BFR54 概述
NPN 9 GHz wideband transistor NPN 9 GHz宽带晶体管 射频小信号双极晶体管
BFR54 规格参数
生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.78 |
最大集电极电流 (IC): | 0.1 A | 基于收集器的最大容量: | 4 pF |
集电极-发射极最大电压: | 15 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 40 | 最高频带: | VERY HIGH FREQUENCY BAND |
JEDEC-95代码: | TO-92 | JESD-30 代码: | O-PBCY-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 490 MHz |
VCEsat-Max: | 0.25 V | Base Number Matches: | 1 |
BFR54 数据手册
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DATA SHEET
BFR540
NPN 9 GHz wideband transistor
Product specification
1999 Aug 23
Supersedes data of 1995 September
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
FEATURES
The transistor is encapsulated in a
plastic SOT23 envelope.
• High power gain
• Low noise figure
PINNING
• High transition frequency
page
3
PIN
DESCRIPTION
Code: N29
base
• Gold metallization ensures
excellent reliability.
1
2
3
1
2
DESCRIPTION
emitter
Top view
MSB003
collector
The BFR540 is an npn silicon planar
epitaxial transistor, intended for
applications in the RF frontend in
wideband applications in the GHz
range, such as analog and digital
cellular telephones, cordless
telephones (CT1, CT2, DECT, etc.),
radar detectors, satellite TV tuners
(SATV), MATV/CATV amplifiers and
repeater amplifiers in fibre-optic
systems.
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCBO
VCES
IC
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
open emitter
RBE = 0
−
−
20
15
120
500
250
−
V
−
−
V
−
−
mA
mW
Ptot
hFE
Cre
up to Ts = 70 °C; note 1
−
−
IC = 40 mA; VCE = 8 V
60
−
120
0.6
9
feedback capacitance
transition frequency
IC = ic = 0; VCB = 8 V; f = 1 MHz
IC = 40 mA; VCE = 8 V; f = 1 GHz
pF
fT
−
−
GHz
dB
GUM
maximum unilateral
power gain
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
−
14
−
IC = 40 mA; VCE = 8 V;
−
7
−
dB
dB
dB
dB
dB
Tamb = 25 °C; f = 2 GHz
2
S21
insertion power gain
noise figure
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
12
−
13
1.3
1.9
2.1
−
F
Γs = Γopt; IC = 10 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
1.8
2.4
−
Γs = Γopt; IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
−
Γs = Γopt; IC = 10 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
−
Note
1. Ts is the temperature at the soldering point of the collector tab.
1999 Aug 23
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
20
UNIT
VCBO
VCES
VEBO
IC
−
−
−
−
−
V
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
RBE = 0
15
V
open collector
2.5
120
500
150
175
V
mA
mW
°C
°C
Ptot
Tstg
Tj
up to Ts = 70 °C; note 1
−65
−
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
from junction to soldering point
see note 1
260 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
1999 Aug 23
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IE = 0; VCB = 8 V
MIN. TYP. MAX. UNIT
ICBO
hFE
Ce
collector cut-off current
DC current gain
−
−
50
250
−
nA
IC = 40 mA; VCE = 8 V
60
−
120
2
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IE = ie = 0; VCB = 8 V; f = 1 MHz
IC = 0; VCB = 8 V; f = 1 MHz
IC = 40 mA; VCE = 8 V; f = 1 GHz
pF
Cc
−
0.9
0.6
9
−
pF
Cre
fT
−
−
pF
−
−
GHz
dB
GUM
maximum unilateral
power gain (note 1)
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
−
14
−
IC = 40 mA; VCE = 8 V;
−
7
−
dB
Tamb = 25 °C; f = 2 GHz
2
S21
insertion power gain
noise figure
IC = 40 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
12
−
13
1.3
1.9
2.1
21
−
dB
F
Γs = Γopt; IC = 10 mA; VCE = 8 V;
Tamb = 25 °C; f = 900 MHz
1.8
2.4
−
dB
Γs = Γopt; IC = 40 mA; VCE = 8 V;
−
dB
Tamb = 25 °C; f = 900 MHz
Γs = Γopt; IC = 10 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
−
dB
PL1
output power at 1 dB gain
compression
IC = 40 mA; VCE = 8 V; RL = 50 Ω;
Tamb = 25 °C; f = 900 MHz
−
−
dBm
ITO
Vo
third order intercept point
output voltage (note 3)
note 2
−
−
34
−
−
dBm
mV
IC = 40 mA; VCE = 8 V;
550
ZL = ZS = 75 Ω; Tamb = 25 °C
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S21
----------------------------------------------------------
GUM = 10 log
dB.
