BFG67W/X [NXP]
NPN 8 GHz wideband transistor; NPN 8 GHz宽带晶体管
| 型号： | BFG67W/X |
| 厂家： | 
NXP |
| 描述： | NPN 8 GHz wideband transistor |
| 文件： | 总16页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG67W
BFG67W/X; BFG67W/XR
NPN 8 GHz wideband transistor
August 1995
Product specification
File under Discrete Semiconductors, SC14
Philips Semiconductors
Philips Semiconductors
Product specification
BFG67W
BFG67W/X; BFG67W/XR
NPN 8 GHz wideband transistor
FEATURES
MARKING
• High power gain
• Low noise figure
TYPE NUMBER
CODE
BFG67W
V2
V6
V7
page
4
3
2
• Gold metallization ensures
excellent reliability.
BFG67W/X
BFG67W/XR
APPLICATIONS
PINNING
1
They are intended for wideband
applications in the GHz range such as
analog satellite television systems
and portable RF communication
equipment.
Top view
MBK523
PIN
DESCRIPTION
BFG67W (see Fig.1)
1
2
3
4
collector
base
Fig.1 SOT343.
emitter
emitter
DESCRIPTION
NPN silicon planar epitaxial
transistors in plastic, 4-pin
dual-emitter SOT343 and SOT343R
packages.
BFG67W/X (see Fig.1)
3
4
alfpage
1
2
3
4
collector
emitter
base
emitter
2
1
BFG67W/XR (see Fig.2)
Top view
MSB842
1
2
3
4
collector
emitter
base
Fig.2 SOT343R.
emitter
QUICK REFERENCE DATA
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
CONDITIONS
MIN. TYP. MAX. UNIT
VCBO
VCEO
IC
open emitter
open base
−
−
20
10
50
V
−
−
V
−
−
mA
Ptot
hFE
Cre
up to Ts = 85 °C
−
−
500 mW
IC = 15 mA; VCE = 5 V
60
−
100
0.5
7.5
15.5
−
feedback capacitance
transition frequency
IC = 0; VCE = 8 V; f = 1 MHz
−
−
−
pF
fT
IC = 15 mA; VCE = 8 V; f = 500 MHz; Tamb = 25 °C
IC = 15 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C
−
GHz
dB
GUM
maximum unilateral
power gain
−
F
noise figure
Γs = Γopt; IC = 5 mA; VCE = 8 V; f = 2 GHz
−
2.2
−
dB
August 1995
2
Philips Semiconductors
Product specification
BFG67W
BFG67W/X; BFG67W/XR
NPN 8 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
MIN.
MAX.
20
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
V
V
V
open base
10
open collector
2.5
50
mA
mW
°C
Ptot
Tstg
Tj
up to Ts = 85 °C; see Fig.3; note 1
500
+150
175
−65
−
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
VALUE
180
UNIT
K/W
Rth j-s
up to Ts = 85 °C; note 1
Note to the “Limiting values” and “Thermal characteristics”
1. Ts is the temperature at the soldering point of the collector pin.
MBG248
600
handbook, halfpage
P
tot
(mW)
400
200
0
0
50
100
150
200
o
T
( C)
s
Fig.3 Power derating curve.
August 1995
3
Philips Semiconductors
Product specification
BFG67W
BFG67W/X; BFG67W/XR
NPN 8 GHz wideband transistor
CHARACTERISTICS
Tj = 25 °C (unless otherwise specified).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
20
UNIT
V(BR)CBO collector-base breakdown
voltage
open emitter; IC = 10 µA; IE = 0
−
−
−
−
−
−
−
−
V
V(BR)CEO collector-emitter breakdown
voltage
open base; IC = 10 mA; IB = 0
10
V
V(BR)EBO emitter-base breakdown
voltage
open collector; IE = 10 µA; IC = 0
2.5
V
ICBO
hFE
fT
collector cut-off current
DC current gain
open emitter; VCB = 5 V; IE = 0
IC = 15 mA; VCE = 5 V
50
−
nA
60
100
7.5
transition frequency
IC = 15 mA; VCE = 8 V; f = 500 MHz;
−
−
GHz
Tamb = 25 °C
Cc
collector capacitance
emitter capacitance
feedback capacitance
IE = ie = 0; VCE = 8 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCE = 8 V; f = 1 MHz
−
−
−
−
0.7
1.3
−
−
−
−
pF
pF
pF
dB
Ce
Cre
GUM
0.5
maximum unilateral power
gain; note 1
IC = 15 mA; VCE = 8 V; f = 1 GHz;
15.5
Tamb = 25 °C
IC = 15 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 °C
−
−
−
−
10
−
−
−
−
dB
dB
dB
dB
F
noise figure
Γs = Γopt; IC = 5 mA; VCE = 8 V;
f = 1 GHz
1.3
1.7
2.2
Γs = Γopt; IC = 15 mA; VCE = 8 V;
f = 1 GHz
Γs = Γopt; IC = 5 mA; VCE = 8 V;
f = 2 GHz
Note
2
s21
1. GUM is the maximum unilateral power gain, assuming s12 is zero. GUM = 10 log
dB.
