BFQ166T/R [NXP]

TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP RF Small Signal;
BFQ166T/R
型号: BFQ166T/R
厂家: NXP    NXP
描述:

TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP RF Small Signal

文件: 总8页 (文件大小:55K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
BFQ166  
NPN video transistor  
Product specification  
1997 Oct 02  
Supersedes data of November 1995  
File under Discrete Semiconductors, SC05  
Philips Semiconductors  
Product specification  
NPN video transistor  
BFQ166  
FEATURES  
DESCRIPTION  
page  
4
Low output capacitance  
High gain bandwidth  
Good thermal stability  
NPN video transistor in a SOT223  
plastic package.  
PINNING  
Gold metallization ensures  
excellent reliability  
PIN  
DESCRIPTION  
emitter  
High current applicability  
Surface mounting.  
1
2
3
4
base  
1
2
3
emitter  
collector  
MSB002 - 1  
Top view  
APPLICATIONS  
Fig.1 Simplified outline  
(SOT223).  
Video amplifier cascode driver in  
high-resolution colour graphics  
monitors.  
QUICK REFERENCE DATA  
SYMBOL  
PARAMETER  
collector-base voltage  
collector-emitter voltage  
collector current (DC)  
total power dissipation  
DC current gain  
CONDITIONS  
MIN.  
TYP. MAX. UNIT  
VCBO  
VCER  
IC  
open emitter  
20  
19  
500  
2
V
RBE = 100 Ω  
V
mA  
W
Ptot  
hFE  
fT  
Ts 105 °C; note 1  
IC = 300 mA; VCE = 5 V; see Fig.4  
IC = 300 mA; VCE = 5 V; f = 100 MHz;  
50  
1
60  
transition frequency  
GHz  
T
amb = 25 °C  
Note  
1. Ts is the temperature at the soldering point of the collector lead.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN. MAX. UNIT  
VCBO  
VCEO  
VCER  
VEBO  
IC  
collector-base voltage  
collector-emitter voltage  
collector-emitter voltage  
emitter-base voltage  
collector current (DC)  
total power dissipation  
storage temperature  
junction temperature  
open emitter  
open base  
20  
10  
19  
3
V
V
RBE = 100 Ω  
open collector  
V
V
500  
2
mA  
W
Ptot  
Ts 105 °C; note 1; see Fig.3  
Tstg  
Tj  
65  
+150 °C  
175 °C  
Note  
1. Ts is the temperature at the soldering point of the collector lead.  
1997 Oct 02  
2
Philips Semiconductors  
Product specification  
NPN video transistor  
BFQ166  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Rth j-s  
thermal resistance from junction to soldering point Ts = 105 °C; Ptot = 2 W;  
35  
K/W  
notes 1 and 2  
Notes  
1. Ts is the temperature at the soldering point of the collector lead.  
2. Device mounted on a printed-circuit board measuring 40 × 40 × 1 mm (collector pad 35 × 17 mm).  
CHARACTERISTICS  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
IC = 5 mA; IE = 0  
MIN. TYP. MAX. UNIT  
V(BR)CBO collector-base breakdown voltage  
V(BR)CER collector-emitter breakdown voltage  
V(BR)CEO collector-emitter breakdown voltage  
20  
19  
10  
V
IC = 10 mA; RBE = 100 Ω  
IC = 10 mA; IB = 0  
V
V
ICES  
hFE  
Cc  
collector-emitter cut-off current  
DC current gain  
VCE = 10 V; VBE = 0  
100  
µA  
IC = 300 mA; VCE = 5 V; see Fig.4 50  
60  
4.5  
3.2  
collector capacitance  
IE = ie = 0; VCB = 5 V; f = 1 MHz  
pF  
pF  
Ccb  
collector-base capacitance  
IC = ic = 0; VCB = 5 V; f = 1 MHz;  
see Fig.6  
fT  
transition frequency  
IC = 300 mA; VCE = 5 V;  
f = 100 MHz; Tamb = 25 °C;  
see Fig.5  
1
GHz  
1997 Oct 02  
3
Philips Semiconductors  
Product specification  
NPN video transistor  
BFQ166  
MRA601  
MRA600  
3
600  
handbook, halfpage  
handbook, halfpage  
P
tot  
I
C
(W)  
(mA)  
2
400  
1
200  
0
0
0
50  
100  
150  
200  
0
5
10  
15  
20  
o
T
( C)  
V
(V)  
s
CER  
RBE 100 .  
Fig.2 DC SOAR.  
Fig.3 Power derating curve.  
MBB436  
MBB435  
80  
3
handbook, halfpage  
handbook, halfpage  
h
f
FE  
T
(GHz)  
70  
60  
50  
2
1
40  
0
0
0
200  
400  
600  
100  
200  
300  
I
(mA)  
I
(mA)  
C
C
VCE = 5 V.  
VCE = 5 V; Tamb = 25 °C.  
Fig.4 DC current gain as a function of  
collector current; typical values.  
Fig.5 Transition frequency as a function of  
collector current; typical values.  
1997 Oct 02  
4
Philips Semiconductors  
Product specification  
NPN video transistor  
BFQ166  
MRA599  
10  
handbook, halfpage  
C
cb  
(pF)  
8
6
4
2
0
0
4
8
12  
16  
V
20  
(V)  
CB  
IC = 0; f = 1 MHz.  
Fig.6 Collector-base capacitance as a function of  
collector-base voltage; typical values.  
1997 Oct 02  
5
Philips Semiconductors  
Product specification  
NPN video transistor  
BFQ166  
PACKAGE OUTLINE  
Plastic surface mounted package; collector pad for good heat transfer; 4 leads  
SOT223  
D
B
E
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X  
1
e
0
2
4 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
UNIT  
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
1
E
1.8  
1.5  
0.10 0.80  
0.01 0.60  
3.1  
2.9  
0.32  
0.22  
6.7  
6.3  
3.7  
3.3  
7.3  
6.7  
1.1  
0.7  
0.95  
0.85  
mm  
4.6  
2.3  
0.2  
0.1  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
96-11-11  
97-02-28  
SOT223  
1997 Oct 02  
6
Philips Semiconductors  
Product specification  
NPN video transistor  
BFQ166  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1997 Oct 02  
