BFQ67TT/R [NXP]
TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SC-75, 3 PIN, BIP RF Small Signal;
| 型号： | BFQ67TT/R |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SC-75, 3 PIN, BIP RF Small Signal 放大器 光电二极管 晶体管 |
| 文件： | 总12页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ67T
NPN 8 GHz wideband transistor
Product specification
2000 Mar 06
Supersedes data of 1999 Nov 02
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67T
FEATURES
DESCRIPTION
• High power gain
NPN transistor in a plastic SOT416
(SC-75) package.
• Low noise figure
3
page
• High transition frequency
PINNING
• Gold metallization ensures
excellent reliability
PIN
DESCRIPTION
1
2
• SOT416 (SC-75) envelope.
1
2
3
base
Top view
MBK090
emitter
APPLICATIONS
collector
Wideband applications such as
satellite TV tuners and RF portable
communications equipment up to
2 GHz.
Marking code: V2.
Fig.1 SOT416.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
IC
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
open emitter
open base
−
−
20
10
50
150
−
V
−
−
−
−
V
−
mA
mW
Ptot
hFE
fT
Ts ≤ 75 °C; note 1
−
IC = 15 mA; VCE = 5 V; Tj = 25 °C 60
100
8
transition frequency
IC = 15 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 °C
−
−
−
−
GHz
dB
GUM
maximum unilateral power gain
noise figure
IC = 15 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
13
−
−
F
IC = 5 mA; VCE = 8 V; f = 1 GHz
1.3
dB
Note
1. Ts is the temperature at the soldering point of the collector pin.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
MIN.
MAX.
20
UNIT
−
−
−
−
−
V
V
V
VCEO
VEBO
IC
open base
10
open collector
2.5
50
mA
mW
°C
Ptot
Tstg
Tj
Ts ≤ 75 °C; note 1
150
+150
150
−65
−
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
2000 Mar 06
2
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67T
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
UNIT
500
K/W
CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
IE = 0; VCB = 5 V
MIN.
TYP. MAX. UNIT
collector cut-off current
DC current gain
−
−
50
−
nA
hFE
Cc
Ce
Cre
fT
IC = 15 mA; VCE = 5 V
60
−
100
0.7
1.3
0.5
8
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
IE = ie = 0; VCB = 8 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCE = 8 V; f = 1 MHz
IC = 15 mA; VCE = 8 V; f = 2 GHz;
−
pF
−
−
pF
−
−
pF
−
−
GHz
Tamb = 25 °C
GUM
maximum unilateral power gain
IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; note 1
f = 1 GHz
−
−
13
8
−
−
dB
dB
f = 2 GHz
F
noise figure
Γs = Γopt; IC = 5 mA; VCE = 8 V;
f = 1 GHz
−
−
1.3
2.2
−
−
dB
dB
f = 2 GHz
Γs = Γopt; IC = 15 mA; VCE = 8 V;
f = 1 GHz
−
−
2
−
−
dB
dB
f = 2 GHz
2.7
VCE = 8 V; f = 2 GHz; Zs = 60 Ω;
IC = 5 mA
−
−
2.5
3
−
−
dB
dB
IC = 15 mA
Note
2
S21
----------------------------------------------------------
1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM = 10 log
dB
2
(1 – S11 2)(1 – S22
)
2000 Mar 06
3
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67T
MGU068
MBB301
200
120
handbook, halfpage
P
tot
h
(mW)
FE
150
80
40
100
50
0
0
0
0
50
100
150
200
20
40
60
I
(mA)
T
(°C)
C
s
VCE = 5 V; Tj = 25 °C.
Fig.3 DC current gain as a function of collector
current.
Fig.2 Power derating curve.
MBB303
MRC039
10
0.8
handbook, halfpage
handbook, halfpage
f
T
C
re
(GHz)
8
(pF)
0.6
6
4
2
0
0.4
0.2
0
0
0
10
20
30
40
4
8
12
V
(V)
I
(mA)
CB
C
IC = 0; f = 1 MHz.
VCE = 8 V; f = 2 GHz; Tamb = 25 °C.
Fig.4 Feedback capacitance as a function of
collector-base voltage.
Fig.5 Transition frequency as a function of
collector current.
