BFG35,115 [NXP]
BFG35 - NPN 4 GHz wideband transistor SC-73 4-Pin;
| 型号： | BFG35,115 |
| 厂家： | 
NXP |
| 描述： | BFG35 - NPN 4 GHz wideband transistor SC-73 4-Pin 放大器 光电二极管 晶体管 |
| 文件： | 总14页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG35
NPN 4 GHz wideband transistor
Product specification
1999 Aug 24
Supersedes data of 1995 Sep 12
NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
DESCRIPTION
PINNING
PIN
page
4
NPN planar epitaxial transistor
mounted in a plastic SOT223
envelope, intended for wideband
amplifier applications. It features high
output voltage capabilities.
DESCRIPTION
emitter
base
1
2
3
4
emitter
collector
1
2
3
MSB002 - 1
Top view
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
CONDITIONS
MIN.
TYP.
MAX. UNIT
VCEO
IC
open base
18
V
150
1
mA
W
Ptot
hFE
fT
up to Ts = 135 C (note 1)
IC = 100 mA; VCE = 10 V; Tj = 25 C 25
70
4
transition frequency
IC = 100 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 C
GHz
dB
GUM
maximum unilateral power gain IC = 100 mA; VCE = 10 V;
15
f = 500 MHz; Tamb = 25 C
IC = 100 mA; VCE = 10 V;
f = 800 MHz; Tamb = 25 C
11
dB
Vo
output voltage
IC = 100 mA; VCE = 10 V;
750
mV
dim = 60 dB; RL = 75 ;
f
(p+qr) = 793.25 MHz; Tamb = 25 C
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
25
V
18
V
open collector
2
V
150
1
mA
W
C
C
Ptot
up to Ts = 135 C (note 1)
Tstg
Tj
65
+150
175
Note
1. Ts is the temperature at the soldering point of the collector tab.
1999 Aug 24
2
NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
40
UNIT
Rth j-s
thermal resistance from junction to soldering point up to Ts = 135 C (note 1)
K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IE = 0; VCB = 10 V
MIN.
TYP. MAX. UNIT
ICBO
hFE
Cc
collector cut-off current
DC current gain
1
A
IC = 100 mA; VCE = 10 V
25
70
2
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCE = 10 V; f = 1 MHz
pF
Ce
10
1.2
4
pF
Cre
fT
pF
IC = 100 mA; VCE = 10 V;
GHz
f = 500 MHz; Tamb = 25 C
GUM
maximum unilateral power gain
(note 1)
IC = 100 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 C
15
11
dB
dB
IC = 100 mA; VCE = 10 V;
f = 800 MHz; Tamb = 25 C
Vo
d2
output voltage
note 2
note 3
note 4
note 5
750
800
55
57
mV
mV
dB
second order intermodulation
distortion
dB
Notes
2
s21
--------------------------------------------------------
1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM = 10 log
dB.
1 – s11 21 – s22 2
2.
dim = 60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C
Vp = Vo at dim = 60 dB; fp = 795.25 MHz;
Vq = Vo 6 dB; fq = 803.25 MHz;
Vr = Vo 6 dB; fr = 805.25 MHz;
measured at f(p+qr) = 793.25 MHz.
3. dim = 60 dB (DIN 45004B); IC = 100 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C
Vp = Vo at dim = 60 dB; fp = 445.25 MHz;
Vq = Vo 6 dB; fq = 453.25 MHz;
Vr = Vo 6 dB; fr = 455.25 MHz;
measured at f(p+qr) = 443.25 MHz.
4. IC = 60 mA; VCE = 10 V; RL = 75 ;
Vp = Vq = Vo = 50 dBmV;
f(p+q) = 450 MHz; fp = 50 MHz; fq = 400 MHz.
5. IC = 60 mA; VCE = 10 V; RL = 75 ;
Vp = Vq = VO = 50 dBmV;
f(p+q) = 810 MHz; fp = 250 MHz; fq = 560 MHz.
1999 Aug 24
3
NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
V
CC
C4
L6
C5
C7
L5
V
BB
C3
R1
C6
L3
output
75
R2
Ω
C1
L1
L2
L4
input
75
DUT
Ω
C2
R3
R4
MBB284
Fig.2 Intermodulation and second harmonic test circuit.
List of components (see test circuit)
DESIGNATION
DESCRIPTION
VALUE
10 nF
DIMENSIONS
CATALOGUE NO.
2222 590 08627
2222 851 12108
2222 629 08103
C1, C3, C5, C6 multilayer ceramic capacitor
C2, C7
C4 (note 1)
L1
multilayer ceramic capacitor
miniature ceramic plate capacitor
microstrip line
1 pF
10 nF
75
length 7mm;
width 2.5 mm
L2
microstrip line
75
length 22mm;
width 2.5 mm
L3 (note 1)
L4
1.5 turns 0.4 mm copper wire
microstripline
int. dia. 3 mm;
winding pitch 1 mm
75
length 19 mm;
width 2.5 mm
L5
Ferroxcube choke
0.4 mm copper wire
metal film resistor
metal film resistor
metal film resistor
5 H
3122 108 20153
L6 (note 1)
R1
25 nH
10 k
200
27
length 30 mm
2322 180 73103
2322 180 73201
2322 180 73279
R2 (note 1)
R3, R4
Note
1. Components C4, L3, L6 and R2 are mounted on the underside of the PCB.
The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (r = 2.2);
thickness 116 inch; thickness of copper sheet 132 inch.
