BFG591 [NXP]
NPN 7 GHz wideband transistor; NPN 7 GHz的宽带晶体管
| 型号： | BFG591 |
| 厂家： | 
NXP |
| 描述： | NPN 7 GHz wideband transistor |
| 文件： | 总12页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG591
NPN 7 GHz wideband transistor
1995 Sep 04
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
FEATURES
DESCRIPTION
page
4
• High power gain
NPN silicon planar epitaxial transistor
in a plastic, 4-pin SOT223 package.
• Low noise figure
• High transition frequency
PINNING
• Gold metallization ensures
excellent reliability.
PIN
1
DESCRIPTION
emitter
APPLICATIONS
2
base
1
2
3
Intended for applications in the GHz
range such as MATV or CATV
amplifiers and RF communications
subscriber equipment.
3
emitter
collector
MSB002 - 1
Top view
4
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
CONDITIONS
MIN.
TYP.
MAX.
20
UNIT
VCBO
VCEO
IC
open emitter
open base
−
−
−
−
−
V
−
15
200
2
V
−
mA
W
Ptot
hFE
Cre
up to Ts = 80 °C; note 1
−
IC = 70 mA; VCE = 8 V
60
−
90
0.7
7
250
−
feedback capacitance
transition frequency
IC = Ic = 0; VCE = 12 V; f = 1 MHz
IC = 70 mA; VCE = 12 V; f = 1 GHz
pF
fT
−
−
GHz
dB
GUM
maximum unilateral
power gain
IC = 70 mA; VCE = 12 V;
f = 900 MHz; Tamb = 25 °C
−
13
−
insertion power gain
IC = 70 mA; VCE = 12 V;
f = 900 MHz; Tamb = 25 °C
−
12
−
dB
2
s21
Note
1. Ts is the temperature at the soldering point of the collector pin.
1995 Sep 04
2
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
20
UNIT
−
−
−
−
−
V
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open base
15
V
open collector
3
V
200
2
mA
W
°C
°C
Ptot
up to Ts = 80 °C; note 1
Tstg
−65
+150
150
Tj
−
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
35
UNIT
Rth j-s
thermal resistance from junction to
soldering point
note 1
K/W
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.
1995 Sep 04
3
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
CHARACTERISTICS
Tj = 25 °C (unless otherwise specified).
SYMBOL
V(BR)CBO collector-base breakdown voltage
V(BR)CES collector-emitter breakdown voltage IC = 10 mA; IB = 0
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
20
UNIT
IC = 0.1 mA; IE = 0
−
−
−
−
−
−
−
−
V
15
3
V
V(BR)EBO emitter-base breakdown voltage
IE = 0.1 mA; IC = 0
IE = 0; VCB = 10 V
IC = 70 mA; VCE = 8 V
V
ICBO
hFE
Cre
collector-base leakage current
DC current gain
100
250
−
nA
60
90
feedback capacitance
IB = Ib = 0; VCE = 12 V;
f = 1 MHz
−
0.7
pF
fT
transition frequency
IC = 70 mA; VCE = 12 V;
f = 1 GHz
−
−
−
−
−
7
−
−
−
−
−
GHz
dB
GUM
maximum unilateral power gain;
note 1
IC = 70 mA; VCE = 12 V;
f = 900 MHz; Tamb = 25 °C
13
7.5
12
700
IC = 70 mA; VCE = 12 V;
f = 2 GHz; Tamb = 25 °C
dB
insertion power gain
output voltage
IC = 70 mA; VCE = 12 V;
f = 1 GHz; Tamb = 25 °C
dB
2
s21
Vo
note 2
mV
Notes
2
s21
------------------------------------------------------------
1. GUM is the maximum unilateral power gain, assuming s12 is zero. GUM = 10 log
dB.
(1 – s11 2) (1 – s22
)
2
2. dim = 60 dB (DIN45004B);
Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz; measured at f(p+q-r) = 793.25 MHz.
1995 Sep 04
4
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
MGC791
MRA749
3.0
tot
250
handbook, halfpage
P
h
(W)
FE
2.5
200
150
100
50
2.0
1.5
1.0
0.5
0
0
10
2
1
2
0
50
100
150
200
o
10
1
10
10
T
( C)
s
I
(mA)
C
VCE = 12 V.
Fig.3 DC current gain as a function of collector
current, typical values.
Fig.2 Power derating curve.
MGC792
MGC793
1.2
8
handbook, halfpage
handbook, halfpage
f
T
C
re
(pF)
(GHz)
6
0.8
4
2
0.4
0
0
2
0
4
8
12
16
1
10
10
V
(V)
I
(mA)
CB
C
IC = 0; f = 1 MHz.
f = 1 GHz; VCE = 12 V.
Fig.4 Feedback capacitance as a function of
collector-base voltage, typical values.
Fig.5 Transition frequency as a function of
collector current, typical values.
1995 Sep 04
5
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
MGC795
MGC794
25
10
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
G
max
20
15
8
6
4
2
G
UM
G
max
G
UM
10
5
0
0
0
0
40
80
120
40
80
120
I
(mA)
I
(mA)
C
C
f = 900 MHz; VCE = 12 V.
f = 2 GHz; VCE = 12 V.
