BFQ18ATRL [NXP]
TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal;型号: | BFQ18ATRL |
厂家: | NXP |
描述: | TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal |
文件: | 总130页 (文件大小:9375K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RF Manual 16th edition
Application and design manual
for High Performance RF products
June 2012
NXP enables you to unleash the performance
of next-generation RF and microwave designs
NXP's RF Manual is one of the most important reference tools on the market for today’s
RF designers. It features our complete range of RF products, from low- to high-power signal
conditioning, organized by application and function, and with a focus on design-in support.
When it comes to RF, the first thing on the designer's mind is to meet the
specified performance. NXP brings clarity to every aspect of your design
challenge, so you can unleash the performance of your RF and microwave
designs. NXP delivers a portfolio of high-performance RF technology that
allows you to differentiate your product – no matter where in the RF world
you are. That’s why customers trust us with their mission-critical designs.
Whether it’s LDMOS and GaN for high-power RF applications or Si and
SiGe:C BiCMOS for your small-signal needs, we’ve got you covered.
Our broad portfolio of far-reaching technologies gives you the freedom
to design with confidence.
Shipping more than four billion RF products annually, NXP is a clear industry
leader in High Performance RF. From satellite receivers, cellular base
stations, and broadcast transmitters to ISM (industrial, scientific, medical)
and aerospace and defense applications, you will find the High Performance
RF products that will help you realize a clear advantage in your products,
your reputation, and your business.
So if you're looking to improve your RF performance, design a highly
efficient signal chain, or break new ground with an innovative ISM
application, NXP will help you unleash the performance of your
next-generation RF and microwave designs.
4
NXP Semiconductors RF Manual 16th edition
What’s new?
This RF Manual provides updated information on RF applications that are
grouped as follows: wireless and broadband communication infrastructure, TV
and satellite, portable devices, automotive, ISM, and aerospace and defense.
We describe in detail the new developments in our core technologies, QUBiC4
(SiGe:C) and LDMOS. We have also added GaN technology to our product
offering; this key technology lets high-power amplifiers deliver very high
efficiency in next-generation wireless communication systems.
New products include GaN power amplifiers, a complete line of overmolded
plastic (OMP) RF power transistors and MMICs, and our eighth generation
LDMOS transistors (Gen8). Next-generation devices and improved products
include GPS LNAs, medium power amplifiers, IF gain blocks, satellite LNB ICs
and CATV modules.
Our portfolio for the wireless communication infrastructure has expanded, with
a comprehensive set of amplifiers (low noise, variable gain, medium power, and
high power Doherty amplifiers), mixers, IQ modulators and synthesizers, so you
can build a highly efficient signal chain for transmit line-ups and receive chains.
The Design Support section is updated and includes all available tools,
documents, materials and links that ease the design-in of our products.
We’re relentless in our commitment to RF innovation, and have the infrastructure and insight to inspire confidence
in your performance-critical applications. We bring focus to complex RF problems so you are free to push the
performance limits of your application, realize your design vision, and gain a competitive edge for your enterprise.
th
What you are reading is more than a guide, it's a tool that lets you unleash your RF performance: the 16 edition
of the RF Manual.
Kind regards,
John Croteau
Sr. Vice President & General Manager
Business Line High Performance RF
RF Manual web page
www.nxp.com/rfmanual
NXP Semiconductors RF Manual 16th edition
5
Contents
1
Products by application
9
1.1 Wireless communication infrastructure_______________________________________________________________________________________________________________________________________________________________
9
1.1.1 Base stations (all cellular standards and frequencies) ______________________________________________________________________________________________________________________________
9
1.1.2 Point-to-point communications________________________________________________________________________________________________________________________________________________________________12
1.1.3 Repeater___________________________________________________________________________________________________________________________________________________________________________________________________14
1.2 Broadband communication infrastructure _________________________________________________________________________________________________________________________________________________________15
1.2.1 CATV optical (optical node with multiple out-ports)________________________________________________________________________________________________________________________________15
1.2.2 CATV electrical (line extenders) ______________________________________________________________________________________________________________________________________________________________16
1.3 TV and satellite____________________________________________________________________________________________________________________________________________________________________________________________________17
1.3.1 Network interface module (NIM) for TV reception___________________________________________________________________________________________________________________________________17
1.3.2 Basic TV tuner___________________________________________________________________________________________________________________________________________________________________________________________19
1.3.3 Satellite outdoor unit, twin low-noise block (LNB) with discrete components ______________________________________________________________________________________ 20
1.3.4 Satellite outdoor unit, twin low-noise block (LNB) with integrated mixer / oscillator / downconverter __________________________________________________21
1.3.5 Satellite multi-switch box - 4 x 4 (up to 16 x 16) / DiSEqC / SMATV________________________________________________________________________________________________________ 22
1.3.6 VSAT ________________________________________________________________________________________________________________________________________________________________________________________________________ 23
1.4 Portable devices_________________________________________________________________________________________________________________________________________________________________________________________________ 25
1.4.1 GPS__________________________________________________________________________________________________________________________________________________________________________________________________________ 25
1.4.2 FM radio ___________________________________________________________________________________________________________________________________________________________________________________________________26
1.4.3 China Mobile Multimedia Broadcasting (CMMB) in UHF band 470 – 862 MHz _______________________________________________________________________________________27
1.4.4 Cellular receiver________________________________________________________________________________________________________________________________________________________________________________________28
1.4.5 802.11n DBDC and 802.11ac WLAN ________________________________________________________________________________________________________________________________________________________ 29
1.4.6 Generic RF front-end_______________________________________________________________________________________________________________________________________________________________________________ 30
1.5 Automotive__________________________________________________________________________________________________________________________________________________________________________________________________________31
1.5.1 SDARS & HD radio______________________________________________________________________________________________________________________________________________________________________________________31
1.5.2 Remote keyless entry, RF generic front-end with dedicated antenna for reception and transmission ___________________________________________________32
1.5.3 Tire pressure monitoring system_____________________________________________________________________________________________________________________________________________________________ 33
1.5.4 Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL) _______________________________________________________________________________________________________________________ 34
1.6 Industrial, scientific & medical (ISM)__________________________________________________________________________________________________________________________________________________________________ 35
1.6.1 Broadcast / ISM _______________________________________________________________________________________________________________________________________________________________________________________ 35
1.6.2 E-metering, RF generic front-end with a single antenna / ZigBee______________________________________________________________________________________________________________36
1.6.3 RF microwave furnace application____________________________________________________________________________________________________________________________________________________________37
1.6.4 RF plasma lighting___________________________________________________________________________________________________________________________________________________________________________________ 38
1.6.5 Medical imaging_______________________________________________________________________________________________________________________________________________________________________________________39
1.7
Aerospace and defense __________________________________________________________________________________________________________________________________________________________________________ 40
1.7.1 Microwave products for L- and S-band radar and avionics applications ________________________________________________________________________________________________ 40
2
Focus applications, products & technologies
42
2.1 Wireless communication infrastructure_____________________________________________________________________________________________________________________________________________________________ 42
2.1.1 Build a highly efficient signal chain with RF components for transmit line-ups and receive chains ________________________________________________________42
2.1.2 Digital wideband VGAs with high linearity & flexible current settings ___________________________________________________________________________________________________ 44
2.1.3 Doherty amplifier technology for state-of-the-art wireless infrastructure______________________________________________________________________________________________ 46
2.1.4 The new generation of LDMOS RF power for wireless infrastructures: NXP's Gen8 _____________________________________________________________________________ 48
2.2 Broadband communication infrastructure ________________________________________________________________________________________________________________________________________________________ 49
2.2.1 Connecting people, protecting your network: NXP's CATV C-family for the Chinese SARFT standard_________________________________________________49
2.2.2 Highly efficient line-up of 1 GHz GaAs modules for sustainable CATV networks ___________________________________________________________________________________52
2.3 TV and satellite___________________________________________________________________________________________________________________________________________________________________________________________________ 54
2. 3.1 LNAs with programmable gain & bypass option for improved tuner performance _______________________________________________________________________________ 54
2.3.2 Complete satellite portfolio for all LNB architectures_____________________________________________________________________________________________________________________________ 56
2.3.3 VSAT, 2-way communication via satellite_________________________________________________________________________________________________________________________________________________ 58
2.3.4 Low noise LO generators for microwave & mmWave radios___________________________________________________________________________________________________________________ 60
2.4 Portable devices__________________________________________________________________________________________________________________________________________________________________________________________________61
2. 4.1 The best reception of GNSS signals with the smallest footprint______________________________________________________________________________________________________________61
2.5 Industrial, scientific & medical___________________________________________________________________________________________________________________________________________________________________________ 63
2. 5.1 Medical applications driven by RF power________________________________________________________________________________________________________________________________________________ 63
2.5.2 RF-driven plasma lighting________________________________________________________________________________________________________________________________________________________________________ 64
2.5.3 QUBiC4 Si and SiGe:C transistors for any RF function____________________________________________________________________________________________________________________________ 65
2.5.4 Building on decades of innovation in microwave and radar ___________________________________________________________________________________________________________________ 66
2.5.5 Digital broadcasting at its best_______________________________________________________________________________________________________________________________________________________________ 68
2.5.6 Setting the benchmark for ultra low-power and high-performance wireless connectivity solutions ______________________________________________________69
2.6 Technology__________________________________________________________________________________________________________________________________________________________________________________________________________70
2. 6.1 The first mainstream semiconductor company to offer GaN products ___________________________________________________________________________________________________70
6
NXP Semiconductors RF Manual 16th edition
2.6.2 Completing NXP's RF power transistor offering: products in plastic packages (OMP) ___________________________________________________________________________71
2.6.3 Looking for a leader in SiGe:C? You just found us! __________________________________________________________________________________________________________________________________72
2.6.4 High-performance, small-size packaging enabled by NXP's leadless package platform and WL-CSP technology________________________________74
3
Products by function
75
3.1 New products______________________________________________________________________________________________________________________________________________________________________________________________________75
3.2 RF diodes ____________________________________________________________________________________________________________________ 78
3.2.1 Varicap diodes _________________________________________________________________________________________________________________________________________________________________________________________78
3.2.2 PIN diodes _______________________________________________________________________________________________________________________________________________________________________________________________79
3.2.3 Band-switch diodes__________________________________________________________________________________________________________________________________________________________________________________81
3.2.4 Schottky diodes________________________________________________________________________________________________________________________________________________________________________________________81
3.3 RF Bipolar transistors ________________________________________________________________________________________________________________________________________________________________________________________ 82
3.3.1 Wideband transistors ______________________________________________________________________________________________________________________________________________________________________________ 82
3.4 RF ICs _________________________________________________________________________________________________________________________________________________________________________________________________________________ 85
3.4.1 RF MMIC amplifiers and mixers_______________________________________________________________________________________________________________________________________________________________ 85
3.4.2 Wireless infrastructures ICs_____________________________________________________________________________________________________________________________________________________________________ 88
3.4.3 Satellite LNB RF ICs_________________________________________________________________________________________________________________________________________________________________________________ 89
3.4.4 Low-noise LO generators for VSAT and general microwave applications ______________________________________________________________________________________________ 89
3.5 RF MOS transistors ____________________________________________________________________________________________________________________________________________________________________________________________ 90
3.5.1 JFETs _______________________________________________________________________________________________________________________________________________________________________________________________________ 90
3.5.2 MOSFETs __________________________________________________________________________________________________________________________________________________________________________________________________91
3.6 RF Modules ________________________________________________________________________________________________________________________________________________________________________________________________________ 93
3.6.1 CATV push-pulls ______________________________________________________________________________________________________________________________________________________________________________________93
3.6.2 CATV push-pulls 1 GHz ____________________________________________________________________________________________________________________________________________________________________________93
3.6.3 CATV power doublers ______________________________________________________________________________________________________________________________________________________________________________94
3.6.4 CATV optical receivers _____________________________________________________________________________________________________________________________________________________________________________94
3.6.5 CATV reverse hybrids_______________________________________________________________________________________________________________________________________________________________________________94
3.7 RF power transistors __________________________________________________________________________________________________________________________________________________________________________________________ 95
3.7.1 RF power transistors for base stations ____________________________________________________________________________________________________________________________________________________95
3.7.2 RF power transistors for broadcast / ISM applications____________________________________________________________________________________________________________________________ 99
3.7.3 RF power transistors for aerospace and defense__________________________________________________________________________________________________________________________________ 100
3.7.4 Gallium Nitride (GaN) RF power amplifiers____________________________________________________________________________________________________________________________________________101
3.8 Wireless microcontroller chipsets and modules ______________________________________________________________________________________________________________________________________________101
4
Design support
102
4.1 Knowing NXP’s RF portfolio_____________________________________________________________________________________________________________________________________________________________________________102
4.2 Product selection on NXP.com _________________________________________________________________________________________________________________________________________________________________________102
4.3 Product evaluation____________________________________________________________________________________________________________________________________________________________________________________________102
4.4 Additional design-in support____________________________________________________________________________________________________________________________________________________________________________103
4.5 Application notes______________________________________________________________________________________________________________________________________________________________________________________________103
4.6 Simulation models_____________________________________________________________________________________________________________________________________________________________________________________________104
4.6.1 Simulation models for RF power devices _______________________________________________________________________________________________________________________________________________104
4.6.2 Simulation models for RF bipolar wideband transistors_________________________________________________________________________________________________________________________105
4.6.3 Simulation models for RF MOSFET transistors_______________________________________________________________________________________________________________________________________106
4.6.4 Simulation models for RF varicap diodes_______________________________________________________________________________________________________________________________________________106
4.6.5 Simulation models for RF MMIC amplifiers____________________________________________________________________________________________________________________________________________107
5
Cross-references & replacements_______________________________________________________108
5.1 Cross-references: manufacturer types versus NXP types______________________________________________________________________________________________________________________________ 108
5.2 Cross-references: NXP discontinued types versus NXP replacement types__________________________________________________________________________________________________ 117
6
Packing quantities per package with relevant ordering code _____________________________119
6.1 Packing quantities per package with relevant ordering code_________________________________________________________________________________________________________________________ 119
6.2 Marking codes___________________________________________________________________________________________________________________________________________________________________________________________________122
7
8
9
Abbreviations_________________________________________________________________________124
Contacts and web links ________________________________________________________________125
Product index_________________________________________________________________________126
NXP Semiconductors RF Manual 16th edition
7
8
NXP Semiconductors RF Manual 16th edition
1. Products by application
1.1 Wireless communication infrastructure
1.1.1 Base stations (all cellular standards and frequencies)
See also brochure: 'Your partner in Mobile Communication Infrastructure design', NXP document number 9397 750 16837.
Application diagram
IQ-Modulator
Power Amplifier
I
DVGA RF-BP
MPA
HPA
PLL
VCO
Dual
DAC
0
90
Transmitter
Mixer+LO
Q
IF-SAW
DVGA
Digital
Front
End
Tower -
Mounted
Amplifier
JEDEC
IF
Att.
ADC
TX / RX1
Tx
DPD
CFR
DUC
DDC
LO
LNA +VGA
RF-SAW
Rx
µC
RX2
Dual
DVGA
PLL
VCO
Dual
ADC
Dual
Mixer
BP or LP
IF-SAW
LNA
Filter Unit
LNA+VGA
Clock
Generator
Jitter Cleaner
Data Converter
RF Small Signal
RF Power
Micro Controller
The block diagram above shows transmit (upper part, Tx) and receive (lower part, Rx) functions of a base station, and includes the Tx feedback function (middle part, Tx feedback).
The signals generated in the "Digital Baseband & Control" block follow the requirements of the air-interface standard. These signals are interfaced to the DAC via
serial interface SER. The SER can use the LVDS or JEDEC standard. After the signals are fed to the I-DAC and Q-DAC, they are converted to the analog domain.
Before the I and Q signals enter the IQ modulator, they are first low-pass filtered to remove any aliasing signals. At the IQ modulator, the signals are up-converted to
RF using an LO signal coming from the PLL/VCO device, typically called the LO generator. Due to device aging and variation in cell load, the up-converted signals
are fed to the VGA to control the power level. An additional band-pass filter is needed to remove the out-of-band spurs. The clean signal is fed to the RF power
board, where the desired transmit power is made. Finally, the RF power signal is fed to the antenna via a duplexer.
Directly after the final-stage amplifier, a signal coupler picks up a certain amount of the RF signal, which is attenuated and then down-mixed using the IF mixer.
This signal is called the observation signal, and is used to derive coefficients for the digital pre-distortion algorithm. Since power levels vary, the observation is first
fed to the VGA to control the power level, and after band-pass filtering, the signal is converted to the digital domain using an ADC. The same serial interface is used
to send the digital signals to the baseband processor.
At the receiver, the received signal directly after the duplexer is fed to the LNA for direct amplification, since the received signal level is quite low. If the first LNA
is mounted in the tower top, a long RF cable is used to interface the RF signals with a base transceiver station (BTS). A second LNA is used to amplify the received
signals. Band-pass filtering is applied to reduce the out-of-band signals levels before these signals are applied to the IF mixer. Signal levels that change dramatically
require a VGA to maintain the full scale ranges of the I-ADC and Q-ADC for optimal conversion performance. Low-pass filtering is used before the ADC to remove
the aliasing signals. These digital signals are interfaced to the baseband using a serial interface such as JEDEC.
The sample clocks and LO signals are derived from clock cleaners and PLLs respectively. This is denoted as Clock and PLL / VCO in the block diagram. This set-up
is required to make a synchronized system. Typically denoted in SNRs, and in order to improve reception quality, the receive function is equipped with a second
receiver, called a diversity receiver.
NXP Semiconductors RF Manual 16th edition
9
Recommended products
Function
Product
fmin (MHz)
fmax (MHz)
P1dB (W)
Matching
Package
Type
Driver
Driver/final
MMIC
700
2110
2500
2000
700
2200
2170
2700
2200
1000
1000
1000
960
10
-
SOT1179
SOT1121
SOT1121
SOT1212
SOT467
BLP7G22-10*
40
I/O
I/O
I/O
-
BLF6G22L(S)-40P
BLF6G27L(S)-40P
BLM7G22S-60PB(G)*
BLF6H10L(S)-160
40
60
160
200
270
300
140
160
250
260
250
160
200
270
100
140
100
50
700
I/O
I/O
I/O
O
SOT1244C BLF8G10LS-200GV
SOT1244C BLF8G10LS-270GV
700
850
SOT539
SOT1224
SOT502
SOT502
SOT539B
SOT539
SOT502B
BLF8G10L(S)-300P*
BLP7G09S-140P(G)*
BLF8G10L(S)-160*
BLF7G10L(S)-250
BLF7G20LS-260A*
BLF7G20L(S)-250P
BLF7G22L(S)-160*
900
1000
960
920
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
O
HPA
920
960
Final
1800
1805
2000
2000
2000
2500
2500
3400
2010
1900
1880
2200
2200
2200
2700
2700
3600
2025
SOT1244C BLF8G22LS-200GV*
SOT1244C BLF8G22LS-270GV*
SOT502
SOT502
SOT502
SOT1130
BLF7G27L(S)-100
BLF7G27L(S)-140
BLF6G38(LS)-100
BLD6G21L(S)-50
Integrated Doherty
* Check status in section 3.1, as this type is not yet released for mass production
Product highlight:
BLF8G10LS-160
Features
` Excellent ruggedness
` High efficiency
` Low Rth providing excellent thermal stability
` Designed for broadband operation (920 to 960 MHz)
` Lower output capacitance for improved performance in Doherty
applications
160 W LDMOS power transistor for base W-CDMA base station and
multi-carrier applications at frequencies from 920 to 960 MHz.
` Low memory effects for excellent pre-distortability
` Internally matched for ease of use
` Integrated ESD protection
` Compliant to Restriction of Hazardous Substances (RoHS) Directive
2002/95/EC
10
NXP Semiconductors RF Manual 16th edition
Function
Product
Package
SOT753
SOT753
Various
Type
BAP64Q
BAP70Q
BAP64^
Discrete
attenuator
RF diode
PIN diode
Function
Product
Package
Type
BFU725F/N1
BFU690F
BFU730F
BFU760F
BFU790F
BGU7051
BGU7052
BGU7053
BGU7060
BGU7061
BGU7062
BGU7063
RF transistor
SiGe:C transistor
SiGe:C MMIC
SOT343F
LNA (low noise
amplifier)
SOT650
MMIC
SOT1301
Function
Product
Gain range
Package
Type
Single VGA
(variable-gain
amplifier)
BGA7210
MMIC
31 dB
SOT617
BGA7204
Function
Product
Gain range
Package
Type
Dual VGA
(variable-gain
amplifier)
24 dB
BGA7350
MMIC
SOT617
28 dB
BGA7351
Function
Product
PL (1dB) @ 940 MHz
24 dBm
Package
Type
BGA7024
BGA7027
BGA7124
BGA7127
BGA7130
MPA
(medium
power
SOT89
28 dBm
25 dBm
28 dBm
30 dBm
MMIC
SOT908
amplifier)
Function
Product
Frequency
0.7 - 1.2 GHz
1.7 -2.7 GHz
Package
Type
BGX7220
BGX7221
Dual mixer
MMIC
SOT1092
Function
Product
Noise
Package
Type
PLL + VCO
(LO generator)
131 dBc/Hz @ 1 MHz
offset @ 5.3 GHz
MMIC
SOT617
BGX7300*
Function
Product
Output power
0 dBm
Package
Type
BGX7100
BGX7101
IQ modulator
MMIC
SOT616
4 dBm
* Check status in section 3.1, as this type is not yet released for mass production
for mass production
^ SOD523, SOD323, SOT23 & SOT323
Product highlight:
Features
` Internally matched for 50 Ω
Digital VGAs BGA7204 & BGA7210
- BGA7204 = 0.4 to 2.75 GHz
- BGA7210 = 0.7 to 3.8 GHz
These 6-bit digital VGAs offer high linearity (35 dBm @ 2.2-2.8 GHz)
and high output power (23 dBm @ 2.2-2.8 GHz) across a large
bandwidth without external matching. Smart routing with no
connection crosses simplifies design and decreases footprint by 25%.
The unique power-save mode can effectively reduce the current
consumption in TDD systems up to 45%. The BGA7210 adds flexible
current distribution across its two amplifiers, depending on the
attenuation state, to save current.
` High maximum power gain
- BGA7204 = 18.5 dB
- BGA7210 = 30 dB
` High output third-order intercept, IP3O
- BGA7204 = 38 dB
- BGA7210 = 39 dB
` Attenuation range of 31.5 dB, 0.5 dB step size (6 bit)
` Fast switching power-save mode (power-down pin)
` Digitally controlled current setting from 120 to 195 mA with an
optimum at 185mA (BGA7210 only)
` Simple control interfaces (SPI)
` ESD protection on all pins (HBM 4 kV; CDM 2 kV)
NXP Semiconductors RF Manual 16th edition
11
1.1.2 Point-to-point communications
Application diagram
INDOOR UNIT
POWER
OUTDOOR UNIT
SUPPLY
VGA
MPA
IF
VGA
MPA
PA
0
PLL VCO
90
BPF
BUF
to/from
IDU
DIGITAL
SIGNAL
PROCESSOR
REF
REF
MPX
MPX
SYNTH
PLL
PLL
ANTENNA
PMU
PMU
VGA LNA
IF
LNA LNA
0
ANALOG
VGA
PLL VCO
LPF
90
VGA
VGA
DATA
INTERFACE
brb406
Recommended products
Indoor unit
Function
Product
Gain range
Package
Type
Function
Product
Package
Type
Single VGA
(variable-gain
amplifier)
BGA2800
BGA2801
BGA2815
BGA2816
BGM1012
BGA2714
BGA2748
BGA2771
23 dB
BGA7202
BGA7204
MMIC
SOT617
IF gain block
MMIC
31 dB
IF
SOT363
Function
Product
Gain range
Package
Type
General-
purpose
wideband
amplifiers
Dual VGA
(variable-gain
amplifier)
24 dB
BGA7350
MMIC
MMIC
SOT617
28 dB
BGA7351
Function
Product
Package
SOT891
Type
PL (1dB) @
940 MHz
24 dBm
28 dBm
25 dBm
28 dBm
30 dBm
Function
Product
Package
Type
BGU7003
BGU7051
BGU7052
BGU7053
BGU7060
BGU7061
BGU7062
BGU7063
BFU725F/N1
BFU710F
BFU730F
BFG425W
BFG424W
BFG325/XR
BGA7024
BGA7027
BGA7124
BGA7127
BGA7130
SOT89
MPA
(medium
power
SOT650
SiGe:C
MMIC
MMIC
RF MMIC
SOT908
amplifier)
SOT1301
SOT343F
LNA
Output
power
0 dBm
4 dBm
Function
Product
Package
Type
SiGe:C
transistor
BGX7100
BGX7101
IQ
MMIC
SOT616
modulator
RF transistor
SOT343R
SOT143R
Wideband
transistor
12
NXP Semiconductors RF Manual 16th edition
Outdoor unit
Function
Product
Gain range
Package
Type
Function
Product
Gain range
Package
Type
Single VGA
(variable-
gain
Dual VGA
(variable-
gain
BGA7210
24 dB
BGA7350
MMIC
31 dB
SOT617
MMIC
SOT617
BGA7204
28 dB
BGA7351
amplifier)
amplifier)
PL (1dB)
@ 940 MHz
24 dBm
28 dBm
25 dBm
28 dBm
30 dBm
Function
Product
Noise
Package
Type
Function
Product
Package
Type
PLL + VCO
(LO
generator)
-131 dBc/Hz @
1 MHz offset
@ 5.3 GHz
BGA7024
BGA7027
BGA7124
BGA7127
BGA7130
MMIC
SOT617
BGX7300*
MPA
(medium
power
SOT89
MMIC
SOT908
amplifier)
Function
Product
Package
Type
BFG424W
BFG425W
BFU725F/N1
BFU730F
BFU760F
BFU790F
Wideband
transistor
SOT343R
Function
Product
Package
Type
BFU725F/N1
BFU730F
BFU760F
BFU790F
Oscillator
RF transistor
SiGe:C
transistor
SiGe:C
transistor
SOT343F
Buffer
RF transistor
SOT343F
* Check status in section 3.1, as this type is not yet released for mass
production
Function
Product
Package
Type
BFU725F/N1
BFU730F
BFU760F
BFU790F
SiGe:C
transistor
LNA
RF transistor
SOT343F
NXP BTS Tx component demonstrator board
Function
Product
Package
Type
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
BGM1014
BGM1013
BGM1012
BGA2714
IF gain block
MMIC
IF
SOT363
General-
purpose
wideband
amplifiers
MMIC
Product highlight:
BGA7350 MMIC variable-gain amplifier
Features
` Dual independent digitally controlled 24 dB gain range VGAs,
with 5-bit control interface
` 50 to 250 MHz frequency operating range
` Gain step size: 1 dB 0.1 dB
The BGA7350 MMIC is a dual independent digitally controlled IF
variable-gain amplifier (VGA) operating from 50 to 250 MHz. Each IF
VGA amplifies with a gain range of 24 dB and, at its maximum gain
setting, delivers 17 dBm output power at 1 dB gain compression
with superior linear performance. The BGA7350 is optimized for a
differential gain error of less than 0.1 dB for accurate gain control
and has a total integrated gain error of less than 0.4 dB. It is housed
in a 32-pin leadless HVQFN package (5 x 5 mm).
` 18.5 dB power gain
` Fast gain stage switching capability
` 17 dBm output power at 1 dB gain compression
` 5 V single supply operation with power-down control
` Logic-level shutdown control pin reduces supply current
` ESD protection at all pins
` Unconditionally stable
NXP Semiconductors RF Manual 16th edition
13
1.1.3 Repeater
Application diagram
Dual mixer
mixer
Dual DAC
Dual ADC
ADC
Dual VGA
VGA
Dual mixer
mixer
LNA
LNA
Tx0
Rx0
Rx1
PA
PA
LPF
LPF
LPF
LPF
RF SAW
RF SAW
I-DAC
DDC/
DUC
Filtering
Tx1
VGA
LNA
Q-DAC
ADC
mixer
mixer
PLL
VCO
Clock
LO Signal
Recovery
jitter
cleaner
brb631
Recommended products
Function Product
Driver
fmin (MHz) fmax (MHz)
P1dB (W)
Matching Package
Type
700
2300
700
2200
2700
1000
1550
2000
2170
2700
3800
2025
2170
10
10
45
40
45
40
40
50
50
50
-
SOT1179
SOT975
SOT608
SOT1135
SOT608
SOT1121
SOT1121
SOT502
SOT1130
SOT1130
BLP7G22-10*
I
I
BLF6G27-10(G)
BLF6G10(S)-45
BLF6G15L(S)-40RN
BLF6G20(S)-45
BLF6G22L(S)-40P
BLF6G27L(S)-40P
BLF6G38(LS)-50
BLD6G21L(S)-50
BLD6G22L(S)-50
1450
1800
2110
2500
3400
2010
2110
I/O
I/O
I/O
I/O
I/O
O
HPA
Driver/final
Integrated Doherty
I/O
Function
Product
PL (1 dB) @ 940 MHz
24 dBm
28 dBm
25 dBm
28 dBm
Package
Type
BGA7024
BGA7027
BGA7124
BGA7127
BGA7130
SOT89
MPA
MMIC
(medium power amplifier)
SOT908
30 dBm
Function
Product
MMIC
Gain range
24 dB
Package
Type
BGA7350
BGA7351
Dual VGA
(variable-gain amplifier)
SOT617
28 dB
Function
Product
MMIC
Frequency range
1.7 - 2.7 GHz
0.7 - 1.2 GHz
Package
Type
BGX7220
BGX7221
Dual mixer
SOT1092
Function
Product
Package
Type
BGU7051
BGU7052
BGU7053
BGU7060
BGU7061
BGU7062
BGU7063
SOT650
LNA
SiGe:C MMIC
SOT1301
Function
Product
MMIC
Noise
Package
Type
PLL + VCO
(LO generator)
-131 dBc/Hz @ 1 MHz
offset @ 5.3 GHz
SOT617
BGX7300*
* Check status in section 3.1, as this type is not yet released for mass production
Product highlight:
BGX7221 MMIC dual down-mixer
Features
` 8.5 dB conversion gain over all bands
` 13 dBm input, 1 dB compression point
` 25.5 dBm input third-order intercept point
` 10 dB (typ) small signal noise figure
` Integrated active biasing
The BGX7221 combines a pair of high performance, high linearity
down-mixers for use in receivers that have a common local oscillator
used with, for example, main and diversity paths. The device covers
frequency bands from 1700 to 2700 MHz with an extremely flat
` Single +5 V supply operation
` Power-down per mixer with hardware control pins
` Low bias current in power-down mode
` Matched 50 Ω single-ended RF and LO input impedances
` ESD protection at all pins
behavior.
14
NXP Semiconductors RF Manual 16th edition
1.2 Broadband communication infrastructure
1.2.1 CATV optical (optical node with multiple out-ports)
Application diagram
duplex
RF power
amplifier
filter
coax out
port 1
RF forward
receiver
splitter
coax out
port 2
RF pre-
amplifier
fiber in
coax out
port 3
coax out
port 4
bra852
Recommended products
Function
Product
Frequency
Package
SOT115
SOT115
Type
BGO807C
BGO807CE
RF forward
receiver
Forward
path receiver
870 MHz
Function
Product
Power doubler
Frequency
870 MHz
Gain (dB)
18.2 - 18.8
18 - 19
21 - 22
23 - 24.5
27 - 28.5
Type
BGD812
BGY885A
BGY887
CGY1043
CGY1047
870 MHz
1 GHz
RF
pre-amplifier
Push-pulls
Function
Product
Frequency
Gain (dB)
22 - 24
24 - 26
22 - 23.5
26.5 - 28
Type
CGD942C
CGD944C
CGD1042Hi
CGD1046Hi
870 MHz
RF power
amplifier
Power
doublers
1 GHz
Product highlight:
BGO807CE optical receiver
Features
` Excellent linearity
` Low noise
` Excellent flatness
` Standard CATV outline
` Rugged construction
` Gold metallization ensures excellent reliability
` High optical input power range
The BGO807CE is an integrated optical receiver module that
provides high output levels and includes an integrated temperature-
compensated circuitry. In your optical node design, BGO807CE
enables a high performance/ price ratio and ruggedness. When
upgrading an HFC network from analog to digital, our BGO807CE
is the perfect fit.
NXP Semiconductors RF Manual 16th edition
15
1.2.2 CATV electrical (line extenders)
Application diagram
duplex
filter
RF pre-
RF power
amplifier
duplex
filter
amplifier
coax in
coax out
RF reverse
amplifier
bra505
Recommended products
Function
Product
Frequency
550 MHz
Gain (dB)
Type
Function
Product
Frequency
Gain (dB)
18.2 - 18.8
18.2 - 18.8
20 - 20.6
18.2 - 18.8
19.7 - 20.3
22 - 23
24 - 26
22 - 24
24 - 26
19.5 - 22
22 - 23.5
23.5 - 25.5
26 - 28
22 - 24
23.5 - 25.5
26 - 28
Type
BGD712
BGD712C
BGD714
BGD812
33.5 - 35.5
33.2 - 35.2
18 - 19
21 - 22
18 - 19
BGY588C
BGE788C
BGY785A
BGY787
BGY885A
BGY887
750 MHz
750 MHz
870 MHz
BGD814
870 MHz
21 - 22
CGD942C
CGD944C
CGD1042H
CGD1044H
CGD1040Hi
CGD1042Hi
CGD1044Hi
CGD1046Hi
CGD982HCi
CGD985HCi
CGD987HCi
RF
33.5 - 34.5
34.5 - 36.5
18 - 19
21 - 22.5
23 - 24.5
27 - 28.5
29 - 31
BGY888
Push-pulls
pre-amplifier
CGY888C
BGY1085A
CGY1041
CGY1043
CGY1047
CGY1049
CGY1032
RF power
amplifier
Power
doublers
1003 MHz
1003 MHz
32 - 34
Function
Product
Frequency
5-75 MHz
5-120 MHz
5-200 MHz
Gain (dB)
29.2 - 30.8
24.5 - 25.5
23.5 - 24.5
Type
BGY68
BGY66B
BGY67A
RF reverse
amplifier
Reverse
hybrids
All available in SOT115 package
Product highlight:
CGD1046Hi
Features
` High output power
` High power gain for power doublers
` Extremely low noise
` Dark Green products
` GaAs HFET dies for high-end applications
` Rugged construction
` Superior levels of ESD protection
` Integrated ringwave protection
Capable of supporting high output power, the CGD1046Hi is
primarily designed for use in fiber deep-optical-node applications
(N+1/2/3). This 1 GHz hybrid amplifier solution offers an extended
temperature range, high-power overstress capabilities in case of
surges, and high ESD levels. The result is a low cost of ownership,
with durability and superior ruggedness.
` Design optimized for digital channel loading
` Temperature-compensated gain response
` Optimized heat management
` Excellent temperature resistance
16
NXP Semiconductors RF Manual 16th edition
Looking for more information on our wideband LNAs supporting multi-tuner applications in TVs, DVR/PVRs, and STBs?
See section 2.3.1 LNAs with programmable gain & bypass option for improved tuner performance.
1.3 TV and satellite
1.3.1 Network interface module (NIM) for TV reception
Application diagram
CONVENTIONAL
TUNER OR
VGA
SILICON TUNER
surge
RF input
RF SW
WB LNA
RF output
brb403
Recommended products
Function
Product
Vcc (V)
Gain (db)
Package
Type
5
10
SOT363
BGU7031
BGU7032
BGU7033
BGU7041
BGU7042
BGU7044
BGU7045
10
-2
5
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
10
5
5
-2
LNA
MMIC
3.3
3.3
3.3
3.3
10
10
-2
14
14
-2
Product highlight:
and remodulators. The active splitter requires an LNA with excellent
linearity. NXP has developed two new series of LNA/VGA MMICs
(BGU703x/BGU704x), designed especially for high linearity (P3O
of 29 dBm) in low-noise applications such as an active splitter in a
NIM tuner. The BGU703x family operates at a supply voltage of 5 V
and is intended for use with normal can tuners. The BGU704x family
operates at 3.3 V and works seamlessly with our Si tuner ICs, which
also operate at 3.3 V.
Make a high-performance active splitter in a NIM tuner
with the BGU703x/ BGU704x
Today's TV tuners require complicated signal handling and benefit
from flexibility in design. The front-end of a TV signal receiver is
no longer just a tuned receiver, but has evolved into an RF network
interface module (NIM) with tuned demodulators, active splitters,
NXP Semiconductors RF Manual 16th edition
17
Recommended products
Function
Product
Package
SOT23
Type
BF1107
SOT143B
SOT143R
SOT343
SOT343R
SOT143B
SOT143R
SOT343
SOT343R
BF1108
5 V silicon RF
switch
BF1108R
BF1108W
BF1108WR
BF1118
BF1118R
BF1118W
BF1118WR
RF Switch /
PLT switch
MOSFET
3.3 V silicon
RF switch
Function
Product
Package
Type
2-in-1 with
band switch
@ 5 V
SOT363
BF1215
AGC control
amplifier
MOSFET
2-in-1 @ 5 V
5 V
SOT363
SOT343
BF1216
BF1217
Note: given that there is now an LNA before the MOSFET, the gain of these
MOSFETs is made slightly lower and the cross-modulation somewhat higher.
That way, the MOSFET is not under AGC even under nominal RF input level.
BGU703x evaluation board
Product highlight:
to the recording device is on, the BF11x8 is open, so the RF signal
travels via the recording device to the TV tuner. When power to the
recording device is off, the BF11x8 closes. This ensures that the RF
signal is looped through directly to the TV tuner and guarantees TV
reception. This saves energy because the recording device can be
powered off.
Save energy with the BF11x8
The BF11x8 series are small-signal, RF-switching MOSFETs that can
be used to switch RF signals up to 1 GHz. Using the BF11x8 series
as an RF switch saves a considerable amount of energy. When a
recording device (DVD-R, HDD-R, VCR, DVR) is powered off, viewers
can still watch TV, although the antenna is looped via the recording
device. Without the BF11x8, the antenna signal is lost. When power
18
NXP Semiconductors RF Manual 16th edition
1.3.2 Basic TV tuner
Application diagram
MOSFET
MOPLL
IC
RF input
From antenna,
cable, active splitter,
etc.
IF
V
AGC
bra500
Recommended products
Function
Product
Package
SOD323
SOD523
SOD323
SOD523
SOD523
SOD882D
SOD882D
SOD323
SOD882D
SOD523
SOD523
Type
BB152
BB182
BB153
BB178
BB187
BB178LX
BB187LX
BB149A
BB179LX
BB179
Function
Product
Bandswitch diode
Package
SOD523
SOD523
SOD523
Type
BA277
BA891
BA591
VHF low
Bandswitching
VHF high
Function
Product
Package
SOD323
SOD523
SOD323
SOD882D
SOD523
SOD882D
SOD523
SOD323
SOD882D
SOD523
SOD523
Type
BB152
BB182
BB153
BB178LX
BB178
BB187LX
BB187
BB149A
BB179LX
BB179
Varicap
diode
Input filter
VHF low
UHF
VHF high
UHF
Varicap
diode
BB189
Bandpass filter
Function
Product
Package
SOT143
SOT143
SOT143
SOT143
SOT143
SOT363
SOT363
SOT363
SOT363
SOT363
SOT666
SOT666
SOT363
SOT363
SOT363
Type
BF1201
BF1202
BF1105
BF1211
BF1212
BF1102R
BF1203
BF1204
BF1206
BF1207
BF1208
BF1208D
BF1210
BF1214
BF1218
5 V
BB189
Function
Product
Package
SOD323
SOD523
SOD323
SOD882D
SOD523
SOD882D
SOD523
SOD323
SOD882D
SOD523
SOD523
Type
BB152
BB182
BB153
BB178LX
BB178
BB187LX
BB187
BB149A
BB179LX
BB179
VHF low
RF
MOSFET
pre-amplifier
VHF high
2-in-1 @ 5 V
Varicap
diode
Oscillator
UHF
V
BB189
Function
Product
Package
Type
2-in-1 with
band switch SOT363
@ 5 V
BF1215
RF
MOSFET
2-in-1 @ 5 V SOT363
BF1216
BF1217
pre-amplifier
5 V
SOT343
Product highlight:
Features
` Internally biased
BGU7045 1 GHz wideband low-noise amplifier
with bypass
` Noise figure of 2.8 dB
` High linearity with an IP3 of 29 dBm
` 75 Ω input and output imOpedance
` Power-down during bypass mode
The BGU7045 MMIC is a 3.3 V wideband amplifier with bypass mode.
It is designed specifically for high-linearity, low-noise applications
over a frequency range of 40 MHz to 1 GHz. It is especially suited
to set-top box applications. The LNA is housed in a 6-pin SOT363
plastic SMD package.
` Bypass mode current consumption < 5 mA
` ESD protection > 2 kV HBM and >1.5 kV CDM on all pins
NXP Semiconductors RF Manual 16th edition
19
1.3.3 Satellite outdoor unit, twin low-noise block (LNB) with discrete components
Looking for fully integrated mixer/oscillator/downconverter for universal single LNB?
See section 2.3.2 Complete satellite portfolio for all LNB architectures
Application diagram
horizontal
antenna
1st
2nd
3rd
stage
LNA
stage
LNA
stage
LNA
mixer
H low
IF amplifier
low
oscillator
IF out 1
IF
mixer
V low
amplifier
(4 x 2)
IF
IF amplifier
H high
BIAS IC
SWITCH
mixer
mixer
IF amplifier
vertical
antenna
high
oscillator
IF out 2
IF
V high
amplifier
brb022
IF amplifier
1st
2nd
3rd
stage
LNA
stage
LNA
stage
LNA
Recommended products
Function
Product
Package
Type
BFU710F
BFU730F
2nd & 3rd
SiGe:C
transistor
RF transistor
SOT343F
stage LNA
Function
Product
RF bipolar
transistor
Package
SOT343
SOT343F
Type
BFG424W
BFG424F
BFU660F
BFU710F
BFU730F
Wideband
transistor
Oscillator
SiGe:C
transistor
RF transistor
SOT343F
Function
Product
Package
Various
Various
Various
Various
Various
Type
Function
Product
Package
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
Type
BAP64^
BAP51^
BAP1321^
BAP50^
BAP63^
BGA2800
BGA2801
BGA2815
BGA2816
BGA2818
BGA2850
BGA2865
BGA2866
BGA2867
BGA2870
BGA2874
BGM1014
IF switch
RF diode
PIN diode
Output
stage IF
amplifier
MMIC
IF gain block
Function
Product
Package
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT343
SOT343F
Type
BGA2800
BGA2801
BGA2802
BGA2803
BGA2815
BGA2816
BGA2817
BGA2818
BGA2850
BGA2851
BGA2866
BFG424W
BFG424F
1st stage
IF
amplifier
MMIC
IF gain block
RF bipolar
transistor
Wideband
transistor
SOT343
BFG325
BFU710F
BFU730F
2nd stage LNA RF transistor
SiGe:C
SOT343F
Function
Product
Package
Type
BFU710F
BFU730F
SiGe:C
transistor
RF bipolar
transistor
Wideband
transistor
Mixer
RF transistor
SOT343F
^ Also available in ultra-small leadless package SOD882D
Product highlight:
Features
` No output inductor necessary when used at the output stage
` Internally matched to 50 Ω
BGA28xx-family of IF gain blocks
` Reverse isolation > 30 dB up to 2 GHz
` Good linearity with low second- and third-order products
` Unconditionally stable (K > 1)
The BGA28xx IF gain blocks are silicon Monolitic Microwave
Integrated Circuit (MMIC) wideband amplifiers with internal
matching circuitry in a 6-pin SOT363 plastic SMD package.
20
NXP Semiconductors RF Manual 16th edition
1.3.4 Satellite outdoor unit, twin low-noise block (LNB) with integrated mixer / oscillator / downconverter
Application diagram
LNA3
TFF1014
SWITCHED TO
LOW-BAND
IF out 1
LNA1
LNA2
BPF
H
LNA3
LNA3
LNA3
shared
crystal
LNA1
LNA2
TFF1014
SWITCHED TO
HIGH-BAND
IF out 2
V
BPF
22 kHz
TONE
DETECT
3
H/V
DETECT
aaa-002896
Recommended products
Function
Product
Package
Type
BFU710F
BFU730F
2nd & 3rd
SiGe:C
transistor
RF transistor
SOT343F
stage LNA
Function
Product
Package
Type
Mixer/
oscillator/
RF IC
SOT763
TFF1014HN
downconverter
Product highlight:
Features
` Ultra-low current consumption (ICC = 52 mA)
` Low phase noise (1.5° RMS typ)
` Integration bandwidth from 10 kHz to 13 MHz
` Small PCB footprint
Industry’s lowest-power integrated Ku-band downconverters
These Universal DVB-S compliant Ku-band downconverters consume
about 50% less current (52 mA) than other integrated solutions.
They are fully integrated (PLL synthesizer/mixer/IF gain block) and RF
tested – which results in significantly decreased manufacturing time.
Stability of the local oscillator is guaranteed, which improves overall
system reliability over temperature and time, and eliminates the need
for manual alignment in production.
- DHVQFN16 package (2.5 x 3.5 x 0.85 mm)
- Only 7 external components
- No inductors necessary
NXP Semiconductors RF Manual 16th edition
21
1.3.5 Satellite multi-switch box - 4 x 4 (up to 16 x 16) / DiSEqC / SMATV
Application diagram
terrestrial
input
input
amplifier
terrestrial
input
amplifiers
LNB
output
amplifiers
coax out to STB
coax out to STB
coax out to STB
SWITCH MATRIX
FOR 4 × 4,
NEEDS 16
(SINGLE) PIN
DIODES
coax out to STB
brb023
Recommended products
Function
Product
Package
Type
BGA6289
BGA6489
BGA6589
BGA7024
BGA7124
General
Input
amplifier
terrestrial
purpose
medium
power
SOT89
MMIC
amplifier
SOT908
Function
Product
Package
SOT363
SOT363
SOT363
SOT363
SOT343
SOT343
SOT143
SOT143
Type
BGA2771
BGA2866
BGA2867
BGA2818
BFG325
BFG425W
BFG520
BFG540
BFU660F
General
purpose
amplifier
MMIC
Input
amplifier
LNB
Wideband
transistor
Function
Product
Package
Type
RF bipolar
transistor
BGA6289
BGA6489
BGA6589
BGA7024
BGA7124
General
purpose
medium
power
SiGe:C
transistor
SOT89
SOT343F
BFU725F/N1
BFU730F
MMIC
amplifier
SOT908
SOT363
Function
Product
Package
Type
General
purpose
amplifier
BGM1011
BGA2869
BAP50^
BAP51^
BAP63^
BAP64^
BAP70^
BAP1321^
BFU725F/N1
BFU730F
Output
amplifier
SOT363
SOT223
SOT223
SOT223
SOT143
BFG135
BFG 591
BFG198
BFG540
BFU725F/N1
BFU730F
RF diode
PIN diode
Various
Wideband
transistor
Switch
matrix
RF bipolar
transistor
SiGe:C
transistor
SiGe:C
transistor
SOT343F
RF transistor
SOT343F
^ Also available in ultra-small leadless package SOD882D
Product highlight:
Features
` High isolation, low distortion, low insertion loss
` Low forward resistance (Rd) and diode capacitance (Cd)
` Ultra-small package options
PIN diodes for switching matrix
In addition to delivering outstanding RF performance, this component
simplifies design-in because of its extremely low forward resistance,
diode capacitance, and series inductance. Significant board space
is saved by supplying a range of highly compact package options,
including SOD523, SOD323 and leadless SOD882D.
22
NXP Semiconductors RF Manual 16th edition
1.3.6 VSAT
Application diagram
INDOOR UNIT
OUTDOOR UNIT
IF
IF1
PA
POWER
SUPPLY
MOD
BUF
SYNTH
PLL
PLL
to/from
IDU
DIGITAL
SIGNAL
REF
REF
MPX
MPX
OMT
ANTENNA
PROCESSOR
´ N
PMU
LNA
PMU
IF2
BUF
IF1
LNA2
LNA1
DATA
DEMOD
INTERFACE
brb405
Recommended products
Indoor unit
Function
Product
Package
Type
BGA2714
BGA2748
BGA2771
BGA2800
BGA2801
BGA2815
BGA2816
BGM1012
IF
MMIC
IF gain block
SOT363
Function
Product
Package
Type
BFU725F/N1
BFU710F
BFU725F/N1
BFU730F
SiGe:C transistor
SOT343F
LNA
RF transistor
BFG425W
BFG424W
BFG325/XR
SOT343R
SOT143R
Wideband
transistor
Product highlight:
Features
` Phase noise compliant with IESS-308 (Intelsat)
` LO generator with VCO range: 12.8 to 13.05 GHz
` Input signal 50 to 816 MHz
TFF1003HN Low phase noise LO generator for VSAT
applications
` Divider settings: 16, 32, 64, 128, or 256
` Output level −5 dBm; stability 2 dB
` Third- or fourth-order
The TFF1003HN is a Ku-band frequency generator intended for
low phase noise local-oscillator (LO) circuits for Ku-band VSAT
transmitters and transceivers. The specified phase noise complies
with IESS-308 from Intelsat.
` Internally stabilized voltage references for loop filter
NXP Semiconductors RF Manual 16th edition
23
Recommended products
Outdoor unit
Function
Product
Package
Type
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
BGM1014
BGM1013
BGM1012
BGA2714
IF
MMIC
IF gain block
SOT363
Function
Product
Package
Type
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU760F
BFU790F
BGU7003
RF transistor
SiGe:C transistor
SOT343F
LNA2
MMIC
SiGe:C MMIC
SiGe:C IC
SOT891
Function
Product
RF IC
Package
Type
TFF1003HN
TFF1007HN
TFF11xxxHN^
PLL
SOT616
Function
Product
Package
Type
BFG424W
BFG425W
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU760F
BFU790F
Wideband
transistor
SOT343R
Oscillator
RF transistor
SiGe:C transistor
SOT343F
Function
Synth
Product
RF diode
Package
SOD523
Type
BB202
Varicap diode
Function
Product
Package
Type
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU760F
BFU790F
Buffer
RF transistor
SiGe:C transistor
SOT343F
^ 17 different types with LO ranges: 7-15 GHz, see 3.4.4
Product highlight:
Features
` Divider settings: 64
TFF1007HN Low phase noise LO generator
for VSAT applications
` Input signal 230.46 to 234.38 MHz
` Internally stabalized voltage references for loop filter and output
power level
The TFF1007HN is a Ku-band frequency generator intended for
low phase noise local-oscillator (LO) circuits for Ku-band VSAT
transmitters and transceivers. The specified phase noise complies
with IESS-308 from Intelsat.
` LO generator with VCO range: 14.75 to 15 GHz
` Output level -4 dBm minimum
` Phase noise compliant with IESS-308 (Intelsat)
` Third- or fourth-order PLL
24
NXP Semiconductors RF Manual 16th edition
1.4 Portable devices
1.4.1 GPS
Application diagram
external
active
antenna
LNA
BPF
SPDT
embedded
antenna
LNA
BPF
BPF
GPS
RECEIVER
IC
001aan955
Recommended products
Function
Product
Package
Type
BAP64^
BAP1321^
BAP51^
SPDT switch
RF diode
PIN diode
Various
Function
Product
Package
SOT343F
SOT891
Type
BFU725F /N1
BFU710F
BFU730F
BGU7003
BGU7003W
BGU7004
BGU7005
BGU7007
BGU7008
BGU8007
BGU8006
SiGe:C
transistor
RF transistor
LNA
SiGe:C
MMIC
MMIC
SOT886
WL-CSP
^ Also available in ultra-small leadless package SOD882D
Product highlight:
Features
` Covers full GNSS L1 band, from 1559 to 1610 MHz
` Noise figure (NF) = 0.75 dB
BGU8007 SiGe:C LNA MMIC for GPS, GLONASS,
and Galileo
` Gain = 19.5 dB
` High 1 dB compression point of -12 dBm
` High out-of-band IP3i of 4 dBm
The BGU8007 is a low-noise amplifier (LNA) for GNSS receiver
applications in a plastic leadless 6-pin extremely-small SOT886
package. It requires only one external matching inductor and one
external decoupling capacitor.
` Supply voltage 1.5 to 2.85 V
` Power-down mode current consumption < 1 µA
` Optimized performance at low supply current of 4.8 mA
` Integrated temperature stabilized bias for easy design
` Requires only one input matching inductor and one supply
decoupling capacitor
NXP Semiconductors RF Manual 16th edition
25
1.4.2 FM radio
Application diagram
headset
antenna
LNA
SPDT
embedded
antenna
LNA
FM
RECEIVER
IC
001aan956
Recommended products
Function
Product
Package
Type
BAP64^
BAP 65^
BAP1321^
BAP51^
SPDT switch
RF diode
PIN diode
Various
Function
Product
Package
Type
SiGe:C
transistor
RF transistor
SOT343F
BFU725F /N1
BGU6101
BGU6102
BGU6104
BGU7003
BGU7003W
LNA
SOT1209
SiGe:C
MMIC
MMIC
SOT891
SOT886
^ Also available in ultra-small leadless package SOD882D
Product highlight:
BGU6102 MMIC wideband amplifier
Features
` Applicable between 40 MHz and 4 GHz
` High ohmic FM LNA: 13 dB gain and 1.0 dB NF at 100 MHz
` 50 Ω FM LNA: 15 dB gain and 1.3 dB NF at 100 MHz
` Integrated temperature-stabilized bias for easy design
` Bias current configurable with external resistor
` Power-down mode current consumption < 6 μA
` ESD protection > 1 kV Human Body Model (HBM) on all pins
` Supply voltage from 1.5 to 5 V
The BGU6102 is an unmatched MMIC featuring an integrated bias-
enable function and a wide supply voltage. It is part of a family of
three products (BGU6101, BGU6102, BGU6104), and is optimized for
2 mA operation.
26
NXP Semiconductors RF Manual 16th edition
1.4.3 China Mobile Multimedia Broadcasting (CMMB) in UHF band 470 – 862 MHz
Application diagram
Recommended products
Function
Product
Package
SOT891
SOT886
Type
BGU7003
BGU7003W
BGU6101
BGU6102
BGU6104
LNA
MMIC
SiGe:C MMIC
SOT1209
Product highlight:
BGU7003W MMIC wideband amplifier
Features
` Low-noise, high-gain microwave MMIC
` Bias current configurable with external resistor
` Noise figure NF = 1.2 dB at 600 MHz
` Insertion power gain = 19.5 dB at 600 MHz
` Power-down mode current consumption < 1 μA
` Optimized performance at low supply current of 5 mA
` ESD protection > 1 kV HBM on all pins
The BGU7003W MMIC is a wideband amplifier in SiGe:C technology
for high-speed, low-noise applications. It is housed in a plastic
leadless 6-pin extremely thin small outline SOT886 package.
NXP Semiconductors RF Manual 16th edition
27
1.4.4 Cellular receiver
Application diagram
GSM/EDGE FE
GSM/
EDGE
SWITCH
TRANSCEIVER
PA
BPF
UMTS
LTE
duplexer
001aan957
Recommended products
Function
Product
Package
SOT891
SOT886
Type
BGU7003
BGU7003W
LNA
MMIC
SiGe:C MMIC
Product highlight:
BGU7003 MMIC wideband amplifier
Features
` Applicable between 40 MHz and 6 GHz
` LTE LNA: 1 dB NF, 18.5 dB gain and -5 dBm IIP3 at 750 MHz
` Integrated temperature-stabilized bias for easy design
` Bias current configurable with external resistor
` Power-down mode current consumption < 1 μA
` ESD protection > 1 kV Human Body Model (HBM) on all pins
The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for
high-speed, low-noise applications. It is housed in a plastic leadless
6-pin extremely thin small outline SOT886 package.
