BGA2714,115 [NXP]

BGA2714 - MMIC wideband amplifier TSSOP 6-Pin;
BGA2714,115
型号: BGA2714,115
厂家: NXP    NXP
描述:

BGA2714 - MMIC wideband amplifier TSSOP 6-Pin

射频 微波
文件: 总15页 (文件大小:95K)
中文:  中文翻译
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BGA2714  
MMIC wideband amplifier  
Rev. 01 — 24 May 2007  
Product data sheet  
1. Product profile  
1.1 General description  
Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internal  
matching circuit in a 6-pin SOT363 plastic SMD package.  
Table 1.  
Typical performance  
Tamb = 25 °C; measured on demo board; typical values.  
f
VSUP  
(V)  
ISUP  
(mA)  
4.58  
4.58  
4.58  
Gp  
NF  
PL(1dB)  
(dBm)  
7.8  
PL(sat)  
(dBm)  
2.4  
IP3O  
(dBm)  
4.3  
(MHz)  
250  
950  
2150  
(dB)  
20.7  
20.4  
20.8  
(dB)  
2.4  
2.2  
3.0  
3.0  
3.0  
7.9  
3.4  
2.1  
3.0  
9.0  
4.7  
0.0  
CAUTION  
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken  
during transport and handling.  
1.2 Features  
I Internally matched to 50  
I Wide frequency range (2.7 GHz at 3 dB gain bandwidth)  
I Flat 21 dB gain (± 1 dB from DC up to 2500 MHz)  
I Very low current (4.6 mA) at low supply voltage of 3 V  
I Very good reverse isolation (> 50 dB up to 2 GHz)  
I Good linearity with low second order and third order products  
I Low noise (NF = 2.2 dB at 1 GHz)  
I Unconditionally stable (K > 5)  
1.3 Applications  
I LNB IF amplifiers  
I General purpose low noise wideband amplifier for frequencies between  
DC and 2.7 GHz  
 
 
 
 
BGA2714  
NXP Semiconductors  
MMIC wideband amplifier  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Description  
VSUP  
Simplified outline  
Symbol  
1
6
5
4
2, 5  
3
GND2  
6
3
RF_OUT  
GND1  
4
4
2, 5  
1
2
3
6
RF_IN  
sym052  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
-
Description  
Version  
BGA2714  
plastic surface-mounted package; 6 leads  
SOT363  
4. Marking  
Table 4.  
Marking  
Type number  
BGA2714  
Marking code  
BA-  
5. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VSUP  
ISUP  
Ptot  
Parameter  
Conditions  
Min  
Max  
Unit  
supply voltage  
RF input AC coupled  
-
4
V
supply current  
-
10  
200  
mA  
mW  
total power dissipation  
storage temperature  
junction temperature  
drive power  
Tsp = 90 °C  
-
Tstg  
65  
+150 °C  
Tj  
-
-
150  
°C  
Pdrive  
20  
dBm  
BGA2714_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 24 May 2007  
2 of 15  
 
 
 
 
BGA2714  
NXP Semiconductors  
MMIC wideband amplifier  
6. Thermal characteristics  
Table 6.  
Symbol  
Rth(j-sp)  
Thermal characteristics  
Parameter  
Conditions  
Typ  
Unit  
thermal resistance from junction to Ptot = 200 mW; Tsp = 90 °C  
300  
K/W  
solder point  
7. Characteristics  
Table 7.  
Characteristics  
VSUP = 3 V; ISUP = 4.58 mA; Tamb = 25 °C; measured on demo board; unless otherwise specified.  
Symbol Parameter  
Conditions  
Min  
3.7  
20  
20  
20  
20  
19  
16  
11  
7
Typ  
Max Unit  
ISUP  
Gp  
supply current  
power gain  
4.58 5.7 mA  
f = 100 MHz  
f = 250 MHz  
f = 950 MHz  
f = 2150 MHz  
f = 2500 MHz  
f = 3000 MHz  
f = 250 MHz  
f = 950 MHz  
f = 2150 MHz  
f = 250 MHz  
f = 950 MHz  
f = 2150 MHz  
f = 250 MHz  
f = 950 MHz  
f = 2150 MHz  
f = 250 MHz  
f = 950 MHz  
f = 2150 MHz  
20.8 21  
20.7 21  
20.4 21  
20.8 22  
19.5 21  
16.8 18  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
dB  
RLin  
RLout  
ISL  
input return loss  
output return loss  
isolation  
13.9  
8.9  
15.9  
10.6  
10.8  
9.8  
58  
-
-
-
-
-
-
-
-
-
12  
10  
10  
8
55  
55  
45  
-
59  
49  
NF  
noise figure  
2.4  
2.2  
3.0  
2.7  
2.5 dB  
2.3 dB  
3.2 dB  
-
-
B3dB  
K
3 dB bandwidth  
3 dB below gain  
at 1 GHz  
-
-
GHz  
Rollet stability factor  
f = 250 MHz  
f = 950 MHz  
f = 2150 MHz  
f = 250 MHz  
f = 950 MHz  
f = 2150 MHz  
25  
35  
7
30  
-
-
-
-
-
-
-
-
-
47  
10  
PL(sat)  
saturated output power  
3  
4  
6  
2.4  
3.4  
4.7  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
PL(1dB) output power at 1 dB gain compression f = 250 MHz  
8.5 7.8  
8.7 7.9  
f = 950 MHz  
f = 2150 MHz  
10  
9  
BGA2714_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 24 May 2007  
3 of 15  
 
