BFQ232 [NXP]

NPN video transistors; NPN晶体管视频
BFQ232
型号: BFQ232
厂家: NXP    NXP
描述:

NPN video transistors
NPN晶体管视频

晶体 小信号双极晶体管 射频小信号双极晶体管
文件: 总8页 (文件大小:67K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
BFQ232; BFQ232A  
NPN video transistors  
Product specification  
1997 Oct 02  
Supersedes data of November 1995  
File under Discrete Semiconductors, SC05  
Philips Semiconductors  
Product specification  
NPN video transistors  
BFQ232; BFQ232A  
FEATURES  
DESCRIPTION  
page  
High breakdown voltages  
Low output capacitance  
Good thermal stability  
NPN video transistor in a SOT32  
(TO-126) plastic package.  
PNP complements: BFQ252 and  
BFQ252A.  
Gold metallization ensures  
excellent reliability.  
PINNING  
PIN  
DESCRIPTION  
emitter  
APPLICATIONS  
1
2
3
Buffer/driver in high-resolution  
colour graphics monitors.  
1
2
3
Top view  
MBC077 - 1  
collector  
base  
Fig.1 Simplified outline  
(SOT32; TO-126).  
QUICK REFERENCE DATA  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
VCBO  
collector-base voltage  
BFQ232  
open emitter  
100  
V
BFQ232A  
115  
V
VCER  
collector-emitter voltage  
BFQ232  
RBE = 100 Ω  
95  
110  
300  
3
V
BFQ232A  
V
IC  
collector current (DC)  
total power dissipation  
DC current gain  
transition frequency  
BFQ232  
mA  
W
Ptot  
hFE  
fT  
Ts 115 °C; note 1; see Fig.3  
IC = 50 mA; VCE = 10 V; Tamb = 25 °C  
20  
35  
IC = 50 mA; VCE = 10 V; f = 100 MHz;  
T
amb = 25 °C  
1
1.4  
1.2  
GHz  
GHz  
BFQ232A  
0.8  
Note  
1. Ts is the temperature at the soldering point of the collector pin.  
1997 Oct 02  
2
Philips Semiconductors  
Product specification  
NPN video transistors  
BFQ232; BFQ232A  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
VCBO  
PARAMETER  
CONDITIONS  
open emitter  
MIN.  
MAX.  
UNIT  
collector-base voltage  
BFQ232  
100  
V
V
BFQ232A  
115  
VCEO  
collector-emitter voltage  
BFQ232  
open base  
65  
95  
V
V
BFQ232A  
VCER  
collector-emitter voltage  
BFQ232  
RBE = 100 Ω  
95  
V
V
V
BFQ232A  
110  
3
VEBO  
IC  
emitter-base voltage  
collector current (DC)  
total power dissipation  
storage temperature  
junction temperature  
open collector  
300  
3
mA  
W
Ptot  
Tstg  
Tj  
Ts 115 °C; note 1; see Fig.3  
65  
+175  
175  
°C  
°C  
Note  
1. Ts is the temperature at the soldering point of the collector pin.  
THERMAL CHARACTERISTICS  
SYMBOL  
Rth j-s  
Note  
1. Ts is the temperature at the soldering point of the collector pin.  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
K/W  
thermal resistance from junction to soldering point  
Ts 115 °C; note 1  
20  
1997 Oct 02  
3
Philips Semiconductors  
Product specification  
NPN video transistors  
BFQ232; BFQ232A  
CHARACTERISTICS  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
IC = 0.1 mA; IE = 0  
MIN.  
TYP. MAX. UNIT  
V(BR)CBO  
collector-base breakdown voltage  
BFQ232  
100  
V
V
BFQ232A  
115  
V(BR)CEO  
collector-emitter breakdown voltage IC = 10 mA; IB = 0  
BFQ232  
65  
95  
V
V
BFQ232A  
V(BR)CER  
collector-emitter breakdown voltage IC = 10 mA; RBE = 100 Ω  
BFQ232  
95  
110  
3
V
BFQ232A  
V
V(BR)EBO  
ICES  
emitter-base breakdown voltage  
collector-emitter cut-off current  
collector-base cut-off current  
DC current gain  
IE = 0.1 mA; IC = 0  
IB = 0; VCE = 50 V  
IE = 0; VCB = 50 V  
V
100  
20  
µA  
µA  
ICBO  
hFE  
IC = 50 mA; VCE = 10 V;  
20  
35  
Tamb = 25 °C; see Fig.4  
fT  
transition frequency  
BFQ232  
IC = 50 mA; VCE = 10 V;  
f = 100 MHz; Tamb = 25 °C;  
see Fig.6  
1
1.4  
1.2  
2
GHz  
GHz  
pF  
BFQ232A  
0.8  
Ccb  
collector-base capacitance  
IC = 0; VCB = 10 V; f = 1 MHz;  
Tamb = 25 °C; see Fig.5  
MBB880  
MBB895  
400  
4
handbook, halfpage  
handbook, halfpage  
I
P
C
tot  
(mA)  
(W)  
300  
3
200  
100  
2
1
0
0
0
20  
40  
60  
80  
(V)  
0
50  
100  
150  
200  
o
T
( C)  
V
s
CEO  
Fig.2 DC SOAR.  
Fig.3 Power derating curve.  
1997 Oct 02  
4
Philips Semiconductors  
Product specification  
NPN video transistors  
BFQ232; BFQ232A  
MBB434  
MBB879  
6
50  
handbook, halfpage  
handbook, halfpage  
C
cb  
