BGA2012,115 [NXP]
BGA2012 - 1900 MHz high linear low noise amplifier TSSOP 6-Pin;
| 型号： | BGA2012,115 |
| 厂家： | 
NXP |
| 描述： | BGA2012 - 1900 MHz high linear low noise amplifier TSSOP 6-Pin 射频 微波 |
| 文件： | 总12页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BGA2012
1900 MHz high linear low noise
amplifier
Product specification
2000 Dec 04
Supersedes data of 2000 Sep 06
NXP Semiconductors
Product specification
1900 MHz high linear low noise amplifier
BGA2012
FEATURES
PINNING
Low current, low voltage
High linearity
PIN
DESCRIPTION
1
2
RF in
VC
High power gain
Low noise
3
VS
Integrated temperature compensated biasing
Control pin for adjustment bias current.
4
RF out
GND
5, 6
APPLICATIONS
V
handbook, halfpage
S
RF front end
6
5
4
Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.
RF out
DESCRIPTION
BIAS
CIRCUIT
V
C
Silicon Monolitic Microwave Integrated Circuit (MMIC)
amplifier consisting of an NPN double polysilicon transistor
with integrated biasing for low voltage applications in a
6-pin SOT363 plastic SMD package.
1
2
3
RF in
GND
Top view
MBL251
Marking code: A6-
Fig.1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA
SYMBOL
VS
PARAMETER
DC supply voltage
CONDITIONS
RF input AC coupled
TYP.
MAX.
4.5
UNIT
3
V
IS
DC supply current
DC control current
insertion power gain
7.5
0.11
16
mA
mA
dB
IC
|s21|2
VC = VS
in application circuit, see Fig.2;
f = 1900 MHz
NF
noise figure
IS = 7 mA; f = 1900 MHz
1.7
dB
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL PARAMETER CONDITIONS
VS DC supply voltage RF input AC coupled
MIN.
MAX.
UNIT
4.5
VS
V
VC
IS
voltage on control pin
supply current
V
forced by DC voltage on RF input
15
mA
mA
mW
C
C
IC
control current
0.25
70
Ptot
Tstg
Tj
total power dissipation
storage temperature
operating junction temperature
Ts 100 C
65
+150
150
2000 Dec 04
2
NXP Semiconductors
Product specification
1900 MHz high linear low noise amplifier
BGA2012
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
VALUE
UNIT
thermal resistance from junction
to solder point
Ptot = 135 mW; Ts 100 C
350
K/W
CHARACTERISTICS
RF input AC coupled; VS = 3 V; IS = 7 mA; f = 1900 MHz; Tj = 25 C; unless otherwise specified.
SYMBOL
IS
PARAMETER
supply current
CONDITIONS
MIN.
TYP.
7.5
MAX.
10
UNIT
mA
5
IC
control current
0.11
11
20
14
9
mA
dB
RL IN
return losses input
typical application; see Fig.2
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 0.5 mm)
typical application; see Fig.2
dB
dB
RL OUT
|s21|2
NF
return losses output
insertion power gain
noise figure
dB
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 0.5 mm)
typical application (see Fig.2)
10
8
dB
dB
14
dB
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 0.5 mm)
typical application; see Fig.2; IS = 7 mA
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 0.5 mm)
typical application; see Fig.2
16
dB
14
dB
1.7
2.2
2.3
7
dB
dB
dB
IP3in
input intercept point
dBm
dBm
dBm
high IP3 (see Fig.2; stripline = 0 mm)
high IP3 (see Fig.2; stripline = 0.5 mm)
7
10
2000 Dec 04
3
NXP Semiconductors
Product specification
1900 MHz high linear low noise amplifier
BGA2012
APPLICATION INFORMATION
V
S
V
S
C4
C3
V
C
BIAS
CIRCUIT
L2
V
C
C5
C2
RF out
OUT
C1
RF in
MLD470
IN
SOT363
L1
GND
stripline
C6
Fig.2 Application circuit.
List of components (see Fig.2)
TYPICAL
APPLICATION
HIGH IP3
COMPONENT
DESCRIPTION
DIMENSIONS
APPLICATION
100 pF
22 nF
C1, C2
C3, C5
C4
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
SMD inductor
100 pF
0603
0603
22 nF
C6
100 nF
3.9 nH
3.9 nH
0805
0603
0603
L1
L2
SMD inductor
Note
1. The stripline (w = 0.7 mm) is on a gold plated double copper-clad printed-circuit board (r = 6.15),
board thickness = 0.64 mm, copper thickness = 35 m, gold thickness = 5 m.
2000 Dec 04
4
NXP Semiconductors
Product specification
1900 MHz high linear low noise amplifier
BGA2012
MLD471
MLD472
25
20
10
handbook, halfpage
handbook, halfpage
G
UM
I
gain
gain
S
(dB)
(dB)
(mA)
20
16
8
G
max
2
s
21
2
s
21
15
12
6
10
5
8
4
4
2
I
S
0
0
0
0
0
3
1000
2000
3000
1
2
f (MHz)
V
(V)
C
IC = 7 mA; VS = VC = 3 V; PD = 30 dBm; Zo = 50
f = 1900 MHz; VS = 3 V; PD = 30 dBm.
Fig.3 Insertion gain (s212), GUM and Gmax as
Fig.4 Insertion gain and supply current as
functions of control voltage; typical values.
functions of frequency; typical values.