28
NXP Semiconductors RF Manual 16th edition
1.4.5 802.11n DBDC and 802.11ac WLAN
Application diagram
low pass
ꢀlter
PActrl
Tx
antenna
medium
power
ampliꢀer
APPLICATION
CHIPSET
SPDT
switch
Rx
LNA
SPDT
bandpass
ꢀlter
bra502
Recommended products
Function
Product
Package
Type
BGA7024
BGA7027
BGA7124
BGA7127
Medium
power
amplifier
SOT89
Medium power
MMIC
amplifier
SOT908
Function
Product
RF transistor
MMIC
Package
Type
BFU730F
BFU760F
BFU730LX
SiGe:C
transistor
SOT343F
LNA
SiGe:C MMIC SOT883C
Product highlight:
Features
` System optimized gain of 12.5 dB @ 2.4 GHz and 11 dB @ 5.5 GHz
` Low noise figure (NF) of 1.1 dB @ 2.4 GHz and 5.5 GHz
` High input 1 dB gain compression (Pi(1dB) ) of -8 dBm @ 2.4 GHz and
-5 dBm @ 5.5 GHz
BFU760F NPN silicon germanium microwave transistor
The BGU760F is part of the family of 6th (Si) and 7th (SiGe:C)
generation RF transistors and can be used to perform nearly any RF
function. These next-generation wideband transistors offer the best
RF noise figure versus gain performance, drawing the lowest current.
This performance allows for better signal reception at low power and
enables RF receivers to operate more robustly in noisy environments.
` High input third order intercept point IP3I of +3 dBm @ 2.4 GHz and
+8 dBm @ 5.5 GHz
` Only 8 external components required
NXP Semiconductors RF Manual 16th edition
29
1.4.6 Generic RF front-end
Application diagram
antenna
filter
LNA
filter
mixer
buffer
VCO
LOW
SPDT
switch
FREQUENCY
CHIP SET
filter
PA
driver
VCO
bra850
Recommended products
Function
Product
Package
Type
BA277
BA591
BAP51^
BAP1321^
Function
Product
Package
SOT343
SOT343
SOT343
SOT363
Type
SOD523
SOD323
Various
Various
BFG410W
BFG425W
BFG480W
BGA2022
Bandswitch
diode
RF bipolar
transistor
Wideband
transistor
SPDT switch
RF diode
Mixer
PIN diode
MMIC
Linear mixer
Function
Product
Package
SOT23
SOT323
SOT323
Type
PBR951
PRF957
PRF947
Function
Product
Package
SOT23
SOT323
SOT323
SOT416
Type
PBR951
PRF957
PRF947
PRF949
Wideband
transistor
RF bipolar
transistor
Wideband
transistor
Buffer
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU760F
BFU790F
BGU6101
BGU6102
BGU6104
RF bipolar
transistor
Function
Product
Package
Type
BGA6289
BGA6489
BGA6589
BGA7024
BGA7027
SiGe:C
transistor
General-
purpose
wideband
amplifier
LNA
SOT343F
Power
amplifier
MMIC
SOT89
Function
Product
Varicap
diodes
Package
VCO varicap SOD523
diodes SOD323
Type
BB198
BB156
Low-noise
wideband ampl.
MMIC
SOT1209
VCO
Function
Product
RF bipolar
transistor
Package
SOT323
SOT23
Type
Wideband
transistor
Gen-purp
PRF957
PBR951
BGA2771
BGA2866
Driver
SOT363
MMIC
wideband amp SOT363
^ Also available in ultra-small leadless package SOD882D
Product highlight:
Features
` Low-noise, high-linearity microwave transistor
` 110 GHz fT silicon germanium technology
BFU790F silicon NPN germanium microwave transistor
` High maximum output power at 1 dB compression of 20 dBm
at 1.8 GHz
Silicon NPN germanium microwave transistor for high-speed, low-
noise applications in a plastic, 4-pin dual-emitter SOT343F package.
30
NXP Semiconductors RF Manual 16th edition
1.5 Automotive
1.5.1 SDARS & HD radio
Application diagram
antenna
1st
stage
LNA
2nd
stage
LNA
3rd
stage
LNA
filter
CHIPSET
001aan958
Recommended products
Function
Product
Package
Type
1st stage
LNA
Low-noise wideband
amplifier
MMIC
SOT343F
BFU730F
Function
Product
Package
Type
SOT343F
BFU690F
BGA2869
BGA2851
BGA2803
2nd stage
LNA
General-purpose
wideband amplifier
MMIC
SOT363
Function
Product
Package
Type
BFU690F
BFU725F/N1
BFU790F
3rd stage
LNA
RF transistor
SiGe:C transistor
SOT343F
Product highlight:
Features
At 2.3 GHz
BFU730F NPN wideband silicon germanium RF transistor
` High maximum power gain (Gp) of 17.6 dB
` Noise figure (NF) of 0.8 dB
` Input 1dB gain compression (Pi(1dB) ) of -15 dBm
` Input third order intercept point IP3I of +4.7 dBm
The BGU730F is part of the family of 6th (Si) and 7th (SiGe:C)
generation RF transistors and can be used to perform nearly any RF
function. These next-generation wideband transistors offer the best
RF noise figure versus gain performance, drawing the lowest current.
This performance allows for better signal reception at low power and
enables RF receivers to operate more robustly in noisy environments.
NXP Semiconductors RF Manual 16th edition
31
1.5.2 Remote keyless entry, RF generic front-end with dedicated antenna for reception and transmission
Application diagram
antenna
filter
LNA
filter
mixer
receiver
LOW
FREQUENCY
CHIP SET
buffer
VCO
antenna
filter
PA
driver
VCO
transmitter
LOW
FREQUENCY
CHIP SET
bra851
Recommended products
Function
Product
Package
SOT23
SOT323
SOT323
Type
Function
Product
Package
SOT343
SOT343
SOT343
Type
PBR951
PRF957
PRF947
BFG410W
BFG425W
BFG480W
RF bipolar
transistor
Wideband
transistor
RF bipolar
transistor
Wideband
transistor
Mixer
LNA
BGU6101
BGU6102
BGU6104
BGU7003W
Low-noise
wideband ampl.
SOT1209
Function
Product
Package
SOT23
SOT323
SOT323
SOT416
Type
MMIC
PBR951
PRF957
PRF947
PRF949
SiGe:C MMIC SOT886
RF bipolar
transistor
Wideband
transistor
Buffer
Function
Product
Package
Type
RF bipolar
transistor
Wideband
transistor
Gen-purp
SOT323
SOT23
SOT363
PRF957
PBR951
BGA2771
BGA2866
Function
Product
RF bipolar
transistor
Package
SOT323
SOT23
SOT363
SOT363
SOT908
Type
Driver
Wideband
transistor
General-purpose
wideband
PRF957
PBR951
BGA2771
BGA2866
BGA7124
MMIC
wideband amp SOT363
Power
amplifier
Function
Product
Package
SOD323
Type
MMIC
amplifier
BB148
BB149A
BB198
BB156
Varicap
diodes
VCO varicap SOD323
diodes
VCO
SOD523
SOD323
^ AEC-Q101 qualified (some limitations apply)
Product highlight:
Varicap diodes as VCO
Features
` Excellent linearity
` Excellent matching
` Very low series resistance
` High capacitance ratio
Varicap diodes are principally used as voltage varicap capacitors,
with their diode function a secondary option. These devices are ideal
for voltage controlled oscillators (VCOs) in ISM band applications.
32
NXP Semiconductors RF Manual 16th edition
1.5.3 Tire pressure monitoring system
Application diagram
antenna
filter
VCO
PA
driver
SENSOR
brb216
Recommended products
Function
Product
Package
SOT23
Type
BFR92A
SOT323
SOT23
SOT323
SOT323
BFR92AW
BFR94A^
BFR93AW
BFR94AW^
RF bipolar
transistor
Wideband
transistor
PA
Function
Product
RF bipolar
transistor
Package
SOT323
SOT23
Type
PRF957
PBR951
Wideband
transistor
Driver
Amplifier
Gen-purp
wideband amp
SOT363
SOT363
SOT363
BGA2031/1
BGA2771
BGA2866
MMIC
Function
Product
Package
SOD523
SOD323
Type
BB198
BB156
VCO
Varicap diodes VCO varicap diodes
^ AEC-Q101 qualified (some limitations apply)
Product highlight:
BGU6101 MMIC wideband amplifier
Features
` Applicable between 40 MHz and 6 GHz
` 13 dB gain and 0.8 dB NF at 450 MHz
` 50 Ω FM LNA: 15 dB gain and 1.4 dB NF at 100 MHz
` Integrated temperature-stabilized bias for easy design
` Bias current configurable with external resistor
` Power-down mode current consumption < 1 μA
` ESD protection > 1 kV Human Body Model (HBM) on all pins
The BGU6101 is an unmatched MMIC featuring an integrated bias-
enable function and a wide supply voltage. It is part of a family of
three products (BGU6101, BGU6102, BGU6104), and is optimized for
2 mA operation.
NXP Semiconductors RF Manual 16th edition
33
1.5.4 Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL)
Application diagram
FM input
filter
IF
1st
bandpass
filter
2nd
variable IF limiter
FM de-
& AGC
mixer
mixer
BW filter amplifier modulator
FM MPX
AGC &
hum filter
oscillator
oscillator
IF
AM LNA
AM audio
1st
2nd
RF input
filter
IF
IF
AM de-
mixer
mixer
bandpass
filter
bandpass amplifier modulator
filter
bra501
Recommended products
Function
AM LNA
Product
RF transistor
Package
SOT23
Type
BF862
Function
AGC &
hum filter
Product
RF diode
Package
Type
JFET
PIN diode
SOT363
BAP70AM
Function
Product
Package
SOT23
SOT23
SOD523
SOD323
Type
BB201^
BB207
BAP70-02
BAP70-03
Varicap
diode
Function
Product
RF diode
Package
SOD323
SOD523
Type
BB156
BB208-02
FM input
filter & AGC
Varicap
diode
RF diode
Oscillator
PIN diode
^ OIRT
Note 1:
Note 2:
The following recommended discrete products are applicable for
NICEPACS, CCC and DDICE: NICE:TEA6840H,TEA6845H,TEA684
6H, NICEPACS:TEA6848H,TEA6849H; CCC:TEF6901H,TEF6903H;
DDICE:TEA6721HL. All recommended discrete products are
applicable, excluding AM LNA in: DICE2:TEF6730HWCE.
Phones and portable radios (IC:TEA5767/68) use varicap BB202 as the
FM oscillator.
Product highlight:
BF862 junction field effect transistor
Features
` High transition frequency and optimized input capacitance for
excellent sensitivity
` High transfer admittance resulting in high gain
` Encapsulated in the versatile and easy-to-use SOT23 package
Our tuning portfolio contains advanced products for car radio
reception applications and in-vehicle media platforms. The NXP
devices for this application ensure excellent reception quality and
ease of design-in. Performance is demonstrated in reference designs.
The high-performance junction FET BG862 is specially designed for
AM radio amplifiers.
34
NXP Semiconductors RF Manual 16th edition
1.6 Industrial, scientific & medical (ISM)
1.6.1 Broadcast / ISM
Application diagram
typ. 0.5 kW
DVB-T
Driver stages
typ. 5 kW DVB-T
output power
harmonic
filter
TV exciter
DVB-T
power
monitor
8× final
amplifiers
Recommended broadcast products
Function
Product fmin (MHz) fmax (MHz) P1dB (W)
VDS (V)
50
η
D (%)
70
Gp (dB) Test signal Package
Type
10
1
500
1400
1000
1000
1400
128
20
35
27.5
19
CW
CW
SOT467C
SOT467C
SOT467
BLF571
Driver
32
63
60
49
BLF642
1
100
140
200
1200
500
300
600
600
40
21
CW
BLF871(S)
BLF881(S)
BLF647P(S)*
BLF178P
1
50
21
CW
SOT467
10
10
470
470
470
470
32
70
18
pulsed
pulsed
CW
SOT1121
SOT539A
SOT539A
SOT1121
SOT539
SOT539
HPA
50
75
28.5
21
Final
860
42
47
BLF879P
BLF884P(S)
BLF888A(S)
BLF888B(S)
860
50
46
46
46
21
CW
860
50
21
CW
860
50
21
CW
Recommended ISM products
Function
Product fmin (MHz) fmax (MHz) P1dB (W) Matching VDS (V)
η
D (%)
Gp (dB)
Test signal Package
Type
Driver
1
10
10
10
10
10
1300
2400
2400
2400
2400
2500
128
128
500
500
12
600
1400
200
600
1400
250
180
140
200
250
I
-
-
-
-
28
50
50
50
50
50
50
28
28
28
28
60
75
72
70
70
69
56
55
52
52
55
19
28
29
24
26
23
17
12
17.5
15
CW
pulsed
pulsed
pulsed
pulsed
pulsed
CW
CW
CW
CW
CW
SOT975
SOT539
SOT539
SOT1121
SOT539
SOT539
SOT1121
SOT539
SOT502
SOT502
SOT539
BLF25M612(G)*
BLF174XR(S)*
BLF178XR(S)
BLF572XR(S)*
BLF574XR(S)*
BLF578XR(S)
BLF6G13L(S)-250P
BLF2425M6L(S)180P*
BLF2425M7L(S)140*
BLF2425M7L(S)200*
BLF2425M7L(S)250P*
HPA
500
-
I
Final
1300
2500
2500
2500
2500
I/O
I/O
I/O
I/O
15
* Check status in section 3.1, as this type is not yet released for mass production
Product highlight:
BLF578XR Power LDMOS transistor
Features
` Output power = 1400 W
` Power gain = 23 dB
` High Efficiency = 69 %
` Integrated ESD protection
` Excellent ruggedness
` Excellent thermal stability
Designed for broadband operation, this 1400 W extremely rugged
LDMOS power transistor supports broadcast and industrial
applications in the HF to 500 MHz band. This product is an enhanced
version of the BLF578. It uses NXP's XR process to provide maximum
ruggedness capability in the most severe applications without
compromising RF performance.
NXP Semiconductors RF Manual 16th edition
35
1.6.2 E-metering, RF generic front-end with a single antenna / ZigBee
Application diagram
Looking for a wireless microcontroller platform with chipsets, modules and supporting software?
See section 2.5.6 Setting the benchmark for ultra low-power and high-performance wireless
connectivity solutions.
antenna
filter
LNA
filter
mixer
buffer
VCO
LOW
SPDT
switch
FREQUENCY
CHIP SET
filter
PA
driver
VCO
bra850
Recommended products
Function
Product
Package
SOT343
SOT343
SOT343
SOT363
Type
Function
Product
Package
Type
BA277
BA591
BAP51^
BAP1321^
BFG410W
BFG425W
BFG480W
BGA2022
SOD523
SOD323
Various
Various
Bandswitch
diode
RF bipolar
transistor
Wideband
transistor
Mixer
SPDT Switch
RF diode
PIN diode
MMIC
Linear mixer
Function
Product
Package
SOT23
SOT323
SOT323
SOT416
Type
Function
Product
Package
Type
PBR951
PRF957
PRF947
PRF949
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU760F
BFU790F
BGU7003W
RF bipolar
transistor
Wideband
transistor
Buffer
RF transistor
SiGe:C transistor SOT343F
LNA
Function
Product
RF bipolar
transistor
Package
Type
Wideband
transistor
SOT343
BFG21W
BGA6289
BGA6489
BGA6589
BGA7124
BGA7127
Medium power
amplifier
General-
purpose
wideband
amplifier
SOT89
MMIC
SiGe:C MMIC
SOT886
MMIC
SOT908
SOT908
Function
Product
Package
Type
RF bipolar
transistor
Wideband
transistor
SOT343
BFG425W
Function
Product
Varicap
diodes
Package
VCO varicap SOD523
diodes SOD323
Type
BB198
BB156
Driver
SOT363
SOT363
BGA2771
BGA2866
Gen-purp
wideband amp
MMIC
VCO
^ Also available in ultra-small leadless package SOD882D
Product highlight:
Features
` Operating range: 400 to 2700 MHz
` 16 dB small signal gain at 2 GHz
BGA7127 MMIC medium power amplifier
` 27 dBm output power at 1 dB gain compression
` Integrated active biasing
` 3.3 / 5 V single-supply operation
` Simple quiescent current adjustment
` 1 μA shutdown mode
The BGA7127 MMIC is a one-stage driver amplifier offered in a
low-cost, ultra-small SOT908 leadless package. It delivers 27 dBm
output power at 1 dB gain compression and superior performance
for various narrowband-tuned application circuits at frequencies up
to 2700 MHz.
36
NXP Semiconductors RF Manual 16th edition
1.6.3 RF microwave furnace application
Application diagram
antenna
oscillator
MPA
HPA
CONTROLLER
isolator
brb418
Recommended products
Function
Product
Package
Type
BFG410W
BFG424W
BFG425W
BFG424F
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU760F
BFU790F
SOT343R
Oscillator
RF transistor
SOT343F
Function
Product
Package
Type
BGA6289
BGA6489
BGA6589
BGA7124
BGA7024
BGA7127
BGA7027
BGA7130
SOT89
MPA
(medium
power
SOT908
SOT89
SOT908
SOT89
MMIC
amplifier)
SOT908
* Check status in section 3.1, as this type is not yet released for mass production
Function
Product
fmin (MHz) fmax (MHz) P1dB (W)
η
D (%)
G
p (dB)
test signal
Package
Type
Driver
1
2500
2500
2500
2500
2500
12
60
55
52
52
55
19
12
17.5
15
CW
CW
CW
CW
CW
SOT975
SOT539
SOT502
SOT502
SOT539
BLF25M612(G)
2400
2400
2400
2400
180
140
200
250
BLF2425M6L(S)180P
BLF2425M7L(S)140*
BLF2425M7L(S)200
BLF2425M7L(S)250P*
HPA
Final
15
Product highlight:
Features
` Excellent ruggedness
New family for ISM 2.45 GHz
` Consistent device performance
` Low thermal resistance for unrivalled reliability
` Ease of design
th
NXP's 6th and 7 generation LDMOS technology, along with advanced
packaging concepts, enables power amplifiers that deliver best-in-class
performance at 2.45 GHz. The unsurpassed ruggedness and low thermal
resistance, along with the intrinsic efficiency of the LDMOS process,
make these transistors ideally suited for furnace applications.
NXP Semiconductors RF Manual 16th edition
37
1.6.4 RF plasma lighting
Looking for more information on RF plasma lighting?
See section 2.5.2 RF-driven plasma lighting: The next revolution in light
sources are powered by solid-state RF technology
Application diagram
RF (plasma) bulb
oscillator
MPA
HPA
CONTROLLER
brb436
Recommended products
Function
Product
Package
Type
SOT143
SOT143
SOT23
BFG520
BFG325/XR
BFR520
SOT323
SOT323
SOT323
SOT343
SOT343
SOT363
SOT416
BFR92AW
BFR93AW
BFS520
BFG520W
BFG325W/XR
BFM520
Oscillator
RF transistor
BFR520T
Function
Product
Package
Type
BGA6289
BGA6489
BGA6589
BGA7124
BGA7024
BGA7127
BGA7027
BGA7130
SOT89
MPA
(medium
power
SOT908
SOT89
SOT908
SOT89
MMIC
amplifier)
SOT908
Function
Product
fmin (MHz)
fmax (MHz)
P1dB (W)
Package
Type
1
10
1
10
10
10
10
10
688
700
700
2400
2400
2400
2400
2500
500
1000
500
500
500
12
20
SOT975
SOT467C
SOT467
SOT502
SOT539A
SOT539
SOT539A
SOT539
SOT502
SOT502
SOT502
SOT539
SOT502
SOT502
SOT539
BLF25M612(G)*
BLF571
BLF871(S)
BLF573(S)
BLF574
BLF574XR(S)*
BLF578
BLF578XR(S)
BLF6G10(LS)-200RN
BLF6G10(LS)-135RN
BLF6G10(LS)-160RN
BLF2425M6L(S)180P*
BLF2425M7L(S)140
BLF2425M7L(S)200*
BLF2425M7L(S)250P
Driver
100
300
600
600
1200
1400
200
135
160
180
140
200
250
500
500
HPA
Final
1000
1000
1000
2500
2500
2500
2500
* Check status in section 3.1, as this type is not yet released for mass production
Product highlight:
Features
` Highest power device
LDMOS enables RF lighting
` Unprecedented ruggedness
` Low thermal resistance for reliable operation
` Consistent device performance
` Broadband device for flexible use
NXP's 50 V high-voltage LDMOS process enables highest power at
the extreme ruggedness levels necessary for this kind of application.
BLF578: 1200 W CW operation - highest power LDMOS
38
NXP Semiconductors RF Manual 16th edition
1.6.5 Medical imaging
Looking for more information on medical applications?
See section 2.5.1 Medical applications driven by RF power: From imaging
to cancer treatment, a flexible and versatile technology in the doctor’s toolbox
Application diagram
Magnet
X GRADIENT
Gradient coils
RF coils
AMPLIFIER
Y GRADIENT
AMPLIFIER
WAVEFORM
GENERATOR
Z GRADIENT
AMPLIFIER
RF amplifier
RF
ADC
COMPUTER
ELECTRONICS
IMAGE
DISPLAY
brb434
Recommended products
Function
Product
fmin (MHz)
fmax (MHz)
P1dB (W)
Package
Type
1
10
1
10
10
10
10
10
688
700
700
2400
2400
2400
2400
2500
500
1000
500
500
500
12
20
SOT975
SOT467C
SOT467
SOT502
SOT539A
SOT539
SOT539A
SOT539
SOT502
SOT502
SOT502
SOT502
SOT539
SOT502
SOT539
BLF25M612(G)*
BLF571
BLF871(S)
BLF573(S)
BLF574
BLF574XR(S)*
BLF578
BLF578XR(S)
BLF6G10(LS)-200RN
BLF6G10(LS)-135RN
BLF6G10(LS)-160RN
BLF2425M7L(S)140
BLF2425M6L(S)180P*
BLF2425M7L(S)200*
BLF2425M7L(S)250P
Driver
100
300
600
600
1200
1400
200
135
160
140
180
200
250
500
500
HPA
Final
1000
1000
1000
2500
2500
2500
2500
* Check status in section 3.1, as this type is not yet released for mass production
Product highlight:
Features
` Best broadband efficiency
` Highest power (density) devices
` Unrivalled ruggedness
LDMOS in emerging medical applications
NXP’s line of 50 V high-voltage LDMOS devices enables highest
power output and features unequalled ruggedness for pulsed
operation in MRI and NMR applications. The high power densities
enable compact amplifier design.
` Consistent device performance
NXP Semiconductors RF Manual 16th edition
39
1.7 Aerospace and defense
1.7.1 Microwave products for L- and S-band radar and avionics applications
Application diagram
RF signals
video, timing, bias voltage,
control and data
I-f signals
RF small signal
ANTENNA
DRIVE
RF POWER BOARD
MPA HPA ISOLATOR
RF power
mixer
PLL VCO
local oscillator
VGA
duplexer
local oscillator signal
DISPLAY
WAVEFORM
GENERATOR
PLL VCO
AND
CONTROL
control and timing
mixer
DETECTOR
video
LNA
IF amplifier
brb410
Recommended products
Function
Product
fmin (MHz)
fmax (MHz)
P1dB (W)
VDS (V)
η
D (%)
Gp (dB)
Package
Type
500
1030
1030
2700
2700
3100
400
500
960
960
1030
1030
1200
1200
1200
2700
2700
2900
3100
3100
1400
1090
1090
3100
3500
3500
1000
1400
1215
1215
1090
1090
1400
1400
1400
3100
2900
3300
3500
3500
25
10
2
6
30
50
36
36
32
32
32
50
50
36
50
28
48
36
50
50
32
32
32
32
32
50
40
-
19
16
16
15
13
15.5
20
17
13.5
17
20
SOT467C
SOT467C
SOT538A
SOT975C
SOT1135
SOT608
BLL6H0514-25
BLA1011-10
BLA1011-2
BLS6G2731-6G
Driver
33
50
45
57
50
50
50
65
52
45
50
55
50
50
47
43
43
BLS6G2735L(S)-30
BLS6G3135(S)-20
BLU6H0410L(S)-600P
BLL6H0514L(S)-130
BLA0912-250R
BLA6H0912-500
BLA6G1011LS-200RG
BLA6H1011-600
BLL6G1214L-250
BLL6H1214-500
BLL6H1214L(S)-250
BLS6G2731S-130
BLS7G2729L(S)-350P
BLS7G2933S-150
BLS6G3135(S)-120
BLS7G3135L(S)-350P*
20
600
130
250
500
200
600
250
500
250
130
350
150
120
350
SOT539
SOT1135
SOT502A
SOT634A
SOT502
SOT539A
SOT502A
SOT539A
SOT502
SOT922-1
SOT539
SOT922-1
SOT502
HPA
17
15
17
17
Final
12
13.5
13.5
11
10
SOT539
* Check status in section 3.1, as this type is not yet released for mass production
Product highlight:
Features
` Easy power control
BLS7G2729L-350P LDMOS S-band radar power transistor
` Integrated ESD protection
` High flexibility with respect to pulse formats
` Excellent ruggedness
` Excellent thermal stability
Designed for S-band operation (2.7 to 2.9 GHz), this internally
matched LDMOS power transistor for rader applications delivers an
output power of 350 W and a power gain of 13.5 dB at an efficiency
of 50 %.
40
NXP Semiconductors RF Manual 16th edition
Function
Product
RF transistor
Package
Type
BFU710F
BFU725F/N1
BFU730F
LNA (low-noise
amplifier) & Mixer
SiGe:C transistor
SOT343F
Function
Product
Package
Type
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
BGM1014
BGM1013
BGM1012
MMIC
IF amplifier
MMIC
SOT363
General-purpose
wideband
amplifiers
Function
Product
RF IC
Package
Type
TFF1003HN
TFF1007HN
TFF11xxxHN^
PLL/VCO
LO generator
SiGe:C IC
SOT616
Function
Product
MMIC
Gain range
Package
Type
BGA7210
BGA7204
Single VGA (variable-
gain amplifier)
31 dB
SOT617
Function
Product
MMIC
Gain range
Package
Type
24 dB
28 dB
BGA7350
BGA7351
Dual VGA (variable-
gain amplifier)
SOT617
Function
Product
PL (1 dB)@ 940 MHz
Package
Type
24 dBm
28 dBm
25 dBm
28 dBm
30 dBm
BGA7024
BGA7027
BGA7124
BGA7127
BGA7130
SOT89
MPA
(medium power
amplifier)
MMIC
SOT908
^ 17 different types with LO ranges: 7-15 GHz, see 3.4.4
Product highlight:
Features
` No output inductor necessary when used at the output stage
` Internally matched to 50 Ω
BGA28xx-family of IF gain blocks
` Reverse isolation > 30 dB up to 2 GHz
` Good linearity with low second order
The BGA28xx IF gain blocks are silicon Monolitic Microwave
Integrated Circuit (MMIC) wideband amplifiers with internal
matching circuitry in a 6-pin SOT363 plastic SMD package.
NXP Semiconductors RF Manual 16th edition
41
2.ꢀ Focusꢀapplications,ꢀproductsꢀ&ꢀtechnologies
2.1ꢀWirelessꢀcommunicationꢀinfrastructure
2.1.1ꢀ ꢀBuildꢀaꢀhighlyꢀefficientꢀsignalꢀchainꢀwithꢀRFꢀcomponentsꢀforꢀtransmitꢀline-upsꢀandꢀreceiveꢀchains
As a global leader in RF technology and component design, NXP Semiconductors offers a complete
portfolio of RF products, from low- to high-power signal conditioning that delivers advanced performance
and helps simplify your design and the development process. Our solutions range from discrete devices to
modular building blocks, so you can design a highly efficient signal chain.
State-of-the-art QUBiC4
Application diagram of base station
NXP’s industry-leading QUBiC4 technology, available since
2002, has been widely deployed in the field and offers
more consistent parameter performance compared to GaAs
technology. It speeds the migration from GaAs to silicon and
delivers more functionality in less space. High integration
reduces the design footprint and enables more cost-
competitive designs. It also improves reliability and offers
significant savings in manufacturing expenditures.
(all cellular standards and frequencies)
The block diagram below shows base station transmit (upper
part, Tx) and receive (lower part, Rx) functions, and includes
the Tx feedback function (middle part, Tx feedback).
IQ-Modulator
I
Power Amplifier
DVGA RF-BP
MPA
HPA
PLL
VCO
Dual
DAC
0
90
Transmitter
Mixer+LO
Q
IF-SAW
DVGA
Digital
Front
End
Tower -
Mounted
Amplifier
JEDEC
IF
Att.
ADC
TX / RX1
Tx
DPD
CFR
DUC
DDC
LO
LNA +VGA
RF-SAW
Rx
µC
RX2
Dual
DVGA
PLL
VCO
Dual
ADC
Dual
Mixer
BP or LP
IF-SAW
LNA
Filter Unit
LNA+VGA
Clock
Generator
Jitter Cleaner
Data Converter
RF Small Signal
RF Power
Micro Controller
Digital wideband VGAs with high linearity & flexible
current settings
The unique power-save mode can effectively reduce the current
consumption in TDD systems up to 45%. The BGA7210 adds
flexible current distribution across its two amplifiers, depending
on the attenuation state, to save current.
These 6-bit digital VGAs (BGA7204 & BGA7210) offer high
linearity (35 dBm @ 2.2-2.8 GHz) and high output power
(23 dBm @ 2.2-2.8 GHz) across a large bandwidth without
external matching. Smart routing with no connection crosses
simplifies design and decreases footprint by 25%.
42
NXP Semiconductors RF Manual 16th edition
Dual digital IF VGAs
IQ modulators
The BGA7350 and BGA7351 are dual, independently controlled
receive IF VGAs that operate from 50 to 250 MHz. Integrated
matching improves performance in the receiver chain, because
the VGA can drive the filter directly into the analog-to-digital
converter to ensure a constant input level. The BGA7350 has a
gain range of 24 dB, while the BGA7351 has a range of 28 dB.
For both devices, the maximum gain setting delivers at least
16 dBm output power at 1 dB gain
The BGX7100 and BGX7101 devices combine high performance,
high linearity I and Q modulation paths for use in radio
frequency up-conversion. It supports RF frequency outputs in
the range from 400 to 4000 MHz. The BGX710x IQ modulator
is performance-independent of the IQ common mode voltage.
The modulator provides a typical output 1 dB compression point
(PL(1dB)) value of 12 dBm and a typical 27 dBm output third-
order intercept point (IP3O). Unadjusted sideband suppression
and carrier feed through are 50 dBc and −45 dBm respectively.
A hardware control pin
compression (P1dB). For gain control,
each amplifier uses a separate digital
gain-control code, which is provided
provides a fast power-down/
externally through two sets of five
power-up mode functionality
bits. The resulting gain flatness
which allows significant
is 0.1 dB.
power saving. The BGX7101
is 4 dB higher gain compared
Medium power amplifier
to the BGX7100.
The NXP MPAs (BGA7x2x/BGA7x3x) are based on a one-stage
amplifier, available in a low-cost surface-mount package.
It delivers a set of available output power from 24 to 30 dBm.
All cover the frequency range from 400 to 2700 MHz.
Dual mixers
The BGX722x device combines a pair of high-performance,
high-linearity down-mixers for use in receivers having a common
local oscillator (e.g. having main and diversity paths). Each mixer
provides an input 1 dB compression point
(P1dB) above 13 dBm, with an input third-
order intercept point (IIP3) of 26 dBm.
Low-noise amplifiers up to 2.8 GHz
Designed for high linearity and low noise, these monolithic
SiGe:C BiCMOS LNAs (BGU7051, BUG7052 & BGU7053) deliver
18-24 dB gain, 3-5 dB more gain than equivalents, along with
low power consumption. The RF input power overdrive of
20 dBm and the high ESD protection
(HBM 4 kV; CDM 2 kV) make these
The small-signal noise figure (NF) is below
10 dB whereas under large signal blocking
conditions the NF is typically 19 dB.
Isolation between mixers is at least 40
devices extremely rugged.
Integrated biasing circuitry,
Synthesizer with an integrated VCO (LO generator)
The BGX7300 is a low phase noise wideband synthesizer
with an integrated VCO which allows the implementation of
an integer-N or fractional-N Phase-Locked Loop (PLL). The
integrated voltage controlled oscillator (VCO) supports a
fundamental frequency range from 2.2 GHz up to 4.4 GHz.
The BGX7300 has dual differential RF outputs, each with output
power up to +5 dBm. The VCO frequency can by divided by
1/2/4/8/16/32 before being fed to the RF outputs. Hence the
generated output frequency can be as low as 68.75MHz. For
isolation purpose, each RF output can be muted or forced into
power-down mode using a hardware pin or SPI sofware control.
A dedicated differential input stage lets the BGX7300 work with
3.3 V supply voltage and low
external component count (only
6 capacitors) ensures easy system
integration.
Integrated base station LNAs with lowest NF for
the complete LNA chain
NXP provides the industry’s only fully Integrated base station
LNA that can be tailored to the needs of individual OEMs for
optimal fit in their Rx line-ups. By integrating three stages in
one monolithic design, these SiGe:C BiCMOS LNAs (BGU706x)
deliver the industry’s lowest noise figure for a receive chain
(0.9 dB), while saving up to 80% in component cost. Additionally, an external VCO. Most of the characteristics are programmable
the analog gain control up to 35 dB, RF input power overdrive
of 10-15 dBm, and high linearity (0.9-2.5 dBm IP3I at maximum
gain) make them very suitable in small cell sizes.
via a 3- or 4-wire Serial Peripheral Interface bus (SPI). Each VCO
is powered from an internally regulated voltage source providing
sufficient power supply rejection. The device is designed to
operate from 3.3 V nominal supply voltage connected to the
supply pins.
Selection guides of the listed components are available
in Chapter 3 (3.4.1 & 3.4.2).
NXP Semiconductors RF Manual 16th edition
43
2.1.2ꢀ DigitalꢀwidebandꢀVGAsꢀwithꢀhighꢀlinearityꢀ&ꢀflexibleꢀcurrentꢀsettingsꢀ
NXP digital VGAs BGA7204 & BGA7210
These 6-bit digital VGAs offer high linearity (35 dBm @ 2.2-2.8 GHz) and high output power
(23 dBm @ 2.2-2.8 GHz) across a large bandwidth without external matching. Smart routing with no
connection crosses simplifies design and decreases footprint by 25%. The unique power-save mode
can effectively reduce the current consumption in TDD systems up to 45%. The BGA7210 adds flexible
current distribution across its two amplifiers, depending on the attenuation state, to save current.
Key features
Applications
`Internally matched for 50 Ω
- BGA7204 = 0.4 to 2.75 GHz
- BGA7210 = 0.7 to 3.8 GHz
`High maximum power gain
- BGA7204 = 18.5 dB
`GSM, W-CDMA, WiMAX, LTE base stations
`Wireless point-to-point and repeaters
`Cable modem termination systems
`Temperature-compensation circuits
- BGA7210 = 30 dB
`High output third-order intercept, IP3O
- BGA7204 = 38 dBm
- BGA7210 = 39 dBm
`Attenuation range of 31.5 dB, 0.5 dB step size (6 bit)
`High output power, PL(1dB)
- BGA7204 = 21 dBm
- BGA7210 = 23 dBm
OM7921 – BGA7210 customer evaluation kit
(also available OM7922 – BGA7204 CEK)
`Fast switching power-save mode (power down pin)
`Digitally controlled current setting from 120 to 195 mA with
an optimum at 185mA (BGA7210 only)
`Simple control interfaces
- BGA7204 SPI and parallel
- BGA7210 SPI
`ESD protection on all pins (HBM 4 kV; CDM 2 kV)
`HVQFN32 (5 x 5 x 0.85 mm)
Key benefits
`Wideband operation supports platforms with multiple
frequency ranges
`Smart lead routing produces simpler design, decreases
footprint by 25%
`Power-save mode can reduce current consumption in
TDD systems up to 45%
`Flexible current setting (BGA7210) saves power
`Monolithic design enables high quality
44
NXP Semiconductors RF Manual 16th edition
The NXP BGA7204 and BGA7210 are monolithic digital
variable-gain amplifiers (VGAs) that operate over an extremely
wide range with high linearity and high output power.
The BGA7210 builds on the BGA7204 by adding flexible
current setting across its two amplifiers, depending on the
attenuation state. The serial peripheral interface is used to set
the attenuation state, and, using a similar method, to set the
current through the first and second amplifiers. The desired
configuration is set by software and enables current savings of
as much as 75 mA.
Designed for the transmit path of wireless architectures, these
VGAs can be used to control the power level to the power
amplifier. The up-converted signals are fed to the VGA, and
thus help compensate for variations in cell load and the
presence of aging infrastructure equipment.
Higher output power, higher peak gain, and smaller attenuator
step sizes enable engineers to use fewer components and
The BGA7204 operates in the range between 0.4 and 2.75 GHz, provide greater control to maintain and optimize performance
while the BGA7210 operates between 0.7 and 3.8 GHz. By
supporting more than 2 GHz of bandwidth, these devices can
be used to populate several frequency bands.
in the transmit chain.
Smart routing (with no connection crosses) reduces the number
of board connections, simplifies design-in, and decreases the
design footprint by 25%. The monolithic design increases
reliability and ensures high quality.
An integrated power-save mode makes it possible to reduce
consumption even more, to just 15 mA during a receive slot.
This can effectively reduce the current consumption in Time
Division Duplexing (TDD) systems up to 45%.
Schematic of BGA7210 evaluation board (OM7921)
V
SUP
C23
L1
C22
C26
C25
C24
C12
PUPMXG/
C14
V
V
CC1
DDD
PWRDN
CLK SERIN SS SEROUT
24
23
22
21 20
19
17
V
DDA
16
C18
C17
V
CC2
15
L2
C27
C1
RF_IN
RF_OUT
29
12
RF_OUT
Csh
aaa-000665
Digital VGAs
Gpꢀ@ꢀ
frange
[min]
(MHz)
frange
[max]
(MHz)
@ꢀICC
[typ]
(mA)
Attenuationꢀ
range
IP3O
[typ]
(dBm)
PL(1dB)
[typ]
(dBm)
NF
[typ]
(dB)
Typeꢀ
number
@ꢀVCC
(V)
minimumꢀꢀ
attenuation
(dB)
Package
(dB)
400
700
700
5
5
5
5
5
5
5
5
5
115
115
115
115
185
185
185
185
185
18.5
18.5
17.5
16.5
30.0
29.5
29.0
28.0
26.0
31.5
31.5
30.5
30.0
31.5
31.5
31.5
30.5
29.5
38.0
37.5
36.0
34.0
39.0
37.0
35.0
35.0
27.0
21.0
21.0
20.5
20.0
21.0
21.0
21.0
23.0
19.0
7.0
6.5
6.5
7.0
6.5
6.5
6.5
7.0
8.0
1450
2100
2750
1400
1700
2200
2800
3800
BGA7204
SOT617-3
SOT617-3
1450
2100
700
1400
1700
2200
3400
BGA7210
NXP Semiconductors RF Manual 16th edition
45
2.1.3ꢀ Dohertyꢀamplifierꢀtechnologyꢀforꢀstate-of-the-artꢀwirelessꢀinfrastructure
Best-in-class PA designs enable considerable energy savings
NXP’s latest power amplifier designs let the wireless infrastructure run with significantly higher energy
efficiency – towards “Green Base Stations”. In order to achieve the highest efficiencies currently possible,
NXP combines its latest generations of LDMOS technology (Gen7 & 8) with the Doherty concept. The high
performance of our LDMOS technology, matched with the efficiency of the Doherty technology, creates
power amplifiers that offer high efficiency and high gain, are easily linearizable, and are more cost-effective
to operate.
Developed by W.H. Doherty in 1936, the Doherty amplifier remained largely unused because the dominant
mobile communication system modulation techniques (FM, GMSK, and EDGE) did not require high peak-to-
average ratio (PAR) signals. For today's base stations, however, transmitting 3G, 4G, and multi-carrier signals
makes the high power and added efficiency of the Doherty approach the preferred option for most service
providers.
NXP’s Doherty designs ensure high efficiency while maintaining a very similar peak power capability of two
transistors combined. The input and output sections are internally matched, benefiting the amplifiers with
high gain, good gain flatness, and phase linearity over a wide frequency band.
Key features & benefits
Integrated Doherty
`Contains splitter, main and peak amplifier, delay lines,
NXP offers the world’s first fully integrated Doherty designs.
and combiner in one package
From the outside these devices look like ordinary transistors.
- 40% efficiency @ 10 W average power
In fact, they are completely integrated Doherty amplifiers that
- No additional tuning in manufacturing
readily deliver the associated high efficiency levels for base
`Design is as easy as with a single Class AB transistor
station applications. With the ease of design-in of an ordinary
`Ideally suited for space-constrained applications
Class AB transistor, they also provide significant
(e.g. remote radio heads, antenna arrays)
space and cost savings.
`Currently available for TD-SCDMA (BLD6G21L(S)-50) and
W-CDMA (BLD22L(S)-50); see section 3.7.1.4 for details
46
NXP Semiconductors RF Manual 16th edition
Discrete Doherty amplifiers
Key features & benefits
In addition to the integrated versions, NXP offers product
`Most efficient Doherty amplifier designs available to date
demonstrators for very efficient, high-power, discrete two- and `Production-proven, consistent designs
three-way Doherty amplifiers. The two-way designs, based on
the BLF7G22LS-130 device, deliver 47.0 dBm (50 W) with 43%
efficiency and 15.7 dB gain for W-CDMA applications.
`NXP’s LDMOS provides unsurpassed ruggedness
`Currently available for the following frequency bands:
- 728 to 821 MHz
- 869 to 960 MHz
- 1805 to 1880 MHz (DCS)
- 1930 to 1990 MHz (PCS)
- 1880 to 2025 MHz (TD-SCDMA)
- 2110 to 2170 MHz (UMTS / LTE)
- 2300 to 2400 MHz (WiBRO / LTE)
- 2500 to 2700 MHz (WiMAX / LTE)
- 3300 to 3800 MHz (WiMAX)
All of our product demonstrators are supported by
comprehensive documentation and hardware.
Please see section 3.7.1.8 for a complete list of available
designs.
Our flagship three-way Doherty demonstrator achieves
48% efficiency at 48 dBm (63 W) average output power and
15.0 dB gain with a two-carrier W-CDMA signal. The current
design covers the W-CDMA standard for band 1 operation
and is tailored towards high-yield, minimum-tuning, volume
manufacturing.
Power LDMOS Doherty designs
Freqꢀbandꢀ
(MHz)
PPEAKꢀ
(dBm)
POUT-AVGꢀ
(dBm)
VDSꢀ
(V)
Gainꢀ
(dB)
DrainꢀEff.ꢀ
(%)
Type
Mainꢀtransistor
Peakꢀtransistor
869-894
59.2
57.3
56.6
58.6
58.2
52.2
56.5
57.2
56.8
55.2
50.4
49.3
48.6
51
28
30
28
28
28
28
28
28
30
30
16
16
52
50
42
3-WAY
ASYM
SYM
BLF7G10LS-250
BLF8G10LS-160
BLF7G15LS-200
BLF7G20LS-200
BLF7G20LS-250P
1/2 BLF7G21LS-160P
BLF7G22LS-160
BLF7G22LS-160
BLF7G24LS-100
BLF7G27LS-100
2x BLF7G10LS-250
BLF7G10LS-250
920-960
1526-1555
1805-1880
1930-1990
2010-2025
2110-2170
2110-2170
2300-2400
2620-2690
18.4
16
BLF7G15LS-200
47.6
40
43
46
47
3-WAY
SYM
2x BLF7G20LS-200
BLF7G20LS-250P
1/2 BLF7G21LS-160P
BLF7G22LS-200
50
16
44
15.6
14.2
16
SYM
49
ASYM
3-WAY
3-WAY
ASYM
49.2
48.5
47.2
2x BLF7G22L(S)-160
2x BLF7G24LS-100
BLF7G27LS-140
15
42
15
41
NXP Semiconductors RF Manual 16th edition
47
2.1.4ꢀ TheꢀnewꢀgenerationꢀofꢀLDMOSꢀRFꢀpowerꢀforꢀwirelessꢀinfrastructures:ꢀNXP'sꢀGen8ꢀ
NXP announced last year the 8th generation of its renowned RF power device portfolio for base stations.
Listening carefully to the world’s leading infrastructure providers and understanding their requirements, we
took a holistic approach to the development of Gen8. This means that we scrutinized every detail of a power
transistor and reconsidered the entire “transistor system” to ceate a new generation that performs markedly
better than its predecessors, and its competitors, and again sets standards for the industry.
Gen8 addresses the key trends in the wireless
infrastructure industry
Gen8 is the answer to all these often conflicting requirements.
The package and die design, as well as the input and output
match structures, have been optimized to enable wideband,
affordable, compact, multi-standard, and highly efficient
Doherty power amplifiers. Solutions for all cellular frequency
bands are currently being sampled and are in production or
will be released throughout 2012.
`Increasing signal bandwidths up to 100 MHz to enable
full-band operation
`Cost sensitivity: peak powers up to 270 Watts in SOT502-
sized packages
`Reduction in the size/weight/volume of the cabinet
`The ongoing need for greater electrical efficiency to reduce
cooling requirements and operational expenditures
`Ever-increasing output power
`The need to deploy multi-standard and future-proof
solutions
The first wave of Gen8 transistors
fmin
(MHz)
fmax
(MHz)
P1dBꢀ
(W)
Plannedꢀ
release
Type
Matching
Package
Description
Gen8 ceramic LDMOS transistor for GSM, WCDMA &
LTE applications
Gen8 ceramic LDMOS transistor for GSM, WCDMA &
LTE applications
Gen8 ceramic LDMOS transistor for GSM, WCDMA &
LTE applications (gull-wing)
Gen8 ceramic LDMOS transistor for GSM, WCDMA &
LTE applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for GSM,
WCDMA & LTE applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for GSM,
WCDMA & LTE applications (gull-wing)
Gen8 ceramic LDMOS transistor for GSM & LTE
applications
Gen8 ceramic LDMOS transistor for GSM & LTE
applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for GSM &
LTE applications (gull-wing)
Gen8 ceramic LDMOS transistor for WCDMA & LTE
applications
Gen8 ceramic LDMOS transistor for WCDMA & LTE
applications (gull-wing)
Gen8 ceramic LDMOS transistor for WCDMA & LTE
applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for
WCDMA & LTE applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for
WCDMA & LTE applications
Gen8 ceramic LDMOS transistor for WCDMA & LTE
applications (gull-wing)
Gen8 ceramic LDMOS transistor for WCDMA & LTE
applications
Gen8 ceramic push-pull LDMOS transistor for
WCDMA & LTE applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for
WCDMA & LTE applications (gull-wing)
BLF8G10L(S)-160
920
700
960
160
160
200
270
300
400
200
270
270
160
200
270
400
200
140
140
200
280
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
SOT502
SOT1244
Released
Released
Q412
BLF8G10L(S)-160V
BLF8G10LS-200GV
BLF8G10LS-270GV
BLF8G10L(S)-300P
BLF8G10LS-400PGV
BLF8G20L(S)-200V
BLF8G20LS-270GV
BLF8G20LS-270PGV
BLF8G22LS-160BV
BLF8G22LS-200GV
BLF8G22LS-270GV
BLF8G22LS-400PGV
BLF8G24L(S)-200P
BLF8G27LS-140G
BLF8G27LS-140V
1000
1000
1000
960
700
SOT1244C
SOT1244C
SOT539
700
Q412
850
Q312
700
1000
2000
2000
2000
2200
2200
2200
2200
2400
2700
2700
2700
2700
SOT1242C
SOT1120
Q412
1800
1800
1800
2000
2000
2000
2000
2300
2500
2600
2500
2500
Released
Q412
SOT1244C
SOT1242C
SOT1120B
SOT1244C
SOT1244C
SOT1242C
SOT539
Q412
Released
Q312
Q312
Q312
Q312
SOT502E
SOT1244B
SOT1242C
SOT1242C
Q412
Q412
BLF8G27LS-200PGV
BLF8G27LS-280PGV
Q412
Q412
Note: All devices are internally matched (I/O)
48
NXP Semiconductors RF Manual 16th edition
2.2ꢀBroadbandꢀcommunicationꢀinfrastructure
2.2.1ꢀ Connectingꢀpeople,ꢀprotectingꢀyourꢀnetwork:ꢀNXP'sꢀCATVꢀC-familyꢀforꢀtheꢀChineseꢀ
SARFTꢀstandard
Specially designed for the Chinese Hybrid Fiber Coax (HFC) infrastructure, NXP's CATV C-family offers a
total solution for cable TV networks. It is both flexible enough for connecting rural communities as part of
China’s "Connecting to Every Village" program and powerful enough for upgrading major cities from analog
to high-end digital services. All C-type devices are compliant with the Chinese State Administration for Radio,
Film and Television (SARFT) standard, and cover most HFC applications in the 550 MHz to 1 GHz range.
Products
The BGY588C, BGE788C and BGD712C devices cover
the frequency range from 550 MHz to 750 MHz. Extending
the C-family portfolio into the high-end segment, the
CGD944C, CGD942C, CGY888C and BGO807C operate
between 40 and 870 MHz and have been specifically tested
under Chinese raster conditions. Manufactured using our GaAs
HFET die process, the CGD942C and CGD944C are high-gain,
high-performance 870 MHz power doublers. The CGD982HCi,
CGD985HCi and CGD987HCi operate from 40 to 1003 MHz
and are specified for 870 MHz and 1 GHz. These power
doublers are optimized for the Chinese SARFT standard. They
are capable of satisfying the demanding requirements of top-
end applications, including high-power optical nodes.
`BGY588C, BGE788C and CGY888C push-pull amplifiers
`BGD712C, CGD944C, CGD942C, CGD982HCi, CGD985HCi
and CGD987HCi power doublers
`BGO807C, BGO807CE optical receivers
Benefits
`Compliant with Chinese SARFT HFC networks standard
`Transparent cap allows confirmation of product authenticity
`Rugged construction
`Highest by Design internal ESD protection
Features
`Excellent linearity, stability, and reliability
`High power gain
Our GaAs HFET MMIC dies are designed to provide the best
ESD protection levels, without the external TVS components
normally used with GaAs pHEMT devices.
`Extremely low noise
`Silicon nitride passivity
`GaAs HFET dies for high-end devices
All CATV C-type devices feature a transparent cap that makes
it easy to distinguish them from counterfeit products.
C-family application information
NXPꢀC-familyꢀbyꢀapplication
CGD982HCi
BGO807C
CGD942C
CGD944C
Application
BGY588C
BGE788C
CGY888C
BGD712C
CGD985HCi
CGD987HCi
BGO807CE
Optical node
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Optical receiver
Distribution amplifier
Line-extender amplifier
Terminating amplifier
•
•
•
•
•
NXP Semiconductors RF Manual 16th edition
49
BGY588C, BGE788C, and CGY888C
The last stage of an HFC network structure is called
IN
OUT
port
a ‘terminating amplifier‘ or, since it's close to the subscriber, a
"user amplifier." terminating amplifier requires a single module
such as the BGY588C for 550 MHz, the BGE788C for 750 MHz
and the CGY888C for 870 MHz systems. These modules fit
perfectly in the Chinese "Connecting to Every Village" projects.
PAD
EQ
port
BGY588C
BGE788C
CGY888C
bra820
BGD712C
The BGD712C is a 750 MHz, 18 dB power doubler module.
It has been designed for 750 MHz optical nodes including
ordinary or optical receivers and distribution amplifiers.
It can also be used in line-extender amplifiers together with
a 750 MHz push-pull module, such as the BGY785A or the
BGY787. As such it can be used widely in Chinese "Connecting
to Every Village" projects.
IN
OUT
port
PAD
EQ
port
BGY785A
BGY787
BGD712C
bra821
CGD944C and CGD942C
Our full GaAs power doubler modules, the CGD942C and
the CGD944C offer high output power and better CTB
and CSO than other modules. Designed for high-end HFC
networks containing optical nodes with multiple out-ports,
these modules enable each port to directly cover at least
125 subscribers. These two devices are ideal when used in
upgrading HFC networks to 870 MHz.
CGD94xC / CGD98xHCi
PAD
OUT
port 1
H
L
CGD94xC / CGD98xHCi
PAD
OUT
port 2
H
L
EQ
PAD
CGD94xC / CGD98xHCi
BGO807C
BGO807CE
PAD
OUT
port 3
RF switch
H
L
(N + 1)
CGD982HCi, CGD985HCi, and CGD987HCi
CGD94xC / CGD98xHCi
Our newest GaAs power doubler modules, the CGD982HCi,
the CGD985HCi and the CGD987HCi are customized designs
for CATV hybrid fiber coax Chinese networks operating in the
40 to 1003 MHz bandwidth, and specified with the Chinese
cable TV network official loading raster on top of the
traditional NTSC loading rasters. For use in optical notes for
fiber deep applications where the output power level needs
to be at its highest.
PAD
OUT
BGO807C
H
L
port 4
BGO807CE
bra822
BGO807C
The BGO807C is an integrated optical receiver module that
provides high output levels with integrated temperature-
compensated circuitry. In an optical node design, the
BGO807C enables a high performance / price ratio
and ruggedness. When upgrading an HFC network from
analog to digital, the BGO807C is the perfect fit.
BGD812
PAD
PAD
OUT
H
L
port 1
PAD
EQ
BGD812
BGO807C
BGO807CE
BGY885A
OUT
H
L
port 2
bra823
50
NXP Semiconductors RF Manual 16th edition
Connecting people, protecting your network
NXP CATV C-family for the Chinese SARFT standard
Push-pull amplifiers
Parameters
BGY588C
BGE788C
CGY888C
Power gain (dB)
Typ
Range
Max
34.5
0.2 - 1.7
-57
34.2
0.3 - 2.3
-49
35.5
1.5 typ.
-68 typ.
-66 typ.
4 typ.
Slope cable equivalent (dB)
Composite triple beat (dB)
Composite 2nd order distortion (dB)
Noise (@ fmax) (dB)
Max
-62
-52
Max
8
8
Total current consumption (mA)
Frequency range (MHz)
Typ
325
305
280
Range
40 - 550
40 - 750
40 - 870
Power doublers
Parameters
BGD712C
CGD942C
CGD944C
CGD982HCi
CGD985HCi
CGD987HCi
Power gain (dB)
Typ
Range
Max
18.5
0.5 - 1.5
-62
23
1 - 2
25
1 - 2
23
0.5 - 2
-66
24.5
0.5 - 2
-66
27
0.7 - 2
-66
Slope cable equivalent (dB)
Composite triple beat (dB)
Composite 2nd order distortion (dB)
Noise (@ fmax) (dB)
-66 typ.
-66 typ.
5
-66 typ.
-66 typ.
5
Max
-63
-69
-69
-66
Max
7
5.5
5.5
5.5
Total current consumption (mA)
Frequency range (MHz)
Typ
395
450
450
440
440
440
Range
40 - 750
40 - 870
40 - 870
40 - 1003
40 - 1003
40 - 1003
Optical receiver
Parameters
BGO807C
BGO807CE
Responsivity (Rmin
)
Min
Range
Max
800
0 - 2
-71
800
0 - 2
-69
Slope cable equivalent (dB)
Composite triple beat (dB)
Composite 2nd order distortion (dB)
Noise (@ fmax) (dB)
Typ
-54
-53
Max
8.5
8.5
Total current consumption (mA)
Frequency range (MHz)
Connector
Typ
190
190
Range
40 - 870
40 - 870
- / SC0 / FC0
NXP Semiconductors RF Manual 16th edition
51
2.2.2ꢀ Highlyꢀefficientꢀline-upꢀofꢀ1ꢀGHzꢀGaAsꢀmodulesꢀforꢀsustainableꢀCATVꢀnetworks
NXP high gain power doublers CGD104xHi and push-pulls CGY104
Designed for 1 GHz “sustainable networks,” these high-performance GaAs devices enable extended
bandwidth and higher data rates. They deliver increased network capacity and make way for high-end
services like HDTV, VoIP, and digital simulcasting.
New CATV GaAs platform layout
Key features
`Excellent linearity, stability, and reliability
`High power gain for power doublers
`Extremely low noise
The NXP power doublers CGD104xH and CGD104xHi are ideal
for use in line extenders and trunk amplifiers. They support
fiber deep-optical-node applications (N+0/1/2), delivering
the highest output power on the market today. The GaAs HFET
die process delivers high gain, excellent CTB and CSO ratings,
and lower current.
