BGA2714,115 [NXP]
BGA2714 - MMIC wideband amplifier TSSOP 6-Pin;型号: | BGA2714,115 |
厂家: | NXP |
描述: | BGA2714 - MMIC wideband amplifier TSSOP 6-Pin 射频 微波 |
文件: | 总15页 (文件大小:95K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BGA2714
MMIC wideband amplifier
Rev. 01 — 24 May 2007
Product data sheet
1. Product profile
1.1 General description
Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 plastic SMD package.
Table 1.
Typical performance
Tamb = 25 °C; measured on demo board; typical values.
f
VSUP
(V)
ISUP
(mA)
4.58
4.58
4.58
Gp
NF
PL(1dB)
(dBm)
−7.8
PL(sat)
(dBm)
−2.4
IP3O
(dBm)
4.3
(MHz)
250
950
2150
(dB)
20.7
20.4
20.8
(dB)
2.4
2.2
3.0
3.0
3.0
−7.9
−3.4
2.1
3.0
−9.0
−4.7
0.0
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Internally matched to 50 Ω
I Wide frequency range (2.7 GHz at 3 dB gain bandwidth)
I Flat 21 dB gain (± 1 dB from DC up to 2500 MHz)
I Very low current (4.6 mA) at low supply voltage of 3 V
I Very good reverse isolation (> 50 dB up to 2 GHz)
I Good linearity with low second order and third order products
I Low noise (NF = 2.2 dB at 1 GHz)
I Unconditionally stable (K > 5)
1.3 Applications
I LNB IF amplifiers
I General purpose low noise wideband amplifier for frequencies between
DC and 2.7 GHz
BGA2714
NXP Semiconductors
MMIC wideband amplifier
2. Pinning information
Table 2.
Pinning
Pin
1
Description
VSUP
Simplified outline
Symbol
1
6
5
4
2, 5
3
GND2
6
3
RF_OUT
GND1
4
4
2, 5
1
2
3
6
RF_IN
sym052
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
BGA2714
plastic surface-mounted package; 6 leads
SOT363
4. Marking
Table 4.
Marking
Type number
BGA2714
Marking code
BA-
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VSUP
ISUP
Ptot
Parameter
Conditions
Min
Max
Unit
supply voltage
RF input AC coupled
-
4
V
supply current
-
10
200
mA
mW
total power dissipation
storage temperature
junction temperature
drive power
Tsp = 90 °C
-
Tstg
−65
+150 °C
Tj
-
-
150
°C
Pdrive
−20
dBm
BGA2714_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 24 May 2007
2 of 15
BGA2714
NXP Semiconductors
MMIC wideband amplifier
6. Thermal characteristics
Table 6.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
Typ
Unit
thermal resistance from junction to Ptot = 200 mW; Tsp = 90 °C
300
K/W
solder point
7. Characteristics
Table 7.
Characteristics
VSUP = 3 V; ISUP = 4.58 mA; Tamb = 25 °C; measured on demo board; unless otherwise specified.
