BFR92AT [NXP]
NPN 5 GHz wideband transistor; NPN 5 GHz宽带晶体管
| 型号： | BFR92AT |
| 厂家： | 
NXP |
| 描述： | NPN 5 GHz wideband transistor |
| 文件： | 总16页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
313
BFR92AT
NPN 5 GHz wideband transistor
Product specification
2000 Mar 28
Supersedes data of 1999 Nov 02
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
FEATURES
DESCRIPTION
• High power gain
Silicon NPN transistor encapsulated
in a plastic SOT416 (SC-75) package.
The BFR92AT uses the same crystal
as the SOT23 version: BFR92A.
3
page
• Gold metallization ensures
excellent reliability
• SOT416 (SC-75) package.
1
2
PINNING
Top view
MBK090
APPLICATIONS
PIN
1
DESCRIPTION
RF amplifiers, mixers and oscillators
with signal frequencies up to 1 GHz.
Marking code: P2.
base
2
emitter
Fig.1 SOT416.
3
collector
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
IC
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
collector-base voltage
open emitter
−
−
20
15
25
150
−
V
collector-emitter voltage open base
collector current (DC)
−
−
V
−
−
mA
mW
Ptot
total power dissipation
current gain
up to Ts = 75 °C; note 1
−
−
hFE
IC = 15 mA; VCE = 10 V
40
−
90
0.35
5
Cre
feedback capacitance
transition frequency
IC = 0; VCE = 10 V; f = 1 MHz; Tamb = 25 °C
−
pF
fT
IC = 15 mA; VCE = 10 V; f = 500 MHz
3.5
−
−
GHz
dB
GUM
maximum unilateral
power gain
IC = 15 mA; VCE = 10 V; f = 1 GHz;
14
−
Tamb = 25 °C
IC = 15 mA; VCE = 10 V; f = 2 GHz;
−
8
−
dB
Tamb = 25 °C
F
noise figure
IC = 5 mA; VCE = 10 V; f = 1 GHz; Γs = Γopt
−
−
2
−
dB
Tj
junction temperature
−
150
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
2000 Mar 28
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
20
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
open emitter
−
−
−
−
−
V
V
V
collector-emitter voltage open base
15
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open collector
2
25
mA
mW
°C
Ptot
Tstg
Tj
up to Ts = 75 °C; see Fig.2; note 1
150
+150
150
−65
−
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
500
K/W
MGU068
200
P
tot
(mW)
150
100
50
0
0
50
100
150
200
T
(°C)
s
Fig.2 Power derating curve.
2000 Mar 28
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
ICBO
hFE
Cc
collector leakage current IE = 0; VCB = 10 V
−
−
50
−
nA
DC current gain
IC = 15 mA; VCE = 10 V
40
−
90
0.6
0.9
0.35
5
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCE = 10 V; f = 1 MHz
IC = 15 mA; VCE = 10 V; f = 500 MHz
−
pF
Ce
−
−
pF
Cre
fT
−
−
pF
3.5
−
−
GHz
dB
GUM
maximum unilateral
power gain; note 1
IC = 15 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
14
−
IC = 15 mA; VCE = 10 V; f = 2 GHz;
−
8
−
dB
Tamb = 25 °C
F
noise figure
IC = 5 mA; VCE = 10 V; f = 1 GHz; Γs = Γopt
IC = 5 mA; VCE = 10 V; f = 2 GHz; Γs = Γopt
−
−
2
3
−
−
dB
dB
Note
2
s21
--------------------------------------------------------
1. GUM is the maximum unilateral power gain, assuming s12 is zero and GUM = 10 log
dB
(1 – s11 2)(1 – s22
)
2
2000 Mar 28
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
MGC883
MCD074
1.0
re
120
handbook, halfpage
C
(pF)
h
FE
0.8
80
40
0
0.6
0.4
0.2
0
0
4
8
12
16
20
(V)
0
10
20
30
I
(mA)
V
C
CB
VCE = 10 V.
IC = 0; f = 1 MHz.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
MGC884
6
handbook, halfpage
f
T
(GHz)
4
2
0
2
1
10
10
I
(mA)
C
VCE = 5 V; f = 500 MHz; Tamb = 25 °C.
Fig.5 Transition frequency as a function of
collector current; typical values.
2000 Mar 28
5
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
MGC885
MGC886
30
30
handbook, halfpage
handbook, halfpage
gain
gain
(dB)
(dB)
MSG
20
20
10
G
UM
MSG
G
UM
10
0
0
0
0
5
10
15
20
5
10
15
20
I
(mA)
I
(mA)
C
C
VCE = 10 V; f = 500 MHz.
VCE = 10 V; f = 1 GHz.
Fig.6 Gain as a function of collector current;
typical values.
Fig.7 Gain as a function of collector current;
typical values.
MGC887
MGC888
50
handbook, halfpage
gain
50
handbook, halfpage
gain
G
(dB)
(dB)
G
UM
UM
40
30
20
10
0
40
30
20
10
0
MSG
MSG
G
G
max
max
2
3
4
2
3
4
10
10
10
10
10
10
10
10
f (MHz)
f (MHz)
VCE = 10 V; IC = 5 mA.