`Dark Green products
`GaAs HFET dies for high-end applications
`Rugged construction
`Superior levels of ESD protection
`Integrated ringwave protection
`Design optimized for digital channel loading
`Temperature compensated gain response
`Optimized heat management
The new NXP CGY104x push-pull family is the first line-up on
the market to combine very low noise, best-in-class distortion
parameters, and low, “carbon footprint” capabilities. It delivers
the best performance for the lowest power consumption,
so it reduces OPEX and CO2 emissions
`Excellent temperature resistance
Key benefits
All of NXP’s 1 GHz solutions are designed for durability and
offer superior ruggedness, an extended temperature range,
high-power overstress capabilities, and extremely high ESD
levels. As a result, they also reduce the cost of ownership.
`Simple upgrade to 1-GHz capable networks
`Low total cost of ownership
`High power-stress capability
`Highly automated assembly
The GaAs die is inserted in an HVQFN package that is then
mounted on thermal vias that manage heat transfer to the
heat sink. Temperature-control circuitry keeps the module's
high performance stable over a wide range of temperature.
Assembly is fully automated and requires almost no human
intervention, so repeatability remains very high.
Key applications
`Hybrid Fiber Coax (HFC) applications
`Line extenders
`Trunk amplifiers
`Fiber deep-optical-node (N+0/1/2)
`Bridgers
52
NXP Semiconductors RF Manual 16th edition
Upcoming products
Additional push-pulls, currently under development, will
extend the capabilities of the power doublers even further,
supporting almost all modern HFC applications. The push-pull
CGY1041 will deliver a gain of 21 dB, the CGY1043 a gain of
23 dB, the CGY1049 a gain of 29 dB and the CGY1032 a gain of
32 dB. NXP is also developing a new, highly integrated power
doubler. The CGD1046Hi will deliver, in one IC, a 26 dB power
gain with 60 dBmV output power and excellent ESD protection,
for the ultimate in high-quality, distortionless devices.
CATV 1 GHz power doublers
CATVꢀ1ꢀꢀGHzꢀpowerꢀdoublers
Parameters
CGD1040Hi
CGD1042H
CGD1042Hi
CGD1044H
CGD1044Hi
CGD1046Hi
Power gain (dB)
Typ
21
1.5
23
1.5
23
1.5
25
25
1.5
27
0.5 - 2.0
-73
Slope cable equivalent (dB)
Composite triple beat (dB)
Composite 2nd order distortion (dB)
Noise (@ fmax) (dB)
Typ
1
-69
Typ
-69
-69
-69
-69
Typ
-68
-68
-68
-68
-68
-68
Max
Typ
6
6
6
6
6
5
Total current consumption (mA)
Frequency range (MHz)
440
450
440
450
440
460
40 - 1003
40 - 1003
40 - 1003
40 - 1003
40 - 1003
40 - 1003
Range
CATV 1 GHz push-pulls
CATVꢀ1ꢀGHzꢀpush-pulls
Parameters
CGY1041
CGY1043
CGY1047
CGY1049
CGY1032
Power gain (dB)
Typ
22
24
28
2
30
1.6
33
1.8
Slope cable equivalent (dB)
Composite triple beat (dB)
Composite 2nd order distortion (dB)
Noise (@ fmax) (dB)
Typ
2
-62
2
-62
Typ
-64
-62
-62
Typ
-64
-64
-66
-64
-64
Max
Typ
5
5
4.5
5
5
Total current consumption (mA)
Frequency range (MHz)
250
250
250
250
265
Range
40 - 1003
40 - 1003
40 - 1003
40 - 1003
40 - 1003
CGD104xHi
PAD
OUT
H
L
port 1
CGD104xHi
PAD
OUT
H
L
port 2
EQ
PAD
CGD104xHi
PAD
OUT
RF switch
H
L
port 3
(N + 1)
CGD104xHi
PAD
OUT
H
L
port 4
bra822
An optical node with multiple out-ports using the CGD1040Hi / CGD1042Hi / CGD1044Hi / CGD1046Hi
NXP Semiconductors RF Manual 16th edition
53
2.3ꢀTVꢀandꢀsatellite
2.3.1ꢀ LNAsꢀwithꢀprogrammableꢀgainꢀ&ꢀbypassꢀoptionꢀforꢀimprovedꢀtunerꢀperformanceꢀ
NXP LNAs BGU703x &BGU704x for TVs/STBs
Designed for high linearity and low noise, these 3.3 and 5 V wideband LNAs support multi-tuner applications
in TVs, DVR/PVRs, and STBs operating between 40 MHz and 1 GHZ. A unique programmable gain with
bypass mode compensates for tuner switch signal loss (important in multi-tuner systems), and improves
overall system performance by 7 to 10 dB.
Key features
NXP’s BGU703x and BGU704x low-noise amplifiers (LNAs)
upgrade overall picture quality with improved signal handling
(NF, dynamic range), while reducing the number of external
components.
Internally biased
Fixed Gp = 10 dB: BGU7031 (5 V), BGU7041 (3.3 V), and
Fixed Gp = 14 dB: BGU7044 (3.3 V)
Programmable between Gp = 10 dB and
bypass: BGU7032 (5 V), BGU7042 (3.3 V), and programmable Produced in NXP’s own QUBiC4+ Si BiCMOS process, they
between Gp = 14 dB and bypass: BGU7045 (3.3 V)
Programmable between Gp = 10 dB, 5 dB and bypass:
BGU7033 (5 V)
improve signal handling by compensating for the signal loss at
the tuner switch. This can improve system performance by as
much as 7 to 10 dB.
Flat gain between 40 MHz and 1 GHz
Output power at 1 dB gain compression (PL(1 dB) ) ranging
from 9 to 14 dBm
The BGU7031, BGU7041, and BGU7044 are LNAs with fixed gain.
The BGU7032, BGU7042, and BGU7045 have an additional
bypass mode, and the BGU7033 adds two gain levels along
with the bypass mode. In bypass mode, the devices consume
less than 5 mA of current. Integrated biasing and 75 Ω
matching reduces footprint by eliminating as many as 15
components compared to discrete solutions.
Noise figure as low as 2.8 dB
High linearity with an OIP3 of 29 dBm
75 Ω input and output impedance
Power-down during bypass mode
ESD protection >2 kV HBM, >1.5 kV CDM on all pins
Key trends
All the devices can be used with discrete or Si can tuners, as
well as with on-board tuners. They deliver more robust ESD
performance compared to GaAs solutions, withstanding >2 kV
human body model (HBM) and >1.5 kV charged device model
(CDM).
Multiple tuners in TV, DVR/PVR, and set-top box
applications, requiring improved signal handling
Use of 3.3 V Si tuner ICs, perfect match with our 3.3 V LNAs
(BGU704x)
Applications
BGU703x evaluation board
Terrestrial and cable set-top boxes (STBs)
Silicon and can tuners
Personal and digital video recorders (PVRs and DVRs)
Home networking and in-house signal distribution
54
NXP Semiconductors RF Manual 16th edition
LNAs for set-top boxes (75 Ω)
@
Frequencyꢀ
range
Gainꢀ(1)
(dB)
NF
PLꢀ(1dB)
(dBm)
OIP3
FLꢀ(2)
(dB)
RLout
(dB)
RLin
Type
Package
Mode
VCC
(V)
ICC
(MHz)
(mA)
(dB)
(dBm)
(dB)
BGU7031
BGU7032
BGU7033
BGU7041
BGU7042
BGU7044
BGU7045
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
40 - 1000
GP 10 dB
5
43
10
4.5
14
29
-0.2
12
18
GP 10 dB
5
5
43
4
10
-2
4.5
2.5
14
-
29
29
-0.2
-0.2
12
8
18
8
40 - 1000
40 - 1000
40 - 1000
40 - 1000
40 - 1000
40 - 1000
Bypass
G
P 10 dB
GP 5 dB
Bypass
5
5
5
43
43
4
10
5
4.5
6
14
9
29
29
29
-0.2
-0.2
-0.2
12
12
8
18
17
8
-2
2.5
-
GP 10 dB
3.3
38
10
4
12
29
-0.2
12
21
GP 10 dB
3.3
3.3
38
3
10
-2
4
12
-
29
29
-0.2
-0.2
12
10
21
10
Bypass
2.5
GP 14 dB
3.3
34
14
2.8
13
29
-0.2
12
20
GP 14 dB
3.3
3.3
34
3
14
-2
2.8
2.5
13
-
29
27
-0.2
-0.2
12
10
20
9
Bypass
Application diagram of an active splitter
with passive loop-through
Block diagram
CONVENTIONAL
TUNER OR
SILICON TUNER
BGU703x/BGU704x
VGA
surge
RF input
RF SW
BF1108 or BF1118
RF output
WB LNA
BGU7031/BGU7041/BGU7044(optional)
brb403
NXP Semiconductors RF Manual 16th edition
55
2.3.2ꢀ CompleteꢀsatelliteꢀportfolioꢀforꢀallꢀLNBꢀarchitecturesꢀ
NXP Satellite LNB devices TFF101xHN, BFU710F/730F, and BGA28xx
Designed for use in LNAs, mixers, and IF amplifiers, these robust, small-footprint products are the latest
additions to NXP's leading portfolio for satellite LNB architectures. They are manufactured in NXP’s
groundbreaking QUBiC4X SiGe:C and QUBiC4+ process technologies.
Fully integrated Ku-band downconverters TFF101xHN
BFU710F as mixer in Ku-band LNB
The TFF101xHN is a family of fully integrated downconverters
`Typical application: Active mixer for single-output LNB
for Ku-band LNBs. They give the best RF performance in terms `Single supply 3/5/6 V
of phase noise, gain, and noise figure at the lowest current
consumption in the market.
`Low power consumption: 2.5 mA
`LO drive < 0 dBm
`SSB noise figure < 8 dB (including BPF at the input)
`SSB conversion gain > 5 dB (including BPF at the input)
`Linearity (OIP3) > 0 dBm
Ku-band downconverter TFF101xHN/N1 for LNB
`Typical application: Universal single LNB & twin LNB
`Ultra-low current consumption: 52 mA over PVT
`Only 7 external components
`LO-RF isolation min 20 dB
`RF match better than 10 dB
`No inductors
`IF match better than 8 dB
`Single supply domain: 5 V
`Uses low-cost fundamental 25 MHz crystal
`High PL1dBo = 6 dBm / 3OIPo = 16 dBm
`Best-in-class PN < 1.4 deg RMS
- 10 kHz to 13 MHz integration bandwidth
`Multiple gain types available
BFU730F as LNA in Ku-band LNB
`Typical application: LNA2 and LNA3 for multi-output LNB
`Overall similar RF performance to GaAs pHemt LNAs
`Power consumption: 11 mA
`Single supply 3/5/6 V
- TFF1014HN/N1 36 dB
`Very high RF gain: 11.5 dB
- TFF1015HN/N1 39 dB
`Low noise figure: 1.25 dB
- TFF1017HN/N1 42 dB
`Linearity (OIP3) > 17 dBm
- TFF1018HN/N1 45 dB
`Return loss > 10 dB
`Flat gain over frequency (< 2 dBpp)
`Input & output matched 50 Ω
MMICs BGA28xx as IF amplifiers (first stage & output
stage)
`Small leadless DHVQFN16 package (2.5 x 3.5 x 0.85 mm)
For compatibility with existing designs, the series uses market
standard packages: the SOT363 and the pin-compliant
RF transistors BFU710F/730F
The BFU710F and BFU730F are wideband RF transistors that can SOT363F. The pinning is identical to NXP’s current gain
be used as an LNA or as a mixer for a DBS LNB in the Ku-band.
In either application, they deliver good noise and linearity, a
higher gain at a lower current consumption compared to their
GaAs pHEMT equivalents, and the cost advantage of silicon.
block family, and the blocks deliver similar noise figures. New
features include flatter gain, a positive gain slope, improved
P1dB vs Icc, and no necessity for an output inductor.
`Internally matched at 50 Ω
`Gain slope > 0.5 dB
BFU710F as LNA in Ku-band LNB
`Typical application: LNA2 for single-output LNB
`Overall similar RF performance to GaAs pHemt LNAs
`Power consumption: 3.5 mA
`Single supply: 3/5/6 V
`High RF gain: 13.5 dB
`Low noise figure: 1.6 dB
`Linearity (OIP3): 12 dBm
56
NXP Semiconductors RF Manual 16th edition
`Single supply voltage: 3.3 or 5 V
`Reverse isolation: > 30 dB up to 2 GHz
`Best-in-class power vs current consumption
`Noise figure: 4 to 6 dB at 1 GHz
`Unconditionally stable (K > 1)
the most recent additions to NXP’s leading portfolio for
satellite LNB. They join the other discrete products, including
oscillators, amplifiers, and switches, to provide complete
coverage for all LNB architectures.
`High-compression-point models work without output inductor Since the ICs, transistors, and the MMICs are manufactured
`6-pin SOT363 plastic SMD package
in NXP’s industry-leading QUBiC4X SiGe:C and QUBiC4+
process, they offer better overall RF performance and are more
robust than their GaAs equivalents and offer the added cost
advantage of silicon. The process technology also enables
higher integration, for added features. NXP owns the industrial
base for production (wafer fab, test, assembly), so volume
supplies can be assured.
These products – the integrated downconverters TFF101xHN,
the wideband transistors BFU710F/730F for LNA and mixer
functionality, and the BGA28xx series of IF MMICs – are
Satellite outdoor unit, twin low noise block (LNB) with
integrated mixer/ oscillator/ downconverter
LNA3
TFF1014
SWITCHED TO
LOW-BAND
IF out 1
LNA1
LNA2
BPF
H
LNA3
LNA3
LNA3
shared
crystal
LNA1
LNA2
TFF1014
SWITCHED TO
HIGH-BAND
IF out 2
V
BPF
22 kHz
TONE
DETECT
3
H/V
DETECT
aaa-002896
Note: Also see section 1.3.4 Satellite outdoor unit, twin low noise block (LNB) with integrated
mixer/ oscillator/ downconverter
Fully integrated mixer/oscillator/downconverter
LB/HB/H/V detection
pHemt bias
LO oscillator control
V/T
BIAS
LIN
linear regulated 5 V
HB
Hor
0.95 ~ 1.9 GHz/
1.1 ~ 2.15 GHz
nd
2
mixer
10.7 ~ 12.75 GHz
st
BPF
1
IF amps
BFU710F
Ver
25.000 MHz
PLL/VCO
TFF101xHN
LOOP
FILTER
001aan954
NXP Semiconductors RF Manual 16th edition
57
2.3.3ꢀ VSAT,ꢀ2-wayꢀcommunicationꢀviaꢀsatelliteꢀ
Design a Ku-/ Ka-band VSAT transceiver that meets IESS-308
with NXP's Ku-/ Ka-band RF LO generators
The TFF100xHN family are Ku-band RF PLLs, with integrated VCO intended for low phase-noise local-
oscillator (LO) circuits in Ku- & Ka-band VSAT transmitters and transceivers. Manufactured in a high-
performance SiGe:C process, these devices deliver extremely low phase noise and comply with the IESS-308
from Intelsat.
VSAT networks are commonly used to transmit narrowband
data, such as point-of-sale transactions for credit cards, or to
transmit broadband data that supports satellite Internet access
to a remote location, VoIP, or video.
The network typically consists of a dish antenna, an outdoor
unit, and an indoor unit. The outdoor unit is used for
frequency translation between RF and IF, and usually includes
a microwave-based uplink/downlink separator, a low noise
block (LNB) for receiving the downlink signals, and a block
Upconverter (BUC).
The VSAT ICs can be used to create the LO generator for a
linear BUC (meaning the IF or RF conversion is done by mixing
with an LO).
To enable precise frequency and time multiplexing, the
Features
downlink signal provides an accurate frequency reference of
`Phase noise compliant with IESS-308 (Intelsat)
10 MHz. The indoor unit frequency multiplexes this with the
`Differential input and output
uplink IF signal, and the LO signal in the BUC needs to be
`Divider settings at 16, 32, 64, 128, or 256
frequency-locked to the reference.
`Lock-detect output
`SiGe:C technology (120 GHz fT process)
The TFF100xHN ICs are housed in a 24-pin HVQFN (SOT616-1)
`HVQFN24 (SOT616-1) package
package. The pins have been assigned for optimal performance.
Three voltage domains are used to separate the block on the
Applications
IC, and two pins for each output (OUT-P and OUT-N) have been
`VSAT block upconverters
reserved to match a typical layout using a linewidth of Z = 50 Ω
`VSAT down conversion
microstrip on a 20-mil RO4003 board (1.1 mm).
`Local oscillator signal generation
The ground pins have been placed next to the reference input
and the output, and, to minimize crossings in the application,
all the supply pins are on the same side of the IC.
58
NXP Semiconductors RF Manual 16th edition
Satellite
VSATs
HUB
Typical VSAT network
Complete LO generator for linear BUC with TFF1003HN
PLL
Outputꢀbuffer
Input
Si
PLLꢀphaseꢀnoiseꢀ
@ꢀN=64ꢀ@ꢀ100ꢀkHz
VCC
ICC
fIN(REF)
Po
Typ
(dBm)
-5
RLout(RF)
Type
Package
fo(RF)
Typ
Max
(dBc/Hz)
-92
Max
(dB)
-10
Min
(dBm)
-10
(MHz)
50 - 815
(V)
3.3
3.3
(mA)
100
130
(GHz)
TFF1003HN
TFF1007HN
SOT616
SOT616
12.8 - 13.05
14.62 - 15
228.78 - 234.38
-104
-3
-10
-10
Singleꢀsupplyꢀ
Type
Application
Iccꢀ(mA)
RFꢀgainꢀ(dB)
NFꢀ(dB)
OIP3ꢀ(dBm)
(V)
Ku-band LNA2 for single
output LNB
BFU710F
BFU730F
3.5
11
3/5/6
13.5
11.5
1.6
12
17
Ku-band LNA2 and LNA3
for multiple output LNB
3/5/6
1.25
Singleꢀsupplyꢀ
(V)
SSBꢀconversionꢀLO-RFꢀisolationꢀ
Type
Application
Iccꢀ(mA)
LOꢀdriveꢀ
SSBꢀNFꢀ(dB)
gainꢀ(dB)
(dB)
Ku-band active mixer for
single output LNB
BFU710F
2.5
3/5/6
< 0 dBm
< 8 dB
> 5 dB
min 20
NXP Semiconductors RF Manual 16th edition
59
2.3.4ꢀ LowꢀnoiseꢀLOꢀgeneratorsꢀforꢀmicrowaveꢀ&ꢀmmWaveꢀradiosꢀ
NXP LO generators (integrated VCO/PLL) TFF11xxxHN
Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process technology, these highly integrated,
alignment-free LO generators are low-power and low-spurious solutions that simplify design-in and lower
the total cost of ownership.
These low noise local-oscillator (LO) generators, optimized
for use in many different microwave applications between
7 and 15 GHz, deliver highly accurate performance in a small
footprint. They require no alignment or frequency modification
on the production line, so they simplify manufacturing. High
integration saves board space and makes design-in easier, for
lower overall cost and faster development.
Since these ICs are manufactured in NXP’s industry-leading
QUBiC4X SiGe:C process, they offer better overall RF
performance, are more robust than their GaAs equivalents,
Features
and consume much less power. The process technology also
`TFF11xxxHN family: lowest-noise LO generators for
enables higher integration, for added features. NXP owns the
a full family in 7 to 15 GHz range
industrial base for production (wafer fab, test, assembly),
`Maximum power consumption for all types is 330 mW (typ)
so volume supplies can be assured.
`Phase-noise compliant with IESS-308 (Intelsat)
`Proven QUBiC4X SiGe:C technology (120 GHz fT process)
The TFF1003HN is the basis for the entire family of LO
`External loop filter
generators. It has VCO coverage of 12.8 to 13.05 GHz and
`Differential input and output
accepts input signals from 50 to 816 MHz. The divider can be set
`Lock-detect output
for 16, 32, 64, 128, or 256, and the output level is -5 dBm with a
`Internally stabilized voltage reference for loop filter
stability of 2 dB. The family of LO generators is completed by
`24-pin HVQFN (SOT616-1) package
a range of 18 different devices operating in a center frequency
ranging from 7 to 15 GHz. The RF performance of all these
Applications: TFF11xxxHN family
devices is consistent with the TFF1003HN.
`Industrial/medical test and measurement equipment
`Electronic warfare (EW)
All the LO generators have low power dissipation (330 mW typ),
`Electronic countermeasures (ECM)
and all are available in a space-saving 24-pin HVQFN package.
`Point-to-point
`Point-to-multipoint
`Satellite communication/VSAT
`Radar systems
Full portfolio overview of low noise LO generators for
general microwave applications in section 3.4.4
60
NXP Semiconductors RF Manual 16th edition
2.4ꢀPortableꢀdevices
2.4.1ꢀ TheꢀbestꢀreceptionꢀofꢀGNSSꢀsignalsꢀwithꢀtheꢀsmallestꢀfootprintꢀ
NXP SiGe:C GPS LNAs BGU700x/BGU8007
NXP's GPS low-noise amplifiers offer the best reception of weak signals because of dynamic suppression
of strong cellular and WLAN transmit signals. Moreover, as only two external components are required,
designers can save up to 50% in PCB size and 10% in component cost.
Key features
These SiGe:C low-noise amplifiers (LNAs) improve the
reception of GPS signals, including GloNass and Galileo.
Available in extremely small 6-pin packages, they reduce
footprint, lower cost, and enhance reception in systems that
use an active or patch antenna.
Low noise figure: 0.75 dB
System-optimized gain of 16.5 or 19 dB
Adaptive biasing dynamically suppresses strong cellular and
WLAN transmit signals, resulting in improved linearity of
10 dB better IP3 under -40 to -20 dBm jamming conditions
and effective GPS output with jammer powers up to -15 dBm
AEC-Q100 qualified (BGU7004, BGU7008) for highest
reliability in harsh conditions
GPS has become a standard feature in a very wide range of
consumer products, from personal navigation devices to digital
video cameras, watches, electric cars, and more. GPS signal
power levels are weak and below the noise floor at -155 dBm.
In many of these products, especially smart phones, strong
transmitters such as WLAN and cellular can drive the GPS LNA
into compression. When the GPS LNA is in compression, it has
Only two external components required
Small 6-pin leadless package: 1.45 x 1.0 x 0.5 mm
Key benefits
Maintains optimal GPS signal reception for as long as possible lower gain, and that can worsen GPS reception. Also, when the
Significant PCB size savings (50%)
Lower component cost (10%)
LNA is in compression, it generates intermodulation products
and harmonics from the transmitter signals, which can
overpower the weak GPS signals and lead to no GPS reception.
Applications
Smart phones, feature phones
Tablets
The NXP BGU700x/BGU8007 series use adaptive biasing
to immediately detect any output power from jammers, and
compensate by temporarily increasing the current. As a result,
optimal GPS signal reception is maintained for as long as possible.
Personal Navigation Devices (PNDs)
Digital Still Camera (DSCs)
Digital Video Camera (DVCs)
RF front-end modules (used in phones)
Complete GPS chipset modules (used in DSCs)
Automotive applications (BGU7004/8): toll collection,
emergency call
Each device in the BGU700x/BGU8007 series requires only one
input matching inductor and one supply decoupling capacitor
to complete the design. This creates a very compact design
and lowers the bill of materials. Designers can save up to 50%
in PCB size and 10% in component cost. For example,
the BGU7005 is in a 1.45 x 1 mm package with application
area at only 4.53 mm2. This is 50% smaller than a comparable
solution with a 9.06 mm2 application area.
NXP Semiconductors RF Manual 16th edition
61
Application diagram
external
active
antenna
LNA
LNA
BPF
SPDT
embedded
antenna
BPF
BPF
GPS
RECEIVER
IC
001aan955
Smallest footprint
MMICꢀ*
Pins Pitch Area
SMDꢀsize
SMD'sꢀ
Appl.
SMD'sꢀ
area
Packageꢀsize
Appl.ꢀarea
Type
Package
X
Y
X
Y
mm
mm
mm
#ꢀ
mm mm2
#
mm
mm
mm2
mm2
BGU7005/7
Competitor
Competitor
Competitor
Competitor
Competitor
SOT886
1.45 x 1
1.7
1.25
6
0.5
2.13
1.65
1.21
3.49
2.48
3.06
2
1.5
0.8
2.4
4.53
Wafer-level package
1.26 x 0.86
0.86 x 0.86
2 x 1.3
1.5
1.1
1.1
1.1
6
4
6
6
6
0.4
6
4
4
4
5
1.5
1.5
1.5
1.5
1.5
0.8
0.8
0.8
0.8
0.8
7.2
4.8
4.8
4.8
6
8.85
6.01
8.29
7.28
9.06
Wafer-level package
0.4
Thin small leadless package
Thin small leadless package
2.25
1.65
1.75
1.55
1.5
0.5
0.48
0.5
1.4 x 1.26
1.5 x 1.5
Thin small outline non-leaded
1.75
* Includes keep-out area on PCB (a commonly used assembly rule)
SiGe:C GPS LNAs
@ 1.575 GHz
Supply
voltage
Noise
figure
Input power at 1 dB gain
compression
Input third-order intercept point
f1 = 1713 MHz, f2 = 1851 MHz
Supply current
Insertion power gain
2
Vcc
(V)
Icc
|s21
|
NF
PL(1dB)
IP3i
(mA)
(dB)
(dB)
(dBm)
(dBm)
Type
Package
Min
Max Min
Typ
-
Max Min
Typ
Max Typ
BGU7003
SOT891
2.2
2.85
2.85
2.85
2.85
2.85
2.2
3
-
15
-
16
-
18.3
16.5*
20
-
0.8
0.9
0.9
0.9
0.9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-20
-
-
-
-
-
-
-
-
-
-
-
-
0
-
-
-
12
12
5
BGU7004^ SOT886
1.5
1.5
1.5
1.5
1.5
4.5
-14 -11
-14 -11
-15 -12
-15 -12
-
-
-
-
-
-11 -8
-11 -8
-14 -11
-14 -11
5
5
1
1
-
9
9
4
4
-
5
5
2
2
-
BGU7005
BGU7007
SOT886
SOT886
-
4.5
4.8
4.8
4.6
-
-
16.5*
-
-
-
-
-
-
-
-
-
18.5**
18.5**
19.0***
-
-
-
-
-
-
BGU7008^ SOT886
BGU8007 SOT886
-
-
-
-
-
-
-
-
-
5
-
-
-
-
0.75# -15 -12
-
-
-13 -10
-
-
1
4
2
5
-
-
* 16.5 dB without jammer / 17.5 dB with jammer
** 18.5 dB without jammer / 19.5 dB with jammer
*** 19.0 dB without jammer / 20.5 dB with jammer
^ AEC-Q101 qualified (some limitations apply)
# Evaluation board losses excluded
62
NXP Semiconductors RF Manual 16th edition
2.5ꢀIndustrial,ꢀscientificꢀ&ꢀmedical
2.5.1ꢀ MedicalꢀapplicationsꢀdrivenꢀbyꢀRFꢀpower:ꢀFromꢀimagingꢀtoꢀcancerꢀtreatment,
aꢀflexibleꢀandꢀversatileꢀtechnologyꢀinꢀtheꢀdoctor’sꢀtoolbox
RF technology is making its way into all kinds of medical applications, ranging from the
well-known imaging techniques (MRI, EPRI) over low frequency, external heat treatment,
and electro-surgical tools, to minimally invasive endoscopic cancer treatment (RF ablation).
One clear trend is the increasing share of RF-based technologies for ablation. Another is the
trend towards higher RF frequencies (several GHz) and higher powers (> 100 W) in order to
achieve higher spatial resolution, better control, and shorter treatment times.
RF radiation is not a new technology in medicine. It is currently
used for imaging purposes in MRI (magnetic resonance imaging)
and EPRI (electron paramagnetic resonance imaging), techniques
that employ frequencies from a few megahertz to about 500 MHz.
Other well-known external heat-treatments to rejuvenate skin or
relieve muscle pain make use of frequencies around 480 kHz – not
too demanding in terms of RF. Surgical equipment to cut and
diffused metal oxide semiconductor). This technology has proven
to be powerful, efficient, and rugged in base stations, radar
systems, broadcast transmitters, and other industrial, scientific,
and medical (ISM) applications. LDMOS is available from up to
50 V supply to achieve power levels up to 1,200 W per single
device, with outstanding ruggedness and high gain and efficiency.
To drive and control the LDMOS power amplifier stages, it
simultaneously coagulate blood vessels runs off RF at about 5 MHz. takes voltage-controlled oscillators, phase locked loops, and
The latter application belongs to a class of treatment techniques
that is growing rapidly and uses RF radiation to deposit energy
locally at various parts of the body – in general to “ablate”
(remove) unwanted tissue. Inside the body, the RF energy heats
the surrounding tissue until it is desiccated and/or necrotized. The
damaged tissue will later be re-absorbed by the surrounding, living
tissue. Further application examples for RF ablation include cancer
treatment in the lung, kidney, breast, bone and liver, removal of
varicose veins, treatment of heart arrhythmia, and a growing list of
other applications that benefit from the high control and feedback
possible with RF.
medium power amplifiers. These parts of the RF signal chain are
conveniently available based on reliable and high-volume SiGe:C
(QUBiC) semiconductor technologies. Going a step further, one
can even use high-speed converters to drive the signal chain
entirely from the digital domain, for full and easy control over the
shape and modulation of the applied RF.
RF implications
These in-situ medical applications and, in general, most of the ISM
applications, usually form highly mismatched RF loads during some
part of the usage cycle. This in turn means that, without protection
or other measures, all of the "injected" RF power reflects back into
the final stage of the amplifier and needs to be dissipated in the
transistor(s), and most likely destroys the device(s) if this situation
lasts too long. LDMOS transistors are designed to be extremely
rugged and generally withstand these mismatch situations without
degrading over time.
Another advantage of RF in this context is the fact that it can be
applied via small catheters ending in antennas that deploy the RF
signal. Unlike older, direct-current techniques, the tissue is heated
only very locally around the antenna. Neighboring nerves (and the
heart) are not stimulated. This led to the development of a variety
of specialized catheters, used during minimally invasive surgery,
along with ultrasound or X-ray imaging to determine the exact
location of the RF-active part. During the treatment, the impedance
of the surrounding tissue can be monitored and the end-point
determined. With proper catheters, one can even achieve “self
limitation” due to the reduced uptake of RF energy in desiccated
tissue. Likewise, the RF frequency can be used to tune the energy
deposition zone around the catheter: the higher the frequency, the
smaller the penetration depth – and hence the volume to deposit
the RF energy – in the watery tissue.
This device ruggedness, or the ability to withstand “harsh” RF
conditions in general, be it mismatch or extremely short pulse rise
and fall times, is essential for reliable device performance. RF power
companies have gone to great lengths to achieve best-in-class
device ruggedness. The technologies have been hardened under
the most stringent ruggedness tests during development, which is
particularly true for the 50 V technology. Among other factors, the
base resistance of the parasitic bipolar and the drain extension of
the LDMOS device play key roles in this respect.
This ruggedness, combined with the power density and the high
efficiencies achievable, make LDMOS the preferred technology for
RF power amplifiers up to 3.8 GHz.
With the trend towards higher RF frequencies and powers, the
complexity of RF generators and the requirements for the device
technology also increase. Above 10 MHz, say, up to 3.8 GHz, the
technology of choice for power amplifiers is Si LDMOS (laterally
NXP Semiconductors RF Manual 16th edition
63
2.5.2ꢀ ꢀRF-drivenꢀplasmaꢀlighting:
Theꢀnextꢀrevolutionꢀinꢀlightꢀsourcesꢀareꢀpoweredꢀbyꢀsolid-stateꢀRFꢀtechnology
Recent developments in RF power technology, such as improved cost structure, ruggedness, and power levels
of up to 1200 W per device, have enabled a breakthrough light source technology, called ‘RF plasma lighting’.
All RF plasma lighting sources make use of a small, electrode-less quartz lightbulb that contains argon gas
and metal halide mixtures. The bulb is powered by direct RF radiation, which ignites the gas mixtures to
create and power a bright plasma, the color of which can be tuned by the composition of its constituents.
This technology works without any additional electrodes in
the bulb, unlike standard high-intensity discharge lamps.
No electrodes means very long operating lifetimes, since
the contamination and wire erosion that lead to decreased
efficiency and eventual lamp failure are precluded. The RF
light source lives up to 50,000 hrs when it reaches 50% of its
original light output. Typical high-intensity discharge lamps, by
comparison, achieve 20,000 hrs operating life. Another strong
point of the plasma light is its efficiency: 1 W of RF power is
converted to 130-140 lm of light. This leads to very compact,
very bright lamps that easily emit 10,000 to 20,000 lm of white
light with a close-to-sunlight color rendition.
The plasma light source is among the brightest and most
efficient available to date and boasts a very long life time.
Important to note is the high brightness per bulb: much
brighter than LEDs, for example. Consequently, it takes
multiple LEDs to generate the light output of a single plasma
light source. Hence, LED luminaries for street lighting will be
considerably larger than those for plasma light sources.
RF implications
The RF plasma lighting sources can operate at a wide range of RF
frequencies, but initial applications typically focus at frequencies
of around a few hundred megahertz. At these frequencies both
the 28 and 50 V LDMOS technologies can be used, yielding
high efficiency values of 70% to more than 80% and low-heat
dissipation making compact plasma lamp designs possible.
The key enabler for the RF light source is RF technology,
based on Si LDMOS RF power transistors. LDMOS technology
operating at 28 V is the leading RF power technology for cellular
base stations or broadcast transmitters as final amplifier stages
in the frequency range between a few MHz up to 3.8 GHz.
Recently, another LDMOS format, 50 V LDMOS, has emerged
for use in broadcast, ISM, defense and avionics applications.
It combines high power density to achieve power levels up to
1,200 W per single device and outstanding ruggedness, with
high gain and efficiency at frequencies of up to 1.5 GHz.
The RF-driven plasma light is a perfect example of novel
applications that can be powered by RF energy in the
industrial, scientific, and medical (ISM) realm. Established
technologies use RF to pump a gas discharge in a laser cavity.
These "gas discharge" applications and, in general, most of
the ISM applications, typically form highly mismatched RF
loads during some part of the usage cycle. In the case of
gas discharges, for example, the gas cavity acts as an "open
circuit" during switch-on. This in turn means that without
protection or other measures, all of the "injected" RF power
reflected back into the final stage of the amplifier needs to
be dissipated in the transistor(s) right there and most likely
destroys the device(s) if this situation lasts too long. After the
discharge strikes, the load impedance reverts to "matched,"
eventually, and the transistor sees an acceptable load.
Obviously, these mismatched conditions occur every time the
plasma is "switched on,” exerting strain on the finals. LDMOS
transistors are designed to be extremely rugged and generally
withstand these mismatch situations without degrading over
time.
Comparison of lighting technologies
The table below summarizes currently available technologies that
generate bright light with varying degrees of efficiency. It lists a
few key parameters, including lifetime, luminous flux, efficacy, color
rendition index, color temperature, start-up time, and re-strike time
(time to start after switch-off from normal operation).
Luminousꢀ
flux
(klm)
Colorꢀ
temperature
(K)
Start-up Re-strike
Lifetimeꢀ
(hrs)
Efficacy
(lm/W) rendering
Colorꢀ
Type
time
(s)
time
(s)
Incandescent 2,000
1,700
3,000
130
10 to 17
115
100
3200
0.1
0.3
0.1
0.1
0.1
0.1
Fluorescent
LED
10,500
25,000
51 to 76 2940 to 6430
30 6000
60 to 100
HID (high-
intensity
20,000
50,000
25,000 65 to 115 40 to 94 4000 to 5400
25,000 100 to140 70 to 94 4000 to 5500
60
30
480
25
discharge)
This ruggedness, combined with the high power density and
efficiency achievable, make LDMOS the preferred technology
for RF lighting and other equally demanding applications in the
ISM realm.
RF plasma
Table 1: Comparison of light generation. Note: numbers are only valid for a
qualitative comparison. Source: www.wikipedia.org and references therein.
64
NXP Semiconductors RF Manual 16th edition
2.5.3ꢀ QUBiC4ꢀSiꢀandꢀSiGe:CꢀtransistorsꢀforꢀanyꢀRFꢀfunction
NXP wideband transistors BFU6x0F & BFU7x0F
These next-generation devices offer the best RF noise figure versus gain performance, drawing the
lowest current. This performance allows for better signal reception at low power and enables RF
receivers to operate more robustly in noisy environments.
Key features
can be used as low-noise amplifiers, while the BFUx60F
and BFUx90F can be used as high-linearity and high-output
amplifiers. Other options include using these transistors as
40/110 GHz transition frequency allows for applications
up to 18 GHz and beyond
High gain of 13.5 dB at 12 GHz with a low noise figure of 1.45 dB buffer amplifiers, mixers, and oscillators.
High linearity of 34 dBm (OIP3) at 1.8 GHz
Consuming only 3 mA to generate 13.5 dB gain at 12 GHz
Plastic surface-mount SOT343F package for high
performance and easy manufacturing
Higher transition frequencies (40 to 110 GHz) enable higher
application frequencies (24/77 GHz car radar, 18 GHz Ka band,
3.5-3.7 WiMas, etc.), and the devices meet the low current
requirements of wideband applications.
Applications
Wideband applications that require
- Low-noise amplifiers
- High linearity and high output amplifiers
- Buffer amplifiers
As a result, these devices are ideal for use in a very wide
range of applications: second and third LNA stage and
mixer stage in DBS LNBs, Ka/Ku band DROs, satellite radio
(SDARS) LNA, C-band/X-band high-output buffer amplifiers,
AMR, WLAN/WiFi, ZigBee, Bluetooth, FM radio, GPS, cellular
(LTE, UMTS), mobile TV, RKE, high-linearity applications, low
current battery-equipped applications, low-noise amplifiers for
microwave communications systems, medium output power
applications, microwave driver/buffer applications, and more.
- Mixers
- Oscillators
The devices in this family of sixth- (Si) and seventh- (SiGe:C)
generation RF transistors can be used to perform nearly any RF
function. For example, the BFUx10F, BFUx30F, BFU725/N1
Selection guide – function
Function
LNAs,ꢀmixers,ꢀfrequencyꢀmultipliers,ꢀbuffers
12ꢀGHzꢀ–ꢀꢀ
High-linearity,ꢀhigh-outputꢀamplifiersꢀ&ꢀdrivers
Oscillators
ꢀ6ꢀGHzꢀ–ꢀ12ꢀGHz
ꢀX,ꢀKuꢀlow
Frequencyꢀ
range
12ꢀGHzꢀ–ꢀꢀ
+18ꢀGHzꢀ
<6ꢀGHz
6ꢀGHzꢀ–ꢀ12ꢀGHzꢀ
<6ꢀGHz
L,S,Cꢀ
6ꢀGHzꢀ–ꢀ12ꢀGHzꢀ 12ꢀGHzꢀ–ꢀ18ꢀGHzꢀ
<6ꢀGHz
L,S,Cꢀ
+18ꢀGHzꢀ
Band
Typeꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
L,S,Cꢀ
X,ꢀKuꢀlowꢀ
Kuꢀhigh,ꢀKaꢀ
X,ꢀKuꢀlowꢀ
Kuꢀhigh
Kuꢀhigh,ꢀKa
BFU610F
BFU630F
BFU660F
BFU690F
BFU725F/N1
BFU710F
BFU730F
BFU760F
BFU790F
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Red = application note available on NXP.com
Selection guide – specification
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
SOT343F DFP4
SOT343F DFP4
SOT343F DFP4
SOT343F DFP4
SOT343F DFP4
6th
6th
6th
6th
7th
7th
7th
7th
7th
15
21
21
18
43
55
55
45
25
5.5
5.5
5.5
5.5
2.8
2.8
2.8
2.8
2.8
10
30
60
100
10
40
30
70
100
136 NPN
200 NPN 0.85
225 NPN
230 NPN
136 NPN 0.85
136 NPN
197 NPN
220 NPN
234 NPN
1.1
2.4
2.4
1.5
1.5
5.8
5.8
5.8
1.5
1.5
2
3
6
15
2
5
5
12
20
2
2
2
2
2
2
2
2
2
1.7
1.3
1.2
0.7
1.45
1.1
1.3
0.5
0.5
5.8
5.8
5.8
2.4
12
12
12
2.4
2.4
2
3
6
15
2
5
5
12
20
2
2
2
2
2
2
2
2
2
3
5.8
10
30
60
70
5
25
15
30
60
1.5
2.5
4
4
2.5
2
2.5
2.5
2.5
18
27.5
28
33
19.5
19
29
33
34
5.8
5.8
5.8
2.4
5.8
5.8
5.8
5.8
2.4
10
30
40
70
10
25
20
30
30
1.5
2.5
4
4
1.5
2
2.5
2.5
2.5
12.5
18.5
20
4.5
8
12.5
18.5
19
5.8
5.8
2.4
5.8
5.8
5.8
5.8
2.4
0.6
0.6
BFU725F/N1 SOT343F DFP4
0.7
0.8
0.4
0.4
BFU730F
BFU760F
BFU790F
SOT343F DFP4
SOT343F DFP4
SOT343F DFP4
NXP Semiconductors RF Manual 16th edition
65
2.5.4ꢀ Buildingꢀonꢀdecadesꢀofꢀinnovationꢀinꢀmicrowaveꢀandꢀradar
NXP builds on more than 50 years of history in semiconductor technology and component design. For more
than three decades we have led in providing high-performance RF technologies for microwave applications.
The company has built a strong position in the field of RF small-signal and power transistors for microwave
amplifiers with best-in-class Si devices and processing technologies.
We were the first semiconductor company to supply S-band
transistors (2700 to 3500 MHz) based on laterally diffused
metal-oxide-silicon (LDMOS). To further strengthen our
position towards the future, we are currently developing
new high-power and high-bandwidth technologies based on
gallium nitride (GaN) material.
Another enabling technology is NXP’s BICMOS process
QUBiC, which is available in several variants with fT up to
200 GHz, each specialized to address specific small-signal
RF applications.
Features
The product portfolio encompasses:
- Low-noise amplifiers (LNAs)
- Variable-gain amplifiers (VGAs)
- Mixers
`Lowest noise LO generators for 7 to 15 GHz range
`Maximum power consumption for all types, typical 330 mW
`Phase-noise compliant with IESS-308 (Intelsat)
`Proven QUBiC4X SiGe:C technology (120 GHz fT process)
`External loop ꢀlter
- Local oscillators (LOs)
- LO generators
`Differential input and output
`Lock-detect output
NXP now also focuses on architectural breakthroughs and
has developed highly integrated products for microwave and
millimeter wave. One example is a family of LO generators
from 7 to 15 GHz with integrated PLL and VCO. Another
example is an integrated RF power module in S-band
(3.1-3.5 GHz) at 200 W.
`Internally stabilized voltage reference for loop filter
RF power product highlight
The BLS6G2933P-200 is the first LDMOS-based, industry-
standard pallet produced by NXP. This pallet offers more than
40% efficiency and includes the complete bias network for
S-band applications.
RF small-signal product highlight
Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process
technology, these highly integrated, alignment-free LO
generators TFF1xxxHN are low-power, low-spurious solutions
that simplify design-in and lower the total cost of ownership.
66
NXP Semiconductors RF Manual 16th edition
Microwave applications and bands of operation
Features
System
Frequency
`Reduces component count and considerably simplifies radar
system design
VHF and UHF
<1 GHz
L-band
1200 - 1400 MHz
2700 - 3500 MHz
8000 - 12000 MHz
`P1 dB output power 200 W
S-band
X-band
`Efficiency > 40%
Commercialꢀavionics
DME (Distance Measuring Equipment)
Transponders
`Industry-standard footprint
978 - 1215 MHz
`50 Ω in/out matched for entire bandwidth
`Lightweight heat sink included
Mode A / Mode S / Mode C / TCAS
Militaryꢀavionics
1030 - 1090 MHz
`The advantages of LDMOS over Bipolar
- Higher gain and better efficiency
- Better ruggedness – overdrive without risk to 5 dB
- Improved pulse droop and insertion phase
- Consistent performance – no tuning required
- Improved thermal characteristics – no thermal runaway
- Non-toxic packaging and RoHS-compliance
IFF transponders (Identification, Friend or Foe)
TACAN (Tactical Air Navigation)
1030 - 1090 MHz
960 - 1215 MHz
JTIDS / MIDS
(Joint Tactical Information Distribution System)
960 - 1215 MHz
Marine radar
9300 - 9500 MHz
For a complete list of products, see the respective small-
signal and power microwave pages in chapter 3
NXP Semiconductors RF Manual 16th edition
67
2.5.5ꢀꢀ Digitalꢀbroadcastingꢀatꢀitsꢀbestꢀ
The BLF881 / BLF888A transistor line-up enables today’s most powerful and
efficient digital broadcast transmitter applications
BLF881
Key features and benefits
This transistor is based on NXP’s 50 V LDMOS technology and
features 120 W RF output power for broadcast transmitter and
industrial applications. An unmatched device, the BLF881 can be
used in the HF to 1 GHz range. The excellent ruggedness and
broadband performance of this device make it ideal for digital
transmitter applications – either on its own or as a driver in
combination with the high-power transistor BLF888A.
`Excellent efficiency and reliability
`Highest power levels in the market
`Best-in-class ruggedness designed into all devices
`Best broadband performance
`Easy power control
`Best-in-class design support
`Low thermal resistance design for unrivalled reliability
`Advanced flange material for optimum thermal behavior
and reliability
The BLF881 is also available in an earless version, the BLF881S,
which enables an even more compact PCB design.
`Designed for broadband operation (470 to 860 MHz)
Key applications
BLF888A
`Analog and digital TV transmitters
Running from a 50 V supply voltage, the BLF888A is a
600 W LDMOS RF power transistor for broadcast transmitter
and industrial applications. Being a matched device, the
BLF888A is optimized for digital signal broadcasting and
can deliver 120 W average DVB-T output power over the full
UHF band from 470 MHz to 860 MHz with 20 dB power gain
and 31% drain efficiency. The excellent ruggedness of this
transistor (it withstands a VSWR in excess of 40:1) makes it the
ultimate choice as final stage for digital transmitter applications
– ideally accompanied by a BLF881 as the driver. This device
is also available in an earless package, denoted BLF888AS, to
enable surface-mount assembly processes and take optimum
advantage of the very low thermal resistance of the package.
typ. 0.5 kW
DVB-T
Driver stages
8× final
typ. 5 kW DVB-T
output power
TV exciter
DVB-T
harmonic
filter
power
monitor
amplifiers
brb339
Type
Product
fminꢀ(MHz)
fmaxꢀ(MHz)
P1dBꢀ(W)
Matching
VDSꢀ(V)
PLꢀ(W)
ηDꢀ(%)
Gpꢀ(dB)
Testꢀsignal Package
BLF642
BLF884P(S)
BLF879P
BLF888A(S)
BLF888B(S)
BLF881(S)
Driver
1
1400
860
860
860
860
35
-
I
I
I
I
-
32
50
42
50
50
50
35
63
46
47
46
46
49
19
21
21
21
21
21
CW
CW
CW
CW
CW
CW
SOT467C
SOT1121
SOT539A
SOT539
SOT539
SOT467
470
470
470
470
1
300
500
600
600
140
150
200
250
250
140
Final
1000
68
NXP Semiconductors RF Manual 16th edition
2.5.6ꢀꢀ Settingꢀtheꢀbenchmarkꢀforꢀultraꢀlow-powerꢀandꢀhigh-performanceꢀwirelessꢀconnectivityꢀsolutionsꢀ
NXPs JN5148/2 wireless microcontroller platform with chipsets, modules, and supporting software
NXP provides a complete package for the development of IEEE802.15.4-based wireless network solutions,
incorporating all the necessary hardware and software components. NXP’s JN514x range of wireless
microcontroller chips provides the optimum hardware platform for designing wireless network nodes that
combine high-performance processing and radio communications. NXP also supplies JN514x wireless
microcontrollers mounted on modules, and evaluation kits that simplify the development of custom
applications.
Products
Software
`JN5142-J01 for JenNet-IP Smart Devices, JN5148-J01 for
JenNet-IP Gateways
`JN5148-001 for JenNet and IEEE802.15.4, JN5142-001 for
RF4CE and IEEE802.15.4
`JN5148-Z01 for ZigBee applications
`JN5148-001-M00, JN5148-001-M03, JN5148-001-M04:
modules for JenNet and IEEE802.15.4
A selection of network protocol stacks, based on the industry-
standard IEEE802.15.4, is available to support the wireless
connectivity requirements of your application. These include
JenNet, JenNet-IP, and ZigBee PRO, which are provided as a
set of software libraries.
JenNet is suitable for all proprietary applications. ZigBee
PRO is used for smart energy and other applications where
ZigBee interoperability is required. JenNet-IP provides IPv6
connectivity to the end node and is rapidly emerging as a
standard for lighting and automation applications in buildings.
Key features
`Ultra low-power MCU together with an IEEE802.15.4-
compliant radio transceiver
`Enhanced 32-bit RISC processor for high performance
and low power
Evaluation kit
`On-chip ROM and RAM for storage of application,
networking stack, and software libraries
`A rich mix of analog and digital peripherals
`Low-current solution for long battery-life
`Standard-power and high-power modules
`Software Developer’s Kit (SDK), including JenNet,
JenNet-IP and ZigBee networking stacks
Key applications
`Smart lighting / smart energy / smart grid
`Utilities metering
`Home and commercial building automation and control
`Remote control
`Security systems
`Location-aware services – eg asset management
NXP Semiconductors RF Manual 16th edition
69
2.6ꢀTechnology
2.6.1ꢀ TheꢀfirstꢀmainstreamꢀsemiconductorꢀcompanyꢀtoꢀofferꢀGaNꢀproducts
ꢀꢀ
NXP Galium-Nitride (GaN) broadband amplifiers
A disruptive technology, setting new performance boundaries for RF power amplifiers
If independent market research claims come true, GaN product
sales will exceed 300 Musd in 2014. This can only happen if GaN
is made available through mainstream semiconductor companies,
and NXP is the first to make this happen. So, what is it about GaN
and RF power applications? Simply put, GaN makes a step increase
in efficiency and power density performance over Si LDMOS in
most applications. This can be quantified in the Johnson’s Figure
of Merit (FoM) – a combination of significant RF performance
variables that has a baseline for Si at 1 and leads to a FoM for GaN
of 324. To put this into some context, GaAs, another commonly
used compound material in RF, has a FoM of 1.44. With such a high
FoM rating, GaN truly represents a breakthrough technology.
in product reliability and cost, and give our customers a high
degree of confidence in the supply chain. It's part of what's
needed to take GaN to the mainstream.
The first NXP GaN products will be unmatched broadband
amplifiers for use in applications requiring high RF performance
across a wide range of frequencies up to 3.5 GHz. NXP’s first
generation GaN process is designed for products operating
from a 50V supply voltage, delivering best-in-class efficiency
and linearity. The products will use industry-standard package
footprints enabling customers to adopt NXP’s products into
existing designs without changing the mechanical design.
GaN products are termed High-Electron Mobility Transistors
(HEMT), a name that captures one of the intrinsic benefits of
GaN: the high electron drift velocity. These transistors are
depletion-mode devices, that is, devices that are normally on,
without the need for applying a gate bias. A negative gate
bias will be needed to switch the transistors off. This biasing
is not straightforward, but at NXP, we've developed complete
solutions (not just individual components) that include a tried
and tested bias circuit. We also provide continuous application
support throughout the life of the product.
Next-generation GaN devices from NXP will be super-efficient,
enabling a breakthrough in performance for the largest RF
power market segment: cellular base stations. In turn this
technology will enable a departure from linear amplifier
topologies with the onset of switched mode power amplifier
(SMPA) concepts. NXP’s commitment to exploit the technology
in a full portfolio of products will also lead to products for higher
frequency applications up to 10 GHz.
A further advantage of GaN is that it is a very hard structure able
to withstand very high temperatures. NXP’s GaN transistors will
be specified to a maximum temperature of 250 °C, compared to
225 °C for Si LDMOS. Special packages are required to support
such high temperatures. In this area, NXP's GaN customers
benefit from our 30-year legacy in RF power products, and our
large industrial base. As a GaN supplier, we deliver excellence
GaN RF power amplifiers
Testꢀ
signal
Plannedꢀ
release
Type
fminꢀ(MHz) fmaxꢀ(MHz) Poutꢀ(W) Matching VDSꢀ(V)
ηDꢀ(%)
Gpꢀ(dB)
Package
Applications
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
CLF1G0035-50
CLF1G0035-100
CLF1G0035-200
0
0
0
3500
3500
3500
50
-
-
-
50
50
50
54
52
50
14.2
14.8
14.2
Pulsed SOT467
Pulsed SOT467
Pulsed SOT1228
Q312
Q412
Q313
100
200
Cellular, WiMAX, ISM, avionics,
CLF1G0060-10
CLF1G0060-30
0
0
6000
6000
10
30
-
-
50
50
54
54
14
14
Pulsed SOT1227
Pulsed SOT1227
Q113
Q113
S-band, general purpose
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
CLF2G2536-100
CLF2G2536-300
CLF3G4060-30
CLF3G4060-350
2500
2500
4000
4000
3600
3600
6000
6000
100
300
30
I/O
I/O
I/O
I/O
28
28
28
28
65
65
55
55
13
13
13
13
Pulsed SOT1135
Pulsed SOT502
Pulsed SOT1135
Pulsed SOT502
Q413
Q413
Q114
Q114
Cellular, WiMAX, S-band
Cellular, WiMAX, S-band
C-band
350
C-band
70
NXP Semiconductors RF Manual 16th edition
2.6.2ꢀ CompletingꢀNXP'sꢀRFꢀpowerꢀtransistorꢀoffering:ꢀproductsꢀinꢀplasticꢀpackagesꢀ(OMP)
NXP is currently developing a complete line of overmolded plastic (OMP) RF power
transistors and MMICs with peak powers ranging from 3 to 500 W. The main benefit of
plastic packages is cost effectiveness with little or no impact on performance. The range
of plastic devices will complement the extensive range of RF power products that NXP
offers in ceramic packages for all frequency ranges and applications up to 2.45 GHz.
Products in development
`Single-stage broadband drivers in HSOP-outlines, from
3 to 10 W
`Final transistors in OMP package (SOT502-sized) ranging
from 140 to 200 W in frequency bands from 730 MHz
to 2.2 GHz
`Single-stage OMP drivers from 25 to 45 W, replacing
their ceramic equivalents for cost-sensitive applications
`Dual-stage MMICs from 30 to 60 W that can be used as
high-gain drivers or combined as low-power dual-stage
Doherty amplifiers
`Final transistors in OMP package (SOT502-sized) ranging
from 3 to 500 W in ISM frequency bands from a few MHz
up to 2.45 GHz
`Fully integrated plug-and-play Doherty PAs in a single
package (50 to 100 W)
Some of these products are available for sampling now, while
the rest of the portfolio will be rolled out throughout 2012.
RF power products in plastic packages (OMP)
fmin
(MHz)
ꢀ
fmax
(MHz)
ꢀ
P1dBꢀꢀ
(W)
Type
Matching Package
Description
BLP7G22-10
700
2000
700
2200
2200
900
10
60
-
SOT1179
SOT1212
SOT1224
SOT1224
Gen7 OMP LDMOS transistor for WCDMA & GSM applications
BLM7G22S-60PB(G)
BLP7G07S-140P(G)
BLP7G09S-140P(G)
I/O
O
Gen7 LDMOS MMIC for WCDMA applications (gull-wing)
140
140
Gen7 OMP push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing)
Gen7 OMP push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing)
900
1000
O
NXP Semiconductors RF Manual 16th edition
71
2.6.3ꢀ LookingꢀforꢀaꢀleaderꢀinꢀSiGe:C?ꢀYouꢀjustꢀfoundꢀus!ꢀ
NXP QUBiC4 process technology
NXP's innovative, high-performance SiGe:C QUBiC4 process lets customers implement more functions into
less space, with the added benefits of competitive cost, superb reliability, and significant manufacturing
advantages. Our state-of-the-art QUBiC4 technology and extensive IP availability speed the migration from
GaAs components to silicon by enabling cutting-edge products with best-in-class low noise performance,
linearity, power consumption, immunity to out-of-band signals, spurious performance, and output power.
