BGU8009,115 [NXP]
BGU8009 - SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass SON 6-Pin;
| 型号： | BGU8009,115 |
| 厂家： | 
NXP |
| 描述： | BGU8009 - SiGe:C Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass SON 6-Pin 全球定位系统 |
| 文件： | 总23页 (文件大小：282K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BGU8009
6
N
O
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo
and COMPASS and LTE B32
S
X
Rev. 7 — 20 July 2017
Product data sheet
1 General description
The BGU8009 is, also known as the GPS1201M, a Low-Noise Amplifier (LNA) for GNSS
receiver and LTE Band 32 down link applications, available in a small plastic 6-pin
extremely thin leadless package. The BGU8009 requires one external matching inductor
and one external decoupling capacitor.
The BGU8009 adapts itself to the changing environment resulting from co-habitation of
different radio systems in modern cellular handsets. It has been designed for low power
consumption and optimal performance when jamming signals from co-existing cellular
transmitters are present. At low jamming power levels, it delivers 18 dB gain at a noise
figure of 0.65 dB. During high jamming power levels, resulting for example from a cellular
transmit burst, it temporarily increases its bias current to improve sensitivity.
2 Features and benefits
• Covers full GNSS L1 band, from 1559 MHz to 1610 MHz and LTE band 32 from 1452
MHz to 1496 MHz
• GNSS:
– Noise figure = 0.65 dB
– Gain 18 dB
– High input 1 dB compression point of -7 dBm
– High out of band IP3i of 6 dBm
• LTE B32:
– Noise figure = 0.65 dB
– Gain 20 dB
– High input 1 dB compression point of -8.5 dBm
• Supply voltage 1.5 V to 3.1 V
• Optimized performance at low supply current of 4.2 mA
• Power-down mode current consumption < 1 μA
• Integrated temperature stabilized bias for easy design
• Requires only one input matching inductor and one supply decoupling capacitor
• Input and output DC decoupled
• ESD protection on all pins (HBM > 2 kV)
• Integrated matching for the output
• Available in a 6-pins leadless package 1.1 mm × 0.9 mm × 0.47 mm; 0.4 mm pitch:
SOT1230
• 180 GHz transit frequency - SiGe:C technology
• Moisture sensitivity level 1
NXP Semiconductors
BGU8009
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS and LTE B32
3 Applications
• Smart phones
• Feature phones
• Tablets
• Digital still cameras
• Digital video cameras
• RF front-end modules
• Complete GNSS modules
• Personal health applications
4 Quick reference data
Table 1.ꢀQuick reference data GNSS band L1
f = 1575 MHz; VCC = 2.85 V; Pi < -40 dBm; Tamb = 25 °C; input matched to 50 Ω using a 5.6 nH inductor, see Figure 34,
unless otherwise specified.
Symbol
VCC
Parameter
Conditions
Min
Typ
Max
Unit
supply voltage
supply current
1.5
-
3.1
V
ICC
VI(ENABLE) ≥ 0.8 V
• Pi < -40 dBm
• Pi = -20 dBm
Pi < -40 dBm
Pi = -20 dBm
Pi < -40 dBm
Pi < -40 dBm
2.6
4.4
9
6.5
mA
mA
dB
-
-
Gp
power gain
noise figure
16
17.8
20.0
0.65
0.70
-10
-7
20
-
-
dB
[1]
[1]
NF
-
1.2
dB
-
1.25
dB
Pi(1dB)
input power at 1 dB gain compression VCC = 1.8 V
VCC = 2.85 V
-
-
-
-
-
dBm
dBm
dBm
dBm
-12.5
[2]
[2]
IP3i
input third-order intercept point
VCC = 1.8 V
-
-
3
VCC = 2.85 V
6
[1] PCB losses are subtracted.
[2] f1 = 1713 MHz; f2 = 1851 MHz; Pi = -20 dBm per carrier.
Table 2.ꢀQuick reference data LTE B32
f = 1474 MHz; VCC = 2.8 V; Pi = -30 dBm; Tamb = 25 °C; input matched to 50 Ω using a 9.1 nH inductor, see Figure 34,
unless otherwise specified.
Symbol
VCC
Parameter
supply voltage
supply current
power gain
Conditions
Min
Typ
-
Max
Unit
V
1.5
3.1
ICC
VI(ENABLE) ≥ 0.8 V
4.4
20
mA
dB
Gp
[1]
NF
noise figure
-
-
0.65
-11
dB
Pi(1dB)
input power at 1 dB gain compression VCC = 1.8 V
-
dBm
BGU8009
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© NXP B.V. 2017. All rights reserved.