 
BGA2714  
NXP Semiconductors  
MMIC wideband amplifier  
Table 7.  
Characteristics …continued  
VSUP = 3 V; ISUP = 4.58 mA; Tamb = 25 °C; measured on demo board; unless otherwise specified.  
Symbol Parameter  
Conditions  
f = 250 MHz  
f = 950 MHz  
f = 2150 MHz  
f = 250 MHz  
f = 950 MHz  
f = 2150 MHz  
f1H = 250 MHz;  
Min  
Typ  
Max Unit  
IP3I  
input third-order intercept point  
17.4 16.4 -  
19.1 18.3 -  
21.8 20.8 -  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
dBm  
IP3O  
output third-order intercept point  
second harmonic output power  
3.3  
4.3  
2.1  
0
-
-
-
-
1.3  
1.0  
62  
PL(2H)  
64  
f2H = 500 MHz;  
Pdrive = 40 dBm  
f1H = 950 MHz;  
2H = 1900 MHz;  
drive = 40 dBm  
58  
36  
31  
60  
38  
33  
-
-
-
dBm  
dBc  
dBc  
f
P
IM2  
second-order intermodulation distance f1 = 250 MHz;  
f2 = 251 MHz;  
Pdrive = 40 dBm  
f1 = 950 MHz;  
f2 = 951 MHz;  
Pdrive = 40 dBm  
8. Application information  
Figure 1 shows a typical application circuit for the BGA2714 MMIC. The device is  
internally matched to 50 , and therefore does not need any external matching. The value  
of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF  
for applications above 100 MHz. However, when the device is operated below 100 MHz,  
the capacitor value should be increased.  
The 22 nF supply decoupling capacitor C1 should be located as close as possible to the  
MMIC.  
The PCB top ground plane, connected to pins 2, 4 and 5 must be as close as possible to  
the MMIC, preferably also below the MMIC. When using via holes, use multiple via holes  
as close as possible to the MMIC.  
V
S
C1  
V
S
C2  
C3  
RF_IN  
RF_OUT  
RF input  
RF output  
001aaf761  
GND1  
GND2  
Fig 1. Typical application circuit  
BGA2714_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 24 May 2007  
4 of 15  
 
 
BGA2714  
NXP Semiconductors  
MMIC wideband amplifier  
8.1 Application examples  
wideband  
amplifier  
wideband  
amplifier  
LNA  
mixer  
mixer  
to IF circuit  
or demodulator  
from RF  
circuit  
to IF circuit  
or demodulator  
antenna  
oscillator  
001aaf763  
oscillator  
001aaf762  
The MMIC is very suitable as IF amplifier in e.g.  
LNB’s. The excellent wideband characteristics make  
it an easy building block.  
As second amplifier after an LNA, the MMIC offers  
an easy matching, low noise solution.  
Fig 2. Application as IF amplifier  
Fig 3. Application as RF amplifier  
8.2 Graphs  
90°  
1.0  
+1  
0.8  
135°  
45°  
+0.5  
+2  
0.6  
0.4  
+0.2  
+5  
0.2  
100 MHz  
0
0.2  
0.5  
1
2
5
10  
0°  
0
180°  
3 GHz  
5  
0.2  
2  
0.5  
135°  
45°  
1  
1.0  
001aaf764  
90°  
Tamb = 25 °C; ISUP = 4.58 mA; VSUP = 3 V; Pdrive = 40 dBm; Z0 = 50 .  
Fig 4. Input reflection coefficient (S11); typical values  
BGA2714_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 24 May 2007  
5 of 15  
 
