BFR520T/R [NXP]
TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SST, 3 PIN, BIP RF Small Signal;
| 型号： | BFR520T/R |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SST, 3 PIN, BIP RF Small Signal 放大器 光电二极管 晶体管 |
| 文件： | 总13页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFR520
NPN 9 GHz wideband transistor
Rev. 03 — 1 September 2004
Product data sheet
1. Product profile
1.1 General description
The BFR520 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package.
1.2 Features
■ High power gain
■ Low noise figure
■ High transition frequency
■ Gold metallization ensures excellent reliability.
1.3 Applications
■ RF front end wideband applications in the GHz range
◆ Analog and digital cellular telephones
◆ Cordless telephones (CT1, CT2, DECT, etc.)
◆ Radar detectors
◆ Pagers and satellite TV tuners (SATV)
◆ Repeater amplifiers in fiber-optic systems.
1.4 Quick reference data
Table 1:
Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max
20
Unit
V
VCBO
VCES
collector-base voltage
-
-
-
-
collector-emitter
voltage
RBE = 0 Ω
15
V
IC
collector current (DC)
-
-
70
300
250
-
mA
[1]
Ptot
hFE
Cre
total power dissipation up to Tsp = 97 °C
DC current gain IC = 20 mA; VCE = 6 V
-
-
mW
60
-
120
0.4
feedback capacitance IC = ic = 0 A; VCB = 6 V;
f = 1 MHz
pF
fT
transition frequency
IC = 20 mA; VCE = 6 V;
f = 1 GHz
-
9
-
GHz
GUM
maximum unilateral
power gain
IC = 20 mA; VCE = 6 V;
T
amb = 25 °C
f = 900 MHz
f = 2 GHz
-
-
15
9
-
-
dB
dB
BFR520
Philips Semiconductors
NPN 9 GHz wideband transistor
Table 1:
Quick reference data …continued
Symbol Parameter
Conditions
Min
Typ
Max
Unit
2
s21
insertion power gain
IC = 20 mA; VCE = 6 V;
13
14
-
dB
T
amb = 25 °C;
f = 900 MHz
NF
noise figure
Γs = Γopt; Tamb = 25 °C
IC = 5 mA; VCE = 6 V;
f = 900 MHz
-
-
-
1.1
1.6
1.9
1.6
2.1
-
dB
dB
dB
IC = 20 mA;VCE = 6 V;
f = 900 MHz
IC = 5 mA; VCE = 8 V;
f = 2 GHz
[1] Tsp is the temperature at the soldering point of the collector tab.
2. Pinning information
Table 2:
Pinning
Pin
1
Description
base
Simplified outline
Symbol
3
3
2
emitter
3
collector
1
2
1
2
sym021
SOT23
3. Ordering information
Table 3:
Ordering information
Type number Package
Name
Description
Version
BFR520
-
plastic surface mounted package; 3 leads
SOT23
4. Marking
Table 4:
Marking
Type number
Marking code[1]
BFR520
32*
[1] * = p: Made in Hong Kong
* = t: Made in Malaysia
* = W: Made in China.
9397 750 13397
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 1 September 2004
2 of 13
BFR520
Philips Semiconductors
NPN 9 GHz wideband transistor
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCES
VEBO
IC
Parameter
Conditions
open emitter
RBE = 0 Ω
Min
Max
20
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
-
-
15
V
open collector
-
2.5
70
V
-
mA
mW
°C
°C
[1]
Ptot
up to Tsp = 97 °C
-
300
150
175
Tstg
−65
Tj
-
[1] Tsp is the temperature at the soldering point of the collector tab.
6. Thermal characteristics
Table 6:
Thermal characteristics
Symbol Parameter
Conditions
Typ Unit
[1]
Rth(j-s)
thermal resistance from junction to soldering point
260 K/W
[1] Tsp is the temperature at the soldering point of the collector tab.
