BGD702,112 [NXP]
BGD702 - 750 MHz, 18.5 dB gain power doubler amplifier SFM 7-Pin;
| 型号： | BGD702,112 |
| 厂家： | 
NXP |
| 描述： | BGD702 - 750 MHz, 18.5 dB gain power doubler amplifier SFM 7-Pin 高功率电源 射频 微波 |
| 文件： | 总10页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BGD702
750 MHz, 18.5 dB gain
power doubler amplifier
Product specification
2001 Nov 27
Supersedes data of 2001 Nov 02
NXP Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler
amplifier
BGD702
FEATURES
PINNING - SOT115J
Excellent linearity
PIN
DESCRIPTION
Extremely low noise
1
2, 3
5
input
Silicon nitride passivation
Rugged construction
common
+VB
Gold metallization ensures excellent reliability.
7, 8
9
common
output
APPLICATIONS
CATV systems operating in the 40 to 750 MHz
frequency range.
handbook, halfpage
2
8
1
3
5
7
9
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
at a supply voltage of 24 V (DC).
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
power gain
CONDITIONS
MIN.
18
MAX.
UNIT
dB
Gp
Itot
f = 50 MHz
f = 750 MHz
total current consumption (DC) VB = 24 V
19
18.5
dB
435
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER
MIN.
MAX.
UNIT
Vi
RF input voltage
65
dBmV
C
Tstg
Tmb
storage temperature
40
20
+100
+100
operating mounting base temperature
C
2001 Nov 27
2
NXP Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler
amplifier
BGD702
CHARACTERISTICS
Table 1 Bandwidth 40 to 750 MHz; VB = 24 V; Tmb = 35 C; ZS = ZL = 75
SYMBOL
PARAMETER
power gain
CONDITIONS
f = 50 MHz
MIN.
18
TYP.
18.5
MAX.
19
UNIT
dB
Gp
f = 750 MHz
18.5
0.2
19.7
1.3
0.2
27
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
SL
FL
s11
slope cable equivalent
flatness of frequency response
input return losses
f = 40 to 750 MHz
f = 40 to 750 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 750 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 640 MHz
f = 640 to 750 MHz
f = 50 MHz
2
0.5
20
19
18
17
16
20
19
18
17
16
45
30
29
22
21
s22
output return losses
23
24
23
21
21
s21
phase response
+45
58
CTB
composite triple beat
110 channels flat; Vo = 44 dBmV;
measured at 745.25 MHz
59
Xmod
CSO
cross modulation
110 channels flat; Vo = 44 dBmV;
measured at 55.25 MHz
64
63
62
58
dB
dB
composite second order distortion 110 channels flat; Vo = 44 dBmV;
measured at 746.5 MHz
d2
second order distortion
output voltage
note 1
78
64
4.5
68
dB
Vo
NF
dim = 60 dB; note 2
f = 50 MHz
f = 450 MHz
f = 550 MHz
f = 600 MHz
f = 750 MHz
note 3
61
dBmV
dB
noise figure
5.5
6.5
6.5
7
dB
dB
dB
6.5
425
8.5
435
dB
Itot
total current consumption (DC)
mA
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 691.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 746.5 MHz.
2. Measured according to DIN45004B:
fp = 740.25 MHz; Vp = Vo;
fq = 747.25 MHz; Vq = Vo 6 dB;
fr = 749.25 MHz; Vr = Vo 6 dB;
measured at fp + fq fr = 738.25 MHz.
3. The modules normally operate at VB = 24 V, but are able to withstand supply transients up to VB = 30 V.
2001 Nov 27
3
NXP Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler
amplifier
BGD702
Table 2 Bandwidth 40 to 600 MHz; VB = 24 V; Tmb = 35 C; ZS = ZL = 75
SYMBOL
PARAMETER
power gain
CONDITIONS
f = 50 MHz
MIN.
18
TYP.
18.5
MAX.
