BFG31 [NXP]
PNP 5 GHz wideband transistor; PNP 5 GHz宽带晶体管
| 型号： | BFG31 |
| 厂家： | 
NXP |
| 描述： | PNP 5 GHz wideband transistor |
| 文件： | 总7页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG31
PNP 5 GHz wideband transistor
1995 Sep 12
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFG31
FEATURES
PINNING
PIN
• High output voltage capability
• High gain bandwidth product
• Good thermal stability
DESCRIPTION
emitter
base
page
4
1
2
3
4
• Gold metallization ensures
excellent reliability.
emitter
collector
DESCRIPTION
PNP planar epitaxial transistor
mounted in a plastic SOT223
envelope.
1
2
3
MSB002 - 1
Top view
It is intended for wideband amplifier
applications.
Fig.1 SOT223.
NPN complement is the BFG97.
QUICK REFERENCE DATA
SYMBOL
VCEO
IC
PARAMETER
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
CONDITIONS
MIN.
TYP.
MAX.
−15
UNIT
open base
−
−
−
−
−
V
−
−100
mA
W
Ptot
up to Ts = 135 °C ; note 1
IC = −70 mA; VCE = −10 V;
−
1
hFE
25
−
T
amb = 25 °C
fT
transition frequency
IC = −70 mA; VCE = −10 V;
f = 500 MHz; Tamb = 25 °C
−
−
−
5.0
12
−
−
−
GHz
dB
GUM
Vo
maximum unilateral power
gain
IC = −70 mA; VCE = −10 V;
f = 800 MHz; Tamb = 25 °C
output voltage
IC = −100 mA; VCE = −10 V;
RL = 75 Ω; Tamb = 25 °C
600
mV
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
−
−20
−15
−3
V
−
V
open collector
−
V
−
−100
1
mA
W
°C
°C
Ptot
Tstg
Tj
up to Ts = 135 °C; note 1
−
−65
−
150
175
Note
1. Ts is the temperature at the soldering point of the collector tab.
1995 Sep 12
2
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFG31
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
thermal resistance from junction to
soldering point
up to Ts = 135 °C; note 1
40 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
open emitter; IC = −10 mA
open base; IC = −10 mA
open collector; IE = −0.1 mA
IE = 0; VCB = −10 V
MIN. TYP. MAX. UNIT
V(BR)CBO collector-base breakdown voltage
V(BR)CEO collector-emitter breakdown voltage
V(BR)EBO emitter-base breakdown voltage
−20
−18
−3
−
−
−
−
−
−
V
−
V
−
V
ICBO
hFE
collector cut-off current
DC current gain
−
−1
−
µA
IC = −70 mA; VCE = −10 V;
Tamb = 25 °C
25
Ccb
Ceb
Cre
collector-base capacitance
emitter-base capacitance
feedback capacitance
IC = 0; VCB = −10 V; f = 1 MHz;
IC = 0; VEB = −10 V; f = 1 MHz
−
−
−
1.8
5
−
−
−
pF
pF
pF
IC = 0; VCE = −10 V; f = 1 MHz;
Tamb = 25 °C
1.6
fT
transition frequency
IC = −70 mA; VCE = −10 V;
f = 500 MHz; Tamb = 25 °C
−
−
−
5
−
−
−
GHz
dB
GUM
maximum unilateral power gain; note 1
IC = −70 mA; VCE = −10 V;
f = 500 MHz; Tamb = 25 °C
16
12
IC = −70 mA; VCE = −10 V;
f = 800 MHz; Tamb = 25 °C
dB
Vo
Vo
output voltage
output voltage
note 2
note 3
−
−
600
550
−
−
mV
mV
Notes
2
s21
------------------------------------------------------------
1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM = 10 log
dB.
(1 – s11 2) (1 – s22
)
2
2. dim = −60 dB; IC = −70 mA; VCE = −10 V; RL = 75 Ω; Tamb = 25 °C;
Vp = Vo at dim = −60 dB; fp = 850.25 MHz;
Vq = Vo −6 dB; fq = 858.25 MHz;
Vr = Vo −6 dB;fr = 860.25 MHz;
measured at f(p+q−r) = 848.25 MHz.
3. dim = −60 dB (DIN 45004B); IC = −70 mA; VCE = −10 V; RL = 75 Ω; Tamb = 25 °C;
Vp = Vo = at dim = −60 dB; fp = 445.25 MHz;
Vq = Vo −6 dB; fq = 453.25 MHz;
Vr = Vo −6 dB; fr = 455.25 MHz;
measured at f(p+q−r) = 443.25 MHz.
1995 Sep 12
3
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFG31
MBB344
MBB345
1.2
80
handbook, halfpage
handbook, halfpage
P
tot
(W)
h
1.0
0.8
0.6
0.4
0.2
FE
60
40
20
0
0
0
0
50
100
150
200
o
( C)
100
200
I
(mA)
C
T
s
VCE = −10 V; Tamb = 25 °C.
Fig.3 DC current gain as a function of collector
current.
Fig.2 Power derating curve.
MBB346
MBB347
8
6
handbook, halfpage
handbook, halfpage
C
re
f
T
(pF)
(GHz)
5
4
6
4
2
0
3
2
1
0
50
100
0
10
20
30
I
(mA)
V
(V)
C
CE
f = 1 MHz; Tamb = 25 °C
VCE = −10 V; Tamb = 25 °C.
Fig.4 Feedback capacitance as a function of
collector-emitter voltage.
Fig.5 Transition frequency as a function of
collector current.
1995 Sep 12
4
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFG31
MBB348
MBB349
50
40
handbook, halfpage
handbook, halfpage
d
im
(dB)
d
im
(dB)
45
55
60
50
55
60
65
65
40
40
60
80
100
60
80
100
120
(mA)
I
(mA)
I
C
C
VCE = −10 V; Vo = 650 mV; Tamb = 25 °C;
VCE = −10 V; Vo = 550 mV; Tamb = 25 °C;
f(p+q−r) = 443.25 MHz.
f(p+q−r) = 848.25 MHz.
Fig.6 Intermodulation distortion as a function
of collector current.
Fig.7 Intermodulation distortion as a function
of collector current.
MBB350
MBB351
10
10
handbook, halfpage
handbook, halfpage
d
d
2
2
(dB)
(dB)
20
20
30
40
30
40
50
60
50
60
10
30
50
70
90
110
(mA)
10
30
50
70
90
110
(mA)
I
I
C
C
VCE = −10 V; Vo = 50 dBmV; Tamb = 25 °C;
VCE = −10 V; Vo = 50 dBmV; Tamb = 25 °C;
f(p+q) = 450 MHz.
f(p+q) = 810 MHz.
Fig.8 Second order intermodulation distortion
as a function of collector current.
Fig.9 Second order intermodulation distortion
as a function of collector current.
1995 Sep 12
5
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFG31
PACKAGE OUTLINE
0.95
0.85
0.1 S
S
seating plane
0.32
0.24
6.7
6.3
3.1
2.9
B
M
0.2
A
4
A
0.10
0.01
3.7
3.3
7.3
6.7
o
o
16
max
16
1
2
3
o
10
max
0.80
0.60
1.80
max
M
2.3
0.1
B
(4x)
MSA035 - 1
4.6
Dimensions in mm.
Fig.10 SOT223.
1995 Sep 12
6
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFG31
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Sep 12
7
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