BGD812_01 [NXP]
860 MHz, 18.5 dB gain power doubler amplifier; 860 MHz的18.5 dB增益功率倍增放大器器
| 型号： | BGD812_01 |
| 厂家： | 
NXP |
| 描述： | 860 MHz, 18.5 dB gain power doubler amplifier |
| 文件： | 总12页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
BGD812
860 MHz, 18.5 dB gain power
doubler amplifier
Product specification
2001 Oct 30
Supersedes data of 2001 Sep 07
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler
amplifier
BGD812
FEATURES
PINNING - SOT115J
• Excellent linearity
PIN
DESCRIPTION
• Extremely low noise
1
2, 3
5
input
• Excellent return loss properties
• Silicon nitride passivation
• Rugged construction
common
+VB
7, 8
9
common
output
• Gold metallization ensures excellent reliability.
APPLICATIONS
handbook, halfpage
• CATV systems operating in the 40 to 870 MHz
2
8
frequency range.
1
3
5
7
9
DESCRIPTION
Side view
MSA319
Hybrid amplifier module in a SOT115J package operating
with a voltage supply of 24 V (DC).
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
Gp
PARAMETER
CONDITIONS
f = 45 MHz
MIN.
18.2
MAX.
UNIT
dB
power gain
18.8
20
f = 870 MHz
VB = 24 V
19
dB
Itot
total current consumption (DC)
380
410
mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER
VB
MIN.
MAX.
UNIT
supply voltage
−
30
V
Vi
RF input voltage
storage temperature
−
70
dBmV
°C
Tstg
Tmb
−40
−20
+100
+100
operating mounting base temperature
°C
2001 Oct 30
2
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler
amplifier
BGD812
CHARACTERISTICS
Bandwidth 40 to 870 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω
SYMBOL
PARAMETER
power gain
CONDITIONS
MIN.
TYP. MAX. UNIT
Gp
f = 45 MHz
18.2
19
0.4
−
−
−
0.9
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
18.8
20
dB
dB
dB
f = 870 MHz
SL
FL
slope straight line
f = 45 to 870 MHz; note 1
f = 45 to 100 MHz
1.4
flatness straight line
±0.25 dB
f = 100 to 800 MHz
−
±0.5
+0.1
−
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
f = 800 to 870 MHz
−0.3
25
23
20
18
18
17
17
13
23
22
18
18
16
15
15
14
−45
−
s11
input return losses
f = 45 to 80 MHz
f = 80 to 160 MHz
−
f = 160 to 320 MHz
−
f = 320 to 550 MHz
−
f = 550 to 650 MHz
−
f = 650 to 750 MHz
−
f = 750 to 870 MHz
−
f = 870 to 914 MHz
−
s22
output return losses
f = 45 to 80 MHz
−
f = 80 to 160 MHz
−
f = 160 to 320 MHz
−
f = 320 to 550 MHz
−
f = 550 to 650 MHz
−
f = 650 to 750 MHz
−
f = 750 to 870 MHz
−
f = 870 to 914 MHz
−
s21
phase response
f = 50 MHz
+45
CTB
composite triple beat
79 chs flat; Vo = 44 dBmV; fm = 547.25 MHz
112 chs flat; Vo = 44 dBmV; fm = 745.25 MHz
132 chs flat; Vo = 44 dBmV; fm = 859.25 MHz
−66.5 dB
−
−61
−57
−56
dB
dB
dB
−
112 chs; fm = 547.25 MHz;
−
Vo = 50.2 dBmV at 745 MHz; note 2
79 chs; fm = 331.25 MHz;
−
−
−66
dB
Vo = 47.3 dBmV at 547 MHz; note 3
Xmod
cross modulation
79 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
112 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
132 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
−
−
−
−
−
−
−
−
−67
−64
−62
−59
dB
dB
dB
dB
112 chs; fm = 745.25 MHz;
Vo = 50.2 dBmV at 745 MHz; note 2
79 chs; fm = 331.25 MHz;
−
−
−67
dB
Vo = 47.3 dBmV at 547 MHz; note 3
2001 Oct 30
3
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler
amplifier
BGD812
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
CSO
composite second
order distortion
79 chs flat; Vo = 44 dBmV; fm = 548.5 MHz
112 chs flat; Vo = 44 dBmV; fm = 746.5 MHz
132 chs flat; Vo = 44 dBmV; fm = 860.5 MHz
−
−
−
−
−
−67
−60
−58
−57
dB
dB
dB
dB
−
−
−
112 chs; fm = 210 MHz;
Vo = 50.2 dBmV at 745 MHz; note 2
79 chs; fm = 210 MHz;
−
−
−64
dB
Vo = 47.3 dBmV at 547 MHz; note 3
d2
second order distortion note 4
−
−
−
−
−71
−
dB
Vo
output voltage
dim = −60 dB; note 5
64
48
dBmV
dBmV
CTB compression = 1 dB; 132 chs flat;
f = 859.25 MHz
−
CSO compression = 1 dB; 132 chs flat;
f = 860.5 MHz
51
−
−
dBmV
NF
noise figure
f = 50 MHz
f = 550 MHz
f = 750 MHz
f = 870 MHz
note 6
−
−
5.5
5.5
6.5
7.5
410
dB
dB
dB
dB
mA
−
−
−
−
−
−
Itot
total current
380
395
consumption (DC)