QUBiC is a mature process that has been in mass production since 2002 and has had continuous performance
upgrades added ever since. The QUBiC4 process is automotive-qualified and dual-sourced in two high-
volume, NXP-owned 8-inch waferfabs that provide flexible, low-cost manufacturing with high yields and very
low ppm in the field.
There are three QUBiC4 variants, each with its own
benefits for specific application areas
QUBiC4+
The QUBiC4X is ideal for applications that typically operate at
up to 30 GHz (fT = 110 GHz , NF < 1.0 dB @ 10 GHz) and ultra-
low noise applications such as LNAs and mixers.
The QUBiC4+ BiCMOS process features 0.25 μm CMOS with
5 metal layers for integration of dense digital logic-based
smart functionality, a rich set of active and passive devices for
high-frequency mixed-signal designs, including thick top metal QUBiC4Xi
layers for high-quality inductors. The device set includes
35 GHz fT NPNs with 3.8 V breakdown voltage (BVce0) and low
noise figure (NF < 1.1 dB @ 2 GHz), 5 GHz fT VPNPs, a 28 GHz
high-voltage NPN with 5.9 V breakdown voltage, differential
and single-ended varicaps with Q-factor > 30, scalable
inductors with Q-factor > 20, 800 MHz FT lateral PNPs,
0.25 μm CMOS, 137, 220 & 12 to 2000 ohm/sq. poly and
active resistors, a 270 ohm/sq. SiCr thin film resistor,
a 5.7 fF/μm2 oxide capacitor and a 5 fF/μm2 MIM capacitor,
1 to 6 fF/μm2 oxide capacitors and various other devices
including L-PNPs, isolated NMOS, 3.3 V CMOS and RF-CMOS
transistors capacitor. The QUBiC4+ process is silicon-based
and ideal for applications up to 5 GHz (fT = 35 GHz,
NF < 1.1 dB @ 2 GHz), as well as for medium power amplifiers
up to 33 dBm.
The QUBiC4Xi BiCMOS process further enhances the QUBiC4X
process and offers an additional feature set of devices for high-
frequency mixed-signal designs. These include 180 GHz fT
NPNs with 1.4 V breakdown voltage and ultra-low noise figure
(NF < 0.7 dB @ 10 GHz), 0.25 μm CMOS, several resistors,
a 5.7 fF/μm2 oxide capacitor and a 5 fF/μm2 MIM capacitor.
QUBiC4Xi represents the newest SiGe:C process, with
improved fT (> 200 GHz) and even lower noise figure
(NF < 0.6 dB @ 10 GHz). It is ideal for applications beyond
30 GHz, such as LO generators.
QUBiC4X
The QUBiC4X BiCMOS process is a SiGe:C-based extension
of the QUBiC process for high-frequency mixed-signal designs
and offers a rich set of devices, including a 110 GHz f NPN with
T
2.0 V breakdown voltage and very low noise figure (NF < 1.0 dB @
10 GHz), 0.25 μm CMOS, a variety of resistors, a 5.7 fF/μm2 oxide
capacitor, and a 5 fF/μm2 MIM capacitor.
72
NXP Semiconductors RF Manual 16th edition
QUBiC4+
`Baseline, 0.25 µm CMOS, single poly, 5 metal
`Digital gate density 26k gates/mm2
`fT/fMAX= 35/80 GHz
SiGe:C
QUBiC4Xi
QUBiC4X
f / fmax = 180/200 GHz
T
`+TFR – Thin Film Resistor
`+DG – Dual Gate Oxide MOS
`+HVNPN – High Voltage NPN
SiGe:C
f / fmax =110/140 GHz
T
`+VPNP – Vertical PNP (high Vearly
)
`-4ML – high-density 5fF/µm2 MIM capacitor
`Wide range of active and high-quality passive devices
`Optimized for up to 5 GHz applications
+VPNP
+TFR
+DG
QUBiC4X
QUBiC4+
`SiGe:C process
`fT/fMAX= 110/140 GHz
`Optimized for applications up to 30 GHz
+HVNPN
-4ML
BiCMOS
f /f max = 35/80 GHz
QUBiC4Xi
`SiGe:C process
`Improves fT/fmax up to 180/200 GHz
`Optimized for ultra-low noise microwave above 30 GHz
Features
QUBiC4+
QUBiC4X
QUBiC4Xi
Release for production
CMOS/bipolar
2004
2006
2008
CMOS 0.25 um, bipolar 0.4 um,
double poly, deep trench, Si
CMOS 0.25 um, bipolar LV 0.4 um,
double poly, deep trench, SiGe:C
CMOS 0.25 um, bipolar LV 0.3 um,
double poly, deep trench, SiGe:C
LV NPN fT/Fmax (GHz)
HV NPN fT/Fmax (GHz)
NPN BVce0: HV/LV **
V-PNP fT / BVcb0 (GHz / V)
35/80 (Si)
28/70 (Si)
110/140 (SiGe:C)
60/120 (SiGe:C)
3.2 / 2.0 V
180/200 (SiGe:C)
90/200 (SiGe:C)
2.5 / 1.4 V
5.9 / 3.8 V
5 / >9
Planned
Planned
CMOS voltage /
dual gate
2.5 / 3.3 V
2.5 V
2.5 V
Noise figure NPN (dB)
RFCMOS fT (GHz)
2 GHz: 1.1
10 GHz: 1.0
10 GHz: 0.6
NMOS 58, PMOS 19
STI and DTI
5 LM, 3 µm top metal
NMOS 58, PMOS 19
STI and DTI
NMOS 58, PMOS 19
STI and DTI
Isolation (60 dB @ 10 GHz)
Interconnection
(AlCu with CMP W Plugs)
5 LM, 3 µm top metal
2 µm M4
5 LM, 3 µm top metal
NW, DN, Poly-Poly
5fF/um2 MIM
NW, DN, Poly-Poly
5fF/um2 MIM
NW, DN, Poly-Poly
5fF/um2 MIM
Capacitors
Poly (64/137/220/2K) Active (12, 57),
high-precision SiCr (270)
Poly (64/220/330/2K), Active (12, 57),
high-precision SiCr (tbd)
Poly (64/220/330/2K), Active (12, 57),
high-precision SiCr (tbd)
Resistors (Ω/sq)
Varicaps (single-ended &
differential)
1x single-ended, Q > 40
3x differential, Q 30-180
1x single-ended, Q > 40
3x differential, Q 30-180
1x single-ended, Q > 40
3x differential, Q 30-180
Inductors (1.5nH @ 2 GHz)
- scalable
Q > 21, thick metal, deep trench isolation,
high R substrate
Q > 21, thick metal, deep trench isolation,
high R substrate
Q > 21, thick metal, deep trench isolation,
high R substrate
Other devices
Mask count
LPNP, isolated NMOS, VPNP, transformers
32 (MIM) / 34 / 33 (HVNPN) / 35 (VPNP)
Isolated-NMOS, transformers
36 (MIM)
Isolated-NMOS, transformers
36 (MIM)
NXP Semiconductors RF Manual 16th edition
73
2.6.4ꢀ High-performance,ꢀsmall-sizeꢀpackagingꢀenabledꢀbyꢀNXP'sꢀleadlessꢀpackageꢀplatformꢀꢀ
andꢀWL-CSPꢀtechnology
RF small-signal packaging is driven by two major trends which partly overlap
`Lower parasitics for better RF performance
`Smaller form factors for portable applications
To cope with these trends, NXP uses several approaches
`For non-space-restricted applications the use of flat-pack packages instead of gull-wing versions reduces the parasitic
impedance because of shorter lead length (e.g. SOT343F instead of SOT343). This results in better RF performance in
the Ku and Ka bands (13-20GHz). To reduce PCB board space, a smaller version (SOT1206) is also available.
SOT343
SOT343F
SOT1206
`For space-restricted applications there are two routes to reduce the form factor and parasitics:
- Leadless package platform
- Wafer Level Chip Scale Package (WL-CSP) technology
The leadless package (UTLP) platform (>25 variants already
released) is highly flexible with respect to package size,
package height, and I/O pitch. For example, the 6-pin
packages range in size from 1.45 x 1 x 0.5 mm with 0.5 mm
Wafer Level Chip Scale Package technology is ideally for
RF functions where the I/O pitch has to fit within the chip
area. With larger pitches and smaller designs (and thus little
effective chip area), it is more cost-effective to do the fan-out
pitch to 0.8 x 0.8 x 0.35 mm with 0.3 mm pitch. Package height using a leadless package instead of increasing the chip size.
of 0.25 mm is planned.
The absence of wires gives the lowest parasitic inductance
Because of the compact size of the design, wire lengths and
parasitic impedance are also restricted. The absence of leads
further reduces the inductance.
available.
SOT886
SOT891
SOT1208
0.65 x 0.44 x 0.29 mm (incl. 0.09 mm balls)
5 I/Os @ 0.22 mm pitch
74
NXP Semiconductors RF Manual 16th edition
3. Products by function
NXP RF product catalog:
http://www.nxp.com/rf
3.1
New products
DEV = in development
CQS = customer qualification samples
RFS = release for supply
Expected
status
June 2012
Planned
release
Type
Application / description
Section
NEW: Wideband transistors
BFU730LX
Gen7 wideband transistor
RFS
Released
3.3.1
NEW: SiGe:C LNAs (for e.g. GPS)
BGU8007
BGU7003W
BGU6101
BGU6102
BGU6104
GPS LNA, 19.0 dB gain, AEC-Q100
General-purpose unmatched LNA for FM radio
RFS
RFS
RFS
RFS
RFS
Released
Released
Released
Released
Released
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
Unmatched wideband MMIC w/ bias enable function & wide range of supply voltage
Unmatched wideband MMIC w/ bias enable function & wide range of supply voltage
Unmatched wideband MMIC w/ bias enable function & wide range of supply voltage
NEW: LNAs for set-top boxes
BGU7044
BGU7045
LNA for STB tuning
LNA for STB tuning
RFS
RFS
Released
Released
3.4.1
3.4.1
NEW: General-purpose wideband amplifiers (50 Ω gain blocks)
BGA2874
BGA2817
BGA2818
BGA2851
BGA2867
BGA2869
IF gain block 30.5 dB, 2.5 V
IF gain block 24 dB, 3 V
IF gain block 31 dB, 3 V
IF gain block 25 dB, 5 V
IF gain block 27 dB, 5 V
IF gain block 32.5 dB, 5 V
RFS
RFS
RFS
RFS
RFS
RFS
Released
Released
Released
Released
Released
Released
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
NEW: Medium power amplifier MMICs
BGA7014
BGA7017
BGA7020
BGA7130
Medium power amplifier, 12.0 dB ,13.0 dBm P1dB, SOT89
Dev
Dev
Dev
RFS
Q4 2012
Q4 2012
Q4 2012
Released
3.4.1
3.4.1
3.4.1
3.4.1
Medium power amplifier, 13.5 dB, 16.5 dBm P1dB, SOT89
Medium power amplifier, 13.0 dB, 18.5 dBm P1dB, SOT89
Medium power amplifier, 18.0 dB, 30 dBm P1dB, SOT908
NEW: VGAs for wireless infrastructures
BGA7351
BGA7210
BGA7204
50 MHz to 250 MHz high linearity variable gain amplifier - 28 dB gain range
RFS
RFS
RFS
Released
Released
Released
3.4.1
3.4.1
3.4.1
400 MHz to 2750 MHz high linearity variable gain amplifier
700 MHz to 3800 MHz high linearity variable gain amplifier
NEW: LNAs for wireless infrastructures
BGU7051
BGU7052
BGU7053
BGU7060
BGU7061
BGU7062
BGU7063
LNA 900 MHz - from 0.5 to 1.5 GHz
RFS
RFS
RFS
RFS
RFS
RFS
RFS
Released
Released
Released
Released
Released
Released
Released
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
LNA 1.9 GHz - from 1.5 to 2.5 GHz
LNA 2.5 GHz - from 2.3 to 2.8 GHz
LNA with variable gain from 700 to 800 MHz
LNA with variable gain from 700 to 950 MHz
LNA with variable gain from 1710 to 1785 MHz
LNA with variable gain from 1920 to 1980 MHz
NXP Semiconductors RF Manual 16th edition
75
Expected
status
June 2012
Planned
release
Type
Application / description
Section
NEW: PLL + VCO (LO generator) for wireless infrastructures
BGX7300 Rx LO generator, 400 MHz to 3 GHz
DEV
Q4 2012
3.4.2
NEW: IQ modulators for wireless infrastructures
BGX7100
BGX7101
IQ modulator, ouput power 0 dBm
IQ modulator, ouput power 4 dBm
RFS
RFS
Released
Released
3.4.2
3.4.2
NEW: Dual mixers for wireless infrastructures
BGX7220
BGX7221
Dual mixer, NF 8 dB, IIP3 30 dBm, P < 1 W, 700 MHz to 1.2 GHz
Dual mixer, NF 10 dB, IIP3 23 dBm, P < 1 W, 1.7GHz to 2.7 GHz
RFS
RFS
Released
Released
3.4.2
3.4.2
NEW: RF power transistors for base stations
BLF6G15L(S)-40RN
BLF6H10L(S)-160
Gen6 ceramic driver LDMOS transistor for GSM, WCDMA & LTE applications
RFS
DEV
DEV
RFS
Released
Q312
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
3.7.1
Gen6 ceramic high-voltage LDMOS transistor for GSM, WCDMA & LTE applications
Gen7 ceramic asymmetrical Doherty LDMOS transistor for GSM & LTE applications
Gen7 ceramic push-pull LDMOS transistor for WCDMA & LTE applications
Gen7 ceramic push-pull LDMOS transistor for WCDMA & LTE applications (gull-wing)
Gen8 ceramic LDMOS transistor for GSM, WCDMA & LTE applications
BLF7G20LS-260A
BLF7G24L(S)-160P
BLF7G27LS-90PG
BLF8G10L(S)-160V
BLF8G10LS-200GV
BLF8G10LS-270GV
BLF8G10L(S)-300P
BLF8G10LS-400PGV
BLF8G20L(S)-200V
BLF8G20LS-270GV
BLF8G20LS-270PGV
BLF8G22LS-160BV
BLF8G22LS-200GV
BLF8G22LS-270GV
BLF8G22LS-400PGV
BLF8G24L(S)-200P
BLF8G27LS-140G
BLF8G27LS-140V
BLF8G27LS-200PGV
BLF8G27LS-280PGV
BLM7G22S-60PB(G)
BLP7G07S-140P(G)
BLP7G09S-140P(G)
BLP7G22-10
Q412
Released
Released
Released
Q412
RFS
RFS
Gen8 ceramic LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing)
Gen8 ceramic LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing)
Gen8 ceramic LDMOS transistor for GSM & LTE applications
DEV
DEV
DEV
DEV
RFS
Q412
Q312
Q412
Released
Q412
Gen8 ceramic LDMOS transistor for GSM & LTE applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for GSM & LTE applications (gull-wing)
Gen8 ceramic LDMOS transistor for WCDMA & LTE applications
DEV
DEV
RFS
Q412
Released
Q312
Gen8 ceramic LDMOS transistor for WCDMA & LTE applications (gull-wing)
Gen8 ceramic LDMOS transistor for WCDMA & LTE applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for WCDMA & LTE applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for WCDMA & LTE applications
Gen8 ceramic LDMOS transistor for WCDMA & LTE applications (gull-wing)
Gen8 ceramic LDMOS transistor for WCDMA & LTE applications
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
Q312
Q312
Q312
Q412
Q412
Gen8 ceramic push-pull LDMOS transistor for WCDMA & LTE applications (gull-wing)
Gen8 ceramic push-pull LDMOS transistor for WCDMA & LTE applications (gull-wing)
Gen7 LDMOS MMIC for WCDMA applications (gull-wing)
Q412
Q412
Q312
Gen7 OMP push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing)
Gen7 OMP push-pull LDMOS transistor for GSM, WCDMA & LTE applications (gull-wing)
Gen7 OMP LDMOS transistor for WCDMA & GSM applications
Q412
Q412
Q312
NEW: RF power transistors for broadcast / ISM applications
BLF174XR(S)
XR ceramic push-pull LDMOS transistor for ISM applications
DEV
RFS
DEV
RFS
DEV
RFS
DEV
DEV
DEV
RFS
DEV
Q312
Released
Q312
3.7.2
3.7.2
3.7.2
3.7.2
3.7.2
3.7.2
3.7.2
3.7.2
3.7.2
3.7.2
3.7.2
BLF178XR(S)
XR ceramic push-pull LDMOS transistor for FM broadcast & ISM applications
Gen6 ceramic push-pull LDMOS transistor for 2.45 GHz ISM applications
Gen7 ceramic LDMOS transistor for 2.45GHz ISM applications
BLF2425M6L(S)180P
BLF2425M7L(S)140
BLF2425M7L(S)200
BLF2425M7L(S)250P
BLF25M612(G)
BLF572XR(S)
Released
Q412
Gen7 ceramic LDMOS transistor for 2.45GHz ISM applications
Gen7 ceramic push-pull LDMOS transistor for 2.45 GHz ISM applications
Gen6 ceramic LDMOS driver transistor for 2.45 GHz ISM applications (gull-wing)
XR ceramic push-pull LDMOS transistor for ISM applications
Released
Q312
Q412
BLF574XR(S)
XR ceramic push-pull LDMOS transistor for ISM applications
Q312
BLF578XR(S)
XR ceramic push-pull LDMOS transistor for UHF broadcast & ISM applications
Ceramic push-pull LDMOS transistor for broadband applications
Released
Q312
BLF647P(S)
76
NXP Semiconductors RF Manual 16th edition
Expected
status
June 2012
Planned
release
Type
Application / description
Section
NEW: RF power transistors for aerospace and defense
BLL6G1214LS-250
BLL6H1214LS-500
BLS6G2735L(S)-30
BLS7G2729L(S)-350P
BLS7G3135L(S)-350P
BLU6H0410L(S)-600P
Gen6 ceramic LDMOS transistor for L-band applications
RFS
DEV
RFS
RFS
DEV
RFS
Released
Q412
3.7.3
3.7.3
3.7.3
3.7.3
3.7.3
3.7.3
Gen6 high-voltage ceramic LDMOS transistor for L-band applications
Gen6 ceramic LDMOS driver transistor for S-band radar applications
Gen7 ceramic push-pull LDMOS transistor for S-band radar applications
Gen7 ceramic push-pull LDMOS transistor for S-band radar applications
Gen6 high-voltage ceramic push-pull LDMOS transistor for UHF band radar applications
Released
Released
Q412
Released
NEW: Gallium Nitride (GaN) RF power amplifiers
CLF1G0060-10
CLF1G0060-30
CLF1G0035-50
CLF1G0035-100
Gen1 GaN broadband amplifier
Gen1 GaN broadband amplifier
Gen1 GaN broadband amplifier
Gen1 GaN broadband amplifier
DEV
DEV
DEV
DEV
Q113
Q113
Q312
Q412
3.7.4
3.7.4
3.7.4
3.7.4
NEW: Low-power wireless microcontrollers and networking stacks
JN5142-J01
JenNet-IP
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
RFS
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
Released
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
JN5142-001
JN5148-J01
JN5148-001
JN5148-Z01
JN5148-001-M00
JN5148-001-M03
JN5148-001-M04
JenNet
RF4CE / IEEE802.15.4
JenNet-IP
JenNet / IEEE802.15.4
ZigBee
JenNet / IEEE802.15.4
JenNet / IEEE802.15.4
JenNet / IEEE802.15.4
Networking stack
Networking stack
Networking stack
JenNet-IP
ZigBee PRO
NXP Semiconductors RF Manual 16th edition
77
3.2
RF diodes
3.2.1 Varicap diodes
Varicap selection guide on www.nxp.com/varicaps
Easy-to-use parametric filters help you choose
the right varicap for your design.
Why choose NXP’s varicap diodes:
` Reference designs for TV and radio tuning
` Direct matching process
` Small tolerances
` Short lead time
` Complete portfolio covering broad range of frequencies and packages (including leadless)
` Reliable volume supply
VCO and FM radio tuning varicap diodes
@ f = 1 MHz
Cd Cd
rs
typ
rs
max
Number
of
diodes
@ f =
Config-
uration
Cd
Cd
Cd
@ VR
=
Cd
min
@ VR
=
@ V1 @ V2
Cd1
Cd2
min max
/
Cd1
Cd2
/
Type
Package
min typ max
typ max
=
=
(pF) (pF) (pF)
(V)
(pF)
(pF) (pF)
(V)
(V)
(V)
(Ω)
(Ω)
(MHz)
BB145B
BB156
BB198
BB199
SOD523
SOD323
SOD523
SOD523
SOT23
SOD523
SOT23
SOD523
SOD323
1
1
1
1
2
1
2
1
1
SG
SG
SG
SG
CC
SG
CC
SG
SG
6.4
14.4
25
36.5
89
28.2
76
19.9
19.9
-
16
-
-
95
-
81
-
-
7.2
17.6
28.5
42.5
102
33.5
86
1
1
1
0.5
1
0.2
1
2.55
4.2
4.8
11.8
25.5
7.2
25.5
4.5
-
4.8
-
2.95
5.4
6.8
4
7.5
4
2.2
2.7
-
2.8
3.1
2.5
2.6
3.7
3.7
-
3.9
-
1
1
-
0.5
1
0.2
1
4
7.5
-
-
0.4
-
0.25
0.25
0.35
0.2
0.35
0.35
0.6
0.7
0.8
-
0.5
0.6
0.4
0.5
0.5
470
470
100
100
100
100
100
100
100
-
13.8
2
-
2
BB201
27.6 29.7
11.2
27.6 29.7
7.5
2.3
7.5
7.5
7.5
3.8
-
3.3
5.2
5.2
7.5
2.3
7.5
7.5
7.5
BB202^^
BB207^
BB208-02^
BB208-03^
-
23.2
23.2
1
1
-
-
5.4
5.4
1
1
4.5
^ Includes special design for FM car radio (CREST-IC:TEF6860)
^^ Includes special design for mobile phone tuner ICs
Type of connection:
CC:
SG:
common cathode
single
TV / VCR / DVD / HDD varicap diodes - UHF tuning
@ f = 1 MHz
rs
typ
rs
max
@
@ V1 @ V2
@
Ns
=
@ f =
Cd
min
Cd
typ
Cd
max
@ VR
=
@ V1 @ V2
d1/Cd2
∆Cd/
Cd
Cd
=
=
=
Type
Package
Cd1/Cd2 Cd1/Cd2
min
C
=
=
typ
max
(pF)
(pF)
(pF)
(V)
(V)
(V)
(Ω)
(Ω)
(MHz) (pF)
(V)
(V)
Matched
BB149
BB149A
BB179
BB179B
BB179BLX
BB179LX
BB184
SOD323
SOD323
SOD523
SOD523
SOD882D
SOD882D
SOD523
SOD523
1.9
1.951
1.951
1.9
2.1
2.1
2.1
2.1
-
2.1
2
2.04
2.25
2.225
2.225
2.25
2.25
2.22
2.13
28
28
28
28
28
28
10
25
8.2
8.45
8.45
8.45
-
8.45
6
6.3
9
9
9
9
9
9
7
7.3
10
10.9
10.9
10
-
10.9
-
-
1
1
1
1
1
1
1
2
28
28
28
28
28
28
10
25
-
0.75
0.75
0.75
0.75
-
-
-
0.7
470
470
470
470
470
470
470
470
9
9
9
9
9
30
9
9
2
2
2
2
2
2
2
1.8
0.5
1
1
1
1
1
1
2
28
28
28
28
28
28
10
25
10
10
10
10
10
5
0.6
0.6
0.6
0.65
0.65
0.65
0.65
1.9
1.95
1.87
1.89
5
10
BB189
2.18
Unmatched
BB135
SOD323
1.7
-
2.1
28
8.9
-
12
0.5
28
-
0.75
470
9
-
-
-
-
Bold = highly recommended product
78
NXP Semiconductors RF Manual 16th edition
TV / VCR / DVD / HDD varicap diodes - VHF tuning
@ f = 1 MHz
rs
typ
rs
max
@ Cd
=
@ V1
=
@ V2
=
@ f =
Cd
min
Cd
typ
Cd
max
@ VR
=
@ V1
=
@ V2
=
∆Cd/
Cd
@ Ns
=
Cd1
Cd2
/
Cd1
/
Cd2
Cd1/
Cd2
Type
Package
min
typ
max
(pF)
(pF)
(pF)
(V)
(V)
(V)
(Ω)
(Ω)
(MHz)
(pF)
(V)
(V)
Matched
BB148
BB152
BB153
BB178
BB178LX
BB182
BB187
BB187LX
Unmatched
BB131
SOD323
SOD323
SOD323
SOD523
SOD882D
SOD523
SOD523
SOD882D
2.4
2.48
2.361
2.361
2.36
2.48
2.57
2.57
2.6
2.7
2.6
2.6
2.6
2.7
2.75
2.75
2.75
2.89
2.754
2.754
2.75
2.89
2.92
28
28
28
28
28
28
25
25
14.5
20.6
13.5
13.5
13.5
20.6
11
15
22
15
15
15
22
-
-
-
-
-
-
-
-
-
1
1
1
1
1
1
2
2
28
28
28
28
28
28
25
25
-
1
0.65
0.65
0.7
1
0.9
1.2
0.8
0.8
-
1.2
0.75
0.75
100
100
100
100
470
100
470
470
12
30
30
30
30
30
-
2
2
2
2
2
2
2
2
0.5
1
1
1
1
1
2
2
28
28
28
28
28
28
25
25
10
10
10
10
5
10
10
10
-
-
2.92
11
-
-
SOD323
SOD523
SOT23
0.7
0.7
4.3
-
-
-
1.055
1.055
6
28
28
25
12
12
5
-
-
-
16
16
6.5
0.5
0.5
3
28
28
25
-
-
-
3
3
0.7
470
470
200
9
9
25
-
-
-
-
-
-
-
-
-
-
-
-
BB181
BBY40
3.2.2 PIN diodes
brb407
Freq = 100 MHz, C @ V = 0 V
700
C
d
d
R
(fF)
rD @ 0.5 mA
rD @ 10 mA
600
BAP65LX
BAP65LX
PIN diode selection guide on www.nxp.com/pindiodes
Easy-to-use parametric filters help you choose the right
PIN diode for your design.
500
400
300
200
100
0
BAP50LX
BAP50LX
BAP63LX
BAP1321LX
BAP63LX
BAP51LX
BAP1321LX
BAP51LX
BAP142LX
BAP64LX
BAP142LX
BAP64LX
BAP70-02
10
BAP70-02
−1
10
2
1
10
Why choose NXP’s PIN diodes:
` Broad portfolio
r
(Ω)
D
brb408
25
Freq = 1800 MHz, Isolation @ V = 0 V
R
Isolation
(dB)
Insertion Loss @ 0.5 mA
Insertion Loss @ 10 mA
20
15
10
5
` Unrivalled performance
` Short lead time
BAP70-02
BAP70-20
BAP51LX
BAP50LX
BAP64LX
BAP50LX
BAP64LX
BAP51LX
BAP142LX
BAP142LX
BAP1321LX
BAP1321LX
BAP63LX
` Low series inductance
` Low insertion loss
BAP63LX
BAP65LX
BAP65LX
` Low capacitance
0
10
−2
−1
10
1
10
Insertion Loss (dB)
For more information: www.nxp.com/pindiodes
PIN diodes: typical rD @ 1 mA ≤ 2, switching diodes
@ f = 100 MHz
@ IF = 0.5 mA @ IF = 1 mA @ IF = 10 mA
@ f = 1 MHz
@ VR = 1 V @ VR = 20 V
@ VR
= 0 V
Number of
diodes
V
R max
(V)
IF max
(mA)
Type
Package
Config
rD
rD
rD
rD
rD
rD
Cd
Cd
Cd
Cd
Cd
typ
(Ω)
max
(Ω)
typ
(Ω)
max
(Ω)
typ
(Ω)
max
(Ω)
typ
(pF)
typ
(pF)
max
(pF)
typ
(pF)
max
(pF)
BAP65LX
BAP65-02
BAP65-03
BAP65-05
BAP65-05W
BAP63LX
BAP63-02
BAP63-03
BAP63-05W
SOD882D
SOD523
SOD323
SOT23
SOT323
SOD882D
SOD523
SOD323
SOT323
1
1
1
2
2
1
1
1
2
SG
SG
SG
CC
CC
SG
SG
SG
CC
30
30
30
30
30
50
50
50
50
100
100
100
100
100
100
100
100
100
-
-
-
-
-
2.3
2.5
2.5
2.5
-
-
-
-
-
0.94
1
1
1
1
1.87
1.95
1.95
1.95
-
-
-
-
-
3
3
3
3
0.49
0.56
0.56
0.56
0.56
1.19
1.17
1.17
1.17
0.9
0.9
0.9
0.9
0.9
1.8
1.8
1.8
1.8
0.61
0.65
0.65
0.7
0.48
0.55
0.55
0.575
0.575
0.29
0.32
0.35
0.35
0.85
0.9
0.9
0.9
0.9
-
-
-
-
0.37
0.375
0.375
0.425
0.425
0.24
0.25
0.27
0.3
-
-
-
-
-
0.7
3.3
3.5
3.5
3.5
0.34
0.36
0.4
0.3
0.32
0.32
0.35
0.4
PIN diode: selection on isolation and insertion loss in SOD882D
ISL (isolation )
IL (Insertion loss)
f =
f =
f =
f =
f =
f =
Type
900 MHz 1800 MHz 2450 MHz
900 MHz
1800 MHz
2450 MHz
VR =
0 V
10
VR =
0 V
5.5
10.5
14
VR =
0 V
3.9
8.3
12
IF =
IF =
IF =
IF =
IF =
IF =
IF =
IF =
IF =
IF =
IF =
IF =
0.5 mA 1 mA
10 mA 100 mA 0.5 mA 1 mA
10 mA 100 mA 0.5 mA 1 mA
10 mA 100 mA
BAP65LX
BAP63LX
BAP55LX
BAP1321LX
BAP142LX
BAP51LX
BAP64LX
BAP50LX
0.09
0.20
0.24
0.25
0.24
0.36
1.22
1.82
0.06
0.17
0.17
0.19
0.18
0.25
0.22
1.07
0.06
0.12
0.08
0.11
0.10
0.12
0.12
0.25
0.05
0.11
0.05
0.09
0.07
0.90
0.09
-
0.09
0.20
0.25
0.26
0.24
0.36
1.21
1.80
0.07
0.17
0.18
0.20
0.19
0.26
0.23
1.06
0.07
0.13
0.09
0.13
0.11
0.14
0.13
0.26
0.06
0.11
0.07
0.11
0.09
0.10
0.10
-
0.10
0.21
0.26
0.27
0.25
0.38
1.22
1.81
0.08
0.19
0.19
0.21
0.25
0.27
0.24
1.08
0.08
0.15
0.10
0.14
0.12
0.15
0.15
0.27
0.07
0.15
0.08
0.12
0.10
0.12
0.11
-
15.9
19
17
12
10
18
13
15
16
17.9
11
13
14
16.5
19
22
20.3
Bold = highly recommended product
NXP Semiconductors RF Manual 16th edition
79
PIN diodes: typical rD @ 1 mA = 2.2 - 2.4, switching diodes
@ f = 100 MHz
@ f = 1 MHz
@ VR = 1 V @ VR = 20 V
@ VR
= 0 V
Cd
typ
(pF)
0.28
0.4
@ IF = 0.5 mA @ IF = 1 mA @ IF = 10 mA
Number of
diodes
V
R max
(V)
IF max
(mA)
Type
Package
Config
rD
typ
(Ω)
3.3
3.4
3.4
3.4
3.3
3.3
rD
max
(Ω)
4.5
5
5
5
5
5
rD
typ
(Ω)
2.2
2.4
2.4
2.4
2.4
2.4
rD
max
(Ω)
3.3
3.6
3.6
3.6
3.6
3.6
rD
typ
(Ω)
0.8
1.2
1.2
1.2
1.2
1
rD
max
(Ω)
1.2
1.8
1.8
1.8
1.8
1.8
Cd
typ
Cd
max
(pF)
-
0.45
0.45
0.45
0.38
-
Cd
typ
(pF)
0.18
0.25
0.25
Cd
max
(pF)
0.28
0.32
0.32
(pF)
0.23
0.35
0.35
0.375
0.27
0.22
BAP55LX
SOD882D
SOD523
SOD323
SOT23
SOD882D
SOD882D
1
1
1
2
1
1
SG
SG
SG
SR
SG
SG
50
60
60
60
60
50
100
100
100
100
100
100
BAP1321-02
BAP1321-03
BAP1321-04
BAP1321LX
BAP142LX
0.4
0.42
0.32
0.25
0.275 0.325
0.21
0.16
0.28
0.26
PIN diodes: typical rD @ 1 mA = 3.2 - 3.6, switching diodes
@ f = 100 MHz
@ f = 1 MHz
@ VR = 1 V
@ VR
= 0 V
Cd
typ
(pF)
0.3
0.4
0.4
0.4
0.4
@ IF = 0.5 mA @ IF = 1 mA @ IF = 10 mA
@ VR = 20 V
Number
of diodes
V
R max
(V)
IF max
(mA)
Type
Package
Config
rD
typ
(Ω)
4.9
5.5
5.5
5.5
5.5
5.5
rD
max
(Ω)
9
9
9
9
9
-
rD
typ
(Ω)
3.2
3.6
3.6
3.6
3.6
3.6
rD
max
(Ω)
6.5
6.5
6.5
6.5
6.5
-
rD
typ
(Ω)
1.4
1.5
1.5
1.5
1.5
2
rD
max
(Ω)
2.5
2.5
2.5
2.5
2.5
-
Cd
typ
(pF)
0.22
0.3
Cd
max
(pF)
0.4
0.55
0.55
0.55
0.55
-
Cd
typ
(pF)
0.17
0.2
Cd
max
(pF)
0.3
BAP51LX
BAP51-02
BAP51-03
BAP51-04W
BAP51-05W
BAP51-06W
SOD882D
SOD523
SOD323
SOT323
SOT323
SOT323
1
1
1
2
2
2
SG
SG
SG
SR
CC
CA
60
60
50
50
50
50
100
50
50
50
50
50
0.35
0.35
0.35
0.35
-
0.3
0.3
0.2
0.2
0.2
0.2
0.3
0.3
0.4
PIN diodes: typical rD @ 1 mA = 10, attenuator/switching diodes
@ f = 100 MHz
@ f = 1 MHz
@ VR = 1 V @ VR = 20 V
@ VR
0 V
Cd
=
@ IF = 0.5 mA @ IF = 1 mA @ IF = 10 mA
Number
of diodes
V
R max
(V)
IF max
(mA)
Type
Package
Config
rD
typ
(Ω)
20
20
20
20
20
20
20
20
20
31
rD
max
(Ω)
40
40
40
40
40
40
40
rD
typ
(Ω)
10
10
10
10
10
10
10
10
10
16
rD
max
(Ω)
20
20
20
20
20
20
20
rD
typ
(Ω)
2
2
2
2
2
2
2
rD
max
(Ω)
3,8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
3.8
4.4
Cd
typ
Cd
max
Cd
typ
Cd
typ
(pF)
0.52
0.48
0.48
0.52
0.52
0.52
0.52
0.52
0.52
0.48
max
(pF)
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.35
0.3*
(pF)
0.37
0.35
0.35
0.37
0.37
0.37
0.37
0.37
0.37
0.34
(pF)
(pF)
0.23
0.23
0.23
0.23
0.23
0.23
0.23
0.23
0.23
0.17*
BAP64Q
SOT753
SOD523
SOD323
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
SOD882D
4
1
1
2
2
2
2
2
2
1
SR
SG
SG
SR
SR
CC
CC
CA
CA
100
175
175
175
100
175
100
175
100
60
100
100
100
100
100
100
100
100
100
100
-
-
-
-
-
-
-
-
-
-
BAP64-02
BAP64-03
BAP64-04
BAP64-04W
BAP64-05
BAP64-05W
BAP64-06
BAP64-06W
BAP64LX^
40
40
50
20
20
26
2
2
2.6
SG
^ = attenuator / switching diode
*= @ VR = 20 V
PIN diodes: typical rD @ 1 mA = 14 - 16, attenuator diodes
@ f = 100 MHz
@ f = 1 MHz
@ VR = 1 V
@ VR
0 V
Cd
typ
(pF)
0.4
=
@ IF = 0.5 mA @ IF = 1 mA @ IF = 10 mA
@ VR = 5 V
Number
of diodes
V
R max
(V)
IF max
(mA)
Type
Package
Config
rD
typ
(Ω)
25
25
25
25
25
25
26
rD
max
(Ω)
40
40
40
40
40
40
40
rD
typ
(Ω)
14
rD
max
(Ω)
25
rD
typ
(Ω)
3
3
3
3
3
3
3
rD
max
(Ω)
5
5
5
5
5
5
5
Cd
typ
(pF)
0.3
Cd
max
(pF)
0.55
0.55
0.6
0.6
0.5
0.6
Cd
typ
(pF)
0.22
0.2
0.3
0.3
0.35
0.3
Cd
max
(pF)
0.35
0.35
0.5
0.5
0.6
0.5
0.35
BAP50-02
BAP50-03
BAP50-04
BAP50-04W
BAP50-05
BAP50-05W
BAP50LX
SOD523
SOD323
SOT23
SOT323
SOT23
1
1
2
2
2
2
1
SG
SG
SR
50
50
50
50
50
50
50
50
50
50
50
50
50
50
14
25
0.4
0.3
14
25
0.45
0.45
0.45
0.45
0.4
0.35
0.35
0.3
0.35
0.28
SR
14
25
CC
CC
SG
14
25
SOT323
SOD882D
14
25
14
25
0.55
0.19
PIN diodes: typical rD @ 1 mA = 40, attenuator diodes
@ f = 100 MHz
@ IF = 1 mA @ IF = 10 mA
@ f = 1 MHz
@ VR = 1 V
@ IF = 0.5
mA
@ VR
= 0 V
@ VR = 20 V
Number
of diodes
V
R max
(V)
IF max
(mA)
Type
Package
Config
rD
typ
(Ω)
77
rD
max
(Ω)
100
100
100
100
100
100
rD
typ
(Ω)
40
40
40
40
40
40
rD
max
(Ω)
50
50
50
50
50
50
rD
typ
(Ω)
5.4
5.4
5.4
5.4
5.4
5.4
rD
max
(Ω)
7
7
7
7
7
7
Cd
typ
(pF)
0.6
0.57
0.57
0.6
Cd
typ
(pF)
0.43
0.4
Cd
max
(pF)
-
-
-
-
-
-
Cd
max
(pF)
0.25
0.2
Cd
typ
(pF)
0.3
BAP70Q
SOT753
SOD523
SOD323
SOT323
SOT23
4
1
1
2
2
4
SR
SG
SG
SR
CC
SR
50
50
50
50
50
50
100
100
100
100
100
100
BAP70-02
BAP70-03
BAP70-04W
BAP70-05
BAP70AM
77
77
0.25
0.25
0.3
0.4
0.2
77
77
0.43
0.43
0.4
0.25
0.25
0.2
0.6
0.57
0.3
0.25
SOT363
77
Bold = highly recommended product
SG = single
SR = series
CC = common cathode
CA = common anode
80
NXP Semiconductors RF Manual 16th edition
3.2.3 Band-switch diodes
Why choose NXP’s band-switch diodes:
` Reliable volume supplier
` Short lead time
` Low series inductance
` Low insertion loss
` Low capacitance
` High reverse isolation
V
R max
(V)
IF max
(mA)
rD max
(Ω)
@ IF =
(mA)
@ f =
(MHz)
Cd max
(pF)
@ VR
(V)
=
@ f =
(MHz)
Type
Package
BA277
BA591
BA891
BAT18
SOD523
SOD323
SOD523
SOT23
35
35
35
35
100
100
100
100
0.7
0.7
0.7
0.7
2
3
3
5
100
100
100
200
1.2
0.9
0.9
1
6
3
3
1
1
1
1
20
3.2.4 Schottky diodes
Schottky diode selection guide on www.nxp.com/rfschottkydiodes
Easy-to-use parametric filters help you choose the right Schottky
diode for your design.
Why choose NXP’s Schottky diodes:
` Low diode capacitance
` Low forward voltage
` Single- and triple-isolated diode
` Small package
Applications
` Digital applications:
- Ultra high-speed switching
- Clamping circuits
` RF applications:
- Diode ring mixer
- RF detector
- RF voltage doubler
Low-capacitance Schottky diodes
V
R max.
(V)
4
4
4
4
4
4
15
15
15
15
15
15
15
IF max.
(mA)
30
30
30
30
30
30
30
30
30
30
30
30
30
VF max.
(mV)
CD max.
(pF)
Type
Package
Configuration
BAT17
PMBD353
SOT23
SOT23
SOT23
Single
Dual-series
Dual-series
Single
Triple-isolated
Single
Triple-isolated
Single
Dual-series
Dual c.c
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
450 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
340 @ IF = 1 mA
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
1 @ VR = 0 V
PMBD354^
1PS76SB17
1PS66SB17
1PS79SB17
1PS88SB82
1PS70SB82
1PS70SB84
1PS70SB85
1PS70SB86
1PS66SB82
1PS10SB82
SOD323
SOT666
SOD523
SOT363
SOT323
SOT323
SOT323
SOT323
SOT666
SOD882
Dual c.a.
Triple-isolated
Single
Bold = highly recommended product
^ Diodes have matched capacitance
NXP Semiconductors RF Manual 16th edition
81
3.3
RF Bipolar transistors
3.3.1 Wideband transistors
RF wideband transistor selection guide onwww.nxp.com/rftransistors
Easy-to-use parametric filters help you choose the right RF wideband
transistor for your design.
Why choose NXP’s wideband transistors:
` Broad portfolio (1st - 7th generation)
` Short lead time
Wideband transistors
The fT-IC curve represents transition frequency (fT)
characteristics as a function of collector current (IC) for the seven
generations of RF wideband transistors. A group of transistors
having the same IC and similar fT represents a curve. The curve
number matches with products in the selection tables of
this section (third column of each table), detailing their RF
characteristics.
` Smallest packages
` Volume delivery
Wideband transistors line-up per frequency
bra510
100
(33)
(37)
th
7
generation
(39)
f
T
(GHz)
(27)
(41)
(36)
(35)
(29)
(40)
(26)
th
th
(32)
6
5
generation
generation
(25)
(38)
(21)
th
4
generation
(31)
(23)
(22)
10
(20)
(30)
(7)
(19)
(34)
(15)
(16)
(14)
rd
3
generation
(18)
(11)
(12)
(9)
(8)
(4)
(10)
nd
st
2
generation
(1)
(3)
1
generation
500 1000
1
0.1
0.2
0.5
1
2
5
10
20
50
100
200
I
C
(mA)
Pin
Description
Type (Figure 1)
Collector
1
2
3
4
Base
Emitter
Emitter
4
3
2
3
2
4
Type/X (Figure 1)
Collector
Emitter
1
2
3
4
Base
Emitter
1
1
Type/XR (Figure 2)
Collector
Emitter
Figure 1
Figure 2
1
2
3
4
Base
Emitter
82
NXP Semiconductors RF Manual 16th edition
Wideband transistors
High-linearity, high-output amplifiers and
drivers
Function
LNAs, mixers, frequency multipliers, buffers
Oscillators
6 GHz –
12 GHz
12 GHz –
+18 GHz
6 GHz –
12 GHz
12 GHz –
18 GHz
6 GHz –
12 GHz
12 GHz –
+18 GHz
Frequency range
<6 GHz
L,S,C
<6 GHz
<6 GHz
L,S,C
Band
X, Ku low
Ku high, Ka
L,S,C
X, Ku low
Ku high
X, Ku low
Ku high, Ka
Type
BFU610F
BFU630F
BFU660F
BFU690F
BFU725F/N1
BFU710F
BFU730F
BFU760F
BFU790F
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Red = application note available on NXP.com
RF power transistors for portable equipment (VHF)
BFG10
BFG10/X
BFG10W/X
BLT50
SOT143
SOT143
SOT343
SOT223
SOT223H
SOT223
SOT223
8
8
10
10
8
10
9.5
250
250
250
500
250
250
500
400
400
NPN
NPN
NPN
NPN
NPN
NPN
NPN
7
7
7
-
1900
1
1
1
-
3.6
1900
3.6
400
1900
3.6
2000
2100
2000
2000
-
-
-
-
-
-
-
-
BLT70
-
-
BLT80
BLT81
-
-
-
-
RF wideband transistors generations 1 to 3
BFS17
BFS17W
BFT25
1
1
1
3
3
1
SOT23
SOT323
SOT23
1
15 25 300 NPN
-
-
-
-
-
-
1
-
-
1
-
-
12
-
-
-
-
1
-
-
1
4.5
4.5
3.8
500
500
500
2
2
1
5
5
1
-
-
-
-
-
-
-
-
-
-
-
-
1.6 15 50 300 NPN
2.3
5
6.5 30 NPN 18 500
800
BFG25A/X
BFG25AW
BFG25AW/X
BFG31
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
18
18
18
10
11
7
10
10
11
10
10
7
SOT143B
SOT343N
SOT343N
SOT223
SOT223
SOT143B
SOT223
SOT89
5
5
5
5
4
5
5
5
5
6.5 32 NPN
6.5 500 NPN
-
-
-
-
-
-
-
-
18 1000 0.5
16 2000 0.5
1
1
1
1.8 1000 0.5
1
1
1
-
-
-
-
-
-
3
-
-
-
-
-
-
-
-
-
-
2
2
-
1000
1
1
-
-
6.5 500 NPN 16 1000 0.5
1
8
2000 0.5
800
800 100 10
1000
-
-
-
-15 -100 1000 PNP 16 500 -70 -10 12
18 150 1000 NPN 15 500 100 10 11
15 25 400 NPN 16 1000 15 10 11 2000 15 10
5.5 15 100 1000 NPN 16 500 70 10 12
-70 -10
-
-
-
-
-
-
BFG35
-
-
1000
-
-
-
-
BFG92A/X
BFG97
2
-
5
-
10
-
2000
5
-
10
-
800
-
-
70 10
-
-
50 10 3.3
30
-
-
-
-
-
BFQ149
BFQ18A
BFQ19
5
4
-15 -100 1000 PNP 12 500 -50 -10
18 150 1000 NPN
-
-
-
-
3.75 500 -50 -10
-
-
SOT89
-
-
-
-
-
-
-
-
-
-
SOT89
5.5 15 100 1000 NPN 11.5 500 50 10 7.5
800
11.5 800
500
800
2000
1000
800
50 10
-
-
BFR106
SOT23
5
5
5
15 100 500 NPN
15 25 300 NPN 14 1000 15 10
15 25 300 NPN 14 1000 15 10
-
-
-
-
6
3.5
3
2
30
5
6
-
-
BFR92A
BFR92AW
BFS17A
SOT23
8
8
2000 15 10
2000 15 10
10 2.1 1000
5
5
-
10
10
-
7
4
SOT323
SOT23
5
10
5
1
1
3
-
2000
2.8 15 25 300 NPN
-
-
-
-
-
-
-
-
-
-
-
-
13.5 800
13 1000 0.5
15 1000 0.5
14 10 2.5
2
-
BFS25A
BFT25A
BFT92
BFT92W
BFT93
BFT93W
18
18
7
SOT323
SOT23
SOT23
SOT323
SOT23
SOT323
5
5
5
4
5
4
5
5
6.5 32 NPN
6.5 32 NPN
1
1
-
1.8 1000
1
-
-
-
-
1.8 1000 0.5
-
-
-
-
-15 -25 300 PNP 18 500 -14 -10
-
-
-
2.5
500
500
500
500
-5 -10
-5 -10
-10 -5
-10 -5
-
-
1000
-
-
-
7
-15 -35 300 PNP 17 500 -15 -10 11 1000 -15 -10 2.5
-12 -35 300 PNP 16.5 500 -30 -5 2.4
-12 -50 300 PNP 15.5 500 -30 -5 10 1000 -30 -5 2.4
3
-
-5 -10
9
-
-
9
3
1000 -10 -5
BFG135
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
16
15
22
22
22
14
14
8
SOT223
SOT223
SOT143B
SOT143B
SOT223
SOT143B
SOT143B
SOT143B
SOT143B
SOT223
SOT89
SOT323
SOT23
SOT23
SOT23
SOT323
SOT323
7
8
5
5
7
8
8
6
6
6
7
8
6
6
6
5
5
15 150 1000 NPN 16 500 100 10 12
800 100 10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BFG198
10 100 1000 NPN 18 500 50
15 200 400 NPN 13 900 80
15 200 400 NPN 13 900 80
8
4
4
15
800
50
8
4
4
BFG590
7.5 2000 80
7.5 2000 80
-
-
-
BFG590/X
BFG591
-
-
8
8
8
8
-
-
5
5
5
5
-
-
8
8
8
8
15 200 2000 NPN 13 900 70 12 7.5 2000 70 12
BFG67
10 50 380 NPN 17 1000 15
10 50 380 NPN 17 1000 15
12 35 300 NPN 16 1000 30
12 35 300 NPN 16 1000 30
8
8
8
8
-
10 2000 15
10 2000 15
10 2000 30
10 2000 30
8
8
8
8
1.7 1000 15
1.7 1000 15
1.7 1000
1.7 1000
2.5 2000
2.5 2000
2.3 2000
2.3 2000
BFG67/X
BFG93A
BFG93A/X
BFG94
5
5
8
8
12 60 700 NPN
-
-
-
13.5 1000 45 10 2.7
500
-
45 10
-
3
-
1000 45 10
-
BFQ591
BFQ67W
BFR93A
BFR94A^
BFR93AR
BFR93AW
BFR94AW^
22
14
8
15 200 2250 NPN 11 900 70 12 5.5 2000 70 12
-
-
-
-
10 50 300 NPN 13 1000 15
12 35 300 NPN 13 1000 30
12 35 300 NPN 13 1000 30
12 35 300 NPN 13 1000 30
12 35 300 NPN 13 1000 30
12 35 300 NPN 13 1000 30
8
8
8
8
8
8
8
7
7
7
8
8
2000 15
2000 30
2000 30
2000 30
2000 30
2000 30
8
8
8
8
8
8
1.3 1000
1.9 1000
1.9 1000
1.9 1000
1.5 1000
1.5 1000
5
5
5
5
5
5
8
8
8
8
8
8
2.7 2000 15
8
8
8
8
8
8
3
3
3
2000
2000
2000
5
5
5
5
5
8
8
8
2.1 2000
2.1 2000
8
Bold = highly recommended product ^ AEC-Q101 qualified (some limitations apply)
NXP Semiconductors RF Manual 16th edition
83
RF wideband transistors generations 4 and 4.5
BFG505
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
4
19 SOT143B
19 SOT143B
19 SOT343N
19 SOT343N
19 SOT343R
20 SOT143B
20 SOT143B
20 SOT143R
20 SOT343N
20 SOT343N
21 SOT143B
21 SOT143B
21 SOT143R
21 SOT343N
21 SOT343N
21 SOT343R
21 SOT223
19 SOT363A
20 SOT363A
21 SOT89
14 SOT23
19 SOT23
19 SOT416
20 SOT23
20 SOT416
21 SOT23
19 SOT323
20 SOT323
21 SOT323
20 SOT23
9
9
9
9
9
9
9
9
9
9
9
9
9
9
9
9
9
9
9
9
8
9
9
9
9
9
9
9
9
8
8
15 18 150 NPN 13 2000
15 18 150 NPN 13 2000
15 18 500 NPN 12 2000
15 18 500 NPN 12 2000
15 18 500 NPN 12 2000
15 70 300 NPN 13 2000 20
15 70 300 NPN 13 2000 20
15 70 300 NPN 13 2000 20
15 70 500 NPN 11 2000 20
15 70 500 NPN 11 2000 20
15 120 400 NPN 11 2000 40
15 120 400 NPN 11 2000 40
15 120 400 NPN 11 2000 40
15 120 500 NPN 10 2000 40
15 120 500 NPN 10 2000 40
15 120 500 NPN 10 2000 40
5
5
5
5
5
6
6
6
6
6
6
6
6
6
6
8
8
8
8
8
8
8
3
3
-
8
6
6
6
6
8
6
6
8
6
6
6
6
6
1.6 900
1.6 900
1.6 900
1.6 900
1.6 900
1.6 900 20
1.6 900 20
1.6 900 20
5
5
5
5
5
6
6
6
6
6
6
6
6
6
6
8
8
8
8
8
8
8
3
3
8
8
6
6
6
6
8
6
6
8
6
6
6
6
6
1.9 2000 1.25
1.9 2000 1.25
1.9 2000 1.25
1.9 2000 1.25
1.9 2000 1.25
6
6
6
6
6
6
6
6
6
6
8
8
8
8
8
8
8
3
3
-
8
6
6
6
6
8
6
6
8
6
6
6
6
6
4
4
4
4
4
6
6
6
6
6
6
6
6
6
6
8
8
8
8
8
8
8
-
900
900
900
900
900
5
5
5
5
5
10
10
10
10
10
5
5
5
5
5
6
6
6
6
6
6
6
6
6
6
8
8
8
8
8
8
8
-
BFG505/X
BFG505W
BFG505W/X
BFG505W/XR
BFG520
BFG520/X
BFG520/XR
BFG520W
BFG520W/X
BFG540
BFG540/X
BFG540/XR
BFG540W
BFG540W/X
BFG540W/XR
BFG541
BFM505
BFM520
BFQ540
BFQ67
BFR505
BFR505T
BFR520
BFR520T
BFR540
BFS505
1.9 2000
1.9 2000
1.9 2000
1.85 2000
1.85 2000
5
5
5
5
5
17
17
17
17
17
21
21
21
21
21
21
21
-
900 20 26 20
900 20 26 20
900 20 26 20
900 20 26 20
900 20 26 20
900 40 34 40
900 40 34 40
900 40 34 40
900 40 34 40
900 40 34 40
900 40 34 40
900 40 34 40
1.1 900
1.1 900
5
5
1.3 900 10
1.3 900 10
1.3 900 10
1.3 900 10
1.3 900 10
1.3 900 10
1.3 900 10
1.1 900
1.2 900
1.9 900 40
1.7 1000 15
1.2 900
1.2 900 1.25
1.1 900
1.1 900
1.3 900 10
1.2 900 1.25
2.1 2000 10
2.1 2000 10
2.1 2000 10
2.1 2000 10
2.1 2000 10
2.1 2000 10
2.1 2000 10
15 120 650 NPN
9
2000 40
8
8
18 500 NPN 10 2000
5
1
5
1.9 2000
1.9 2000
5
5
-
-
-
-
-
-
-
-
5
5
-
-
-
-
10
10
-
-
-
-
5
5
70 1000 NPN
9
-
2000 20
-
-
-
-
4
-
-
-
-
-
-
15 120 1,200 NPN
10 50 300 NPN
-
-
-
8
2000 15
2.7 2000 15
1.9 2000
1.9 2000 1.25
-
15 18 150 NPN 10 2000
15 18 150 NPN 10 2000
5
5
5
5
6
6
6
6
8
6
6
8
-
-
-
-
-
900
900
6
6
6
6
8
6
6
8
-
-
-
-
-
5
15 70 300 NPN
15 70 150 NPN
15 120 500 NPN
9
9
7
2000 20
2000 20
2000 40
5
5
1.9 2000
1.9 2000
5
5
17
17
21
4
17
21
-
-
-
-
-
900 20 26 20
900 20 26 20
900 40 34 40
2.1 2000 10
1.9 2000 1.25
15 18 150 NPN 10 2000
5
900
5
10
5
BFS520
BFS540
PBR941
PBR951
PRF947
PRF949
PRF957
15 70 300 NPN
15 120 500 NPN
9
8
2000 20
2000 40
1.1 900
1.3 900 10
5
1.9 2000
5
900 20 26 20
900 40 34 40
2.1 2000 10
10 50 360 NPN 9.5 2000 15
10 100 365 NPN 2000 30
8.5 10 50 250 NPN 10 2000 15
10 50 150 NPN 10 2000 15
8.5 10 100 270 NPN 9.2 2000 30
1.4 1000
1.3 1000
1.5 1000
1.5 1000
1.3 1000
5
5
5
5
5
2
2
2000
2000
5
5
5
5
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
21 SOT23
8
20 SOT323
20 SOT416
21 SOT323
2.1 2000
2.1 2000
1.8 2000
9
BFG310/XR
4.5 30 SOT143R 14
6
6
6
6
10
10
60 NPN 18 1800
60 NPN 18 1800
5
5
3
3
3
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1
1
2000
2000
1
1
3
3
3
3
3
3
1.8
1.8
8.7
8.7
3
3
3
3
1800
1800
5
5
8.5
8.5
5
5
3
3
3
3
BFG310W/XR 4.5 30 SOT343R 14
BFG325/XR 4.5 31 SOT143R 14
BFG325W/XR 4.5 31 SOT343R 14
35 210 NPN 18.3 1800 15
35 210 NPN 18.3 1800 15
1.1 2000
1.1 2000
1800 15 19.4 15
1800 15 19.4 15
RF wideband transistors generations 5 to 7
BFG21W
BFG403W
BFG410W
BFG424F
BFG424W
BFG425W
BFG480W
5
5
5
5
5
5
5
32 SOT343R
25 SOT343R
26 SOT343R
27 SOT343F
27 SOT343R
27 SOT343R
29 SOT343R
-
4.5 500 600 NPN 10 1900
1
3
3.6
-
1
-
-
-
-
-
-
-
-
5
5
12
12
12
-
-
-
1
-
6
-
1
-
17 4.5 3.6
22 4.5 12
25 4.5 30
25 4.5 30
25 4.5 30
16 NPN 22 2000
2
2
2
2
2
2
900
1
1
2
2
2
8
2
2
2
2
2
2
1.6 2000
1.2 2000
1.2 2000
1.2 2000
1.2 2000
1.8 2000
1
1
2
2
2
8
2
2
2
2
2
2
1
2
2
2
2
900
1
2
2
2
2
2
54 NPN 21 2000 10
135 NPN 23 2000 25
135 NPN 22 2000 25
135 NPN 20 2000 25
0.9 900
0.8 900
0.8 900
0.8 900
1.2 900
2000 10 15 10
2000 25 22 25
2000 25 22 25
2000 25 22 25
21 4.5 250 360 NPN 16 2000 80
20 3.6 2000
1
28 80
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU730LX
BFU760F
BFU790F
6
6
6
6
7
7
7
7
7
7
34 SOT343F 40
35 SOT343F 40
36 SOT343F 40
37 SOT343F 40
38 SOT343F 70 2.8 10
33 SOT343F 70 2.8 40
39 SOT343F 70 2.8 30
5
5
5
5
10
30
50 NPN 21 5800
130 NPN 28 2400 25
8
2
2
2
2
2
2
2
2
2
2
0.75 2400
0.58 1500
0.6 1500 20
0.7 1500 50
0.9 5800
0.47 2400
0.56 2400
0.55 2400
0.5 1500 20
0.56 1500 50
1
5
2
2
2
2
2
2
2
2
2
2
1.4 5800
0.73 2400
0.75 2400 20
0.9 2400 50
1.5 12000
0.7 5800
0.8 5800
0.8 5800
0.6 2400 20
0.7 2400 50
1
5
2
2
2
2
2
2
2
2
2
2
-
-
-
-
-
8
-
-
-
-
-
-
-
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
14
8
5
5
5
5
2
2
2
23 25
30 60
35 90
70 200 NPN 28.5 1500 60
100 300 NPN 25.6 1500 90
30 NPN 16.5 12000
8
2
5
5
5
2
5
5
5
14.5 8
136 NPN 18 5800 25
130 NPN 18.5 5800 25
160 NPN 13.3 5800 25
5800 25 19 25
-
-
-
-
-
-
-
-
20.5 25
26 12.4 2.3
23 60
24 90
-
SOT883C 53 3.0 30
40 SOT343F 70 2.8 70 200 NPN 25 2400 60
41 SOT343F 70 2.8 100 250 NPN 20.4 2400 90
2
2
Bold = highly recommended product
84
NXP Semiconductors RF Manual 16th edition
3.4
RF ICs
3.4.1 RF MMIC amplifiers and mixers
RF MMIC amplifiers and mixers selection guide on www.nxp.com/mmics
Easy-to-use parametric filters help you choose the right zRF MMIC for your design.
