BFU668F,115 [NXP]

BFU668F - NPN wideband silicon RF transistor DFP 4-Pin;


型号：	BFU668F,115
厂家：	NXP
描述：	BFU668F - NPN wideband silicon RF transistor DFP 4-Pin
文件：	总14页 (文件大小：605K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BFU668F

NPN wideband silicon RF transistor

Rev. 3 — 24 January 2012

Product data sheet

1. Product profile

1.1 General description

NPN silicon microwave transistor in a plastic, 4-pin dual-emitter SOT343F package

offering an innovative Ku-band DRO solution.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling

electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or

equivalent standards.

1.2 Features and benefits

 DROs with good output power and low phase noise at very low current consumption: 5

dBm and 55 dBc/Hz/1 kHz at 12 mA

 Low-noise, high gain for low cost LNA solutions

 40 GHz f_Tsilicon technology

1.3 Applications

 Ku-band DROs in Ku-band LNBs

 C-band, low current LNAs

BFU668F

NXP Semiconductors

NPN wideband silicon RF transistor

1.4 Quick reference data

Table 1.

Quick reference data

Symbol Parameter

Conditions

open emitter

open base

Min Typ

Max Unit

V_CBO

V_CEO

V_EBO

I_C

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current

5.5

2.5

open collector

[1]

P_tot

total power dissipation

DC current gain

T_sp 90 C

200 mW

200

h_FE

I_C= 10 mA; V_CE= 3.5 V;

90 135

T_j= 25 C

C_CBS

f_T

collector-base capacitance

transition frequency

V_CB= 2 V; f = 1 MHz

138

I_C= 15 mA; V_CE= 3.5 V;

GHz

f = 2 GHz; T_amb= 25 C

IP3_o(max)maximum output third-order I_C= 15 mA; V_CE= 3.5 V;

dBm

intercept point

f = 10 GHz; T_amb= 25 C;

Z_S= Z_L= 50 ;

[2]

G_p(max)

maximum power gain

I_C= 15 mA; V_CE= 3.5 V;

f = 10.0 GHz;

10.5

1.7

T_amb= 25 C

noise figure

I_C= 15 mA; V_CE= 3.5 V;

f = 10.0 GHz; _S= _opt

;

T_amb= 25 C

P_L(1dB)

output power at 1 dB gain

compression

I_C= 15 mA; V_CE= 3.5 V;

Z_S= Z_L= 50 ;

dBm

f = 10 GHz; T_amb= 25 C

[1] T_spis the temperature at the solder point of the emitter lead.

[2] G_p(max)is the maximum power gain, if K > 1. If K < 1 then G_p(max)= MSG.

2. Pinning information

Table 2.

Discrete pinning

Description

emitter

Simplified outline

Graphic symbol

base

emitter

collector

1, 3

mbb159

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Product data sheet

Rev. 3 — 24 January 2012

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BFU668F

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NPN wideband silicon RF transistor

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BFU668F

plastic surface-mounted flat pack package; reverse

pinning; 4 leads

SOT343F

4. Marking

Table 4.

Marking

Type number

BFU668F

Marking

Description

ZA*

* = p : made in Hong Kong

* = t : made in Malaysia

* = w : made in China

5. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Conditions

open emitter

open base

Min

Max

Unit

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current

5.5

open collector

2.5

C

[1]

P_tot

total power dissipation

storage temperature

junction temperature

T_sp 90 C

200

+150

150

T_stg

65

T_j

[1] T_spis the temperature at the solder point of the emitter lead.

6. Thermal characteristics

Table 6.

Symbol Parameter

R_th(j-sp)thermal resistance from junction to solder point

Thermal characteristics

Conditions

Typ Unit

270 K/W

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Product data sheet

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NPN wideband silicon RF transistor

aaa-001278

250

tot

(mW)

200

150

100

120

160

(°C)

Fig 1. Power derating curve

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Product data sheet

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BFU668F

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NPN wideband silicon RF transistor

7. Characteristics

Table 7.

