BFG67TRL [NXP]

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BFG67TRL
型号: BFG67TRL
厂家: NXP    NXP
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晶体 晶体管
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DISCRETE SEMICONDUCTORS  
DATA SHEET  
BFG67; BFG67/X; BFG67/XR  
NPN 8 GHz wideband transistors  
1998 Oct 02  
Product specification  
Supersedes data of September 1995  
Philips Semiconductors  
Product specification  
NPN 8 GHz wideband transistors  
BFG67; BFG67/X; BFG67/XR  
FEATURES  
PINNING  
PIN  
High power gain  
DESCRIPTION  
Low noise figure  
BFG67  
collector  
BFG67/X  
collector  
BFG67/XR  
collector  
High transition frequency  
1
2
3
4
Gold metallization ensures  
excellent reliability.  
base  
emitter  
base  
emitter  
base  
emitter  
emitter  
emitter  
emitter  
APPLICATIONS  
Wideband applications in the GHz  
range, such as satellite TV tuners and  
portable RF communications  
equipment.  
DESCRIPTION  
NPN silicon transistor in a 4-pin,  
dual-emitter SOT143B plastic  
package. Available with in-line emitter  
pinning (BFG67) and cross emitter  
pinning (BFG67/X). Version with  
reverse pinning (BFG67/XR) also  
available on request.  
4
3
2
3
4
1
2
1
Top view  
MSB014  
Top view  
MSB035  
MARKING  
TYPE NUMBER  
CODE  
BFG67 (Fig.1)  
V3  
Fig.1 Simplified outline  
SOT143B.  
Fig.2 Simplified outline  
SOT143R.  
BFG67/X (Fig.1)  
BFG67/XR (Fig.2)  
V12  
V26  
QUICK REFERENCE DATA  
SYMBOL  
PARAMETER  
CONDITIONS  
TYP.  
MAX.  
UNIT  
VCEO  
IC  
collector-emitter voltage  
collector current (DC)  
total power dissipation  
feedback capacitance  
transition frequency  
open base  
10  
50  
V
mA  
mW  
pF  
Ptot  
Cre  
fT  
Ts 65 °C  
300  
IC = ic = 0; VCB = 8 V; f = 1 MHz  
IC = 15 mA; VCE = 8 V; f = 500 MHz  
0.5  
8
GHz  
dB  
GUM  
maximum unilateral power IC = 15 mA; VCE = 8 V;  
17  
gain  
Tamb = 25 °C; f = 1 GHz  
F
noise figure  
Γs = Γopt; IC = 5 mA; VCE = 8 V;  
Tamb = 25 °C; f = 1 GHz  
1.3  
2.2  
dB  
dB  
Γs = Γopt; IC = 5 mA; VCE = 8 V;  
Tamb = 25 °C; f = 2 GHz  
1998 Oct 02  
2
Philips Semiconductors  
Product specification  
NPN 8 GHz wideband transistors  
BFG67; BFG67/X; BFG67/XR  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
collector-base voltage  
CONDITIONS  
open emitter  
MIN.  
MAX.  
20  
UNIT  
VCBO  
VCEO  
VEBO  
IC  
V
V
V
collector-emitter voltage  
emitter-base voltage  
open base  
10  
open collector  
2.5  
50  
collector current (DC)  
total power dissipation  
storage temperature range  
junction temperature  
mA  
mW  
°C  
Ptot  
Tstg  
Tj  
Ts 65 °C; see Fig.3; note 1  
380  
150  
175  
65  
°C  
Note  
1. Ts is the temperature at the soldering point of the collector pin.  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
K/W  
Rth j-s  
thermal resistance from junction to soldering point  
note 1  
290  
Note  
1. Ts is the temperature at the soldering point of the collector pin.  
MBC984 - 1  
400  
handbook, halfpage  
P
tot  
(mW)  
300  
200  
100  
0
0
50  
100  
150  
200  
o
T ( C)  
s
Fig.3 Power derating curve.  
1998 Oct 02  
3
Philips Semiconductors  
Product specification  
NPN 8 GHz wideband transistors  
BFG67; BFG67/X; BFG67/XR  
CHARACTERISTICS  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
VCB = 5 V; IE = 0  
MIN.  