Symbol Parameter
Conditions
Min
3.7
20
20
20
20
19
16
11
7
Typ
Max Unit
ISUP
Gp
supply current
power gain
4.58 5.7 mA
f = 100 MHz
f = 250 MHz
f = 950 MHz
f = 2150 MHz
f = 2500 MHz
f = 3000 MHz
f = 250 MHz
f = 950 MHz
f = 2150 MHz
f = 250 MHz
f = 950 MHz
f = 2150 MHz
f = 250 MHz
f = 950 MHz
f = 2150 MHz
f = 250 MHz
f = 950 MHz
f = 2150 MHz
20.8 21
20.7 21
20.4 21
20.8 22
19.5 21
16.8 18
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
RLin
RLout
ISL
input return loss
output return loss
isolation
13.9
8.9
15.9
10.6
10.8
9.8
58
-
-
-
-
-
-
-
-
-
12
10
10
8
55
55
45
-
59
49
NF
noise figure
2.4
2.2
3.0
2.7
2.5 dB
2.3 dB
3.2 dB
-
-
B−3dB
K
−3 dB bandwidth
3 dB below gain
at 1 GHz
-
-
GHz
Rollet stability factor
f = 250 MHz
f = 950 MHz
f = 2150 MHz
f = 250 MHz
f = 950 MHz
f = 2150 MHz
25
35
7
30
-
-
-
-
-
-
-
-
-
47
10
PL(sat)
saturated output power
−3
−4
−6
−2.4
−3.4
−4.7
dBm
dBm
dBm
dBm
dBm
dBm
PL(1dB) output power at 1 dB gain compression f = 250 MHz
−8.5 −7.8
−8.7 −7.9
f = 950 MHz
f = 2150 MHz
−10
−9
BGA2714_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 24 May 2007
3 of 15
BGA2714
NXP Semiconductors
MMIC wideband amplifier
Table 7.
Characteristics …continued
VSUP = 3 V; ISUP = 4.58 mA; Tamb = 25 °C; measured on demo board; unless otherwise specified.
Symbol Parameter
Conditions
f = 250 MHz
f = 950 MHz
f = 2150 MHz
f = 250 MHz
f = 950 MHz
f = 2150 MHz
f1H = 250 MHz;
Min
Typ
Max Unit
IP3I
input third-order intercept point
−17.4 −16.4 -
−19.1 −18.3 -
−21.8 −20.8 -
dBm
dBm
dBm
dBm
dBm
dBm
dBm
IP3O
output third-order intercept point
second harmonic output power
3.3
4.3
2.1
0
-
-
-
-
1.3
−1.0
−62
PL(2H)
−64
f2H = 500 MHz;
Pdrive = −40 dBm
f1H = 950 MHz;
2H = 1900 MHz;
drive = −40 dBm
−58
−36
−31
−60
−38
−33
-
-
-
dBm
dBc
dBc
f
P
∆IM2
second-order intermodulation distance f1 = 250 MHz;
f2 = 251 MHz;
Pdrive = −40 dBm
f1 = 950 MHz;
f2 = 951 MHz;
Pdrive = −40 dBm
8. Application information
Figure 1 shows a typical application circuit for the BGA2714 MMIC. The device is
internally matched to 50 Ω, and therefore does not need any external matching. The value
of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF
for applications above 100 MHz. However, when the device is operated below 100 MHz,
the capacitor value should be increased.
The 22 nF supply decoupling capacitor C1 should be located as close as possible to the
MMIC.
The PCB top ground plane, connected to pins 2, 4 and 5 must be as close as possible to
the MMIC, preferably also below the MMIC. When using via holes, use multiple via holes
as close as possible to the MMIC.
V
S
C1
V
S
C2
C3
RF_IN
RF_OUT
RF input
RF output
001aaf761
GND1
GND2
Fig 1. Typical application circuit
BGA2714_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 24 May 2007
4 of 15
BGA2714
NXP Semiconductors
MMIC wideband amplifier
8.1 Application examples
wideband
amplifier
wideband
amplifier
LNA
mixer
mixer
to IF circuit
or demodulator
from RF
circuit
to IF circuit
or demodulator
antenna
oscillator
001aaf763
oscillator
001aaf762
The MMIC is very suitable as IF amplifier in e.g.
LNB’s. The excellent wideband characteristics make
it an easy building block.
As second amplifier after an LNA, the MMIC offers
an easy matching, low noise solution.
Fig 2. Application as IF amplifier
Fig 3. Application as RF amplifier
8.2 Graphs
90°
1.0
+1
0.8
135°
45°
+0.5
+2
0.6
0.4
+0.2
+5
0.2
100 MHz
0
0.2
0.5
1
2
5
10
0°
0
180°
3 GHz
−5
−0.2
−2
−0.5
−135°
−45°
−1
1.0
001aaf764
−90°
Tamb = 25 °C; ISUP = 4.58 mA; VSUP = 3 V; Pdrive = −40 dBm; Z0 = 50 Ω.