Product data sheet
Rev. 7 — 20 July 2017
2 / 23
NXP Semiconductors
BGU8009
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS and LTE B32
Symbol
Parameter
Conditions
VCC = 2.8 V
VCC = 1.8 V
VCC = 2.8 V
Min
Typ
-8.5
-7
Max
Unit
dBm
dBm
dBm
-
-
-
[2]
[2]
IP3i
input third-order intercept point
-
-
-6
[1] PCB losses are subtracted.
[2] Δf = 1 MHz; Pi = -30 dBm per carrier.
5 Ordering information
Table 3.ꢀOrdering information
Type number Package
Name
Description
Version
BGU8009
XSON6
plastic very thin small outline package; no leads; 6
terminals;body 1.1 × 0.9 × 0.47 mm
SOT1230
OM7820
OM7824
OM17066
EVB
EVB
EVB
BGU8009 evaluation board, MMIC only
BGU8009 evaluation board, front-end EVB
BGU8009 evaluation board for LTE B32
-
-
6 Marking
Table 4.ꢀMarking codes
Type number
Marking code
BGU8009
A
6.1 Marking code description
YEAR BAR CODE
TYPE CODE
MONTH BAR CODE
PIN 1 INDICATION
PRODUCT MANUFACTURER CODE
aaa-014034
Figure 1.ꢀSOT1230 marking code description example
BGU8009
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© NXP B.V. 2017. All rights reserved.
Product data sheet
Rev. 7 — 20 July 2017
3 / 23
NXP Semiconductors
BGU8009
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS and LTE B32
7 Block diagram
V
CC
2
BGU8009
6
5
ENABLE
RF_IN
BIAS/CONTROL
3
RF_OUT
1, 4
aaa-022360
Figure 2.ꢀBlock diagram
8 Pinning information
8.1 Pinning
BGU8009
GND_RF
RF_IN
4
5
6
3
2
1
RF_OUT
V
CC
ENABLE
GND
Transparent top view
aaa-022136
Figure 3.ꢀPin configuration
8.2 Pin description
Table 5.ꢀPin description
Symbol
GND
Pin
1
Description
ground
VCC
2
supply voltage
RF output
RF ground
RF input
RF_OUT
GND_RF
RF_IN
3
4
5
ENABLE
6
enable
BGU8009
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© NXP B.V. 2017. All rights reserved.
Product data sheet
Rev. 7 — 20 July 2017
4 / 23
NXP Semiconductors
BGU8009
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS and LTE B32
9 Limiting values
Table 6.ꢀLimiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Absolute Maximum Ratings are given as Limiting
Values of stress conditions during operation, that must not be exceeded under the worst probable conditions.
Symbol Parameter
Conditions
Min
-0.5
-0.5
Max
+5.0
+5.0
Unit
V
[1]
VCC
supply voltage
[1] [2]
VI(ENABLE) input voltage on pin
ENABLE
VI(ENABLE) < VCC + 0.6 V
V
[1] [2] [3]
[1] [2] [3]
VI(RF_IN)
input voltage on pin
RF_IN
DC, VI(RF_IN) < VCC + 0.6 V
DC, VI(RF_OUT) < VCC + 0.6 V
-0.5
-0.5
+5.0
+5.0
V
V
VI(RF_OUT) input voltage on pin
RF_OUT
[1]
[1]
Pi
input power
1575 MHz
1474 MHz
-
10
dBm
dBm
mW
°C
-
10
Ptot
Tstg
Tj
total power dissipation Tsp ≤ 130 °C
storage temperature
-
55
-65
+150
150
±2
junction temperature
-
-
°C
VESD
electrostatic discharge Human Body Model (HBM)
kV
voltage
according to JEDEC standard
JS-001-2010
Charged Device Model (CDM)
according to JEDEC standard
JESD22-C101C
-
±1
kV
[1] Stressed with pulses of 200 ms in duration, with application circuit as in Figure 34.
[2] Warning: due to internal ESD diode protection, the applied DC voltage shall not exceed VCC + 0.6 V and shall not exceed 5.0 V to avoid excess current.
[3] The RF input and RF output are AC coupled through internal DC blocking capacitors.
10 Recommended operating conditions
Table 7.ꢀOperating conditions
Symbol
VCC
Parameter
Conditions
Min
1.5
-40
-
Typ
Max
3.1
+85
0.3
-
Unit
V
supply voltage
-
Tamb
ambient temperature
input voltage on pin ENABLE
+25
°C
V
VI(ENABLE)
OFF state
ON state
-
-
0.8
V
11 Thermal characteristics
Table 8.ꢀThermal characteristics
Symbol Parameter
Conditions
Typ Unit
Rth(j-sp)
thermal resistance from junction to solder point
225
K/W
BGU8009
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© NXP B.V. 2017. All rights reserved.
Product data sheet
Rev. 7 — 20 July 2017
5 / 23
NXP Semiconductors
BGU8009
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS and LTE B32
12 Characteristics GNSS band L1
Table 9.ꢀCharacteristics at VCC = 1.8 V
f = 1575 MHz; VCC = 1.8 V; VI(ENABLE) >= 0.8 V; Pi < -40 dBm; Tamb = 25 °C; input matched to 50 Ω using a 5.6 nH inductor,
see Figure 34, unless otherwise specified.
