BFR92A [NXP]
NPN 5 GHz wideband transistor; NPN 5 GHz宽带晶体管
| 型号： | BFR92A |
| 厂家： | 
NXP |
| 描述： | NPN 5 GHz wideband transistor |
| 文件： | 总12页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFR92A
NPN 5 GHz wideband transistor
1997 Oct 29
Product specification
Supersedes data of September 1995
File under discrete semiconductors, SC14
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
FEATURES
DESCRIPTION
page
• High power gain
NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT92.
3
• Low noise figure
• Low intermodulation distortion.
1
2
PINNING
APPLICATIONS
Top view
MSB003
PIN
1
DESCRIPTION
• RF wideband amplifiers and
oscillators.
Marking code: P2p.
base
2
emitter
Fig.1 SOT23.
3
collector
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
20
UNIT
VCBO
VCEO
IC
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
−
−
−
−
V
15
25
300
−
V
mA
mW
pF
Ptot
Cre
Ts ≤ 95 °C
IC = ic = 0; VCE = 10 V; f = 1 MHz
0.35
5
fT
IC = 15 mA; VCE = 10 V; f = 500 MHz
−
GHz
dB
GUM
maximum unilateral power gain
IC = 15 mA; VCE = 10 V; f = 1 GHz;
14
−
Tamb = 25 °C
IC = 15 mA; VCE = 10 V; f = 2 GHz;
Tamb = 25 °C
8
−
−
−
dB
dB
mV
F
noise figure
IC = 5 mA; VCE = 10 V; f = 1 GHz;
Γs = Γopt; Tamb = 25 °C
2.1
VO
output voltage
dim = −60 dB; IC = 14 mA; VCE = 10 V; 150
RL = 75 Ω; fp + fq − fr = 793.25 MHz
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
−
−
−
−
−
20
V
15
V
open collector
2
V
25
mA
mW
°C
°C
Ptot
Tstg
Tj
Ts ≤ 95 °C; note 1; see Fig.3
300
+150
175
−65
−
Note
1. Ts is the temperature at the soldering point of the collector pin.
1997 Oct 29
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point Ts ≤ 95 °C; note 1
260
K/W
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector leakage current
DC current gain
CONDITIONS
IE = 0; VCB = 10 V
MIN.
TYP. MAX. UNIT
ICBO
hFE
Cc
−
−
50
−
nA
IC = 15 mA; VCE = 10 V; see Fig.4
40
90
0.6
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz;
see Fig.5
−
−
pF
Ce
Cre
fT
emitter capacitance
feedback capacitance
transition frequency
IC = ic = 0; VEB = 10 V; f = 1 MHz
IC = ic = 0; VCE = 10 V; f = 1 MHz
−
−
−
1.2
0.35
5
−
−
−
pF
pF
IC = 15 mA; VCE = 10 V; f = 500 MHz;
see Fig.6
GHz
GUM
maximum unilateral power
gain (note 1)
IC = 15 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C
−
−
−
14
8
−
−
−
dB
dB
dB
IC = 15 mA; VCE = 10 V; f = 2 GHz;
Tamb = 25 °C
F
noise figure
IC = 5 mA; VCE = 10 V; f = 1 GHz;
Γs = Γopt; Tamb = 25 °C;
see Figs 13 and 14
2.1
IC = 5 mA; VCE = 10 V; f = 2 GHz;
Γs = Γopt; Tamb = 25 °C;
see Figs 13 and 14
−
3
−
dB
VO
d2
output voltage
notes 2 and 3
−
−
150
−
−
mV
dB
second order intermodulation
distortion
notes 2 and 4; see Fig.16
−50
Notes
2
S21
2
˙
1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM = 10 log
dB .
--------------------------------------------------------------
2
1 – S11
1 – S22
2. Measured on the same die in a SOT37 package (BFR90A).
3. dim = −60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL = 75 Ω; VSWR < 2; Tamb = 25 °C
Vp = VO at dim = −60 dB; fp = 795.25 MHz;
Vq = VO −6 dB; fq = 803.25 MHz;
Vr = VO −6 dB; fr = 805.25 MHz;
measured at fp + fq − fr = 793.25 MHz.
4. IC = 14 mA; VCE = 10 V; RL = 75 Ω; VSWR < 2; Tamb = 25 °C
Vp = 60 mV at fp = 250 MHz;
Vq = 60 mV at fq = 560 MHz;
measured at fp + fq = 810 MHz.
1997 Oct 29
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
2.2 nF
2.2 nF
V
CC
V
BB
L3
33 kΩ
1 nF
L2
1 nF
75 Ω
output
L1
1 nF
300 Ω
DUT
75 Ω
input
3.3 pF
18 Ω
0.82 pF
MBB269
L1 = L3 = 5 µH choke.
L2 = 3 turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm.
Fig.2 Intermodulation distortion and second harmonic distortion MATV test circuit.
MCD074
MEA425 - 1
120
400
handbook, halfpage
handbook, halfpage
P
tot
(mW)
h
FE
300
80
40
0
200
100
0
0
0
10
20
30
50
100
150
200
I
(mA)
C
o
T ( C)
s
VCE = 10 V; Tj = 25 °C.
Fig.4 DC current gain as a function of collector
current; typical values.
Fig.3 Power derating curve.
1997 Oct 29
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
MBB274
MBB275
1
6
handbook, halfpage
handbook, halfpage
C
c
(pF)
0.8
f
T
(GHz)
4
0.6
0.4
2
0.2
0
0
0
0
5
10
15
20
10
20
30
I
(mA)
V
(V)
C
CB
IC = ic = 0; f = 1 MHz; Tj = 25 °C.