Fig 4. Input reflection coefficient (S11); typical values
BGA2714_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 24 May 2007
5 of 15
BGA2714
NXP Semiconductors
MMIC wideband amplifier
90°
1.0
+1
0.8
135°
45°
+0.5
+2
0.6
0.4
0.2
+0.2
+5
0
0.2
0.5
1
2
5
10
0°
0
180°
3 GHz
100 MHz
−5
−0.2
−2
−0.5
−135°
−45°
−1
1.0
001aaf765
−90°
Tamb = 25 °C; ISUP = 4.58 mA; VSUP = 3 V; Pdrive = −40 dBm; Z0 = 50 Ω.
Fig 5. Output reflection coefficient (S22); typical values
001aaf766
001aaf767
30
30
G
G
p
p
(dB)
(dB)
(1)
(2)
(1)
20
20
(3)
(2)
(3)
10
10
0
0
0
1000
2000
3000
0
1000
2000
3000
f (MHz)
f (MHz)
Tamb = 25 °C; Pdrive = −40 dBm; Z0 = 50 Ω.
(1) VSUP = 3.3 V; ISUP = 4.96 mA.
(2) VSUP = 3.0 V; ISUP = 4.58 mA.
(3) VSUP = 2.7 V; ISUP = 4.16 mA.
VSUP = 3 V; Pdrive = −40 dBm; Z0 = 50 Ω.
(1) Tamb = −40 °C; ISUP = 5.01 mA.
(2) Tamb = +25 °C; ISUP = 4.58 mA.
(3) Tamb = +85 °C; ISUP = 4.22 mA.
Fig 6. Insertion power gain as function of frequency;
typical values
Fig 7. Insertion power gain as function of frequency;
typical values
BGA2714_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 24 May 2007
6 of 15
BGA2714
NXP Semiconductors
MMIC wideband amplifier
001aaf768
001aaf769
2
0
10
ISL
(dB)
K
−20
−40
−60
−80
10
1
−1
10
0
1000
2000
3000
0
1000
2000
3000
4000
f (MHz)
f (MHz)
Tamb = 25 °C; ISUP = 4.58 mA; VSUP = 3 V;
Pdrive = −40 dBm; Z0 = 50 Ω.
Tamb = 25 °C; ISUP = 4.58 mA; VSUP = 3 V;
Z0 = 50 Ω.
Fig 8. Isolation as function of frequency; typical
values
Fig 9. Rollet stability factor as function of frequency;
typical values
001aaf770
001aaf771
5
5
NF
NF
(dB)
(dB)
4
4
3
3
(1)
(1)
(2)
(2)
(3)
2
2
(3)
1
1
0
1000
2000
3000
0
1000
2000
3000
f (MHz)
f (MHz)
Tamb = 25 °C; Z0 = 50 Ω.
VSUP = 3 V; Z0 = 50 Ω.
(1) VSUP = 3.3 V; ISUP = 4.96 mA.
(2) VSUP = 3.0 V; ISUP = 4.58 mA.
(3) VSUP = 2.7 V; ISUP = 4.16 mA.
(1) Tamb = −40 °C; ISUP = 5.01 mA.
(2) Tamb = +25 °C; ISUP = 4.58 mA.
(3) Tamb = +85 °C; ISUP = 4.22 mA.
Fig 10. Noise figure as function of frequency
Fig 11. Noise figure as function of frequency
BGA2714_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 24 May 2007
7 of 15
BGA2714
NXP Semiconductors
MMIC wideband amplifier
001aaf772
001aaf773
0
0
P
P
L
L
(dBm)
(dBm)
(1)
(2)
(3)
(1)
(2)
(3)
−10
−10
−20
−20
−30
−45
−30
−45
−35
−25
−15
−35
−25
−15
P (dBm)
i
P (dBm)
i
Tamb = 25 °C; f = 250 MHz; Z0 = 50 Ω.
