BGA3023 [NXP]
RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER;型号: | BGA3023 |
厂家: | NXP |
描述: | RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 放大器 射频 微波 功率放大器 |
文件: | 总14页 (文件大小:214K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BGA3023
ꢀ
2
6
+
1.2 GHz 20 dB gain CATV amplifier
Rev. 2 — 25 February 2015
Product data sheet
1. Product profile
1.1 General description
The BGA3023 MMIC is a dual wideband amplifier with internal biasing. It is a Medium
Power Amplifier (MPA), specifically designed as an output stage for high linearity CATV
optical mini- and midi-nodes, operating over a frequency range of 40 MHz to 1200 MHz.
The MPA is housed in a lead free 8-pin HSO8 package.
1.2 Features and benefits
Internally biased
High gain output 1dB compression
point of 30 dBm
Frequency range of 40 MHz to 1200 MHz 75 input and output impedance
High linearity with an IP3O of 46.5 dBm and ICC(tot) can be controlled between
an IP2O of 85 dBm
175 mA and 350 mA
Operating from 5 V to 8 V supply
Integrated feedback
1.3 Applications
CATV infrastructure network medium power output stage in optical nodes (FTTx),
distribution amplifiers, trunk amplifiers and line extenders
1.4 Quick reference data
Table 1.
Quick reference data
Tamb = 25 C; typical values at VCC = 8 V; ZS = ZL = 75 ; input and output connected with 1:1 balun, VI(CTRL) = 3.3 V or open
(maximum total supply current); 40 MHz f1 1200 MHz unless otherwise specified.
Symbol
VCC
Parameter
Conditions
Min Typ
Max Unit
supply voltage
RF input AC coupled
7.6
8.0
350
-
8.4
V
ICC(tot)
Tamb
total supply current
-
-
mA
C
ambient temperature
40
+85
PL(1dB)
IP3O
output power at 1 dB gain compression
output third-order intercept point
output second-order intercept point
-
-
-
30
-
-
-
dBm
dBm
dBm
[1]
[2]
46.5
85
IP2O
[1] Fundamental frequency f1 = 500 MHz, fundamental frequency f2 = 501 MHz. The intermodulation product (IM3) is measured at
2 f1 f2 = 499 MHz. The output power of the fundamental frequencies is 10 dBm per frequency.
[2] Fundamental frequency f1 = 240 MHz, fundamental frequency f2 = 260 MHz. The intermodulation product (IM2) is measured at
f1 + f2 = 500 MHz. The output power of the fundamental frequencies is 10 dBm per frequency.
BGA3023
NXP Semiconductors
1.2 GHz 20 dB gain CATV amplifier
2. Pinning information
2.1 Pinning
$03$B,1 ꢀ
703B6(16 ꢂ
&75/ ꢄ
ꢁ $03$B287
ꢃ 9
ꢅ 9
&&
&&
%*$ꢁꢂꢃꢄ
$03%B,1 ꢆ
ꢇ $03%B287
DDDꢀꢁꢂꢃꢄꢃꢅ
Fig 1. Pin configuration for SOT786-2
2.2 Pin description
Table 2.
Pin description
Symbol
AMPA_IN
TMP_SENS
CTRL
Pin
1
Description
input amplifier A
temperature sense
total supply current control
input amplifier B
output amplifier B [1]
supply [1]
2
3
AMPB_IN
AMPB_OUT
VCC
4
5
6
VCC
7
supply [1]
AMPA_OUT
GND
8
output amplifier A [1]
exposed die pad [2]
ground
[1] See Figure 2 for correct connection.
[2] The center metal base of the HSO8 also functions as heatsink for the power amplifier.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BGA3023
HSO8
plastic thermal enhanced small outline package;
8 leads; body width 3.9 mm; exposed die pad
SOT786-2
BGA3023
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 25 February 2015
2 of 14
BGA3023
NXP Semiconductors
1.2 GHz 20 dB gain CATV amplifier
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCC
Parameter
Conditions
Min Max Unit
supply voltage
RF input AC coupled
0.6 +12
0.6 +8
0.6 +8
V
VI(CTRL)
VI(TMP_SENS)
Pi
input voltage on pin CTRL
input voltage on pin TMP_SENS
input power
V
V
[1]
single tone; on balun
-
20
dBm
Tstg
storage temperature
junction temperature
ambient temperature
electrostatic discharge voltage
65 +150 C
Tj
-
150
C
C
kV
Tamb
40 +85
VESD
Human Body Model (HBM);
According JEDEC standard 22-A114E
2
-
-
Charged Device Model (CDM);
500
V
According JEDEC standard 22-C101B
[1] Pi = 17 dBm on AMPA_IN (pin 1) and AMPB_IN (pin 4).