7
Philips Semiconductors – a worldwide company  
Argentina: see South America  
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,  
Tel. +31 40 27 82785, Fax. +31 40 27 88399  
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,  
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466  
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,  
Tel. +64 9 849 4160, Fax. +64 9 849 7811  
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,  
Fax. +43 160 101 1210  
Norway: Box 1, Manglerud 0612, OSLO,  
Tel. +47 22 74 8000, Fax. +47 22 74 8341  
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,  
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773  
Philippines: Philips Semiconductors Philippines Inc.,  
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,  
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474  
Belgium: see The Netherlands  
Brazil: see South America  
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,  
Tel. +48 22 612 2831, Fax. +48 22 612 2327  
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,  
51 James Bourchier Blvd., 1407 SOFIA,  
Tel. +359 2 689 211, Fax. +359 2 689 102  
Portugal: see Spain  
Romania: see Italy  
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,  
Tel. +1 800 234 7381  
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,  
Tel. +7 095 755 6918, Fax. +7 095 755 6919  
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,  
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,  
Tel. +852 2319 7888, Fax. +852 2319 7700  
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,  
Tel. +65 350 2538, Fax. +65 251 6500  
Colombia: see South America  
Czech Republic: see Austria  
Slovakia: see Austria  
Slovenia: see Italy  
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,  
Tel. +45 32 88 2636, Fax. +45 31 57 0044  
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,  
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,  
Tel. +27 11 470 5911, Fax. +27 11 470 5494  
Finland: Sinikalliontie 3, FIN-02630 ESPOO,  
Tel. +358 9 615800, Fax. +358 9 61580920  
South America: Rua do Rocio 220, 5th floor, Suite 51,  
04552-903 São Paulo, SÃO PAULO - SP, Brazil,  
Tel. +55 11 821 2333, Fax. +55 11 829 1849  
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,  
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427  
Spain: Balmes 22, 08007 BARCELONA,  
Tel. +34 3 301 6312, Fax. +34 3 301 4107  
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,  
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300  
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,  
Tel. +46 8 632 2000, Fax. +46 8 632 2745  
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,  
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240  
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,  
Tel. +41 1 488 2686, Fax. +41 1 481 7730  
Hungary: see Austria  
India: Philips INDIA Ltd, Band Box Building, 2nd floor,  
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,  
Tel. +91 22 493 8541, Fax. +91 22 493 0966  
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,  
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874  
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,  
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,  
Tel. +66 2 745 4090, Fax. +66 2 398 0793  
Indonesia: see Singapore  
Ireland: Newstead, Clonskeagh, DUBLIN 14,  
Tel. +353 1 7640 000, Fax. +353 1 7640 200  
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,  
Tel. +90 212 279 2770, Fax. +90 212 282 6707  
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,  
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007  
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,  
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461  
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,  
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557  
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,  
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421  
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,  
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077  
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,  
Tel. +1 800 234 7381  
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,  
Tel. +82 2 709 1412, Fax. +82 2 709 1415  
Uruguay: see South America  
Vietnam: see Singapore  
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,  
Tel. +60 3 750 5214, Fax. +60 3 757 4880  
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,  
Tel. +381 11 625 344, Fax.+381 11 635 777  
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,  
Tel. +9-5 800 234 7381  
Middle East: see Italy  
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,  
Internet: http://www.semiconductors.philips.com  
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825  
© Philips Electronics N.V. 1997  
SCA55  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
127027/00/02/pp8  
Date of release: 1997 Oct 02  
Document order number: 9397 750 02871  

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