(1) VSUP = 3.3 V.
Tamb = 25 °C; f = 950 MHz; Z0 = 50 Ω.
(1) VSUP = 3.3 V.
(2) VSUP = 3.0 V.
(3) VSUP = 2.7 V.
(2) VSUP = 3.0 V.
(3) VSUP = 2.7 V.
Fig 12. Output power as function of input power at
250 MHz; typical values
Fig 13. Output power as function of input power at
950 MHz; typical values
001aaf774
001aaf775
0
0
(1)
(2)
(3)
P ,
L
P
L
IMD3
(dBm)
(1)
(2)
(3)
(dBm)
P
L
−10
−30
−60
−90
(1)
(2)
(3)
−20
IMD3
−30
−45
−35
−25
−15
−50
−40
−30
−20
P (dBm)
i
P (dBm)
i
Tamb = 25 °C; f = 2150 MHz; Z0 = 50 Ω.
(1) VSUP = 3.3 V.
Tamb = 25 °C; f1 = 250 MHz; f2 = 251 MHz;
Z0 = 50 Ω.
(1) VSUP = 3.3 V.
(2) VSUP = 3.0 V.
(3) VSUP = 2.7 V.
(2) VSUP = 3.0 V.
(3) VSUP = 2.7 V.
Fig 14. Output power as function of input power at
2150 MHz; typical values
Fig 15. Output power and third order intermodulation
as functions of input power around 250 MHz;
typical values
BGA2714_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 24 May 2007
8 of 15
BGA2714
NXP Semiconductors
MMIC wideband amplifier
001aaf776
001aaf777
0
0
(1)
(2)
(3)
(1)
(2)
(3)
P ,
L
P ,
L
IMD3
(dBm)
IMD3
(dBm)
P
L
P
L
−30
−60
−90
−30
−60
−90
(1)
(2)
(3)
(1)
(2)
(3)
IMD3
IMD3
−50
−40
−30
−20
−50
−40
−30
−20
P (dBm)
i
P (dBm)
i
Tamb = 25 °C; f1 = 950 MHz; f2 = 951 MHz;
Z0 = 50 Ω.
Tamb = 25 °C; f1 = 2150 MHz; f2 = 2151 MHz;
Z0 = 50 Ω.
(1) VSUP = 3.3 V.
(1) VSUP = 3.3 V.
(2) VSUP = 3.0 V.
(3) VSUP = 2.7 V.
(2) VSUP = 3.0 V.
(3) VSUP = 2.7 V.
Fig 16. Output power and third order intermodulation
as functions of input power around 950 MHz;
typical values
Fig 17. Output power and third order intermodulation
as functions of input power around 2150 MHz;
typical values
001aaf778
0
∆IM2
(dBc)
−10
−20
−30
(1)
(2)
−40
−45
−40
−35
−30
−25
P (dBm)
i
Tamb = 25 °C; ISUP = 4.58 mA; VSUP = 3 V; Z0 = 50 Ω.
(1) f1 = 950 MHz; f2 = 951 MHz.
(2) f1 = 250 MHz; f2 = 251 MHz.
Fig 18. Second-order intermodulation distance as function of input power; typical values
BGA2714_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 24 May 2007
9 of 15
BGA2714
NXP Semiconductors
MMIC wideband amplifier
8.3 Scattering parameters
Table 8.