------------------------------------------------------------
(1 – s11 2) (1 – s22
)
2
August 1995
4
Philips Semiconductors
Product specification
BFG67W
BFG67W/X; BFG67W/XR
NPN 8 GHz wideband transistor
MBB301
MLB984
1
120
handbook, halfpage
handbook, halfpage
C
re
(pF)
h
FE
0.8
80
0.6
0.4
40
0.2
0
0
0
4
8
12
16
(V)
0
20
40
60
I
(mA)
C
V
CB
VCE = 5 V.
IC = 0; f = 1 MHz.
Fig.4 DC current gain as a function of collector
current; typical values.
Fig.5 Feedback capacitance as a function of
collector-base voltage; typical values.
MLB985
10
handbook, halfpage
f
T
(GHz)
8
6
4
2
0
0
10
20
30
40
I
(mA)
C
f = 2 GHz; VCE = 8 V; Tamb = 25 °C.
Fig.6 Transition frequency as a function of
collector current; typical values.
August 1995
5
Philips Semiconductors
Product specification
BFG67W
BFG67W/X; BFG67W/XR
NPN 8 GHz wideband transistor
MLB987
MLB986
30
50
handbook, halfpage
gain
handbook, halfpage
gain
(dB)
(dB)
40
G
UM
20
MSG
30
20
10
G
max
MSG
G
UM
10
G
max
0
0
0
10
2
3
4
20
30
10
10
10
10
I
(mA)
f (MHz)
C
f = 1 GHz; VCE = 8 V.
IC = 5 mA; VCE = 8 V.
Fig.7 Gain as a function of collector current;
typical values.
Fig.8 Gain as a function of frequency;
typical values.
MLB989
MLB988
50
50
handbook, halfpage
handbook, halfpage
gain
gain
(dB)
(dB)
40
G
UM
40
30
20
10
0
G
UM
MSG
MSG
30
20
10
G
G
max
max
0
2
3
4
2
3
4
10
10
10
10
10
10
10
10
f (MHz)
f (MHz)
IC = 15 mA; VCE = 8 V.
IC = 30 mA; VCE = 8 V.
Fig.9 Gain as a function of frequency;
typical values.
Fig.10 Gain as a function of frequency;
typical values.
August 1995
6
Philips Semiconductors
Product specification
BFG67W
BFG67W/X; BFG67W/XR
NPN 8 GHz wideband transistor
MBB309
MBB308
4
4
handbook, halfpage
handbook, halfpage
f = 2 GHz
F
F
I
= 30 mA
C
(dB)
(dB)
3
2
1
0
3
1 GHz
15 mA
5 mA
900 MHz
500 MHz
2
1
0
2
3
4
1
10
100
10
10
10
I
(mA)
f (MHz)
C
VCE = 8 V.
VCE = 8 V.
Fig.11 Minimum noise figure as a function
of collector current; typical values.
Fig.12 Minimum noise figure as a function of
frequency; typical values.
August 1995
7
Philips Semiconductors
Product specification
BFG67W
BFG67W/X; BFG67W/XR
NPN 8 GHz wideband transistor
o
stability
circle
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
0.2
F
= 0.95 dB
min
5
unstable
region
Γ
opt
0.2
0.5
1
2
5
o
o
180
0
0
F = 1.5 dB
F = 2 dB
F = 3 dB
5
o
0.2
0.5
2
o
45
135
1
MLB990
1.0
o
90
f = 500 MHz; VCE = 8 V; IC = 5 mA; Zo = 50 Ω.
Fig.13 Common emitter noise figure circles; typical values.
stability
o
90
circle
1.0
0.8
0.6
0.4
0.2
0
1
o
o
135
45
2
0.5
F
= 1.30 dB
min
0.2
5
Γ
opt
0.2
0.5
1
2
5
o
o
180
0
0
unstable
region
F = 2 dB
5
0.2
F = 3 dB
F = 4 dB
0.5
2
o
o
45
135
1
MLB991
1.0
o
90
f = 1 GHz; VCE = 8 V; IC = 5 mA; Zo = 50 Ω.
Fig.14 Common emitter noise figure circles; typical values.
8
August 1995
Philips Semiconductors
Product specification
BFG67W
BFG67W/X; BFG67W/XR
NPN 8 GHz wideband transistor
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
F = 5 dB
F = 4 dB
F = 3 dB
= 2.20 dB
F
min
0.2
5
Γ
opt
0.2
G
0.5
= 10.4 dB
1
2
5
o
o
180
0
0
max
G = 10 dB
5
o
0.2
G = 9 dB
0.5
2
o
45
135
1
MLB992
1.0
o
90
f = 2 GHz; VCE = 8 V; IC = 5 mA; Zo = 50 Ω.
Fig.15 Common emitter noise figure circles; typical values.
