BFG403W [NXP]
NPN 17 GHz wideband transistor; NPN 17 GHz宽带晶体管型号: | BFG403W |
厂家: | NXP |
描述: | NPN 17 GHz wideband transistor |
文件: | 总12页 (文件大小:111K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
BFG403W
NPN 17 GHz wideband transistor
Product specification
1998 Mar 11
Supersedes data of 1997 Oct 29
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 17 GHz wideband transistor
BFG403W
FEATURES
PINNING
PIN
• Low current
DESCRIPTION
• Very high power gain
• Low noise figure
1
2
3
4
emitter
base
• High transition frequency
• Very low feedback capacitance.
emitter
collector
APPLICATIONS
• Pager front ends
• RF front end
3
4
1
handbook, halfpage
• Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
• Radar detectors.
2
Top view
MSB842
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
Marking code: P3.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCBO
VCEO
IC
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
open emitter
open base
−
−
10
4.5
3.6
16
120
−
V
−
−
V
−
3
mA
mW
Ptot
hFE
Cre
fT
Ts ≤ 140 °C
−
−
IC = 3 mA; VCE = 2 V; Tj = 25 °C
50
−
80
20
17
22
1
feedback capacitance
transition frequency
maximum power gain
noise figure
IC = 0; VCB = 2 V; f = 1 MHz
fF
IC = 3 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C −
IC = 3 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C −
−
GHz
dB
dB
Gmax
F
−
IC = 1 mA; VCE = 2 V; f = 900 MHz; ΓS = Γopt
−
−
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
1998 Mar 11
2
Philips Semiconductors
Product specification
NPN 17 GHz wideband transistor
BFG403W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
10
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
−
−
−
−
−
V
V
V
open base
4.5
1
open collector
collector current (DC)
total power dissipation
storage temperature
3.6
16
mA
mW
°C
Ptot
Tstg
Tj
Ts ≤ 140 °C; note 1; see Fig.2
−65
+150
150
operating junction temperature
−
°C
Note
1. Ts is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
820
K/W
MGD957
20
handbook, halfpage
P
tot
(mW)
10
0
0
40
80
120
160
T
(°C)
s
Fig.2 Power derating curve.
1998 Mar 11
3
Philips Semiconductors
Product specification
NPN 17 GHz wideband transistor
BFG403W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
V(BR)CBO collector-base breakdown voltage
V(BR)CEO collector-emitter breakdown voltage IC = 1 mA; IB = 0
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IC = 2.5 µA; IE = 0
10
4.5
1
−
−
V
−
−
V
V(BR)EBO emitter-base breakdown voltage
IE = 2.5 µA; IC = 0
−
−
V
ICBO
hFE
Cc
collector-base leakage current
DC current gain
IE = 0; VCB = 4.5 V
−
−
15
120
−
nA
IC = 3 mA; VCE = 2 V; see Fig.3
IE = ie = 0; VCB = 2 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
50
−
80
170
315
20
collector capacitance
emitter capacitance
fF
fF
fF
Ce
−
−
Cre
feedback capacitance
IC = 0; VCB = 2 V; f = 1 MHz;
see Fig.4
−
−
fT
transition frequency
IC = 3 mA; VCE = 2 V; f = 2 GHz;
Tamb = 25 °C; see Fig.5
−
−
−
−
−
−
−
−
−
17
20
22
5
−
−
−
−
−
−
−
−
−
GHz
dB
Gmax
maximum power gain; note 1
IC = 0.5 mA; VCE = 1 V; f = 900 MHz;
Tamb = 25 °C; see Figs 6 and 8
IC = 3 mA; VCE = 2 V; f = 2 GHz;
Tamb = 25 °C; see Figs 7 and 8
dB
insertion power gain
noise figure
IC = 0.5 mA; VCE = 1 V; f = 900 MHz;
dB
2
S21
Tamb = 25 °C; see Fig.8
IC = 3 mA; VCE = 2 V; f = 2 GHz;
Tamb = 25 °C; see Fig.8
14
1
dB
F
IC = 1 mA; VCE = 2 V; f = 900 MHz;
ΓS = Γopt; see Fig.13
dB
IC = 1 mA; VCE = 2 V; f = 2 GHz;
ΓS = Γopt; see Fig.13
1.6
−5
6
dB
PL1
ITO
output power at 1 dB gain
compression
IC = 1 mA; VCE = 1 V; f = 900 MHz;
ZS = ZS opt; ZL = ZL opt; note 2
dBm
dBm
third order intercept point
IC = 1 mA; VCE = 1 V; f = 900 MHz;
ZS = ZS opt; ZL = ZL opt; note 2
Notes
1. Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG; see Figs 6, 7 and 8.