Scattering parameters
ISUP = 4.58 mA; VSUP = 3 V; Pdrive = −40 dBm; Z0 = 50 Ω; Tamb = 25 °C; measured on demo board.
f (MHz) S11
Magnitude
S21
S12
S22
K
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
(ratio)
0.155
0.170
0.280
0.346
0.365
0.360
0.335
0.305
0.255
0.246
0.197
0.153
0.121
0.081
0.066
0.019
100
33.5
10.88
10.84
10.69
10.54
10.46
10.42
−10.9
−20.2
−43.8
−64.1
−85.9
0.00364
0.00183
0.00077
0.00057
0.00111
−155.2 0.313
−14.2
−19.2
−36.4
−54.9
−74.4
−94.8
11.2
22.3
50.7
66.9
11.2
29.7
200
26.5
−21.9
−25.5
122.0
115.1
80.2
0.294
0.396
0.293
0.291
0.289
0.315
0.304
0.310
0.343
0.335
0.327
0.310
0.293
0.266
0.203
400
−2.2
600
−30.4
−62.7
−91.4
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
−106.3 0.00129
−127.4 0.00091
−148.7 0.00118
−172.9 0.00090
−124.9 10.72
−156.3 10.90
−54.8
−55.9
157.0
7.1
−119.5 40.7
−140.2 31.9
−167.3 43.0
167.0
139.2
83.5
10.94
11.22
10.95
10.71
9.87
166.3
140.2
115.3
87.3
0.00155
0.00276
0.00453
0.00700
0.00933
0.01119
0.01228
172.3
129.3
101.6
66.2
45.0
5.8
23.9
14.1
9.0
133.2
63.4
54.8
1.7
31.8
6.5
−24.9
−93.6
144.4
9.09
63.3
51.9
5.4
7.74
36.6
24.8
5.4
6.77
20.5
14.1
−6.6
5.8
BGA2714_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 24 May 2007
10 of 15
BGA2714
NXP Semiconductors
MMIC wideband amplifier
9. Test information
30 mm
IC1
C2
30
C1
mm
L1
IN
OUT
IN
OUT
C3
V+
V+
001aaf779
True size = 30 mm × 30 mm.
Fig 19. PCB layout and demo board with components
Table 9. List of components used for the typical application
Component
Description
Value
100 pF
22 nF
Dimensions
C1, C2
C3
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
BGA2714 MMIC
0603
0603
IC1
SOT363
L1
not used
BGA2714_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 24 May 2007
11 of 15
BGA2714
NXP Semiconductors
MMIC wideband amplifier
10. Package outline
Plastic surface-mounted package; 6 leads
SOT363
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1
index
A
A
1
1
2
3
c
e
1
b
p
L
p
w
M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max
0.30
0.20
1.1
0.8
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.25
0.15
mm
0.1
1.3
0.65
0.2
0.2
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-08
06-03-16
SOT363
SC-88
Fig 20. Package outline SOT363
BGA2714_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 24 May 2007
12 of 15
BGA2714
NXP Semiconductors
MMIC wideband amplifier
11. Abbreviations
Table 10. Abbreviations
Acronym
DC
Description
Direct Current
IF
Intermediate Frequency
Low-Noise Amplifier
Low-Noise Block converter
Printed-Circuit Board
Radio Frequency
LNA
LNB
PCB
RF
12. Revision history
Table 11. Revision history
Document ID
Release date
20070524
Data sheet status
Change notice
Supersedes
BGA2714_1
Product data sheet
-
-
BGA2714_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 24 May 2007
13 of 15
BGA2714
NXP Semiconductors
MMIC wideband amplifier
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of a NXP Semiconductors product can reasonably be expected to
13.2 Definitions
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
14. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
BGA2714_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 24 May 2007
14 of 15
BGA2714
NXP Semiconductors
MMIC wideband amplifier
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
7
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
8
Application information. . . . . . . . . . . . . . . . . . . 4
Application examples . . . . . . . . . . . . . . . . . . . . 5
Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Scattering parameters . . . . . . . . . . . . . . . . . . 10
8.1
8.2
8.3
9
Test information. . . . . . . . . . . . . . . . . . . . . . . . 11
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 24 May 2007
Document identifier: BGA2714_1
相关型号:
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