Symbol
Parameter
Conditions
Min Typ Max Unit
ICC
supply current
VI(ENABLE) ≥ 0.8 V
Pi < -40 dBm
2.3 4.2 6.2 mA
Pi = -20 dBm
-
-
9
-
- mA
1 μA
20 dB
- dB
- dB
- dB
- dB
- dB
- dB
- dB
VI(ENABLE) ≤ 0.3 V
no jammer
Gp
power gain
16 17.6
- 19.8
- 20.0
Pjam = -20 dBm; fjam = 850 MHz
Pjam = -20 dBm; fjam = 1850 MHz
Pi < -40 dBm
RLin
input return loss
output return loss
-
-
-
-
-
9
11
15
15
37
Pi = -20 dBm
RLout
Pi < -40 dBm
Pi = -20 dBm
ISL
NF
isolation
[1]
[2] [1]
[2]
noise figure
Pi = -40 dBm; no jammer
-
0.65 1.2 dB
- 0.70 1.25 dB
Pi = -40 dBm; no jammer
Pjam = -20 dBm; fjam = 850 MHz
Pjam = -20 dBm; fjam = 1850 MHz
-
-
0.9
1.2
- dB
[2]
- dB
[1]
Pi(1dB)
IP3i
input power at 1 dB gain
compression
- -10
- dBm
[1] [3]
[1] [4]
input third-order intercept point
-
-
-
3
3
-
-
dBm
dBm
μs
-
ton
turn-on time
turn-off time
time from VI(ENABLE) ON to 90 % of the
gain
2
toff
time from VI(ENABLE) OFF to 10 % of
the gain
-
-
1
μs
[1] Guaranteed by device design; not tested in production.
[2] Including PCB losses.
[3] f1 = 1713 MHz; f2 = 1851 MHz, Pi = -20 dBm per carrier.
[4] f1 = 1713 MHz; f2 = 1851 MHz, Pi(1) = -20 dBm, Pi(2) = -65 dBm.
BGU8009
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© NXP B.V. 2017. All rights reserved.
Product data sheet
Rev. 7 — 20 July 2017
6 / 23
NXP Semiconductors
BGU8009
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS and LTE B32
Table 10.ꢀCharacteristics at Vcc = 2.85 V
f = 1575 MHz; VCC = 2.85 V; VI(ENABLE) >= 0.8 V; Pi < -40 dBm; Tamb = 25 °C; input matched to 50 Ω using a 5.6 nH
inductor,see Figure 34, unless otherwise specified.
Symbol
Parameter
Conditions
Min Typ Max Unit
ICC
supply current
VI(ENABLE) ≥ 0.8 V
• Pi < -40 dBm
2.6 4.4 6.5 mA
• Pi = -20 dBm
-
9
-
-
mA
μA
dB
dB
dB
dB
dB
dB
dB
dB
VI(ENABLE) ≤ 0.3 V
no jammer
-
1
Gp
power gain
16
-
17.8 20
20.0 -
20.2 -
• Pjam = -20 dBm; fjam = 850 MHz
• Pjam = -20 dBm; fjam = 1850 MHz
Pi < -40 dBm
-
RLin
input return loss
output return loss
-
9
-
-
-
-
-
Pi = -20 dBm
-
11
15
15
37
RLout
Pi < -40 dBm
-
Pi = -20 dBm
-
ISL
NF
isolation
-
[1]
[2] [1]
[2]
noise figure
Pi = -40 dBm; no jammer
-
0.65 1.2 dB
0.70 1.25 dB
Pi = -40 dBm; no jammer
-
Pjam = -20 dBm; fjam = 850 MHz
Pjam = -20 dBm; fjam = 1850 MHz
-
0.9
1.2
-
-
-
dB
[2]
-
dB
[1]
Pi(1dB)
input power at 1 dB
gain compression
-12 -7
.5
dBm
[1] [3]
[1] [4]
IP3i
input third-order intercept point
0
0
-
6
6
-
-
dBm
dBm
μs
-
ton
turn-on time
turn-off time
time from VI(ENABLE) ON to 90 % of the
gain
2
toff
time from VI(ENABLE) OFF to 10 % of
the gain
-
-
1
μs
[1] Guaranteed by device design; not tested in production.
[2] Including PCB losses.
[3] f1 = 1713 MHz; f2 = 1851 MHz, Pi = -20 dBm per carrier.
[4] f1 = 1713 MHz; f2 = 1851 MHz, Pi(1) = -20 dBm, Pi(2) = -65 dBm.
BGU8009
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© NXP B.V. 2017. All rights reserved.