MLD474
MLD473
20
10
0
handbook, halfpage
handbook, halfpage
2
s
21
IP3
out
(dBm)
IP3
in
(dBm)
(dB)
IP3
IP3
out
15
10
5
5
−5
in
0
−10
−15
0
10
−5
−3
−2
−1
10
10
0
2
4
6
8
I
(mA)
I
(mA)
C
S
VS = VC = 3 V; PD = 30 dBm (both tones); f = 1900 MHz; f = 100 kHz.
f = 1900 MHz; VS = 3 V; PD = 30 dBm.
Fig.6 Output and input 3rd order intercept point
as functions of supply current; typical
application; typical values.
Fig.5 Insertion gain as a function of control
current; typical values.
2000 Dec 04
5
NXP Semiconductors
Product specification
1900 MHz high linear low noise amplifier
BGA2012
MLD475
2
handbook, halfpage
NF
(dB)
1.6
1.2
0.8
0.4
0
2
4
6
8
I
(mA)
S
VS = VC = 3 V; f = 1900 MHz
Fig.7 Noise figure as a function of
supply current; typical values.
Scattering parameters
VS = VC = 3 V; PD = 30 dBm; Zo = 50 ; Tamb = 25 C
s11
s21
s12
s22
f
MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE
(MHz)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
(ratio)
(deg)
100
200
0.775
0.761
0.709
0.646
0.581
0.519
0.461
0.401
0.350
0.313
0.289
0.278
0.276
0.286
0.293
0.287
8.390
16.37
31.51
44.97
56.47
66.59
75.41
83.99
93.12
102.0
110.6
118.5
125.0
131.9
136.5
141.6
12.527
12.154
11.213
10.139
9.061
8.131
7.254
6.461
5.869
5.256
4.778
4.394
4.051
3.793
3.571
3.326
171.1
163.1
148.6
136.4
126.1
117.3
109.5
103.1
96.39
90.46
85.58
81.16
77.28
74.34
70.27
67.39
0.005
0.011
0.020
0.028
0.034
0.039
0.043
0.047
0.051
0.054
0.058
0.062
0.066
0.072
0.076
0.083
84.90
79.39
72.23
66.03
61.82
58.86
58.07
57.92
57.26
57.37
58.10
57.66
56.08
60.98
60.21
61.36
0.742
0.731
0.689
0.631
0.573
0.519
0.469
0.428
0.396
0.369
0.348
0.336
0.333
0.316
0.308
0.272
6.684
13.15
24.85
34.90
43.40
50.54
57.19
64.08
70.03
75.33
80.47
85.37
89.83
92.61
94.44
99.52
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
2000 Dec 04
6
NXP Semiconductors
Product specification
1900 MHz high linear low noise amplifier
BGA2012
90°
1.0
0.8
0.6
0.4
0.2
0
+1
135°
+0.5
45°
+2
+0.2
+5
0.2
0.5
1
2
5
180°
0
0°
100 MHz
3 GHz
1900 MHz
−5
−0.2
−0.5
−2
−45°
−135°
−1
MLD476
1.0
−90°
IC = 7 mA; VS = VC = 3 V; PD = 30 dBm; Zo = 50
Fig.8 Common emitter input reflection coefficient (s11); typical values.
90°
135°
45°
1 GHz
500 MHz
1900 MHz
3 GHz
100 MHz
16
20
12
8
4
180°
0°
−135°
−45°
MLD477
−90°
IC = 7 mA; VS = VC = 3 V; PD = 30 dBm; Zo = 50
Fig.9 Common emitter forward transmission coefficient (s21); typical values.
7
2000 Dec 04
NXP Semiconductors
Product specification
1900 MHz high linear low noise amplifier
BGA2012
90°
135°
45°
3 GHz
20
16
12
8
4
180°
0°
100 MHz
−135°
−45°
MLD478
−90°
IC = 7 mA; VS = VC = 3 V; PD = 30 dBm; Zo = 50
Fig.10 Common emitter reverse transmission coefficient (s12); typical values.
90°
1.0
+1
0.8
135°
+0.2
45°
+2
+0.5
0.6
0.4
0.2
0
+5
0.2
0.5
1
2
5
180°
0
0°
100 MHz
3 GHz
1900 MHz
−5
−0.2
−0.5
−2
−45°
−135°
−1
−90°
MLD479
1.0
IC = 7 mA; VS = VC = 3 V; PD = 30 dBm; Zo = 50
Fig.11 Common emitter output reflection coefficient (s22); typical values.
8
2000 Dec 04
NXP Semiconductors
Product specification
1900 MHz high linear low noise amplifier
BGA2012
PACKAGE OUTLINE
Plastic surface-mounted package; 6 leads
SOT363
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
1
2
3
c
e
1
b
L
p
w
M B
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-08
06-03-16
SOT363
SC-88
2000 Dec 04
9
NXP Semiconductors
Product specification
1900 MHz high linear low noise amplifier
BGA2012
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DEFINITIONS
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Product specification The information and data
provided in a Product data sheet shall define the
specification of the product as agreed between NXP
Semiconductors and its customer, unless NXP
Semiconductors and customer have explicitly agreed
otherwise in writing. In no event however, shall an
agreement be valid in which the NXP Semiconductors
product is deemed to offer functions and qualities beyond
those described in the Product data sheet.
Suitability for use NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
DISCLAIMERS
Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
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charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
2000 Dec 04
10
NXP Semiconductors
Product specification
1900 MHz high linear low noise amplifier
BGA2012
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Export control This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
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Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Semiconductors’ product specifications.
No offer to sell or license Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
2000 Dec 04
11
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R77/02/pp12
Date of release: 2000 Dec 04
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