7. Characteristics
Table 7:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter Conditions
Min
Typ
Max
Unit
ICBO
collector cut-off IE = 0 A; VCB = 6 V
current
-
-
50
nA
hFE
Ce
DC current gain IC = 20 mA; VCE = 6 V
60
-
120
1
250
-
emitter
IC = ic = 0 A; VEB = 0.5 V;
f = 1 MHz
pF
capacitance
Cc
collector
capacitance
IE = ie = 0 A; VCB = 6 V;
f = 1 MHz
-
-
-
0.5
0.4
9
-
-
-
pF
Cre
fT
feedback
capacitance
IC = 0 A; VCB = 6 V;
f = 1 MHz
pF
transition
frequency
IC = 20 mA; VCE = 6 V;
f = 1 GHz
GHz
[1]
GUM
maximum
IC = 20 mA; VCE = 6 V;
unilateral power Tamb = 25 °C
gain
f = 900 MHz
-
15
9
-
-
-
dB
dB
dB
f = 2 GHz
-
2
s21
insertion power IC = 20 mA; VCE = 6 V;
13
14
gain
Tamb = 25 °C; f = 900 MHz
9397 750 13397
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 1 September 2004
3 of 13
BFR520
Philips Semiconductors
NPN 9 GHz wideband transistor
Table 7:
Characteristics …continued
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
NF
noise figure
Γs = Γopt; VCE = 6 V;
T
amb = 25 °C
IC = 5 mA; f = 900 MHz
IC = 20 mA; f = 900 MHz
IC = 5 mA; f = 2 GHz
-
-
-
-
1.1
1.6
1.9
17
1.6
2.1
-
dB
dB
dB
PL(1dB)
output power at IC = 20 mA; VCE = 6 V;
-
dBm
1 dB gain
RL = 50 Ω; Tamb = 25 °C;
compression
f = 900 MHz
[2]
ITO
third order
-
26
-
dBm
intercept point
[1] GUM is the maximum unilateral power gain, assuming s12 is zero and
2
s
21
G
= 10 log
dB.
2
-----------------------------------------------------
UM
2
(1 – s
)(1 – s
)
22
11
[2]
IC = 20 mA; VCE = 6 V; RL = 50 Ω; Tamb = 25 °C; fp = 900 MHz; fq = 902 MHz
Measured at f(2p−q) = 898 MHz and f(2q−p) = 904 MHz.
mra702
mra703
250
400
P
tot
h
FE
(mW)
200
300
150
100
50
200
100
0
0
10
−2
−1
2
10
1
10
10
0
50
100
150
200
I
(mA)
T
(°C)
C
sp
VCE = 6 V.
Fig 1. Power derating curve.
Fig 2. DC current gain as a function of collector
current.
9397 750 13397
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 1 September 2004
4 of 13
BFR520
Philips Semiconductors
NPN 9 GHz wideband transistor
mra704
mra705
0.6
12
C
re
f
T
V
= 6 V
3 V
CE
(pF)
(GHz)
0.4
8
0.2
4
0
0
10
−1
2
0
4
8
12
1
10
10
I (mA)
C
V
(V)
CB
IC = 0 A; f = 1 MHz.
Tamb = 25 °C; f = 1 GHz.
Fig 3. Feedback capacitance as a function of
collector-base voltage.
Fig 4. Transition frequency as a function of collector
current.
mra707
mra706
25
25
gain
(dB)
gain
(dB)
20
15
20
MSG
G
max
G
UM
15
10
5
G
max
10
5
G
UM
0
0
0
10
20
30
0
10
20
30
I (mA)
C
I
(mA)
C
VCE = 6 V; f = 900 MHz.
VCE = 6 V; f = 2 GHz.
Fig 5. Gain as a function of collector current;
f = 900 MHz.
Fig 6. Gain as a function of collector current;
f = 2 GHz.
9397 750 13397
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 1 September 2004
5 of 13
BFR520
Philips Semiconductors
NPN 9 GHz wideband transistor
mra708
mra709
50
50
gain
(dB)
40
gain
(dB)
G
UM
G
UM
40
MSG
MSG
30
20
10
0
30
20
10
0
G
G
max
max
2
3
4
2
3
4
10
10
10
10
10
10
10
10
f (MHz)
f (MHz)
VCE = 6 V; IC = 5 mA.
VCE = 6 V; IC = 20 mA.
Fig 7. Gain as a function of frequency; IC = 5 mA.
Fig 8. Gain as a function of frequency; IC = 20 mA.
mra714
mra715
5
4
3
2
20
5
4
3
2
20
I (mA)
C
G
G
ass
F
F
ass
min
min
(dB)
15
(dB)
15
(dB)
(dB)
f (MHz)
5
20
900
1000
G
ass
G
ass
10
5
10
5
2000
2000
F
min
1000
900
500
20
5
F
min
0
0
1
0
1
0
−5
10
−5
2
2
3
4
1
10
10
10
10
I
(mA)
f (MHz)
C
VCE = 6 V.
VCE = 6 V.