 
BGA2714  
NXP Semiconductors  
MMIC wideband amplifier  
90°  
1.0  
+1  
0.8  
135°  
45°  
+0.5  
+2  
0.6  
0.4  
0.2  
+0.2  
+5  
0
0.2  
0.5  
1
2
5
10  
0°  
0
180°  
3 GHz  
100 MHz  
5  
0.2  
2  
0.5  
135°  
45°  
1  
1.0  
001aaf765  
90°  
Tamb = 25 °C; ISUP = 4.58 mA; VSUP = 3 V; Pdrive = 40 dBm; Z0 = 50 .  
Fig 5. Output reflection coefficient (S22); typical values  
001aaf766  
001aaf767  
30  
30  
G
G
p
p
(dB)  
(dB)  
(1)  
(2)  
(1)  
20  
20  
(3)  
(2)  
(3)  
10  
10  
0
0
0
1000  
2000  
3000  
0
1000  
2000  
3000  
f (MHz)  
f (MHz)  
Tamb = 25 °C; Pdrive = 40 dBm; Z0 = 50 .  
(1) VSUP = 3.3 V; ISUP = 4.96 mA.  
(2) VSUP = 3.0 V; ISUP = 4.58 mA.  
(3) VSUP = 2.7 V; ISUP = 4.16 mA.  
VSUP = 3 V; Pdrive = 40 dBm; Z0 = 50 .  
(1) Tamb = 40 °C; ISUP = 5.01 mA.  
(2) Tamb = +25 °C; ISUP = 4.58 mA.  
(3) Tamb = +85 °C; ISUP = 4.22 mA.  
Fig 6. Insertion power gain as function of frequency;  
typical values  
Fig 7. Insertion power gain as function of frequency;  
typical values  
BGA2714_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 24 May 2007  
6 of 15  
BGA2714  
NXP Semiconductors  
MMIC wideband amplifier  
001aaf768  
001aaf769  
2
0
10  
ISL  
(dB)  
K
20  
40  
60  
80  
10  
1
1  
10  
0
1000  
2000  
3000  
0
1000  
2000  
3000  
4000  
f (MHz)  
f (MHz)  
Tamb = 25 °C; ISUP = 4.58 mA; VSUP = 3 V;  
Pdrive = 40 dBm; Z0 = 50 .  
Tamb = 25 °C; ISUP = 4.58 mA; VSUP = 3 V;  
Z0 = 50 .  
Fig 8. Isolation as function of frequency; typical  
values  
Fig 9. Rollet stability factor as function of frequency;  
typical values  
001aaf770  
001aaf771  
5
5
NF  
NF  
(dB)  
(dB)  
4
4
3
3
(1)  
(1)  
(2)  
(2)  
(3)  
2
2
(3)  
1
1
0
1000  
2000  
3000  
0
1000  
2000  
3000  
f (MHz)  
f (MHz)  
Tamb = 25 °C; Z0 = 50 .  
VSUP = 3 V; Z0 = 50 .  
(1) VSUP = 3.3 V; ISUP = 4.96 mA.  
(2) VSUP = 3.0 V; ISUP = 4.58 mA.  
(3) VSUP = 2.7 V; ISUP = 4.16 mA.  
(1) Tamb = 40 °C; ISUP = 5.01 mA.  
(2) Tamb = +25 °C; ISUP = 4.58 mA.  
(3) Tamb = +85 °C; ISUP = 4.22 mA.  
Fig 10. Noise figure as function of frequency  
Fig 11. Noise figure as function of frequency  
BGA2714_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 24 May 2007  
7 of 15  
BGA2714  
NXP Semiconductors  
MMIC wideband amplifier  
001aaf772  
001aaf773  
0
0
P
P
L
L
(dBm)  
(dBm)  
(1)  
(2)  
(3)  
(1)  
(2)  
(3)  
10  
10  
20  
20  
30  
45  
30  
45  
35  
25  
15  
35  
25  
15  
P (dBm)  
i
P (dBm)  
i
Tamb = 25 °C; f = 250 MHz; Z0 = 50 .  
(1) VSUP = 3.3 V.  
Tamb = 25 °C; f = 950 MHz; Z0 = 50 .  
(1) VSUP = 3.3 V.  
(2) VSUP = 3.0 V.  
(3) VSUP = 2.7 V.  
(2) VSUP = 3.0 V.  
(3) VSUP = 2.7 V.  
Fig 12. Output power as function of input power at  
250 MHz; typical values  
Fig 13. Output power as function of input power at  
950 MHz; typical values  
001aaf774  
001aaf775  
0
0
(1)  
(2)  
(3)  
P ,  
L
P
L
IMD3  
(dBm)  
(1)  
(2)  
(3)  
(dBm)  
P
L
10  
30  
60  
90  
(1)  
(2)  
(3)  
20  
IMD3  
30  
45  
35  
25  
15  
50  
40  
30  
20  
P (dBm)  
i
P (dBm)  
i
Tamb = 25 °C; f = 2150 MHz; Z0 = 50 .  
(1) VSUP = 3.3 V.  
Tamb = 25 °C; f1 = 250 MHz; f2 = 251 MHz;  
Z0 = 50 .  
(1) VSUP = 3.3 V.  
(2) VSUP = 3.0 V.  
(3) VSUP = 2.7 V.  