Product data sheet
Rev. 7 — 20 July 2017
7 / 23
NXP Semiconductors
BGU8009
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS and LTE B32
13 Graphs GNSS band L1
aaa-006462
aaa-006463
5
5
I
I
CC
CC
(mA)
(mA)
4.5
4.5
(3)
(2)
(1)
(4)
(3)
(2)
(1)
4
4
3.5
3
3.5
3
1
1.5
2
2.5
3
CC
3.5
-55 -35 -15
5
25
45
65
T
amb
85 105
(°C)
V
(V)
Pi = -45 dBm.
(1) Tamb = -40°C
Pi = -45 dBm.
(1) VCC = 1.5 V
(2) VCC = 1.8 V
(3) VCC = 2.85 V
(4) VCC = 3.1 V
(2) Tamb = +25°C
(3) Tamb = +85°C
Figure 4.ꢀSupply current as a function of supply
voltage; typical values
Figure 5.ꢀSupply current as a function of ambient
temperature; typical values
aaa-006464
aaa-006465
20
24
G
G
p
p
(dB)
(dB)
20
16
12
8
16
12
8
(1)
(2)
(3)
(4)
(3)
(2)
(1)
4
4
0
500
0
500
1000
1500
2000
2500
f (MHz)
3000
1000
1500
2000
2500
f (MHz)
3000
Pi = -45 dBm; VCC = 1.8 V.
(1) Tamb = -40°C
Tamb = 25°C; VCC = 1.8 V.
(1) Pi = -45 dBm
(2) Tamb = +25°C
(2) Pi = -30 dBm
(3) Tamb = +85°C
(3) Pi =- 20 dBm
(4) Pi = -15 dBm
Figure 6.ꢀPower gain as a function of frequency; typical Figure 7.ꢀPower gain as a function of frequency; typical
values
values
BGU8009
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© NXP B.V. 2017. All rights reserved.
Product data sheet
Rev. 7 — 20 July 2017
8 / 23
NXP Semiconductors
BGU8009
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS and LTE B32
aaa-006466
aaa-006467
20
16
12
8
22
18
14
10
6
18
14
10
6
G
G
(dB)
I
CC
p
p
(dB)
(mA)
G
p
(4)
(3)
(2)
(1)
(4)
(3)
(2)
(1)
(1)
(2)
(3)
(4)
I
CC
4
0
500
2
1000
1500
2000
2500
f (MHz)
3000
-50
-40
-30
-20
P (dBm)
-10
i
Pi = -45 dBm; Tamb = 25°C.
(1) VCC = 1.5 V
f = 1575 MHz; Tamb= 25°C.
(1) VCC = 1.5 V
(2) VCC = 1.8 V
(2) VCC = 1.8 V
(3) VCC = 2.85 V
(4) VCC = 3.1 V
(3) VCC = 2.85 V
(4) VCC = 3.1 V
Figure 8.ꢀPower gain as a function of frequency; typical Figure 9.ꢀPower gain and supply current as function of
values
input power; typical values
aaa-006468
aaa-006469
1
1.6
NF
NF
(dB)
(dB)
0.8
1.2
0.8
0.4
0
(3)
(2)
(1)
(1)
(2)
(3)
(4)
0.6
0.4
0.2
1500
1525
1550
1575
1600
1625
f (MHz)
1650
1.4
1.8
2.2
2.6
3
CC
3.4
V
(V)
Tamb = 25°C; no jammer, including PCB losses.
(1) VCC = 1.5 V
f = 1575 MHz; no jammer, including PCB losses.
(1) Tamb = -40°C
(2) VCC = 1.8 V
(2) Tamb = +25°C
(3) VCC = 2.85 V
(3) Tamb = +85°C
(4) VCC = 3.1 V
Figure 10.ꢀNoise figure as a function of frequency;
typical values
Figure 11.ꢀNoise figure as a function of supply voltage;
typical values
BGU8009
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© NXP B.V. 2017. All rights reserved.
Product data sheet
Rev. 7 — 20 July 2017
9 / 23
NXP Semiconductors
BGU8009
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS and LTE B32
aaa-006470
aaa-006471
1.4
1.2
1
3
2.5
2
NF
(dB)
NF
(dB)
(1)
(2)
(4)
(3)
0.8
0.6
0.4
0.2
1.5
1
(1)
(2)
(3)
(4)
0.5
0
-50
-50
-25
0
25
50
75
(°C)
100
-40
-30
-20
-10
(dBm)
0
T
P
jam
amb
f = 1575 MHz; no jammer, including PCB losses.
(1) VCC = 1.5 V
fjam = 850 MHz; Tamb= 25°C; f = 1575 MHz; including PCB
losses.