2. ZS is optimized for noise; ZL is optimized for gain.
1998 Mar 11
4
Philips Semiconductors
Product specification
NPN 17 GHz wideband transistor
BFG403W
MGG678
MGG679
120
50
handbook, halfpage
handbook, halfpage
C
re
(fF)
h
FE
40
80
(1)
(2)
(3)
30
20
10
40
0
0
0
0
2
4
6
1
2
3
4
5
(V)
I
(mA)
C
V
CB
(1) VCE = 3 V.
(2) VCE = 2 V.
(3) VCE = 1 V.
IC = 0; f = 1 MHz.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
MGG709
MGG680
20
30
handbook, halfpage
handbook, halfpage
f
T
(GHz)
MSG
(dB)
16
20
10
0
12
8
4
0
1
10
0
2
4
6
I
(mA)
C
I
(mA)
C
VCE = 2 V; f = 2 GHz; Tamb = 25 °C.
VCE = 2 V; f = 900 MHz.
Fig.5 Transition frequency as a function of
collector current; typical values.
Fig.6 Maximum stable gain as a function of
collector current; typical values.
1998 Mar 11
5
Philips Semiconductors
Product specification
NPN 17 GHz wideband transistor
BFG403W
MGG711
MGG710
30
40
handbook, halfpage
handbook, halfpage
gain
(dB)
MSG
(dB)
MSG
30
20
10
20
10
0
S
21
0
2
3
4
0
2
4
6
10
10
10
10
I
(mA)
f (MHz)
C
VCE = 2 V; f = 2 GHz.
IC = 3 mA; VCE = 2 V.
Fig.7 Maximum stable gain as a function of
collector current; typical values.
Fig.8 Gain as a function of frequency;
typical values.
90°
1.0
1
0.8
135°
45°
2
0.5
0.6
0.4
0.2
5
0.2
0.2
0.5
1
2
5 40 MHz
180°
0°
0
0
5
0.2
3 GHz
0.5
2
−45°
−135°
1
1.0
−90°
MGG713
IC = 3 mA; VCE = 2 V; Zo = 50 Ω.
Fig.9 Common emitter input reflection coefficient (S11); typical values.
6
1998 Mar 11
Philips Semiconductors
Product specification
NPN 17 GHz wideband transistor
BFG403W
90°
135°
45°
3 GHz
40 MHz
180°
0°
25
20
15
10
5
−135°
−45°
MGG714
−90°
IC = 3 mA; VCE = 2 V.
Fig.10 Common emitter forward transmission coefficient (S21); typical values.
90°
135°
45°
3 GHz
0.05 0.04 0.03 0.02 0.01
180°
0°
40 MHz
−135°
−45°
MGG715
−90°
IC = 3 mA; VCE = 2 V.
Fig.11 Common emitter reverse transmission coefficient (S12); typical values.
7
1998 Mar 11
Philips Semiconductors
Product specification
NPN 17 GHz wideband transistor
BFG403W
90°
1.0
0.8
0.6
0.4
0.2
0
1
135°
45°
2
0.5
0.2
5
40 MHz
0.2
0.5
1
2
5
180°
0°
0
5
0.2
3 GHz
2
0.5
−45°
−135°
1
1.0
−90°
MGG716
IC = 3 mA; VCE = 2 V; Zo = 50 Ω.
Fig.12 Common emitter output reflection coefficient (S22); typical values.
Noise data
CE = 2 V; typical values.
