BGD902,112 [NXP]
RF/Microwave Amplifier, 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT-115J, 9 PIN;
| 型号： | BGD902,112 |
| 厂家： | 
NXP |
| 描述： | RF/Microwave Amplifier, 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT-115J, 9 PIN 高功率电源 放大器 射频 微波 功率放大器 |
| 文件： | 总10页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BGD902
860 MHz, 18.5 dB gain power doubler amplifier
Rev. 08 — 7 June 2007
Product data sheet
1. Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package operating with a supply voltage of 24 V.
1.2 Features
I Excellent linearity
I Extremely low noise
I Excellent return loss properties
I Silicon nitride passivation
I Rugged construction
I Gold metallization ensures excellent reliability
1.3 Applications
I CATV systems operating in the 40 MHz to 900 MHz frequency range.
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
f = 50 MHz
f = 900 MHz
Min
18.2
19
Typ
18.5
19.5
420
Max
18.8
20
Unit
dB
Gp
Itot
power gain
dB
[1]
total current consumption (DC)
405
435
mA
[1] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 35 V.
2. Pinning information
Table 2.
Pinning
Pin
1
Description
input
Simplified outline
Symbol
5
2, 3
5
common
+VB
1 3 5 7 9
1
9
7, 8
9
common
output
2
3
7
8
sym095
BGD902
NXP Semiconductors
860 MHz, 18.5 dB gain power doubler amplifier
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
BGD902
rectangular single-ended package; aluminium flange; SOT115J
2 vertical mounting holes; 2 × 6-32 UNC and 2 extra
horizontal mounting holes; 7 gold-plated in-line leads
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VB
Parameter
Conditions
Min
-
Max
30
Unit
V
supply voltage
Vi
RF input voltage
storage temperature
mounting base temperature
-
70
dBmV
°C
Tstg
−40
−20
+100
+100
Tmb
°C
5. Characteristics
Table 5.
Characteristics
Bandwidth 40 MHz to 900 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω.
Symbol Parameter
Conditions
Min
18.2
19
Typ
18.5
19.5
0.9
Max
Unit
dB
Gp
power gain
f = 50 MHz
18.8
20
f = 900 MHz
dB
SL
FL
slope cable
equivalent
f = 40 MHz to 900 MHz
0.4
1.4
dB
flatness of
frequency
response
f = 40 MHz to 900 MHz
-
±0.15 ±0.3
dB
s11
input return
losses
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 550 MHz
f = 550 MHz to 650 MHz
f = 650 MHz to 750 MHz
f = 750 MHz to 900 MHz
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 550 MHz
f = 550 MHz to 650 MHz
f = 650 MHz to 750 MHz
f = 750 MHz to 900 MHz
21
22
21
18
17
16
16
25
23
20
20
19
18
17
23
24
24
23
23
24
26
32
31
29
28
31
29
22
-
-
-
-
-
-
-
-
-
-
-
-
-
-
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
s22
output return
losses
BGD902_8
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 08 — 7 June 2007
2 of 10
BGD902
NXP Semiconductors
860 MHz, 18.5 dB gain power doubler amplifier
Table 5.
Characteristics …continued
Bandwidth 40 MHz to 900 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω.
Symbol Parameter Conditions
Min
Typ
Max
Unit
deg
dB
s21
phase response f = 50 MHz
−45
-
+45
CTB
composite triple 49 chs flat; Vo = 47 dBmV; fm = 859.25 MHz
-
−68.5 −67
−70 −68
−63.5 −62
beat
77 chs flat; Vo = 44 dBmV; fm = 547.25 MHz
-
dB
110 chs flat; Vo = 44 dBmV; fm = 745.25 MHz
129 chs flat; Vo = 44 dBmV; fm = 859.25 MHz
-
dB
-
−60
−64
−58
−62
dB
[1]
[2]
110 chs; fm = 400 MHz; Vo = 49 dBmV at 550 MHz
129 chs; fm = 650 MHz; Vo = 49.5 dBmV at 860 MHz
cross modulation 49 chs flat; Vo = 47 dBmV; fm = 55.25 MHz
77 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
-
dB
-
−58.5 −56.5 dB
Xmod
-
−66.5 −64
−69.5 −67
dB
dB
-
110 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