19
UNIT
dB
Gp
f = 600 MHz
18.5
0.2
19.4
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
SL
FL
s11
slope cable equivalent
flatness of frequency response
input return losses
f = 40 to 600 MHz
f = 40 to 600 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 600 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 600 MHz
f = 50 MHz
2
0.3
20
19
18
17
20
19
18
17
45
27
30
29
22
23
24
23
21
s22
output return losses
s21
phase response
+45
65
CTB
composite triple beat
85 channels flat; Vo = 44 dBmV;
measured at 595.25 MHz
66
Xmod
CSO
cross modulation
85 channels flat; Vo = 44 dBmV;
measured at 55.25 MHz
66
68
65
60
dB
dB
composite second order distortion 85 channels flat; Vo = 44 dBmV;
measured at 596.5 MHz
d2
second order distortion
output voltage
note 1
80
67
70
dB
Vo
NF
Itot
dim = 60 dB; note 2
see Table 1
note 3
64
dBmV
dB
noise figure
total current consumption (DC)
425
435
mA
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 541.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 596.5 MHz.
2. Measured according to DIN45004B:
fp = 590.25 MHz; Vp = Vo;
fq = 597.25 MHz; Vq = Vo 6 dB;
fr = 599.25 MHz; Vr = Vo 6 dB;
measured at fp + fq fr = 588.25 MHz.
3. The modules normally operate at VB = 24 V, but are able to withstand supply transients up to VB = 30 V.
2001 Nov 27
4
NXP Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler
amplifier
BGD702
Table 3 Bandwidth 40 to 550 MHz; VB = 24 V; Tmb = 35 C; ZS = ZL = 75
SYMBOL
PARAMETER
power gain
CONDITIONS
f = 50 MHz
MIN.
18
TYP.
18.5
MAX.
19
UNIT
dB
Gp
f = 550 MHz
18.5
0.2
19.3
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
SL
FL
s11
slope cable equivalent
flatness of frequency response
input return losses
f = 40 to 550 MHz
f = 40 to 550 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 50 MHz
2
0.3
20
19
18
17
20
19
18
17
45
27
30
29
22
23
24
23
21
s22
output return losses
s21
phase response
+45
67
CTB
composite triple beat
77 channels flat; Vo = 44 dBmV;
measured at 547.25 MHz
68
Xmod
CSO
cross modulation
77 channels flat; Vo = 44 dBmV;
measured at 55.25 MHz
68
68
67
62
dB
dB
composite second order distortion 77 channels flat; Vo = 44 dBmV;
measured at 548.5 MHz
d2
second order distortion
output voltage
note 1
81
68
72
dB
Vo
NF
Itot
dim = 60 dB; note 2
see Table 1
note 3
64.5
dBmV
dB
noise figure
total current consumption (DC)
425
435
mA
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 493.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 548.5 MHz.
2. Measured according to DIN45004B:
fp = 540.25 MHz; Vp = Vo;
fq = 547.25 MHz; Vq = Vo 6 dB;
fr = 549.25 MHz; Vr = Vo 6 dB;
measured at fp + fq fr = 538.25 MHz.
3. The modules normally operate at VB = 24 V, but are able to withstand supply transients up to VB = 30 V.
2001 Nov 27
5
NXP Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler
amplifier
BGD702
Table 4 Bandwidth 40 to 450 MHz; VB = 24 V; Tmb = 35 C; ZS = ZL = 75
SYMBOL
PARAMETER
power gain
CONDITIONS
f = 50 MHz
MIN.
18
TYP.
18.5
MAX.
