BFQ34 [NXP]

NPN 4 GHz wideband transistor; NPN 4 GHz宽带晶体管


型号：	BFQ34
厂家：	NXP
描述：	NPN 4 GHz wideband transistor NPN 4 GHz宽带晶体管晶体晶体管放大器
文件：	总10页 (文件大小：77K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DISCRETE SEMICONDUCTORS

DATA SHEET

BFQ34

NPN 4 GHz wideband transistor

September 1995

Product speciﬁcation

File under Discrete Semiconductors, SC14

Philips Semiconductors

Product speciﬁcation

NPN 4 GHz wideband transistor

BFQ34

DESCRIPTION

PINNING

NPN transistor encapsulated in a 4

lead SOT122A envelope with a

ceramic cap. All leads are isolated

from the stud.

DESCRIPTION

Code: BFQ34/01

lfpage

collector

emitter

base

It is primarily intended for driver and

final stages in MATV system

amplifiers. It is also suitable for use in

low power band IV and V equipment.

Diffused emitter-ballasting resistors

and the application of gold sandwich

metallization ensure an optimum

temperature profile and excellent

reliability properties. The device also

features high output voltage

emitter

Top view

MBK187

Fig.1 SOT122A.

capabilities.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

open emitter

TYP.

MAX. UNIT

V_CBO

V_CEO

I_C

collector-base voltage

collector-emitter voltage

collector current

−

150

2.7

−

open base

−

P_tot

f_T

total power dissipation

transition frequency

output voltage

up to T_c= 160 °C

I_C= 150 mA; V_CE= 15 V; f = 500 MHz 4

GHz

V_o

I_C= 120 mA; V_CE= 15 V; R_L= 75 Ω; 1.2

T_amb= 25 °C; d_im= −60 dB

−

f_(p+q-r)= 793.25 MHz

P_L1

ITO

output power at 1 dB gain

compression

I_C= 120 mA; V_CE= 15 V; R_L= 75 Ω; 26

f = 800 MHz; T_amb= 25 °C

−

dBm

third order intercept point

I_C= 120 mA; V_CE= 15 V; R_L= 75 Ω; 45

T_amb= 25 °C

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All

persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 4 GHz wideband transistor

BFQ34

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

collector-base voltage

CONDITIONS

MIN. MAX. UNIT

V_CBO

V_CEO

V_EBO

I_C

open emitter

open base

−

collector-emitter voltage

emitter-base voltage

DC collector current

total power dissipation

storage temperature

junction temperature

open collector

150

2.7

°C

P_tot

T_stg

T_j

up to T_c= 160 °C

−65 150

200

−

THERMAL RESISTANCE

SYMBOL

PARAMETER

THERMAL RESISTANCE

R_{th j-c}

thermal resistance from junction to case

15 K/W

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 4 GHz wideband transistor

BFQ34

CHARACTERISTICS

T_j= 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

collector cut-off current

DC current gain

CONDITIONS

I_E= 0; V_CB= 15 V

MIN. TYP. MAX. UNIT

I_CBO

h_FE

−

100

−

µA

I_C= 75 mA; V_CE= 15 V

I_C= 150 mA; V_CE= 15 V

3.5

−

f_T

transition frequency

I_C= 75 mA; V_CE= 15 V; f = 500 MHz 3

−

GHz

I_C= 150 mA; V_CE= 15 V;

f = 500 MHz

3.5

−

C_c

collector capacitance

emitter capacitance

feedback capacitance

I_E= 0; V_CB= 15 V; f = 1 MHz

I_C= 0; V_EB= 0.5 V; f = 1 MHz

−

2.75 pF

1.35 pF

C_e

C_re

−

I_C= 10 mA; V_CE= 15 V; f = 1 MHz;

T_amb= 25 °C

C_c-s

collector-stud capacitance

noise ﬁgure (see Fig.2)

note 1

−

0.8

−

I_C= 120 mA; V_CE= 15 V;

f = 500 MHz; T_amb= 25 °C

G_UM

maximum unilateral power gain

(note 2)

I_C= 120 mA; V_CE= 15 V;

f = 500 MHz; T_amb= 25 °C

−

16.3

−

V_o

output voltage

Figs 2 and 7 and note 3

note 4

−

1.2

−

P_L1

output power at 1 dB gain

compression (see Fig.2)

dBm

ITO

third order intercept point (see Fig.2) note 5

−

dBm

Notes

1. Measured with grounded emitter and base.

2. G_UMis the maximum unilateral power gain, assuming S₁₂is zero and

S₂₁

--------------------------------------------------------------

G_UM= 10 log

dB.