-
−66
−63.5 dB
129 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
-
−64.5 −62
dB
[1]
[2]
110 chs; fm = 400 MHz; Vo = 49 dBmV at 550 MHz
129 chs; fm = 860 MHz; Vo = 49.5 dBmV at 860 MHz
-
−63
−61
−65
−72
−65
−61
−67
−62
−80
−83
−84
66
−60
−58
−62
−67
−60
−58
−63
−58
−74
−77
−78
-
dB
-
dB
CSO
composite
second order
distortion
49 chs flat; Vo = 47 dBmV; fm = 860.5 MHz
77 chs flat; Vo = 44 dBmV; fm = 548.5 MHz
110 chs flat; Vo = 44 dBmV; fm = 746.5 MHz
129 chs flat; Vo = 44 dBmV; fm = 860.5 MHz
110 chs; fm = 250 MHz; Vo = 49 dBmV at 550 MHz
129 chs; fm = 250 MHz; Vo = 49.5 dBmV at 860 MHz
-
dB
-
dB
-
dB
-
dB
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
-
dB
-
dB
IMD2
Vo
second order
distortion
-
dB
-
dB
-
dB
output voltage
IMD = −60 dB
64.5
65.5
67.5
48.5
dBmV
dBmV
dBmV
dBmV
67
-
69
-
CTB compression = 1 dB; 129 chs flat;
f = 859.25 MHz
49.5
-
CSO compression = 1 dB; 129 chs flat;
f = 860.5 MHz
50
53
-
dBmV
F
noise figure
f = 50 MHz
f = 550 MHz
f = 750 MHz
f = 900 MHz
-
4.5
5
5
dB
dB
dB
dB
mA
-
5.5
6.5
8
-
5.5
6.5
420
-
[9]
Itot
total current
consumption
(DC)
405
435
[1] Tilt = 9 dB (50 MHz to 550 MHz); tilt = 3.5 dB at −6 dB offset (550 MHz to 750 MHz).
[2] Tilt = 12.5 dB (50 MHz to 860 MHz).
[3] fp = 55.25 MHz; Vp = 44 dBmV; fq = 805.25 MHz; Vq = 44 dBmV; measured at fp + fq = 860.5 MHz.
[4] fp = 55.25 MHz; Vp = 44 dBmV; fq = 691.25 MHz; Vq = 44 dBmV; measured at fp + fq = 746.5 MHz.
[5] fp = 55.25 MHz; Vp = 44 dBmV; fq = 493.25 MHz; Vq = 44 dBmV; measured at fp + fq = 548.5 MHz.
BGD902_8
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 08 — 7 June 2007
3 of 10
BGD902
NXP Semiconductors
860 MHz, 18.5 dB gain power doubler amplifier
[6] Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo −6 dB; fr = 860.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 849.25 MHz.
[7] Measured according to DIN45004B: fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo −6 dB; fr = 749.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 738.25 MHz.
[8] Measured according to DIN45004B: fp = 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo −6 dB; fr = 549.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 538.25 MHz.
[9] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 35 V.
mda981
mda980
−50
52
−50
52
V
V
CTB
(dB)
o
X
o
mod
(dBmV)
(1)
(dBmV)
(dB)
(2)
(3)
(4)
(2)
(3)
(4)
(1)
−60
48
−60
−70
−80
−90
48
(2)
(3)
(4)
(1)
(1)
−70
−80
−90
44
40
36
44
40
36
0
200
400
600
800
1000
0
200
400
600
800
1000
f (MHz)
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB
ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB
(50 MHz to 550 MHz); tilt = 3.5 dB at −6 dB offset
(50 MHz to 550 MHz); tilt = 3.5 dB at −6 dB offset
(550 MHz to 750 MHz).
(550 MHz to 750 MHz).
(1) Vo.
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
(4) Typ. −3 σ.
Fig 1. Composite triple beat as a function of
frequency under tilted conditions
Fig 2. Cross modulation as a function of frequency
under tilted conditions
BGD902_8
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 08 — 7 June 2007
4 of 10
BGD902
NXP Semiconductors
860 MHz, 18.5 dB gain power doubler amplifier
mda942
mda982
−50
52
−50
52
V
V
CTB
(dB)
o
CSO
(dB)
o
(1)
(2)
(dBmV)
(1)
(dBmV)
(2)
(1)
−60
−70
−80
−90
48
−60
48
(3)
(4)
(3)
(4)
(2)
44
40
36
−70
44
40
36
(3)
(4)
−80
−90
0
200
400
600
800
1000
0
200
400
600
800
1000
f (MHz)
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB
ZS = ZL = 75 Ω; VB = 24 V; 129 chs; tilt = 12.5 dB
(50 MHz to 550 MHz); tilt = 3.5 dB at −6 dB offset
(50 MHz to 860 MHz).
(550 MHz to 750 MHz).
(1) Vo.
