BFR93AW [NXP]
NPN 5 GHz wideband transistor; NPN 5 GHz宽带晶体管
| 型号： | BFR93AW |
| 厂家： | 
NXP |
| 描述： | NPN 5 GHz wideband transistor |
| 文件： | 总12页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFR93AW
NPN 5 GHz wideband transistor
1995 Sep 18
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
FEATURES
DESCRIPTION
3
• High power gain
Silicon NPN transistor encapsulated
in a plastic SOT323 (S-mini) package.
The BFR93AW uses the same crystal
as the SOT23 version, BFR93A.
• Gold metallization ensures
excellent reliability
• SOT323 (S-mini) package.
PINNING
1
2
APPLICATIONS
PIN
DESCRIPTION
MBC870
It is designed for use in RF amplifiers,
mixers and oscillators with signal
frequencies up to 1 GHz.
Top view
1
2
3
base
Marking code: R2.
emitter
Fig.1 SOT323
collector
QUICK REFERENCE DATA
SYMBOL
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
CONDITIONS
MIN.
TYP.
MAX.
15
UNIT
VCBO
VCEO
IC
open emitter
open base
−
−
−
−
−
−
−
−
V
12
35
300
−
V
mA
mW
Ptot
hFE
Cre
up to Ts = 93 °C; note 1
IC = 30 mA; VCE = 5 V
40
90
feedback capacitance
IC = 0; VCE = 5 V; f = 1 MHz;
−
0.6
−
pF
Tamb = 25 °C
fT
transition frequency
IC = 30 mA; VCE = 5 V; f = 500 MHz
4
5
−
−
GHz
dB
GUM
maximum unilateral power IC = 30 mA; VCE = 8 V; f = 1 GHz;
−
13
gain
Tamb = 25 °C
IC = 30 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 °C
−
−
−
8
−
dB
dB
°C
F
noise figure
IC = 5 mA; VCE = 8 V; f = 1 GHz;
Γs = Γopt
1.5
−
−
Tj
junction temperature
150
Note
1. Ts is the temperature at the soldering point of the collector pin.
1995 Sep 18
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITION
MIN. MAX. UNIT
VCBO
VCEO
VEBO
IC
open emitter
open base
−
15
12
2
V
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
−
V
open collector
−
V
−
35
300
mA
mW
Ptot
Tstg
Tj
up to Ts = 93 °C; see Fig.2; note 1
−
−65
−
+150 °C
150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITION
VALUE
190
UNIT
Rth j-s
thermal resistance from junction to
soldering point
up to Ts = 93 °C; note 1
K/W
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.
MLB540
400
P
tot
(mW)
300
200
100
0
0
50
100
150
200
o
( C)
T
s
Fig.2 Power derating curve.
1995 Sep 18
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
CHARACTERISTICS
Tj = 25 °C (unless otherwise specified).
SYMBOL
PARAMETER
collector leakage current
DC current gain
CONDITIONS
IE = 0; VCB = 5 V
MIN.
TYP.
MAX.
50
UNIT
nA
ICBO
hFE
Cc
−
−
IC = 30 mA; VCE = 5 V
40
−
90
−
−
−
collector capacitance
emitter capacitance
IE = ie = 0; VCB = 5 V; f = 1 MHz
0.7
2.3
pF
pF
Ce
IC = ic = 0; VEB = 0.5 V;
f = 1 MHz
−
Cre
fT
feedback capacitance
transition frequency
IC = 0; VCE = 5 V; f = 1 MHz
−
0.6
5
−
−
pF
IC = 30 mA; VCE = 5 V;
f = 500 MHz
4
GHz
GUM
maximum unilateral power
gain; note 1
IC = 30 mA; VCE = 8 V;
f = 1 GHz; Tamb = 25 °C
−
−
−
−
13
8
−
−
−
−
dB
dB
dB
dB
IC = 30 mA; VCE = 8 V;
f = 2 GHz; Tamb = 25 °C
F
noise figure
IC = 5 mA; VCE = 8 V;
f = 1 GHz; Γs = Γopt
1.5
2.1
IC = 5 mA; VCE = 8 V;
f = 2 GHz; Γs = Γopt
Note
2
s21
1. GUM is the maximum unilateral power gain, assuming s12 is zero and GUM = 10 log
dB.
------------------------------------------------------------
(1 – s11 2) (1 – s22
)
2
1995 Sep 18
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
MBG203
MCD087
1
120
handbook, halfpage
C
re
(pF)
h
FE
0.8
0.6
80
40
0
0.4
0.2
0
0
4
8
12
16
0
10
20
30
V
(V)
I
(mA)
CB
C
IC = 0; f = 1 MHz.
VCE = 5 V.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
MBG204
6
f
T
(GHz)
4
2
0
2
1
10
10
I
(mA)
C
VCE = 5 V; f = 500 MHz; Tamb = 25 °C.
Fig.5 Transition frequency as a function
of collector current; typical values.
1995 Sep 18
5
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
MBG202
MBG201
30
30
gain
(dB)
gain
(dB)
MSG
20
20
G
UM
MSG
G
UM
10
10
0
0
0
10
20
30
0
10
20
30
I
(mA)
I
(mA)
C
C
VCE = 8 V; f = 500 MHz.
