5  
stability  
circle  
0.2  
5
F
= 2.0 dB  
min  
Γ
opt  
0.2  
0.5  
1
2
5
o
o
180  
0
0
F = 3 dB  
F = 4 dB  
F = 5 dB  
5
0.2  
0.5  
2
o
o
45  
135  
1
MLB978  
1.0  
o
90  
f = 1 GHz; VCE = 1 V; IC = 1 mA; Zo = 50 Ω.  
Fig.13 Common emitter noise figure circles; typical values.  
o
90  
stability  
circle  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1
o
o
135  
45  
2
0.5  
F = 5 dB  
F = 4 dB  
F = 3 dB  
Γ
opt  
= 2.4 dB  
F
0.2  
5
min  
2
unstable  
region  
0.2  
0.5  
1
5
o
o
180  
0
0
5
0.2  
0.5  
2
o
o
45  
135  
1
MLB979  
1.0  
o
90  
f = 2 GHz; VCE = 1 V; IC = 1 mA; Zo = 50 Ω.  
Fig.14 Common emitter noise figure circles; typical values.  
7
1998 Sep 23  
Philips Semiconductors  
Product specification  
NPN 5 GHz wideband transistors  
BFG25AW; BFG25AW/X  
o
90  
1.0  
1
o
o
0.8  
0.6  
0.4  
0.2  
0
135  
45  
2
0.5  
0.2  
5
0.2  
0.5  
1
2
5
o
o
180  
0
0
40 MHz  
3 GHz  
5
0.2  
0.5  
2
o
o
45  
135  
1
MLB980  
1.0  
o
90  
VCE = 1 V; IC = 1 mA; Zo = 50 Ω..  
Fig.15 Common emitter input reflection coefficient (S11); typical values.  
o
90  
o
o
135  
45  
3 GHz  
40 MHz  
2
o
o
180  
0
5
4
3
1
o
o
135  
45  
o
MLB981  
90  
VCE = 1 V; IC = 1 mA.  
Fig.16 Common emitter forward transmission coefficient (S21); typical values.  
8
1998 Sep 23  
Philips Semiconductors  
Product specification  
NPN 5 GHz wideband transistors  
BFG25AW; BFG25AW/X  
o
90  
o
o
135  
45  
3 GHz  
0.5  
0.4  
0.3  
0.2  
0.1  
40 MHz  
o
o
180  
0
o
o
135  
45  
o
MLB982  
90  
VCE = 1 V; IC = 1 mA.  
Fig.17 Common emitter reverse transmission coefficient (S12); typical values.  
o
90  
1.0  
1
o
o
0.8  
0.6  
0.4  
0.2  
0
135  
45  
2
0.5  
0.2  
5
0.2  
0.5  
1
2
5
o
o
180  
0
0
40 MHz  
5
0.2  
3 GHz  
0.5  
2
o
o
45  
135  
1
MLB983  
1.0  
o
90  
VCE = 1 V; IC = 1 mA; Zo = 50 Ω.  
Fig.18 Common emitter output reflection coefficient (S22); typical values.  
9
1998 Sep 23  
Philips Semiconductors  
Product specification  
NPN 5 GHz wideband transistors  
BFG25AW; BFG25AW/X  
SPICE parameters for the BFG25W crystal  
SEQUENCE No. PARAMETER VALUE  
UNIT  
mV  
SEQUENCE No. PARAMETER VALUE  
UNIT  
36(1)  
37(1)  
38  
VJS  
MJS  
FC  
750.0  
0.000  
0.988  
1
IS  
13.77  
85.65  
0.980  
50.80  
10.00  
2.199  
1.857  
16.97  
0.986  
2.491  
188.0  
205.1  
1.107  
80.00  
1.000  
80.00  
7.911  
5.300  
0.000  
1.110  
3.000  
223.0  
669.7  
0.060  
5.112  
7.909  
1.338  
5.662  
15.37  
229.0  
394.7  
0.043  
0.050  
13.26  
0.000  
aA  
2
BF  
3
NF  
4
VAF  
IKF  
ISE  
NE  
V
Note  
5
A
1. These parameters have not been extracted, the  
default values are shown.  