2000 Mar 06
4
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67T
In Figs 6 to 9, GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain.
MRC042
MRC040
20
50
handbook, halfpage
handbook, halfpage
gain
(dB)
40
gain
(dB)
G
UM
MSG
15
10
5
G
max
G
UM
30
20
10
0
MSG
G
max
0
0
−2
−1
5
10
15
20
25
30
(mA)
35
10
10
1
10
f (GHz)
I
C
VCE = 8 V; f = 1 GHz; Tamb = 25 °C.
IC = 5 mA; VCE = 8 V; Tamb = 25 °C.
Fig.6 Gain as a function of collector current.
Fig.7 Gain as a function of frequency.
MRC043
MRC041
50
50
handbook, halfpage
gain
handbook, halfpage
gain
(dB)
(dB)
40
G
UM
40
G
UM
30
20
10
0
30
20
10
0
MSG
MSG
G
max
G
max
−2
−1
−2
−1
10
10
1
10
10
10
1
10
f (GHz)
f (GHz)
IC = 15 mA; VCE = 8 V; Tamb = 25 °C.
IC = 30 mA; VCE = 8 V; Tamb = 25 °C.
Fig.8 Gain as a function of frequency.
Fig.9 Gain as a function of frequency.
2000 Mar 06
5
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67T
MRC044
4
handbook, halfpage
F
(dB)
3
2
1
0
2
1
10
10
I
(mA)
C
VCE = 8 V; f = 1 GHz.
Fig.10 Minimum noise figure as a function of
collector current.
90°
1.0
0.8
0.6
0.4
0.2
0
1
135°
45°
2
0.5
F
= 1.5 dB
opt
min
1
0.2
5
0.2
0.5
2
5
180°
0
0°
F = 2 dB
F = 2.5 dB
F = 3 dB
5
0.2
0.5
2
−45°
−135°
1
MRC046
1.0
−90°
IC = 5 mA; VCE = 8 V;
f = 1 GHz; Zo = 50 Ω.
Fig.11 Noise circle.
6
2000 Mar 06
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67T
90°
1.0
0.8
0.6
0.4
0.2
0
1
135°
45°
2
0.5
0.2
5
3 GHz
0.2
0.5
1
2
5
180°
0
0°
40 MHz
5
0.2
0.5
2
−45°
−135°
1
MRC047
1.0
−90°
IC = 15 mA; VCE = 8 V; Zo = 50 Ω.
Fig.12 Common emitter input reflection coefficient (S11).
90°
135°
45°
40 MHz
3 GHz
0°
180°
50
40
30
20
10
−45°
−135°
MRC048
−90°
IC = 15 mA; VCE = 8 V.
Fig.13 Common emitter forward transmission coefficient (S21).
7
2000 Mar 06
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67T
90°
135°
45°
3 GHz
40 MHz
0°
180°
0.5
0.4
0.3
0.2
0.1
−45°
−135°
MRC049
−90°
IC = 15 mA; VCE = 8 V.
Fig.14 Common emitter reverse transmission coefficient (S12).
90°
1.0
0.8
0.6
0.4
0.2
0
1
135°
45°
2
0.5
0.2
5
0.2
0.5
1
2
5
180°
0
0°
40 MHz
5
3 GHz
0.2
0.5
2
−45°
−135°
1
MRC050
1.0
−90°
IC = 15 mA; VCE = 8 V; Zo = 50 Ω.
Fig.15 Common emitter output reflection coefficient (S22).
8
2000 Mar 06
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67T
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT416
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
1
2
c
e
1
b
p
w
M
B
L
p
e
detail X
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
A
UNIT
b
c
D
E
e
e
H
L
p
Q
v
w
p
1
E
max
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
1.75
1.45
0.45
0.15
0.23
0.13
0.95
0.60
mm
0.1
1
0.5
0.2
0.2
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT416
SC-75
2000 Mar 06
9
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67T
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
2000 Mar 06
10
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67T
NOTES
2000 Mar 06
11
Philips Semiconductors – a worldwide company
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For all other countries apply to: Philips Semiconductors,
Internet: http://www.semiconductors.philips.com
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
69
SCA
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
603508/02/pp12
Date of release: 2000 Mar 06
Document order number: 9397 750 06716
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