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BFR540TRL [NXP]

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BFR540TRL
型号： BFR540TRL
厂家： NXP    NXP
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晶体 小信号双极晶体管 射频小信号双极晶体管 光电二极管 放大器
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DISCRETE SEMICONDUCTORS  
DATA SHEET  
BFR540  
NPN 9 GHz wideband transistor  
Product specification  
1999 Aug 23  
Supersedes data of 1995 September  
Philips Semiconductors  
Product specification  
NPN 9 GHz wideband transistor  
BFR540  
FEATURES  
The transistor is encapsulated in a  
plastic SOT23 envelope.  
• High power gain  
• Low noise figure  
PINNING  
• High transition frequency  
page  
3
PIN  
DESCRIPTION  
Code: N29  
base  
• Gold metallization ensures  
excellent reliability.  
1
2
3
1
2
DESCRIPTION  
emitter  
Top view  
MSB003  
collector  
The BFR540 is an npn silicon planar  
epitaxial transistor, intended for  
applications in the RF frontend in  
wideband applications in the GHz  
range, such as analog and digital  
cellular telephones, cordless  
telephones (CT1, CT2, DECT, etc.),  
radar detectors, satellite TV tuners  
(SATV), MATV/CATV amplifiers and  
repeater amplifiers in fibre-optic  
systems.  
Fig.1 SOT23.  
QUICK REFERENCE DATA  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
VCBO  
VCES  
IC  
collector-base voltage  
collector-emitter voltage  
DC collector current  
total power dissipation  
DC current gain  
open emitter  
RBE = 0  
−
−
20  
15  
120  
500  
250  
−
V
−
−
V
−
−
mA  
mW  
Ptot  
hFE  
Cre  
up to Ts = 70 °C; note 1  
−
−
IC = 40 mA; VCE = 8 V  
60  
−
120  
0.6  
9
feedback capacitance  
transition frequency  
IC = ic = 0; VCB = 8 V; f = 1 MHz  
IC = 40 mA; VCE = 8 V; f = 1 GHz  
pF  
fT  
−
−
GHz  
dB  
GUM  
maximum unilateral  
power gain  
IC = 40 mA; VCE = 8 V;  
Tamb = 25 °C; f = 900 MHz  
−
14  
−
IC = 40 mA; VCE = 8 V;  
−
7
−
dB  
dB  
dB  
dB  
dB  
Tamb = 25 °C; f = 2 GHz  
2
S21  
insertion power gain  
noise figure  
IC = 40 mA; VCE = 8 V;  
Tamb = 25 °C; f = 900 MHz  
12  
−
13  
1.3  
1.9  
2.1  
−
F
Γs = Γopt; IC = 10 mA; VCE = 8 V;  
Tamb = 25 °C; f = 900 MHz  
1.8  
2.4  
−
Γs = Γopt; IC = 40 mA; VCE = 8 V;  
Tamb = 25 °C; f = 900 MHz  
−
Γs = Γopt; IC = 10 mA; VCE = 8 V;  
Tamb = 25 °C; f = 2 GHz  
−
Note  
1. Ts is the temperature at the soldering point of the collector tab.  
1999 Aug 23  
2
Philips Semiconductors  
Product specification  
NPN 9 GHz wideband transistor  
BFR540  
LIMITING VALUES  
In accordance with the Absolute Maximum System (IEC 134).  
SYMBOL  
PARAMETER  
collector-base voltage  
CONDITIONS  
open emitter  
MIN.  
MAX.  