1 – S₁₁

1 – S₂₂

3. d_im= −60 dB (DIN 45004B, par. 6.3.: 3-tone); I_C= 120 mA; V_CE= 15 V; R_L= 75 Ω; T_amb= 25 °C;

V_p= V_Oat d_im= −60 dB; f_p= 795.25 MHz;

V_q= V_O−6 dB; f_q= 803.25 MHz;

V_r= V_O−6 dB; f_r= 805.25 MHz;

measured at f_(p+q−r)= 793.25 MHz.

4. I_C= 120 mA; V_CE= 15 V; T_amb= 25 °C; R_L= 75 Ω;

measured at f = 800 MHz.

5. I_C= 120 mA; V_CE= 15 V; R_L= 75 Ω; T_amb= 25 °C;

P_p= ITO − 6 dB; f_p= 800 MHz;

P_q= ITO − 6 dB; f_q= 801 MHz;

measured at f_(2q−p)= 802 MHz and at f_(2p−q)= 799 MHz.

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 4 GHz wideband transistor

BFQ34

MBB361

120

handbook, halfpage

2.2 nF

handbook, halfpage

2.2 nF

200 Ω

10 nF

output

75 Ω

10 nF

input

75 Ω

DUT

0.68 pF

24 Ω

120

160

(mA)

MEA322

f = 40 to 860 MHz; L1 = L2 = 5 µH Ferroxcube coil.

V_CE= 15 V; T_j= 25 °C.

Fig.3 DC current gain as a function of collector

current.

Fig.2 Intermodulation distortion MATV test circuit.

MEA320

MBB357

handbook, halfpage

(GHz)

(pF)

120

160

(V)

(mA)

I_E= 0; f = 1 MHz; T_j= 25 °C.

V_CE= 15 V; f = 500 MHz; T_j= 25 °C.

Fig.4 Collector capacitance as a function of

collector-base voltage.

Fig.5 Transition frequency as a function of

collector current.

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 4 GHz wideband transistor

BFQ34

MEA319

MEA321

handbook, halfpage

(dB)

gain

(dB)

–1

100

150

f (GHz)

(mA)

I_c= 120 mA; V_CE= 15 V; T_amb= 25 °C.

V_o= 1.2 V; V_CE= 15 V; f_(p+q−r)= 793.25 MHz

Fig.7 Intermodulation distortion as a function of

collector current.

Fig.6 Gain as a function of frequency.

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 4 GHz wideband transistor

BFQ34

handbook, full pagewidth

0.5

0.2

1200 MHz

1000

800

+ j

– j

0.2

0.5

500

∞

200

0.2

0.5

MEA315

I_c= 120 mA; V_CE= 15 V; T_amb= 25 °C.

Z_o= 50 Ω.

Fig.8 Common emitter input reflection coefficient (S₁₁).

handbook, full pagewidth

90°

120°

60°

200 MHz

150°

30°

500

800

1000

1200

+ ϕ

− ϕ

180°

0°

30°

150°

60°

120°

MEA317

90°

I_c= 120 mA; V_CE= 15 V; T_amb= 25 °C.

Fig.9 Common emitter forward transmission coefficient (S₂₁).

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 4 GHz wideband transistor

BFQ34

90°

handbook, full pagewidth

120°

60°

1200

1000

800

500

150°

30°

+ ϕ

− ϕ

200 MHz

0.1

0.2

180°

0°

30°

150°

60°

120°

MEA318

90°

I_c= 120 mA; V_CE= 15 V; T_amb= 25 °C.

Fig.10 Common emitter reverse transmission coefficient (S₁₂).

handbook, full pagewidth

0.5

0.2

+ j

– j

0.2

0.5

∞

800

1000

1200

500

200 MHz

0.2

0.5

MEA316

I_c= 120 mA; V_CE= 15 V; T_amb= 25 °C.

Z_o= 50 Ω.

Fig.11 Common emitter output reflection coefficient (S₂₂).

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 4 GHz wideband transistor

BFQ34

PACKAGE OUTLINE

Studded ceramic package; 4 leads

SOT122A

ceramic

BeO

metal

detail X

10 mm

scale

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

UNIT

max.

8-32

UNC

5.97

4.74

5.85

5.58

0.18

0.14

7.50

7.23

6.48

6.22

7.24 27.56 9.91

6.93 25.78 9.14

3.18

2.66

1.66

1.39

11.82

11.04

3.86

2.92

3.38

2.74

0.381

90°

1.02

REFERENCES

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

JEDEC

EIAJ

97-04-18

SOT122A

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 4 GHz wideband transistor

BFQ34

DEFINITIONS

Data Sheet Status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

September 1995

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