V
MGG712
f
IC
(mA)
Fmin
(dB)
rn
(Ω)
3
Γmag
0.91
Γangle
handbook, halfpage
(MHz)
F
min
(dB)
900
0.5
0.9
4.7
5.1
1.41
(1)
(2)
1
1.1
1.4
1.6
1.9
2.1
1.8
1.6
1.8
2.1
2.4
2.8
0.83
0.71
0.62
0.56
0.50
0.71
0.74
0.64
0.56
0.48
0.45
1.12
0.97
0.88
0.84
0.82
1.47
1.11
0.93
0.91
0.9
2
2
5.1
3
5.0
4
4.9
5
4.2
1
2000
0.5
1
27.5
26.1
26.3
26.1
26.7
25.8
2
3
0
0
2
4
6
I
(mA)
4
C
5
0.85
(1) VCE = 2 V; f = 2 GHz.
(2) VCE = 2 V; f = 900 MHz.
Fig.13 Minimum noise figure as a function of the
collector current; typical values.
1998 Mar 11
8
Philips Semiconductors
Product specification
NPN 17 GHz wideband transistor
BFG403W
SPICE parameters for the BFG403W die
SEQUENCE No. PARAMETER VALUE
UNIT
SEQUENCE No. PARAMETER VALUE
UNIT
39 (2)(3)
40 (2)
41 (3)
Cbp
145
25
fF
Ω
Ω
1
IS
5.554
145.0
0.993
31.12
35.75
35.35
3.000
11.37
0.985
1.874
0.014
57.08
1.546
122.4
0.000
52.45
1.511
15.12
1.500
1.110
3.000
36.61
900.0
0.346
4.122
68.20
2.004
0.179
0.000
16.21
556.9
0.207
0.500
00.00
78.59
418.3
0.239
0.550
aA
−
Rsb1
Rsb2
2
BF
19
3
NF
−
4
VAF
IKF
ISE
NE
V
Notes
5
mA
fA
−
1. These parameters have not been extracted, the
default values are shown.
6
7
2. Bonding pad capacity Cbp in series with substrate
resistance Rsb1 between B′ and E′.
8
BR
−
3. Bonding pad capacity Cbp in series with substrate
9
NR
−
resistance Rsb2 between C′ and E′.
10
11
VAR
IKR
ISC
NC
V
A
12
13
14
15
16
17
18
19 (1)
20 (1)
21 (1)
22
23
24
25
26
27
28
29
30
31
32
33
34 (1)
35 (1)
36 (1)
37 (1)
38
aA
−
C
handbook, halfpage
cb
RB
Ω
A
IRB
RBM
RE
L1
L2
B
B'
C'
C
Ω
Ω
Ω
−
E'
C
C
be
ce
RC
XTB
EG
MGD956
eV
−
L3
XTI
CJE
VJE
MJE
TF
fF
mV
−
E
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc)
fc = scaling frequency = 1 GHz.
ps
−
XTF
VTF
ITF
Fig.14 Package equivalent circuit SOT343R2.
V
A
List of components (see Fig.14)
PTF
CJC
VJC
MJC
XCJC
TR
deg
fF
mV
−
DESIGNATION
VALUE
UNIT
Cbe
Ccb
Cce
L1
80
2
fF
fF
80
fF
−
1.1
nH
nH
nH
ns
fF
mV
−
L2
1.1
CJS
VJS
MJS
FC
L3 (note 1)
0.25
Note
−
1. External emitter inductance to be added separately
due to the influence of the printed-circuit board.
1998 Mar 11
9
Philips Semiconductors
Product specification
NPN 17 GHz wideband transistor
BFG403W
PACKAGE OUTLINE
Plastic surface mounted package; reverse pinning; 4 leads
SOT343R
D
B
E
A
X
H
v
M
A
y
E
e
3
4
Q
A
A
1
c
2
1
L
p
w
M
B
b
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
b
c
D
E
e
e
H
E
L
Q
v
w
y
p
p
1
1
0.4
0.3
1.1
0.8
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.15
0.2
0.2
0.1
1.3
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
SOT343R
97-05-21
1998 Mar 11
10
Philips Semiconductors
Product specification
NPN 17 GHz wideband transistor
BFG403W
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Mar 11
11
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© Philips Electronics N.V. 1998
SCA57
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125104/00/04/pp12
Date of release: 1998 Mar 11
Document order number: 9397 750 03387
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