20  
UNIT  
VCBO  
VCES  
VEBO  
IC  
−
−
−
−
−
V
collector-emitter voltage  
emitter-base voltage  
DC collector current  
total power dissipation  
storage temperature  
junction temperature  
RBE = 0  
15  
V
open collector  
2.5  
120  
500  
150  
175  
V
mA  
mW  
°C  
°C  
Ptot  
Tstg  
Tj  
up to Ts = 70 °C; note 1  
−65  
−
THERMAL RESISTANCE  
SYMBOL  
PARAMETER  
CONDITIONS  
THERMAL RESISTANCE  
Rth j-s  
from junction to soldering point  
see note 1  
260 K/W  
Note  
1. Ts is the temperature at the soldering point of the collector tab.  
1999 Aug 23  
3
Philips Semiconductors  
Product specification  
NPN 9 GHz wideband transistor  
BFR540  
CHARACTERISTICS  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
IE = 0; VCB = 8 V  
MIN. TYP. MAX. UNIT  
ICBO  
hFE  
Ce  
collector cut-off current  
DC current gain  
−
−
50  
250  
−
nA  
IC = 40 mA; VCE = 8 V  
60  
−
120  
2
emitter capacitance  
collector capacitance  
feedback capacitance  
transition frequency  
IC = ic = 0; VEB = 0.5 V; f = 1 MHz  
IE = ie = 0; VCB = 8 V; f = 1 MHz  
IC = 0; VCB = 8 V; f = 1 MHz  
IC = 40 mA; VCE = 8 V; f = 1 GHz  
pF  
Cc  
−
0.9  
0.6  
9
−
pF  
Cre  
fT  
−
−
pF  
−
−
GHz  
dB  
GUM  
maximum unilateral  
power gain (note 1)  
IC = 40 mA; VCE = 8 V;  
Tamb = 25 °C; f = 900 MHz  
−
14  
−
IC = 40 mA; VCE = 8 V;  
−
7
−
dB  
Tamb = 25 °C; f = 2 GHz  
2
S21  
insertion power gain  
noise figure  
IC = 40 mA; VCE = 8 V;  
Tamb = 25 °C; f = 900 MHz  
12  
−
13  
1.3  
1.9  
2.1  
21  
−
dB  
F
Γs = Γopt; IC = 10 mA; VCE = 8 V;  
Tamb = 25 °C; f = 900 MHz  
1.8  
2.4  
−
dB  
Γs = Γopt; IC = 40 mA; VCE = 8 V;  
−
dB  
Tamb = 25 °C; f = 900 MHz  
Γs = Γopt; IC = 10 mA; VCE = 8 V;  
Tamb = 25 °C; f = 2 GHz  
−
dB  
PL1  
output power at 1 dB gain  
compression  
IC = 40 mA; VCE = 8 V; RL = 50 Ω;  
Tamb = 25 °C; f = 900 MHz  
−
−
dBm  
ITO  
Vo  
third order intercept point  
output voltage (note 3)  
note 2  
−
−
34  
−
−
dBm  
mV  
IC = 40 mA; VCE = 8 V;  
550  
ZL = ZS = 75 Ω; Tamb = 25 °C  
Notes  
1. GUM is the maximum unilateral power gain, assuming S12 is zero and  
2
S21  
----------------------------------------------------------  
GUM = 10 log  
dB.  
(1 – S11 2)(1 – S22  
)
2
2. IC = 40 mA; VCE = 8 V; RL = 50 Ω;  
Tamb = 25 °C; f = 900 MHz;  
fp = 900 MHz; fq = 902 MHz;  
measured at f(2p−q) = 898 MHz and f(2q−p) = 904 MHz.  
3. dim = −60 dB (DIN 45004B);  
Vp = VO; Vq = VO −6 dB; f p = 795.25 MHz;  
VR = VO −6 dB; fq = 803.25 MHz; fr = 805.25 MHz;  
measured at f(p+q-r) = 793.25 MHz; preliminary data.  
1999 Aug 23  
4
Philips Semiconductors  
Product specification  
NPN 9 GHz wideband transistor  
BFR540  
MRA687  
MEA398 - 1  
600  
250  
handbook, halfpage  
h
FE  
P
tot  
(mW)  
200  
150  
100  
50  
400  
200  
0
0
−2  
10  
−1  
2
0
50  
100  
150  
200  
o
( C)  
10  
1
10  
10  
I
(mA)  
C
T
s
VCE = 8 V.  
Fig.3 DC current gain as a function of collector  
current.  
Fig.2 Power derating curve.  
MRA688  
MRA689  
12  
1.0  
handbook, halfpage  
handbook, halfpage  
C
re  
(pF)  
f
T
(GHz)  
0.8  
V
V
= 8V  
= 4V  
CE  
CE  
8
4
0
0.6  
0.4  
0.2  
0
0
4
8
12  
−1  
2
V
(V)  
10  
1
10  
10  
CB  
I
(mA)  
C
Tamb = 25 °C; f = 1 GHz.  