Fig 9. Minimum noise figure and associated available
gain as functions of collector current.
Fig 10. Minimum noise figure and associated available
gain as functions of frequency.
9397 750 13397
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 1 September 2004
6 of 13
BFR520
Philips Semiconductors
NPN 9 GHz wideband transistor
stability
circle
90°
+1
1.0
0.8
135°
+0.2
45°
+2
+0.5
pot. unst.
region
0.6
0.4
F
= 1.1 dB
min
+5
0.2
0
Γ
OPT
0
0.2
0.5
1
2
5
0°
180°
F = 1.5 dB
F = 2 dB
F = 3 dB
−5
−0.2
−2
−0.5
−135°
−45°
−1
1.0
mra716
−90°
Zo = 50 Ω; VCE = 6 V; IC = 5 mA; f = 900 MHz.
Fig 11. Noise circle figure; f = 900 MHz.
90°
+1
1.0
0.8
0.6
0.4
0.2
0
135°
+0.5
45°
+2
F = 3 dB
F = 2.5 dB
+0.2
F = 2 dB
= 1. 9 dB
+5
F
min
Γ
MS
Γ
OPT
1
0
0.2
0.5
2
5
0°
180°
G
= 9.3 dB
max
G = 9 dB
−5
−0.2
G = 8 dB
G = 7 dB
−2
−0.5
−135°
−45°
−1
1.0
mra717
−90°
Zo = 50 Ω; VCE = 6 V; IC = 5 mA; f = 2000 MHz.
Fig 12. Noise circle figure; f = 2000 MHz.
9397 750 13397
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 1 September 2004
7 of 13
BFR520
Philips Semiconductors
NPN 9 GHz wideband transistor
90°
+1
1.0
0.8
135°
+0.2
45°
+2
+0.5
0.6
0.4
+5
0.2
3 GHz
0
0.2
0.5
1
2
5
10
40 MHz
−5
0°
0
180°
−0.2
−2
−0.5
−135°
−45°
−1
1.0
mra710
−90°
VCE = 6 V; IC = 20 mA; Zo = 50 Ω.
Fig 13. Common emitter input reflection coefficient (s11).
90°
135°
45°
40 MHz
3 GHz
180°
0°
50
40
30
20
10
0
−135°
−45°
mra711
−90°
VCE = 6 V; IC = 20 mA.
Fig 14. Common emitter forward transmission coefficient (s21).
9397 750 13397
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 1 September 2004
8 of 13
BFR520
Philips Semiconductors
NPN 9 GHz wideband transistor
90°
135°
45°
3 GHz
40 MHz
180°
0°
0.5
0.4
0.3
0.2
0.1
0
−135°
−45°
mra712
−90°
VCE = 6 V; IC = 20 mA.
Fig 15. Common emitter reverse transmission coefficient (s12).
90°
+1
1.0
0.8
0.6
0.4
0.2
0
135°
45°
+0.5
+2
+0.2
+5
0
0.2
0.5
1
2
5
10
0°
180°
40 MHz
3 GHz
−5
−0.2
−2
−0.5
−135°
−45°
−1
1.0
mra713
−90°
VCE = 6 V; IC = 20 mA; Zo = 50 Ω.
Fig 16. Common emitter output reflection coefficient (s22).
9397 750 13397
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 1 September 2004
9 of 13
BFR520
Philips Semiconductors
NPN 9 GHz wideband transistor
8. Package outline
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
Fig 17. Package outline SOT23 (TO-236AB).
9397 750 13397
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 1 September 2004
10 of 13
BFR520
Philips Semiconductors
NPN 9 GHz wideband transistor
9. Revision history
Table 8:
Revision history
Document ID
BFR520_3
Release date Data sheet status
20040901 Product data sheet
Change notice Doc. number
Supersedes
-
9397 750 13397 BFR520_CNV_2
Modifications:
• The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
• Table 4 “Marking”: Format of marking code changed.
BFR520_CNV_2
19971204
Product specification
-
not applicable
-
9397 750 13397
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 1 September 2004
11 of 13
BFR520
Philips Semiconductors
NPN 9 GHz wideband transistor
10. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
12. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 13397
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 03 — 1 September 2004
12 of 13
BFR520
Philips Semiconductors
NPN 9 GHz wideband transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information . . . . . . . . . . . . . . . . . . . . 12
3
4
5
6
7
8
9
10
11
12
13
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 1 September 2004
Document number: 9397 750 13397
Published in The Netherlands
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