6
fA  
7
8
BR  
C
9
NR  
handbook, halfpage  
cb  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19(1)  
20(1)  
21(1)  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35 (1)  
VAR  
IKR  
ISC  
NC  
V
mA  
aA  
L
B
L1  
L2  
B
B'  
C'  
C
E'  
C
C
RB  
be  
ce  
IRB  
RBM  
RE  
µA  
L
E
MBC964  
L3  
RC  
XTB  
EG  
E
eV  
QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/fc);  
fc = scaling frequency = 1 GHz.  
XTI  
CJE  
VJE  
MJE  
TF  
fF  
mV  
Fig.19 Package equivalent circuit SOT343N.  
ps  
List of components (see Fig.19)  
XTF  
VTF  
ITF  
DESIGNATION  
VALUE  
UNIT  
V
Cbe  
Ccb  
Cce  
L1  
70  
fF  
mA  
deg  
fF  
mV  
50  
fF  
PTF  
CJC  
VJC  
MJC  
XCJC  
TR  
115  
fF  
0.34  
0.10  
0.25  
0.40  
0.40  
nH  
nH  
nH  
nH  
nH  
L2  
L3  
LB  
ns  
F
LE  
CJS  
1998 Sep 23  
10  
Philips Semiconductors  
Product specification  
NPN 5 GHz wideband transistors  
BFG25AW; BFG25AW/X  
PACKAGE OUTLINES  
Plastic surface mounted package; 4 leads  
SOT343N  
D
B
E
A
X
H
y
v M  
A
E
e
4
3
Q
A
A
1
c
1
2
b
1
b
p
w M B  
L
p
e
1
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
max  
A
UNIT  
b
b
c
D
E
e
e
H
E
L
Q
v
w
y
p
p
1
1
0.4  
0.3  
1.1  
0.8  
0.7  
0.5  
0.25  
0.10  
2.2  
1.8  
1.35  
1.15  
2.2  
2.0  
0.45  
0.15  
0.23  
0.13  
mm  
0.1  
1.3  
1.15  
0.2  
0.2  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
SOT343N  
97-05-21  
1998 Sep 23  
11  
Philips Semiconductors  
Product specification  
NPN 5 GHz wideband transistors  
BFG25AW; BFG25AW/X  
DEFINITIONS  
Data Sheet Status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1998 Sep 23  
12  
Philips Semiconductors  
Product specification  
NPN 5 GHz wideband transistors  
BFG25AW; BFG25AW/X  
NOTES  
1998 Sep 23  
13  
Philips Semiconductors  
Product specification  
NPN 5 GHz wideband transistors  
BFG25AW; BFG25AW/X  
NOTES  
1998 Sep 23  
14  
Philips Semiconductors  
Product specification  
NPN 5 GHz wideband transistors  
BFG25AW; BFG25AW/X  
NOTES  
1998 Sep 23  
15  
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Indonesia: PT Philips Development Corporation, Semiconductors Division,  
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,  
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080  
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,  
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874  
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,  
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,  
Tel. +66 2 745 4090, Fax. +66 2 398 0793  
Ireland: Newstead, Clonskeagh, DUBLIN 14,  
Tel. +353 1 7640 000, Fax. +353 1 7640 200  
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,  
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,  
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007  
Tel. +90 212 279 2770, Fax. +90 212 282 6707  
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,  
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,  
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557  
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461  
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,  
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,  
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077  
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421  
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,  
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,  
Tel. +82 2 709 1412, Fax. +82 2 709 1415  
Tel. +1 800 234 7381  
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,  
Tel. +60 3 750 5214, Fax. +60 3 757 4880  
Uruguay: see South America  
Vietnam: see Singapore  
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,  
Tel. +9-5 800 234 7381  
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,  
Tel. +381 11 625 344, Fax.+381 11 635 777  
For all other countries apply to: Philips Semiconductors,  
Internet: http://www.semiconductors.philips.com  
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,  
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825  
© Philips Electronics N.V. 1998  
SCA60  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
125104/00/03/pp16  
Date of release: 1998 Sep 23  
Document order number: 9397 750 04352  

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