5. Thermal characteristics
Table 5.
Symbol
Rth(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
Typ Unit
[1][2]
15
K/W
[1] Case is ground solder pad.
[2] Thermal resistance measured using infrared measurement technique, device mounted on application board
and placed in still air.
BGA3023
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 25 February 2015
3 of 14
BGA3023
NXP Semiconductors
1.2 GHz 20 dB gain CATV amplifier
6. Characteristics
Table 6.
Characteristics at VCC = 8 V; ICC = 350 mA
Tamb = 25 C; typical values at VCC = 8 V; ZS = ZL = 75 ; input and output connected with
1:1 balun, VI(CTRL) = 3.3 V or open (maximum total supply current); 40 MHz f1 1200 MHz unless
otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
VCC
ICC(tot)
s212
SLsl
FL
supply voltage
RF input AC coupled
7.6 8.0 8.4
V
total supply current
insertion power gain
slope straight line
-
-
-
-
-
350
20
-
-
mA
dB
dB
dB
dBm
f = 40 MHz
2.2 -
[1]
flatness of frequency response
0.4
30
-
-
PL(1dB) output power at
1 dB gain compression
[2]
[3]
IP3O
output third-order
intercept point
-
-
46.5 -
dBm
dBm
IP2O
output second-order
intercept point
85
-
[4]
[4]
CTB
CSO
composite triple beat
VO = 43 dBmV
VO = 43 dBmV
-
-
64
75
-
-
dBc
dBc
composite second-order
distortion
NF
noise figure
f = 500 MHz
-
-
-
-
-
-
-
-
-
-
-
-
-
5.0
-
-
-
-
-
-
-
-
-
-
-
-
-
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
RLin
input return loss
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 1000 MHz
f = 1000 MHz to 1200 MHz
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 1000 MHz
f = 1000 MHz to 1200 MHz
18
19
19
19
19
15
17
19
17
17
17
14
RLout
output return loss
[1] Flatness is defined as peak deviation to straight line.
[2] Fundamental frequency f1 = 500 MHz, fundamental frequency f2 = 501 MHz. The intermodulation product
(IM3) is measured at 2 f1 f2 = 499 MHz. The output power of the fundamental frequencies is 10 dBm
per frequency.
[3] Fundamental frequency f1 = 240 MHz, fundamental frequency f2 = 260 MHz. The intermodulation product
(IM2) is measured at f1 + f2 = 500 MHz. The output power of the fundamental frequencies is 10 dBm per
frequency.
[4] Measured with 79 NTSC channels.
BGA3023
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 25 February 2015
4 of 14
BGA3023
NXP Semiconductors
1.2 GHz 20 dB gain CATV amplifier
Table 7.
Characteristics at VCC = 8 V; ICC = 175 mA
Tamb = 25 C; typical values at VCC = 8 V; ZS = ZL = 75 ; input and output connected with
1:1 balun, VI(CTRL) = 0 V (minimum total supply current); 40 MHz f1 1200 MHz unless otherwise
specified.
Symbol Parameter
Conditions
Min Typ
Max Unit
VCC
ICC(tot)
s212
SLsl
FL
supply voltage
RF input AC coupled
7.6 8.0
8.4
V
total supply current
insertion power gain
slope straight line
-
-
-
-
175
19.4
2.7
0.5
-
-
-
-
mA
dB
dB
dB
f = 40 MHz
[1]
flatness of
frequency response
PL(1dB) output power at
1 dB gain compression
-
-
-
25
38
67
-
-
-
dBm
dBm
dBm
[2]
[3]
IP3O
output third-order
intercept point
IP2O
output second-order
intercept point
[4]
[4]
CTB
CSO
composite triple beat
VO = 35 dBmV
VO = 35 dBmV
-
-
65
75
-
-
dBc
dBc
composite second-order
distortion
NF
noise figure
f = 500 MHz
-
-
-
-
-
-
-
-
-
-
-
-
-
3.7
-
-
-
-
-
-
-
-
-
-
-
-
-
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
RLin
input return loss
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 1000 MHz
f = 1000 MHz to 1200 MHz
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 1000 MHz
f = 1000 MHz to 1200 MHz
20
20
18
18
17
13
20
19
17
17
17
13
RLout
output return loss
[1] Flatness is defined as peak deviation to straight line.