Why choose NXP's RF MMIC amplifiers and mixers:
` Reduced RF component count
` Easy circuit design-in
` Reduced board size
` Short time-to-market
` Broad portfolio
` Volume delivery
` Short lead time
General-purpose wideband amplifiers (50 Ω)
Gp [dB]
Pl(1dB) [dBm]
NF [dB]
IP3o[dBm]
Zout
External
Inductor
Type
Package
250
MHz
500
MHz
750
MHz
250
500
750
250
MHz
500
MHz
750
MHz
250
750
MHz
Vcc (V) Is (mA)
[Ohm]
MHz
MHz
MHz
MHz
BGA2870
BGA2874
SOT363
SOT363
2.5
2.5
15.6
16.0
31.2
31.1
250
31.1
31.0
950
31.0
30.6
2150
MHz
5.0
5.0
250
MHz
4.0
4.0
950
MHz
4.0
4.0
2150
MHz
3.1
3.0
250
MHz
3.2
3.1
950
MHz
3.7
3.4
2150
MHz
15.0
19.0
950
13.0
17.0
2150
MHz
50
50
N
N
MHz
MHz
MHz
BGA2800
BGA2803
BGA2748
BGA2714
BGA2801
BGA2802
BGA2815
BGA2817
BGA2819
BGM1012
BGA2816
BGA2818
BGA2819
BGA2850
BGA2851
BGA2715
BGA2717
BGA2712
BGA2866
BGA2867
BGA2709
BGA2716
BGA2776
BGA2865
BGA2868
BGA2869
BGM1013
BGM1014
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
3
3
3
3
3
3
3
3
3
3
3
3
3
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
10.5
5.8
5.7
19.9
23.6
17.6
20.7
22.2
25.6
25.8
24.5
27.0
19.6
31.9
30.1
30.0
23.2
23.3
15.6
20.0
21.1
23.2
26.4
22.5
22.4
22.9
30.9
31.5
30.9
35.3
30.2
20.5
23.4
21.9
20.4
22.4
25.8
25.3
24.7
27.0
20.0
32.0
29.8
30.0
24.0
24.7
21.5
24.2
21.2
23.9
27.2
22.7
22.8
23.2
32.2
32.8
30.9
35.6
32.2
20.2
23.0
17.8
20.8
23.0
25.5
25.2
25.1
28.0
20.4
26.9
30.0
31.0
22.9
25.2
23.3
25.1
22.0
24.3
27.2
23.0
22.9
23.2
29.6
33.5
32.2
32.1
34.3
-2.0
-8.0
-10.9
-9.0
0.0
-3.0
1.0
5.0
1.0
3.4
3.7
3.7
1.7
2.4
3.8
4.2
3.7
3.9
3.6
3.6
1.9
2.2
3.8
4.1
3.8
3.9
3.2
4.8
3.2
3.3
3.1
4.1
3.2
2.6
2.3
3.9
3.8
3.8
4.0
5.3
4.9
3.9
4.0
3.9
4.6
4.2
3.7
3.4
2.4
3.0
3.9
3.6
3.7
3.8
3.3
4.9
3.2
3.3
3.4
4.0
3.0
3.1
2.9
4.3
3.9
3.7
5.1
5.5
5.3
4.0
4.1
4.0
4.9
4.2
11.0
5.0
-1.9
8.0
2.0
-1.4
0.0
9.0
6.0
10.0
15.0
11.0
13.0
8.0
14.0
14.0
8.0
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
75
75
N
N
N
N
N
N
N
N
N
Y
N
N
N
N
N
N
N
N
N
N
Y
-6.0
-6.0
-9.2
-7.9
2.0
1.0
5.0
6.0
2.0
6.0
5.0
6.0
5.0
4.6
-7.8
2.0
3.0
8.0
6.0
2.1
14.3
12.5
18.2
20.0
16.0
14.6
22.0
19.9
18.0
9.1
14.0
13.0
17.0
18.0
12.0
18.0
15.0
18.0
16.0
10.0
8.0
4.9
3.2
3.5
3.0
4.2
4.0
2.6
2.3
4.2
3.9
3.7
4.3
5.5
4.7
3.8
7.0
7.0
5.0
4.0
3.0
-2.0
-5.0
-8.5
-3.1
-2.0
3.0
4.9
5.7
6.1
6.0
2.0
8.5
7.6
7.0
4.3
8.0
-3.0
-4.0
-8.0
-2.6
0.2
4.0
6.5
8.3
8.9
7.2
8.0
5.0
0.6
6.3
6.0
2.3
10.0
11.0
17.0
18.8
22.0
22.2
18.6
19.0
23.5
20.0
22.7
20.5
12.3
17.4
21.7
23.5
15.9
24.4
26.4
26.0
22.0
27.5
21.0
4.0
6.8
12.0
14.1
14.0
15.9
14.4
10.0
21.5
19.0
18.6
15.1
Y
Y
N
N
N
Y
9.0
8.8
11.0
8.8
13.0
11.2
3.8
4.6
4.3
8.1
5.7
Y
General-purpose LNA MMICs
ESD
protection
|S21|2 [dB]
Pl(1dB) [dBm]
NFmin [dB]
IP3o [dBm]
Type
Package
Vcc
(V) (mA) MHz MHz MHz MHz MHz MHz MHz MHz MHz MHz MHz MHz MHz MHz MHz MHz
Is
450 900 1800 2400 5800 450 900 2400 450 900 1800 2400 5800 450 900 1800 2400 5800
kV
HBM
MHz
MHz
BGA2001
SOT343R 2.5
4.0
4.0
10.0
15.0
7.0
18.0 14.0
18.0 14.0
19.0 14.0
19.0
1.3
1.3
1.8
1.5
1.3
1.3
1.8
-7.4
-7.4
-6.5 -4.8
10.0
-4.5
-4.5
-
-
-
-
-
BGA2002 (1) SOT343R 2.5
BGA2003
BGA2011
BGA2012
SOT343R 2.5
SOT363
SOT363
3
3
16.0
1.7
10.0
BGU7003
BGU7003W SOT886
BGU6101
BGU6102
SOT891
2.5
2.5
3
5.0
5.0
1.5
3.0
20.0
20.0
13.0 12.0
15.2
15.2
13.0 (2)
14.0 (3)
11.4
11.4
0.6
0.6
0.8
0.8
0.8
0.8
1.3 (2)
1.2 (3)
1.5
1.5
1
1
SOT1209
SOT1209
-11.0 -11.5 -6.5 (2) 0.8
-2.5
5.5
-2.0
6.0
6.5(2)
11.5 (3)
3
3
3
18.5 16.5
-5.0
-5.5 0 (3)
0.7
BGU6104
SOT1209
3
6.0
22.5 18.5
12.8 (4)
0.5
0.5 6.5 (4) 0.8
0.8
1.1 (4)
11.0 12.0
18.5 (4)
3
(1) AEC-Q101 qualified (2) Icc 3 mA (3) Icc 6 mA (4) Icc 12 mA
Bold = highly recommended product Bold red = new, highly recommended product
NXP Semiconductors RF Manual 16th edition
85
SiGe:C LNAs (for GPS and others)
@ 1.575 GHz
Supply
voltage
Insertion power
gain
Noise
figure
Input power at 1 dB gain
compression
Input third-order intercept point
f1 = 1713 MHz, f2 = 1851 MHz
Supply current
2
Vcc
Icc
|s21|
NF
PL(1dB)
IP3i
(V)
(mA)
(dB)
(dB)
(dBm)
(dBm)
Type
Package
Min Max Min Typ Max Min
Typ
18.3
Max Typ
BGU7003 SOT891 2.2
BGU7004^ SOT886 1.5
BGU7005 SOT886 1.5
BGU7007 SOT886 1.5
BGU7008^ SOT886 1.5
BGU8006 WL-CSP 1.5
BGU8007 SOT886 1.5
2.85
2.85
2.85
2.85
2.85
3.1
3
-
-
-
-
-
-
-
15
-
16
-
20
-
0.8
0.9
0.9
0.9
0.9
0.6#
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-20
-
-
-
-
-
-
-
5
5
1
1
-
-
-
-
-
-
0
-
-
-
-
-
-
-
5
5
2
2
-
-
12
12
5
4.5
4.5
4.8
4.8
4.1
4.6
16.5*
-14 -11
-14 -11
-15 -12
-15 -12
-
-
-
-
-
-
-11 -8
-11 -8
-14 -11
-14 -11
9
9
4
4
5
-
-
-
16.5*
-
-
-
-
-
-
-
18.5**
18.5**
17.5****
19.0***
-
-
-
-
-
-
-
-
-
-
-
-
5
-
-
-
-
-
-10
-
-
-
-8
-
-
-
-
-
8
2.2
-
-
-
0.75# -15 -12
-13 -10
1
4
-
2
5
-
-
* 16.5 dB without jammer / 17.5 dB with jammer
** 18.5 dB without jammer / 19.5 dB with jammer
*** 19.0 dB without jammer / 20.5 dB with jammer
**** 17.5 dB without jammer / 19 dB with jammer
^ AEC-Q101 qualified (some limitations apply)
# Evaluation board losses excluded
LNAs for set-top boxes (75 Ω)
@
Frequency
range
Gain (1)
(dB)
NF
PL (1dB)
(dBm)
OIP3
FL (2)
(dB)
RLout
(dB)
RLin
Type
Package
Mode
VCC
(V)
ICC
(MHz)
(mA)
(dB)
(dBm)
(dB)
BGU7031
BGU7032
SOT363
SOT363
40 - 1000
GP 10 dB
GP 10 dB
Bypass
GP 10 dB
GP 5 dB
Bypass
GP 10 dB
GP 10 dB
Bypass
GP 14 dB
GP 14 dB
Bypass
5
5
5
5
5
43
43
4
43
43
4
38
38
3
34
34
3
10
10
-2
10
5
-2
10
10
-2
14
14
-2
4.5
4.5
2.5
4.5
6
2.5
4
4
2.5
2.8
2.8
2.5
14
14
-
14
9
29
29
29
29
29
29
29
29
29
29
29
27
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
12
12
8
12
12
8
12
12
10
12
12
10
18
18
8
18
17
8
21
21
10
20
20
9
40 - 1000
BGU7033
SOT363
40 - 1000
5
-
BGU7041
BGU7042
BGU7044
BGU7045
SOT363
SOT363
SOT363
SOT363
40 - 1000
40 - 1000
40 - 1000
40 - 1000
3.3
3.3
3.3
3.3
3.3
3.3
12
12
-
13
13
-
LNAs for wireless infrastructures (50 Ω)
@ VCC
[typ]
(V)
@ ICC
[typ]
(mA)
frange
frange
Gass
NF
[typ]
(dB)
0.6
0.63
0.65
0.76
0.76
0.79
0.85
0.9
21
15
7.2
1
21
15
7.2
1
PL(1dB)
IP3O
[typ]
(dBm)
32
32
33
37
35.5
35
36
36
25.5
22.5
4.5
2.5
25.5
22.5
4.5
2.5
25.6
21
RLin
RLout
[typ]
(dB)
18
17.5
18
22
22
21
19.5
23
19
19
19
19
19
19
19
19
Type
Package
[min]
(MHz)
500
750
900
1500
1850
1950
2300
2700
[max]
(MHz)
750
[typ]
(dB)
23.5
21.5
21
21.5
20
19.7
18.5
17.5
3
12
18
35
3
12
18
35
3
[typ]
(dBm)
17
16.5
16.5
15.5
14.5
14.5
13.5
13
11
7.5
-7
-12.5
11
[typ]
(dB)
27.5
26
24.5
23
23
22
23
26
20
20
20
24
20
20
20
24
BGU7051
SOT650-1
3.3
65
850
1500
1750
1900
2500
2500
2800
BGU7052
BGU7053
SOT650-1
SOT650-1
3.3
3.3
80
90
BGU7060
BGU7061
SOT1301AA
SOT1301AA
5
5
200
200
185
700
800
7.5
-7
-12.5
10.7
5.4
800
950
20.6
15
9.3
0.98
6.4
1.05
23
23
23
26
35
31
16
16
16
16
15
15
12
18
35
18
BGU7062
BGU7063
SOT1301AA
SOT1301AA
5
5
1710
1920
1785
1980
-7
3.4
1
5.4
0.9
-12.8
-6.4
-12.5
190
230
35
86
NXP Semiconductors RF Manual 16th edition
General-purpose medium power amplifiers
Frequency
range
[min]
RF input
frequency
[max]
(MHz)
900
1800
900
1800
900
1800
2000
4000
2000
4000
2000
4000
940
1960
2140
2445
940
1960
2140
940
1960
2140
2445
940
@ VCC
@ ICC
Gain
PL(1dB)
IP3O
NF
Type
Package
[typ]
(V)
[typ]
(mA)
[typ]
(dB)
15.0
13.0
20.0
16.0
22.0
17.0
12.0
13.5
12.0
13.5
13.0
14.0
22.0
16.0
15.0
14.0
19.0
11.5
11.0
23.0
16.5
16.0
14.0
20.0
13.0
12.0
10.5
18.0
10.0
[typ]
(dBm)
31.0
28.0
33.0
30.0
33.0
32.0
13.0
10.0
16.5
11.5
18.5
14.0
24.0
25.5
25.5
24.5
29.0
27.5
28.0
25.0
24.5
24.5
23.5
27.5
28.5
28.0
27.5
30.0
30.0
[typ]
(dBm)
17.0
15.0
20.0
17.0
[typ]
(dB)
3.5
3.7
3.1
3.3
3
(MHz)
BGA6289
BGA6489
BGA6589
BGA7014*
BGA7017*
BGA7020*
SOT89
SOT89
SOT89
SOT89
SOT89
SOT89
4.1
5.1
4.8
5
84
78
100-3000
100-3000
100-3000
30-6000
30-6000
30-6000
21.0
20.0
26.0
20.5
29.0
23.0
33.0
26.0
37.5
38.0
38.0
37.5
41.5
43.0
42.5
38.5
38.0
37.5
36.0
41.5
42.5
42.0
41.5
43.0
44.0
81
3.3
6.2
6.0
6.4
6.3
6.5
6.2
2.9
3.7
3.7
4.0
2.6
3.8
3.9
5.2
4.6
4.8
5.4
3.1
4.5
4.6
4.7
5.0
5.0
70
5
87
5
120
BGA7024
BGA7027
BGA7124
SOT89
SOT89
SOT908
5
5
5
110
165
140
400 - 2700
400 - 2700
400 - 2700
1960
2140
2445
750
BGA7127
BGA7130
SOT908
SOT908
5
5
180
450
400 - 2700
400 - 2700
2140
VGAs for wireless infrastructures
Gp @ minimum Attenuation
@ VCC
@ ICC
frange
frange
NF
PL(1dB)
IP3O
attenuation
range
Type
Package
SOT617-3
SOT617-3
type
single
single
[typ]
(V)
5
5
5
5
5
5
5
5
5
5
5
[typ]
(mA)
115
115
115
[min]
(MHz)
400
[max]
(MHz)
700
(dB)
(dB)
[typ]
(dB)
7
6.5
6.5
7
6.5
6.5
6.5
7
[typ]
(dBm)
21
21
20.5
20
21
21
21
23
[typ]
(dBm)
38
37.5
36
34
39
37
35
35
27
43
46
18.5
18.5
17.5
16.5
30
29.5
29
28
31.5
31.5
30.5
30
31.5
31.5
31.5
30.5
29.5
24
700
1450
2100
2750
1400
1700
2200
2800
3800
250
BGA7204
BGA7210
1450
2100
700
1400
1700
2200
3400
50
115
185
185
185
185
185
245
280
26
18.5
22
8
6
6
19
17
16.5
BGA7350
BGA7351
SOT617-1
SOT617-1
dual
dual
50
250
28
2-stage variable-gain linear amplifier
@
@ 900 MHz
@ 1900 MHz
Limits
Is
Frequency
range
Vs
Is
Gain(1) DG(2)
P1dB
ACPR Gain(1) DG(2)
P1dB
ACPR
Vs
Ptot
Type
Package
(V)
3
(mA)
51
(dB)
24
(dB)
62
(dBm)
11
(dBc)
49
(dB)
23
(dB)
56
(dBm)
13
(dBc)
49
(V)
3.3
(mA)
77
(mW)
200
BGA2031/1
SOT363
800-2500
(1) Gain = GP, power gain (2) DG = gain control range
Wideband linear mixer
@
RF input
Frequency
range
IF output
Frequency
range
@ 880 MHz
@ 1900 MHz
Limits
Is
(mA)
10
Vs
(V)
3
Is
(mA)
6
Type
Package
NF Gain(1) OIP3
NF Gain(1) OIP3
Vs
(V)
4
Ptot
(mW)
40
(dB)
9
(dB) (dBm) (dB)
5
(dB) (dBm)
6
BGA2022
SOT363
800 - 2500
50 - 500
4
9
10
(1) Gain = GP, power gain (2) DG = gain control range
Bold = highly recommended product
Bold red = new, highly recommended product
* Check status in section 3.1, as this type is not yet released for mass production
NXP Semiconductors RF Manual 16th edition
87
3.4.2 Wireless infrastructure ICs
Low-noise PLL + VCO (LO generator) for wireless infrastructures
Normalized
phase noise
Phase noise
@ 1MHz
Integrated RMS Programmable
@ VCC
[typ]
(V)
@ ICC
[typ]
(mA)
fi(ref)
[min]
phase error
output power
VCO output RF output
frequency frequency
Type
Package
[max]
[max]
[max]
[typ]
(MHz)
(MHz)
(MHz)
(dBc/Hz)
(dBc/Hz)
deg
(dBm)
2200 - 2750
10 - 250 2750 - 3500 68 - 4400
3500 - 4400
-134 (2.2 GHz carrier)
-133 (3.0 GHz carrier)
-131 (4.2 GHz carrier)
0.24°
@ 2.1 GHz
BGX7300*
SOT1092-2
3.3
150
-225
-5 to +5
IQ modulators for wireless infrastructure
flo
range
@ VCC
[typ]
(V)
@ ICC
[typ]
(mA)
flo
Po
BWmod
Nflr(o) *
[typ]
PL(1dB)
[typ]
IP2O
IP3O
[typ]
SBS
CF
Type
Package
SOT616-3
SOT616-3
[typ]
(dBm)
[typ]
[typ]
[typ]
[typ]
(dBm)
(MHz)
(MHz)
(MHz)
(dBm/Hz)
(dBm)
(dBm)
(dBm)
(dBc)
165
165
173
173
178
178
184
172
172
180
180
178
182
188
750
910
-159/-158.5
-159/-158.5
-158.5/-158
-158.5/-158
-158.5/-158
-158/-158
11.5
11.5
11.5
11.5
11.5
11.5
11.5
12
12
12
12
12
71
72
69
72.5
74
62
60
71
75
71
72
75
65
65
29
29
27
27
27
26
25
28
28
27
27
27
26
25
55
49
47
49
51
60
53
63
49
55
57
63
50
57
-55
-55
-50
-48
-45
-45
-43
-51
-57
-50
-47
-45
-45
-42
1840
1960
2140
2650
3650
750
400 -
4000
BGX7100
BGX7101
5
5
-0.2
400
650
-158/-158
-159/-158.5
-159/-158.5
-158.5/-158
-158.5/-158
-158.5/-158
-158/-158
910
1840
1960
2140
2650
3650
400 -
4000
4
12
12
-158/-158
* Without modulation/with modulation
Dual mixers for wireless infrastructure
Second-order
spurious
rejection
Local
oscillator
frequency frequency
Local
oscillator
NFSSB
single-
sideband
RF input
frequency frequency
RF input
@ VCC
@ ICC
IP3i
Gconv
2RF-2LO
Type
Package
[typ]
(V)
[typ]
(mA)
[min]
[max]
(MHz)
[min]
[max]
(MHz)
[max]
(dBc)
[typ]
(dB)
[typ]
[typ]
(dB)
(MHz)
(MHz)
(dBm)
BGX7220
BGX7221
SOT1092-2
SOT1092-2
5
5
330
365
700
1400
950
2700
500
1500
1150
2500
-60
-60
10
10
26
25.5
8
8.5
Bold red = new, highly recommended product
* Check status in section 3.1, as this type is not yet released for mass production
88
NXP Semiconductors RF Manual 16th edition
3.4.3 Satellite LNB RF ICs
Vcc
I
Gconv
(dB)
NF
OIP3
(dB)
LO Freq
(GHz)
Input freq
range
Integrated Phase noise
density (degrees RMS)
Type
Package
(V)
(mA)
(dB)
TFF1014HN
TFF1015HN
TFF1017HN
TFF1018HN
10.7 - 12.75
10.7 - 12.75
10.7 - 12.75
10.7 - 12.75
5
5
5
5
52
52
52
52
36
39
42
45
7
7
7
7
13
13
13
13
9.75 / 10.6
9.75 / 10.6
9.75 / 10.6
9.75 / 10.6
1.5
1.5
1.5
1.5
SOT763-1
SOT763-1
SOT763-1
SOT763-1
3.4.4 Low-noise LO generators for VSAT and general microwave applications
Why choose NXP’s low-noise LO generators:
` Lowest total cost of ownership
` Alignment-free concept
` Easy circuit design-in
` Improved LO stability
Low-noise LO generators for VSAT applications
fIN(REF)
VCC
ICC
PLL phase noise @ N=64,
@ 100 kHz
PLL
fo(RF)
Output buffer
Input
Po
RLout(RF)
Si
Type
Package
Typ
(V)
Typ
Max
Typ
Max
(dB)
Min
(MHz)
(mA)
(dBc/Hz)
(GHz)
(dBm)
(dBm)
TFF1003HN
TFF1007HN
50 - 815
3.3
3.3
100
100
-92
12.8 - 13.05
14.62 - 15
-5
-3
-10
-10
-10
-10
SOT616
SOT616
230.46 - 234.38
-104
Low-noise LO generators for general microwave applications
PLL
fo(RF)
Typ
(GHz)
7
7.33
7.67
8.02
8.4
8.79
9.2
Output buffer
Input
PLL phase noise @
fIN(REF)
VCC
ICC
N=64
Po
Typ
(dBm)
-5
RLout(RF)
Si
Min
(dBm)
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
Frequency
band
Type
Package
Typ
(V)
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
3.3
Typ @ 100 kHz @ 10 MHz
(mA) (dBc/Hz) (dBc/Hz)
Min
(GHz)
6.84
7.16
7.49
7.84
8.21
8.59
8.99
9.00
9.41
Max
(GHz)
7.16
7.49
7.84
8.21
8.59
8.99
9.41
9.6
Max
(dB)
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
-10
(MHz)
27 - 448
28 - 468
29 - 490
31 - 513
32 - 537
34 - 562
35 - 588
36-600
37 - 616
TFF11070HN*
TFF11073HN*
TFF11077HN*
TFF11080HN* SOT616
TFF11084HN* SOT616
TFF11088HN* SOT616
TFF11092HN*
TFF11094HN*
TFF11096HN*
TFF11101HN*
TFF11105HN*
TFF11110HN*
TFF11115HN*
TFF11121HN*
TFF11126HN*
TFF11132HN*
TFF11139HN*
TFF11145HN*
TFF11152HN*
SOT616
SOT616
SOT616
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
-95
-95
-95
-95
-95
-95
-95
-95
-95
-95
-95
-95
-95
-95
-95
-95
-95
-95
-95
-131
-131
-131
-131
-131
-131
-131
-131
-131
-131
-131
-131
-131
-131
-131
-131
-131
-131
-131
C
C
C
C. X
X
X
X
X
X
X
Ku
Ku
Ku
Ku
Ku
Ku
Ka
Ka
Ka
-5
-5
-5
-5
-5
-5
-5
-5
SOT616
SOT616
SOT616
9.4
9.63
10.07
10.54
11.03
11.55
12.09
12.65
13.2
13.85
14.5
15.18
9.85
SOT616 38 - 644
9.85
10.31
10.79
11.29
11.81
12.36
12.94
13.5
14.17
14.83
15.52
-5
-5
-5
-5
-5
-5
-5
-5
SOT616
SOT616
SOT616
SOT616
40 - 674
42 - 706
44 - 738
46 - 773
10.31
10.79
11.29
11.81
12.36
12.9
13.54
14.17
14.83
SOT616 48 - 809
SOT616
SOT616
SOT616
SOT616
51 - 846
53 - 886
55 - 927
58 - 970
-5
-5
Bold = highly recommended product
* To be released on request, please consult your local NXP representative or authorized distributor
NXP Semiconductors RF Manual 16th edition
89
3.5
RF MOS transistors
3.5.1 JFETs
JFET selection guide on www.nxp.com/rffets
Easy-to-use parametric filters help you choose the right junction
field effect transistor for your design.
Why choose NXP’s JFETs:
` Reliable volume supplier
` Short lead time
` Broad portfolio
N-channel junction field-effect transistors for switching
VDS
IG
CHARACTERISTICS
IDSS
(mA)
Vgsoff
(V)
RDSON
(Ω)
max
25
40
60
8
12
18
30
50
100
30
60
100
Crs
(pF)
ton
(ns)
toff
(ns)
Type
Package
(V)
max
40
40
40
25
(mA)
max
50
50
50
50
50
50
50
50
50
50
50
min
50
20
8
80
40
10
20
5
max
min
4
max
min
max
5
5
typ
-
-
-
4
4
4
13
13
13
-
max
-
-
-
-
-
-
-
-
typ
-
-
-
6
6
6
35
35
35
-
max
25
50
100
-
BSR56
BSR57
BSR58
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
-
100
80
-
-
-
-
-
-
10
6
4
10
6
4
10
5
3
10
5
3
-
-
-
-
-
-
-
-
-
-
-
-
2
0.8
3
2
0.5
3
1
0.5
4
2
0.5
5
PMBFJ108
PMBFJ109
PMBFJ110
PMBFJ111
PMBFJ112
PMBFJ113
PMBF4391
PMBF4392
PMBF4393
15
15
15
typ.3
typ.3
typ.3
3.5
25
25
-
40
40
40
40
40
40
-
-
-
20
35
50
2
-
50
25
5
150
75
30
15
15
15
3.5
3.5
-
-
-
-
50
P-channel junction field-effect transistors for switching
VDS
IG
CHARACTERISTICS
IDSS
(mA)
Vgsoff
(V)
RDSON
(Ω)
max
85
125
250
300
Crs
(pF)
ton
(ns)
toff
(ns)
Type
Package
(V)
max
30
30
30
(mA)
max
50
50
50
min
20
7
2
1.5
max
135
70
35
20
min
5
max
min
max
typ
7
15
35
45
max
typ
15
30
35
45
max
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
SOT23
SOT23
SOT23
SOT23
10
6
4
typ.4
typ.4
typ.4
typ.4
-
-
-
-
-
-
-
-
3
1
0.8
30
50
2.25
90
NXP Semiconductors RF Manual 16th edition
N-channel junction field-effect transistors for general RF applications
VDS
IG
CHARACTERISTICS
IDSS
(mA)
Vgsoff
(V)
|Yfs|
(mS)
Crs
(pF)
Type
Package
(V)
max
(mA)
max
min
max
min
max
min
max
min
max
DC, LF, and HF amplifiers
BF545A
BF545B
BF545C
BF556A
BF556B
BF556C
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
30
30
30
30
30
30
10
10
10
10
10
10
2
6
12
3
6
11
6.5
15
25
7
13
18
0.4
0.4
0.4
0.5
0.5
0.5
7.5
7.5
7.5
7.5
7.5
7.5
3
3
3
4.5
4.5
4.5
6.5
6.5
6.5
-
-
-
0.8
0.8
0.8
0.8
0.8
0.8
-
-
-
-
-
-
Pre-amplifiers for AM tuners in car radios
BF861A
BF861B
BF861C
BF862
SOT23
SOT23
SOT23
SOT23
25
25
25
20
10
10
10
10
2
6
12
10
6.5
15
25
25
0.2
0.5
0.8
0.3
1.0
1.5
2
12
16
20
35
20
25
30
-
2.1
2.1
2.1
2.7
2.7
2.7
-
2
typ=1.9
RF stages FM portables, car radios, main radios & mixer stages
BF510(1)
BF511(1)
BF512(1)
BF513(1)
SOT23
SOT23
SOT23
SOT23
20
20
20
20
10
10
10
10
0.7
2.5
6
3
7
12
18
typ. 0.8
typ. 1.5
typ. 2.2
typ. 3
2.5
4
6
0.4
0.4
0.4
0.4
0.5
0.5
0.5
0.5
10
7
Low-level general-purpose amplifiers
BFR30
BFR31
SOT23
SOT23
25
25
5
5
4
1
10
5
< 5
< 2.5
1
1.5
4
4.5
1.5
1.5
-
-
General-purpose amplifiers
BFT46 SOT23
25
5
0.2
1.5
< 1.2
> 1
1.5
-
AM input stages UHF/VHF amplifiers
PMBFJ308
PMBFJ309
PMBFJ310
PMBFJ620
SOT23
SOT23
SOT23
SOT363
25
25
25
25
50
50
50
50
12
12
24
24
60
30
60
60
1
6.5
4
6.5
6.5
> 10
> 10
> 10
10
1.3
1.3
1.3
1.3
2.5
2.5
2.5
2.5
1
2
2
(1) Asymmetrical
3.5.2 MOSFETs
RF MOSFET selection guide on www.nxp.com/rffets Easy-to-use parametric
filters help you choose the right RF MOSFET for your design.
Why choose NXP's MOSFETs:
` Reference designs for TV tuning
` Short lead time
` Broad portfolio
` Smallest packages
` 2-in-1 FETs for tuner applications
` Reliable volume supply
` Best performance MOSFETs for TV tuning
N-channel, single MOSFETs for switching
Characteristics
Crs ton
(pF) (ns)
max
typ.0.6
VDS
ID
IDSS
(mA)
VGS(th)
(V)
RDSON
(Ω)
max
45
toff
(ns)
|S21(on)
(dB)
max
-
|
|S21(off)
(dB)
min
-
|
MODE
2
2
Type
Package
(V)
max
10
(mA)
max
50
min
-
max
-
min
max
2
min
typ
-
max
1
typ
-
max
5
BSS83
SOT143
0.1
enh.
Silicon RF Switches
BF1107
BF1108
SOT23
3
3
3
3
3
3
3
3
3
10
10
10
10
10
10
10
10
10
-
-
-
-
-
-
-
-
-
100
100
100
100
100
100
100
100
100
-
-
-
-
-
-
-
-
-
7
7
7
7
7
7
7
7
7
20
20
20
20
20
22
22
22
22
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.5
3
3
3
3
3
3
3
3
30
30
30
30
30
30
30
30
30
depl.
depl.
depl.
depl
depl
depl
depl
depl
depl
SOT143B
SOT143R
SOT343
SOT343R
SOT143B
SOT143R
SOT343
BF1108R
BF1108W
BF1108WR
BF1118
BF1118R
BF1118W
BF1118WR
SOT343R
Bold = highly recommended product
NXP Semiconductors RF Manual 16th edition
91
N-channel, dual-gate MOSFETs
Characteristics
VDS
ID
(1)
(2)
(3)
(4)
@ 200 MHz
COSS
Cig
IDSX
(mA)
VGS(th)
(V)
|Yfs|
(mS)
max
Cis
(pF)
typ
Cos
(pF)
typ
F @ 800 MHz VHF
UHF
Type
Package
(V)
max
(mA)
max min max
(dB)
typ
Two equal dual gate
MOSFETs in one
package
Two low-noise gain
amplifiers in one
package
Transistor A: fully
internal bias, transistor
B: partly internal bias
Internal switching
function
Transistor A: partly
internal bias, transistor
B: fully internal bias
min
max
min
With external bias
BF908
SOT143
12
12
12
20
20
20
20
12
12
12
40
40
40
20
40
30
30
30
30
30
3
3
3
4
-
4
4
2
2
2
27
27
27
25
-
20
20
18
18
18
-
-
-
-
-
-
-
-
-
-
-2
-2
36
36
36
10
20
15
15
21
21
22
50
50
50
-
3.1
3.1
3.1
2.1
4
1.7
1.7
1.7
1.1
2
1.5
1.5
1.5
1
1.2(1)
1(1)
1.8
1
X
X
X
X
X
X
-
X
X
X
X
X
X
-
-
-
X
X
X
X
(5)
(6)
BF908R
BF908WR
BF991
SOT143R
SOT343R
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143R
SOT343R
-2
-2.5
-1.3
-2.5
-2.5
-2.0
-2.0
-2.5
BF992
-
(7)
(8)
BF994S
BF996S
BF998
BF998R
BF998WR
-
-
-
-
2.5
2.3
2.1
2.1
2.1
1
0.8
1.05
1.05
1.05
1
1
-
Fully internal bias
BF1105
SOT143
7
7
7
30
30
30
8
8
8
16
16
16
0.3
0.3
0.3
1.2
1.2
1.2
25
25
25
-
-
-
2.2(3)
2.2(3)
2.2(3)
1.2(2)
1.2(2)
1.2(2)
1.7
1.7
1.7
X
X
X
X
X
X
BF1105R
BF1105WR
SOT143R
SOT343R
Partly internal bias
BF904A
SOT143
7
7
7
7
7
30
30
30
40
40
40
40
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
8
8
8
13
13
13
20
20
20
20
19
19
19
16
16
16
19
16
16
23
17
23
19
24
17
24
20
24
17
19
19
19
16
16
16
23
24
20
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
1
1
1
1
1
22
22
22
36
36
36
36
23
23
23
25
25
25
23
25
25
33
29
25
26
26
28
26
25
26
28
25
25
25
28
28
28
25
26
25
30
30
30
50
50
50
-
2.2
2.2
2.2
3.6
3.6
3.6
2.8(3)
2.6
2.6
2.6
1.7
1.7
1.7
2.6
1.7
1.7
2.4
1.7
2.2
1.8
2.2
2
2.1
2.1
2.2
2
2.1
2.1
2.1
1.7
1.7
1.7
2.2
2.1
2.1
1.3
1.3
1.3
2.3
2.3
2.3
1.6(2)
0.9
0.9
0.9
0.85
0.85
0.85
0.9
0.85
0.85
1.1
0.85
0.9
0.8
0.9
0.85
0.8
0.85
0.9
0.85
0.9
2
2
2
2
2
2
2
X
X
X
X
X
X
X
X
X
X
X
X
X
X
-
X
X
-
X
-
X
-
X
-
X
-
X
X
X
-
-
-
X
X
-
X
X
X
X
X
X
X
X
X
X
X
X
X
-
X
X
-
X
-
X
-
X
-
X
-
X
-
-
-
X
X
X
X
-
BF904AR
BF904AWR
BF909A
BF909AR
BF909AWR
BF1102(R)(4)
BF1201
BF1201R
BF1201WR
BF1202
BF1202R
BF1202WR
SOT143R
SOT343R
SOT143
SOT143R
SOT343R
SOT363
SOT143
SOT143R
SOT343R
SOT143
SOT143R
SOT343R
12
12
12
12
11
11
11
8
8
8
11
8
8
14
9
13
9
14
9
14
10
14
9
11
11
11
8
8
8
7
7
1
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.2
1.0
1.0
1.0
1.0
1
10
10
10
10
10
10
10
10
10
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
6
35
35
35
40
40
40
35
40
40
48
44
40
41
41
43
41
40
41
43
40
40
40
43
43
43
35
41
40
1.9
1.9
1.9
1.1
1.1
1.1
1.9
1.1
1.1
1.6
1.4
1.4
1.4
1.4
1.4
1.1
1.4
1.4
1.4
1.3
1.3
1.3
1.1
1.1
1.1
1.4
1.1
1.4
BF1203(5)
BF1204(4)
BF1206(5)
SOT363
SOT363
SOT363
(5)(7)(8)
BF1207
SOT363
SOT666
SOT666
SOT363
BF1208(5)(6)(7)
1
1
1
1
BF1208D(5)(6)(7)
BF1210(5)(6)
1
BF1211
SOT143
SOT143R
SOT343
SOT143
SOT143R
SOT343
SOT363
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1
BF1211R
BF1211WR
BF1212
BF1212R
BF1212WR
BF1214(4)
0.9
0.9
0.9
0.9
0.9
0.9
0.8
0.85
13
14
10
6
6
BF1218(5)(6)(7) SOT363
1
X
N-channel, dual-gate MOSFETs for set-top boxes
Characteristics
Cis
VDS
ID
F @
800 MHz
(dB)
typ
X-Mod @ 40 dB
gain reduction
IDSX
V(th)gs
|Yfs|
COS
Type
Package
(V)
max
6
(mA)
max
30
30
30
(mA)
max
19.5
23
19.5
23
(V)
min
0.3
0.3
0.3
0.3
0.3
(mS)
typ
27
27
27
(pF)
typ
2.5
2.5
2.5
2.5
2.5
(pF)
typ
0.8
0.8
0.8
0.8
0.8
(dB)
typ
107
107
107
107
107
max
1
1
1
1
1
1.9
1.9
1.9
1.9
BF1215 (1)(2)(3)
SOT363
BF1216(1)
BF1217
SOT363
SOT343
6
30
30
27
27
23
1.9
(1) Two low-noise gain amplifiers in one package
(2) Transistor A: fully internal bias, transistor B: partly internal bias
(3) Internal switching function
Bold = highly recommended product
92
NXP Semiconductors RF Manual 16th edition
3.6
RF modules
CATV module selection guide on www.nxp.com/catv
Easy-to-use parametric filters help you choose the right
CATV module for your design.
Why choose NXP’s RF modules:
` Excellent linearity, stability, and reliability
` Rugged construction
C-types (China)
` CATV push-pulls, section 3.6.2: BGY588C, BGE788C,
CGY888C
` Extremely low noise
` CATV power doublers, section 3.6.3: BGD712C, CGD982HCi,
CGD985HCi, CGD987HCi
` High power gain
` Low total cost of ownership
` CATV optical receivers, section 3.6.4: BGO807C, BGO807CE
CATV types for Chinese (C-types) and 1 GHz GaAs HFET
line-ups
1 GHz GaAs HFET high-end hybrids
` CATV push-pulls, section 3.6.2 : CGY1032, CGY1041,
CGY1043, CGY1047, CGY1049
The C-types are specially designed for the Chinese market,
customized for two major governmental projects. The GaAs
HFET family includes a complete 1 GHz line-up for high-end
applications around the world.
` CATV power doublers, section 3.6.3: CGD1040Hi,
CGD1042Hi, CGD1044Hi, CGD1046Hi, CGD1042H,
CGD1044H
3.6.1 CATV push-pulls
Itot
(mA)
RLIN/RLOUT
(dB)
Frequency range
(MHz) (1)
Gain
(dB)
Slope
(dB)
FL
(dB) (2)
CTB
(dB) (3)
Xmod
(dB) (3)
CSO
(dB) (3)
@ Vo
(dBmV)
NF @ fmax
(dB)
Type
@ Ch
BGY588C
BGY785A
BGE788C
BGY787
BGE787B
BGE885
BGX885N
BGY885A
BGY887
CGY888C
BGY835C
BGY887B
BGY888
40-550
33.5 - 35.5 0.2 - 1.7
18 - 19 0 - 2
33.2 - 35.2 0.3 - 2.3
21 - 22 0 - 1.5
28.5 - 29.5 0.2 - 2.2
16.5 - 17.5 0.2 - 1.2
16.5 - 17.5 0.2 - 1.4
0.5
0.1
16 / 16
20 / 20
16 / 16
20 / 20
20 / 20
14 / 14
20 / 20
20 / 20
20 / 20
20 / 20
20 / 20
20 / 20
20 / 20
-57
-54.5
-49
-54.5
-48
-62
-62
-52
-57.5
-56
77
44
44
44
44
44
8
6
8
5
6.5
8
8
6
5
4
345
225
325
220
340
240
240
225
220
280
340
340
325
-57.5
110
110
110
110
0.6
0.2
0.45
0.5
0.3
0.2
0.2
0.25
0.5
0.5
0.2
40-750
-54
-52
18 - 19
21 - 22
34.5 - 36.5
0 - 2
0.2 - 2
1.5
-65
-64.5
-65
-60
-60
-65
-64.5
-72
-67
-67.5
-63
-55
-60
49
49
112
49
49
49
44
44
44
44
44
44
40-870
33.5 - 34.5 0.5 - 2.5
28.5 - 29.5 0.5 - 2.5
33.5 - 34.5 0.5 - 2.5
7
6.5
5.5
-60
-63
-63.5
-64
3.6.2 CATV push-pulls 1 GHz
Itot
(mA)
RLIN/RLOUT
(dB)
Frequency
Gain
(dB)
Slope
(dB)
FL
CTB
Xmod
CSO
@ Vo NF @ fmax
Type
@ Ch
range (MHz)(1)
(dB) (1)
(dB) (3) (dB) (3) (dB) (3)
(dBmV)
(dB)
4.3
4.2
4.5
4.5
4.4
7.5
CGY1041
CGY1043
CGY1047
CGY1049
CGY1032
BGY1085A
21 - 22.5 1.2 - 2.7
23 - 24.5 1.2 - 2.7
27 - 28.5 1.5 - 2.5
0.9
0.9
0.8
20 / 18
20 / 18
20 / 18
20 / 18
20 / 18
20 / 20
-62
-62
-64
-62
-62
-53
-58
-58
-60
-58
-58
-54
-64
-64
-66
-64
-64
-56
79 NTSC channels + 75 digital channels
79 NTSC channels + 75 digital channels
79 NTSC channels + 75 digital channels
79 NTSC channels + 75 digital channels
79 NTSC channels + 75 digital channels
150
44
265
265
250
265
265
240
44
44
40 - 1003
29 - 31 0.85 - 2.35 0.85
32 - 34 1.05 - 2.55 0.85
44
44
18 - 19
0 - 2
0.3
40
Bold = highly recommended product
NXP Semiconductors RF Manual 16th edition
93
3.6.3 CATV power doublers
Itot
(mA)
RLIN/RLOUT
(dB)
Frequency
range (MHz) (1)
Gain
(dB)
Slope
(dB)
FL
(dB) (1)
Xmod
(dB) (3)
@ Vo
(dBmV)
NF @ fmax
(dB)
Type
CTB (dB)(3)
CSO (dB)(3)
@ Ch
BGD712
BGD712C
BGD714
BGD812
BGD814
BGD816L
CGD942C
CGD944C
CGD1040HI
CGD1042HI
CGD1044HI
CGD1046HI
CGD1042H
CGD1044H
CGD982HCI
CGD985HCI
CGD987HCI
18.2 - 18.8
18.2 - 18.8
20 - 20.6
18.2 - 18.8
19.7 - 20.3
21.2 - 21.8
22 - 24
0.5 - 1.5
0.5 - 1.5
0.5 - 1.5
0.4 - 1.4
0.5 - 1.5
0.5 - 1.5
1 - 2
0.35
0.35
0.35
0.5
0.5
0.5
0.5
0.5
1
1
1
1
0.5
0.5
1
1
1
17 / 17
17 / 17
23 / 23
25 / 23
25 / 24
22 / 25
20 / 20
20 / 20
20 / 20
20 / 20
20 / 20
20 / 20
20 / 21
20 / 21
20 / 20
20 / 20
20 / 20
-62
-62
-61
-57
-56
-55
-66
-66
-70
-70
-70
-75
-75
-75
-66
-66
-66
-63
-63
-63
-62
-58
-57
-56
-66
-66
-76
-75
-75
-70
-76
-76
-69
-69
-66
112
112
112
132
132
132
98
98
79
79
79
79
79
79
98
98
98
44
44
44
44
44
44
48
48
58.4
58.4
58.4
56.4
59
59
48
48
48
7
7
7
395
410
395
395
395
360
450
450
440
440
440
450
450
450
440
440
440
40 - 750
40 - 870
-62
-62
-61
-58
-66
-66
-66
-65
-64
-68
-67
-67
-68
-68
-68
7.5
7.5
7.5
3.5
3.5
5.5
5.5
5
5
5
5
5.5
5
24 - 26
1 - 2
19.5 - 22
22 - 23.5
23.5 - 25.5
26.5 - 28
22 - 24
24 - 26
22 - 24
23.5 - 25.5
26 - 28
0.5 - 2
0.5 - 2
0.5 - 2
0.7 - 2.2
1.5
40 - 1003
1
0.5 - 2
0.5 - 2
0.7 - 2
5
3.6.4 CATV optical receivers
RLOUT
(dB)
@ fmeasured
(MHz)
@ Pi(opt)
(mW)
Frequency
S
Slope
(dB)
FL
(dB) (1)
IMD3
(dB) (3)
IMD2
(dB) (3)
NF @ fmax
(dB)
Itot
(mA)
Connectors
Type
range (MHz)(1) (V/W) (4)
BGO807C
BGO807CE
750
40 - 870
0 - 2
0 - 2
1
1
11
11
-71
-69
-55
-53
854.5
854.5
1
1
8.5
8.5
205
205
FC and SC
FC and SC
750
3.6.5 CATV reverse hybrids
Itot
(mA)
RLIN/RLOUT
(dB)
Frequency
range (MHz)
Gain
(dB)
Slope
(dB)
FL
(dB) (1)
CTB
(dB)(3)
Xmod
(dB)(3)
CSO
(dB)(3)
@ Vo
(dBmV)
NF @ fmax
(dB)
Type
@ Ch
(1)
BGY68
BGY66B
BGY67
BGY67A
BGR269
5 - 75
5 - 120
29.2 - 30.8
24.5 - 25.5
21.5 - 22.5
23.5 - 24.5
34.5 - 35.5
-0.2 - 0.5
-0.2 - 0.5
-0.2 - 0.5
-0.2 - 0.5
-0.2 - 0.6
0.2
0.2
0.2
0.2
0.5
20 / 20
20 / 20
20 / 20
20 / 20
20 / 20
-68
-66
-67
-67
-57
-60
-54
-60
-59
-50
4
50
48
50
50
50
3.5
5
5.5
5.5
5.5
135
135
215
215
160
14
22
22
28
5 - 200
-66
Bold = highly recommended product
(1) Frequency range: minimum and maximum frequency in MHz at which data are characterized (@ Ch / @ Vo)
(2) FL is flatness of frequency response
(3) The number of channels and the output voltage at which CTB, Xmod, CSO, IMD2, and IMD3 are characterized, are @ fmax
(4) S is minimum responsivity of optical receivers
94
NXP Semiconductors RF Manual 16th edition
3.7
RF power transistors
NEW: RF power transistor selection guide on www.nxp.com/rfpower
Easy-to-use parametric filters help you choose the right RF
power transistor for your design.
3.7.1 RF power transistors for base stations
Device naming conventions RF power transistors for base stations
B
L
F
6
G
22
L
S
-45
P
R
B
N
G
V
video bandwidth enhanced
gullwing-shaped leads
specialty
option: current sense lead
enhanced ruggedness
push-pull device
P1dB power
option: earless package
option: low thermal resistivity
operating frequency (in 100MHz; maximum)
G: standard LDMOS
LDMOS technology generation
F: LDMOS transistor in ceramic package
C: LDMOS transistor in air cavity plastic (ACP) package
D: fully integrated Doherty amplifier
M: MMIC module
L: high frequency power transistor
B: semiconductor die made of Si
Why choose NXP‘s RF power transistors for base stations:
` Leading technology (generations 6, 7, and 8 of LDMOS)
` Highest efficiency
` Best ruggedness
` Advanced Doherty amplifier designs
` Very broad band (video bandwidth enhanced) devices
` Industry’s first 3.8 GHz Doherty
` Industry's first three-way, 900 MHz Doherty
` Industry's first 50 V, 600 W, single-package Doherty
NXP offers complete line-ups of RF power transistors operating from 800 MHz right up to 3.8 GHz for base stations,
covering all cellular technologies [MC-GSM/EDGE, TDMA, (TD-S)CDMA, W-CDMA/UMTS, LTE] and WiMAX infrastructures.