19
UNIT
dB
Gp
f = 450 MHz
18.5
0.2
19.2
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
SL
FL
s11
slope cable equivalent
flatness of frequency response
input return losses
f = 40 to 450 MHz
f = 40 to 450 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 450 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 450 MHz
f = 50 MHz
2
0.3
20
19
18
17
20
19
18
17
45
27
30
29
22
23
24
23
21
s22
output return losses
s21
phase response
+45
68
CTB
composite triple beat
60 channels flat; Vo = 46 dBmV;
measured at 445.25 MHz
Xmod
CSO
cross modulation
60 channels flat; Vo = 46 dBmV;
measured at 55.25 MHz
65
65
dB
dB
composite second order distortion 60 channels flat; Vo = 46 dBmV
measured at 446.5 MHz
d2
second order distortion
output voltage
note 1
75
dB
Vo
NF
Itot
dim = 60 dB; note 2
see Table 1
note 3
67
dBmV
dB
noise figure
total current consumption (DC)
425
435
mA
Notes
1. fp = 55.25 MHz; Vp = 46 dBmV;
fq = 391.25 MHz; Vq = 46 dBmV;
measured at fp + fq = 446.5 MHz.
2. Measured according to DIN45004B:
fp = 440.25 MHz; Vp = Vo;
fq = 447.25 MHz; Vq = Vo 6 dB;
fr = 449.25 MHz; Vr = Vo 6 dB;
measured at fp + fq fr = 438.25 MHz.
3. The modules normally operate at VB = 24 V, but are able to withstand supply transients up to VB = 30 V.
2001 Nov 27
6
NXP Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler
amplifier
BGD702
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
E
Z
p
A
2
1
2
3
5
7
8
9
A
L
F
S
W
e
b
M
w
x
c
e
1
d
q
y
M
B
2
U
Q
2
B
q
M
B
1
y
M
B
p
U
q
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
A
A
max.
D
max.
E
max.
L
min.
Q
max.
Z
max.
2
UNIT
e
e
p
q
W
w
x
y
b
c
d
F
q
q
S
U
U
2
1
1
2
1
max.
4.15
3.85
0.51
0.38
2.04
2.54
44.75 8.2 6-32
44.25 7.8 UNC
mm 20.8 9.5
0.25 27.2
13.75 2.54 5.08 12.7 8.8
2.4 38.1 25.4 10.2 4.2
0.25 0.7 0.1 3.8
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEITA
04-02-04
10-06-18
SOT115J
2001 Nov 27
7
NXP Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler
amplifier
BGD702
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Limited warranty and liability Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
information.
Applications Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
In no event shall NXP Semiconductors be liable for any
indirect, incidental, punitive, special or consequential
damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the
removal or replacement of any products or rework
charges) whether or not such damages are based on tort
(including negligence), warranty, breach of contract or any
other legal theory.
Customers are responsible for the design and operation of
their applications and products using NXP
Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole
responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as
for the planned application and use of customer’s third
party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks
associated with their applications and products.
Notwithstanding any damages that customer might incur
for any reason whatsoever, NXP Semiconductors’
aggregate and cumulative liability towards customer for
the products described herein shall be limited in
accordance with the Terms and conditions of commercial
sale of NXP Semiconductors.
NXP Semiconductors does not accept any liability related
to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications
or products, or the application or use by customer’s third
party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and
products using NXP Semiconductors products in order to
avoid a default of the applications and the products or of
the application or use by customer’s third party
customer(s). NXP does not accept any liability in this
respect.
Right to make changes NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
2001 Nov 27
8
NXP Semiconductors
Product specification
750 MHz, 18.5 dB gain power doubler
amplifier
BGD702
Limiting values Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
Quick reference data The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
Terms and conditions of commercial sale NXP
Semiconductors products are sold subject to the general
terms and conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an
individual agreement is concluded only the terms and
conditions of the respective agreement shall apply. NXP
Semiconductors hereby expressly objects to applying the
customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
specifications and standards, customer (a) shall use the
product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and
specifications, and (b) whenever customer uses the
product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at
customer’s own risk, and (c) customer fully indemnifies
NXP Semiconductors for any liability, damages or failed
product claims resulting from customer design and use of
the product for automotive applications beyond NXP
Semiconductors’ standard warranty and NXP
No offer to sell or license Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Semiconductors’ product specifications.
Export control This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
2001 Nov 27
9
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2010
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613518/07/pp10
Date of release: 2001 Nov 27
Document order number: 9397 750 09068
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