Fig.6 Gain as a function of collector current;
typical values.
Fig.7 Gain as a function of collector current;
typical values.
MGC796
50
handbook, halfpage
gain
(dB)
G
UM
40
30
20
10
0
MSG
G
max
2
3
4
10
10
10
10
f (MHz)
IC = 70 mA; VCE = 12 V.
Fig.8 Gain as a function of frequency;
typical values.
1995 Sep 04
6
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
MGC797
MGC798
−20
−20
handbook, halfpage
handbook, halfpage
d
d
im
2
(dB)
(dB)
−30
−30
−40
−50
−60
−70
−40
−50
−60
−70
0
40
80
120
0
40
80
120
I
(mA)
I
(mA)
C
C
VCE = 12 V; Vo = 316 mV; f(p+q) = 810 MHz.
VCE = 12 V; Vo = 700 mV; f(p+q-r) = 793.25 MHz.
Fig.9 Intermodulation distortion as a function
of collector current; typical values.
Fig.10 Second order Intermodulation distortion as
a function of collector current; typical values.
1995 Sep 04
7
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
o
90
1.0
0.8
0.6
0.4
0.2
0
1
o
o
135
45
2
0.5
3 GHz
0.2
5
0.2
0.5
1
2
5
o
o
180
0
0
40 MHz
5
0.2
0.5
2
o
o
45
135
1
MGC799
1.0
o
90
VCE = 12 V; IC = 70 mA; Zo = 50 Ω.
Fig.11 Common emitter input reflection coefficient (s11); typical values.
o
90
o
o
135
45
40 MHz
3 GHz
o
o
180
0
50
40
30
20
10
o
o
135
45
o
MGC800
90
VCE = 12 V; IC = 70 mA.
Fig.12 Common emitter forward transmission coefficient (s21); typical values.
8
1995 Sep 04
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
o
90
o
o
135
45
3 GHz
0.5
0.4
0.3
0.2
0.1
40 MHz
o
o
180
0
o
o
135
45
o
MGC801
90
VCE = 12 V; IC = 70 mA.
Fig.13 Common emitter reverse transmission coefficient (s12); typical values.
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
0.2
5
3 GHz
0.2
0.5
1
2
5
o
o
180
0
0
40 MHz
5
0.2
0.5
2
o
o
45
135
1
MGC802
1.0
o
90
VCE = 12 V; IC = 70 mA; Zo = 50 Ω.
Fig.14 Common emitter output reflection coefficient (s22); typical values.
9
1995 Sep 04
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
SPICE parameters for the BFG591 crystal
SEQUENCE No. PARAMETER VALUE
UNIT
1
IS
1.341
123.5
.988
fA
−
C
handbook, halfpage
cb
2
BF
3
NF
m
4
VAF
IKF
ISE
NE
75.85
9.656
232.2
2.134
10.22
1.016
1.992
294.1
211.0
997.2
5.00
V
L
B
L1
L2
C
B
B'
C'
5
A
6
fA
−
E'
C
C
be
ce
7
L
E
8
BR
−
MBC964
9
NR
−
10
11
VAR
IKR
ISC
NC
V
L3
mA
aA
−
E
12
13
14
15
16
17
18
19 (1)
20 (1)
21 (1)
22
23
24
25
26
27
28
29
30
31
32
33
34
35 (1)
36 (1)
37 (1)
38
RB
Ω
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc);
fc = scaling frequency = 1 GHz.
IRB
RBM
RE
1.000
5.00
µA
Ω
Fig.15 Package equivalent circuit SOT223.
1.275
920.6
0.000
1.110
3.000
3.821
600.0
348.5
13.60
71.73
10.28
1.929
0.000
1.409
219.4
166.5
2.340
543.7
0.000
750.0
0.000
733.2
Ω
RC
mΩ
−
XTB
EG
List of components (see Fig.15)
EV
−
DESIGNATION
VALUE
182
UNIT
XTI
CJE
VJE
MJE
TF
Cbe
Ccb
Cce
L1
fF
pF
mV
m
16
fF
249
fF
0.025
1.19
0.60
1.50
0.50
nH
nH
nH
nH
nH
ps
−
L2
XTF
VTF
ITF
L3
V
LB
A
LE
PTF
CJC
VJC
MJC
XCJ
TR
deg
pF
mV
m
m
ns
F
CJS
VJS
MJS
FC
mV
−
m
Note
1. These parameters have not been extracted, the
default values are shown.
1995 Sep 04
10
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
PACKAGE OUTLINE
0.95
0.85
0.1 S
S
seating plane
6.7
6.3
0.32
0.24
B
3.1
2.9
M
0.2
A
4
A
0.10
0.01
3.7
3.3
7.3
6.7
o
o
16
16
max
1
2
3
o
10
max
1.80
max
0.80
0.60
M
2.3
0.1
B
(4x)
MSA035 - 1
4.6
Dimensions in mm.
Fig.16 SOT223.
1995 Sep 04
11
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFG591
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Sep 04
12
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