[2] Fundamental frequency f1 = 500 MHz, fundamental frequency f2 = 501 MHz. The intermodulation product
(IM3) is measured at 2 f1 f2 = 499 MHz. The output power of the fundamental frequencies is 10 dBm
per frequency.
[3] Fundamental frequency f1 = 240 MHz, fundamental frequency f2 = 260 MHz. The intermodulation product
(IM2) is measured at f1 + f2 = 500 MHz. The output power of the fundamental frequencies is 10 dBm per
frequency.
[4] Measured with 79 NTSC channels.
BGA3023
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 25 February 2015
5 of 14
BGA3023
NXP Semiconductors
1.2 GHz 20 dB gain CATV amplifier
Table 8.
Characteristics at VCC = 5 V; ICC = 165 mA
Tamb = 25 C; typical values at VCC = 5 V; ZS = ZL = 75 ; input and output connected with
1:1 balun, VI(CTRL) = 0 V (minimum total supply current); 40 MHz f1 1200 MHz unless otherwise
specified.
Symbol Parameter
Conditions
Min Typ
Max Unit
VCC
ICC(tot)
s212
SLsl
FL
supply voltage
RF input AC coupled
4.75 5.00 5.25 V
total supply current
insertion power gain
slope straight line
-
-
-
-
165
19.5
2.6
0.5
-
-
-
-
mA
dB
dB
dB
f = 40 MHz
[1]
flatness of
frequency response
PL(1dB) output power at
1 dB gain compression
-
-
-
23
38
68
-
-
-
dBm
dBm
dBm
[2]
[3]
IP3O
output third-order
intercept point
IP2O
output second-order
intercept point
[4]
[4]
CTB
CSO
composite triple beat
VO = 35 dBmV
VO = 35 dBmV
-
-
65
75
-
-
dBc
dBc
composite second-order
distortion
NF
noise figure
f = 500 MHz
-
-
-
-
-
-
-
-
-
-
-
-
-
3.7
-
-
-
-
-
-
-
-
-
-
-
-
-
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
RLin
input return loss
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 1000 MHz
f = 1000 MHz to 1200 MHz
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 1000 MHz
f = 1000 MHz to 1200 MHz
20
20
19
18
18
13
20
19
17
17
17
13
RLout
output return loss
[1] Flatness is defined as peak deviation to straight line.
[2] Fundamental frequency f1 = 500 MHz, fundamental frequency f2 = 501 MHz. The intermodulation product
(IM3) is measured at 2 f1 f2 = 499 MHz. The output power of the fundamental frequencies is 10 dBm
per frequency.
[3] Fundamental frequency f1 = 240 MHz, fundamental frequency f2 = 260 MHz. The intermodulation product
(IM2) is measured at f1 + f2 = 500 MHz. The output power of the fundamental frequencies is 10 dBm per
frequency.
[4] Measured with 79 NTSC channels.
BGA3023
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 25 February 2015
6 of 14
BGA3023
NXP Semiconductors
1.2 GHz 20 dB gain CATV amplifier
7. Application information
The BGA3023 can be used in other applications. Please contact your local sales
representative for more information. Application notes are available on the NXP website.
7.1 Application board
-ꢄ
&ꢀꢊ
&ꢀꢀ
&ꢆ
&ꢇ
&ꢉ
5ꢄ
8ꢀ
/ꢂ
/ꢄ
ꢄ
ꢂ ꢅ ꢃ
&ꢅ
&ꢃ
ꢀ
ꢆ
ꢁ
&ꢀꢂ
5ꢆ
7ꢀ
7ꢂ
-ꢀ
&ꢀ
/ꢀ
&ꢂ
&ꢀꢆ
&ꢀꢄ -ꢂ
ꢇ
5)ꢈ,1
&ꢄ
&ꢀꢇ
ꢉ
5)ꢈ287
DDDꢀꢁꢂꢆꢂꢃꢁ
See Table 9 for list of components.