VCE = 8 V; f = 1 GHz.
Fig.6 Gain as a function of collector current;
typical values.
Fig.7 Gain as a function of collector current;
typical values.
MBG200
MGB207
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
G
G
UM
UM
40
30
20
10
0
40
30
20
10
0
MSG
MSG
G
G
max
max
2
3
4
2
3
4
10
10
10
10
10
10
10
10
f (MHz)
f (MHz)
VCE = 8 V; IC = 10 mA.
VCE = 8 V; IC = 30 mA.
Fig.8 Gain as a function of frequency;
typical values.
Fig.9 Gain as a function of frequency;
typical values.
1995 Sep 18
6
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
MGC901
MGC900
6
6
handbook, halfpage
handbook, halfpage
F
F
(dB)
(dB)
4
4
2
0
f = 2 GHz
I
= 30 mA
C
1 GHz
10 mA
5 mA
500 MHz
2
0
2
2
3
4
1
10
10
10
10
10
I
(mA)
f (MHz)
C
VCE = 8 V.
VCE = 8 V.
Fig.10 Minimum noise figure as a function of
collector current; typical values.
Fig.11 Minimum noise figure as a function of
collector current; typical values.
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
0.2
5
F
1
= 1.4 dB
min
Γ
opt
2
0.2
0.5
5
o
o
180
0
0
F = 2 dB
5
0.2
F = 3 dB
F = 4 dB
0.5
2
o
o
45
135
1
MGC879
1.0
o
90
f = 500 MHz; VCE = 8 V; IC = 10 mA; Zo = 50 Ω.
Fig.12 Common emitter noise figure circles; typical values.
7
1995 Sep 18
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
o
90
1.0
0.8
0.6
0.4
0.2
0
1
o
o
135
45
2
0.5
0.2
= 13.8 dB
5
G
F
= 2 dB
max
min
Γ
Γ
ms
opt
0.2
0.5
1
2
5
o
o
180
0
0
G = 13 dB
F = 2.5 dB
F = 3 dB
G = 12 dB
5
0.2
G = 11 dB
F = 4 dB
0.5
2
o
o
45
135
1
MGC880
1.0
o
90
f = 1 GHz; VCE = 8 V; IC = 10 mA; Zo = 50 Ω.
Fig.13 Common emitter noise figure circles; typical values.
o
90
1.0
0.8
0.6
0.4
0.2
0
1
o
o
135
0.2
45
2
0.5
(4)
5
(3)
(2)
0.2
0.5
1
2
5
o
o
180
0
0
(5) (1)
5
0.2
(6)
(7)
(1) Γopt; Fmin = 3 dB.
(2) F = 3.5 dB.
(3) F = 4 dB.
(8)
0.5
2
(4) F = 5 dB.
o
o
45
135
(5) Γms; Gmax = 8.1 dB.
(6) G = 7 dB.
1
MGC881
1.0
(7) G = 6 dB.
o
90
(8) G = 5 dB.
f = 2 GHz; VCE = 8 V; IC = 10 mA; Zo = 50 Ω.
Fig.14 Common emitter noise figure circles; typical values.
8
1995 Sep 18
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
o
90
1.0
0.8
0.6
0.4
0.2
0
1
o
o
135
45
2
0.5
0.2
5
3 GHz
0.2
0.5
1
2
5
o
o
180
0
0
40 MHz
5
0.2
0.5
2
o
o
45
135
1
MGC878
1.0
o
90
VCE = 8 V; IC = 30 mA; Zo = 50 Ω.
Fig.15 Common emitter input reflection coefficient (s11); typical values.
o
90
o
o
135
45
3 GHz
40 MHz
20 10
o
o
180
0
50
40
30
o
o
135
45
o
MGC898
90
VCE = 8 V; IC = 30 mA.
Fig.16 Common emitter forward transmission coefficient (s21); typical values.
9
1995 Sep 18
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
o
90
o
o
135
45
3 GHz
40 MHz
o
o
180
0
0.5
0.4
0.3
0.2
0.1
o
o
135
45
o
MGC899
90
VCE = 8 V; IC = 30 mA.
Fig.17 Common emitter reverse transmission coefficient (s12); typical values.
o
90
1.0
1
o
o
0.8
0.6
0.4
0.2
0
135
45
2
0.5
0.2
5
0.2
0.5
1
2
5
o
o
180
0
0
40 MHz
5
3 GHz
0.2
0.5
2
o
o
45
135
1
MGC877
1.0
o
90
VCE = 8 V; IC = 30 mA; Zo = 50 Ω.
Fig.18 Common emitter output reflection coefficient (s22); typical values.
10
1995 Sep 18
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
PACKAGE OUTLINE
2.2
1.8
1.35
1.15
A
B
X
0.25
0.10
2.2
2.0
M
0.2
B
3
0.2
1.0
0.8
1.1
max
0.1
0.0
0.40
0.30
1
2
0.2
M A
0.3
0.1
0.65
detail X
MBC871
1.3
Dimensions in mm.
Fig.19 SOT323.
1995 Sep 18
11
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR93AW
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1995 Sep 18
12
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