(1 – S11 2)(1 – S22
)
2
2. IC = 40 mA; VCE = 8 V; RL = 50 Ω;
Tamb = 25 °C; f = 900 MHz;
fp = 900 MHz; fq = 902 MHz;
measured at f(2p−q) = 898 MHz and f(2q−p) = 904 MHz.
3. dim = −60 dB (DIN 45004B);
Vp = VO; Vq = VO −6 dB; f p = 795.25 MHz;
VR = VO −6 dB; fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(p+q-r) = 793.25 MHz; preliminary data.
1999 Aug 23
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
MRA687
MEA398 - 1
600
250
handbook, halfpage
h
FE
P
tot
(mW)
200
150
100
50
400
200
0
0
−2
10
−1
2
0
50
100
150
200
o
( C)
10
1
10
10
I
(mA)
C
T
s
VCE = 8 V.
Fig.3 DC current gain as a function of collector
current.
Fig.2 Power derating curve.
MRA688
MRA689
12
1.0
handbook, halfpage
handbook, halfpage
C
re
(pF)
f
T
(GHz)
0.8
V
V
= 8V
= 4V
CE
CE
8
4
0
0.6
0.4
0.2
0
0
4
8
12
−1
2
V
(V)
10
1
10
10
CB
I
(mA)
C
Tamb = 25 °C; f = 1 GHz.
IC = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage.
Fig.5 Transition frequency as a function of
collector current.
1999 Aug 23
5
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
In Figs 6 to 9, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
MRA690
MRA691
25
25
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
20
20
15
10
5
G
MSG
max
15
10
5
G
UM
G
max
G
UM
0
0
0
0
20
40
60
20
40
60
I
(mA)
I
(mA)
C
C
VCE = 8 V; f = 900 MHz.
VCE = 8 V; f = 2 GHz.
Fig.6 Gain as a function of collector current.
Fig.7 Gain as a function of collector current.
MRA692
MRA693
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
G
UM
G
40
40
UM
MSG
MSG
30
30
20
10
0
20
10
0
G
G
max
max
2
4
3
2
4
3
10
10
10
10
10
10
10
10
f (MHz)
f (MHz)
VCE = 8 V; Ic = 40 mA.
VCE = 8 V; Ic = 10 mA.
Fig.8 Gain as a function of frequency.
Fig.9 Gain as a function of frequency.
1999 Aug 23
6
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
MRA698
MRA699
5
20
5
20
handbook, halfpage
handbook, halfpage
I
= 10 mA
C
40 mA
G
G
F
F
ass
(dB)
15
ass
min
(dB)
min
(dB)
(dB)
15
4
4
f = 900 MHz
G
ass
1000 MHz
2000 MHz
10
5
10
5
3
2
1
3
2
G
F
ass
2000 MHz
min
40 mA
10 mA
1000 MHz
900 MHz
500 MHz
F
min
0
0
1
0
0
1
−5
−5
2
4
2
3
10
10
10
10
10
I
(mA)
f (MHz)
C
VCE = 8 V.
VCE = 8 V.
Fig.10 Minimum noise figure and associated
available gain as functions of collector
current.
Fig.11 Minimum noise figure and associated
available gain as functions of frequency.