TYP.  
MAX.  
50  
UNIT  
nA  
ICBO  
hFE  
fT  
collector leakage current  
DC current gain  
IC = 15 mA; VCE = 5 V  
60  
100  
8
transition frequency  
collector capacitance  
emitter capacitance  
feedback capacitance  
IC = 15 mA; VCE = 8 V; f = 500 MHz  
IE = ie = 0; VCB = 8 V; f = 1 MHz  
IC = ic = 0; VEB = 0.5 V; f = 1 MHz  
IC = ic = 0; VCB = 8 V; f = 1 MHz  
GHz  
pF  
Cc  
0.7  
1.3  
0.5  
17  
Ce  
pF  
Cre  
GUM  
pF  
maximum unilateral power IC = 15 mA; VCE = 8 V;  
dB  
gain; note 1  
Tamb = 25 °C; f = 1 GHz  
IC = 15 mA; VCE = 8 V;  
Tamb = 25 °C; f = 2 GHz  
10  
1.3  
1.7  
2.5  
3
dB  
dB  
dB  
dB  
dB  
F
noise figure  
Γs = Γopt; IC = 5 mA; VCE = 8 V  
Tamb = 25 °C; f = 1 GHz  
Γs = Γopt; IC = 15 mA; VCE = 8 V;  
Tamb = 25 °C; f = 1 GHz  
IC = 5 mA; VCE = 8 V;  
Tamb = 25 °C; f = 2 GHz; ZS = 60 Ω  
IC = 15 mA; VCE = 8 V;  
Tamb = 25 °C; f = 2 GHz; ZS = 60 Ω  
Note  
2
S21  
1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM = 10 log  
dB.  
--------------------------------------------------------------  
(1 S11 2) (1 S22  
)
2
1998 Oct 02  
4
Philips Semiconductors  
Product specification  
NPN 8 GHz wideband transistors  
BFG67; BFG67/X; BFG67/XR  
MBB302  
MBB301  
0.8  
handbook, halfpage  
120  
handbook, halfpage  
C
re  
(pF)  
h
FE  
0.6  
80  
0.4  
0.2  
40  
0
0
0
4
8
12  
16  
0
20  
40  
60  
V
(V)  
CB  
I
(mA)  
C
VCE = 5 V.  
IC = ic = 0; f = 1 MHz.  
Fig.4 DC current gain as a function of collector  
current.  
Fig.5 Feedback capacitance as a function of  
collector-base voltage.  
MBB303  
MBB304  
10  
25  
handbook, halfpage  
handbook, halfpage  
f
T
gain  
(dB)  
(GHz)  
MSG  
8
6
4
2
0
20  
G
max  
G
UM  
15  
10  
5
0
0
10  
20  
30  
40  
0
10  
20  
30  
40  
I
(mA)  
C
I
(mA)  
C
VCE = 8 V; f = 1 GHz.  
GUM = maximum unilateral power gain;  
MSG = maximum stable gain;  
VCE = 8 V; Tamb = 25 °; f = 2 GHz.  
Gmax = maximum available gain.  
Fig.6 Transition frequency as a function of  
collector current.  
Fig.7 Gain as a function of collector current.  
1998 Oct 02  
5
Philips Semiconductors  
Product specification  
NPN 8 GHz wideband transistors  
BFG67; BFG67/X; BFG67/XR  
MBB305  
MBB306  
50  
50  
handbook, halfpage  
handbook, halfpage  
gain  
gain  
(dB)  
40  
(dB)  
40  
G
G
UM  
UM  
30  
30  
20  
10  
MSG  
MSG  
20  
G
G
max  
max  
10  
0
0
2
3
4
2
3
4
10  
10  
10  
10  
f (MHz)  
10  
10  
10  
10  
f (MHz)  
VCE = 8 V; IC = 5 mA.  
VCE = 8 V; IC = 15 mA.  
GUM = maximum unilateral power gain;  
MSG = maximum stable gain;  
GUM = maximum unilateral power gain;  
MSG = maximum stable gain;  
Gmax = maximum available gain.  