(1) VCC = 1.5 V
(2) VCC = 1.8 V
(3) VCC = 2.85 V
(4) VCC = 3.1 V
(2) VCC = 1.8 V
(3) VCC = 2.85 V
(4) VCC = 3.1 V
Figure 12.ꢀNoise figure as a function of ambient
temperature; typical values
Figure 13.ꢀNoise figure as a function of jamming power;
typical values
aaa-006472
aaa-006473
3
0
NF
RL
in
(dB)
(dB)
2.5
-3
-6
2
(1)
(2)
(3)
(4)
(3)
(2)
(1)
1.5
1
-9
0.5
0
-50
-12
500
-40
-30
-20
-10
(dBm)
0
1000
1500
2000
2500
f (MHz)
3000
P
jam
fjam = 1850 MHz; Tamb= 25°C; f = 1575 MHz; including PCB Pi = -45 dBm; VCC= 1.8 V.
losses.
(1) Tamb = -40°C
(2) Tamb = +25°C
(3) Tamb = +85°C
(1) VCC = 1.5 V
(2) VCC = 1.8 V
(3) VCC = 2.85 V
(4) VCC = 3.1 V
Figure 15.ꢀInput return loss as a function of frequency;
Figure 14.ꢀNoise figure as a function of jamming power; typical values
typical values
BGU8009
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© NXP B.V. 2017. All rights reserved.
Product data sheet
Rev. 7 — 20 July 2017
10 / 23
NXP Semiconductors
BGU8009
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS and LTE B32
aaa-006474
aaa-006475
0
-2
-4
-6
-8
0
-2
-4
-6
-8
RL
RL
in
(dB)
in
(dB)
(1)
(2)
(3)
(4)
(1)
(2)
(4)
(3)
-10
-10
-12
500
-12
500
1000
1500
2000
2500
f (MHz)
3000
1000
1500
2000
2500
f (MHz)
3000
Tamb = 25°C; VCC= 1.8 V.
(1) Pi = -45 dBm
Pi = -45 dBm; Tamb= 25°C.
(1) VCC = 1.5 V
(2) Pi = -30 dBm
(2) VCC = 1.8 V
(3) Pi = -20 dBm
(3) VCC = 2.85 V
(4) VCC = 3.1 V
(4) Pi = -15 dBm
Figure 16.ꢀInput return loss as a function of frequency; Figure 17.ꢀInput return loss as a function of frequency;
typical values
typical values
aaa-006476
aaa-006477
0
0
RL
RL
out
in
(dB)
(dB)
-4
-8
-4
-8
(4)
(3)
(2)
(1)
-12
-12
(3)
(2)
(1)
-16
-20
-24
-16
-20
-50
-40
-30
-20
P (dBm)
-10
500
1000
1500
2000
2500
f (MHz)
3000
i
f = 1575 MHz; Tamb = 25°C.
(1) VCC = 1.5 V
Pi = -45 dBm; VCC = 1.8 V.
(1) Tamb = -40°C
(2) VCC = 1.8 V
(2) Tamb = +25°C
(3) VCC = 2.85 V
(4) VCC = 3.1 V
(3) Tamb = +85°C
Figure 18.ꢀInput return loss as a function of input
power; typical values
Figure 19.ꢀOutput return loss as a function of
frequency; typical values
BGU8009
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© NXP B.V. 2017. All rights reserved.
Product data sheet
Rev. 7 — 20 July 2017
11 / 23
NXP Semiconductors
BGU8009
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS and LTE B32
aaa-006478
aaa-006479
0
-4
0
-4
RL
RL
out
(dB)
out
(dB)
(4)
(3)
(2)
(1)
-8
-8
-12
-12
-16
-20
-16
-20
(4)
(3)
(2)
(1)
500
1000
1500
2000
2500
f (MHz)
3000
500
1000
1500
2000
2500
f (MHz)
3000
Tamb = 25°C; VCC = 1.8 V.
(1) Pi = -45 dBm
Pi= -45 dBm; Tamb = 25°C.
(1) VCC = 1.5 V
(2) Pi = -30 dBm
(2) VCC = 1.8 V
(3) Pi = -20 dBm
(3) VCC = 2.85 V
(4) VCC = 3.1 V
(4) Pi = -15 dBm
Figure 20.ꢀOutput return loss as a function of
frequency; typical values
Figure 21.ꢀOutput return loss as a function of
frequency; typical values
aaa-006480
aaa-006481
0
0
RL
ISL
out
(dB)
(dB)
-4
-8
-10
(1)
(2)
(3)
(4)
-20
-12
-30
(1)
(2)
(3)
-16
-20
-40
-50
-50
-40
-30
-20
P (dBm)
-10
500
1000
1500
2000
2500
f (MHz)
3000
i
f = 1575 MHz; Tamb = 25°C.
(1) VCC = 1.5 V
Pi = -45 dBm; VCC = 1.8 V.