3.7.1.1
0.7 - 1.0 GHz line-up
Test signal performance
fmin
fmax
P1dB
(W)
VDS
(V)
PL
(W)
BO
(dB)
Gp
(dB)
ηD
(%)
Type
Product
Matching
Test signal
Package
(MHz) (MHz)
BLP7G22-10*
BLM6G10-30(G)
Driver
MMIC
700
920
700
700
700
850
920
920
688
700
700
700
700
700
700
700
700
900
2200
960
1000
1000
900
960
960
960
1000
1000
1000
1000
1000
1000
1000
1000
1000
1000
10
30
40
45
-
I/O
I
28
28
28
28
28
28
30
30
28
28
50
32
30
28
28
28
28
28
2
2
2.5
1
7.0
11.8
12.0
16.5
6.0
7.0
6.6
6.2
7.0
7.1
5.5
7.0
6.6
6.5
8.1
6.8
7.0
26
11.5
15
8
28
30
29
30.5
28.5
28
30
27
28
28
26.5
28
27
17
29
23
23
19
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
SOT1179
SOT822
SOT1112A
SOT608
SOT1224
SOT539
SOT502
SOT502
SOT502
SOT502
SOT467
SOT502
SOT1244
SOT1244C
SOT539
SOT1244C
SOT1242C
SOT1224
BLF6G10L-40BRN
BLF6G10(S)-45
BLP7G07S-140P(G)*
BLF8G10L(S)-300P*
BLF8G10L(S)-160
Driver/final
I
140
300
160
250
200
135
160
160
160
200
260
270
400
140
O
I/O
I/O
I/O
I
I
-
I
I/O
I/O
I
I/O
I/O
O
35
60
35
60
40
26.5
45
32
35
45
40
56
79
35
19
19.7
19.5
20
21
20
22.5
30
19.3
22
19.6
19.4
19
BLF7G10L(S)-250
BLF6G10(LS)-200RN
BLF6G10(LS)-135RN
BLF6H10L(S)-160
BLF6G10(LS)-160RN
BLF8G10L(S)-160V*
BLF8G10LS-200GV*
BLF6G10L(S)-260PRN
BLF8G10LS-270GV*
BLF8G10LS-400PGV*
BLP7G09S-140P(G)*
Final
6.0
28
Bold red = new, highly recommended product
* Check status in section 3.1, as this type is not yet released for mass production
NXP Semiconductors RF Manual 16th edition
95
3.7.1.2
1.4 - 1.7 GHz line-up
Test signal performance
fmin
fmax
P1dB
(W)
VDS
(V)
PL
(W)
BO
(dB)
Gp
(dB)
ηD
(%)
Type
Product
Matching
Test signal
Package
(MHz) (MHz)
BLF6G21-10G
BLP7G22-10
BLF6G15L-40BRN
BLF6G15L(S)-40RN*
BLF7G15LS-200
BLF6G15L-250PBRN
BLF7G15LS-300P
1
700
1450
1450
1450
1450
1450
2200
2200
1550
1550
1550
1550
1550
10
10
40
-
-
28
28
28
28
28
28
28
0.7
2
2.5
2.5
50
60
85
11.5
7.0
12.0
12.0
6.0
6.2
5.5
15
26
13
13
29
33
31
18.5
17
22
21.5
19.5
18.5
18
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
SOT538A
SOT1179
SOT1112A
SOT1135
SOT502B
SOT1110A
SOT539B
Driver
I/O
I/O
I/O
I/O
I/O
Driver/final
40
200
250
300
Final
3.7.1.3
1.8 - 2.0 GHz line-up
Test signal performance
fmin
fmax
P1dB
(W)
VDS
(V)
PL
(W)
BO
(dB)
Gp
(dB)
ηD
(%)
Type
Product
Matching
Test signal
Package
(MHz) (MHz)
BLF6G21-10G
BLP7G22-10
BLF6G20(S)-45
1
700
2200
2200
2000
2170
2000
2000
2000
2000
2000
2000
2000
1900
2000
2000
1990
1880
10
10
45
90
75
110
140
140
180
200
230
260
270
270
200
250
-
-
28
28
28
28
28
28
28
28
30
28
28
28
28
28
28
28
0.7
2
2.5
40
29.5
25
35.5
60
40
55
65
50
50
56
55
70
11.5
7.0
15
26
14
18.5
17
19.2
19.5
19
2-c WCDMA
2-c WCDMA
2-c WCDMA
GSM EDGE
GSM EDGE
2-c WCDMA
2-c WCDMA
GSM EDGE
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
SOT538A
SOT1179
SOT608
SOT1121
SOT502
Driver
Driver/final
1800
1427
1800
1800
1800
1800
1800
1800
1800
1800
1800
1800
1805
1805
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
12.6
3.5
4.1
6.4
6.0
3.7
6.5
5.6
5.5
7.2
BLF7G20L(S)-90P
BLF6G20(LS)-75
BLF6G20(LS)-110
BLF6G20LS-140
BLF7G20LS-140P
BLF6G20(LS)-180RN
BLF8G20L(S)-200V*
BLF6G20S-230PRN
BLF7G20LS-260A*
BLF8G20LS-270GV*
41
37.5
32
30
41
27
33
32
44
25
28
33
35
19
SOT502
16.5
17.5
17.2
17.5
17.5
15.5
17.8
19.4
18
SOT502B
SOT1121B
SOT502
SOT1120
SOT539B
SOT539B
SOT1244C
SOT1242C
SOT502
Final
7.3
BLF8G20LS-270PGV*
BLF7G20L(S)-200
BLF7G20L(S)-250P
6.8
5.6
5.5
18
SOT539
Integrated
Doherty
BLD6G21L(S)-50
2010
2025
50
O
28
8
8.0
43
14.5
TD-SCDMA
SOT1130
3.7.1.4
2.0 - 2.2 GHz line-up
Test signal performance
fmin
fmax
P1dB
(W)
VDS
(V)
PL
(W)
BO
(dB)
Gp
(dB)
ηD
(%)
Type
Product
Matching
Test signal
Package
(MHz) (MHz)
BLF6G21-10G
BLP7G22-10*
BLF3G21-6
BLF3G21-30
BLF6G22L(S)-40P
BLF6G22L-40BN
BLF6G22(S)-45
BLM6G22-30(G)
BLM7G22S-60PB(G)*
BLF7G21LS-160
1
700
2200
2200
2200
2200
2170
2200
2200
2200
2200
2050
2050
2200
2200
2200
2200
2200
2200
2200
2200
2200
2200
2200
2200
2170
2170
10
10
6
30
40
40
45
30
60
-
-
-
-
28
28
26
26
28
28
28
28
28
28
28
28
28
28
28
28
28
32
32
30
28
28
28
28
28
0.7
2
6
30
13.5
2.5
2.5
2
3.2
45
45
17
25
20
30
30
43
55
50
40
48
50
50
55
70
11.5
7.0
15
26
39
35
30
16
13
9
10
34
34
30.5
29
28.5
28.5
32
30
30
27.5
25
18.5
17
15.5
13.5
19
2-c WCDMA
2-c WCDMA
CW
SOT538A
SOT1179
SOT538A
SOT467C
SOT1121
SOT1112A
SOT608
Driver
1800
1800
2110
2000
2000
2100
2000
1800
1800
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2000
2110
2110
0.0
0.0
4.7
12.0
12.6
11.8
12.7
5.5
5.5
6.4
6.0
7.0
6.4
6.4
5.7
4.6
5.6
6.5
6.2
7.3
CW
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
Driver/final
MMIC
19
18.5
29.5
30
18
18
18.7
18.5
19.1
17
18.5
18
18.5
17.5
16
20.2
17.8
18
SOT822
SOT1212
SOT1121B
SOT1121
SOT502B
SOT502B
SOT1121B
SOT502B
SOT502
160
160
75
BLF7G21L(S)-160P
BLF6G22LS-75
BLF6G22LS-100
BLF7G22L(S)-100P
BLF6G22LS-130
BLF7G22L(S)-130
BLF7G22L(S)-160
BLF8G22LS-160BV*
BLF6G22(LS)-180PN
BLF6G22(LS)-180RN
BLF8G22LS-200GV*
BLF8G22LS-270GV*
BLF8G22LS-400PGV*
BLF7G22L(S)-200
BLF7G22L(S)-250P
100
100
130
130
160
160
180
180
200
270
400
200
250
SOT502B
SOT1120B
SOT539
Final
SOT502
28
26
26
31
SOT1244C
SOT1244C
SOT1242C
SOT502
9.0
5.6
5.5
18.5
18.5
31
SOT539
Integrated
Doherty
BLD6G22L(S)-50
2110
2170
50
I/O
28
8
8.0
40
14
TD-SCDMA
SOT1130
3.7.1.5
2.3 - 2.4 GHz line-up
Test signal performance
fmin
fmax
P1dB
(W)
VDS
(V)
PL
(W)
BO
(dB)
Gp
(dB)
ηD
(%)
Type
Product
Matching
Test signal
Package
(MHz) (MHz)
BLF6G27-10(G)
Driver
2300
2300
2300
2300
2300
2700
2400
2400
2400
2400
10
I
28
28
28
28
28
2
7.0
7.0
6.7
7.3
5.2
20
27
26.5
27.5
30
19
18
N-CDMA/IS95
N-CDMA/IS95
SOT975
SOT502
SOT502
SOT539
SOT539
BLF7G24L(S)-100
BLF7G24L(S)-140
BLF7G24L(S)-160P*
BLF8G24L(S)-200P*
100
140
160
200
I/O
I/O
I/O
I/O
20
30
30
60
18.5 N-CDMA/IS95
18.5 N-CDMA/IS95
16.5
Final
1-c WCDMA
Bold red = new, highly recommended product
* Check status in section 3.1, as this type is not yet released for mass production
96
NXP Semiconductors RF Manual 16th edition
3.7.1.6
2.5 - 2.7 GHz line-up
Test signal performance
fmin
fmax
P1dB
(W)
VDS
(V)
PL
(W)
BO
(dB)
Gp
(dB)
ηD
(%)
Type
Product
Matching
Test signal
Package
(MHz) (MHz)
BLF6G27-10(G)
BLF6G27L(S)-40P
BLF6G27(S)-45
Driver
2300
2500
2500
2500
2300
2500
2500
2500
2500
2500
2500
2500
2500
2500
2500
2500
2500
2600
2600
2700
2700
2700
2700
2700
2700
2700
2700
2700
2700
2700
2700
2700
2700
2700
2700
2700
2700
2700
10
40
I
28
28
28
28
28
28
28
28
28
28
32
28
28
28
28
28
28
32
32
2
20
7
3
12
9
16
16
14
25
20
30
50
50
30
32
50
45
65
7.0
3.0
8.1
12.2
8.0
9.2
7.5
7.5
8.5
6.0
8.3
6.7
4.5
4.5
7.0
8.0
7.5
4.9
4.9
20
37
19
17.5
18
16.5
17
17
N-CDMA/IS95
1-c WCDMA
SOT975
SOT1121
SOT608
SOT1112
SOT1121
SOT502
SOT1121
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
45
24
N-CDMA/IS95
2-c WCDMA
Driver/final
BLF6G27L(S)-50BN
BLF7G27L(S)-75P
BLF6G27(LS)-75
BLF7G27L(S)-90P
BLF7G27LS-90PG*
BLF6G27(LS)-100
BLF7G27L(S)-100
BLF6G27(LS)-135
BLF7G27L(S)-140
BLF8G27LS-140
BLF8G27LS-140G*
BLF7G27L(S)-150P
BLF8G27LS-200PGV*
BLF8G27LS-280PGV*
BLF8G27LS-140V*
BLF7G27L-200PB
50
75
75
90
90
100
100
135
140
140
140
150
200
280
140
200
14.5
26
23
29
27.5
23
28
22.5
22
31
31
26
N-CDMA/IS95
N-CDMA/IS95
18.5 N-CDMA/IS95
17.5 N-CDMA/IS95 SOT1121C
17
18
16
1-c WCDMA
N-CDMA/IS95
N-CDMA/IS95
SOT502
SOT502
SOT502
SOT502
SOT502B
SOT502E
SOT539
SOT1242C
SOT1242C
SOT1244B
SOT1110A
16.5 N-CDMA/IS95
Final
18
18
2-c WCDMA
2-c WCDMA
16.5 N-CDMA/IS95
23
21
30
17
2-c WCDMA
2-c WCDMA
2-c WCDMA
2-c WCDMA
16.4
16.5
16.5
29
3.7.1.7
3.5 - 3.8 GHz line-up
Test signal performance
fmin
fmax
P1dB
(W)
VDS
(V)
PL
(W)
BO
(dB)
Gp
(dB)
ηD
(%)
Type
Product
Matching
Test signal
Package
(MHz) (MHz)
BLF6G38-10(G)
BLF6G38(S)-25
BLF6G38(LS)-50
BLF6G38(LS)-100
3400
3400
Driver/final 3400
Final 3400
3600
3800
3800
3600
10
25
I/O
I/O
I/O
I/O
28
28
28
28
2
4.5
9
7.0
7.4
7.4
7.3
20
24
14
15
14
13
N-CDMA/IS95
N-CDMA/IS95
N-CDMA/IS95
N-CDMA/IS95
SOT975
SOT608
SOT502
SOT502
Driver
50
23
100
18.5
21.5
3.7.1.8
Power LDMOS Doherty designs
PPEAK POUT-AVG VDS
Gain Drain efficiency
Freq band (MHz)
Type
Main transistor
Peak transistor
(dBm)
(dBm)
(V)
(dB)
(%)
728-821 MHz
790-821
790-821
55.5
57.2
58
47
49.5
50
28
32
32
19
20
20.5
42
42
47
SYM
SYM
SYM
1/2 BLF6G10L(S)-260PRN
BLF6G10LS-200RN
BLF6G10LS-200RN
1/2 BLF6G10L(S)-260PRN
BLF6G10LS-200RN
BLF6G10LS-200RN
728-768
869-960 MHz
920-960
869-894
869-894
920-960
920-960
920-960
920-960
920-960
920-960
920-960
869-894
920-960
46
52
38
44
44.5
47.5
47.1
48
50
49.2
49
28
28
28
28
28
28
30
28
30
28
28
30
30
28
28
32
28
32
28
24
20
15
17.3
20.5
18.5
18.8
15.8
16.1
15
51
48
50
48
44
40
44.5
48
46.7
48
49.5
50
48.8
40
50.1
46
49.1
47
52
SYM
SYM
3-WAY
SYM
SYM
SYM
BLF6G21-10G
BLF6G10S-45
BLF6G10S-45
BLF6G21-10G
BLF6G10S-45
2x BLF6G10S-45
52.7
54.7
55.1
56.2
56.6
57
57.1
57.1
57.2
57.3
57.5
57.7
57.9
58
BLF6G10LS-135RN
1/2 BLF6G10L(S)-260PRN
BLF6G10LS-135RN
BLF6G10LS-200RN
BLF7G10LS-250
BLF8G10LS-160
BLF8G10LS-160
BLF7G10LS-250
BLF8G10LS-160
BLF6G10LS-200RN
BLF6G10L(S)-260PRN
BLF6G10LS-260PRN
BLF6G10-200RN
BLF6G10LS-200RN
BLF6G10L(S)-260PRN
BLF7G10LS-250
BLF6G10LS-135RN
1/2 BLF6G10L(S)-260PRN
BLF6G10LS-135RN
BLF6G10LS-200RN
BLF7G10LS-250
SYM
SYM
ASYM
3-WAY
SYM
ASYM
ASYM
BLF7G10LS-250
2x BLF8G10LS-160
BLF7G10LS-250
BLF7G10LS-250
BLF7G10LS-250
49
49.3
49.3
50.8
49.7
52
50
52
50.9
50.4
16.5
16
18
869-894
925-960
869-894
869-894
869-894
925-960
869-894
20.5
18.2
20.5
16.1
22
SYM / MPPM
SYM / MMPP
SYM
ASYM
SYM / MMPP
3-WAY
BLF6G10L(S)-260PRN
BLF6G10LS-260PRN
BLF6G10-200RN
2x BLF7G10LS-250
BLF6G10L(S)-260PRN
2x BLF7G10LS-250
58.9
58.9
59.2
16
1476-1555 MHz
1526-1555
1476-1511
1476-1511
56.6
58.1
58.6
48.6
49.6
50.6
28
28
32
18.4
16
16.5
42
42
42
SYM
ASYM
SYM
BLF7G15LS-200
BLF7G15LS-200
BLF6G15LS-250PBRN
BLF7G15LS-200
BLF7G15LS-300P
BLF6G15LS-250PBRN
1805-1880 MHz (DCS)
1805-1880
1805-1880
1805-1880
1845-1880
1805-1880
1805-1880
1805-1880
1805-1880
1805-1880
1805-1880
48
50
52.5
52.6
54
40
42.8
44.5
45
47
49
47.5
47
48.1
49
28
28
28
28
28
28
31
28
30
28
15.4
15.8
16
14.5
16
15.5
16.3
16
15.2
32
42.4
48
44
46.5
49
47
49
41
48
45.5
SYM
SYM
SYM
SYM
SYM
SYM
ASYM
SYM
ASYM
ASYM
1/2 BLF6G22LS-40P
1/2 BLF7G20LS-90P
1/2 BLF7G21LS-160P
1/2 BLF7G21LS-160P
BLF6G20LS-110
BLF7G21LS-160P
BLF7G20LS-90P
1/2 BLF7G20L(S)-250P
BLF7G20LS-90P
1/2 BLF6G22LS-40P
1/2 BLF7G20LS-90P
1/2 BLF7G21LS-160P
1/2 BLF7G21LS-160P
BLF6G20LS-110
BLF7G21LS-160P
BLF7G21LS-160P
1/2 BLF7G20L(S)-250P
BLF7G20LS-200
55
55.4
55.5
56.1
56.5
BLF6G21-10G
BLF7G20LS-200
Bold red = new, highly recommended product
* Check status in section 3.1, as this type is not yet released for mass production
NXP Semiconductors RF Manual 16th edition
97
PPEAK POUT-AVG VDS
Gain Drain efficiency
Freq band (MHz)
Type
Main transistor
Peak transistor
(dBm)
(dBm)
(V)
28
30
28
30
32
28
28
30
(dB)
14.3
16
(%)
45.1
42
1805-1880
1805-1880
1805-1880
1805-1880
1805-1880
1805-1880
1805-1880
1805-1880
57.1
49
3-WAY
SYM
ASYM
BLF7G21LS-160P
BLF7G20LS-200
BLF7G20LS-200
BLF7G20LS-250P
BLF6G20-230PRN
BLF7G20LS-250P
BLF7G20LS-200
BLF7G20LS-200
2x BLF7G21LS-160P
BLF7G20LS-200
57.5
57.5
57.8
57.9
49.5
50.5
50.4
50
14
48
BLF7G20LS-250P
BLF7G20LS-250P
BLF6G20-230PRN
BLF7G20LS-250P
2x BLF7G20LS-200
2x BLF7G20LS-200
16
15.5
16
41.5
37
42
SYM
SYM / MMPP
SYM MPPM
3-WAY
58.2
58.6
58.7
50
51
51
16
15.8
47.6
47
3-WAY
1930-1990 MHz (PCS)
1930-1990
1930-1990
1930-1990
1930-1990
1930-1990
1930-1990
1930-1990
1930-1990
1930-1990
1930-1990
1930-1990
1930-1990
53
45
47.4
47.2
47.5
49
48
48
49
49.5
50
28
28
28
28
28
31
28
30
28
28
28
30
16.5
16.7
16
14.5
14.5
15.3
14.8
17.2
15.1
16
40
48.2
40
46
48
38
45
41
46
SYM
SYM
SYM
ASYM
ASYM
SYM
ASYM
SYM
ASYM
SYM
ASYM
3-WAY
BLF6G20-75
BLF6G20LS-110
1/2 BLF7G20LS-250P
BLF7G20LS-90P
BLF7G21LS-160P
BLF6G20LS-140
BLF7G20LS-140P
BLF7G20LS-200
BLF7G21LS-160P
BLF7G20LS-250P
BLF6G21-10G
BLF6G20-75
BLF6G20LS-110
1/2 BLF7G20LS-250P
BLF7G20LS-200
BLF7G20LS-200
BLF6G20LS-140
BLF7G20LS-200
BLF7G20LS-200
2x BLF7G21LS-160P
BLF7G20LS-250P
BLF7G20LS-200
2x BLF7G20LS-200
54.3
55.2
55.5
55.7
56
56
57
57
58.2
56.8
58.5
40
42.3
43
49.1
50.5
32
15.7
BLF7G20LS-200
1805-2025 MHz (TD-SCDMA)
2010-2025
1880-2025
2010-2025
1805-2050
2010-2025
1880-1920
47
50
50
52
52.2
52.5
39
42
42
44.5
44
44.5
28
28
28
28
28
28
14.4
17
17.2
15.2
15.6
16
41
46
47.2
41.5
43
SYM
SYM
SYM
SYM
SYM
SYM
BLD6G21L(S)-50
1/2 BLF7G20L(S)-90P
1/2 BLF7G20L(S)-90P
1/2 BLF7G21LS-160P
1/2 BLF7G21LS-160P
1/2 BLF7G21LS-160P
BLD6G21L(S)-50
1/2 BLF7G20L(S)-90P
1/2 BLF7G20L(S)-90P
1/2 BLF7G21LS-160P
1/2 BLF7G21LS-160P
1/2 BLF7G21LS-160P
44
2110-2170 MHz (UMTS / LTE)
2110-2170
2110-2170
2110-2170
2110-2170
2110-2170
2110-2170
2110-2170
2110-2170
2110-2170
2110-2170
2110-2170
2110-2170
2110-2170
2110-2170
2110-2170
47
39
40
40.5
46.5
47
47
47
46.4
49
47.9
48
28
28
28
28
28
28
28
28
28
28
28
28
28
28
32
13
17
17.2
16.5
17
17
15.5
15
14.5
17.3
15
16.2
14.2
16
38
44
46
43
43
43
38
43
47
42
48
41
46
47
40
SYM
SYM
SYM
SYM
SYM
BLD6G22L(S)-50
1/2 BLF6G22LS-40P
1/2 BLF6G22L-40P
BLF6G22LS-100
BLF7G22L(S)-130
1/2 BLF7G22LS-250P
BLF6G22L(S)-130
BLF7G22L(S)-130
BLF7G22LS-130
BLF7G22LS-160
BLF7G22L(S)-130
BLF7G22L(S)-200
BLF7G22LS-160
BLF7G22LS-160
BLF7G22LS-250P
BLD6G22L(S)-50
1/2 BLF6G22LS-40P
1/2 BLF6G22L-40P
BLF6G22LS-100
BLF7G22L(S)-130
1/2 BLF7G22LS-250P
BLF6G22L(S)-130
BLF7G22L(S)-200
BLF7G22LS-200
48.3
48.5
54.7
54.9
55
SYM
SYM
55
55.5
55.7
55.9
56
56.5
56.5
57.2
58
ASYM
ASYM
SYM
3-WAY
SYM
ASYM
3-WAY
SYM
BLF7G22LS-160
2x BLF7G22L(S)-130
BLF7G22L(S)-200
BLF7G22LS-200
2x BLF7G22L(S)-160
BLF7G22LS-250P
48.5
49
49.2
50
17.5
2300-2400 MHz (WiBRO / LTE)
2300-2400
2300-2400
2300-2400
2300-2400
2300-2400
2300-2400
49.5
53
54.1
55
56.2
56.8
42
45
47
47.5
48.5
48.5
28
28
28
28
30
30
14.6
15
15.5
15.2
15
44
42.3
45
44
40
SYM
SYM
SYM
ASYM
SYM
3-WAY
1/2 BLF7G27L(S)-75P
1/2 BLF7G24LS-160P
BLF7G24LS-100
BLF7G24LS-100
BLF7G24LS-140
1/2 BLF7G27L(S)-75P
1/2 BLF7G24LS-160P
BLF7G24LS-100
BLF7G24LS-140
BLF7G24LS-140
15
42
BLF7G24LS-100
2x BLF7G24LS-100
2500-2700 MHz (WiMAX / LTE)
2620-2690
2580-2620
2620-2690
2570-2620
2500-2700
2500-2700
2500-2600
2600-2700
2600-2700
2500-2700
2570-2620
2620-2690
2545-2575
2570-2620
46.9
48.2
48.2
49.5
50
50.3
52
52
39
40
40
42
42
42.3
44
44
44
44.5
47
28
28
28
28
28
28
28
28
28
28
28
30
28
28
14.6
14.4
14.6
15
15
14.5
14
14
14
14
15.2
15
46.2
41
44
43
37.5
39
40
40
40
38
ASYM
SYM
SYM
SYM
SYM
BLF6G27-10G
1/2 BLF6G27LS-40P
1/2 BLF6G27LS-40P
1/2 BLF7G27L(S)-75P
BLF6G27S-45
1/2 BLF6G27LS-40P
1/2 BLF6G27LS-40P
1/2 BLF6G27LS-40P
1/2 BLF7G27L(S)-75P
BLF6G27S-45
1/2 BLF7G27LS-90P
2x BLF6G27-45
2x BLF6G27-45
BLF6G27(LS)-100
1/2 BLF7G27LS-150P
BLF7G27LS-100
BLF7G27LS-140
BLF7G27LS-140
SYM
1/2 BLF7G27LS-90P
BLF6G27-45
3-WAY
3-WAY
ASYM
SYM
BLF6G27-45
BLF6G27-45
52
52.5
54.1
55.2
55.3
55.4
1/2 BLF7G27LS-150P
BLF7G27LS-100
BLF7G27LS-100
BLF7G27LS-100
BLF7G27LS-100
43
41
41
40.4
SYM
47.2
47.3
47
ASYM
ASYM
ASYM
15
15
BLF7G27LS-140
3300-3800 MHz (WiMAX)
3400-3600
3500-3700
51
52
43
45
28
28
11.5
10
32
30
SYM
ASYM
BLF6G38-50
BLF6G38LS-50
BLF6G38-50
BLF6G38LS-100
98
NXP Semiconductors RF Manual 16th edition
3.7.2 RF power transistors for broadcast / ISM applications
Why choose NXP’s RF power transistors for broadcast / ISM applications:
` Highest power
` Best-in-class design support
` Best ruggedness
` Very low thermal resistance design for unrivalled
` Best broadband performance
reliability
NXP's leading LDMOS technologies, together with advanced package concepts, enable power amplifiers that deliver
best-in-class performance. We offer the industry’s highest power and best ruggedness for all broadcast technologies.
Our portfolio includes transistors for Ultra High Frequency (UHF), Very High Frequency (VHF), and High Frequency (HF)
applications and covers ISM frequency bands.
3.7.2.1 0-1000 MHz (UHF/VHF/HF/ISM) LDMOS line-up
fmin
fmax
P1dB
(W)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
Type
Product
Test signal Package
(MHz) (MHz)
BLF571
BLF645
Driver
10
1
1
500
1400
1000
800
500
1400
500
500
500
500
500
500
860
128
20
100
100
300
200
200
300
500
600
600
1200
1400
150
50
32
40
32
50
32
50
32
50
50
50
50
32
50
50
20
100
100
150
200
200
300
500
500
600
1000
1400
150
70
56
60
60
70
70
70
60
70
70
75
69
60
75
72
27,5
18
21
12,5
24
18
27.2
18
26.5
26
26
23
CW
CW
CW
CW
pulsed
pulsed
CW
CW
CW
pulsed
CW
pulsed
CW
pulsed
pulsed
SOT467C
SOT540A
SOT467
SOT540A
SOT1121
SOT1121
SOT502
SOT800-2
SOT539A
SOT539
SOT539A
SOT539
BLF871(S)
BLF647
BLF572XR(S)*
BLF647P(S)*
BLF573(S)
BLF369
BLF574
BLF574XR(S)*
BLF578
BLF578XR(S)*
BLF861A
BLF174XR(S)
BLF178XR(S)
1
10
10
10
10
10
10
10
10
470
10
10
Final
14
28
29
SOT540A
SOT539
SOT539
600
1400
600
1400
128
3.7.2.2 UHF 470-860 MHz LDMOS line-up
fmin
fmax
P1dB
(W)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
Type
Product
Test signal
Package
(MHz) (MHz)
BLF642
Driver
1
1
1
470
470
470
470
470
470
1400
1000
1000
860
860
860
860
860
860
35
32
40
50
42
50
42
50
50
50
35
63
60
49
46
46
47
46
46
46
19
21
21
21
21
21
19
21
21
CW
CW
CW
CW
CW
CW
CW
CW
CW
SOT467C
SOT467
SOT467
SOT979A
SOT1121
SOT539A
SOT979A
SOT539
SOT539
BLF871(S)
BLF881(S)
BLF878
BLF884P(S)
BLF879P
BLF888
100
140
300
300
500
500
600
600
100
140
300
150
200
250
250
250
Final
BLF888A(S)
BLF888B(S)
3.7.2.3 2.45 GHz ISM LDMOS transistor line-up
fmin
fmax
P1dB
(W)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
Type
Product
Test signal Package
(MHz) (MHz)
BLF25M612(G)
Driver
1
2500
2500
2500
2500
2500
12
28
28
28
28
28
12
60
52
55
52
55
19
17.5
12
15
15
CW
CW
CW
CW
CW
SOT975
SOT502
SOT539
SOT502
SOT539
BLF2425M7L(S)140
BLF2425M6L(S)180P
BLF2425M7L(S)200
BLF2425M7L(S)250P
2400
2400
2400
2400
140
180
200
250
140
180
200
250
Final
Bold red = new, highly recommended product
* Check status in section 3.1, as this type is not yet released for mass production
NXP Semiconductors RF Manual 16th edition
99
3.7.3 RF power transistors for aerospace and defense
Device naming conventions RF power transistors for aerospace and defense
B
L
S
6
G
2731
S
-120
G
option: gullwing shaped leads
P1dB power
S: earless package
P: pallet
frequency band (in 100MHz; here: 2700-3100)
G: standard LDMOS (≤ 28V)
H: high voltage LDMOS (50V)
LDMOS technology generation
A: avionics frequency band operation
L: L-band frequency operation
S: S-band frequency operation
L: high frequency power transistor
B: semiconductor die made of Si
Why choose NXP’s microwave RF power transistors
` High gain
` High efficiency
` Highest reliability
` Improved pulse droop and insertion phase
` Improved ruggedness - overdrive without risk to +5 dB
` Reduces component count and helps simplify L- and S-band radar design
` Uses non-toxic, RoHS-compliant packages
3.7.3.1 Avionics LDMOS transistors
fmin
fmax
P1dB
(W)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
Type
Product
Test signal Package
(MHz) (MHz)
BLA1011-2
BLA1011-10
1030
1030
1030
1030
1030
960
1030
960
1030
400
1090
1090
1090
1090
1090
1215
1090
1215
1090
1000
2
10
36
36
36
28
28
36
32
50
48
50
2
10
-
16
16
15
20
20
13.5
16.5
17
17
20
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
SOT538A
SOT467C
SOT502
SOT502A
SOT502
SOT502A
SOT957A
SOT634A
SOT539A
SOT539
Driver
40
50
65
65
50
57
50
52
57
BLA1011(S)-200R
BLA6G1011-200R
BLA6G1011LS-200RG
BLA0912-250R
BLA1011-300
BLA6H0912-500
BLA6H1011-600
BLU6H0410L(S)-600P
200
200
200
250
300
500
600
600
200
200
200
250
300
450
600
600
Final
3.7.3.2 L-band LDMOS transistors
fmin
fmax
P1dB
(W)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
Type
Product
Test signal Package
(MHz) (MHz)
BLL6H0514-25
BLL1214-35
500
1200
500
1200
1200
1200
1200
1400
1400
1400
1400
1400
1400
1400
25
35
50
36
50
36
36
50
50
25
35
50
43
50
47
45
55
50
19
13
17
13
15
17
17
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
SOT467C
SOT467C
SOT1135
SOT502A
SOT502A
SOT502
Driver
BLL6H0514L(S)-130
BLL1214-250R
BLL6G1214L-250
BLL6H1214L(S)-250
BLL6H1214(LS)-500
130
250
250
250
500
130
250
250
250
500
Final
SOT539A
Bold red = new, highly recommended product
100
NXP Semiconductors RF Manual 16th edition
3.7.3.3 S-band LDMOS transistors
fmin
fmax
P1dB
(W)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
Type
Product
Test signal Package
(MHz) (MHz)
BLS6G2731-6G
2700
3100
2700
2900
2300
2700
3100
2700
2900
2900
2700
3100
3100
3500
3500
3300
2500
3100
3500
3100
3300
3300
2900
3500
6
20
30
32
32
32
32
30
32
32
32
32
32
32
32
6
20
30
33
45
50
40
55
48
43
50
47
47
50
43
15
15.5
13
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
pulsed
SOT975C
SOT608
SOT1135
SOT502A
SOT502A
SOT502
BLS6G3135(S)-20
BLS6G2735L(S)-30
BLS2933-100
Driver
100
105
120
120
130
130
150
350
350
100
105
120
120
130
130
150
350
350
8
BLS7G2325L-105
BLS6G2731(S)-120
BLS6G3135(S)-120
BLS6G2731S-130
BLS6G2933S-130
BLS7G2933S-150
BLS7G2729L(S)-350P
BLS7G3135L(S)-350P
16.5
13.5
11
SOT502
Final
12
SOT922-1
SOT922-1
SOT922-1
SOT539
12.5
13.5
13.5
10
SOT539
3.7.4 Gallium Nitride (GaN) RF power amplifiers
Device naming conventions GaN RF power amplifiers
C
L
F
1G 0040
S
#
P
P:
push-pull indicator, P = push-pull type; no P means single-ended transistor
2 to 1500: nominal P3dB in Watts: eg 50 = 50W
S
earless type, S = earless; no S means eared package
35 to 60: upper frequency, 10x GHz value: 35 = 3.5GHz; 60 = 6.0GHz
00 to 40:lower frequency, 10x GHz value: 00 = 0GHz or DC; 40 = 4.0GHz
1G: technology generation: 1G = 1st generation
F: package style: F = ceramic, P = overmolded plastic
L: high frequency power transistor
C: primary material identifier: C = wide band-gap compound materials, eg GaN
fmin
fmax
Pout
(W)
VDS
(V)
Gp
(dB)
Test
signal
ηD
(%)
Type
Matching
Package
SOT1227
SOT1227
SOT467
SOT467
Applications
(MHz) (MHz)
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
CLF1G0060-10*
CLF1G0060-30*
CLF1G0035-50*
CLF1G0035-100*
0
0
0
0
6000
6000
3500
3500
10
30
-
-
-
-
50
50
50
50
54
54
54
52
14
14
Pulsed
Pulsed
Pulsed
Pulsed
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
Cellular, WiMAX, ISM, avionics,
S-band, general purpose
50
14.2
14.8
100
3.8 Wireless microcontroller chipsets and modules
Module/
single chip
TX
RX
Operating
voltage
Form
factor
Type
Application
TX power Receiver sensitivity
current current
2.4-2.4835 GHz
JenNet & IEEE802.15.4
2.4-2.4835 GHz
JenNet & IEEE802.15.4
2.4-2.4835 GHz
Integral antenna
18 x 32 mm
U.FL connector
18 x 30 mm
U.FL connector
18 x 41 mm
JN5148-001-M00
JN5148-001-M03
JN5148-001-M04
JN5142-J01
Module
Module
+2.5 dBm
+2.5 dBm
+20 dBm
+2.5 dBm
+2.5 dBm
+2.5 dBm
+2.5 dBm
+2.5 dBm
–95 dBm
–95 dBm
–98 dBm
–95 dBm
–95 dBm
–95 dBm
–95 dBm
–95 dBm
15 mA 17.5 mA 2.3-3.6 V
15 mA 17.5 mA 2.3-3.6 V
Module
110mA 23 mA
2.7-3.6 V
JenNet & IEEE802.15.4
2.4-2.4835 GHz
Single chip
Single chip
Single chip
Single chip
Single chip
15 mA 17.5 mA 2.3-3.6 V
15 mA 17.5 mA 2.3-3.6 V
15 mA 17.5 mA 2.3-3.6 V
15 mA 17.5 mA 2.3-3.6 V
15 mA 17.5 mA 2.3-3.6 V
6 x 6 mm QFN40
8 x 8 mm QFN56
6 x 6 mm QFN40
8 x 8 mm QFN56
8 x 8 mm QFN56
JenNet-IP
2.4-2.4835 GHz
JenNet-IP
2.4-2.4835 GHz
JN5148-J01
JN5142-001
RF4CE & IEEE802.15.4
2.4-2.4835 GHz
JenNet & IEEE802.15.4
2.4-2.4835 GHz
JN5148-001
JN5148-Z01
ZigBee PRO
Bold red = new, highly recommended product
* Check status in section 3.1, as this type is not yet released for mass production
NXP Semiconductors RF Manual 16th edition
101
4.ꢀ Designꢀsupport
This chapter will guide you through the available tools, documents, materials, and links that ease
the design-in of our products.
4.1ꢀ KnowingꢀNXP’sꢀRFꢀportfolioꢀ
4.3ꢀ Productꢀevaluation
Beyond this RF Manual, you can learn about NXP’s broad RF
NXP offers a broad range of support material for evaluating RF
portfolio through the NXP Technical Academy, various webinars products and optimizing the performance of your application.
and the NXP channel on YouTube.
Data sheets and application notes
The NXP Technical Academy provides training modules where
you can learn about our products and applications, watch
hands-on trainings and even get certified! The training modules
can be viewed on mobile devices as well.
The first chapter of this RF Manual includes application
diagrams, recommended type numbers, and product highlights.
More in-depth application information is available in the
second chapter, in product data sheets or in the Application
Notes section of the NXP website (www.nxp.com/products/
all_appnotes).
NXP provides RF webinars on a regular basis.
(www.nxp.com/news/meet-nxp/webinars-and-podcasts.html#rf)
Simulation tools
On NXP’s YouTube channel (www.youtube.com/user/
nxpsemiconductors), there are short videos that explain NXP's
portfolio, application information, tips and tricks to optimize
your systems performance, and more.
To help you evaluate our products in your specific application,
NXP offers various simulation tools, including small-signal
touchstone S-parameters and parametric models that let you
customize the biasing conditions. The parametric models are
based on best-in-class Mextram models and RFLDMOS models
developed by Philips Research, a recognized leader in physics-
based models. The parametric models fully support AC, DC,
S-parameter, harmonic balance, and time-domain simulations.
These models allow designers to assess the performance of
complex systems at an early stage of the development process.
4.2ꢀ ProductꢀselectionꢀonꢀNXP.comꢀ
Every RF product has its own webpage on the NXP website.
Pages can be accessed in several ways: by product tree, by
application area, or via cross-reference search. Or, simply type
'nxp <product>' in the Google search bar.
The models are available for Advanced Design System (ADS),
Microwave Office (MWO) and Ansoft Designer. Spice versions
of the parametric models, which can be used with almost any
commercial design tool, are also available.
Product tree and parametric search
The product tree (www.nxp.com/products/rf) categorizes the
product by function. The parametric search tool allows you to
refine the selection based on performance requirements.
Application area
To find out what NXP offers in each application area, use the
Explore Application section of the NXP website.
Cross reference
NXP maintains a cross-reference of competitor products
and NXP alternatives. This list can be searched online via the
search tool bar on the NXP website or off-line by installing the
X-Reference-Tool.
102
NXP Semiconductors RF Manual 16th edition
Customer evaluation kits and samples
4.5ꢀ Applicationꢀnotes
Several kits are available for evaluation of our products. Boards
are provided with industry-standard RF connectors to facilitate
measurements and integration in your application. The features
and content of each kit are described on the NXP website and
are listed on the corresponding product page. On the Customer
Evaluation Kits page you can also find support materials, such
as the latest user manuals and software updates. You can order
small quantities of all products to build and evaluate prototypes.
To obtain a kit or order samples, please contact your local NXP
representative or authorized distributor.
Productꢀ
Filename Description
category
Reducing the Spurs at RF_out caused by the biasing
choke during fast switching on and off in TDD system
Amplifiers
Amplifiers
AN11152
AN11148
AN11144
BGU7003 1900MHz to 2100MHz LNA Application
Universal Single LNB with TFF101x FIMOD IC
PLL’s and
Oscillators
Amplifiers
Amplifiers
Transistors
AN11135
AN11130
AN11118
Replacing HMC625 by NXP BGA7204
Bias module for 50 V GaN demonstration boards
BFU725F/N1 1.5 GHz LNA evaluation board
Amplifiers
Transistors
Amplifiers
Amplifiers
AN11103
AN11102
AN11101
AN11091
Externally-matched 900 MHz LNA using BGU7005
BFU725F/N1 2.4 GHz LNA evaluation board
BGU7007 GPS front end evaluation board
Ohmic FM LNA for embedded Antenna in Portable
applications with BGU6102
50 Ohm FM LNA for embedded Antenna in Portable
applications with BGU6102
Amplifiers
Amplifiers
Amplifiers
AN11090
AN11086
AN11072
BGU7003 LNA application for GPS L2 band
BGU7003 400MHz and 900 MHz applicaiton
BGU7005 matching options for improved LTE jammer
immunity
Amplifiers
Transistors
Amplifiers
Amplifiers
AN11068
AN11066
AN11062
AN11035
SDARS active antenna 1st stage LNA with BFU730F,
2.33 GHz
Broadband DVB-T UHF power amplifier with the
BLF888A
50 Ohm FM LNA for embedded Antenna in Portable
applications with BGU7003W
High Ohmic FM LNA for embedded Antenna in
Portable applications with BGU7003W
Amplifiers
Transistors
Transistors
AN11034
AN11024
AN11010
SDARS active antenna 2nd stage LNA with BFU690,
2.33 GHz
Single stage Ku band LNA using BFU730F
Transistors
Transistors
Amplifiers
AN11007
AN11006
AN10967
Single stage 5-6 GHz WLAN LNA with BFU730F
Single stage 2.3_2.7GHz LNA with BFU730F
BLF578 demo for 352 MHz 1kW CW power
4.4ꢀ Additionalꢀdesign-inꢀsupportꢀꢀ
Amplifiers
Amplifiers
Amplifiers
Amplifiers
AN10953
AN10951
AN10945
AN10944
BLF645 10 MHz to 600 MHz 120 W amplifier
If you need additional design-in support, please contact your
local NXP sales representative or authorized distributor. You can
also submit a question using the web form on the NXP website.
1805 MHz to 1880 MHz asymmetrical Doherty amplifier
with the BLF7G20LS-90P and BLF7G21LS-160P
174 MHz to 230 MHz DVB-T power amplifier with the
BLF881
1930 MHz to 1990 MHz Doherty amplifier using the
BLF7G20LS-200
2.5 GHz to 2.7 GHz Doherty power amplifier using the
BLF7G27LS-150P
Amplifiers
Amplifiers
Amplifiers
AN10933
AN10923
AN10921
1.5GHz Doherty power amplifier for base station
applications using the BLF6G15L-250PBRN
BLF7G20LS-200 Doherty 1.805-1.88 GHz RF power
amplifier
Amplifiers
Amplifiers
Amplifiers
AN10896
AN10885
AN10882
Mounting and Soldering of RF transistors
Doherty RF performance analysis using the
BLF7G22LS-130
Dependency of BLF578 gate bias voltage on
temperature
Amplifiers
Amplifiers
Amplifiers
Amplifiers
Amplifiers
AN10869
AN10858
AN10847
AN10800
AN10714
Broadband DVB-T UHF power amplifier with the BLF888
174 MHz to 230 MHz DVB-T power amplifier with the
BLF578
Doherty RF performance using the BLF6G20-230PRN
Using the BLF578 in the 88 MHz to 108 MHz FM band
Using the BLF574 in the 88-108 MHz FM band
NXP Semiconductors RF Manual 16th edition
103
MicrowaveꢀOfficeꢀ
model
4.6ꢀ Simulationꢀmodels
Type
ADSꢀmodel
BLF6G38-10G
BLF6G38-25
Available
Available
Available
Available
BLF6G38-50
Available
Available
Available
Available
Available
Available
4.6.1ꢀ SimulationꢀmodelsꢀforꢀRFꢀpowerꢀdevices
BLF6G38LS-100
BLF6G38LS-50
BLF6G38S-25
BLF7G15LS-300P
Available
Available
Updates of this overview are available in PDF format at:
http://www.nxp.com/wcm_documents/models/RFPower_
Model_Overview.pdf
BLF7G15LS-200
BLF7G20L-200
BLF7G20L-250P
BLF7G20L-90P
BLF7G20LS-140P
Available
Available
Available
Available
Available
MicrowaveꢀOfficeꢀ
model
Type
ADSꢀmodel
BLA6G1011-200R
Available
Available
Available
Available
BLF7G20LS-200
BLF7G20LS-250P
BLF7G20LS-90P
BLF7G21L-160P
BLF7G21LS-160P
Available
Available
Available
Available
Available
BLA6G1011L-200RG
BLA6G1011LS-200RG
BLA6H0912-500
BLA6H1011-600
BLF369
Available
Available
Available
Available
Available
Available
Available
Available
BLF7G22L-130
BLF7G22L-160
BLF7G22L-200
BLF7G22L-250P
BLF7G22LS-130
Available
Available
Available
Available
Available
Available
Available
BLF3G21-6
BLF571
BLF573
BLF573S
BLF574
BLF578
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
BLF7G22LS-160
BLF7G22LS-200
BLF7G22LS-250P
BLF7G24L-100
BLF7G24L-140
Available
Available
Available
Available
Available
BLF645
Available
Available
Available
Available
Available
Available
Available
BLF6G10-135RN
BLF6G10-200RN
BLF6G10-45
Available
BLF7G24LS-100
BLF7G24LS-140
BLF7G27L-100
BLF7G27L-140
BLF7G27L-150P
Available
Available
Available
Available
Available
BLF6G10L-260PRN
BLF6G10L-40BRN
BLF6G10LS-135RN
BLF6G10LS-200RN
BLF6G10LS-260PRN
BLF6G10S-45
Available
Available
Available
Available
Available
Available
Available
BLF7G27L-200PB
BLF7G27L-75P
BLF7G27L-90P
BLF7G27LS-100
BLF7G27LS-140
Available
Available
Available
Available
Available
BLF6G15L-250PBRN
BLF6G15L-40BRN
BLF6G20-180RN
BLF6G20-230PRN
BLF6G20-45
Available
Available
Available
Available
Available
BLF7G27LS-150P
BLF7G27LS-75P
BLF7G27LS-90P
BLF871
Available
Available
Available
Available
Available
BLF6G20LS-180RN
BLF6G20S-230PRN
BLF6G20S-45
Available
Available
Available
Available
Available
Available
Available
Available
BLF871S
BLF878
BLF881
BLF881S
BLF888
Available
Available
Available
Available
Available
Available
Available
Available
Available
BLF6G21-10G
BLF6G22-180RN
BLF6G22-45
Available
Available
Available
Available
Available
Available
BLF6G22L-40P
BLF6G22LS-180RN
BLF6G22LS-40P
BLF6G22S-45
BLF888A
Available
Available
Available
Available
Available
Available
Available
Available
Available
Available
BLF888AS
Available
BLL6H0514-25
BLL6H0514L-130
BLL6H0514LS-130
BLF6G27-10
BLF6G27-10G
BLF6G27-135
BLF6G27-45
Available
Available
Available
Available
Available
Available
BLL6H1214-500
BLL6H1214L-250
BLL6H1214LS-250
BLM6G22-30
Available
Available
Available
Available
Available
Available
Available
BLF6G27-75
Available
Available
Available
Available
Available
BLF6G27L-40P
BLF6G27LS-135
BLF6G27LS-40P
BLF6G27LS-75
BLS6G2731-6G
BLS6G2731S-130
BLS6G3135-120
BLS6G3135-20
BLS6G3135S-120
BLS6G3135S-20
Available
Available
Available
Available
Available
Available
Available
BLF6G27S-45
BLF6G38-10
BLF6G38-100
Available
Available
Available
Available
Available
104
NXP Semiconductors RF Manual 16th edition
4.6.2ꢀ SimulationꢀmodelsꢀforꢀRFꢀbipolarꢀwidebandꢀtransistors
ADSꢀ2009ꢀdesignꢀkitꢀv2.2
MicrowaveꢀOfficeꢀdesignꢀkit
AnsoftꢀDesignerꢀdesignꢀkit
Type
BFG67
BFG67/X
BFG10
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
BFG10W
BFG10W/X
√
√
√
√
√
√
√
√
√
√
BFG135
√
√
√
√
√
BFG198
BFG21W
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
BFG25A/X
BFG25AW/X
√
√
√
√
√
√
√
√
√
√
√
√
√
BFG31
BFG35
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
BFG310/XR