Gmax = maximum available gain.  
Fig.8 Gain as a function of frequency.  
Fig.9 Gain as a function of frequency.  
MBB307  
MBB308  
50  
4
handbook, halfpage  
gain  
handbook, halfpage  
f = 2 GHz  
F
(dB)  
40  
(dB)  
G
UM  
3
2
1
1 GHz  
900 MHz  
500 MHz  
30  
20  
10  
MSG  
G
max  
0
0
1
2
3
4
10  
10  
10  
10  
10  
100  
f (MHz)  
I
(mA)  
C
VCE = 8 V; IC = 30 mA.  
GUM = maximum unilateral power gain;  
MSG = maximum stable gain;  
VCE = 8 V.  
Gmax = maximum available gain.  
Fig.11 Minimum noise figure as a function of  
collector current.  
Fig.10 Gain as a function of frequency.  
1998 Oct 02  
6
Philips Semiconductors  
Product specification  
NPN 8 GHz wideband transistors  
BFG67; BFG67/X; BFG67/XR  
MBB309  
4
handbook, halfpage  
F
(dB)  
I
= 30 mA  
C
3
2
15 mA  
5 mA  
1
0
10  
2
3
4
10  
10  
f (MHz)  
VCE = 8 V.  
Fig.12 Minimum noise figure as a function of  
frequency.  
BFG67/X  
stability  
circle  
f
VCE  
(V)  
IC  
(mA)  
1
(MHz)  
0.5  
2
500  
8
5
Noise Parameters  
0.2  
Gamma (opt)  
5
Fmin  
(dB)  
F
min  
=0.95 dB  
Rn/50  
0.288  
(mag)  
0.455  
(ang)  
OPT  
10  
+ j  
j  
0.95  
33.8  
0.2  
0.5  
1
2
5
10  
0
1.5 dB  
10  
2 dB  
3 dB  
5
0.2  
2
0.5  
MBB317  
1
ZO = 50 .  
Fig.13 Noise circle figure.  
1998 Oct 02  
7
Philips Semiconductors  
Product specification  
NPN 8 GHz wideband transistors  
BFG67; BFG67/X; BFG67/XR  
BFG67/X  
stability  
circle  
f
VCE  
(V)  
IC  
(mA)  
1
(MHz)  
0.5  
2
1000  
8
5
Noise Parameters  
F
0.2  
=1.3 dB  
Gamma (opt)  
min  
5
Fmin  
(dB)  
Rn/50  
OPT  
(mag)  
(ang)  
65.9  
10  
+ j  
j  
1.3  
0.375  
0.304  
0.2  
0.5  
1
2
5
10  
0
2 dB  
10  
5
3 dB  
4 dB  
0.2  
2
0.5  
MBB316  
1
ZO = 50 .  
Fig.14 Noise circle figure.  
BFG67/X  
1
f
VCE  
(V)  
IC  
(mA)  
(MHz)  
0.5  
2
2000  
8
5
Noise Parameters  
0.2  
5
F
=2.2 dB  
Gamma (opt)  
min  
4 dB  
Fmin  
(dB)  
3 dB  
Rn/50  
OPT  
5 dB  
10  
(mag)  
(ang)  
136.5  
+ j  
0.2  
0.5  
1
2
5
10  
2.2  
0.391  
0.184  
0
G
max  
– j  
Average Gain Parameters  
10  
=12dB  
11 dB  
10 dB  
9 dB  
Gamma (max)  
GMAX  
(dB)  
5
0.2  
8 dB  
(mag)  
0.839  
(ang)  
12  
170  
2
0.5  
MBB315  
1
ZO = 50 .  
Fig.15 Noise circle figure.  
1998 Oct 02  
8
Philips Semiconductors  
Product specification  
NPN 8 GHz wideband transistors  
BFG67; BFG67/X; BFG67/XR  
1
0.5  
2
3 GHz  
0.2  
5
10  
+ j  
0.2  
0.5  
1
2
5
10  
0
j  
10  
40 MHz  
5
0.2  
2
0.5  
MBB314  
1
VCE = 8 V; IC = 15 mA; ZO = 50 .  