IC = 0; f = 1 MHz.  
Fig.4 Feedback capacitance as a function of  
collector-base voltage.  
Fig.5 Transition frequency as a function of  
collector current.  
1999 Aug 23  
5
Philips Semiconductors  
Product specification  
NPN 9 GHz wideband transistor  
BFR540  
In Figs 6 to 9, GUM = maximum unilateral power gain;  
MSG = maximum stable gain; Gmax = maximum available  
gain.  
MRA690  
MRA691  
25  
25  
handbook, halfpage  
handbook, halfpage  
gain  
(dB)  
gain  
(dB)  
20  
20  
15  
10  
5
G
MSG  
max  
15  
10  
5
G
UM  
G
max  
G
UM  
0
0
0
0
20  
40  
60  
20  
40  
60  
I
(mA)  
I
(mA)  
C
C
VCE = 8 V; f = 900 MHz.  
VCE = 8 V; f = 2 GHz.  
Fig.6 Gain as a function of collector current.  
Fig.7 Gain as a function of collector current.  
MRA692  
MRA693  
50  
50  
handbook, halfpage  
handbook, halfpage  
gain  
(dB)  
gain  
(dB)  
G
UM  
G
40  
40  
UM  
MSG  
MSG  
30  
30  
20  
10  
0
20  
10  
0
G
G
max  
max  
2
4
3
2
4
3
10  
10  
10  
10  
10  
10  
10  
10  
f (MHz)  
f (MHz)  
VCE = 8 V; Ic = 40 mA.  
VCE = 8 V; Ic = 10 mA.  
Fig.8 Gain as a function of frequency.  
Fig.9 Gain as a function of frequency.  
1999 Aug 23  
6
Philips Semiconductors  
Product specification  
NPN 9 GHz wideband transistor  
BFR540  
MRA698  
MRA699  
5
20  
5
20  
handbook, halfpage  
handbook, halfpage  
I
= 10 mA  
C
40 mA  
G
G
F
F
ass  
(dB)  
15  
ass  
min  
(dB)  
min  
(dB)  
(dB)  
15  
4
4
f = 900 MHz  
G
ass  
1000 MHz  
2000 MHz  
10  
5
10  
5
3
2
1
3
2
G
F
ass  
2000 MHz  
min  
40 mA  
10 mA  
1000 MHz  
900 MHz  
500 MHz  
F
min  
0
0
1
0
0
1
−5  
−5  
2
4
2
3
10  
10  
10  
10  
10  
I
(mA)  
f (MHz)  
C
VCE = 8 V.  
VCE = 8 V.  
Fig.10 Minimum noise figure and associated  
available gain as functions of collector  
current.  
Fig.11 Minimum noise figure and associated  
available gain as functions of frequency.  
90°  
1.0  
1
0.8  
135°  
45°  
2
0.5  
0.6  
pot. unst.  
region  
0.2  
0.4  
F
= 1.3 dB  
min  
5
Γ
OPT  
1
0.2  
0.2  
0.5  
2
5
180°  
0°  
0
0
F = 1.5 dB  
stability  
circle  
F = 2 dB  
5
0.2  
F = 3 dB  
0.5  
2
−45°  
−135°  
1
MRA700  
1.0  
−90°  
Zo = 50 Ω.  
VCE = 8 V; IC = 10 mA; f = 900 MHz.  
Fig.12 Noise circle figure.  
7
1999 Aug 23  
Philips Semiconductors  
Product specification  
NPN 9 GHz wideband transistor  
BFR540  
90°  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1
135°  
45°  
2
0.5  
G = 5 dB  
G = 6 dB  
G = 7 dB  
0.5  
5
G
= 7.8 dB  
max  
Γ
MS  
0.2  
1
2
5
180°  
0°  
0
F
= 2.1 dB  
min  
Γ
OPT  
5
0.2  
F = 2.5 dB  
F = 3 dB  
F = 4 dB  
0.5  
2
−45°  
−135°  
1
MRA701  
1.0  
−90°  
Zo = 50 Ω.  