BFG310W/XR
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
BFG325/XR
BFG325W/XR
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
BFG403W
BFG410W
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
BFG424F
BFG424W
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
BFG425W
BFG480W
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
BFG505
BFG505/X
√
√
√
√
√
√
√
√
√
√
√
√
√
BFG505W/X
BFG520
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
BFG520W
BFG520X
√
√
√
√
√
√
√
√
√
√
BFG520/XR
BFG540
√
√
√
√
√
√
√
√
√
√
√
√
√
BFG540/X
BFG540/XR
√
√
√
√
√
√
√
√
√
√
BFG540W
BFG541
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
BFG590
BFG590/X
√
√
√
√
√
√
√
√
√
√
√
√
√
BFG591
BFG92A/X
√
√
√
√
√
√
√
√
√
√
√
√
√
BFG93A
BFG94
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
BFG97
BFM505
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
BFM520
BFQ149
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
BFG18A
BFQ19
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
BFQ540
BFQ67
√
√
√
√
√
√
√
√
√
√
√
√
√
BFQ67W
BFR106
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
BFR505
BFR505T
√
√
√
√
√
√
√
√
√
√
√
√
√
BFR520
BFR540
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
BFR92A
BFR92AW
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
BFR93A
BFR93AW
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
BFS17
BFS17A
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
BFS17W
BFS25A
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
BFS505
BFS520
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
NXP Semiconductors RF Manual 16th edition
105
4.6.2ꢀ SimulationꢀmodelsꢀforꢀRFꢀbipolarꢀwidebandꢀtransistorsꢀ(continued)
ADSꢀ2009ꢀdesignꢀkitꢀv2.2
MicrowaveꢀOfficeꢀdesignꢀkit
AnsoftꢀDesignerꢀdesignꢀkit
Type
BFS540
BFT25
BFT25A
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
BFT92
BFT92W
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
BFT93
√
√
√
√
√
√
√
√
BFT93W
BFU725F
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
BFU725F/N1
BFU610F
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
BFU630F
BFU660F
√
√
√
√
√
√
√
√
√
√
√
√
√
√
BFU690F
BFU710F
√
√
√
√
√
√
√
√
√
√
√
√
√
√
BFU730F
BFU730LX
√
√
√
√
√
√
√
√
√
BFU760F
BFU790F
√
√
√
√
√
√
√
√
√
√
√
√
√
√
PBR941
PBR951
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
PRF947
PRF949
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
√
PRF957
√
√
√
√
√
√
√
√
4.6.3ꢀ SimulationꢀmodelsꢀforꢀRFꢀMOSFETꢀtransistors
ADSꢀ2009ꢀdesignꢀkitꢀv2.2
MicrowaveꢀOfficeꢀdesignꢀkit
AnsoftꢀDesignerꢀdesignꢀkit
Type
BF1211
BF1211R
√
√
√
√
√
√
√
√
BF1211WR
BF1212
√
√
√
√
√
√
√
√
BF1212R
BF1212WR
√
√
√
√
√
√
√
√
BF511
BF513
√
√
√
√
√
√
√
√
BF862
BF904
√
√
√
√
√
√
√
√
√
BF908
BF909
√
√
√
√
√
√
√
√
BF998
√
√
√
√
4.6.4ꢀ SimulationꢀmodelsꢀforꢀRFꢀvaricapꢀdiodes
ADSꢀ2009ꢀdesignꢀkitꢀv2.2
MicrowaveꢀOfficeꢀdesignꢀkit
AnsoftꢀDesignerꢀdesignꢀkit
Type
BB145B
BB149
BB149A
√
√
√
√
√
√
√
√
√
√
√
√
BB156
BB179
√
√
√
√
√
√
√
√
BB179B
√
√
√
√
BB201
BB202
√
√
√
√
√
√
√
√
BB207
BB208-2
√
√
√
√
√
√
√
√
106
NXP Semiconductors RF Manual 16th edition
4.6.5ꢀ SimulationꢀmodelsꢀforꢀRFꢀMMICꢀamplifiers
ADSꢀ2009ꢀdesignꢀkitꢀv2.2
MicrowaveꢀOfficeꢀdesignꢀkit
AnsoftꢀDesignerꢀdesignꢀkit
Type
BGA2001
BGA2002
BGA2003
√
√
√
√
√
√
√
√
√
√
√
BGA2711
BGA2748
√
√
√
√
√
√
√
√
√
√
BGA2771
√
√
√
√
√
BGA2776
BGA2709
√
√
√
√
√
√
√
√
√
√
BGA2712
BGA2714
√
√
√
√
√
√
BGA2715
BGA2716
√
√
√
√
√
√
√
√
√
√
BGA2717
BGA2011
√
√
√
√
√
√
√
√
√
BGA2012
BGA2031
√
√
√
√
√
√
BGA6289
BGA6489
√
√
√
√
√
√
√
√
√
√
BGA6589
BGA2800
√
√
√
√
√
√
√
√
√
√
BGA2801
BGA2815
√
√
√
√
√
√
√
√
√
√
BGA2816
BGA2850
√
√
√
√
√
√
√
√
√
√
BGA2865
BGA2866
√
√
√
√
√
√
√
√
√
√
BGA7024
BGA7027
√
√
√
√
BGA7124
BGA7127
√
√
√
√
√
√
√
BGM1011
BGM1012
√
√
√
√
√
√
√
√
√
√
BGM1013
BGM1014
√
√
√
√
√
√
√
√
√
√
BGU6102
BGU7031
√
√
BGU7032
BGU7033
√
√
BGU7041
BGU7042
√
√
BGU7044
BGU7045
√
√
BGU7050
BGU7051
√
√
BGU7052
BGU7053
√
√
BGU7061
BGU7062
√
√
BGU7063
BGU7064
√
√
BGU7003
BGU7003W
√
√
√
BGU7004
BGU7005
√
√
√
√
BGU7007
BGU8007
√
√
√
√
NXP Semiconductors RF Manual 16th edition
107
5.ꢀ Cross-referencesꢀ&ꢀreplacements
NXP cross-references:
http://www.nxp.com/xref/nxp?typenumber
NXP end-of-life:
http://www.nxp.com/products/eol/
5.1 Cross-references: manufacturer types versus NXP types
In alphabetical order of manufacturer type
Abbreviations:
Base station
Broadcasts
BS diode
CATV OR
CATV PD
CATV PPA
CATV PPA/HG
CATV RA
FET
Base station power transistors
Broadcast power transistors
Band switch diode
CATV optical receiver
CATV power doubler
CATV push-pull amplifier
CATV push-pull amplifier high gain
CATV reverse amplifier
Field-effect transistor
A&D
Microwave power transistors
Monolithic microwave integrated circuit
Varicap diode
MMIC
Varicap
WB trs 1-4
WB trs 5-7
Wideband transistor 1-4 generation
Wideband transistor 5-7 generation
Productꢀ
Productꢀ
family
Manufacturerꢀtype
Manufacturerꢀ
NXPꢀtype
Manufacturerꢀtype
Manufacturerꢀ
NXPꢀtype
family
A&D
3001
Microsemi
Microsemi
Microsemi
Microsemi
Triquint
RFMD
BLS7G3135LS-350P
BLS7G3135L-350P
BLS6G3135S-20
BLA1011-200R
BGA7127
1SV247
1SV248
1SV249
1SV250
1SV251
1SV252
1SV254
1SV263
1SV264
1SV266
1SV267
1SV269
1SV270
1SV271
1SV278
1SV279
1SV282
1SV282
1SV283
1SV283
1SV284
1SV288
1SV290
1SV294
1SV305
1SV307
1SV308
1T362
Sanyo
BAP70-02
BAP50-02
BAP50-04W
BAP50-03
BAP50-04
BAP50-04W
BB179
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
Varicap
3003
A&D
Sanyo
3005
A&D
Sanyo
10502
A&D
Sanyo
AH125
MMIC
Sanyo
SXB-4089
0510-50A
1011LD110A
1011LD110B
1014-12
1014-2
BGA7127
MMIC
Toshiba
Toshiba
Sanyo
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Toshiba
Rohm
BLF1043
Broadcast
A&D
BLA1011-300
BLA1011S-200
BLL1214-250R
BLL1214-35
BLL6G1214L-250
BLF1046
BAP50-02
BAP50-04W
BAP50-03
BAP50-04
BB148
PIN diode
PIN diode
PIN diode
PIN diode
Varicap
A&D
Sanyo
A&D
Sanyo
A&D
Sanyo
1014-6A
10AM20
1617-35
1SS314
1SS356
1SS381
1SS390
1SV172
1SV214
1SV214
1SV215
1SV228
1SV231
1SV232
1SV233
1SV234
1SV239
1SV241
1SV246
A&D
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Sanyo
Broadcast
A&D
BB156
Varicap
BLL6G1214LS-250
BA591
BAP50-03
BB179
PIN diode
Varicap
BS diode
BS diode
BS diode
BS diode
PIN diode
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
PIN diode
PIN diode
Varicap
PIN diode
PIN diode
BA591
BB179
Varicap
Toshiba
Rohm
BA277
BB178
Varicap
BA891
BB187
Varicap
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Sanyo
BAP50-04
BB149
BB178
Varicap
BB187
Varicap
BB149A
BB156
Varicap
BB153
BB152
Varicap
BB201
BB182
Varicap
BB152
BAP70-03
BB202
PIN diode
Varicap
BB148
Toshiba
Toshiba
Toshiba
PEC
BAP70-03
BAP64-04
BB145B
BAP51-03
BAP51-02
BB149
PIN diode
PIN diode
Varicap
Sanyo
Toshiba
Sanyo
BAP64-02
BAP64-04W
1T362A
1T363A
PEC
BB149A
BB153
Varicap
Sanyo
PEC
Varicap
108
NXP Semiconductors RF Manual 16th edition
Productꢀ
family
Productꢀ
family
Manufacturerꢀtype
Manufacturerꢀ
NXPꢀtype
Manufacturerꢀtype
Manufacturerꢀ
NXPꢀtype
1T368A
PEC
BB148
Varicap
2SC5594
2SC5623
2SC5624
2SC5631
2SC6023
2SK210BL
2SK508
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Sanyo
BFG425W
BFG410W
BFG425W
BFQ540
WB trs 5-7
WB trs 5-7
WB trs 5-7
WB trs 1-4
WB trs 5-7
FET
1T369
PEC
BB152
Varicap
1T379
PEC
BB131
Varicap
1T397
PEC
BB152
Varicap
1T399
PEC
BB148
Varicap
BFG424W
PMBFJ309
PMBFJ308
BF998WR
BGA7350
1T402
PEC
BB179B
Varicap
Renesas Electronics
Renesas Electronics
Renesas Electronics
ADI
1T403
PEC
BB178
Varicap
FET
1T404A
PEC
BB187
Varicap
3SK290
FET
1T405A
PEC
BB187
Varicap
AD8376
MMIC
1T406
PEC
BB182
Varicap
AD8376
ADI
BGA7351
MMIC
1T408
PEC
BB187
Varicap
ADL5354
ADL5356
ADL5358
ADL5372
ADL5375
ADL5812
ADRF660x
AH115-S8G
AH116-S8G
AH118
ADI
BGX7221
MMIC
2324-12L
2324-20
2324-25
2424-25
2F1G20DS
2F1G20DS
2F1G20P
2F1G22DS
2F1G22DS
2F1G22DS
2F1G23P
2F1G23P
2F1G24D
2F1G24D
2F1G24DS
2F722DS
2F8718P
2F8719DS
2F8720DS
2F8723P
2F8734P
2N4856
2N4857
Microsemi
Microsemi
Microsemi
Microsemi
RFHIC
BLS6G2731S-120
BLS6G2731-6G
BLS6G2731-120
BLS6G2731S-130
CGD1040Hi
CGD1042H
CGY1041
CGD1042H
CGD1042Hi
CGD982HCi
CGY1041
CGY1043
CGD1044Hi
CGD985HCi
CGD1044H
BGD816L
BGY885A
BGD812
A&D
ADI
BGX7221
MMIC
A&D
ADI
BGX7220
MMIC
A&D
ADI
BGX710x
MMIC
A&D
ADI
BGX710x
MMIC
CATV PD
CATV PD
CATV PP
CATV PD
CATV PD
CATV PD
CATV PP
CATV PP
CATV PD
CATV PD
CATV PD
CATV PD
CATV PP
CATV PD
CATV PD
CATV PP
CATV PP
FET
ADI
BGX7221
MMIC
RFHIC
ADI
BGX721x
MMIC
RFHIC
Triquint
BLF8G27LS-140V
BLF6G10-135RN
BGA7024
Base station
Base station
MMIC
RFHIC
Triquint
RFHIC
Triquint
RFHIC
AH118
Triquint
BGA7024
MMIC
RFHIC
AH118
Triquint
BGA7124
MMIC
RFHIC
AH118
Triquint
BGA7124
MMIC
RFHIC
AH125
Triquint
BGA7027
MMIC
RFHIC
AH125
Triquint
BGA7127
MMIC
RFHIC
AH212-EG
AH212-S8G
AH215
Triquint
BLF6G38-10
BLF6G38-100
BGA7130
Base station
Base station
MMIC
RFHIC
Triquint
RFHIC
Triquint
RFHIC
AH215
Triquint
BGA7130
MMIC
RFHIC
BGD814
AH215-S8G
AH225-S8G
AH312-S8G
AH314-G
AH315-G
AH315-G
AH315-G
AH315-G
AH315-G
AH315-G
AN26112A
AN26120A
AN26122A
BA592
Triquint
BLF6G27-10
BLF6G27-10G
BLF7G24L-100
BLF6G27LS-100
BLF6G10-160RN
BLF6G10-200RN
BLF7G24L-140
BLF7G24L-160P
BLF6G27LS-135
BLF6G27LS-40P
BGU7045
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
MMIC
RFHIC
BGY887
Triquint
RFHIC
CGY888C
BSR56
Triquint
Standard
Triquint
Standard
BSR57
FET
Triquint
2N4858
Standard
BSR58
FET
Triquint
2SC4094
2SC4095
2SC4182
2SC4184
2SC4185
2SC4186
2SC4226
2SC4227
2SC4228
2SC4247
2SC4248
2SC4315
2SC4320
2SC4321
2SC4325
2SC4394
2SC4536
2SC4537
2SC4592
2SC4593
2SC4703
2SC4784
2SC4807
2SC4842
2SC4899
2SC4900
2SC4901
2SC4988
2SC5011
2SC5012
2SC5065
2SC5085
2SC5087
2SC5088
2SC5090
2SC5092
2SC5095
2SC5107
2SC5463
2SC5508
2SC5508
2SC5593
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Toshiba
BFG520/XR
BFG520/XR
BFS17W
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 5-7
WB trs 5-7
WB trs 5-7
Triquint
Triquint
Triquint
BFS17W
Triquint
BFS17W
Panasonic
Panasonic
Panasonic
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Vishay
BFR92AW
PRF957
BGU7042
MMIC
BGU7045
MMIC
BFQ67W
BFS505
BA591
BS diode
PIN diode
PIN diode
PIN diode
PIN diode
BS diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
BA595
BAP51-03
BAP70-03
BAP70-03
BAP70-03
BA891
BFR92AW
BFR92AW
BFG520/XR
BFG520/XR
BFQ67W
BFS505
BA595
Toshiba
BA597
Toshiba
BA885
Toshiba
BA892
Toshiba
BA892-02V
BA892-02V
BA892V-02V-GS08
BA895
BA277
Toshiba
BA891
Toshiba
PRF957
BA891
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Toshiba
BFQ19
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Vishay
BAP70-02
BAP70-03
BAP70-03
BAP70-03
BAP50-03
BAP50LX
BFR93AW
BFG520/XR
BFS520
BAR14-1
BAR15-1
BAR16-1
BFQ19
BAR17
BFS505
BAR50-02L
BAR50-02V
BAR50-02V
BAR50-02V
BAR50-03W
BAR60
BFQ18A
BAP50-02
BAP50-03
BAP50-05
BAP70-02
BAP50-03
BAP50-03
BAP63-03
BAP63-02
BAP63LX
BFG540W/XR
BFS505
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Toshiba
BFG520/XR
BFS520
BFQ540
BAR61
BFG540W/XR
BFG540W/XR
PRF957
BAR63
BAR63-02L
BAR63-02L
BAR63-02V
BAR63-02W
BAR63-03W
BAR63-05
BAR63-05W
BAR63V-02V-GS08
BAR63V-05W-GS08
BAR64-02LRH
BAR64-02V
BAR64-02W
BAR64-03W
Toshiba
PRF957
BAP63-02
BAP63-02
BAP63-03
BAP63-05W
BAP63-05W
BAP63-02
BAP63-05W
BAP64LX
Toshiba
BFG520/XR
BFG540W/XR
BFS520
Toshiba
Toshiba
Toshiba
BFG520/XR
BFS505
Toshiba
Toshiba
BFS505
Vishay
Toshiba
BFQ67W
BFU660F
BFU660F
BFG410W
Infineon
Infineon
Infineon
Infineon
Renesas Electronics
Renesas Electronics
Renesas Electronics
BAP64-02
BAP64-02
BAP64-03
NXP Semiconductors RF Manual 16th edition
109
Productꢀ
family
Productꢀ
family
Manufacturerꢀtype
Manufacturerꢀ
NXPꢀtype
Manufacturerꢀtype
Manufacturerꢀ
NXPꢀtype
BAR64-04
BAR64-04W
BAR64-05
BAR64-05W
BAR64-06
BAR64-06W
BAR64V-02V-GS08
BAR64V-04-GS08
BAR64V-05-GS08
BAR64V-06-GS08
BAR64V-06W-GS08
BAR65-02L
BAR65-02V
BAR65-02W
BAR65-03W
BAR65V-02V-GS08
BAR66
Infineon
BAP64-04
BAP64-04W
BAP64-05
BAP64-05W
BAP64-06
BAP64-06W
BAP64-02
BAP64-04
BAP64-05
BAP64-06
BAP64-06W
BAP65LX
BAP65-02
BAP65-02
BAP65-03
BAP65-02
BAP1321-04
BAP1321-02
BAP1321-03
BAT18
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
FET
BF996S
Vishay
BF996S
FET
Infineon
BF998
Infineon
Vishay
BF998
FET
Infineon
BF998
BF998
FET
Infineon
BF998-GS08
BF998R
Vishay
BF998
FET
Infineon
Vishay
BF998R
FET
Infineon
BF998R
Infineon
Vishay
BF998R
FET
Vishay
BF998R-GS08
BF998RW
BF998W
BF998R
FET
Vishay
Vishay
BF998WR
BF998WR
BFG135
FET
Vishay
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Vishay
FET
Vishay
BFG135A
BFG193
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 5-7
WB trs 5-7
WB trs 5-7
WB trs 5-7
WB trs 5-7
Vishay
BFG198
Infineon
BFG194
BFG31
Infineon
BFG196
BFG541
Infineon
BFG19S
BFG97
Infineon
BFG235
BFG135
Vishay
BFP180
BFG505/X
BFG67/X
BFG67/X
BFG67/X
BFG520/X
BFG520/XR
BFG520/X
BFG520W/X
BFG540/X
BFG540W/XR
BFG540/X
BFG540/XR
BFG540W/XR
BFG540W/X
BFG540W/XR
BFG505/X
BFG410W
BFG425W
BFG480W
BFU660F
BFU630F, BFU660F
Infineon
BFP181
BAR67-02W
BAR67-03W
BAT18-04
BB304C
Infineon
BFP181T-GS08
BFP182
Infineon
Infineon
Infineon
Infineon
Vishay
Infineon
BFP183
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Infineon
BF1201WR
BF1201R
BF1201WR
BF1201R
BF909R
BFP183R
BB304M
BB305C
FET
BFP183T-GS08
BFP183TW-GS08
BFP193
FET
Vishay
BB305M
BB403M
BB501C
FET
Infineon
Infineon
Vishay
FET
BFP193W
BFP196T-GS08
BFP196TR-GS08
BFP196TRW-GS08
BFP196TW-GS08
BFP196W
BFP280
BF1202WR
BF1202R
BF1202WR
BF1202R
BF1202WR
BF1202R
BB149
FET
BB501M
FET
Vishay
BB502C
FET
Vishay
BB502M
BB503C
FET
Vishay
FET
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
BB503M
BB535
FET
Varicap
Varicap
Varicap
Varicap
FET
BFP405
BB545
Infineon
BB149A
BFP420
BB555
Infineon
BB179B
BFP450
BB565
Infineon
BB179
BFP620
BB601M
Renesas Electronics
Infineon
BF1202
BFP640
BB639
BB148
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
FET
BFU690F, BFU760F,
BFU790F
BFP650
Infineon
WB trs 5-7
BB639
Infineon
BB153
BFP67-GS08
BFP67R-GS08
BFP720
Vishay
BFG67/X
WB trs 1-4
WB trs 1-4
WB trs 5-7
WB trs 5-7
WB trs 5-7
WB trs 5-7
BB640
Infineon
BB152
Vishay
BFG67/X
BB641
Infineon
BB152
Infineon
Infineon
Infineon
Infineon
BFU710F, BFU730F
BFU710F, BFU730F
BFU725F
BB659
Infineon
BB178
BFP740
BB664
Infineon
BB178
BFP740
BB664
Infineon
BB187
BFP740F
BFU725F
BB669
Infineon
BB152
BB814
Infineon
BB201
BFU690F, BFU760F,
BFU790F
BFP750
Infineon
WB trs 5-7
BB831
Infineon
BB131
BFP81
Infineon
Vishay
BFG92A/X
BFG92A/X
BFG93A/X
BFG93A/X
BFQ540
BFQ19
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
BB833
Infineon
BB131
BFP92A-GS08
BFP93A
BB835
Infineon
BB131
Infineon
Vishay
BBY58-02V
BBY65
Infineon
BB202
BFP93A-GS08
BFQ193
Infineon
BB202
Infineon
Infineon
Vishay
BF1005R
BF1005S
BF1005SR
BF2030
Infineon
BF1105R
BF1105
BFQ19S
Infineon
FET
BFQ67-GS08
BFR106
BFQ67W
BFR106
BFR505
BFS505
BFR520
BFR520
BFS520
BFS520
PBR941
PRF947
Infineon
BF1105R
BF1211
FET
Infineon
Infineon
Infineon
Infineon
Vishay
Infineon
FET
BFR180
BF2030
Infineon
BF1212
FET
BFR180W
BF2030R
BF2030R
BF2030W
BF2030W
BF2040
Infineon
BF1211R
BF1212R
BF1211WR
BF1212WR
BF909
FET
BFR181
Infineon
FET
BFR181T-GS08
BFR181TW-GS08
BFR181W
Infineon
FET
Vishay
Infineon
FET
Infineon
Infineon
Infineon
Infineon
Vishay
Infineon
FET
BFR182
BF2040R
BF2040W
BF5020
Infineon
BF909R
FET
BFR182W
Infineon
BF909WR
BF1212
FET
BFR183
PBR951
PBR951
PRF957
Infineon
FET
BFR183T-GS08
BFR183TW-GS08
BFR183W
BF5020R
BF5020W
BF5030W
BF770A
Infineon
BF1212R
BF1212WR
BF909WR
BFR93A
PBR951
FET
Vishay
Infineon
FET
Infineon
Infineon
Vishay
PRF957
Infineon
FET
BFR193
PBR951
PRF957
Infineon
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
FET
BFR193TW-GS08
BFR193W
BF771
Infineon
Infineon
Vishay
PRF957
BF771W
Infineon
BFS540
BFR196T-GS08
BFR196TW-GS08
BFR35AP
BFR540
BFS540
BFR92A
BFR92A
BFR92AW
BFR92A
BFR92AW
BFR93A
BF772
Infineon
BFG540
BFR92A
BFR92A
BFR92AW
BF861A
Vishay
BF775
Infineon
Infineon
Freescale
Vishay
BF775A
Infineon
BFR92AL
BF775W
BF851A
Infineon
BFR92AW-GS08
BFR92P
Standard
Standard
Standard
Vishay
Infineon
Infineon
Infineon
BF851B
BF861B
FET
BFR92W
BF851C
BF861C
FET
BFR93A
BF994S
BF994S
FET
110
NXP Semiconductors RF Manual 16th edition
Productꢀ
family
Productꢀ
family
Manufacturerꢀtype
Manufacturerꢀ
NXPꢀtype
Manufacturerꢀtype
Manufacturerꢀ
NXPꢀtype
BFR93AL
Freescale
Infineon
Vishay
BFR93A
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
FET
D8740270GTH
D8740320GT
D8740320GTH
EC2C03C
FSD273TA
FSD273TA
HBFP0405
HBFP0420
HBFP0450
HMC454ST89E
HMC454ST89E
HMC454ST89E
HMC617LP3
HMC618LP3
HMC625
RFMD
CGD944C
CGD888C
CGD888C
BB145B
CATV PD
CATV PD
CATV PD
Varicap
BFR93AW
BFR93AW-GS08
BFR93-GS08
BFS17-GS08
BFS17-GS08
BFS17L
BFR93AW
BFR93AW
BFR93A
RFMD
RFMD
Vishay
Sanyo
Vishay
BFS17
Skyworks
BB148
Varicap
Vishay
BFS17A
Skyworks
BB178
Varicap
Freescale
Infineon
Infineon
Vishay
BFS17
Agilent
BFG410W
BFG425W
BFG480W
BGA7027
BGA7127
BGA7127
BGU7051
BGU7052
BGA7204
BGU7053
BA277
WB trs 5-7
WB trs 5-7
WB trs 5-7
MMIC
BFS17P
BFS17A
Agilent
BFS17W
BFS17W
Agilent
BFS17W-GS08
BFS481
BFS17W
Hittite
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Mimix
BFM505
Hittite
MMIC
BFS483
BFM520
Hittite
MMIC
BFT92
BFT92
Hittite
MMIC
BFT93
BFT93
Hittite
MMIC
BG3123
BF1203
Hittite
MMIC
BG3123R
BF1203
FET
HMC667LP2
HSC277
Hittite
MMIC
BG3130
BF1214
FET
Renesas Electronics
Agilent
BS diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
Varicap
BG3130R
BF1214
FET
HSMP3800
HSMP3802
HSMP3804
HSMP3810
HSMP3814
HSMP381B
HSMP381C
HSMP381F
HSMP3820
HSMP3822
HSMP3830
HSMP3832
HSMP3833
HSMP3834
HSMP3860
HSMP3862
HSMP3864
HSMP386B
HSMP386E
HSMP386L
HSMP3880
HSMP3890
HSMP3892
HSMP3894
HSMP3895
HSMP389B
HSMP389C
HSMP389F
HVB14S
BAP70-03
BAP50-04
BAP50-05
BAP50-03
BAP50-05
BAP50-03
BAP50-05
BAP64-05W
BAP1321-03
BAP1321-04
BAP64-03
BAP64-04
BAP64-06
BAP64-05
BAP50-03
BAP50-04
BAP50-05
BAP50-02
BAP50-04W
BAP50-05W
BAP51-03
BAP51-03
BAP64-04
BAP64-05
BAP51-02
BAP51-02
BAP64-04
BAP51-05W
BAP50-04W
BAP65-02
BAP51-02
BB178
BG3430R
BF1207
FET
Agilent
BG5120K
BF1210
FET
Agilent
BG5130R
BF1206
FET
Agilent
BG5412K
BF1208D
BGU7003
BGU7003
BGU7007
BGU8007
BGU7005
BGU6102
BGU6102
BF1105WR
BF1105R
FET
Agilent
BGA428
MMIC
Agilent
BGA461
MMIC
Agilent
BGA615
MMIC
Agilent
BGA715
MMIC
Agilent
BGA915
MMIC
Agilent
BGB707
MMIC
Agilent
BGB717
MMIC
Agilent
BIC701C
FET
Agilent
BIC701M
FET
Agilent
BIC702C
BF1105WR
BF1105R
FET
Agilent
BIC702M
FET
Agilent
BIC801M
BF1105
FET
Agilent
BSR111
PMBFJ111
PMBFJ112
PMBFJ113
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
BGX885N
BGX885N
BGA7024
BGA7124
BGA7124
BGA7204
BGA2022
BGA2022
BGA6489
BGA6589
CGD1042H
CGD1042H
CGD1042H
CGD1042H
CGD1042H
CGD1042H
CGD1042H
CGD1042H
CGD1042H
CGD1042H
CGD1044H
CGD1044H
CGD1044H
CGD1044H
CGD1044H
CGD1044H
CGD1044H
CGD942C
CGD942C
CGD942C
CGD942C
CGD944C
CGD944C
CGD944C
CGD944C
CGD944C
FET
Agilent
BSR112
FET
Agilent
BSR113
FET
Agilent
BSR174
FET
Agilent
BSR175
FET
Agilent
BSR176
FET
Agilent
BSR177
FET
Agilent
CA901
CATV PPA
CATV PPA
MMIC
Agilent
CA901A
Agilent
CMM6004-SC
CMM6004-SC
CMM6004-SC
CMM6004-SC
CMY91
Agilent
Mimix
MMIC
Agilent
Mimix
MMIC
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Integra
Mimix
MMIC
HVC131
Infineon
Infineon
RFMD
MMIC
HVC132
CMY91
WB trs 1-4
MMIC
HVC200A
HVC200A
HVC202A
HVC202B
CXE1089Z
CXE1089Z
D10040180GT
D10040180GTH
D10040200GT
D10040200GTH
D10040200P1
D10040200PH1
D10040220GT
D10040220GTH
D10040230P1
D10040230PH1
D10040240GT
D10040240GTH
D10040250GT
D10040250GTH
D10040270GT
D10040270GTH
D10040270GTL
D8740180GT
D8740180GTH
D8740220GT
D8740220GTH
D8740240GT
D8740240GTH
D8740250GT
D8740250GTH
D8740270GT
BB187
Varicap
RFMD
MMIC
BB179
Varicap
RFMD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
BB179B
Varicap
RFMD
HVC300A
HVC300B
HVC306A
HVC306B
HVC355B
HVC359
BB182
Varicap
RFMD
BB182
Varicap
RFMD
BB187
Varicap
RFMD
BB187
Varicap
RFMD
BB145B
Varicap
RFMD
BB202
Varicap
RFMD
HVC363A
HVC376B
BB178
Varicap
RFMD
BB198
Varicap
RFMD
HVC376B
BB202
Varicap
RFMD
HVD132
BAP51-02
BAP65-03
BAP51-03
BB149
PIN diode
PIN diode
PIN diode
Varicap
RFMD
HVU131
RFMD
HVU132
RFMD
HVU202(A)
HVU202(A)
HVU300A
HVU307
RFMD
BB149A
Varicap
RFMD
BB152
Varicap
RFMD
BB148
Varicap
RFMD
HVU315
BB148
Varicap
RFMD
HVU316
BB131
Varicap
RFMD
HVU363A
HVU363A
HVU363B
IB0912L200
IB0912L30
IB0912L70
IB0912M210
BB148
Varicap
RFMD
BB153
Varicap
RFMD
BB148
Varicap
RFMD
BLA1011-200R
BLA1011-2
BLA1011-200
BLA0912-250
A&D
RFMD
Integra
A&D
RFMD
Integra
A&D
RFMD
Integra
A&D
NXP Semiconductors RF Manual 16th edition
111
Productꢀ
family
Productꢀ
family
Manufacturerꢀtype
Manufacturerꢀ
NXPꢀtype
Manufacturerꢀtype
Manufacturerꢀ
NXPꢀtype
IB0912M350
IB0912M500
IB0912M600
IB0912M70
IB1011S1000
IB1011S1500
IB1011S190
IB1011S250
IB1011S350
IB1011S70
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Integra
Agilent
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toshiba
Toko
BLA0912-250R
BLA6H0912-500
BLA1011-10
A&D
A&D
A&D
A&D
MA366
Panasonic
BB148
Varicap
MA368
Panasonic
BB131
Varicap
MA372
Panasonic
BB149
Varicap
BLL6H0514LS-130
MA372
Panasonic
BB149A
Varicap
BLA6G1011LS-200RG A&D
MA4CP101A
MA4P274-1141
MA4P275-1141
MA4P275CK-287
MA4P277-1141
MA4P278-287
MA4P789-1141
MA4P789ST-287
MAX19985A
MAX19995
MAX2634
Panasonic
BAP65-03
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
MMIC
BLA6H1011-600
BLA1011S-200
BLA1011S-200R
BLA6G1011-200R
BLA1011-300
BLL6H1214-500
BLL6G1214L-250
BLL6G1214LS-250
BLL1214-250R
BLL6H1214L-250
BLL1214-35
BLL1214-250
BLS7G2729LS-350P
BLS7G2729L-350P
BLS6G2731-6G
BLS6G2731S-130
BLS6G2731S-120
BLS6G2933S-130
BLS2933-100
BLS7G2933S-150
BLS7G3135LS-350P
BLS6G3135-20
BLS6G3135S-120
BLS6G3135-120
BLS6G3135S-20
BLS7G3135L-350P
BLF578XR
A&D
Panasonic
BAP51-03
A&D
Panasonic
BAP65-03
A&D
Panasonic
BAP65-05
A&D
Panasonic
BAP70-03
A&D
Panasonic
BAP70-03
IB1214M130
IB1214M150
IB1214M300
IB1214M32
A&D
Panasonic
BAP1321-03
BAP1321-04
BGX7220
A&D
Panasonic
A&D
MAXIM
A&D
MAXIM
BGX7221
MMIC
IB1214M375
IB1214M55
A&D
Maxim
BGU6102
MMIC
A&D
MAX2657
Maxim
BGU8007
MMIC
IB1214M6
A&D
MAX2658
Maxim
BGU7005
MMIC
IB2729M25
IB2729M5
A&D
MAX2659
Maxim
BGU7005
MMIC
A&D
MAX2667
Maxim
BGU8007
MMIC
IB2731M110
IB2731MH110
IB2731MH25
IB2931MH155
IB2931MH55
IB2934M100
IB3135MH100
IB3135MH20
IB3135MH45
IB3135MH5
IB3135MH65
IB3135MH75
IB450S300
A&D
MAX2687
Maxim
BGU7005
MMIC
A&D
MAX2694
Maxim
BGU7005
MMIC
A&D
MC7712
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Sanyo
BGY785A
CATV PPA
CATV PPA
CATV PPA
CATV PPA
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PD
CATV PD
CATV PPA
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
WB trs 5-7
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
A&D
A&D
MC7716
BGY787
A&D
MC7722
BGY785A
A&D
MC7726
BGY787
A&D
MC-7831
BGY885A
A&D
MC7831-HA
MC-7831-HA
MC-7832
BGY1085A
BGY1085A
BGY887
A&D
A&D
A&D
MC7832-HA
MC-7832-HA
MC-7833
CGY1041
A&D
CGY1041
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
A&D
BGY887B
IB450S500
BLF544
MC-7836
BGY887B
IDM165L650
IDM175CW300
IDM265L650
IDM30512CW100
IDM30512CW20
IDM30512CW50
IDM500CW120
IDM500CW150
IDM500CW200
IDM500CW300
IDM500CW80
ILD0506EL350
ILD0912M150HV
ILD0912M15HV
ILD0912M400HV
ILD0912M60
ILD1214M10
ILD1214M60
ILD2731M140
ILD2735M120
ILD2933M130
INA-51063
BLF1043
MC-7836
CGY1047
BLF369
MC-7846
CGD942C
CGD944C
BGY885A
BLF1046
MC-7847
BLF574XRS
BLF574
MC7852
MC7866
BGD816L
BLF574XR
MC-7882
BGD814
BLF572XR
MC-7883
CGD942C
CGD944C
CGD1042H
CGD1042Hi
CGD982HCi
CGD1042H
CGD1044Hi
CGD985HCi
CDG1044H
CGD1046Hi
CGD987HCi
CGD1044H
BFG424F
BLF572XRS
BLF573
MC-7884
MC-7891
BLF573S
MC7893
BLF571
MC7893
BLF988
MC-7893
BLL6H0514-25
BLU6H0410LS-600P
BLL6H0514L-130
BLU6H0410L-600P
BLL6H1214LS-250
BLL6H1214LS-500
BLS6G2731-120
BLS6G2735L-30
BLS6G2735LS-30
BGA2001
MC7894
A&D
MC7894
A&D
MC-7894
A&D
MC7896
A&D
MC7896
A&D
MC-7896
A&D
MCH4009
A&D
MD7IC18120GNR1
MD7IC18120NR1
MD7IC2050GNR1
MD7IC21100GNR1
MD7IC21100NBR1
MD7IC21100NR1
MD7IC2250GNR1
MD7IC2250NBR1
MD7IC2250NR1
MD7IC2755GNR1
MD7IC2755NR1
MD8IC970GNR1
MD8IC970NR1
MDS60L
Freescale
BLF6G20-180RN
BLF6G20-230PRN
BLF7G20LS-200
BLF6G22-45
BLF6G22L-40BN
BLF6G22LS-40BN
BLF6G22LS-100
BLF6G22LS-130
BLF6G22LS-180PN
BLF6G27-100
BLF6G27-135
BLF8G10LS-400PGV
BLF8G10L-300P
BLA1011S-200R
BGU7051
A&D
Freescale
MMIC
Freescale
JDP2S01E
BAP65-02
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
BS diode
PIN diode
FET
Freescale
JDP2S01U
BAP65-03
Freescale
JDP2S02AFS
JDP2S02AS
JDP2S02T
BAP51-02
Freescale
BAP51-03
Freescale
BAP63-02
Freescale
JDP2S04E
BAP50-02
Freescale
JDS2S03S
BA891
Freescale
KP2310R
BAP64-04W
BF1108
Freescale
KTK920*
KEC
Freescale
KTK920BT
KEC
BF1108
FET
Freescale
KTK920T
KEC
BF1108R
FET
Microsemi
KV1835E
Toko
BB199
Varicap
MMIC
MGA631P8
MGA632P8
MGA632P8
MHVIC915NR2
MHW10186N
MHW10236N
MHW10247AN
MHW10276N
MHW1224
Avago
MMIC
LTC5590
Linear Technology
Linear Technology
Linear Technology
Standard
Panasonic
Panasonic
Panasonic
Panasonic
Renesas Electronics
Panasonic
BGX7220
Avago
BGU7052
MMIC
LTC5591
BGX7221
MMIC
Avago
BGU7053
MMIC
LTC5592
BGX7221
MMIC
Freescale
BLF6G10LS-135RN
BGY1085A
CGY1043
Base station
CATV PP
CATV PP
CATV PD
CATV PP
CATV RA
CATV RA
CATV RA
MA2S077
BA277
BS diode
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Freescale
MA2S357
BB178
Freescale
MA2S357
BB187
Freescale
CGD1044H
CGY1047
MA2S372
BB179
Freescale
MA2S374
BB182
Freescale
BGY67
MA2SV01
BB202
MHW1244
Freescale
BGY67A
MA357
BB153
MHW1253LA
Freescale
BGY67A
112
NXP Semiconductors RF Manual 16th edition
Productꢀ
family
Productꢀ
family
Manufacturerꢀtype
Manufacturerꢀ
NXPꢀtype
Manufacturerꢀtype
Manufacturerꢀ
NXPꢀtype
MHW1254L
MHW1254LA
MHW1304L
MHW1304LA
MHW1304LAN
MHW1346
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
BGY68
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV RA
CATV PPA
CATV PPA
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PPA
CATV PPA
CATV PPA
CATV PPA/HG
CATV PPA/HG
CATV PPA/HG
CATV PPA/HG
CATV PPA/HG
CATV PPA
CATV PPA
CATV PP
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PP
CATV PD
CATV PD
CATV PPA
CATV PD
CATV PPA
CATV PPA
CATV PP
CATV PPA
CATV PPA
CATV PP
CATV PPA
CATV PPA
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PD
CATV PPA/HG
CATV PPA
FET
MMBR931L
Freescale
Freescale
Freescale
Freescale
Freescale
ONSemicond.
ONSemicond.
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
BFT25A
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
Varicap
BGY68
MMBR941BL
PBR941
BGY68
MMBR941L
PBR941
BGY68
MMBR951AL
PBR951
BGY68
MMBR951L
PBR951
BGY67A
MMBV105GLT1
MMBV109LT1
BB156
MHW1353LA
MHW1354LA
MHW7182B
MHW7182C
MHW7185C2
MHW7185CL
MHW7205C
MHW7205CL
MHW7205CLN
MHW7222
BGY67A
BB148
Varicap
BGY68
MMG2001NT1
BGD816L
CATV PD
CATV PD
MMIC
BGY785A
BGY785A
BGD712
MMG2001T1
BGD816L
MMG3004NT1
MMG3004NT1
MMG3004NT1
MMG3014
BGA7027
BGA7127
MMIC
BGD712
BGA7127
MMIC
BGD714
BGA7024
MMIC
BGD714
MMG3014
BGA7124
MMIC
BGD714
MMG3014
BGA7124
MMIC
BGY787
MMG3014
BGA7204
MMIC
MHW7222A
MHW7222B
MHW7242A
MHW7272A
MHW7292
BGY787
MRF282ZR1
BLF7G20LS-250P
PRF957
Base station
WB trs 1-4
WB trs 1-4
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
A&D
BGY787
MRF577
BGE787B
BGE787B
BGE787B
BGE787B
BGE787B
BGY885A
BGY885A
BGY885A
BGD814
MRF5811L
BFG93A/X
MRF5P21045NR1
MRF5S9100NBR1
MRF5S9101NBR1
MRF5S9150HR3
MRF5S9150HSR3
MRF6P24190HR6
MRF6P24190HR6
MRF6P27160HR5
MRF6P27160HR5
MRF6P27160HR6
MRF6P27160HR6
MRF6S18060NR1
MRF6S18060NR1
MRF6S20010GNR1
MRF6S20010NR1
MRF6S21050LR3
MRF6S21050LSR3
MRF6S21100HR3
MRF6S21140HR3
MRF6S21190HSR3
MRF6S24140HR3
MRF6S24140HR3
MRF6S24140HSR3
MRF6S24140HSR3
MRF6S27015GNR1
MRF6S27015NR1
MRF6S27085HR3
MRF6S27085HR3
MRF6S27085HR5
MRF6S27085HSR3
MRF6S27085HSR5
MRF6V10010NR4
MRF6V12250HR3
MRF6V12250HR5
MRF6V12250HSR3
MRF6V12500HR5
MRF6V12500HSR3
MRF6V12500HSR5
MRF6V13250HR3
MRF6V13250HR3
MRF6V13250HR3
MRF6V13250HR3
MRF6V13250HR5
MRF6V13250HR5
MRF6V13250HR5
MRF6V13250HSR3
MRF6V13250HSR3
MRF6V13250HSR3
MRF6V13250HSR5
MRF6V13250HSR5
MRF6V13250HSR5
MRF6V14300HR3
MRF6V14300HR5
MRF6V14300HSR3
MRF6V14300HSR3
MRF6V14300HSR5
MRF6V14300HSR5
MRF6V2010NBR1
BLF6G22LS-180RN
BLF6G10-135RN
BLF6G10LS-200RN
BLF6G10-160RN
BLF6G10-200RN
BLF6G27-10G
BLF7G24LS-160P
BLF7G27L-150P
BLF8G27LS-140
BLF7G27L-90P
BLF8G27LS-140G
BLF6G20-110
BLF6G20-180PN
BLF6G22LS-75
BLF6G22S-45
BLF7G22L-130
BLF7G22L-160
BLF7G22LS-130
BLF7G22LS-160
BLF8G22LS-200GV
BLF7G24L-100
BLF7G27L-75P
BLF7G24L-140
BLF7G27LS-75P
BLF7G22LS-250P
BLF6G27-10
MHW7292A
MHW7292AN
MHW8182B
MHW8182C
MHW8182CN
MHW8185
MHW8185L
MHW8188AN
MHW8205
BGD812
CGD942C
BGD814
MHW820L
BGD814
MHW8222BN
MHW8227A
MHW8227AN
MHW8247A
MHW8247AN
MHW8292
BGY887
CGD942C
CGD942C
CGD944C
CGD944C
BGY887B
BGY888
MHW8342
MHW8342N
MHW9182B
MHW9182C
MHW9182CN
MHW9186
CGY888C
BGY1085A
BGY1085A
BGY1085A
BGY885A
BGY885A
CGD942C
CGD942C
CGD942C
CGD942C
CGD1042
CGD944C
CGD944C
CGD944C
CGD944C
BGD712
MHW9186A
MHW9187N
MHW9188AN
MHW9188N
MHW9227AN
MHW9242A
MHW9247
BLF7G27LS-100
BLF8G27LS-200GV
BLF8G27LS-200PGV
BLF8G27LS-280PGV
BLF7G27L-135
BLA1011-200R
BLA0912-250
BLA0912-250R
BLA6H0912-500
BLA1011-10
MHW9247A
MHW9247AN
MHW9247N
MHWJ7185A
MHWJ7205A
MHWJ7292
MHWJ9182
MMBF4391
MMBF4392
MMBF4393
MMBF4860
MMBF5484
MMBFJ113
A&D
A&D
A&D
BGD714
A&D
BGE787B
BGY1085A
PMBF4391
PMBF4392
PMBF4393
PMBFJ112
BFR31
BLA1011-2
A&D
BLA1011-200
BLF6G15L-500H
A&D
Base station
FET
BLF6G15LS-250PBRN Base station
FET
BLL6G1214LS-250
BLL6H1214LS-500
BLF6G15LS-500H
BLF6G15LS-40RN
BLL6H1214-500
BLF6G13L-250P
BLF7G20L-90P
BLL6H1214L-250
BLF6G13LS-250P
BLF7G20LS-90P
BLL6H1214LS-250
BLL1214-250
A&D
FET
A&D
FET
Base station
Base station
A&D
PMBFJ113
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
PMBFJ308
PMBFJ309
PMBFJ310
PMBFJ310
BFS17
FET
MMBFJ174
FET
MMBFJ175
FET
Base station
Base station
A&D
MMBFJ176
FET
MMBFJ177
MMBFJ308
MMBFJ309
MMBFJ310
MMBFU310
MMBR5031L
MMBR5179L
MMBR571L
MMBR901L
MMBR911L
MMBR920L
FET
FET
Base station
Base station
A&D
FET
FET
FET
A&D
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
BLL1214-250R
A&D
BFS17A
BLF7G15LS-200
BLL1214-35
Base station
A&D
PBR951
BFR92A
BLF7G15LS-300P
BLL6G1214L-250
BLF573S
Base station
A&D
BFR93A
BFR93A
Broadcast
NXP Semiconductors RF Manual 16th edition
113
Productꢀ
family
Productꢀ
family
Manufacturerꢀtype
Manufacturerꢀ
NXPꢀtype
Manufacturerꢀtype
Manufacturerꢀ
NXPꢀtype
MRF6V2010NBR5
MRF6V2010NR1
MRF6V2150NBR1
MRF6V2150NBR5
MRF6V2150NR1
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
BLF574
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
A&D
MRF8P9040NBR1
MRF8P9040NR1
MRF8S18120HR3
MRF8S18120HR5
MRF8S18120HSR3
MRF8S18120HSR5
MRF8S18260HR5
MRF8S18260HR6
MRF8S18260HSR5
MRF8S18260HSR6
MRF8S23120HR3
MRF8S23120HR5
MRF8S23120HSR3
MRF8S23120HSR5
MRF8S26060HR3
MRF8S26060HSR5
MRF8S8260HR3
MRF8S8260HR5
MRF8S8260HSR3
MRF8S8260HSR5
MRF917
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Toshiba
BLF6G10L-260PBM
BLF6G10L-260PRN
BLF6G20LS-180RN
BLF6G20LS-75
BLF6G20S-230PRN
BLF6G20S-45
BLF7G20LS-140P
BLF7G20LS-260A
BLF7G21L-160P
BLF7G21LS-160
BLF6G22LS-40P
BLF7G22L-200
BLF7G22L-250P
BLF7G22LS-200
BLF7G27L-200PB
BLF8G27LS-140V
BLF8G10L-160V
BLF8G10LS-160V
BLF8G10LS-200GV
BLF8G10LS-270GV
BFQ67W
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
WB trs 1-4
Broadcast
Broadcast
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Broadcast
Broadcast
Broadcast
A&D
BLF574XR
BLF574XRS
BLF578
BLF578XR
MRF6V3090NBR1
MRF6V3090NBR5
MRF6V3090NR1
MRF6V3090NR5
MRF6VP11KHR5
BLF647PS
BLF202
BLF242
BLF244
BLF145
MRF6VP11KHR6
BLF147
MRF6VP21KHR5
MRF6VP21KHR6
MRF6VP2600HR5
MRF6VP3091NBR1
MRF6VP3091NBR5
MRF6VP3091NR1
MRF6VP3091NR5
MRF6VP3450HR5
MRF6VP3450HR6
MRF6VP3450HSR5
MRF6VP3450HSR6
MRF6VP41KHR5
BLF175
BLF177
BLF647P
BLF245
BLF245B
BLF246
BLF878
BLF879P
BLF884P
BLF884PS
BLF888
MRF927
BFS25A
BLF248
MRF9411L
BFG520/X
MRF6VP41KHR6
BLF369
MRF947
BFS520
MRF6VP41KHR7
BLF571
MRF947A
PRF947
MRF6VP41KHSR5
MRF6VP41KHSR6
MRF6VP41KHSR7
MRF7P20040HR3
MRF7P20040HSR3
MRF7S15100HR3
MRF7S15100HSR3
MRF7S15100HSR5
MRF7S18170HSR3
MRF7S21080HSR3
MRF7S21110HR3
MRF7S21110HSR3
MRF7S27130HR3
MRF7S27130HSR3
MRF7S35015HSR3
MRF7S35120HSR3
MRF7S38075HR3
MRF8P18265HR5
MRF8P18265HR6
MRF8P18265HSR5
MRF8P18265HSR6
MRF8P20160HR3
MRF8P20160HR5
MRF8P20160HSR3
MRF8P20160HSR5
MRF8P20161HSR3
MRF8P20161HSR5
MRF8P23080HR3
MRF8P23080HR5
MRF8P23080HSR3
MRF8P23080HSR5
MRF8P23160WHR3
MRF8P23160WHR5
MRF8P23160WHSR3
MRF8P23160WHSR5
MRF8P26080HR3
MRF8P26080HR5
MRF8P26080HSR3
MRF8P26080HSR5
MRF8P29300HR5
MRF8P29300HR5
MRF8P29300HR6
MRF8P29300HR6
MRF8P29300HSR5
MRF8P29300HSR5
MRF8P29300HSR6
MRF8P29300HSR6
MRF8P8300HR5
MRF8P8300HR6
MRF8P8300HSR5
MRF8P8300HSR6
MRF8P9040GNR1
BLF572XR
MRF9511L
BFG540/X
BLF572XRS
MRF957
PRF957
BLF573
MRFE6P3300HR3
MRFE6P3300HR5
MRFE6P9220HR3
MRFE6S8046GNR1
MRFE6S8046NR1
MRFE6S9125NBR1
MRFE6S9125NR1
MRFE6S9160HSR3
MRFE6S9205HSR3
MRFE6VP8600HR5
MRFE6VP8600HR6
MRFE6VP8600HSR5
MRFG35003ANT1
MS1078
BLF888A
BLF6G22-180PN
BLF6G22-180RN
BLF6G15L-250PBRN
BLF6G15L-40BRN
BLF6G15L-40RN
BLF6G20-40
BLF8G22LS-270GV
BLF8G22LS-400PGV
BLM7G22S-60PB
BLF6G27-45
BLF6G27-75
BLS6G3135S-20
BLS7G3135L-350P
BLF6G38-10
BLF6G20-45
BLF6G20-75
BLF6G20LS-110
BLF6G20LS-140
BLF8G20LS-270GV
BLF8G20LS-270PGV
BLF7G20L-200
BLF7G20L-250P
BLF8G20L-200V
BLF8G20LS-200V
BLM7G22S-60PBG
BLD6G21L-50
BLD6G21LS-50
BLM6G22-30
BLM6G22-30G
BLD6G22L-50
BLD6G22LS-50
BLF6G22L-40P
BLF6G27L-40P
BLF6G27L-50BN
BLF6G27LS-100
BLF6G27LS-135
BLF7G27LS-140
BLS6G2731-120
BLF7G27LS-150P
BLS6G2731-6G
BLF7G27LS-90P
BLS6G2731S-120
BLF7G27LS-90PG
BLS6G2731S-130
BLF6G10LS-160RN
BLF6G10LS-260PRN
BLF6G10S-45
BLF6H10L-160
BLF6G10-45
BLF578XRS
BLF7G10LS-250
BLF8G10LS-300P
BLF7G10L-250
BLF6H10LS-160
BLF8G10L-160
BLM6G10-30
BLM6G10-30G
BLF888AS
BLF888B
BLF888BS
BLU6H0410L-600P
BLF145
A&D
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
A&D
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
A&D
MS1281
BLF177
MS1336
BLF175
MS1337
BLF147
MS1504
BLF248
MS1505
BLF178XRS
MS1506
BLF178XR
MS2267
BLA1011-10
MS2272
BLA6H0912-500
BFG424W
A&D
MT4S200T
WB trs 5-7
WB trs 5-7
WB trs 5-7
Varicap
MT4S200U
Toshiba
BFG425W
MT4S34U
Toshiba
BFG410W
MV2109G
ONSemicond.