Fig.16 Common emitter input reflection coefficient (S11).  
90°  
120°  
60°  
150°  
30°  
40 MHz  
+ϕ  
−ϕ  
3 GHz  
50  
40  
30  
20  
10  
180°  
0°  
30°  
150°  
120°  
60°  
MBB313  
VCE = 8 V; IC = mA; ZO = 50 .  
90°  
Fig.17 Common emitter forward transmission coefficient (S21).  
1998 Oct 02  
9
Philips Semiconductors  
Product specification  
NPN 8 GHz wideband transistors  
BFG67; BFG67/X; BFG67/XR  
1
0.5  
2
0.2  
5
10  
+ j  
0.2  
0.5  
1
2
5
10  
0
40 MHz  
j  
10  
3 GHz  
5
0.2  
2
0.5  
MBB312  
1
VCE = 8 V; IC = 15 mA.  
Fig.18 Common emitter reverse transmission coefficient (S12).  
90°  
120°  
60°  
3 GHz  
150°  
30°  
+ϕ  
−ϕ  
40 MHz  
0.5 0.4  
0.3  
0.2  
0.1  
180°  
0°  
30°  
150°  
60°  
120°  
MBB311  
90°  
VCE = 8 V; IC = 15 mA.  
Fig.19 Common emitter output reflection coefficient (S22).  
1998 Oct 02  
10  
Philips Semiconductors  
Product specification  
NPN 8 GHz wideband transistors  
BFG67; BFG67/X; BFG67/XR  
PACKAGE OUTLINES  
Plastic surface mounted package; 4 leads  
SOT143B  
D
B
E
A
X
y
H
v
M
A
E
e
b
p
w
M
B
4
3
Q
A
A
1
c
1
2
L
p
b
1
e
1
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
max  
UNIT  
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1  
0.9  
0.48  
0.38  
0.88  
0.78  
0.15  
0.09  
3.0  
2.8  
1.4  
1.2  
2.5  
2.1  
0.45  
0.15  
0.55  
0.45  
0.1  
mm  
1.9  
1.7  
0.2  
0.1  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
97-02-28  
SOT143B  
1998 Oct 02  
11  
Philips Semiconductors  
Product specification  
NPN 8 GHz wideband transistors  
BFG67; BFG67/X; BFG67/XR  
Plastic surface mounted package; reverse pinning; 4 leads  
SOT143R  
D
B
E
A
X
y
H
v
M
A
E
e
b
w
M
B
p
3
4
Q
A
A
1
c
2
1
L
p
b
1
e
1
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
max  
UNIT  
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1  
0.9  
0.48  
0.38  
0.88  
0.78  
0.15  
0.09  
3.0  
2.8  
1.4  
1.2  
2.5  
2.1  
0.55  
0.25  
0.45  
0.25  
0.1  
mm  
1.9  
1.7  
0.2  
0.1  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
97-03-10  
SOT143R  
1998 Oct 02  
12  
Philips Semiconductors  
Product specification  
NPN 8 GHz wideband transistors  
BFG67; BFG67/X; BFG67/XR  
DEFINITIONS  
Data Sheet Status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1998 Oct 02  
13  
Philips Semiconductors  
Product specification  
NPN 8 GHz wideband transistors  
BFG67; BFG67/X; BFG67/XR  
NOTES  
1998 Oct 02  
14  
Philips Semiconductors  
Product specification  
NPN 8 GHz wideband transistors  
BFG67; BFG67/X; BFG67/XR  
NOTES  
1998 Oct 02  
15  
Philips Semiconductors – a worldwide company  
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Middle East: see Italy  
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Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,  
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,  
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077  
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421  
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Tel. +1 800 234 7381  
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Uruguay: see South America  
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Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,  
Tel. +381 11 625 344, Fax.+381 11 635 777  
For all other countries apply to: Philips Semiconductors,  
Internet: http://www.semiconductors.philips.com  
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,  
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825  
© Philips Electronics N.V. 1998  
SCA60  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
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under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
125104/00/04/pp16  
Date of release: 1998 Oct 02  
Document order number: 9397 750 04349  

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