August 1995
9
Philips Semiconductors
Product specification
BFG67W
BFG67W/X; BFG67W/XR
NPN 8 GHz wideband transistor
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
0.2
5
3 GHz
0.2
0.5
1
2
5
o
o
180
0
0
40 MHz
5
o
0.2
0.5
2
o
45
135
1
MLB993
1.0
o
90
VCE = 8 V; IC = 15 mA; Zo = 50 Ω.
Fig.16 Common emitter input reflection coefficient (s11); typical values.
o
90
o
o
135
45
40 MHz
40
3 GHz
o
o
180
0
50
30
20
10
o
o
135
45
o
MLB994
90
VCE = 8 V; IC = 15 mA.
Fig.17 Common emitter forward transmission coefficient (s21); typical values.
10
August 1995
Philips Semiconductors
Product specification
BFG67W
BFG67W/X; BFG67W/XR
NPN 8 GHz wideband transistor
o
90
3 GHz
o
o
135
45
40 MHz
o
o
180
0
0.25 0.20 0.15 0.10 0.05
o
o
135
45
o
MLB995
90
VCE = 8 V; IC = 15 mA.
Fig.18 Common emitter reverse transmission coefficient (s12); typical values.
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
0.2
5
0.2
0.5
1
2
5
o
o
180
0
0
40 MHz
5
o
0.2
3 GHz
0.5
2
o
45
135
1
MLB996
1.0
o
90
VCE = 8 V; IC = 15 mA; Zo = 50 Ω.
Fig.19 Common emitter output reflection coefficient (s22); typical values.
11
August 1995
Philips Semiconductors
Product specification
BFG67W
BFG67W/X; BFG67W/XR
NPN 8 GHz wideband transistor
SPICE parameters for the BFG67W crystal
SEQUENCE No. PARAMETER VALUE
UNIT
SEQUENCE No. PARAMETER VALUE
UNIT
mV
36(1)
37(1)
38
VJS
MJS
FC
750.0
0.000
0.870
1
IS
556.4
170.0
0.995
48.03
918.1
10.47
1.479
142.1
0.994
2.555
9.632
438.2
1.089
10.00
1.000
10.00
655.9
2.000
0.000
1.110
3.000
1.137
600.0
0.249
11.97
25.99
1.223
197.3
10.03
515.9
155.8
56.02
130.0
1.877
0.000
aA
−
2
BF
−
−
3
NF
−
4
VAF
IKF
ISE
NE
V
Note
5
mA
fA
−
1. These parameters have not been extracted, the
default values are shown.
6
7
8
BR
−
C
9
NR
−
handbook, halfpage
cb
10
11
12
13
14
15
16
17
18
19(1)
20(1)
21(1)
22
23
24
25
26
27
28
29
30
31
32
33
34
35(1)
VAR
IKR
ISC
NC
V
A
L
B
L1
L2
aA
−
B
B'
C'
C
E'
C
C
be
ce
RB
Ω
L
E
IRB
RBM
RE
µA
Ω
MBC964
mΩ
Ω
L3
RC
E
XTB
EG
−
eV
−
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc);
fc = scaling frequency = 1 GHz.
XTI
CJE
VJE
MJE
TF
pF
mV
−
Fig.20 Package equivalent circuit SOT343;
SOT343R.
ps
−
List of components (see Fig.20)
XTF
VTF
ITF
DESIGNATION
VALUE
UNIT
V
mA
deg
fF
mV
−
Cbe
Ccb
Cce
L1
70
fF
PTF
CJC
VJC
MJC
XCJC
TR
50
fF
115
fF
0.34
0.10
0.25
0.40
0.40
nH
nH
nH
nH
nH
L2
−
L3
ns
F
LB
CJS
LE
August 1995
12
Philips Semiconductors
Product specification
BFG67W
BFG67W/X; BFG67W/XR
NPN 8 GHz wideband transistor
PACKAGE OUTLINES
1.00
max
0.4
0.2
0.2
A
0.2
B
M
M
0.1
max
0.2
4
3
A
2.2
2.0
1.35
1.15
0.3
0.1
1
2
0.25
0.10
0.7
0.5
1.4
1.2
2.2
1.8
B
MSB374
Dimensions in mm.
Fig.21 SOT343.
1.00
max
0.1
max
0.4
B
0.2
A
0.2
M
M
0.2
0.2
3
4
A
1.35
1.15
2.2
2.0
0.3
0.1
2
1
0.25
0.10
0.7
0.5
1.4
1.2
2.2
1.8
B
MSB367
Dimensions in mm.
Fig.22 SOT343R.
13
August 1995
Philips Semiconductors
Product specification
BFG67W
BFG67W/X; BFG67W/XR
NPN 8 GHz wideband transistor
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
August 1995
14
Philips Semiconductors
Product specification
BFG67W
BFG67W/X; BFG67W/XR
NPN 8 GHz wideband transistor
NOTES
August 1995
15
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SCD34
© Philips Electronics N.V. 1994
Tel. (03)3740 5028, Fax. (03)3740 0580
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123065/1500/01/pp16
Date of release: August 1995
9397 739 20011
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