BGD704/07,112 [NXP]
BGD704;型号: | BGD704/07,112 |
厂家: | NXP |
描述: | BGD704 |
文件: | 总10页 (文件大小:92K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BGD704
750 MHz, 20 dB gain power doubler amplifier
Rev. 8 — 28 September 2010
Product data sheet
1. Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package operating with a voltage supply of
24 V (DC).
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Excellent linearity
Extremely low noise
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability
1.3 Applications
CATV systems in the frequency range of 40 MHz to 750 MHz
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
f = 50 MHz
f = 750 MHz
VB = 24 V
Min
Typ
Max Unit
Gp
Itot
power gain
19.5 20
20.5 dB
20
-
21
-
dB
total current consumption (DC)
425
435
mA
BGD704
NXP Semiconductors
750 MHz, 20 dB gain power doubler amplifier
2. Pinning information
Table 2.
Pinning
Pin
1
Description
input
Simplified outline
Graphic symbol
5
2
common
common
+VB
1 3 5 7 9
1
9
3
5
2
3
7
8
7
common
common
output
sym095
8
9
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
BGD704
rectangular single-ended package; aluminium flange; SOT115J
2 vertical mounting holes; 2 × 6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions
Min
-
Max
Unit
Vi
RF input voltage
65
dBmV
Tstg
Tmb
storage temperature
−40
−20
+100 °C
+100 °C
mounting base operating temperature
5. Characteristics
Table 5.
Characteristics
Bandwidth 40 MHz to 750 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω.
Symbol Parameter
Conditions
Min Typ Max Unit
19.5 20 20.5 dB
Gp
power gain
f = 50 MHz
f = 750 MHz
20
0
21
1
-
dB
dB
SL
FL
s11
slope cable equivalent
flatness of frequency response
input return losses
f = 40 MHz to 750 MHz
f = 40 MHz to 750 MHz
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 750 MHz
2
-
±0.2 ±0.5 dB
20
19
18
17
16
31
29
25
21
21
-
-
-
-
-
dB
dB
dB
dB
dB
BGD704
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 8 — 28 September 2010
2 of 10
BGD704
NXP Semiconductors
750 MHz, 20 dB gain power doubler amplifier
Table 5.
Characteristics …continued
Bandwidth 40 MHz to 750 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω.
Symbol Parameter
Conditions
Min Typ Max Unit
s22
output return losses
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 750 MHz
f = 50 MHz
20
19
18
17
16
−45
-
26
27
26
24
23
-
-
-
-
-
-
dB
dB
dB
dB
dB
s21
phase response
+45 deg
CTB
composite triple beat
110 channels flat; Vo = 44 dBmV;
measured at 745.25 MHz
−58
−57
−61
−56
dB
dB
dB
Xmod
CSO
cross modulation
110 channels flat; Vo = 44 dBmV;
measured at 55.25 MHz
-
-
-
−63
−61
−75
composite second order distortion 110 channels flat; Vo = 44 dBmV;
measured at 746.5 MHz
[1]
[2]
d2
Vo
F
second order distortion
−66
-
dB
output voltage
noise figure
dim = −60 dB
f = 50 MHz
60.5 63.5
dBmV
dB
-
-
-
-
-
-
4.5
-
5
f = 450 MHz
f = 550 MHz
f = 600 MHz
f = 750 MHz
6.5
7
dB
-
dB
-
7
dB
6.5
425
8.5
435
dB
[3]
Itot
total current consumption (DC)
mA
[1] fp = 55.25 MHz; Vp = 44 dBmV; fq = 691.25 MHz; Vq = 44 dBmV; measured at fp + fq = 746.5 MHz.
[2] Measure according to DIN45004B; fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo − 6 dB; fr = 749.25 MHz; Vr = Vo − 6 dB;
measured at fp + fq − fr = 738.25 MHz.
[3] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
Table 6.
Characteristics
Bandwidth 40 MHz to 600 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω.