VCE = 10 V; IC = 15 mA.
Fig.8 Gain as a function of frequency;
typical values.
Fig.9 Gain as a function of frequency;
typical values.
2000 Mar 28
6
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
MGC889
MGC890
6
6
handbook, halfpage
handbook, halfpage
F
F
(dB)
(dB)
f = 2 GHz
4
4
2
0
I
= 15 mA
C
1 GHz
10 mA
5 mA
500 MHz
2
0
2
2
3
4
1
10
10
10
10
10
I
(mA)
f (MHz)
C
VCE = 10 V.
VCE = 10 V.
Fig.10 Minimum noise figure as a function of
collector current; typical values.
Fig.11 Minimum noise figure as a function of
frequency; typical values.
o
90
1.0
1
o
o
F = 4 dB
F = 3 dB
0.8
0.6
0.4
0.2
0
135
45
2
0.5
F = 2 dB
0.2
5
F
= 1.6 dB
Γ
min
2
opt
0.2
0.5
1
5
o
o
180
0
0
5
0.2
0.5
2
o
o
45
135
1
MGC891
1.0
o
90
f = 500 MHz; VCE = 10 V; IC = 5 mA; Zo = 50 Ω.
Fig.12 Common emitter noise figure circles; typical values.
7
2000 Mar 28
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
(4)
(3)
(2)
0.2
(5)
5
(1)
(6)
0.2
0.5
1
2
5
o
o
180
0
0
(7)
(8)
5
0.2
(1) Γopt; Fmin = 2.1 dB.
(2) F = 2.5 dB.
(3) F = 3 dB.
(4) F = 4 dB.
0.5
2
o
o
45
135
(5) Γms; Gmax = 15.7 dB.
(6) G = 15 dB.
1
MGC892
1.0
(7) G = 14 dB.
o
90
(8) G = 13 dB.
f = 1 GHz; VCE = 10 V; IC = 5 mA; Zo = 50 Ω.
Fig.13 Common emitter noise figure circles; typical values.
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
(4)
(3)
(2)
0.2
5
(1)
0.2
0.5
1
2
5
o
o
180
0
0
(5)
5
0.2
(6)
(1) Γopt; Fmin = 3 dB.
(2) F = 3.5 dB.
(3) F = 4 dB.
(7)
(8)
0.5
(4) F = 5 dB.
2
o
o
45
135
(5) Γms; Gmax = 9.1 dB.
(6) G = 8 dB.
1
MGC893
1.0
(7) G = 7 dB.
o
90
(8) G = 6 dB.
f = 2 GHz; VCE = 10 V; IC = 5 mA; Zo = 50 Ω.
Fig.14 Common emitter noise figure circles; typical values.
8
2000 Mar 28
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
o
90
1.0
0.8
0.6
0.4
0.2
0
1
o
o
135
45
2
0.5
0.2
5
3 GHz
0.5
0.2
1
2
5
o
o
180
0
0
40 MHz
5
0.2
0.5
2
o
o
45
135
1
MGC894
1.0
o
90
VCE = 10 V; IC = 15 mA; Zo = 50 Ω.
Fig.15 Common emitter input reflection coefficient (s11); typical values.
o
90
o
o
135
45
40 MHz
30 20
3 GHz
o
o
180
0
50
40
10
o
o
135
45
o
MGC895
90
VCE = 10 V; IC = 15 mA.
Fig.16 Common emitter forward transmission coefficient (s21); typical values.
9
2000 Mar 28
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
o
90
3 GHz
o
o
135
45
40 MHz
o
o
180
0
0.25 0.20 0.15 0.10 0.05
o
o
135
45
o
MGC896
90
VCE = 10 V; IC = 15 mA.
Fig.17 Common emitter reverse transmission coefficient (s12); typical values.
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
0.2
5
0.2
0.5
1
2
5
o
o
180
0
0
40 MHz
5
3 GHz
0.2
0.5
2
o
o
45
135
1
MGC897
1.0
o
90
VCE = 10 V; IC = 15 mA; Zo = 50 Ω.
Fig.18 Common emitter output reflection coefficient (s22); typical values.
10
2000 Mar 28
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT416
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
1
2
c
e
1
b
p
w
M
B
L
p
e
detail X
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
A
UNIT
b
c
D
E
e
e
H
L
p
Q
v
w
p
1
E
max
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
1.75
1.45
0.45
0.15
0.23
0.13
0.95
0.60
mm
0.1
1
0.5
0.2
0.2
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT416
SC-75
2000 Mar 28
11
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
STATUS
DEFINITIONS (1)
Objective specification
Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 Mar 28
12
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
NOTES
2000 Mar 28
13
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
NOTES
2000 Mar 28
14
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92AT
NOTES
2000 Mar 28
15
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69
SCA
© Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
603508/02/pp16
Date of release: 2000 Mar 28
Document order number: 9397 750 06717
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