BGD502_01 [NXP]
550 MHz, 18.5 dB gain power doubler amplifier; 550 MHz的18.5 dB增益功率倍增放大器器
| 型号： | BGD502_01 |
| 厂家： | 
NXP |
| 描述： | 550 MHz, 18.5 dB gain power doubler amplifier |
| 文件： | 总8页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BGD502
550 MHz, 18.5 dB gain power
doubler amplifier
Product specification
2001 Nov 15
Supersedes data of 1995 Oct 25
Philips Semiconductors
Productspecification
550 MHz, 18.5 dB gain power doubler amplifier
BGD502
FEATURES
PINNING - SOT115J
PIN
• Excellent linearity
DESCRIPTION
• Extremely low noise
1
2, 3
5
input
• Silicon nitride passivation
• Rugged construction
common
+VB
• TiPtAu metallized crystals ensure optimal reliability.
7, 8
9
common
output
DESCRIPTION
Hybrid amplifier modules for CATV systems operating
over a frequency range of 40 to 550 MHz at a voltage
supply of 24 V (DC).
handbook, halfpage
2
8
1
3
5
7
9
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
f = 50 MHz
MIN.
18
MAX.
19
UNIT
dB
Gp
Itot
power gain
f = 550 MHz
VB = 24 V
18.8
20.8
435
dB
total current consumption (DC)
−
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER
MIN.
MAX.
UNIT
Vi
RF input voltage
−
65
dBmV
°C
Tstg
Tmb
storage temperature
−40
−20
+100
+100
operating mounting base temperature
°C
2001 Nov 15
2
Philips Semiconductors
Productspecification
550 MHz, 18.5 dB gain power doubler amplifier
BGD502
CHARACTERISTICS
Table 1 Bandwidth 40 to 550 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω.
SYMBOL
Gp
PARAMETER
power gain
CONDITIONS
f = 50 MHz
MIN.
18
TYP.
MAX.
19
UNIT
dB
−
−
−
−
−
−
−
−
−
−
−
−
f = 550 MHz
18.8
0.2
−
20.8
2.2
±0.3
−
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
SL
FL
s11
slope cable equivalent
flatness of frequency response
input return losses
f = 40 to 550 MHz
f = 40 to 550 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 550 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 550 MHz
f = 50 MHz
20
19
18
20
19
18
+135
−
−
−
s22
output return losses
−
−
−
s21
phase response
+225
−65
CTB
composite triple beat
77 channels flat;
Vo = 44 dBmV;
measured at 547.25 MHz
Xmod
CSO
cross modulation
77 channels flat;
Vo = 44 dBmV;
measured at 55.25 MHz
−
−
−
−
−68
−62
dB
dB
composite second order distortion 77 channels flat;
Vo = 44 dBmV;
measured at 548.5 MHz
d2
second order distortion
output voltage
note 1
−
−
−
−
−72
−
dB
Vo
NF
Itot
dim = −60 dB; note 2
f = 550 MHz
note 3
64
−
dBmV
dB
noise figure
8
total current consumption (DC)
−
415
435
mA
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV; fq = 493.25 MHz; Vq = 44 dBmV; measured at fp + fq = 548.5 MHz.
2. Measured according to DIN45004B: fp = 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo −6 dB;
fr = 549.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 538.25 MHz.
3. The module normally operates at VB = 24 V, but are able to withstand supply transients up to VB = 30 V.
2001 Nov 15
3
Philips Semiconductors
Productspecification
550 MHz, 18.5 dB gain power doubler amplifier
BGD502
Table 2 Bandwidth 40 to 450 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω.
SYMBOL
Gp
PARAMETER
power gain
CONDITIONS
f = 50 MHz
MIN.
18
TYP.
MAX.
19
UNIT
dB
−
−
−
−
−
−
−
−
−
−
−
−
f = 450 MHz
18.6
0.2
−
20.6
1.8
±0.3
−
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
SL
FL
s11
slope cable equivalent
flatness of frequency response
input return losses
f = 40 to 450 MHz
f = 40 to 450 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 450 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 450 MHz
f = 50 MHz
20
19
18
20
19
18
+135
−
−
−
s22
output return losses
−
−
−
s21
phase response
+225
−67
CTB
composite triple beat
60 channels flat;
Vo = 46 dBmV;
measured at 445.25 MHz
CSO
Xmod
composite second order distortion 60 channels flat;
Vo = 46 dBmV;
−
−
−
−
−60
−67
dB
dB
measured at 446.5 MHz
cross modulation
60 channels flat;
Vo = 46 dBmV;
measured at 55.25 MHz
d2
second order distortion
output voltage
note 1
−
−
−
−
−75
−
dB
Vo
NF
Itot
dim = −60 dB; note 2
f = 450 MHz
note 3
67
−
dBmV
dB
noise figure
7
total current consumption (DC)
−
415
435
mA
Notes
1. fp = 55.25 MHz; Vp = 46 dBmV; fq = 391.25 MHz; Vq = 46 dBmV; measured at fp + fq = 446.5 MHz.
2. Measured according to DIN45004B: fp = 440.25 MHz; Vp = Vo; fq = 447.25 MHz; Vq = Vo −6 dB;
fr = 449.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 438.25 MHz.
3. The modules normally operate at VB = 24 V, but are able to withstand supply transients up to VB = 30 V.
2001 Nov 15
4
Philips Semiconductors
Productspecification
550 MHz, 18.5 dB gain power doubler amplifier
BGD502
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
E
Z
p
A
2
1
2
3
5
7
8
9
A
L
F
S
W
e
b
M
w
y
c
e
1
d
q
y
M
B
2
U
Q
2
B
q
M
B
1
y
M
B
p
U
q
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
U
A
d
max.
A
max.
D
max.
E
max.
L
min.
Q
max.
Z
max.
1
2
UNIT
e
e
p
q
W
w
y
b
c
F
q
q
S
U
1
1
2
2
max.
max.
4.15
3.85
0.51
0.38
6-32
UNC
mm 20.8 9.1
0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8
2.4 38.1 25.4 10.2 4.2 44.75
8
0.25 0.1 3.8
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
99-02-06
SOT115J
2001 Nov 15
5
Philips Semiconductors
Productspecification
550 MHz, 18.5 dB gain power doubler amplifier
BGD502
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2001 Nov 15
6
Philips Semiconductors
Productspecification
550 MHz, 18.5 dB gain power doubler amplifier
BGD502
NOTES
2001 Nov 15
7
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613518/04/pp8
Date of release: 2001 Nov 15
Document order number: 9397 750 08825
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