Characteristics

T_j= 25 C unless otherwise specified

Symbol Parameter

Conditions

Min Typ

Max Unit

V_(BR)CBOcollector-base breakdown voltage

V_(BR)CEOcollector-emitter breakdown voltage

I_C= 2.5 A; I_E= 0 mA

I_C= 1 mA; I_B= 0 mA

5.5

I_C

collector current

I_CBO

h_FE

collector-base cut-off current

DC current gain

I_E= 0 mA; V_CB= 8 V

I_C= 10 mA; V_CE= 3.5 V

V_CB= 2 V; f = 1 MHz

V_EB= 0.5 V; f = 1 MHz

V_CB= 2 V; f = 1 MHz

100 nA

200

90 135

C_CES

C_EBS

C_CBS

f_T

collector-emitter capacitance

emitter-base capacitance

collector-base capacitance

transition frequency

297

664

138

I_C= 15 mA; V_CE= 3.5 V; f = 2 GHz;

GHz

T_amb= 25 C

[1]

G_p(max)

s₂₁²

maximum power gain

insertion power gain

noise figure

I_C= 15 mA; V_CE= 3.5 V; T_amb= 25 C

f = 5.8 GHz

14.5

10.5

f = 10.0 GHz

I_C= 15 mA; V_CE= 3.5 V; T_amb= 25 C

f = 5.8 GHz

9.5

5.0

f = 10.0 GHz

I_C= 15 mA; V_CE= 3.5 V; _S= _opt

T_amb= 25 C

;

f = 5.8 GHz

1.3

1.7

f = 10.0 GHz

G_ass

associated gain

I_C= 15 mA; V_CE= 3.5 V; _S= _opt

T_amb= 25 C

;

f = 5.8 GHz

f = 10.0 GHz

9.5

P_L(1dB)

output power at 1 dB gain compression

I_C= 15 mA; V_CE= 3.5 V;

Z_S= Z_L= 50 ; T_amb= 25 C

f = 5.8 GHz

dBm

f = 10.0 GHz

IP3_o(max)maximum output third-order intercept

point

I_C= 15 mA; V_CE= 3.5 V;

Z_S= Z_L= 50 ; T_amb= 25 C

f = 5.8 GHz

dBm

f = 10.0 GHz

[1] G_p(max)is the maximum power gain, if K > 1. If K < 1 then G_p(max)= MSG.

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Product data sheet

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NPN wideband silicon RF transistor

8. Application information

8.1 BFU668F Ku-band Dielectric Resonator Oscillator (DRO)

Figure 2 shows a typical DRO circuit using BFU668F as active device. The schematic

highlights the bias elements. Evaluation tests, done by replacing the existing transistor

with BFU668F, on three different DRO LNBs / configurations, have proven:

• BFU668F achieves similar Phase Noise and RF power as the replaced transistor

• BFU668F achieves same RF performances at approximately half of the bias current

BFU668F

aaa-001279

Fig 2. Generic schematic / bias

BFU668F

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Product data sheet

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8.2 Graphs

aaa-001280

aaa-001281

200

(6)

(mA)

160

120

(5)

(4)

(3)

(2)

(1)

(V)

I (mA)

T_amb= 25 C.

V_CE= 2 V; T_amb= 25 C.

(1) I_B= 50 A

(2) I_B= 100 A

(3)

I_B= 150 A

(4) I_B= 200 A

(5) I_B= 250 A

(6)

I_B= 300 A

Fig 3. Collector current as a function of

collector-emitter voltage; typical values

Fig 4. DC current gain as a function of collector

current; typical values

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Product data sheet

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BFU668F

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NPN wideband silicon RF transistor

aaa-001282

aaa-001283

200

(fF)

CBS

(GHz)

160

120

(V)

I (mA)

f = 1 MHz, T_amb= 25 C.

