BFQ231A-AMMO [NXP]
暂无描述;型号: | BFQ231A-AMMO |
厂家: | NXP |
描述: | 暂无描述 晶体 晶体管 |
文件: | 总8页 (文件大小:67K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ231; BFQ231A
NPN video transistors
Product specification
1997 Oct 02
Supersedes data of November 1995
File under Discrete Semiconductors, SC05
Philips Semiconductors
Product specification
NPN video transistors
BFQ231; BFQ231A
FEATURES
DESCRIPTION
• High breakdown voltages
• Low output capacitance
• High gain bandwidth
NPN video transistor in a SOT54
(TO-92) plastic package.
PNP complements: BFQ251 and
BFQ251A.
1
2
3
page
• Good thermal stability
• Gold metallization ensures
excellent reliability.
MSB033
PINNING
PIN
DESCRIPTION
1
2
3
base
APPLICATIONS
Fig.1 Simplified outline
(SOT54; TO-92).
collector
emitter
• Buffer/driver in high-resolution
colour graphics monitors.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
BFQ231
open emitter
−
−
−
100
V
BFQ231A
−
115
V
VCER
collector-emitter voltage
BFQ231
RBE = 100 Ω
−
−
−
−
−
−
−
−
95
110
300
1
V
BFQ231A
V
IC
collector current (DC)
total power dissipation
DC current gain
transition frequency
BFQ231
mA
W
Ptot
hFE
fT
Ts ≤ 65 °C; note 1
IC = 50 mA; VCE = 10 V
20
35
−
IC = 50 mA; VCE = 10 V; Tamb = 25 °C
1
1.4
1.2
−
−
GHz
GHz
BFQ231A
0.8
Note
1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body.
1997 Oct 02
2
Philips Semiconductors
Product specification
NPN video transistors
BFQ231; BFQ231A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
UNIT
collector-base voltage
BFQ231
−
−
100
V
V
BFQ231A
115
VCEO
collector-emitter voltage
BFQ231
open base
−
−
65
95
V
V
BFQ231A
VCER
collector-emitter voltage
BFQ231
RBE = 100 Ω
−
−
−
−
−
95
V
V
V
BFQ231A
110
3
VEBO
IC
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open collector
300
1
mA
W
Ptot
Tstg
Tj
Ts ≤ 65 °C; notes 1 and 2; see Fig.3
−65
+150
150
°C
°C
−
Notes
1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body.
2. Transistor mounted on a printed-circuit board with a metallized pad area of 10 mm2.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
VALUE
UNIT
K/W
K/W
K/W
thermal resistance from junction to soldering point note 1
thermal resistance from junction to ambient
85
Rth j-a
Rth s-a
185
100
thermal resistance from soldering point to ambient
Note
1. Ts is the temperature at the soldering point of the collector pin.
1997 Oct 02
3
Philips Semiconductors
Product specification
NPN video transistors
BFQ231; BFQ231A
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IC = 0.1 mA; IE = 0
MIN.
TYP. MAX. UNIT
V(BR)CBO collector-base breakdown voltage
BFQ231
100
−
−
−
−
V
V
BFQ231A
115
V(BR)CEO collector-emitter breakdown voltage IC = 10 mA; IB = 0
BFQ231
65
95
−
−
−
−
V
V
BFQ231A
V(BR)CER collector-emitter breakdown voltage IC = 10 mA; RBE = 100 Ω
BFQ231
95
110
3
−
−
V
BFQ231A
−
−
V
V(BR)EBO emitter-base breakdown voltage
IE = 0.1 mA; IC = 0
IB = 0; VCE = 50 V
IE = 0; VCB = 10 V
−
−
V
ICES
ICBO
hFE
collector-emitter cut-off current
collector-base cut-off current
DC current gain
−
−
100
20
−
µA
µA
−
−
IC = 50 mA; VCE = 10 V; see Fig.4 20
35
1.8
Ccb
collector-base capacitance
IC = ic = 0; VCB = 10 V; f = 1 MHz;
see Fig.5
−
−
pF
fT
transition frequency
BFQ231
IC = 50 mA; VCE = 10 V; see Fig.6
1
1.4
1.2
−
−
GHz
GHz
BFQ231A
0.8
MEA225 - 1
MEA228 - 1
400
1.2
handbook, halfpage
handbook, halfpage
P
tot
(W)
1.0
I
C
(mA)
300
0.8
0.6
0.4
0.2
200
100
0
0
0
0
50
100
150
200
20
40
60
80
V
100
(V)
o
T
( C)
s
CEO
Tamb = 25 °C.
Fig.2 DC SOAR.
Fig.3 Power derating curve.
1997 Oct 02
4
Philips Semiconductors
Product specification
NPN video transistors
BFQ231; BFQ231A
MEA224
MEA227
50
6
handbook, halfpage
handbook, halfpage
h
FE
C
cb
(pF)
40
30
20
10
0
4
2
0
0
0
100
200
300
10
20
30
40
I
(mA)
C
V
(V)
CB
VCE = 10 V; Tamb = 25 °C.
f = 1 MHz; Tamb = 25 °C.
Fig.4 DC current gain as a function of
collector current; typical values.
Fig.5 Collector-base capacitance as a function of
collector-base voltage; typical values.
MBB476
1.5
handbook, halfpage
BFQ231
f
T
(GHz)
1.0
BFQ231A
0.5
0
0
100
150
50
I
(mA)
C
VCE = 10 V; Tamb = 25 °C.
Fig.6 Transition frequency as a function of
collector current; typical values.
1997 Oct 02
5
Philips Semiconductors
Product specification
NPN video transistors
BFQ231; BFQ231A
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e
1
e
D
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
UNIT
A
b
b
c
D
d
E
e
e
L
L
1
1
1
5.2
5.0
0.48
0.40
0.66
0.56
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
14.5
12.7
mm
2.54
1.27
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
REFERENCES
OUTLINE
EUROPEAN
ISSUE DATE
PROJECTION
VERSION
IEC
JEDEC
EIAJ
97-02-28
SOT54
TO-92
SC-43
1997 Oct 02
6
Philips Semiconductors
Product specification
NPN video transistors
BFQ231; BFQ231A
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Oct 02
7
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© Philips Electronics N.V. 1997
SCA55
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Printed in The Netherlands
127027/00/03/pp8
Date of release: 1997 Oct 02
Document order number: 9397 750 02881
相关型号:
BFQ231A-T/R
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, BIP RF Small Signal
NXP
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