Fig 2. Circuit MPA only evaluation board
BGA3023
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 25 February 2015
7 of 14
BGA3023
NXP Semiconductors
1.2 GHz 20 dB gain CATV amplifier
-ꢄ
&ꢀꢊ
&ꢆ
&ꢇ
&ꢅ
5ꢄ
8ꢀ
&ꢀꢆ
/ꢂ
&ꢀꢂ
&ꢀꢀ
7ꢂ
&ꢂ
7ꢀ
-ꢀ
-ꢂ
&ꢀ /ꢀ
5ꢆ &ꢀꢄ
/ꢄ
&ꢀꢇ
&ꢄ
&ꢃ
&ꢉ
DDDꢀꢁꢂꢆꢂꢃꢂ
See Table 9 for list of components.
Fig 3. Printed-Circuit Board (PCB) layout MPA only evaluation board
Table 9.
List of components
See Figure 2 for schematics and Figure 3 for Printed-Circuit Board (PCB).
Component
Description
Value
Remarks
C1, C3, C4, C5, C9,
C11, C12, C13
capacitor
10 nF
Murata GRM155R71E103KA01D
C2
capacitor
0.47 pF
Phycomp 2238 869 14477
Murata GRM155R61A104KA01D
Murata GRM1555C1H1R0CA01D
Bomar 861V509ER6
C10
capacitor
100 nF
C6, C7, C14, C15
capacitor
1 pF
J1, J2
J3
F-connector
header 6-pin
SMD inductor
choke
75
-
Molex 22-29-2061
L1
1.0 nH
Murata LQG15HS1N0S02D
Murata BLM15HD182SN1D
Yageo RC0402FR-0715RL
Murata RC0402JR-070RL
MACOM MABA-007159-000000
MACOM MABA-010245-CT1160
NXP
L2, L3
R3
-
chip resistor
chip resistor
balun transformer
balun transformer
BGA3023
15
R4
0
T1
-
-
-
T2
U1
BGA3023
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 25 February 2015
8 of 14
BGA3023
NXP Semiconductors
1.2 GHz 20 dB gain CATV amplifier
627ꢅꢆꢀꢇꢃ
ꢄꢋꢀꢉ
ꢂꢋꢇꢉ
ꢀꢋꢇꢇ
ꢀꢋꢉꢇ
ꢊꢋꢆꢇ
ꢅ
ꢄꢋꢊꢃ
ꢈ ꢈꢊꢋꢄꢇ
ꢊꢋꢆꢂ
ꢊꢋꢅꢇ ꢊꢋꢁꢇ
ꢊꢋꢅꢃ
ꢊꢋꢅ
ꢊꢋꢄ
ꢊꢋꢇ
ꢀꢋꢃꢇ
ꢊꢋꢄꢄ
ꢈ ꢈꢊꢋꢄꢊ
ꢃꢋꢄꢇ
ꢊꢋꢄꢆꢇ
VROGHUꢈPDVNꢈWRSꢈKROH
WRSꢈPHWDOꢈꢈꢈꢈꢈꢈꢈꢈꢈꢈꢈ
VROGHUꢈSDVWH
YLDꢈKROH
'LPHQVLRQVꢈLQꢈPP
DDDꢀꢁꢂꢆꢂꢅꢇ
Fig 4. Recommended Printed-Circuit Board (PCB) footprint
BGA3023
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 25 February 2015
9 of 14
BGA3023
NXP Semiconductors
1.2 GHz 20 dB gain CATV amplifier
8. Package outline
+62ꢀꢈꢉSODVWLFꢉWKHUPDOꢉHQKDQFHGꢉVPDOOꢉRXWOLQHꢉSDFNDJHꢊ
ꢀꢉOHDGVꢊꢉERG\ꢉZLGWKꢉꢁꢋꢌꢉPPꢊꢉH[SRVHGꢉGLHꢉSDG
627ꢅꢀꢆꢇꢃ
'
$
(
;
F
\
H[SRVHGꢈGLHꢈSDG
Y
$
+
(
=
'
K
ꢇ
ꢁ
$
ꢂ
(
K
$
ꢍ$ ꢎ
ꢄ
$
ꢀ
ș
/
S
SLQꢈꢀꢈꢈLQGH[
/
ꢀ
ꢆ
GHWDLOꢈ;
H
Z
E
S
ꢊ
ꢂꢋꢇꢈ
ꢇꢈPP
VFDOH
'LPHQVLRQVꢈꢍPPꢈDUHꢈWKHꢈRULJLQDOꢈGLPHQVLRQVꢎ
ꢍꢀꢎ
ꢍꢂꢎ
ꢍꢀꢎ
8QLW
PD[
PP QRP ꢀꢋꢃ
PLQ
$
$
$
$
E
F
'
'
K
(
(
K
H
+
/
/
S
Y
Z
\
=
ș
ꢀ
ꢂ
ꢄ
S
(
ꢁ
ꢊ
ꢊꢋꢀ ꢀꢋꢅ
ꢊꢋꢊ ꢀꢋꢆ
ꢊꢋꢆꢉ ꢊꢋꢂꢇ ꢇꢋꢊ ꢄꢋꢀꢃ ꢆꢋꢊ ꢂꢋꢆꢉ
ꢊꢋꢄꢅ ꢊꢋꢀꢉ ꢆꢋꢁ ꢂꢋꢉꢃ ꢄꢋꢁ ꢂꢋꢂꢉ
ꢅꢋꢂ
ꢇꢋꢁ
ꢀꢋꢊ
ꢊꢋꢆ
ꢊꢋꢁ
ꢊꢋꢄ
ꢊꢋꢂꢇ
ꢀꢋꢂꢃ
ꢀꢋꢊꢇ
ꢊꢋꢂꢇ ꢊꢋꢂꢇ ꢊꢋꢀ
1RWH
ꢀꢋꢈ3ODVWLFꢈRUꢈPHWDOꢈSURWUXVLRQVꢈRIꢈꢊꢋꢀꢇꢈPPꢈPD[LPXPꢈSHUꢈVLGHꢈDUHꢈQRWꢈLQFOXGHGꢋꢈ
ꢂꢋꢈ3ODVWLFꢈRUꢈPHWDOꢈSURWUXVLRQVꢈRIꢈꢊꢋꢂꢇꢈPPꢈPD[LPXPꢈSHUꢈVLGHꢈDUHꢈQRWꢈLQFOXGHGꢋꢈ
VRWꢄꢈꢉꢀꢊBSR
5HIHUHQFHV
2XWOLQH
YHUVLRQ
(XURSHDQ
SURMHFWLRQ
,VVXHꢈGDWH
,(&
-('(&
-(,7$