(pF)  
h
FE  
5
40  
4
3
2
30  
20  
1
0
10  
20  
30  
40  
0
100  
200  
300  
I
(mA)  
V
(V)  
C
CB  
VCE = 10 V; Tamb = 25 °C.  
f = 1 MHz; Tamb = 25 °C.  
Fig.4 DC current gain as a function of  
collector current; typical values.  
Fig.5 Collector-base capacitance as a function of  
collector-base voltage; typical values.  
MBB881  
2.0  
handbook, halfpage  
f
T
(GHz)  
1.5  
BFQ232A  
BFQ232  
1.0  
0.5  
0
50  
100  
150  
I
(mA)  
C
VCE = 10 V; f = 100 MHz; Tamb = 25 °C.  
Fig.6 Transition frequency as a function of  
collector current; typical values.  
1997 Oct 02  
5
Philips Semiconductors  
Product specification  
NPN video transistors  
BFQ232; BFQ232A  
PACKAGE OUTLINE  
Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32  
E
A
P
1
P
D
L
1
L
1
2
3
e
b
w
M
c
1
p
e
Q
0
2.5  
scale  
5 mm  
DIMENSIONS (mm are the original dimensions)  
(1)  
L
1
UNIT  
b
c
D
E
e
e
L
Q
P
P
w
A
p
1
1
max  
2.7  
2.3  
0.88  
0.65  
0.60  
0.45  
11.1  
10.5  
7.8  
7.2  
16.5  
15.3  
1.5  
0.9  
3.2  
3.0  
3.9  
3.6  
mm  
2.54  
4.58  
2.29  
0.254  
Note  
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.  
REFERENCES  
OUTLINE  
EUROPEAN  
PROJECTION  
ISSUE DATE  
VERSION  
IEC  
JEDEC  
EIAJ  
97-03-04  
SOT32  
TO-126  
1997 Oct 02  
6
Philips Semiconductors  
Product specification  
NPN video transistors  
BFQ232; BFQ232A  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1997 Oct 02  
7
Philips Semiconductors – a worldwide company  
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Tel. +31 40 27 82785, Fax. +31 40 27 88399  
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Tel. +61 2 9805 4455, Fax. +61 2 9805 4466  
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Fax. +43 160 101 1210  
Norway: Box 1, Manglerud 0612, OSLO,  
Tel. +47 22 74 8000, Fax. +47 22 74 8341  
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Brazil: see South America  
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,  
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Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,  
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Tel. +359 2 689 211, Fax. +359 2 689 102  
Portugal: see Spain  
Romania: see Italy  
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,  
Tel. +1 800 234 7381  
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,  
Tel. +7 095 755 6918, Fax. +7 095 755 6919  
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Colombia: see South America  
Czech Republic: see Austria  
Slovakia: see Austria  
Slovenia: see Italy  
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Hungary: see Austria  
India: Philips INDIA Ltd, Band Box Building, 2nd floor,  
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,  
Tel. +91 22 493 8541, Fax. +91 22 493 0966  
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,  
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874  
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United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,  
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421  
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,  
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Tel. +1 800 234 7381  
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,  
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Uruguay: see South America  
Vietnam: see Singapore  
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,  
Tel. +60 3 750 5214, Fax. +60 3 757 4880  
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,  
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Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,  
Tel. +9-5 800 234 7381  
Middle East: see Italy  
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,  
Internet: http://www.semiconductors.philips.com  
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825  
© Philips Electronics N.V. 1997  
SCA55  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
127027/00/02/pp8  
Date of release: 1997 Oct 02  
Document order number: 9397 750 02882  

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