1999 Aug 24
4
NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
V
V
CC
BB
C3
C5
R1
L5
R3
R4
C1
C6
L3
75 Ω
input
75 Ω
output
L4
L1
L2
C2
C7
C4
R2
L6
MBB299
80 mm
60 mm
MBB298
MBB297
Fig.3 Intermodulation test circuit printed circuit board.
5
1999 Aug 24
NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
MBB336
MBB361
1.2
120
handbook, halfpage
handbook, halfpage
P
tot
(W)
h
1.0
0.8
0.6
0.4
0.2
FE
80
40
0
0
0
0
50
100
150
200
C)
40
80
120
160
(mA)
o
T
(
I
C
s
VCE = 10 V; Tj = 25 C.
Fig.5 DC current gain as a function of collector
current.
Fig.4 Power derating curve.
MBB381
MBB357
8
3
handbook, halfpage
handbook, halfpage
f
T
C
re
(pF)
(GHz)
6
2
4
2
0
1
0
0
40
80
120
160
0
4
8
12
16
V
20
(V)
I
(mA)
C
CE
VCE = 10 V; f = 500 MHz; Tj = 25 C
IE = 0; f = 1 MHz; Tj = 25 C.
Fig.6 Feedback capacitance as a function of
collector-emitter voltage.
Fig.7 Transition frequency as a function of
collector current.
1999 Aug 24
6
NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
MBB386
MBB385
40
45
handbook, halfpage
handbook, halfpage
d
im
(dB)
G
UM
(dB)
50
30
55
60
20
10
65
0
70
20
2
4
3
40
60
80
100
120
(mA)
10
10
10
10
f (MHz)
I
C
VCE = 10 V; Vo = 800 mV; f(p+qr) = 443.25 MHz; Tamb = 25 C.
IC = 100 mA; VCE = 10 V; Tamb = 25 C.
Fig.8 Maximum unilateral power gain as a
function of frequency.
Fig.9 Intermodulation distortion as a function of
collector current.
MBB383
MBB382
45
45
handbook, halfpage
handbook, halfpage
d
d
im
2
(dB)
(dB)
50
50
55
60
55
60
65
65
70
70
20
40
60
80
100
120
(mA)
20
40
60
80
100
120
(mA)
I
I
C
C
VCE = 10 V; Vo = 750 mV; f(p+qr) = 793.25 MHz; Tamb = 25 C.
VCE = 10 V; Vo = 50 dBmV; f(p+q) = 450 MHz; Tamb = 25 C.
Fig.10 Intermodulation distortion as a function of
collector current.
Fig.11 Second order intermodulation distortion as
a function of collector current.
1999 Aug 24
7
NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
MBB384
45
handbook, halfpage
d
2
(dB)
50
55
60
65
70
20
40
60
80
100
120
(mA)
I
C
VCE = 10 V; Vo = 50 dBmV; f(p+q) = 810 MHz; Tamb = 25 C.
Fig.12 Second order intermodulation distortion as
a function of collector current.
1999 Aug 24
8
NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
50
0
25
100
10
250
+ j
10
25
50
100
250
0
– j
250
10
3 GHz
100
25
MBB380
50
IC = 100 mA; VCE = 10 V; Tamb = 25 C; Zo = 50 .
Fig.13 Common emitter input reflection coefficient (S11).
o
90
o
o
60
120
o
o
150
30
50 40 30 20 10
o
o
0
180
o
o
30
150
o
o
60
120
o
MBB286
90
IC = 100 mA; VCE = 10 V; Tamb = 25 C.
Fig.14 Common emitter forward transmission coefficient (S21).
9
1999 Aug 24
NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
o
90
o
o
60
120
o
o
150
30
0.1 0.2 0.3 0.4 0.5 0.6
o
o
0
180
o
o
30
150
o
o
60
120
o
MBB285
90
IC = 100 mA; VCE = 10 V; Tamb = 25 C.
Fig.15 Common emitter reverse transmission coefficient (S12).
50
25
100
10
250
0
+ j
– j
10
25
50
100
250
0
250
10
3 GHz
100
25
MBB379
50
IC = 100 mA; VCE = 10 V; Tamb = 25 C; Zo = 50 .
Fig.16 Common emitter output reflection coefficient (S22).
10
1999 Aug 24
NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
PACKAGE OUTLINE
Plastic surface-mounted package with increased heatsink; 4 leads
SOT223
D
B
E
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
1
E
1.8
1.5
0.10 0.80
0.01 0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
7.3
6.7
1.1
0.7
0.95
0.85
mm
4.6
2.3
0.2
0.1
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-10
06-03-16
SOT223
SC-73
1999 Aug 24
11
NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DEFINITIONS
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
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not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
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of an NXP Semiconductors product can reasonably be
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accepts no liability for inclusion and/or use of NXP
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DISCLAIMERS
Limited warranty and liability Information in this
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However, NXP Semiconductors does not give any
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the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
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Applications Applications that are described herein for
any of these products are for illustrative purposes only.
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warranty that such applications will be suitable for the
specified use without further testing or modification.
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Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
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for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
1999 Aug 24
12
NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
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customer(s). NXP does not accept any liability in this
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Quick reference data The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
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product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
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Semiconductors’ product specifications.
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1999 Aug 24
13
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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© NXP B.V. 2010
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R77/03/pp14
Date of release: 1999 Aug 24
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