(1) Tamb = -40°C
(2) VCC = 1.8 V
(2) Tamb = +25°C
(3) VCC = 2.85 V
(4) VCC = 3.1 V
(3) Tamb = +85°C
Figure 22.ꢀOutput return loss as a function of input
power; typical values
Figure 23.ꢀIsolation as a function of frequency; typical
values
BGU8009
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Product data sheet
Rev. 7 — 20 July 2017
12 / 23
NXP Semiconductors
BGU8009
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS and LTE B32
aaa-006482
aaa-006483
0
0
ISL
ISL
(dB)
(dB)
-10
-20
-30
-40
-50
-10
-20
-30
-40
-50
(4)
(3)
(2)
(1)
(3)
(2)
(1)
(4)
500
1000
1500
2000
2500
f (MHz)
3000
500
1000
1500
2000
2500
f (MHz)
3000
Tamb = 25°C; VCC = 1.8 V.
(1) Pi = -45 dBm
Pi = -45 dBm; Tamb = 25°C.
(1) VCC = 1.5 V
(2) Pi = -30 dBm
(2) VCC = 1.8 V
(3) Pi = -20 dBm
(3) VCC = 2.85 V
(4) VCC = 3.1 V
(4) Pi = -15 dBm
Figure 24.ꢀIsolation as a function of frequency; typical
values
Figure 25.ꢀIsolation as a function of frequency; typical
values
aaa-006484
aaa-006485
0
0
ISL
(dB)
P
i(1dB)
(dBm)
-4
-10
-8
-20
-12
-16
-20
(2)
(1)
(3)
(3)
(2)
(1)
-30
-40
(4)
-50
-40
-30
-20
P (dBm)
-10
1
1.5
2
2.5
3
3.5
V
(V)
CC
i
f = 1575 MHz; Tamb = 25°C.
(1) VCC = 1.5 V
f = 850 MHz.
(1) Tamb = -40°C
(2) VCC = 1.8 V
(2) Tamb = +25°C
(3) Tamb = +85°C
(3 )VCC = 2.85 V
(4 )VCC = 3.1 V
Figure 26.ꢀIsolation as a function of input power; typical Figure 27.ꢀInput power at 1 dB gain compression as a
values
function of supply voltage; typical values
BGU8009
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Product data sheet
Rev. 7 — 20 July 2017
13 / 23
NXP Semiconductors
BGU8009
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS and LTE B32
aaa-006486
aaa-006487
0
-4
-8
0
-4
-8
P
P
i(1dB)
(dBm)
i(1dB)
(dBm)
(3)
(2)
(1)
-12
-16
-20
-12
-16
-20
(3)
(2)
(1)
1
1.5
2
2.5
3
CC
3.5
1
1.5
2
2.5
3
3.5
V
(V)
V
(V)
CC
f = 1850 MHz.
f = 1575 MHz.
(1) Tamb = -40°C
(1) Tamb = -40°C
(2) Tamb = +25°C
(3) Tamb= +85°C
(2) Tamb = +25°C
(3) Tamb = +85°C
Figure 28.ꢀInput power at 1 dB gain compression as a
function of supply voltage; typical values
Figure 29.ꢀInput power at 1 dB gain compression as a
function of supply voltage; typical values
aaa-006488
aaa-006489
10
10
10
10
P
IMD3
(dBm)
-10
P
IMD3
(dBm)
-10
L
L
(dBm)
(dBm)
-10
-10
P
P
L
L
(1)
(2)
(3)
(4)
-30
-50
-30
-50
-70
-90
-110
-30
-50
-30
-50
-70
-90
-110
((11))
((22))
((33))
-70
-70
IMD3
IMD3
-90
-90
-110
-110
-50
-40
-30
-20
P (dBm)
-10
-50
-40
-30
-20
P (dBm)
-10
i
i
Tamb = 25°C; f = 1575 MHz; f1 = 1713 MHz; f2 = 1851 MHz; VCC = 2.85 V; f = 1575 MHz; f1 = 1713 MHz; f2 = 1851 MHz;
Pi per carrier.
Pi per carrier.
(1) VCC = 1.5 V
(2) VCC = 1.8 V
(3) VCC = 2.85 V
(4) VCC = 3.1 V
(1) Tamb = - 40°C
(2) Tamb = +25°C
(3) Tamb = +85°C
Figure 30.ꢀOutput power and third order intermodulation Figure 31.ꢀOutput power and third order intermodulation
distortion as function of input power; typical values distortion as function of input power; typical values
BGU8009
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Product data sheet
Rev. 7 — 20 July 2017
14 / 23
NXP Semiconductors
BGU8009
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS and LTE B32
aaa-006490
aaa-006491
2
2
10
10
K
K
(4)
(3)
(1)
(2)
(3)
(2)
(1)
10
10
1
1
0
2000
4000
6000
8000
f (MHz)
10000
0
2000
4000
6000
8000
f (MHz)
10000
VCC = 1.8 V; Pi = -45 dBm.