VCE = 10 V; f = 500 MHz; Tamb = 25 °C.
Fig.5 Collector capacitance as a function of
collector-base voltage; typical values.
Fig.6 Transition frequency as a function of
collector current; typical values.
MBB278
MBB279
30
30
handbook, halfpage
handbook, halfpage
gain
gain
(dB)
(dB)
MSG
20
20
MSG
G
UM
G
UM
10
10
0
0
0
5
10
20
15
25
(mA)
0
5
10
15
20
I
25
(mA)
I
C
C
VCE = 10 V; f = 500 MHz.
MSG = maximum stable gain;
GUM = maximum unilateral power gain.
VCE = 10 V; f = 1 GHz.
MSG = maximum stable gain;
GUM = maximum unilateral power gain.
Fig.7 Gain as a function of collector current;
typical values.
Fig.8 Gain as a function of collector current;
typical values.
1997 Oct 29
5
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
MBB281
MBB280
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
40
gain
(dB)
40
G
UM
G
UM
30
20
10
30
MSG
MSG
20
G
max
10
0
G
max
0
2
3
4
2
3
4
10
10
10
10
10
10
10
10
f (MHz)
f (MHz)
IC = 5 mA; VCE = 10 V.
UM = maximum unilateral power gain; MSG = maximum stable gain;
IC = 15 mA; VCE = 10 V.
GUM = maximum unilateral power gain; MSG = maximum stable gain;
G
Gmax = maximum available gain.
Gmax = maximum available gain.
Fig.9 Gain as a function of frequency;
typical values.
Fig.10 Gain as a function of frequency;
typical values.
MBB277
MBB276
40
30
handbook, halfpage
handbook, halfpage
B
S
B
S
F = 3.5 dB
(mS)
(mS)
20
10
20
3.0
F = 3.0 dB
2.5
2.5
0
0
10
20
30
2.0
1.8
2.4
1.7
20
40
0
20
40
60
80
(mS)
0
20
40
60
G
(mS)
S
G
S
IC = 4 mA; VCE = 10 V; f = 800 MHz.
IC = 14 mA; VCE = 10 V; f = 800 MHz.
Fig.11 Circles of constant noise figure;
typical values.
Fig.12 Circles of constant noise figure;
typical values.
1997 Oct 29
6
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
MCD081
MCD082
4
4
handbook, halfpage
handbook, halfpage
I
= 15 mA
C
f = 2 GHz
F
F
(dB)
(dB)
10 mA
5 mA
3
3
2
1
0
1 GHz
500 MHz
2
1
0
2
1
10
10
2
3
4
10
10
10
I
(mA)
C
f (MHz)
VCE = 10 V.
VCE = 10 V.
Fig.13 Minimum noise figure as a function of
collector current; typical values.
Fig.14 Minimum noise figure as a function of
frequency; typical values.
MBB283
MBB282
−35
−45
handbook, halfpage
handbook, halfpage
d
d
2
im
(dB)
−50
(dB)
−40
−45
−50
−55
−60
−55
−60
−65
−70
10
20
30
10
20
30
I
(mA)
I
(mA)
C
C
VCE = 10 V; VO = 150 mV (43.5 dBmV);
fp + fq−fr = 793.25 MHz; Tamb = 25 °C.
VCE = 10 V; VO = 60 mV; fp + fq−fr = 810 MHz; Tamb = 25 °C.
Measured in MATV test circuit (see Fig.2).
Measured in MATV test circuit (see Fig.2).
Fig.15 Intermodulation distortion;
typical values.
Fig.16 Second order intermodulation distortion;
typical values.
1997 Oct 29
7
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
1
0.5
2
0.2
5
10
∞
+ j
1200
0.2
0.5
1000
1
2
5
10
0
800
500
− j
10
200
5
0.2
100 MHz
2
0.5
MBB270
1
IC = 14 mA; VCE = 10 V; Zo = 50 Ω; Tamb = 25 °C.
Fig.17 Common emitter input reflection coefficient (S11); typical values.
90°
120°
60°
100
MHz
150°
30°
200
500
800
+ ϕ
− ϕ
1000
1200
10
20
30
0°
180°
30°
150°
60°
120°
MBB273
90°
IC = 14 mA; VCE = 10 V; Tamb = 25 °C.
Fig.18 Common emitter forward transmission coefficient (S21); typical values.
8
1997 Oct 29
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
90°
120°
60°
1200 MHz
typ
150°
1000
800
30°
500
200
+ ϕ
− ϕ
100
0.05
0.1
0.15
180°
0°
30°
150°
60°
120°
MBB271
90°
IC = 14 mA; VCE = 10 V; Tamb = 25 °C.
Fig.19 Common emitter reverse transmission coefficient (S12); typical values.
1
0.5
2
0.2
5
10
+ j
− j
0.2
0.5
1
2
5
10
∞
0
800
1000
1200
500
10
100
MHz
200
5
0.2
2
0.5
MBB272
1
IC = 14 mA; VCE = 10 V; Zo = 50 Ω; Tamb = 25 °C.
Fig.20 Common emitter output reflection coefficient (S22); typical values.
9
1997 Oct 29
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
1997 Oct 29
10
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92A
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Short-form specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Oct 29
11
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© Philips Electronics N.V. 1997
SCA55
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Printed in The Netherlands
127127/00/02/pp12
Date of release: 1997 Oct 29
Document order number: 9397 750 02766
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