Notes
1. Slope straight line is defined as gain at 870 MHz against gain at 45 MHz.
2. Tilt = 10.2 dB (55 to 745 MHz).
3. Tilt = 7.3 dB (55 to 547 MHz).
4. fp = 55.25 MHz; Vp = 44 dBmV; fq = 805.25 MHz; Vq = 44 dBmV; measured at fp + fq = 860.5 MHz.
5. Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo −6 dB; fr = 860.25 MHz;
Vr = Vo −6 dB; measured at fp + fq − fr = 849.25 MHz.
6. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 35 V.
2001 Oct 30
4
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler
amplifier
BGD812
MLD351
MLD352
−50
52
−40
52
handbook, halfpage
handbook, halfpage
(1)
(1)
X
V
o
(dBmV)
V
CTB
(dB)
mod
(dB)
o
(dBmV)
−60
−70
−80
48
−50
48
44
40
36
−60
−70
44
(2)
(2)
(3)
40
(3)
(4)
(4)
36
1000
f (MHz)
−90
−80
0
200
400
600
800
1000
0
200
400
600
800
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
ZS = ZL = 75 Ω; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(3) Typ.
(1) Vo.
(3) Typ.
(2) Typ. +3 σ.
(4) Typ. −3 σ.
(2) Typ. +3 σ.
(4) Typ. −3 σ.
Fig.2 Composite triple beat as a function of
frequency under tilted conditions.
Fig.3 Cross modulation as a function of frequency
under tilted conditions.
MLD353
−50
52
handbook, halfpage
(1)
V
CSO
o
(dB)
(dBmV)
−60
48
(2)
−70
44
40
36
(3)
−80
(4)
−90
0
200
400
600
800
1000
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(3) Typ.
(2) Typ. +3 σ.
(4) Typ. −3 σ.
Fig.4 Composite second order distortion as a
function of frequency under tilted
conditions.
2001 Oct 30
5
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler
amplifier
BGD812
MLD354
MLD355
−40
52
−40
52
handbook, halfpage
handbook, halfpage
(1)
(1)
X
V
o
(dBmV)
V
mod
(dB)
CTB
(dB)
o
(dBmV)
−50
−60
−70
48
−50
48
(2)
44
(2)
(3)
(4)
44
40
36
−60
−70
(3)
(4)
40
36
1000
−80
−80
0
200
400
600
800
1000
0
200
400
600
800
f (MHz)
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
ZS = ZL = 75 Ω; VB = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) Vo.
(3) Typ.
(1) Vo.
(3) Typ.
(2) Typ. +3 σ.
(4) Typ. −3 σ.
(2) Typ. +3 σ.
(4) Typ. −3 σ.
Fig.5 Composite triple beat as a function of
frequency under tilted conditions.
Fig.6 Cross modulation as a function of frequency
under tilted conditions.
MLD356
−50
52
handbook, halfpage
(1)
V
CSO
o
(dB)
(dBmV)
−60
48
(2)
−70
44
40
36
(3)
(4)
−80
−90
0
200
400
600
800
1000
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) Vo.
(3) Typ.
(2) Typ. +3 σ.
(4) Typ. −3 σ.
Fig.7 Composite second order distortion as a
function of frequency under tilted
conditions.
2001 Oct 30
6
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler
amplifier
BGD812
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
E
Z
p
A
2
1
2
3
5
7
8
9
A
L
F
S
W
e
b
M
w
y
c
e
1
d
q
y
M
B
2
U
Q
2
B
q
M
B
1
y
M
B
p
U
q
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
U
A
d
max.
A
max.
D
max.
E
max.
L
min.
Q
max.
Z
max.
1
2
UNIT
e
e
p
q
W
w
y
b
c
F
q
q
S
U
1
1
2
2
max.
max.
4.15
3.85
0.51
0.38
6-32
UNC
mm 20.8 9.1
0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8
2.4 38.1 25.4 10.2 4.2 44.75
8
0.25 0.1 3.8
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
99-02-06
SOT115J
2001 Oct 30
7
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler
amplifier
BGD812
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS(1)
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Oct 30
8
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler
amplifier
BGD812
NOTES
2001 Oct 30
9
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler
amplifier
BGD812
NOTES
2001 Oct 30
10
Philips Semiconductors
Product specification
860 MHz, 18.5 dB gain power doubler
amplifier
BGD812
NOTES
2001 Oct 30
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613518/04/pp12
Date of release: 2001 Oct 30
Document order number: 9397 750 08852
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