VCE = 8 V; IC = 10 mA; f = 2000 MHz.  
Fig.13 Noise circle figure.  
1999 Aug 23  
8
Philips Semiconductors  
Product specification  
NPN 9 GHz wideband transistor  
BFR540  
90°  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1
135°  
45°  
2
0.5  
0.2  
5
3 GHz  
0.2  
0.5  
1
2
5
180°  
0°  
0
5
0.2  
40 MHz  
0.5  
2
−45°  
−135°  
1
MRA694  
1.0  
VCE = 8 V; IC = 40 mA.  
−90°  
Zo = 50 Ω.  
Fig.14 Common emitter input reflection coefficient (S11).  
90°  
135°  
45°  
40 MHz  
3 GHz  
180°  
0°  
50  
40  
30  
20  
10  
−135°  
−45°  
MRA695  
−90°  
VCE = 8 V; IC = 40 mA.  
Fig.15 Common emitter forward transmission coefficient (S21).  
9
1999 Aug 23  
Philips Semiconductors  
Product specification  
NPN 9 GHz wideband transistor  
BFR540  
90°  
135°  
45°  
3 GHz  
40 MHz  
180°  
0°  
0.5  
0.4  
0.3  
0.2  
0.1  
−135°  
−45°  
MRA696  
−90°  
VCE = 8 V; IC = 40 mA.  
Fig.16 Common emitter reverse transmission coefficient (S12).  
90°  
1.0  
0.8  
0.6  
0.4  
0.2  
0
1
135°  
45°  
2
0.5  
0.2  
5
0.2  
0.5  
1
2
5
180°  
0°  
0
3 GHz  
40 MHz  
5
0.2  
0.5  
2
−45°  
−135°  
1
MRA697  
1.0  
−90°  
VCE = 8 V; IC = 40 mA.  
Zo = 50 Ω.  
Fig.17 Common emitter output reflection coefficient (S22).  
10  
1999 Aug 23  
Philips Semiconductors  
Product specification  
NPN 9 GHz wideband transistor  
BFR540  
PACKAGE OUTLINE  
Plastic surface mounted package; 3 leads  
SOT23  
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M  
B
L
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
b
p
c
D
E
e
e
H
L
Q
v
w
A
p
1
E
max.  
1.1  
0.9  
0.48  
0.38  
0.15  
0.09  
3.0  
2.8  
1.4  
1.2  
2.5  
2.1  
0.45  
0.15  
0.55  
0.45  
mm  
0.1  
1.9  
0.95  
0.2  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
97-02-28  
SOT23  
1999 Aug 23  
11  
Philips Semiconductors  
Product specification  
NPN 9 GHz wideband transistor  
BFR540  
DEFINITIONS  
Data Sheet Status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1999 Aug 23  
12  
Philips Semiconductors  
Product specification  
NPN 9 GHz wideband transistor  
BFR540  
NOTES  
1999 Aug 23  
13  
Philips Semiconductors  
Product specification  
NPN 9 GHz wideband transistor  
BFR540  
NOTES  
1999 Aug 23  
14  
Philips Semiconductors  
Product specification  
NPN 9 GHz wideband transistor  
BFR540  
NOTES  
1999 Aug 23  
15  
Philips Semiconductors – a worldwide company  
Argentina: see South America  
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,  
Tel. +31 40 27 82785, Fax. +31 40 27 88399  
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Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474  
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United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,  
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421  
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,  
Tel. +82 2 709 1412, Fax. +82 2 709 1415  
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,  
Tel. +1 800 234 7381, Fax. +1 800 943 0087  
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,  
Tel. +60 3 750 5214, Fax. +60 3 757 4880  
Uruguay: see South America  
Vietnam: see Singapore  
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,  
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087  
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,  
Middle East: see Italy  
Tel. +381 11 62 5344, Fax.+381 11 63 5777  
For all other countries apply to: Philips Semiconductors,  
Internet: http://www.semiconductors.philips.com  
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,  
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825  
67  
SCA  
© Philips Electronics N.V. 1999  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
125006/03/pp16  
Date of release: 1999 Aug 23  
Document order number: 9397 750 06338  

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