(1) Tamb = -40°C
Tamb = 25°C; Pi = -45 dBm.
(1) VCC = 1.5 V
(2) Tamb = +25°C
(2) VCC = 1.8 V
(3) Tamb = +85°C
(3) VCC = 2.85 V
(4) VCC = 3.1 V
Figure 32.ꢀRollett stability factor as a function of
frequency; typical values
Figure 33.ꢀRollett stability factor as a function of
frequency; typical values
BGU8009
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Product data sheet
Rev. 7 — 20 July 2017
15 / 23
NXP Semiconductors
BGU8009
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS and LTE B32
14 Characteristics LTE B32
Table 11.ꢀCharacteristics
1474 MHz; VCC = 1.8 V; Pi = -30 dBm; Tamb = 25 °C; input matched 50 Ω using application diagram from Table 13 and
component values as in Figure 34. Unless otherwise specified.
Symbol
Gain Mode
ICC
Parameter
Conditions
Min Typ Max Unit
supply current
power gain
VI(ENABLE) ≥ 0.8 V
-
-
-
-
-
-
4.4
mA
dB
Gp
20
-
-
-
-
-
RLin
input return loss
output return loss
isolation
17.5
23.5
36
dB
RLout
ISL
dB
dB
[1]
[2]
NF
noise figure
0.65
dBm
[2]
Pi(1dB)
IP3i
input power at 1 dB gain compression
input third-order intercept point
-
-
-11
-7
-
-
dBm
dBm
[2]
[3]
Δf = 1 MHz, Pi = -30 dBm
ton
toff
K
turn-on time
Time from VI(CTRL) ON to 90 % of
the gain
-
-
-
-
2
1
-
μs
μs
-
turn-off time
Time from VI(CTRL) OFF to 10 % of
the gain
-
Rollett stability factor
1
[1] PCB losses are subtracted.
[2] Guaranteed by device design; not tested in production.
[3] f1= 1474 MHz, f2 = 1475 MHz
Table 12.ꢀCharacteristics
1474 MHz; VCC =2.8 V; Pi = -30 dBm; Tamb = 25 °C; input matched 50 Ω using application diagram from Table 13 and
component values as in Figure 34. Unless otherwise specified.
Symbol
Gain Mode
ICC
Parameter
Conditions
Min Typ Max Unit
supply current
power gain
VI(ENABLE) ≥ 0.8 V
-
-
-
-
-
-
4.6
mA
dB
dB
dB
dB
dB
Gp
20
-
-
-
-
-
RLin
input return loss
output return loss
isolation
17.5
23.5
36
RLout
ISL
[1]
[2]
NF
noise figure
0.65
[2]
Pi(1dB)
IP3i
input power at 1 dB gain compression
input third-order intercept point
-
-8.5
-6
-
dBm
dBm
[2]
[3]
Δf = 1 MHz, Pi = - 30 dBm
BGU8009
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© NXP B.V. 2017. All rights reserved.
Product data sheet
Rev. 7 — 20 July 2017
16 / 23
NXP Semiconductors
BGU8009
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS and LTE B32
Symbol
Parameter
Conditions
Min Typ Max Unit
ton
turn-on time
Time from VI(CTRL) ON to 90 % of
the gain
-
-
-
-
2
1
-
μs
μs
-
toff
K
turn-off time
Time from VI(CTRL) OFF to 10 % of
the gain
-
Rollett stability factor
1
[1] PCB losses are subtracted.
[2] Guaranteed by device design; not tested in production.
[3] f1= 1474 MHz, f2 = 1475 MHz
15 Application information
15.1 GNSS and LTE B32 LNA
V
V
en cc
C1
6
RF
RF
out
in
L1
2
4
5
IC1
3
1
aaa-006409
For a list of components, see Table 13 (GNSS) and Table 14 (LTE B32).
Figure 34.ꢀSchematics GNSS LNA and LTE B32 evaluation board
Table 13.ꢀList of components for GNSS applications
See Figure 34 for schematics.
Component
Description
Value
Remarks
EVB
Evaluation Board
SOT1230 - EVB
EVB for GNSS application, NXP
Semiconductors
C1
IC1
L1
decoupling capacitor
BGU8009
1 nF
-
NXP Semiconductors
high-quality matching inductor
5.6 nH
GNSS band L1: 1559 < f < 1610 MHz
Murata LQW15A
BGU8009
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© NXP B.V. 2017. All rights reserved.
Product data sheet
Rev. 7 — 20 July 2017
17 / 23
NXP Semiconductors
BGU8009
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS and LTE B32
Table 14.ꢀList of components for LTE B32 applications
See Figure 34 for schematics.
