BFQ540 [NXP]

NPN wideband dual transistor; NPN宽带双晶体管


型号：	BFQ540
厂家：	NXP
描述：	NPN wideband dual transistor NPN宽带双晶体管晶体晶体管
文件：	总8页 (文件大小：75K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D109

BFQ540

NPN wideband dual transistor

1998 Aug 27

Product speciﬁcation

Supersedes data of 1995 Sep 04

File under Discrete Semiconductors, SC14

Philips Semiconductors

Product speciﬁcation

NPN wideband dual transistor

BFQ540

FEATURES

DESCRIPTION

• High gain

NPN wideband dual transistor in a

plastic SOT89 package.

• High output voltage

• Low noise

page

PINNING

• Gold metallization ensures

excellent reliability

DESCRIPTION

emitter

• Low thermal resistance.

Bottom view

MBK514

collector

base

APPLICATIONS

• VHF, UHF and CATV amplifiers.

Marking code: N4.

Fig.1 SOT89.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

collector-base voltage

collector-emitter voltage

collector-base voltage

collector current (DC)

total power dissipation

DC current gain

CONDITIONS

MIN.

TYP. MAX. UNIT

V_CBO

V_CES

V_EBO

I_C

open emitter

R_BE= 0

−

open collector

−

120

1.2

250

−

P_tot

h_FE

f_T

T_s≤ 60 °C; note 1

−

I_C= 40 mA; V_CE= 8 V; T_j= 25 °C

−

120

transition frequency

I_C= 40 mA; V_CE= 8 V; f = 1 GHz;

T_amb= 25 °C

GHz

insertion power gain

noise ﬁgure

I_C= 40 mA; V_CE= 8 V;

f = 900 MHz; T_amb= 25 °C

−

S₂₁

I_C= 40 mA; V_CE= 8 V;

−

1.9

2.4

f = 900 MHz; Γ_S= Γ_opt

Note

1. T_sis the temperature at the soldering point of the collector pin.

1998 Aug 27

Philips Semiconductors

Product speciﬁcation

NPN wideband dual transistor

BFQ540

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN. MAX. UNIT

V_CBO

V_CES

V_EBO

I_C

collector-base voltage

collector-emitter voltage

emitter-base voltage

open emitter

R_BE= 0

−

open collector

−

collector current (DC)

total power dissipation

storage temperature

−

120

1.2

P_tot

T_stg

T_j

T_s≤ 60 °C

−

−65

−

+150 °C

operating junction temperature

175

°C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R_{th j-s}

thermal resistance from junction

to soldering point

T_s≤ 60 °C; P_tot= 1.2 W

K/W

MBG241

MBG244

1.4

handbook, halfpage

tot

(W)

1.2

(mA)

1.0

0.8

0.6

0.4

0.2

100

150

200

T ( C)

(V)

V_CE≤ 9 V.

Fig.2 Power derating curve.

Fig.3 SOAR.

1998 Aug 27

Philips Semiconductors

Product speciﬁcation

NPN wideband dual transistor

BFQ540

CHARACTERISTICS

T_j= 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

V_(BR)CBOcollector-base breakdown voltage

open emitter; I_C= 10 µA; I_E= 0

−

V_(BR)CES

collector-emitter breakdown voltage R_BE= 0; I_C= 40 µA

−

V_(BR)EBOemitter-base breakdown voltage

I_E= 100 µA; I_C= 0

V_CB= 8 V; I_E= 0

−

I_CBO

I_EBO

h_FE

f_T

collector-base leakage current

emitter-base leakage current

DC current gain

−

200

250

−

V_CB= 1 V; I_C= 0

−

I_C= 40 mA; V_CE= 8 V

−

120

transition frequency

I_C= 40 mA; V_CE= 8 V;

f_m= 1 GHz

GHz

C_e

emitter capacitance

feedback capacitance

insertion power gain

I_C= i_e= 0; V_EB= 0.5 V; f = 1 MHz

I_C= 0; V_CE= 8 V; f = 1 MHz

−

C_re

−

0.9

I_C= 40 mA; V_CE= 8 V;

f = 900 MHz; T_amb= 25 °C

S₂₁

V_o

output voltage

note 1

note 2

note 3

−

500

350

−

d₂

second order intermodulation

distortion

−53

noise ﬁgure

I_C= 40 mA; V_CE= 8 V;

−

1.9

2.4

f = 900 MHz; Γ_S= Γ_opt

Notes

1. d_im= −60 dB (DIN45004B); V_CE= 8 V; I_C= 40 mA; R_L= 50 Ω;

V_p= V_o; V_q= V_o−6 dB; V_r= V_o−6 dB;

f_p= 795.25 MHz; f_q= 803.25 MHz; f_r= 805.5 MHz;

measured at f_p+ f_q− f_r= 793.25 MHz.

2. d_im= −60 dB (DIN 45004B); I_C= 40 mA; V_CE= 8 V; R_L= 50 Ω;

V_p= V_q= V_o; f_p= 806 MHz; f_q= 810 MHz;

measured at 2f_p− f_q= 802 MHz.

3. I_C= 40 mA; V_CE= 8 V; R_L= 50 Ω;

V_p= V_q= 225 mV; f_p= 250 MHz; f_q= 560 MHz;

measured at f_p+ f_q= 810 MHz.

1998 Aug 27

Philips Semiconductors

Product speciﬁcation

NPN wideband dual transistor

BFQ540

MRA688

MRA689

1.0

handbook, halfpage

(pF)

(GHz)

0.8

= 8V

= 4V

0.6

0.4

0.2

−1

(V)

(mA)

I_C= 0; f = 1 MHz.

f = 1 GHz; T_amb= 25 °C.

Fig.4 Feedback capacitance as a function of

collector-base voltage; typical values.

Fig.5 Transition frequency as a function of

collector current; typical values.

MBG242

MBG243

handbook, halfpage

(dB)

(mA)

V_CE= 8 V; V_o= 475 mV; R_L= 50 Ω.

f_p+ f_q− f_r= 793.25 MHz; T_amb= 25 °C.

V_CE= 8 V; V_o= 225 mV; R_L= 50 Ω; f_p+ f_q= 810 MHz; T_amb= 25 °C.

Fig.6 Intermodulation distortion as a function of

collector current; typical values.

Fig.7 Second order intermodulation distortion as

a function of collector current; typical values.

1998 Aug 27

Philips Semiconductors

Product speciﬁcation

NPN wideband dual transistor

BFQ540

PACKAGE OUTLINE

Plastic surface mounted package; collector pad for good heat transfer; 3 leads

SOT89

4 mm

scale

DIMENSIONS (mm are the original dimensions)

min.

UNIT

1.6

1.4

0.48

0.35

0.53

0.40

1.8

1.4

0.44

0.37

4.6

4.4

2.6

2.4

4.25

3.75

3.0

1.5

0.8

0.13

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

EIAJ

SOT89

97-02-28

1998 Aug 27

Philips Semiconductors

Product speciﬁcation

NPN wideband dual transistor

BFQ540

DEFINITIONS

Data sheet status

Objective speciﬁcation

Preliminary speciﬁcation

Product speciﬁcation

Short-form speciﬁcation

This data sheet contains target or goal speciﬁcations for product development.

This data sheet contains preliminary data; supplementary data may be published later.

This data sheet contains ﬁnal product speciﬁcations.

The data in this speciﬁcation is extracted from a full data sheet with the same type

number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

1998 Aug 27

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SCA60

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

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Printed in The Netherlands

125104/00/02/pp8

Date of release: 1998 Aug 27

Document order number: 9397 750 04296

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