Symbol Parameter
Conditions
Min Typ Max Unit
19.5 20 20.5 dB
Gp
power gain
f = 50 MHz
f = 600 MHz
20
0
20.7
-
dB
dB
SL
FL
s11
slope cable equivalent
f = 40 MHz to 600 MHz
-
2
flatness of frequency response f = 40 MHz to 600 MHz
-
-
±0.3 dB
input return losses
output return losses
phase response
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 600 MHz
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 600 MHz
f = 50 MHz
20
19
18
17
20
19
18
17
−45
31
29
25
21
26
27
26
24
-
-
-
-
-
-
-
-
-
dB
dB
dB
dB
dB
dB
dB
dB
s22
s21
+45 deg
BGD704
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 8 — 28 September 2010
3 of 10
BGD704
NXP Semiconductors
750 MHz, 20 dB gain power doubler amplifier
Table 6.
Characteristics …continued
Bandwidth 40 MHz to 600 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω.
Symbol Parameter
Conditions
Min Typ Max Unit
CTB
Xmod
CSO
composite triple beat
85 channels flat; Vo = 44 dBmV; measured at
595.25 MHz
-
-
-
−65
−65
−66
−64 dB
−64 dB
−58 dB
−68 dB
cross modulation
85 channels flat; Vo = 44 dBmV; measured at
55.25 MHz
composite second order
distortion
85 channels flat; Vo = 44 dBmV; measured at
596.5 MHz
[1]
[2]
d2
Vo
F
second order distortion
output voltage
-
-
dim = −60 dB
63
-
-
-
-
dBmV
dBmV
noise figure
see Table 5
-
[3]
Itot
total current consumption (DC)
-
425
435 mA
[1] fp = 55.25 MHz; Vp = 44 dBmV; fq = 541.25 MHz; Vq = 44 dBmV; measured at fp + fq = 596.5 MHz.
[2] Measured according to DIN45004B; fp = 590.25 MHz; Vp = Vo; fq = 597.25 MHz; Vq = Vo − 6 dB; fr = 599.25 MHz; Vr = Vo − 6 dB;
measured at fp + fq − fr = 588.25 MHz.
[3] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
Table 7.
Characteristics
Bandwidth 40 MHz to 550 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω.
Symbol Parameter
Conditions
Min Typ Max Unit
19.5 20 20.5 dB
Gp
power gain
f = 50 MHz
f = 550 MHz
20
0
20.6
-
dB
dB
SL
FL
s11
slope cable equivalent
f = 40 MHz to 550 MHz
-
2
flatness of frequency response f = 40 MHz to 550 MHz
-
-
±0.3 dB
input return losses
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 550 MHz
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 550 MHz
f = 50 MHz
20
19
18
17
20
19
18
17
−45
-
31
29
25
21
26
27
26
24
-
-
-
-
-
-
-
-
-
dB
dB
dB
dB
dB
dB
dB
dB
s22
output return losses
s21
phase response
+45 deg
CTB
composite triple beat
77 channels flat; Vo = 44 dBmV; measured at
547.25 MHz
−67
−66 dB
Xmod
CSO
cross modulation
77 channels flat; Vo = 44 dBmV; measured at
55.25 MHz
-
-
−67
−67
−66 dB
−60 dB
−70 dB
composite second order
distortion
77 channels flat; Vo = 44 dBmV; measured at
548.5 MHz
[1]
[2]
d2
Vo
F
second order distortion
output voltage
-
-
dim = −60 dB
63.5
-
-
-
dBmV
dB
noise figure
see Table 5
-
-
-
[3]
Itot
total current consumption (DC)
425
435 mA
[1] fp = 55.25 MHz; Vp = 44 dBmV; fq = 493.25 MHz; Vq = 44 dBmV; measured at fp + fq = 548.5 MHz.
BGD704
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 8 — 28 September 2010
4 of 10
BGD704
NXP Semiconductors
750 MHz, 20 dB gain power doubler amplifier
[2] Measure according to DIN45004B; fp = 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo − 6 dB; fr = 549.25 MHz; Vr = Vo − 6 dB;
measured at fp + fq − fr = 538.25 MHz.
[3] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
Table 8.
Characteristics
Bandwidth 40 MHz to 450 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω.