V_CE= 3.5 V; f = 2 GHz; T_amb= 25 C.

Fig 5. Collector-base capacitance as a function of

collector-base voltage; typical values

Fig 6. Transition frequency as a function of collector

current; typical values

aaa-001284

(1)

(dB)

(2)

(mA)

V_CE= 3.5 V; T_amb= 25 C.

(1) f = 5.8 GHz

(2) f = 10.0 GHz

Fig 7. Gain as a function of collector current; typical value

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Product data sheet

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BFU668F

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NPN wideband silicon RF transistor

aaa-001285

aaa-001286

2.0

(dB)

min

1.6

1.2

0.8

0.4

0.0

MSG

p(max)

f (GHz)

V_CE= 3.5 V; I_C= 15 mA; T_amb= 25 C.

Fig 8. Gain as a function of frequency; typical values Fig 9. Minimum noise figure as a function of

frequency; typical values

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Product data sheet

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NPN wideband silicon RF transistor

9. Package outline

Plastic surface-mounted flat pack package; reverse pinning; 4 leads

SOT343F

detail X

2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

max

0.75

0.65

0.4

0.3

0.7

0.5

0.25

0.10

2.2

1.8

1.35

1.15

2.2

2.0

0.48

0.38

1.3

1.15

0.2

0.1

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC

JEDEC

JEITA

05-07-12

06-03-16

SOT343F

Fig 10. Package outline SOT343F

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Product data sheet

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NPN wideband silicon RF transistor

10. Abbreviations

Table 8.

Abbreviations

Description

Acronym

Direct Current

DRO

Dielectric Resonator Oscillator

Kurtz under

LNA

LNB

NPN

Low Noise Amplifier

Low Noise Block

Negative-Positive-Negative

Radio Frequency

11. Revision history

Table 9.

Revision history

Document ID

BFU668F v.3

Modifications:

Release date

Data sheet status

Change notice

Supersedes

20120124

Product data sheet

BFU668F v.2

• Table 1 on page 2: maximum value for h_FEhas been changed.

• Table 7 on page 5: maximum value for h_FEhas been changed.

BFU668F v.2

BFU668F v.1

20120120

Product data sheet

BFU668F v.1

20111108

Product data sheet

BFU668F

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Product data sheet

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12. Legal information

12.1 Data sheet status

Document status^[1][2]

Product status^[3]

Development

Definition

Objective [short] data sheet

This document contains data from the objective specification for product development.

This document contains data from the preliminary specification.

This document contains the product specification.

Preliminary [short] data sheet Qualification

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Definitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

Suitability for use — NXP Semiconductors products are not designed,

12.2 Definitions

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconductors products in such equipment or

applications and therefore such inclusion and/or use is at the customer’s own

risk.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and operation of their applications

and products using NXP Semiconductors products, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suitable and fit for the customer’s applications and

products planned, as well as for the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to offer functions and qualities beyond those described in the

Product data sheet.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

12.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. NXP Semiconductors takes no

responsibility for the content in this document if provided by an information

source outside of NXP Semiconductors.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

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Product data sheet

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Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims resulting from customer design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automotive use. It is neither qualified nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

12.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

BFU668F

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Product data sheet

Rev. 3 — 24 January 2012

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NPN wideband silicon RF transistor

14. Contents

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

1.4

General description . . . . . . . . . . . . . . . . . . . . . 1

Features and benefits. . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Quick reference data . . . . . . . . . . . . . . . . . . . . 2

Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 3

Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . 3

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

8.1

Application information. . . . . . . . . . . . . . . . . . . 6

BFU668F Ku-band Dielectric Resonator Oscillator

(DRO) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

8.2

Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

12.1

12.2

12.3

12.4

Contact information. . . . . . . . . . . . . . . . . . . . . 13

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 24 January 2012

Document identifier: BFU668F

BFU668F,115 [NXP]

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