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
(4) Typ. −3 σ.
Fig 3. Composite second order distortion as a
function of frequency under tilted conditions
Fig 4. Composite triple beat as a function of
frequency under tilted conditions
BGD902_8
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 08 — 7 June 2007
5 of 10
BGD902
NXP Semiconductors
860 MHz, 18.5 dB gain power doubler amplifier
mda944
mda943
−50
52
−50
52
V
V
CSO
(dB)
X
o
o
mod
(1)
(2)
(1)
(2)
(dBmV)
(dBmV)
(dB)
−60
−70
−80
−90
48
−60
48
(3)
(4)
(3)
(4)
44
40
36
−70
−80
−90
44
40
36
0
200
400
600
800
1000
0
200
400
600
800
1000
f (MHz)
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 129 chs; tilt = 12.5 dB
ZS = ZL = 75 Ω; VB = 24 V; 129 chs; tilt = 12.5 dB
(50 MHz to 860 MHz).
(50 MHz to 860 MHz).
(1) Vo.
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
(4) Typ. −3 σ.
Fig 5. Cross modulation as a function of frequency
under tilted conditions
Fig 6. Composite second order distortion as a
function of frequency under tilted conditions
mda945
mda946
−20
−20
CTB
(dB)
CSO
(dB)
−30
−40
−50
−30
−40
−50
(1)
(1)
(2)
(3)
−60
−60
(2)
(3)
−70
−70
40
45
50
55
40
45
50
55
V
(dBmV)
V
(dBmV)
o
o
ZS = ZL = 75 Ω; VB = 24 V; 129 chs;
fm = 859.25 MHz.
ZS = ZL = 75 Ω; VB = 24 V; 129 chs; fm = 860.5 MHz.
(1) Typ. +3 σ.
(1) Typ. +3 σ.
(2) Typ.
(2) Typ.
(3) Typ. −3 σ.
(3) Typ. −3 σ.
Fig 7. Composite triple beat as a function of output
voltage
Fig 8. Composite second order distortion as a
function of output voltage
BGD902_8
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 08 — 7 June 2007
6 of 10
BGD902
NXP Semiconductors
860 MHz, 18.5 dB gain power doubler amplifier
6. Package outline
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
E
Z
p
A
2
1
2
3
5
7
8
9
A
L
F
S
W
e
b
M
w
x
c
e
1
d
q
y
M
B
2
U
Q
2
B
q
M
B
1
y
M
B
p
U
q
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
A
d
max.
A
max.
D
max.
E
max.
L
min.
Q
max.
Z
y
2
UNIT
e
e
p
q
W
w
x
b
c
F
q
q
S
U
U
2
1
1
2
1
max.
max.
4.15
3.85
0.51
0.38
44.75 8.2 6-32
44.25 7.8 UNC
mm 20.8 9.1
0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8
2.4 38.1 25.4 10.2 4.2
0.25 0.7 0.1 3.8
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-02-06
04-02-04
SOT115J
Fig 9. Package outline SOT115J
BGD902_8
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 08 — 7 June 2007
7 of 10
BGD902
NXP Semiconductors
860 MHz, 18.5 dB gain power doubler amplifier
7. Revision history
Table 6.
Revision history
Document ID
BGD902_8
Release date
Data sheet status
Change notice
Supersedes
20070607
Product data sheet
BGD902_7
Modifications:
• The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Table 5 “Characteristics”: updated values of s11 and s22.
BGD902_7
20050308
20011102
19990329
Product data sheet
Product specification
Product specification
BGD902_902MI_6
BGD902_902MI_6
BGD902_902MI_5
BGD902_902MI_5
BGD902_N_3 and
BGD902MI_N_1
BGD902_N_3
BGD902_N_2
BGD902_1
19980709
19980609
19980312
19980831
Preliminary specification
Preliminary specification
Preliminary specification
Preliminary specification
BGD902_N_2
BGD902_1
-
-
BGD902MI_N_1
BGD902_8
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 08 — 7 June 2007
8 of 10
BGD902
NXP Semiconductors
860 MHz, 18.5 dB gain power doubler amplifier
8. Legal information
8.1
Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
8.2
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
8.3
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
8.4
Trademarks
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
9. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
BGD902_8
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 08 — 7 June 2007
9 of 10
BGD902
NXP Semiconductors
860 MHz, 18.5 dB gain power doubler amplifier
10. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
3
4
5
6
7
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
8.1
8.2
8.3
8.4
9
Contact information. . . . . . . . . . . . . . . . . . . . . . 9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 7 June 2007
Document identifier: BGD902_8
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