Symbol Parameter
Conditions
Min Typ Max Unit
19.5 20 20.5 dB
Gp
power gain
f = 50 MHz
f = 450 MHz
20
0
20.6
-
dB
dB
SL
FL
s11
slope cable equivalent
f = 40 MHz to 450 MHz
-
2
flatness of frequency response f = 40 MHz to 450 MHz
-
-
±0.3 dB
input return losses
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 450 MHz
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 450 MHz
f = 50 MHz
20
19
18
17
20
19
18
17
−45
-
31
29
25
21
26
27
26
24
-
-
-
-
-
-
-
-
-
dB
dB
dB
dB
dB
dB
dB
dB
s22
output return losses
s21
phase response
+45 deg
CTB
composite triple beat
60 channels flat; Vo = 46 dBmV; measured at
445.25 MHz
-
−67 dB
Xmod
CSO
cross modulation
60 channels flat; Vo = 46 dBmV; measured at
55.25 MHz
-
-
-
-
−64 dB
−63 dB
−73 dB
composite second order
distortion
60 channels flat; Vo = 46 dBmV; measured at
446.5 MHz
[1]
[2]
d2
Vo
F
second order distortion
output voltage
-
-
dim = −60 dB
66
-
-
-
-
dBmV
dB
noise figure
see Table 5
-
[3]
Itot
total current consumption (DC)
-
425
435 mA
[1] fp = 55.25 MHz; Vp = 44 dBmV; fq = 391.25 MHz; Vq = 46 dBmV; measured at fp + fq = 446.5 MHz.
[2] Measured according to DIN45004B; fp = 440.25 MHz; Vp = Vo; fq = 447.25 MHz; Vq = Vo − 6 dB; fr = 449.25 MHz; Vr = Vo − 6 dB;
measured at fp + fq − fr = 438.25 MHz.
[3] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
BGD704
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 8 — 28 September 2010
5 of 10
BGD704
NXP Semiconductors
750 MHz, 20 dB gain power doubler amplifier
6. Package outline
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
E
Z
p
A
2
1
2
3
5
7
8
9
A
L
F
S
W
e
b
M
w
x
c
e
1
d
q
y
M
B
2
1
U
Q
2
B
q
M
B
y
M
B
p
U
q
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
A
A
max.
D
max.
E
max.
L
min.
Q
max.
Z
y
2
UNIT
e
e
p
q
W
w
x
b
c
d
F
q
q
S
U
U
2
1
1
2
1
max.
max.
4.15
3.85
0.51
0.38
2.04
2.54
44.75 8.2 6-32
44.25 7.8 UNC
mm 20.8 9.5
0.25 27.2
13.75 2.54 5.08 12.7 8.8
2.4 38.1 25.4 10.2 4.2
0.25 0.7 0.1 3.8
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEITA
04-02-04
10-06-18
SOT115J
Fig 1. Package outline SOT115J
BGD704
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 8 — 28 September 2010
6 of 10
BGD704
NXP Semiconductors
750 MHz, 20 dB gain power doubler amplifier
7. Revision history
Table 9.
Revision history
Document ID
BGD704 v.8
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20100928
Product data sheet
-
BGD704 v.7
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Package outline drawings have been updated to the latest version.
BGD704 v.7
(9397 750 14776)
20050401
20011102
20011029
19990322
19970402
19961220
Product data sheet
Product specification
Product specification
Product specification
Product specification
Product specification
-
-
-
-
-
-
BGD704 v.6
BGD704 v.5
BGD704 v.4
BGD704 v.3
BGD704 v.2
-
BGD704 v.6
(9397 750 09027)
BGD704 v.5
(9397 750 08846)
BGD704 v.4
(9397 750 05295)
BGD704 v.3
(9397 750 01971)
BGD704 v.2
(9397 750 01392)
BGD704
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 8 — 28 September 2010
7 of 10
BGD704
NXP Semiconductors
750 MHz, 20 dB gain power doubler amplifier
8. Legal information
8.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
8.2
Definitions
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
8.3
Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
BGD704
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 8 — 28 September 2010
8 of 10
BGD704
NXP Semiconductors
750 MHz, 20 dB gain power doubler amplifier
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
8.4
Trademarks
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
9. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BGD704
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 8 — 28 September 2010
9 of 10
BGD704
NXP Semiconductors
750 MHz, 20 dB gain power doubler amplifier
10. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
7
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 7
8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 8
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 8
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
8.1
8.2
8.3
8.4
9
Contact information. . . . . . . . . . . . . . . . . . . . . . 9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
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Date of release: 28 September 2010
Document identifier: BGD704
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