BFQ131 [NXP]
NPN video transistor; NPN晶体管视频
| 型号： | BFQ131 |
| 厂家： | 
NXP |
| 描述： | NPN video transistor |
| 文件： | 总6页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ131
NPN video transistor
1995 Sep 26
Product specification
File under Discrete Semiconductors, SC05
Philips Semiconductors
Product specification
NPN video transistor
BFQ131
FEATURES
DESCRIPTION
• Low output capacitance
• High dissipation
NPN silicon transistor in a 3-lead
plastic SOT54 package.
1
2
3
• High gain bandwidth product.
PINNING
MSB033
APPLICATIONS
PIN
1
DESCRIPTION
base
• Buffer stage in colour monitors
between the video amplifier and the
input of the video module
2
collector
emitter
Fig.1 Simplified outline SOT54.
3
• Pre-stage (cascode driver) in
discrete video amplifiers.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
18
UNIT
VCEO
IC
collector-emitter voltage
collector current (DC)
total power dissipation
transition frequency
feedback capacitance
junction temperature
open base
−
−
−
4
V
150
1.9
−
mA
W
Ptot
fT
up to Ts = 60 °C; see Fig.2
IC = 100 mA; VCE = 10 V; see Fig.4
IC = 0; VCE = 10 V; see Fig.5
GHz
pF
Cre
Tj
1.2
−
−
175
°C
1995 Sep 26
2
Philips Semiconductors
Product specification
NPN video transistor
BFQ131
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
MIN.
MAX.
25
UNIT
−
−
−
−
−
V
V
V
open base
18
open collector
2
150
1.9
+150
175
mA
W
Ptot
up to Ts = 60 °C; note 1; see Fig.2
Tstg
−65
°C
°C
Tj
−
Note
1. Ts = the temperature at the soldering point of the collector pin.
MBG315
2
handbook, halfpage
P
tot
(W)
1.5
1
0.5
0
0
50
100
150
200
o
T
( C)
s
Fig.2 Power derating curve.
1995 Sep 26
3
Philips Semiconductors
Product specification
NPN video transistor
BFQ131
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
60
UNIT
Rth j-s
thermal resistance from junction to up to Ts = 60 °C; note 1; Ptot = 1.9 W
K/W
soldering point
Note
1. Ts = the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
V(BR)CBO collector-base breakdown voltage
V(BR)CEO collector-emitter breakdown voltage IC = 0.1 mA; IB = 0
PARAMETER
CONDITIONS
MIN.
25
TYP.
MAX.
UNIT
IC = 0.1 mA; IE = 0
−
−
−
−
−
V
18
2
−
−
1
−
V
V(BR)EBO emitter-base breakdown voltage
IE = 0.1 mA; IC = 0
VCE = 18 V; VBE = 0
V
ICES
hFE
collector-emitter cut-off current
DC current gain
−
µA
IC = 25 mA; VCE = 10 V;
see Fig.3
25
fT
transition frequency
IC = 100 mA; VCE = 10 V;
f = 500 MHz; see Fig.4
−
−
4
−
−
GHz
pF
Cre
feedback capacitance
IC = 0; VCE = 10 V; f = 1 MHz;
see Fig.5
1.2
1995 Sep 26
4
Philips Semiconductors
Product specification
NPN video transistor
BFQ131
MBB361
MBG317
6
120
handbook, halfpage
handbook, halfpage
f
T
h
FE
(MHz)
4
80
2
40
0
0
0
50
100
150
200
0
40
80
120
160
(mA)
I
(mA)
I
C
C
VCE = 10 V; Tj = 25 °C.
VCE = 10 V; f = 500 MHz; Tj = 25 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.4 Transition frequency as a function of
collector current; typical values.
MBG316
2
handbook, halfpage
C
re
(pF)
1.5
1
0.5
0
0
4
8
12
16
V
20
(V)
CE
f = 1 MHz; IC = 0; Tj = 25°C.
Fig.5 Feedback capacitance as a function of
collector-emitter voltage; typical values.
1995 Sep 26
5
Philips Semiconductors
Product specification
NPN video transistor
BFQ131
PACKAGE OUTLINE
0.40
min
4.2 max
1.6
5.2 max
12.7 min
0.48
0.40
1
4.8
max
2.54
2
3
0.66
0.56
(1)
MBC014 - 1
2.0 max
Dimensions in mm.
Fig.6 SOT54.
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Sep 26
6
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