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Freescale
Renesas Electronics
Renesas Electronics
Renesas Electronics
BB182LX
MW6S004NT1
MW6S004NT1
MW7IC008NT1
MW7IC2020NT1
MW7IC2425GNR1
MW7IC2425GNR1
MW7IC2425NBR1
MW7IC2425NBR1
MW7IC2425NR1
MW7IC2425NR1
MW7IC2725GNR1
MW7IC2725NBR1
MW7IC2725NR1
MW7IC2750GNR1
MW7IC2750NBR1
MW7IC2750NR1
MW7IC3825GNR1
MW7IC3825NBR1
MW7IC3825NR1
MW7IC915NT1
MWE6IC9100NBR1
NESG2021M05
NESG2031M05
NESG2101M05
BLF6G21-10G
BLF1043
Base station
Broadcast
Broadcast
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
WB trs 5-7
WB trs 5-7
WB trs 5-7
BLF988
BLF7G21LS-160P
BLF7G24L-160P
BLF8G24L-200P
BLF7G24LS-100
BLF8G24LS-200P
BLF7G24LS-140
BLS7G2325L-105
BLF6G27LS-40P
BLF6G27LS-50BN
BLF6G27LS-75
BLF6G27S-45
BLF7G27L-100
BLF7G27L-140
BLF6G38-100
BLF6G38-10G
BLF6G38-25
BLF6G10L-40BRN
BLF8G10LS-160
BFU610F
Base station
A&D
Base station
A&D
Base station
A&D
Base station
Base station
Base station
Base station
Base station
BFU630F
BFU660F
114
NXP Semiconductors RF Manual 16th edition
Productꢀ
family
Productꢀ
family
Manufacturerꢀtype
Manufacturerꢀ
NXPꢀtype
Manufacturerꢀtype
Manufacturerꢀ
NXPꢀtype
NESG2101M05
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
JRC
BFU760F
WB trs 5-7
R2005240
R2005240
R2005240P12
R2005350L
RF3826
Standard
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
Rohm
BGY67A
CATV RA
CATV RA
CATV RA
CATV RA
Base station
MMIC
NESG2101M05
BFU790F
WB trs 5-7
BGY67A
NESG3031M05
BFU730F
WB trs 5-7
BGY67A
NESG3032M14
BFU725F
WB trs 5-7
BGR269
NJG1140KA1
BGU7044
MMIC
BLF7G24L-100
BGU7051
PRF947B
Motorola
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
Infineon
RFMD
PRF947
WB trs 1-4
RF3863
PRF947B
PRF947
WB trs 1-4
RF3863
BGU7052
MMIC
PTF 080101S - 10 W
PTF 081301E
BLF8G10L-300P
BLF8G10LS-300P
BLF7G10L-250
BLF1046
Base station
Base station
Base station
Broadcast
RF3863
BGU7053
MMIC
RF3928
BLS7G2933S-150
BLS6G2933S-130
BLF6G38-10
BLS6G3135-120
BLF6G38-100
BLF6G38-10G
BLF6G38-25
BGX721x
A&D
PTF 081301F
RF3928B
A&D
PTF 140451E
RF3931
Base station
A&D
PTF 140451F
BLF145
Broadcast
RF3931
PTF 141501E - 150 W
PTFA 041501E
BLF147
Broadcast
RF3932
Base station
Base station
Base station
MMIC
BLF6G10LS-200RN
BLF6G10-135RN
BLF6G21-10G
BLF1043
Base station
Base station
Base station
Broadcast
RF3933
PTFA 041501F
RF3934
PTFA 043002E - 300 W
PTFA 043002E - 300 W
PTFA 070601E - 60 W
PTFA 070601F - 60 W
PTFA 071701E - 170 W
PTFA 071701F - 170 W
PTFA 072401EL - 240 W
PTFA 072401FL - 240 W
PTFA 072401FL - 240 W
PTFA 080551E - 55 W
PTFA 080551F - 55 W
PTFA 081501E - 150 W
PTFA 081501F - 150 W
PTFA 082201E - 220 W
PTFA 082201F - 220 W
PTFA 091201E - 120 W
PTFA 091201F - 120 W
PTFA 142401EL - 240 W
PTFA 142401FL - 240 W
PTFA 210601E - 60 W
PTFA 210601F - 60 W
PTFA 210701E - 70 W
PTFA 210701F - 70 W
PTFA 211801E - 180 W
PTFA 211801F - 180 W
PTFA 212001E - 200 W
PTFA 212001F - 200 W
PTFA 240451E - 45 W
PTFA 241301E - 130 W
PTFA 241301F - 130 W
PTFA 260451E - 45 W
PTFA 261301E - 130 W
PTFA 261301F - 130 W
PTFB 082817 FH - 250 W
PTFB 082817 FH - 250 W
PTFB 091507FH - 150 W
PTFB 093608FV - 360 W
PTFB 210801FA - 80 W
PTFB 211501E - 150 W
PTFB 211501F - 150 W
PTFB 211503EL - 150 W
PTFB 211503FL - 150 W
PTFB 211803EL - 180 W
PTFB 211803FL - 180 W
PTFB 212503EL - 240 W
PTFB 212503FL - 240 W
PTFB 213004F - 300 W
PTFB 241402F - 2x70W
PTFB 241402F - 2x70W
PTMA 080152M - 20 W
PTMA 080302M - 30 W
PTMA 080304M - 2 X 15 W
PTMA 180402M - 40 W
PTMA 210152M - 20 W
PTMA 210452EL - 45 W
PTMA 210452FL - 45 W
R0605250L
RFFC2072
RFG1M09090
RFG1M09180
RFG1M20090
RFG1M20180
RFHA1000
RFHA1003
RFHA1006
RFHA3942
RN142G
BLF6G10-200RN
BLF6G10-45
BLF6G20-110
BLF6G20-180PN
BLF6G10-135RN
BLF6G10LS-200RN
BLF6G10-160RN
BLS7G3135LS-350P
BAP1321-03
BAP1321-02
BAP51LX
Base station
Base station
Base station
Base station
Base station
Base station
Base station
A&D
BLF6G10L-260PRN
BLF6G10L-40BRN
BLF6G10LS-135RN
BLF6G10LS-160RN
BLF6G10LS-260PRN
BLF6G10S-45
BLF6H10L-160
BLF6H10LS-160
BLF8G10L-160
BLF8G10L-160V
BLF8G10LS-160V
BLF8G10LS-200GV
BLF8G10LS-270GV
BLM6G10-30
BLM6G10-30G
BLF175
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Broadcast
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
FET
RN142S
Rohm
RN242CS
RN731V
Rohm
Rohm
BAP50-03
BAP50-04
BAP50-04W
CGY1041
RN739D
Rohm
RN739F
Rohm
S10040200P
S10040220GT
S10040220P
S10040230GT
S10040240P
S10040280GT
S10040340
S595T
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
Vishay
Vishay
Vishay
Standard
Standard
RFMD
Standard
RFMD
RFMD
Standard
RFMD
RFMD
Standard
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
RFMD
Microsemi
Microsemi
Microsemi
Microsemi
AUK
CGY1041
CGY1041
BLF177
Broadcast
CGY1043
BLF6G20-40
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
Base station
CATV RA
CGY1043
BLF6G20-45
CGY1047
BLF6G20-75
CGY1034
BLF6G20LS-110
BLF6G20LS-140
BLF6G20LS-180RN
BLF6G20LS-75
BLF6G20S-230PRN
BLF6G27-75
BF1105
S595TR
BF1105R
FET
S595TRW
S7540185
S7540215
S8740180GT
S8740190
S8740190
S8740200P
S8740220
S8740220GT
S8740220P
S8740230
S8740240GT
S8740240P
S8740240P12
S8740260GT
S8740280GT
S8740340
S8740340PT
SD1013
BF1105WR
BGY785A
BGY787
FET
CATV PPA
CATV PPA
CATV PP
CATV PD
CATV PP
CATV PP
CATV PD
CATV PP
CATV PP
CATV PD
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
CATV PP
Broadcast
Broadcast
Broadcast
A&D
BGY885A
BGD812
BLF6G27L-40P
BLF6G27L-50BN
BLF6G27LS-100
BLF6G27LS-135
BLF6G27LS-40P
BLF6G10L-260PBM
BLF8G10LS-400PGV
BLF7G10LS-250
BLF8G10LS-160
BLF6G20S-45
BLF7G20LS-140P
BLF7G20LS-260A
BLF7G21L-160P
BLF7G21LS-160
BLF7G21LS-160P
BLF8G20L-200V
BLF8G20LS-200V
BLF8G20LS-270GV
BLF8G20LS-270PGV
BLF7G24L-140
BLF6G27-45
BGY885A
BGY887
BGD814
BGY887
BGY887
BGD816L
BGY887
BGY887
BGY887
CGY887A
CGY887B
CGY888C
CGY888C
BLF178P
SD1013-03
SD1014-06
SD1526-01
SDV701Q
SDV704Q
SDV705Q
SGA8343Z
SKY65048
SKY65066
SKY65084
SMA3101
SMA3101
SMA3103
SMA3103
SMA3107
SMA3107
SMA3109
SMA3109
SMA3111
BLF174XRS
BLF174XR
BLA0912-250R
BB179
Varicap
AUK
BB178
Varicap
AUK
BB182
Varicap
BLF6G10-160RN
BLF6G10-200RN
BLF6G10-45
Sirenza
Skyworks
Skyworks
Skyworks
Sanyo
BFG425W
BGU7051
WB trs 5-7
MMIC
BGU7053
MMIC
BLF6G20-110
BLF6G20-180PN
BLF6G20-180RN
BLF6G20-230PRN
BGS67A
BGU7052
MMIC
BGA2851
MMIC
Sanyo
BGA2851
MMIC
Sanyo
BGA2867
MMIC
Sanyo
BGA2867
MMIC
R0605250L
Standard
Standard
RFMD
BGY66B
CATV RA
Sanyo
BGA2803
BGA2803
BGA2817
MMIC
R0605300L
BGY68
CATV RA
Sanyo
MMIC
R0605300L
BGY68
CATV RA
Sanyo
MMIC
R1005250L
RFMD
BGY66B
CATV RA
Sanyo
BGA2817
MMIC
R2005200P12
RFMD
BGY67
CATV RA
Sanyo
BGA2851
MMIC
NXP Semiconductors RF Manual 16th edition
115
Productꢀ
family
Productꢀ
family
Manufacturerꢀtype
Manufacturerꢀ
NXPꢀtype
Manufacturerꢀtype
Manufacturerꢀ
NXPꢀtype
SMA3111
Sanyo
BGA2851
MMIC
MMIC
MMIC
MMIC
MMIC
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
PIN diode
Varicap
Varicap
FET
TMPF4391
TMPF4392
TMPF4393
TMPFB246A
TMPFB246B
TMPFB246C
TMPFJ111
TMPFJ112
TMPFJ113
TMPFJ174
TMPFJ175
TMPFJ176
TMPFJ177
TPR400
Standard
PMBF4391
PMBF4392
PMBF4393
BSR56
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
FET
A&D
A&D
A&D
A&D
A&D
SMA3113
Sanyo
BGA2869
BGA2869
BGA2869
BGA2869
BAP50-05
BAP50-04
BAP50-03
BAP50-05W
BAP50-04W
BAP50-02
BAP70-03
BAP70-03
BAP70-03
BAP70-03
BAP65-05
BAP65-03
BAP65-05W
BAP1321-03
BAP1321-04
BAP1321-03
BAP1321-04
BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB181
Standard
SMA3113
Sanyo
Standard
SMA3117
Sanyo
Standard
SMA3117
Sanyo
Standard
BSR57
SMP1302-004
SMP1302-005
SMP1302-011
SMP1302-074
SMP1302-075
SMP1302-079
SMP1304-001
SMP1304-011
SMP1307-001
SMP1307-011
SMP1320-004
SMP1320-011
SMP1320-074
SMP1321-001
SMP1321-005
SMP1321-011
SMP1321-075
SMP1321-079
SMP1322-004
SMP1322-011
SMP1322-074
SMP1322-079
SMP1340-011
SMP1340-079
SMP1352-011
SMP1352-079
SMV1235-004
SMV1236-004
SST111
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Skyworks
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Standard
Sanyo
Standard
BSR58
Standard
PMBFJ111
PMBFJ112
PMBFJ113
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
BLA1011-2
BLA1011-200
BLA6G1011-200R
BLL1214-250
BLA6H1011-600
Standard
Standard
Standard
Standard
Standard
Standard
Microsemi
TPR400
Microsemi
TPR400A
TPR500
Microsemi
Microsemi
TPR500A
TPR700
Microsemi
Microsemi
BLA6G1011LS-200RG A&D
TRF370315
TRF370417
TRF3705
TI
BGX710x
BGX710x
BGX710x
BF1102
MMIC
TI
MMIC
TI
MMIC
TSDF54040
TSDF54040-GS08
TSDF54040X-GS08
TSDF54040XR-GS08
uPC2709
Vishay
FET
Vishay
BF1102
FET
Vishay
BF1102
FET
Vishay
BF1102R
BGA2709
BGA2711
BGA2712
BGA2001
BGA2001
BGA2748
BGA2771
BGA2851
BGA2851
BGA2867
BGA2867
BGA2851
BGA2851
BGA2869
BGA2869
BGA2802
BGA2802
BGA2817
BGA2817
BGA2022
BGU7007
BGU8007
BGU7045
BGU7045
BLF888B
BLF888AS
BLF888A
BLF888
FET
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Renesas Electronics
Microsemi
MMIC
uPC2711
MMIC
uPC2712
MMIC
uPC2745
MMIC
uPC2746
MMIC
uPC2748
MMIC
BB156
uPC2771
MMIC
PMBFJ111
PMBFJ112
PMBFJ113
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
BFT46
uPC3224
MMIC
SST112
FET
uPC3224
MMIC
SST113
FET
uPC3226
MMIC
SST174
FET
uPC3226
MMIC
SST175
FET
uPC3227
MMIC
SST176
FET
uPC3227
MMIC
SST177
FET
uPC3232
MMIC
SST201
FET
uPC3232
MMIC
SST202
BFR31
FET
uPC3240
MMIC
SST203
BFR30
FET
uPC3240
MMIC
SST308
PMBFJ308
PMBFJ309
PMBFJ310
PMBF4391
PMBF4392
PMBF4393
BSR56
FET
uPC3241
MMIC
SST309
FET
uPC3241
MMIC
SST310
FET
uPC8112
MMIC
SST4391
FET
UPC8230TU
UPC8236T6N
uPD5740T6N
uPD5756T6N
UTV005
MMIC
SST4392
FET
MMIC
SST4393
FET
MMIC
SST4856
FET
MMIC
SST4857
BSR57
FET
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
Broadcast
SST4859
BSR56
FET
UTV005P
UTV010
Microsemi
SST4860
BSR57
FET
Microsemi
SST4861
BSR58
FET
UTV020
Microsemi
SVC201SPA
SXA-389B
SXA-389B
SXA-389B
SXA-389B
SXB-4089
BB187
Varicap
MMIC
MMIC
MMIC
MMIC
MMIC
MMIC
Base station
A&D
UTV040
Microsemi
BLF884PS
BLF884P
BLF879P
BLF878
RFMD
BGA7024
UTV080
Microsemi
RFMD
BGA7124
UTV120
Microsemi
RFMD
BGA7124
UTV200
Microsemi
RFMD
BGA7204
BGA7027
UTV8100B
Microsemi
BLF861A
RFMD
SXB-4089
RFMD
BGA7127
T1G4005528-FS
T1G4005528-FS
T1G4005528-FS
T1L2003028-SP
T1P2701012-SP
TAN150
Triquint
BLF6G38-25
BLS6G3135-120
BLS6G3135-20
BLL6H0514L-130
BLS6G2731-120
BLS7G2325L-105
BLL6H1214LS-500
BLL6H1214LS-250
BLL6H1214L-250
BLL6H1214-500
BF1204
Triquint
Triquint
A&D
Triquint
A&D
Triquint
A&D
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Renesas Electronics
AUK
A&D
TAN250A
A&D
TAN300
A&D
TAN350
A&D
TAN75A
A&D
TBB1016
FET
TMF3201J
TMF3202Z
TMPF4091
TMPF4092
TMPF4093
BF1204
FET
AUK
BF1202WR
PMBF4391
PMBF4392
PMBF4393
FET
Standard
Standard
Standard
FET
FET
FET
116
NXP Semiconductors RF Manual 16th edition
5.2
Cross-references: NXP discontinued types versus NXP replacement types
In alphabetical order of manufacturer discontinued type
Abbreviations:
BS diode
CATV
Band switch diode
Community antenna television system
Field effect transistor
Varicap diode
FET
Varicap
WB trs
RFP trs
Wideband transistor
RF Power transistor
NXPꢀdiscontinuedꢀtype
ProductꢀfamilyꢀNXP
ReplacementꢀtypeꢀNXP
NXPꢀdiscontinuedꢀtype
ProductꢀfamilyꢀNXP
ReplacementꢀtypeꢀNXP
BA277-01
BA278
BA792
BAP142L
BAP51-01
BAP51L
BAP55L
BB132
BB145
BB145B-01
BB151
BB157
BB178L
BB179BL
BB179L
BB181LX
BB182B
BB182LX
BB187L
BB190
BB202LX
BB804
BBY42
BS diode
BS diode
BS diode
PIN diode
PIN diode
PIN diode
PIN diode
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
Varicap
FET
BA277
BA277
BA591
BFG92A/XR
BFG93A/XR
BFQ34/01
BFR92
BFR92AR
BFR92AT
BFR93
BFR93AT
BFR93R
BFU510
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
WB trs
WB trs
CATV
CATV
CATV
CATV
CATV
CATV
BFG92A/X
BFG93A/X
BFG35
BFR92A
BFR92A
BFR92AW
BFR92A
BFR93AW
BFR93A
BFU725F/N1
BFU725F/N1
BFU725F/N1
BGA2031/1
BGD712
BGD712
BGD712
BGD712
BGD712
BGD712
BGD714
BGD714
BGD812
BAP142LX
BAP51LX
BAP51LX
BAP55LX
BB152
BB145B
BB145B
BB135
BFU540
BFU725F
BGA2031
BGD502
BB187
BB178LX
BB179BLX
BB179LX
BB181
BB182
BB182
BB187LX
BB149
BB202
BB207
BBY40
BGD602D
BGD702
BGD702D
BGD702D/08
BGD702N
BGD704
BGD704N
BGD802
BGD802N
BGD802N/07
BGD804
BGD804N
BGD804N/02
BGD902
BGD902L
BGD904
BGD812
BGD812
BGD814
BGD814
BGD814
BGD812
BGD812
BGD814
BF1101
BF1211
BF1101R
BF1101WR
BF1203
FET
FET
FET
FET
FET
FET
FET
FET
BF1211R
BF1211WR
BF1203
BF1210
BF1205
BF1205C
BF1206F
BF245A
BF245B
BF245C
BF689K
BF763
BF851A
BF851C
BF992/01
BFC505
BFC520
BFET505
BFET520
BFG17A
BF1210
BF1208
BF545A
BF545B
BF545C
BFS17
BGD904L
BGD906
BGE788
BGD814
CGD942C
BGE788C
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO827/SC0
BGO807C/FCO
BGO807CE/SCO
BGO807CE/FCO
BGO807CE/SCO
BGO827/SC0
BGO827/SC0
BGO827/SC0
BFG35
FET
WB trs
WB trs
FET
FET
FET
BGE847BO/FC
BGE847BO/FC0
BGE847BO/FC1
BGE847BO/SC
BGE847BO/SC0
BGE887BO/FC
BGE887BO/FC1
BGE887BO/SC
BGO807C
BGO807CE
BGO827
BGO827/SCO
BGO847/FC0
BGO847/FC01
BGO847/SC0
BGQ34/01
BGU2003
BFS17
BF861A
BF861C
BF992
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
WB trs
BFM505
BFM520
BFM505
BFM520
BFS17A
BFG198
BFG198
BFG25AW/X
BFG410W
BFG425W
BFG505/X
BFG505
BFG520W/X
BFG590/X
BFG590
BFG590
BFG67
BFG197
BFG197/X
BFG25AW/XR
BFG410W/CA
BFG425W/CA
BFG505/XR
BFG505W/XR
BFG520W/XR
BFG590/XR
BFG590W
BFG590W/XR
BFG67/XR
BFG92A
BGA2003
BGX885N
BGY1085A
BGY785A
BGY787
BGX885/02
BGY1085A/07
BGY585A
BGY587
BGY587B
BGE787B
BGY588C
BFG92A/X
BGY588N
NXP Semiconductors RF Manual 16th edition
117
NXPꢀdiscontinuedꢀtype
ProductꢀfamilyꢀNXP
ReplacementꢀtypeꢀNXP
NXPꢀdiscontinuedꢀtype
ProductꢀfamilyꢀNXP
ReplacementꢀtypeꢀNXP
BGY66B/04
BGY67/04
BGY67/09
BGY67/14
BGY67/19
BGY67A/04
BGY67A/14
BGY68/01
BGY685A
BGY685AD
BGY685AL
BGY687
BGY687B
BGY687B/02
BGY785A/07
BGY785A/09
BGY785AD
BGY785AD/06
BGY785AD/8M
BGY787/02
BGY787/07
BGY787/09
BGY847BO/SC
BGY883
BGY887/02
BGY887BO/SC
BLC6G22-100
BLC6G22-100
BLF1822-10
BLF2043
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
CATV
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
BGY66B
BGY67
BGY67
BGY67
BGY67
BGY67A
BGY67A
BGY68
BGY785A
BGY785A
BGY785A
BGY787
BGE787B
BGE787B
BGY785A
BGY785A
BGY785A
BGY785A
BGY885A
BGY787
BGY787
BGY787
BGO827/SC0
BGY885A
BGY887
BGO827/SC0
BLF6G22-100
BLF6G22LS-100
BLF6G21-10G
BLF6G21-10G
BLF6G20-45BLF6G22-45
BLF6G22-45
BLF6G10LS-160RN
BLF6G10LS-160RN
BLF6G10LS-135RN
BLF6G10LS-160RN
BLF6G10-200RN
BLF7G20LS-200
BLF6G20-45
BLF7G20LS-250P
BLF7G22LS-200
BLF6G22LS-180PN
BLF6G22LS-75
BLF6G27-10
BLF6G27-10
BLF6G27-135
BLF6G27LS-135
BLF6G27LS-135
BLF6G27LS-75S
BLF6G27LS-75S
BLF6G38-10
BLF6G38-10
BLS2731-110
BLS2731-110T
BLS2731-20
BLS2731-50
CGD1042
CGD1044
CGD914
CGY887A
CGY887B
GD923
J108
J109
J110
J111
J112
J113
J174
J175
J176
J177
OM7650
OM7670
ON4831-2
ON4876
ON4890
ON4990
PMBT3640/AT
PN4392
PN4393
TFF1004HN
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
RFP trs
CATV
CATV
CATV
CATV
CATV
CATV
FET
BLF7G22LS-200
BLF7G22LS-100
BLF6G27-10G
BLF6G27-10G
BLF7G27L-135
BLF7G27LS-140
BLF7G27LS-140
BLF6G27LS-75
BLF6G27LS-75
BLF6G38-10G
BLF6G38-10G
BLS6G2731-120
BLS6G2731-120
BLS6G2731-6G
BLS6G2731-6G
CGD1042H
CGD1044H
CGD1042H
CGY1043
CGY1047
CGD942C
PMBFJ108
PMBFJ109
PMBFJ110
PMBFJ111
PMBFJ112
PMBFJ113
PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
BGY588C
BGE788C
BGY885A
BGY1085A
BGD712
BGD885
BFS17
PMBF4392
PMBF4393
TFF1014HN
FET
FET
FET
FET
FET
FET
FET
FET
BLF2045
FET
BLF3G22-30
BLF4G08LS-160A
BLF4G08LS-160A
BLF6G10-135RN
BLF6G10-160RN
BLF6G10-160RNL
BLF6G20-180RN
BLF6G20-40
BLF6G20S-230PRN
BLF6G22-180RN
CATV
CATV
CATV
CATV
CATV
CATV
WB trs
FET
FET
Satellite IC
118
NXP Semiconductors RF Manual 16th edition
6. Packing and packaging information
6.1ꢀ Packingꢀquantitiesꢀperꢀpackageꢀwithꢀrelevantꢀorderingꢀcode
Package
Package dimensions
L x W x H (mm)
Packing
quantity
Product
12NC ending
Packing
method
3,000
10,000
115
135
8 mm tape and reel
8 mm tape and reel
SOD323/SC-76
1.7ꢀxꢀ1.25ꢀxꢀ0.9
1.2ꢀxꢀ0.8ꢀxꢀ0.6
3,000
10,000
8,000
115
135
315
335
8 mm tape and reel
8 mm tape and reel
2 mm pitch tape and reel
2 mm pitch tape and reel
SOD523/SC-79
20,000
SOD882D
SOT23
1.0ꢀxꢀ0.6ꢀxꢀ0.4
2.9ꢀxꢀ1.3ꢀxꢀ0.9
10,000
315
reel
3,000
10,000
215
235
8 mm tape and reel
8 mm tape and reel
5,000
5,000
10,000
10,000
112
412
116
126
bulk, delta pinning
bulk, straight leads
tape and reel, wide pitch
tape ammopack, wide pitch
SOT54
4.6ꢀxꢀ3.9ꢀxꢀ5.1
1,000
4,000
115
135
12 mm tape and reel
12 mm tape and reel
SOT89/SC-62
SOT115
4.5ꢀxꢀ2.5ꢀxꢀ1.5
44.5ꢀxꢀ13.65ꢀxꢀ20.4
2.9ꢀxꢀ1.3ꢀxꢀ0.9
100
112
4 tray/box
3,000
10,000
215
235
8 mm tape and reel
8 mm tape and reel
SOT143(N/R)
1,000
4,000
115
135
12 mm tape and reel
12 mm tape and reel
SOT223/SC-73
SOT307
6.7ꢀxꢀ3.5ꢀxꢀ1.6
10ꢀxꢀ10ꢀxꢀ1.75
1,500
96
480
518
551
557
13" tape and reel dry pack
1 tray dry pack
5 tray dry pack
3,000
10,000
115
135
8 mm tape and reel
8 mm tape and reel
SOT323/SC-70
SOT341
2.0ꢀxꢀ1.25ꢀxꢀ0.9
5.3ꢀxꢀ10.2ꢀxꢀ2.0
2.0ꢀxꢀ1.25ꢀxꢀ0.9
1,000
658
118
112
13" tape and reel
tube
3,000
10,000
115
135
8 mm tape and reel
8 mm tape and reel
SOT343(N/R)
SOT343F
SOT360
2.1ꢀxꢀ1.25ꢀxꢀ0.7
6.5ꢀxꢀ4.4ꢀxꢀ0.9
3,000
2,500
115
118
8 mm tape and reel
16 mm tape and reel
3,000
10,000
115
135
8 mm tape and reel
8 mm tape and reel
SOT363/SC-88
SOT401
2.0ꢀxꢀ1.25ꢀxꢀ0.9
5ꢀxꢀ5ꢀxꢀ1.4
2,000
360
118
151
13" tape and reel
1 tray
SOT403
5.0ꢀxꢀ4.4ꢀxꢀ0.9
1.6ꢀxꢀ0.8ꢀxꢀ0.75
2,500
3,000
118
115
12 mm tape and reel
8 mm tape and reel
SOT416/SC-75
60
20
112
112
blister, tray
blister, tray
SOT467B
SOT467C
SOT502A
9.78ꢀxꢀ18.29ꢀxꢀ4.67
20.45ꢀxꢀ18.54ꢀxꢀ4.67
19.8ꢀxꢀ9.4ꢀxꢀ4.1
60
20
112
112
blister, tray
blister, tray
60
300
112
135
blister, tray
reel
NXP Semiconductors RF Manual 16th edition
119
Package
Package dimensions
L x W x H (mm)
Packing
quantity
Product
12NC ending
Packing
method
60
100
112
118
blister, tray
reel
SOT502B
SOT538A
SOT539A
SOT540A
19.8ꢀxꢀ9.4ꢀxꢀ4.1
5.1ꢀxꢀ4.1ꢀxꢀ2.6
160
112
blister, tray
60
300
112
135
blister, tray
reel
31.25ꢀxꢀ9.4ꢀxꢀ4.65
21.85ꢀxꢀ10.2ꢀxꢀ5.4
60
112
blister, tray
60
60
300
112
112
135
blister, tray
blister, tray
reel
SOT608A
SOT608B
10.1ꢀxꢀ10.1ꢀxꢀ4.2
10.1ꢀxꢀ10.1ꢀxꢀ4.2
60
100
300
112
118
135
blister, tray
reel
reel
6,000
1,500
100
118
115
551
12 mm tape and reel
8 mm tape and reel
tray
SOT616ꢀ
SOT617
4.0ꢀxꢀ4.0ꢀxꢀ0.85
5ꢀxꢀ5ꢀxꢀ0.85
6,000
118
tape and reel
4,000
1,000
490
118
515
551
157
13" tape and reel
7" tape and reel dry pack
1 tray dry pack
5 tray
SOT618
SOT638
6ꢀxꢀ6ꢀxꢀ0.85
14ꢀxꢀ14ꢀxꢀ1
2,450
1,000
90
450
518
551
557
13" tape and reel dry pack
1 tray dry pack
5 tray dry pack
SOT650-1
SOT666
3.0ꢀxꢀ3.0ꢀxꢀ0.85
1.6ꢀxꢀ1.2ꢀxꢀ0.7
6,000
4,000
118
115
reel
8 mm tape and reel
1,000
260
260
518
151
551
157
13" tape and reel dry pack
1 tray
1 tray dry pack
SOT684
8ꢀxꢀ8ꢀxꢀ0.85
1,300
5 tray dry pack
SOT724
SOT753
8.7ꢀxꢀ3.9ꢀxꢀ1.47
2.9ꢀxꢀ1.5ꢀxꢀ1.0
2,500
3,000
118
125
16 mm tape and reel
8 mm tape and reel
3,000
6,000
115
135
SOT763-1
SOT778
2.5ꢀxꢀ3.5ꢀxꢀ0.85
6.0ꢀxꢀ6.0ꢀxꢀ0.85
reel
490
4,000
551
518
tray
multiple trays
SOT822-1
SOT834-1
SOT883
SOT886
SOT891
15.9ꢀxꢀ11ꢀxꢀ3.6
15.9ꢀxꢀ11ꢀxꢀ3.15
1.0ꢀxꢀ0.6ꢀxꢀ0.5
1.45ꢀxꢀ1.0ꢀxꢀ0.5
1.0ꢀxꢀ1.0ꢀxꢀ0.5
3.0ꢀxꢀ3.0ꢀxꢀ0.85
17.4ꢀxꢀ9.4ꢀxꢀ3.88
180
127
127
115
115
132
118
112
tube
180
tube
SOT883
3,000
5,000
5,000
6,000
60
8 mm tape and reel
8 mm tape and reel
8 mm tape and reel
12 mm tape and reel
blister, tray
SOT908
SOT922-1
180
100
112
118
blister, tray
tape and reel
SOT975B
6.5ꢀxꢀ6.5ꢀxꢀ3.3
180
100
112
118
blister, tray
tape and reel
SOT975C
SOT979A
SOT1110A
SOT1110B
6.5ꢀxꢀ6.5ꢀxꢀ3.3
31.25ꢀxꢀ10.2ꢀxꢀ5.3
41.28ꢀxꢀ17.12ꢀxꢀ5.36
41.15ꢀxꢀ36.32ꢀxꢀ4.68
60
112
blister, tray
60
100
112
118
blister, tray
reel
60
112
blister, tray
120
NXP Semiconductors RF Manual 16th edition
Package
Package dimensions
L x W x H (mm)
Packing
quantity
Product
12NC ending
Packing
method
60
100
112
118
blister, tray
reel
SOT1112A
SOT1112B
SOT1120A
SOT1120B
SOT1121A
SOT1121B
16.65ꢀxꢀ20.32ꢀxꢀ4.205
16.65ꢀxꢀ15.22ꢀxꢀ4.205
9.4ꢀxꢀ19.815ꢀxꢀ4.1
60
100
112
118
blister, tray
reel
60
100
112
118
blister, tray
reel
60
100
112
118
blister, tray
reel
9.4ꢀxꢀ19.815ꢀxꢀ4.1
60
100
112
118
blister, tray
reel
34.16ꢀxꢀ19.94ꢀxꢀ4.75
20.70ꢀxꢀ19.94ꢀxꢀ4.75
60
100
112
118
blister,tray
reel
SOT1121C
SOT1130A
SOT1130B
13.4ꢀxꢀ20.575ꢀxꢀ3.785
20.45ꢀxꢀ17.12ꢀxꢀ4.65
9.91ꢀxꢀ17.12ꢀxꢀ4.65
DEV
60
DEV
112
DEV
blister, tray
blister, tray
60
112
60
100
112
118
blister, tray
reel
SOT1135A
SOT1135B
SOT1135C
20.45ꢀxꢀ19.94ꢀxꢀ4.65
16.65ꢀxꢀ9.78ꢀxꢀ4.205
16.65ꢀxꢀ9.78ꢀxꢀ4.205
60
100
112
118
blister, tray
reel
60
100
112
118
blister, tray
reel
SOT1138
19.48ꢀxꢀ20.57ꢀxꢀ3.9
4.0ꢀxꢀ6.0ꢀxꢀ0.85
DEV
DEV
1000
DEV
5000
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
115
DEV
SOT1179
DEV
SOT1198-1
SOT1204
SOT1209
SOT1240B
SOT1240C
SOT1242B
SOT1242C
SOT1244B
SOT1244C
10.0ꢀxꢀ5.5ꢀxꢀ0.8
reel
13.2ꢀxꢀ20.57ꢀxꢀ3.9
DEV
147
DEV
HXSON6
2ꢀxꢀ1.3ꢀxꢀ0.35
8 mm tape and reel
21.60ꢀxꢀ20.575ꢀxꢀ3.875
18.00ꢀxꢀ20.575ꢀxꢀ3.875
22.60ꢀxꢀ32.45ꢀxꢀ4.455
18.00ꢀxꢀ32.45ꢀxꢀ4.455
19.43ꢀxꢀ20.575ꢀxꢀ3.875
18.00ꢀxꢀ20.575ꢀxꢀ3.875
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
DEV
NXP Semiconductors RF Manual 16th edition
121
6.2ꢀ Markingꢀcodes
Inꢀgeneral,ꢀdeviceꢀmarkingꢀincludesꢀtheꢀpartꢀnumber,ꢀsomeꢀmanufacturingꢀinformationꢀandꢀtheꢀNXPꢀlogo.ꢀIfꢀpackagesꢀꢀ
areꢀtooꢀsmallꢀforꢀtheꢀfull-lengthꢀpartꢀnumberꢀaꢀshorter,ꢀcodedꢀpartꢀnumberꢀ–ꢀmarkingꢀcodeꢀ–ꢀisꢀusedꢀ(whereꢀ%ꢀ=ꢀplaceholderꢀꢀ
forꢀmanufacturingꢀsiteꢀcode).ꢀTheꢀfull-lengthꢀpartꢀnumberꢀisꢀalwaysꢀprintedꢀonꢀtheꢀpackingꢀlabelꢀonꢀtheꢀboxꢀorꢀbulk-packꢀinꢀ
whichꢀtheꢀdevicesꢀareꢀsupplied.
pꢀ =ꢀmadeꢀinꢀHongꢀKong
tꢀ =ꢀmadeꢀinꢀMalaysia
Wꢀ =ꢀmadeꢀinꢀChina
Marking code
10%
13%
20%
21%
22%
24%
25%
26%
28%
29%
30%
31%
32%
33%
34%
35%
36%
38%
39%
40%
41%
42%
47%
48%
49%
50%
1
Final product
BAT18
BB207
BF545A
BF545B
BF545C
BF556A
BF556B
BF556C
BF861A
BF861B
BF861C
BFR505
BFR520
BFR540
BFT25A
ON4288
ON4690
PMBFJ108
PMBFJ109
PMBFJ110
PMBFJ111
PMBFJ112
PMBFJ113
PMBFJ308
PMBFJ309
PMBFJ310
BA277
BB182
BB182/L
BB189
BB189/L
BA891
BA891/L
BB178
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOD523
SOD523
SOD523
SOD523
SOD523
SOD523
SOD523
SOD523
SOD523
SOD523
SOD523
SOT323
SOT323
SOT23
SOT23
SOT23
SOT343
SOT23
SOT23
SOT23
SOT23
SOT343
SOT343
SOT363
SOT23
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT363
SOT143
SOT143
SOT143
SOT143
Marking code
%M5
%M6
%M7
%M8
%M9
%M9
%MA
%MB
%MC
%MD
%ME
%MF
%MG
%MH
%MK
%ML
%MM
%MM
%MN
%MP
%MP
%MR
%MS
%MT
%MU
%MV
%MW
%MX
%MY
%MZ
%VA
%VB
LE
L4
LC
L3
1A
1B
1B%
1C
1C%
1N%
2A%
2E
2L
2N
4A
4K%
4L%
4W%
5K%
5W%
6F%
6K%
6W%
7K%
8K%
A1
Final product
BF909A
BF909AR
BF904A
BF904AR
BSS83
ON4906
BF991
BF992
BF904
BF904R
BFG505
BFG520
BFG540
BFG590
BFG505/X
BFG520/X
BFG540/X
ON4832
BFG590/X
BFG520/XR
ON4973
Package
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT363
SOT363
SOD882D
SOD882D
SOD882D
SOD882D
SOT1209
SOT1209
SOT363
SOT1209
SOT23
Marking code
A2
A2
A2
A2%
A3
Final product
BB184
BGA2002
BAP70Q
BGA2022
BAP64-03
BB198
Package
SOD523
SOT343
SOT753
SOT363
SOD323
SOD523
SOT343
SOT363
SOD323
SOT363
SOT363
SOT343
SOD323
SOT343
SOT363
SOD323
SOT886
SOT891
SOT23
SOT886
SOT363
SOT886
SOT23
SOT343
SOT363
SOT363
SOT89
SOD523
SOT363
SOT363
SOT363
SOT363
SOD323
SOT343
SOD323
SOT343
SOD323
SOT343
SOT343
SOT343
SOT343
SOT343
SOT343
SOT23
A3
A3
BGA2003
BGA2031/1
BAP51-03
BGA2011
BGA2012
BFG310W/XR
BAP50-03
BFG325W/XR
PMBFJ620
BAP70-03
BGU7005
BGU7003
BSR12
BGU7007
BGA2715
BGU7008
BF862/B
BFU725F/N1
BGA2716
BGA2714
BFQ591
A3%
A5
A5%
A6%
A7%
A8
A8%
A8%
A9
AC
B3
B5%
B6
B6%
B7
B7%
B7%
B7%
BA%
BCp
C
C1%
C2%
C4%
C5%
CL
BFG540/XR
BFG10
BFG10/X
BFG25A/X
BFG67/X
BFG92A/X
BFG93A/X
BF1100
BF1100R
BGU7041
BGU7042
BAP64LX
BB179LX
BAP55LX
BB178LX
BGU6101
BGU6102
BGA2717
BGU6104
BAP50-05
BAP70-04W
BF862
2
2
4
4
7
7
8
8
BB179B
BGM1011
BGM1012
BGM1013
BGM1014
BAP70-03/DG
BFU610F
BAP63-03
BFU630F
BAP65-03
BFU660F
BFU690F
BFU710F
BFU730F
BFU760F
BFU790F
BFS17
BFS17/FD
ON4438
BFS17W
BFS17A
ON5023
BGA2712
BGA2709
BAP55L
BFQ19
BFQ18A
D1
D2
D2
D3
D3
D4
D5
D6
BB178/L
BB179
9
9
BB179/L
BFR93AW/DG
BAP51-05W
PMBF4393
PMBF4391
PMBF4392
ON5088
PMBFJ176
PMBFJ175
PMBFJ174
PMBFJ177
ON5087
ON5089
BF1210
PMBFJ177/DG
BGA2800
BGA2801
BGA2815
BGA2816
BGA2850
BGA2865
BGA2866
BF908
%1V
%1W
%6G
%6J
%6K
%6N
%6S
%6W
%6X
%6Y
%7N
%8N
%AB
%BG
%E7
%E8
%E9
%EA
%EB
%EC
%ED
%M1
%M2
%M3
%M4
SOT323
SOT23
D7
D8
PRF949/DG
BF1208
SOT416
SOT666
SOT666
SOT666
SOT23
SOT23
SOT323
SOT23
SOT323
SOT23
SOT23
SOT323
SOT23
SOT23
E1%
E1%
E1%
E1%
E2%
E2%
E2%
E3%
E6
FB
FF
FG
G2
SOT23
SOT23
SOT323
SOT23
SOT23
SOT363
SOT363
SOD882
SOT89
SOT89
SOT89
SOD523
SOT363
SOT363
SOT363
SOT363
SOD523
SOD523
BF1206F
BF1208D
BAP64-04
BAP50-04
BAP64-04W
BAP64-05
BAP64-05W
BAP1321-04
BAP64-06
BAP50-04W
BAP65-05
BAP70-05
BA591
BFQ149
BA278
G2%
G3%
G4%
G5%
K1
BGA2711
BGA2748
BGA2771
BGA2776
BAP51-02
BAP51-05W
SOD323
SOD523
SOT343
SOT753
SOD323
A1
A1
A1
A2
BB208-02
BGA2001
BAP64Q
BB208-03
BF908R
BF909
BF909R
K2
122
NXP Semiconductors RF Manual 16th edition
Marking code
K4
K5
K6
K7
K8
K9
L1
L2
L2
L2%
L3
L3%
L4
L4%
L5
L6
L6%
L7
L8
L8
Final product
BAP50-02
BAP63-02
BAP65-02
BAP1321-02
BAP70-02
BB199
BB202LX
BB202
BAP51LX
BF1203
BB178LX
BF1204
BB179LX
BF1205
BB179BLX
BB181LX
BF1206
BB182LX
BA792
Package
SOD523
SOD523
SOD523
SOD523
SOD523
SOD523
SOD882T
SOD523
SOD882T
SOT363
SOD882T
SOT363
SOD882T
SOT363
SOD882T
SOD882T
SOT363
SOD882T
SOD110
SOD882T
SOT363
SOT343
SOT143
SOD882T
SOT143
SOT23
SOD882T
SOD882T
SOT143
SOT143
SOD882T
SOT343
SOT343
SOT143
SOD882T
SOT143
SOD882T
SOT143
SOD882T
SOT143
SOT363
SOT143
SOT363
SOT363
SOT363
SOT363
SOT23
Marking code
MH
MH%
MK
ML
ML
MO%
MO%
MO4
MO6
N
Final product
BF904AWR
BF996S
BF1211WR
BF1212WR
BF1212WR/L
BF998
BF998R
BF904
BF904R
BB181
BFR505T
BFS505
BFM505
BFR520T
BFS520
BFM520
BFG520W
BFG505
Package
SOT343
SOT143
SOT343
SOT343
SOT343
SOT143
SOT143
SOT143
SOT143
SOD523
SOT416
SOT323
SOT363
SOT416
SOT323
SOT363
SOT343
SOT143
SOT143
SOT143
SOT143
SOT143
SOT343
SOT89
SOT323
SOT143
SOT143
SOT143
SOT143
SOT143
SOT143
SOT323
SOT343
SOT143
SOT143
SOT343
SOT343
SOT363
SOT343
SOT143
SOT343
SOT143
SOT343
SOT143
SOT343
SOT143
SOT343
SOT143
SOT143
SOT143
SOT143
SOT143
SOT23
Marking code
S1%
S2%
S2%
S3%
S6%
S7%
S8%
S9%
SB%
SB%
SC%
SC%
SD%
SE%
T5
TA%
TB%
UW
UY
UZ
V0%
V0%
V1
V1%
V11
V12
V14
V15
V2%
V2%
V2%
V3%
V4%
V6%
V8
VA
VB
VC
VC%
VD%
W1
Final product
BFG310/XR
BFG325/XR
BBY40
BF1107
BF510
BF511
BF512
BF513
BF1214
Package
SOT143
SOT143
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT363
SOT363
SOT23
BF1214/L
BB201
N0
N0%
N0%
N2
N2%
N2%
N3
N33
N36
N37
N38
N39
N4
BGU7031
BGU7032
BGU7033
BFG10W/X
BGA2818
BGA2819
BGU7003W
BGU7004
BGU8007
PBR941
SOT363
SOT363
SOT363
SOT343
SOT363
SOT363
SOT886
SOT886
SOT886
SOT23
SOT323
SOT343
SOT23
SOT143
SOT143
SOT143
SOT143
SOT23
BFG520
BFG540
BFG590
BB187LX
BF1208
BF1201WR
BF1201
L9%
LA
LA%
LB
LB%
LB%
LC
BFG505/X
BFG520W/X
BFQ540
BFS540
BFG520/X
BFG540/X
ON4832
BFG590/X
BFG520/XR
BFG540/XR
BFS25A
PRF947
BFG25AW/X
BFT25
BAP50LX
BF1201R
PBR941B
BAP55LX
BAP63LX
BF1202
BF1202/L
BAP64LX
BF1202WR
BF1202WR/L
BF1202R
BAP65LX
BF1211
N4
N4%
N42
N43
N43
N44
N48
N49
N6%
N7
N70
N71
N8
N9
N9%
NA
NA%
NB
NB%
NC
NC%
ND
ND%
NE
NE%
NF%
NG%
NG%
NH%
NL%
33*
BFG25A/X
BFG67/X
BFG92A/X
BFG93A/X
BFQ67
ON5042
BFQ67W
BFG67
BAP64-06W
BAP65-05W
BAP1321-03
BF1217WR
BF1118W
BF1118WR
BF1118
LD
LD%
LD%
LE
LE
LE
LE%
LF
LF%
LG
LG%
LH
SOT23
SOT323
SOT143
SOT323
SOT323
SOD323
SOT343
SOT343
SOT343
SOT143
SOT143
SOT363
SOT23
BFG540W/X
BFG10
BFG10/X
BFG540W/XR
BFG540W
BAP70AM
BF1105WR
BF1105R
BF1109WR
BF1109R
BF1101WR
BF1101R
BFG424W
BF1101
BAP142LX
BF1212
BAP1321LX
BF1211R
BGU7044
BF1212R
BGU7045
BGA2867
BGA2874
BGA2817
BFR30
BFR31
BF1207
BF908
BF908R
BF909
BF909R
BFT46
BF909A
BF909AR
BF1215
LH%
LJ%
LK%
LK%
LP%
LR%
LS%
M1%
M2%
M2%
M26
M27
M28
M29
M3%
M33
M34
M4%
M4%
M41
M42
M5%
M5%
M56
M57
M6%
M6%
M7%
M74
M74
M91
M92
MA%
MB
BF1118R
BF1102
BFT92
BFT92W
PBR951
W1%
W1%
W2%
W2%
W2%
W4%
W6%
W7%
W9%
X
SOT323
SOT23
PRF957
SOT323
SOT363
SOT323
SOT323
SOT323
SOT323
SOD523
SOD523
SOT23
SOT323
SOT323
SOT363
SOD523
SOT343
SOT883
SOT883
SOT883
SOT883
SOT23
BF1102R
BAP50-05W
BAP51-04W
BAP51-06W
BAP63-05W
BB187
BFG424F
BF1105
BF1109
SOT23
SOT363
SOT143
SOT143
SOT143
SOT143
SOT23
SOT143
SOT143
SOT363
SOT23
SOT143
SOT143
SOT23
SOT363
SOT143
SOT143
SOT23
SOT363
SOT363
SOT143
SOT143
SOT143
SOT143
SOT363
SOT343
SOT363
SOT343
SOT363
SOT343
SOT343
SOT343
SOT343
SOT143
BF1108
BF1108/L
BF1108R
BFR94A
BFR540
BB131
X
BB187/L
BFT93
X1%
X1%
XG%
YC%
Z
ZA%
ZC
ZD
ZE
ZF
ZK%
ZX%
SOT143
SOD323
SOT343
SOT23
BFT93W
BFR94AW
BGA2870
BB145B
BFU668F
BFU710LX
BFU730LX
BFU760LX
BFU790LX
ON5052
BGA2022/C
P1
P1
BFG21W
BFR92A
P2%
P2%
P2%
P3
p3A
P4
p4A
P5
P5
p5A
P6
p6K
p6L
P8
BSR56
ON4640
BFR92AW
BFG403W
BGA6289
BFG410W
BGA6489
BB135
BFG425W
BGA6589
BFG480W
BGA7024
BGA7027
BB148
BB149
BB152
BB153
BB156
BB149A
BFR93A
SOT23
BF904A
BF904AR
BSR57
BF1216
BF1100
BF1100R
BSR58
BF1205C
BF1218
BSS83
ON4906
BF991
SOT323
SOT343
SOT89
SOT343
SOT89
SOD323
SOT343
SOT89
SOT343
SOT89
SOT363
SOT89
SOD323
SOD323
SOD323
SOD323
SOD323
SOD323
SOT23
SOT323
SOT23
SOT23
BF992
P9
PB
PC
PF
BGA2802
BF998WR
BGA2803
BF904WR
BGA2851
BF908WR
BF909WR
BF1100WR
BF909AWR
BF994S
MB%
MC
MC%
MD
ME
MF
MG
MG%
PL
R2%
R2%
R5%
R7%
R8%
S
BFR93AW
BFR93AR
BFR106
BFG93A
BAP64-02
SOT143
SOD523
NXP Semiconductors RF Manual 16th edition
123
7.ꢀ Abbreviationsꢀ
3-way
AM
Doherty design using 3 discrete transistors
Amplitude Modulation
MPPM
Main and peak device realized in same push-
pull transistor (2 times)
Multimedia over Coax Alliance
MoCA
ASIC
ASYM
Application Specific Integrated Circuit
MOSFET
Metal–Oxide–Semiconductor Field Effect
Transistor
Medium Power Amplifier
Magnetic Resonance Imaging
Noise Figure
Asymmetrical design of Doherty (main and
peak device are different)
Band Pass Filter
MPA
MRI
BPF
BUC
Block Upconverter
NF
CATV
CDMA
CMMB
CMOS
CQS
Community Antenna Television
Code Division Multiple Access
Chinese Multimedia Mobile Broadcasting
Complementary Metal Oxide Semiconductor
Customer Qualification Samples
Digital Audio Broadcasting
NIM
NMR
PA
Network Interface Module
Nuclear Magnetic Resonance
Power Amplifier
PAR
PEP
Peak to Average Ratio
Peak Envelope Power
DAB
pHEMT
pseudomorphic High Electron Mobility
Transistor
Phase Locked Loop
Quality BiCMOS
DECT
Digital Enhanced Cordless
Telecommunications
PLL
DiSEqC
DSB
Digital Satellite Equipment Control
Digital Signal Processor
Digital Video Broadcasting
Enhanced Data Rates for GSM Evolution
Electro Static Device
QUBiC
RF
Radio Frequency
DVB
RFS
Release for Supply
Restriction of Hazardous Substances
Receive
EDGE
ESD
RoHS
Rx
FET
Field Effect Transistor
SARFT
State Administration for Radio, Film and
Television
Serializer
FM
Frequency Modulation
GaAs
GaN
Gen
Gallium Arsenide
SER
Gallium Nitride
SiGe:C
SMATV
SMD
Sillicon Germanium Carbon
Satellite Master Antenna Television
Surface Mounted Device
Single Pole, Double Throw
Generation
GPS
Global Positioning System
Global System for Mobile communications
Heterojunction Bipolar Transistor
High Definition Television
High Frequency (3-30 MHz)
Hybrid Fiber Coax
GSM
HBT
SPDT
SYM
Symmetrical design of Doherty (main and peak
device are the same type of transistor)
HDTV
HF
TD-SCDMA Time Division-Synchronous Code Division
Multiple Access
TCAS
TMA
TTFF
Tx
HFC
HFET
HPA
Traffic Collision Avoidance Systems
Tower Mounted Amplifier
Heterostructure Field Effect Transistor
High Power Amplifier
Time to First Fix
HVQFN
Plastic thermally enHanced Very thin Quad
Flat pack No leads
Transmit
IF
Intermediate Frequency
UHF
Ultra High Frequency (470-860 MHz)
Universal Mobile Telecommunications System
Voltage Controlled Oscillator
Variable Gain Amplifier
ISM
Industrial, Scientific, Medical - reserved
frequency bands
Laterally Diffused Metal-Oxide-Semiconductor
Low Noise Amplifier
UMTS
VCO
LDMOS
LNA
VGA
VHF
Very High Frequency (30-300 MHz)
Voice over Internet Protocol
Very Small Aperture Terminal
Wideband Code Division Multiple Access
LNB
Low Noise Block
VoIP
LO
Local Oscillator
VSAT
WCDMA
WiMAX
LPF
Low Pass Filter
MESFET
MMIC
MMPP
Metal Semiconductor Field Effect Transistor
Monolithic Microwave Integrated Circuit
Worldwide Interoperability for Microwave
Access
Wireless Local Area Network
Main and peak devices realized separately in
halves of push-pull transistor
WLAN
124
NXP Semiconductors RF Manual 16th edition
8.ꢀ Contactsꢀandꢀwebꢀlinks
How to contact your authorized distributor or local NXP representative.
Authorized distributors
NXP RF MMICs:
http://www.nxp.com/mmics
Asia Pacific:
http://www.nxp.com/profile/sales/asia_pacific_dist
NXP RF wideband transistors:
http://www.nxp.com/rftransistors
Europe / Africa / Middle East:
http://www.nxp.com/profile/sales/europe_dist
NXP RF power & base stations:
http://www.nxp.com/rfpower
North America:
http://www.nxp.com/profile/sales/northamerica_dist
NXP RF FETs:
http://www.nxp.com/rffets
Local NXP offices
NXP RF CATV electrical & optical:
http://www.nxp.com/catv
Asia Pacific:
http://www.nxp.com/profile/sales/asia_pacific
NXP RF applications:
http://www.nxp.com/rf
Europe / Africa / Middle East:
http://www.nxp.com/profile/sales/europe
NXP application notes:
http://www.nxp.com/technical-support-portal/50812/50961
North America:
http://www.nxp.com/profile/sales/northamerica
NXP cross-references:
http://www.nxp.com
Web links
NXP packaging:
NXP Semiconductors:
http://www.nxp.com/package
http://www.nxp.com
NXP end-of-life:
NXP RF Manual web page:
http://www.nxp.com/products/eol
http://www.nxp.com/rfmanual
NXP quality handbook:
NXP varicaps:
http://www.standardics.nxp.com/quality/handbook
http://www.nxp.com/varicaps
NXP literature:
NXP RF PIN diodes:
http://www.nxp.com/products/discretes/documentation
http://www.nxp.com/pindiodes
NXP sales offices and distributors:
NXP RF schottky diodes:
http://www.nxp.com/profile/sales
http://www.nxp.com/rfschottkydiodes
NXP Semiconductors RF Manual 16th edition
125
9.ꢀ Productꢀindex
Portfolio
Portfolio
chapter
Portfolio
chapter
Portfolio
chapter
Type
Type
Type
Type
chapter
1PS10SB82
1PS66SB17
1PS66SB82
1PS70SB82
1PS70SB84
1PS70SB85
1PS70SB86
1PS76SB17
1PS79SB17
1PS88SB82
BA277
3.2.4
3.2.4
3.2.4
3.2.4
3.2.4
3.2.4
3.2.4
3.2.4
3.2.4
3.2.4
3.2.3
3.2.3
3.2.3
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
3.2.2
BAP70Q
BAT17
3.2.2
3.2.4
3.2.3
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.2.1
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
BF1208D
BF1210
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.5.2
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
BFG325W/XR
BFG35
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.5.1
3.5.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
BAT18
BF1211
BFG403W
BFG410W
BFG424F
BFG424W
BFG425W
BFG480W
BFG505
BB131
BF1211R
BF1211WR
BF1212
BB135
BB145B
BB148
BF1212R
BF1212WR
BF1214
BB149
BB149A
BB152
BF1215
BFG505/X
BFG505W
BFG505W/X
BFG505W/XR
BFG520
BB153
BF1216
BA591
BB156
BF1217
BA891
BB178
BF1218
BAP1321-02
BAP1321-03
BAP1321-04
BAP1321LX
BAP142LX
BAP50-02
BAP50-03
BAP50-04
BAP50-04W
BAP50-05
BAP50-05W
BAP50LX
BB178LX
BB179
BF510
BF511
BFG520/X
BFG520/XR
BFG520W
BFG520W/X
BFG540
BB179B
BB179BLX
BB179LX
BB181
BF512
BF513
BF545A
BF545B
BF545C
BF556A
BF556B
BF556C
BF861A
BF861B
BB182
BFG540/X
BFG540/XR
BFG540W
BFG540W/X
BFG540W/XR
BFG541
BB184
BB187
BB187LX
BB189
BB198
BAP51-02
BAP51-03
BAP51-04W
BAP51-05W
BAP51-06W
BAP51LX
BB199
BF861C
BF862
BFG590
BB201
BFG590/X
BFG591
BB202
BF904A
BF904AR
BF904AWR
BF908
BB207
BFG67
BB208-02
BB208-03
BBY40
BFG67/X
BFG92A/X
BFG93A
BAP55LX
BF908R
BF908WR
BF909A
BF909AR
BF909AWR
BF991
BAP63-02
BAP63-03
BAP63-05W
BAP63LX
BF1102(R)
BF1105
BF1105R
BF1105WR
BF1107
BF1108
BF1108R
BF1108W
BF1108WR
BF1118
BFG93A/X
BFG94
BFG97
BFM505
BAP64-02
BAP64-03
BAP64-04
BAP64-04W
BAP64-05
BAP64-05W
BAP64-06
BAP64-06W
BAP64LX
BFM520
BF992
BFM540
BF994S
BFQ149
BF996S
BF998
BFQ18A
BFQ19
BF998R
BF998WR
BFG10
BFQ591
BF1118R
BF1118W
BF1118WR
BF1201
BF1201R
BF1201WR
BF1202
BF1202R
BF1202WR
BF1203
BF1204
BF1206
BF1207
BF1208
BFQ67
BFQ67W
BFR106
BFG10/X
BFG10W/X
BFG135
BFG198
BFG21W
BFG25A/X
BFG25AW
BFG25AW/X
BFG31
BAP64Q
BFR30
BAP65-02
BAP65-03
BAP65-05
BAP65-05W
BAP65LX
BFR31
BFR505
BFR505T
BFR520
BFR520T
BFR540
BAP70-02
BAP70-03
BAP70-04W
BAP70-05
BAP70AM
BFR92A
BFG310/XR
BFG310W/XR
BFG325/XR
BFR92AW
BFR93A
BFR93AR
126
NXP Semiconductors RF Manual 16th edition
Portfolio
chapter
Portfolio
chapter
Portfolio
chapter
Portfolio
chapter
Type
Type
Type
Type
BFR93AW
BFR94A
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.5.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.3.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
BGA6102
BGA6104
BGA6289
BGA6489
BGA6589
BGA7014
BGA7017
BGA7020
BGA7024
BGA7027
BGA7124
BGA7127
BGA7130
BGA7204
BGA7210
BGA7350
BGA7351
BGD712
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.1
3.6.1
3.6.1
3.4.1
3.4.1
3.6.4
3.6.4
3.6.5
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.1
3.4.2
3.4.2
3.4.2
3.4.2
BGX7300
3.4.2
3.6.1
BLF6G20S-230PRN
BLF6G21-10G
3.7.1.3
3.7.1.2
3.7.1.4
3.7.1.4
3.7.1.4
3.7.1.4
3.7.1.4
3.7.1.4
3.7.1.4
3.7.1.4
3.7.1.5
3.7.1.6
3.7.1.6
3.7.1.6
3.7.1.6
3.7.1.6
3.7.1.6
3.7.1.7
3.7.1.7
3.7.1.7
3.7.1.7
3.7.1
BGX885N
BFR94AW
BFS17
BGY588C
3.6.1
BLF6G22(LS)-180PN
BLF6G22(LS)-180RN
BLF6G22(S)-45
BLF6G22L-40BN
BLF6G22L(S)-40P
BLF6G22LS-100
BLF6G22LS-130
BLF6G22LS-75
BLF6G27-10(G)
BLF6G27(LS)-100
BLF6G27(LS)-135
BLF6G27(LS)-75
BLF6G27(S)-45
BLF6G27L(S)-40P
BLF6G27L(S)-50BN
BLF6G38-10(G)
BLF6G38(LS)-100
BLF6G38(LS)-50
BLF6G38(S)-25
BLF6H10L(S)-160
BLF7G10L(S)-250
BLF7G15LS-200
BLF7G15LS-300P
BLF7G20L(S)-200
BLF7G20L(S)-250P
BLF7G20L(S)-90P
BLF7G20LS-140P
BLF7G20LS-260A
BLF7G21L(S)-160P
BLF7G21LS-160
BLF7G22L(S)-100P
BLF7G22L(S)-130
BLF7G22L(S)-160
BLF7G22L(S)-200
BLF7G22L(S)-250P
BLF7G24L(S)-100
BLF7G24L(S)-140
BLF7G24L(S)-160P
BLF7G27L-200PB
BLF7G27L(S)-100
BLF7G27L(S)-140
BLF7G27L(S)-150P
BLF7G27L(S)-75P
BLF7G27L(S)-90P
BLF7G27LS-90PG
BLF861A
BGY66B
3.6.5
BFS17A
BGY67
3.6.5
BFS17W
BFS25A
BGY67A
3.6.5
BGY68
3.6.5
BFS505
BGY785A
3.6.1
BFS520
BGY787
3.6.1
BFS540
BGY835C
3.6.1
BFT25
BGY885A
3.6.1
BFT25A
BGY887
3.6.1
BFT46
BGY887B
3.6.1
BFT92
BGY888
3.6.1
BFT92W
BFT93
BLA0912-250R
BLA1011-10
3.7.3.1
3.7.3.1
3.7.3.1
3.7.3.1
3.7.3.1
3.7.3.1
3.7.3.1
3.7.3.1
3.7.3.1
3.7.1.3
3.7.1.4
3.7.2
BFT93W
BFU610F
BFU630F
BFU660F
BFU690F
BFU710F
BFU725F/N1
BFU730F
BFU730LX
BFU760F
BFU790F
BGA2001
BGA2002
BGA2003
BGA2011
BGA2012
BGA2022
BGA2031/1
BGA2709
BGA2712
BGA2714
BGA2715
BGA2716
BGA2717
BGA2748
BGA2776
BGA2800
BGA2801
BGA2802
BGA2803
BGA2815
BGA2817
BGA2818
BGA2819
BGA2850
BGA2851
BGA2865
BGA2866
BGA2867
BGA2868
BGA2869
BGA2870
BGA2874
BGA6101
BLA1011-2
BLA1011-300
BLA1011(S)-200R
BLA6G1011-200R
BLA6G1011LS-200RG
BLA6H0912-500
BLA6H1011-600
BLD6G21L(S)-50
BLD6G22L(S)-50
BLF174XR(S)
BLF178XR(S)
BLF2425M6L(S)180P
BLF2425M7L(S)140
BLF2425M7L(S)200
BLF2425M7L(S)250P
BLF25M612(G)
BLF369
BGD712C
BGD714
BGD812
BGD814
BGD816L
BGE787B
BGE788C
BGE885
3.7.1.1
3.7.1.2
3.7.1.2
3.7.1.3
3.7.1.3
3.7.1.3
3.7.1.3
3.7.1
BGM1013
BGM1014
BGO807C
BGO807CE
BGR269
3.7.2
3.7.2
3.7.2
3.7.2
3.7.2
3.7.1.4
3.7.1.4
3.7.1.4
3.7.1.4
3.7.1.4
3.7.1.4
3.7.1.4
3.7.1.5
3.7.1.5
3.7.1
BGU6101
BGU6102
BGU6104
BGU7003
BGU7003W
BGU7004
BGU7005
BGU7007
BGU7008
BGU7031
BGU7032
BGU7033
BGU7041
BGU7042
BGU7044
BGU7045
BGU7051
BGU7052
BGU7053
BGU7060
BGU7061
BGU7062
BGU7063
BGU8006
BGU8007
BGX7100
BGX7101
BGX7220
BGX7221
3.7.2
3.7.2.1
3.7.1.4
3.7.1.4
3.7.2.1
3.7.2
BLF3G21-30
BLF3G21-6
BLF571
BLF572XR(S)
BLF573(S)
3.7.2.1
3.7.2.1
3.7.2
BLF574
BLF574XR(S)
BLF578
3.7.2.1
3.7.2
3.7.1.6
3.7.1.6
3.7.1.6
3.7.1.6
3.7.1.6
3.7.1.6
3.7.1
BLF578XR(S)
BLF642
3.7.2.2
3.7.2.1
3.7.2.1
3.7.2
BLF645
BLF647
BLF647P(S)
BLF6G10(LS)-135RN
BLF6G10(LS)-160RN
BLF6G10(LS)-200RN
BLF6G10(S)-45
BLF6G10L-40BRN
BLF6G10L(S)-260PRN
BLF6G15L-250PBRN
BLF6G15L-40BRN
BLF6G15L(S)-40RN
BLF6G20(LS)-110
BLF6G20(LS)-180RN
BLF6G20(LS)-75
BLF6G20(S)-45
BLF6G20LS-140
3.7.1.1
3.7.1.1
3.7.1.1
3.7.1.1
3.7.1.1
3.7.1.1
3.7.1.2
3.7.1.2
3.7.1
3.7.2.1
3.7.2.1
3.7.2.2
3.7.2.2
3.7.2.2
3.7.2.2
3.7.2.2
3.7.2.2
3.7.2.2
3.7.1.1
3.7.1
BLF871(S)
BLF878
BLF879P
BLF881(S)
BLF884P(S)
BLF888
BLF888A(S)
3.7.1.3
3.7.1.3
3.7.1.3
3.7.1.3
3.7.1.3
BLF888B(S)
BLF8G10L(S)-160
BLF8G10L(S)-160V
BLF8G10L(S)-300P
BLF8G10LS-200GV
3.7.1
3.7.1
NXP Semiconductors RF Manual 16th edition
127
Portfolio
chapter
Portfolio
chapter
Portfolio
chapter
Type
Type
Type
BLF8G10LS-270GV
BLF8G10LS-400PGV
BLF8G20L(S)-200V
BLF8G20LS-270GV
BLF8G20LS-270PGV
BLF8G22LS-160BV
BLF8G22LS-200GV
BLF8G22LS-270GV
BLF8G22LS-400PGV
BLF8G24L(S)-200P
BLF8G27LS-140
BLF8G27LS-140G
BLF8G27LS-140V
BLF8G27LS-200PGV
BLF8G27LS-280PGV
BLL1214-250R
3.7.1
3.7.1
BLT80
3.3.1
3.3.1
3.7.3
3.5.1
3.5.1
3.5.1
3.5.2
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.3
3.6.2
3.6.2
3.6.2
3.6.2
3.6.2
3.6.2
3.6.1
3.7.4
3.7.4
3.7.4
3.7.4
3.8
PMBF4393
PMBFJ108
PMBFJ109
PMBFJ110
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.5.1
3.3.1
3.3.1
3.3.1
3.4.4
3.4.4
3.4.3
3.4.3
3.4.3
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.4.4
3.8
BLT81
3.7.1
BLU6H0410L(S)-600P
BSR56
3.7.1
3.7.1
BSR57
PMBFJ111
3.7.1
BSR58
PMBFJ112
3.7.1
BSS83
PMBFJ113
3.7.1
CGD1040HI
CGD1042H
CGD1042HI
CGD1044H
CGD1044HI
CGD1046HI
CGD942C
CGD944C
CGD982HCI
CGD985HCI
CGD987HCI
CGY1032
PMBFJ174
3.7.1
PMBFJ175
3.7.1
PMBFJ176
3.7.1.6
3.7.1
PMBFJ177
PMBFJ308
PMBFJ309
PMBFJ310
PMBFJ620
PRF947
3.7.1
3.7.1
3.7.1
3.7.3.2
3.7.3.2
3.7.3.2
3.7.3
BLL1214-35
PRF949
BLL6G1214L-250
BLL6G1214LS-250
BLL6H0514-25
PRF957
TFF1003HN
TFF1007HN
TFF1014HN
TFF1015HN
TFF1017HN
TFF11070HN
TFF11073HN
TFF11077HN
TFF11080HN
TFF11084HN
TFF11088HN
TFF11092HN
TFF11094HN
TFF11096HN
TFF11101HN
TFF11105HN
TFF11110HN
TFF11115HN
TFF11121HN
TFF11126HN
TFF11132HN
TFF11139HN
TFF11145HN
TFF11152HN
ZigBee PRO
3.7.3.2
3.7.3.2
3.7.3.2
3.7.3.2
3.7.3
CGY1041
BLL6H0514L(S)-130
BLL6H1214(LS)-500
BLL6H1214L(S)-250
BLL6H1214LS-500
BLM6G10-30(G)
BLM6G22-30(G)
BLM7G22S-60PB(G)
BLP7G07S-140P(G)
BLP7G09S-140P(G)
BLP7G22-10
CGY1043
CGY1047
CGY1049
CGY1085A
CGY888C
3.7.1.1
3.7.1.4
3.7.1
CLF1G0035-100
CLF1G0035-50
CLF1G0060-10
CLF1G0060-30
JenNet
3.7.1
3.7.1
3.7.1
BLP7G22-10*
3.7.1.4
3.7.3.3
3.7.3.3
3.7.3.3
3.7.3.3
3.7.3
JenNet-IP
JN5142-001
JN5142-J01
JN5148-001
JN5148-001-M00
JN5148-001-M03
JN5148-001-M04
JN5148-J01
JN5148-Z01
PBR941
3.8
BLS2933-100
3.8
BLS6G2731-6G
3.8
BLS6G2731(S)-120
BLS6G2731S-130
BLS6G2735L(S)-30
BLS6G2933S-130
BLS6G3135(S)-120
BLS6G3135(S)-20
BLS7G2325L-105
BLS7G2729L(S)-350P
BLS7G2933S-150
BLS7G3135L(S)-350P
BLT50
3.8
3.8
3.8
3.7.3.3
3.7.3.3
3.7.3.3
3.7.3.3
3.7.3
3.8
3.8
3.8
3.3.1
3.3.1
3.2.4
3.2.4
3.5.1
3.5.1
PBR951
3.7.3.3
3.7.3
PMBD353
PMBD354
3.3.1
PMBF4391
PMBF4392
BLT70
3.3.1
128
NXP Semiconductors RF Manual 16th edition
Notes
NXP Semiconductors RF Manual 16th edition
129
Notes
130
NXP Semiconductors RF Manual 16th edition
www.nxp.com
© 2012 NXP B.V.
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner. The information presented in this document does not form part of any quotation or contract,
is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
53520-1205-1011
www.climatepartner.com
Date of release: June 2012
Document order number: 9397 750 17272
Printed in the Netherlands
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