ꢀꢄꢌꢊꢁꢌꢊꢂ
ꢀꢆꢌꢊꢇꢌꢂꢃ
627ꢃꢁꢅꢌꢂ
Fig 5. Package outline SOT786-2 (HSO8)
BGA3023
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 25 February 2015
10 of 14
BGA3023
NXP Semiconductors
1.2 GHz 20 dB gain CATV amplifier
9. Abbreviations
Table 10. Abbreviations
Acronym
CATV
FTTx
Description
Community Antenna TeleVision
Fiber To The “x”
MMIC
MPA
Monolithic Microwave Integrated Circuit
Medium Power Amplifier
Surface Mounted Device
SMD
10. Revision history
Table 11. Revision history
Document ID
BGA3023 v.2
BGA3023 v.1
Release date
Data sheet status
Change notice
Supersedes
BGA3023 v.1
-
20150225
20141128
Product data sheet
-
-
Preliminary data sheet
BGA3023
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 25 February 2015
11 of 14
BGA3023
NXP Semiconductors
1.2 GHz 20 dB gain CATV amplifier
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
11.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
11.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
BGA3023
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 25 February 2015
12 of 14
BGA3023
NXP Semiconductors
1.2 GHz 20 dB gain CATV amplifier
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
non-automotive qualified products in automotive equipment or applications.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BGA3023
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 25 February 2015
13 of 14
BGA3023
NXP Semiconductors
1.2 GHz 20 dB gain CATV amplifier
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
2.1
2.2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2
3
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 7
Application board . . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
4
5
6
7
7.1
8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2015.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 25 February 2015
Document identifier: BGA3023
相关型号:
BGA310
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
INFINEON
BGA312
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
INFINEON
BGA318
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz)
INFINEON
BGA324
The Atmel SAMA5D3 series is a high-performance, power-efficient embedded MPU based on the ARM® Cortexâ¢-A5 processor, achieving 536 MHz with power consumption levels below 0.5 mW in low-power mode.
ATMEL
BGA420
Si-MMIC-Amplifierin SIEGET 25-Technologie (Cascadable 50 ヘ-gain block Unconditionally stable)
INFINEON
©2020 ICPDF网 联系我们和版权申明