BFR53 [NXP]
NPN 2 GHz wideband transistor; NPN 2 GHz的宽带晶体管
| 型号： | BFR53 |
| 厂家： | 
NXP |
| 描述： | NPN 2 GHz wideband transistor |
| 文件： | 总12页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFR53
NPN 2 GHz wideband transistor
1997 Oct 28
Product specification
Supersedes data of September 1995
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFR53
FEATURES
PINNING
PIN
page
3
• Very low intermodulation distortion
• Very high power gain.
DESCRIPTION
1
2
3
base
emitter
APPLICATIONS
collector
1
2
• Thick and thin-film circuits.
Top view
MSB003
Marking code: N1.
DESCRIPTION
Fig.1 SOT23.
NPN wideband transistor in a plastic
SOT23 package.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
18
UNIT
VCBO
VCEO
ICM
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
feedback capacitance
open emitter
open base
f > 1 MHz
−
V
V
−
10
−
100
250
−
mA
mW
pF
Ptot
Ts ≤ 85 °C
−
Cre
IC = 2 mA; VCE = 5 V; f = 1 MHz;
0.9
Tamb = 25 °C
fT
transition frequency
IC = 25 mA; VCE = 5 V; f = 500 MHz;
Tj = 25 °C
2
−
−
GHz
dB
GUM
maximum unilateral power gain IC = 30 mA; VCE = 5 V; f = 800 MHz;
amb = 25 °C
10.5
T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
−
18
V
−
10
V
open collector
−
2.5
50
V
−
mA
mA
mW
°C
°C
ICM
f > 1 MHz
−
100
250
+150
150
Ptot
Tstg
Tj
Ts ≤ 85 °C (note 1)
−
−65
−
Note
1. Ts is the temperature at the soldering point of the collector pin.
1997 Oct 28
2
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFR53
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point Ts ≤ 85 °C; note 1
260
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector cut-off current
DC current gain
CONDITIONS
IE = 0; VCB = 10 V
MIN.
TYP. MAX. UNIT
ICBO
hFE
−
−
50
−
nA
IC = 25 mA; VCE = 5 V; see Fig.2
IC = 50 mA; VCE = 5 V; see Fig.2
25
25
−
−
−
−
Cc
collector capacitance
IE = ie = 0; VCB = 5 V; f = 1 MHz;
see Fig.3
0.9
−
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
−
1.5
0.9
−
−
pF
pF
Cre
feedback capacitance
IC = 2 mA; VCE = 5 V; f = 1 MHz;
Tamb = 25 °C
fT
transition frequency
IC = 25 mA; VCE = 5 V; f = 500 MHz;
see Fig.4
−
−
−
2
−
−
5
GHz
dB
GUM
F
maximum unilateral power gain IC = 30 mA; VCE = 5 V; f = 800 MHz;
(note 1)
10.5
−
Tamb = 25 °C; see Fig.5
noise figure
IC = 2 mA; VCE = 5 V; f = 500 MHz;
dB
Tamb = 25 °C; see Fig.6
Note
2
S21
2
˙
1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM = 10 log
dB .
--------------------------------------------------------------
2
1 – S11
1 – S22
1997 Oct 28
3
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFR53
MEA458
MEA457
100
2.0
handbook, halfpage
handbook, halfpage
C
c
(pF)
h
FE
90
80
1.6
1.2
0.8
0.4
0
70
60
50
0
50
100
0
4
8
12
16
20
I
(mA)
C
(V)
V
CB
VCE = 5 V; Tj = 25 °C.
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
Fig.2 DC current gain as a function of collector
current; typical values.
Fig.3 Collector capacitance as a function of
collector-base voltage; typical values.
MEA455
MEA459
30
2.2
handbook, halfpage
handbook, halfpage
gain
(dB)
f
T
(GHz)
20
10
0
1.8
G
1.4
1.0
UM
2
I S
3
I
12
2
4
0
25
50
10
10
10
I
(mA)
f (MHz)
C
VCE = 5 V; f = 500 MHz; Tj = 25 °C.
IC = 30 mA; VCE = 5 V; Tamb = 25 °C.
Fig.4 Transition frequency as a function of
collector current; typical values.
Fig.5 Gain as a function of frequency;
typical values.
1997 Oct 28
4
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFR53
MEA460
MEA456
50
10
handbook, halfpage
handbook, halfpage
B
S
F
(dB)
3.5
3.3
F = 5.5 dB
(mS)
5.0
4.5
4.0
0
5
0
−50
0
10
20
30
40
0
20
40
60
80
G
100
(mS)
I
(mA)
C
S
VCE = 5 V; f = 500 MHz; GS = 20 mS; BS is tuned; Tamb = 25 °C.
IC = 2 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 °C.
Fig.6 Minimum noise figure as a function of
collector current; typical values.
Fig.7 Circles of constant noise figure; typical values.
1997 Oct 28
5
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFR53
1
0.5
2
0.2
5
1000 MHz
800
500
300
100
10
+ j
– j
0.2
0.5
1
2
5
10
0
∞
10
5
0.2
2
0.5
MEA461
1
IC = 30 mA; VCE = 5 V; Zo = 50 Ω; Tamb = 25 °C.
Fig.8 Common emitter input reflection coefficient (S11).
o
90
o
o
60
120
100
o
o
150
30
300
500
ϕ
ϕ
o
o
0
1000 MHz
180
25
15
5
o
o
30
150
o
o
60
120
o
MEA463
90
IC = 30 mA; VCE = 5 V; Tamb = 25 °C.
Fig.9 Common emitter forward transmission coefficient (S21).
6
1997 Oct 28
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFR53
o
90
o
o
120
60
1000 MHz
800
o
o
150
30
500
300
ϕ
ϕ
100
o
o
0
180
0.05
0.10
0.15
o
o
30
150
o
o
60
120
o
MEA464
90
IC = 30 mA; VCE = 5 V; Tamb = 25 °C.
Fig.10 Common emitter reverse transmission coefficient (S12).
1
0.5
2
0.2
5
10
+ j
– j
0.2
0.5
1
2
5
10
0
∞
800
500
300
100
10
1000
MHz
5
0.2
2
0.5
MEA462
1
IC = 30 mA; VCE = 5 V; Zo = 50 Ω; Tamb = 25 °C.
Fig.11 Common emitter output reflection coefficient (S22).
7
1997 Oct 28
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFR53
PACKAGE OUTLINES
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
1997 Oct 28
8
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFR53
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Short-form specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Oct 28
9
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFR53
NOTES
1997 Oct 28
10
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFR53
NOTES
1997 Oct 28
11
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© Philips Electronics N.V. 1997
SCA55
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Printed in The Netherlands
127127/00/02/pp12
Date of release: 1997 Oct 28
Document order number: 9397 750 02896
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