BFR106 [NXP]
NPN 5 GHz wideband transistor; NPN 5 GHz宽带晶体管
| 型号： | BFR106 |
| 厂家： | 
NXP |
| 描述： | NPN 5 GHz wideband transistor |
| 文件： | 总8页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFR106
NPN 5 GHz wideband transistor
September 1995
Product specification
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
DESCRIPTION
PINNING
PIN
NPN silicon planar epitaxial transistor
in a plastic SOT23 envelope. It is
primarily intended for low noise,
general RF applications.
DESCRIPTION
age
3
Code: R7p
1
2
3
base
emitter
collector
1
2
Top view
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCBO
VCEO
IC
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
open emitter
open base
−
−
−
−
−
20
15
100
500
−
V
−
V
−
mA
mW
Ptot
hFE
fT
up to Ts = 70 °C; note 1
−
IC = 50 mA; VCE = 9 V; Tamb = 25 °C 25
80
5
transition frequency
IC = 50 mA; VCE = 9 V; f = 500 MHz;
Tamb = 25 °C
−
−
−
−
GHz
dB
GUM
Vo
maximum unilateral power gain
output voltage
IC = 30 mA; VCE = 6 V; f = 800 MHz;
Tamb = 25 °C
11.5
350
−
−
IC = 50 mA; VCE = 9 V; RL = 75 Ω;
Tamb = 25 °C; dim = −60 dB;
f(p+q−r) = 793.25 MHz
mV
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
MIN.
MAX.
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
20
V
open base
15
V
open collector
3
V
100
500
150
175
mA
mW
°C
°C
Ptot
Tstg
Tj
up to Ts = 70 °C; note 1
−65
−
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
thermal resistance from junction to
soldering point
up to Ts = 70 °C; note 1
210 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
DC current gain
CONDITIONS
IE = 0; VCB = 10 V
MIN. TYP. MAX. UNIT
−
−
100
−
nA
hFE
fT
IC = 50 mA; VCE = 9 V
25
−
80
5
transition frequency
IC = 50 mA; VCE = 9 V; f = 500 MHz;
−
GHz
Tamb = 25 °C
Cc
collector capacitance
emitter capacitance
feedback capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCE = 10 V; f = 1 MHz
−
−
−
−
1.5
4.5
1.2
11.5
−
−
−
−
pF
pF
pF
dB
Ce
Cre
GUM
maximum unilateral power gain IC = 30 mA; VCE = 6 V; f = 800 MHz;
(note 1)
Tamb = 25 °C
F
noise figure
IC = 30 mA; VCE = 6 V; f = 800 MHz;
Tamb = 25 °C
−
−
−
3.5
−
−
−
dB
dB
mV
d2
second order intermodulation
distortion
note 2
note 3
−50
350
Vo
output voltage
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S21
2
--------------------------------------------------------------
GUM = 10 log
dB.
2
1 – S11
1 – S22
2. IC = 30 mA; VCE = 6 V; RL = 75 Ω; Tamb = 25 °C;
f(p+q) = 810 MHz; Vo = 100 mV.
3. dim = −60 dB (DIN 45004B); IC = 50 mA; VCE = 9 V; RL = 75 Ω; Tamb = 25 °C; f(p+q−r) = 793.25 MHz.
September 1995
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
MBB774
MEA398 - 1
120
600
handbook, halfpage
P
tot
(mW)
h
FE
80
40
400
200
0
0
0
40
80
120
0
50
100
150
200
o
( C)
I
(mA)
T
C
s
VCE = 9 V; Tamb = 25 °C.
Fig.2 Power derating curve.
Fig.3 DC current gain as a function of collector
current.
MBB773
MEA399
8
40
handbook, halfpage
handbook, halfpage
f
G
T
UM
(GHz)
6
(dB)
30
4
2
20
10
0
0
0
2
4
3
40
80
120
10
10
10
10
I
(mA)
f (MHz)
C
VCE = 9 V; f = 500 MHz; Tj = 25 °C.
IC = 30 mA; VCE = 6 V; Tamb = 25 °C.
Fig.5 Maximum unilateral power gain as a
function of frequency.
Fig.4 Transition frequency as a function of
collector current.
September 1995
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
1
0.5
2
0.2
2000 MHz
1500
5
1200
1000
0.2
10
+ j
– j
800
0.5
1
2
5
10
500
0
∞
200
10
100
5
0.2
40 MHz
2
0.5
MEA400
1
IC = 30 mA; VCE = 6 V; Tamb = 25 °C.
Zo = 50 Ω.
Fig.6 Common emitter input reflection coefficient (S11).
90°
120°
60°
150°
30°
40 MHz
100
500
800
200
1000
1200
1500
+ ϕ
− ϕ
50 40
30
20
10
180°
0°
2000 MHz
30°
150°
60°
120°
MEA403
90°
IC = 30 mA; VCE = 6 V; Tamb = 25 °C.
Fig.7 Common emitter forward transmission coefficient (S21).
September 1995
5
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
90°
120°
60°
2000 MHz
1500
150°
30°
1200
800
1000
500
+ ϕ
− ϕ
200
0.5 0.4
0.3
0.2
0.1
100
180°
0°
40 MHz
30°
150°
60°
120°
MEA402
90°
IC = 30 mA; VCE = 6 V; Tamb = 25 °C.
Fig.8 Common emitter reverse transmission coefficient (S12).
1
0.5
2
0.2
5
10
800 MHz
0.5
+ j
– j
0.2
1
2
5
10
0
∞
500
200
10
5
0.2
100
40 MHz
2
0.5
MEA401
1
IC = 30 mA; VCE = 6 V; Tamb = 25 °C.
Zo = 50 Ω.
Fig.9 Common emitter output reflection coefficient (S22).
September 1995
6
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
September 1995
7
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR106
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
8
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