(2) VSUP = 3.0 V.  
(3) VSUP = 2.7 V.  
Fig 14. Output power as function of input power at  
2150 MHz; typical values  
Fig 15. Output power and third order intermodulation  
as functions of input power around 250 MHz;  
typical values  
BGA2714_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 24 May 2007  
8 of 15  
BGA2714  
NXP Semiconductors  
MMIC wideband amplifier  
001aaf776  
001aaf777  
0
0
(1)  
(2)  
(3)  
(1)  
(2)  
(3)  
P ,  
L
P ,  
L
IMD3  
(dBm)  
IMD3  
(dBm)  
P
L
P
L
30  
60  
90  
30  
60  
90  
(1)  
(2)  
(3)  
(1)  
(2)  
(3)  
IMD3  
IMD3  
50  
40  
30  
20  
50  
40  
30  
20  
P (dBm)  
i
P (dBm)  
i
Tamb = 25 °C; f1 = 950 MHz; f2 = 951 MHz;  
Z0 = 50 .  
Tamb = 25 °C; f1 = 2150 MHz; f2 = 2151 MHz;  
Z0 = 50 .  
(1) VSUP = 3.3 V.  
(1) VSUP = 3.3 V.  
(2) VSUP = 3.0 V.  
(3) VSUP = 2.7 V.  
(2) VSUP = 3.0 V.  
(3) VSUP = 2.7 V.  
Fig 16. Output power and third order intermodulation  
as functions of input power around 950 MHz;  
typical values  
Fig 17. Output power and third order intermodulation  
as functions of input power around 2150 MHz;  
typical values  
001aaf778  
0
IM2  
(dBc)  
10  
20  
30  
(1)  
(2)  
40  
45  
40  
35  
30  
25  
P (dBm)  
i
Tamb = 25 °C; ISUP = 4.58 mA; VSUP = 3 V; Z0 = 50 .  
(1) f1 = 950 MHz; f2 = 951 MHz.  
(2) f1 = 250 MHz; f2 = 251 MHz.  
Fig 18. Second-order intermodulation distance as function of input power; typical values  
BGA2714_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 24 May 2007  
9 of 15  
BGA2714  
NXP Semiconductors  
MMIC wideband amplifier  
8.3 Scattering parameters  
Table 8.  
Scattering parameters  
ISUP = 4.58 mA; VSUP = 3 V; Pdrive = 40 dBm; Z0 = 50 ; Tamb = 25 °C; measured on demo board.  
f (MHz) S11  
Magnitude  
S21  
S12  
S22  
K
Angle  
(deg)  
Magnitude  
(ratio)  
Angle  
(deg)  
Magnitude  
(ratio)  
Angle  
(deg)  
Magnitude  
(ratio)  
Angle  
(deg)  
(ratio)  
0.155  
0.170  
0.280  
0.346  
0.365  
0.360  
0.335  
0.305  
0.255  
0.246  
0.197  
0.153  
0.121  
0.081  
0.066  
0.019  
100  
33.5  
10.88  
10.84  
10.69  
10.54  
10.46  
10.42  
10.9  
20.2  
43.8  
64.1  
85.9  
0.00364  
0.00183  
0.00077  
0.00057  
0.00111  
155.2 0.313  
14.2  
19.2  
36.4  
54.9  
74.4  
94.8  
11.2  
22.3  
50.7  
66.9  
11.2  
29.7  
200  
26.5  
21.9  
25.5  
122.0  
115.1  
80.2  
0.294  
0.396  
0.293  
0.291  
0.289  
0.315  
0.304  
0.310  
0.343  
0.335  
0.327  
0.310  
0.293  
0.266  
0.203  
400  
2.2  
600  
30.4  
62.7  
91.4  
800  
1000  
1200  
1400  
1600  
1800  
2000  
2200  
2400  
2600  
2800  
3000  
106.3 0.00129  
127.4 0.00091  
148.7 0.00118  
172.9 0.00090  
124.9 10.72  
156.3 10.90  
54.8  
55.9  
157.0  
7.1  
119.5 40.7  
140.2 31.9  
167.3 43.0  
167.0  
139.2  
83.5  
10.94  
11.22  
10.95  
10.71  
9.87  
166.3  
140.2  
115.3  
87.3  
0.00155  
0.00276  
0.00453  
0.00700  
0.00933  
0.01119  
0.01228  
172.3  
129.3  
101.6  
66.2  
45.0  
5.8  
23.9  
14.1  
9.0  
133.2  
63.4  
54.8  
1.7  
31.8  
6.5  
24.9  
93.6  
144.4  
9.09  
63.3  
51.9  
5.4  
7.74  
36.6  
24.8  
5.4  
6.77  
20.5  
14.1  
6.6  
5.8  
BGA2714_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 24 May 2007  
10 of 15  
 