90°
1.0
1
0.8
135°
45°
2
0.5
0.6
pot. unst.
region
0.2
0.4
F
= 1.3 dB
min
5
Γ
OPT
1
0.2
0.2
0.5
2
5
180°
0°
0
0
F = 1.5 dB
stability
circle
F = 2 dB
5
0.2
F = 3 dB
0.5
2
−45°
−135°
1
MRA700
1.0
−90°
Zo = 50 Ω.
VCE = 8 V; IC = 10 mA; f = 900 MHz.
Fig.12 Noise circle figure.
7
1999 Aug 23
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
90°
1.0
0.8
0.6
0.4
0.2
0
1
135°
45°
2
0.5
G = 5 dB
G = 6 dB
G = 7 dB
0.5
5
G
= 7.8 dB
max
Γ
MS
0.2
1
2
5
180°
0°
0
F
= 2.1 dB
min
Γ
OPT
5
0.2
F = 2.5 dB
F = 3 dB
F = 4 dB
0.5
2
−45°
−135°
1
MRA701
1.0
−90°
Zo = 50 Ω.
VCE = 8 V; IC = 10 mA; f = 2000 MHz.
Fig.13 Noise circle figure.
1999 Aug 23
8
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
90°
1.0
0.8
0.6
0.4
0.2
0
1
135°
45°
2
0.5
0.2
5
3 GHz
0.2
0.5
1
2
5
180°
0°
0
5
0.2
40 MHz
0.5
2
−45°
−135°
1
MRA694
1.0
VCE = 8 V; IC = 40 mA.
−90°
Zo = 50 Ω.
Fig.14 Common emitter input reflection coefficient (S11).
90°
135°
45°
40 MHz
3 GHz
180°
0°
50
40
30
20
10
−135°
−45°
MRA695
−90°
VCE = 8 V; IC = 40 mA.
Fig.15 Common emitter forward transmission coefficient (S21).
9
1999 Aug 23
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
90°
135°
45°
3 GHz
40 MHz
180°
0°
0.5
0.4
0.3
0.2
0.1
−135°
−45°
MRA696
−90°
VCE = 8 V; IC = 40 mA.
Fig.16 Common emitter reverse transmission coefficient (S12).
90°
1.0
0.8
0.6
0.4
0.2
0
1
135°
45°
2
0.5
0.2
5
0.2
0.5
1
2
5
180°
0°
0
3 GHz
40 MHz
5
0.2
0.5
2
−45°
−135°
1
MRA697
1.0
−90°
VCE = 8 V; IC = 40 mA.
Zo = 50 Ω.
Fig.17 Common emitter output reflection coefficient (S22).
10
1999 Aug 23
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
p
c
D
E
e
e
H
L
Q
v
w
A
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
1999 Aug 23
11
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 Aug 23
12
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
NOTES
1999 Aug 23
13
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
NOTES
1999 Aug 23
14
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFR540
NOTES
1999 Aug 23
15
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67
SCA
© Philips Electronics N.V. 1999
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Printed in The Netherlands
125006/03/pp16
Date of release: 1999 Aug 23
Document order number: 9397 750 06338
BFR54 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
BFR54(AMMOPAK) | NXP | RF Small Signal Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-92 | 获取价格 | |
BFR54(BOX) | NXP | RF Small Signal Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-92 | 获取价格 | |
BFR54(TAPE-REEL) | NXP | RF Small Signal Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, TO-92 | 获取价格 | |
BFR540 | NXP | NPN 9 GHz wideband transistor | 获取价格 | |
BFR540 | ISC | isc Silicon NPN RF Transistor | 获取价格 | |
BFR540,235 | NXP | BFR540 - NPN 9 GHz wideband transistor TO-236 3-Pin | 获取价格 | |
BFR540/T1 | ETC | TRANSISTOR UHF BIPOLAR BREITBAND | 获取价格 | |
BFR540T/R | NXP | TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, SOT-23, 3 PIN, BIP RF Small Signal | 获取价格 | |
BFR540TRL | NXP | 暂无描述 | 获取价格 | |
BFR540TRL13 | NXP | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR | 获取价格 |
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