BGA2714  
NXP Semiconductors  
MMIC wideband amplifier  
9. Test information  
30 mm  
IC1  
C2  
30  
C1  
mm  
L1  
IN  
OUT  
IN  
OUT  
C3  
V+  
V+  
001aaf779  
True size = 30 mm × 30 mm.  
Fig 19. PCB layout and demo board with components  
Table 9. List of components used for the typical application  
Component  
Description  
Value  
100 pF  
22 nF  
Dimensions  
C1, C2  
C3  
multilayer ceramic chip capacitor  
multilayer ceramic chip capacitor  
BGA2714 MMIC  
0603  
0603  
IC1  
SOT363  
L1  
not used  
BGA2714_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 24 May 2007  
11 of 15  
 
BGA2714  
NXP Semiconductors  
MMIC wideband amplifier  
10. Package outline  
Plastic surface-mounted package; 6 leads  
SOT363  
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1  
index  
A
A
1
1
2
3
c
e
1
b
p
L
p
w
M B  
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max  
0.30  
0.20  
1.1  
0.8  
0.25  
0.10  
2.2  
1.8  
1.35  
1.15  
2.2  
2.0  
0.45  
0.15  
0.25  
0.15  
mm  
0.1  
1.3  
0.65  
0.2  
0.2  
0.1  
REFERENCES  
JEDEC JEITA  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
04-11-08  
06-03-16  
SOT363  
SC-88  
Fig 20. Package outline SOT363  
BGA2714_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 24 May 2007  
12 of 15  
 
BGA2714  
NXP Semiconductors  
MMIC wideband amplifier  
11. Abbreviations  
Table 10. Abbreviations  
Acronym  
DC  
Description  
Direct Current  
IF  
Intermediate Frequency  
Low-Noise Amplifier  
Low-Noise Block converter  
Printed-Circuit Board  
Radio Frequency  
LNA  
LNB  
PCB  
RF  
12. Revision history  
Table 11. Revision history  
Document ID  
Release date  
20070524  
Data sheet status  
Change notice  
Supersedes  
BGA2714_1  
Product data sheet  
-
-
BGA2714_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 24 May 2007  
13 of 15  
 
 
BGA2714  
NXP Semiconductors  
MMIC wideband amplifier  
13. Legal information  
13.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
malfunction of a NXP Semiconductors product can reasonably be expected to  
13.2 Definitions  
result in personal injury, death or severe property or environmental damage.  
NXP Semiconductors accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or applications and therefore  
such inclusion and/or use is at the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
13.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
13.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
14. Contact information  
For additional information, please visit: http://www.nxp.com  
For sales office addresses, send an email to: salesaddresses@nxp.com  
BGA2714_1  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 01 — 24 May 2007  
14 of 15  
 
 
 
 
 
 
BGA2714  
NXP Semiconductors  
MMIC wideband amplifier  
15. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
2
3
4
5
6
7
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
8
Application information. . . . . . . . . . . . . . . . . . . 4  
Application examples . . . . . . . . . . . . . . . . . . . . 5  
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Scattering parameters . . . . . . . . . . . . . . . . . . 10  
8.1  
8.2  
8.3  
9
Test information. . . . . . . . . . . . . . . . . . . . . . . . 11  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12  
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13  
10  
11  
12  
13  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
13.1  
13.2  
13.3  
13.4  
14  
15  
Contact information. . . . . . . . . . . . . . . . . . . . . 14  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2007.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 24 May 2007  
Document identifier: BGA2714_1  
 

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