Component
Description
Value
Remarks
EVB
Evaluation Board
OM17025
EVB for LTE application, NXP
Semiconductors
(SOT1230, SOT1232)
C1
IC1
L1
decoupling capacitor
BGU8009
1 nF
-
NXP Semiconductors
high-quality matching inductor
9.1 nH
LTE band 32 L1: 1452 < f < 1496 MHz
Murata LQW15A
GNSS: See application note AN11288 for details. LTE B32: See application note
AN11986.
BGU8009
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Product data sheet
Rev. 7 — 20 July 2017
18 / 23
NXP Semiconductors
BGU8009
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS and LTE B32
16 Package outline
XSON6: plastic very thin small outline package; no leads; 6 terminals; body 1.1 x 0.9 x 0.47 mm
SOT1230
shape
optional (6×)
e
A
E
B
D
3
4
e
e
1
v
A B
1
6
b
(6×)
1
pin 1
index area
pin 1
A
v
A B
L
(6×)
1
index area
y
1
y
A
C
C
shape
optional (4×)
0
1 mm
scale
Dimensions (mm are the original dimensions)
Unit
A
A
D
E
e
1
e
b
L
V
Y
Y
1
1
min 0.44
0.85 1.05
0.90 1.10 0.4 0.45 0.20 0.25 0.1 0.05 0.1
0.50 0.04 0.95 1.15 0.25 0.30
0.17 0.22
nom
max
mm
0.47
Note
1. Dimension A is including plating thickness.
sot1230_po
References
Outline
version
IEC
European
projection
Issue date
JEDEC
JEITA
13-01-02
13-01-08
SOT1230
Figure 35.ꢀPackage outline SOT1230 (XSON6)
BGU8009
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Product data sheet
Rev. 7 — 20 July 2017
19 / 23
NXP Semiconductors
BGU8009
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS and LTE B32
17 Handling information
This device is sensitive to ElectroStatic Discharge (ESD).
Observe precautions for handling electrostatic sensitive
devices. Such precautions are described in the ANSI/
ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent
standards.
msc896
Figure 36.ꢀCAUTION
18 Abbreviations
Table 15.ꢀAbbreviations
Acronym
Description
GLONASS
GNSS
GPS
Global Navigation Satellite System
Global Navigation Satellite System
Global Positioning System
Human Body Model
HBM
MMIC
PCB
Monolithic Microwave Integrated Circuit
Printed-Circuit Board
SiGe:C
Silicon Germanium Carbon
19 Revision history
Table 16.ꢀRevision history
Document ID
BGU8009 v.7
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20170720
Product data sheet
-
BGU8009 v.6
• Section 1 "General description" on page 1: added GPS1201M according to our new naming
convention
• Section 2 "Features and benefits" on page 1: added LTE B32 characteristics
• Section 14 "Characteristics LTE B32" on page 16 added
• Table 13 added EVB
BGU8009 v.6
Modifications:
BGU8009 v.5
Modifications:
BGU8009 v.4
Modifications:
BGU8009 v.3
Modifications:
BGU8009 v.2
BGU8009 v.1
20170118
Product data sheet
-
BGU8009 v.5
BGU8009 v.4
BGU8009 v.3
BGU8009 v.2
• Section 1: added GPS1201M according to our new naming convention
20160405
• updated Figure 2 "Block diagram" on page 3
20160316 Product data sheet
• updated Table 8 on page 5 and Table 9 on page 6
20141001 Product data sheet
• Section 6.1 on page 3: Section has been added.
Product data sheet
-
-
-
20130619
20130201
Product data sheet
Product data sheet
-
-
BGU8009 v.1
-
BGU8009
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© NXP B.V. 2017. All rights reserved.
Product data sheet
Rev. 7 — 20 July 2017
20 / 23
NXP Semiconductors
BGU8009
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS and LTE B32
20 Legal information
20.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary [short] data sheet
Product [short] data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple
devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
20.2 Definitions
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
Draft — The document is a draft version only. The content is still under
to result in personal injury, death or severe property or environmental
internal review and subject to formal approval, which may result in
damage. NXP Semiconductors and its suppliers accept no liability for
modifications or additions. NXP Semiconductors does not give any
inclusion and/or use of NXP Semiconductors products in such equipment or
representations or warranties as to the accuracy or completeness of
applications and therefore such inclusion and/or use is at the customer’s own
information included herein and shall have no liability for the consequences
risk.
of use of such information.
Applications — Applications that are described herein for any of these
Short data sheet — A short data sheet is an extract from a full data sheet
products are for illustrative purposes only. NXP Semiconductors makes
with the same product type number(s) and title. A short data sheet is
no representation or warranty that such applications will be suitable
intended for quick reference only and should not be relied upon to contain
for the specified use without further testing or modification. Customers
detailed and full information. For detailed and full information see the
are responsible for the design and operation of their applications and
relevant full data sheet, which is available on request via the local NXP
products using NXP Semiconductors products, and NXP Semiconductors
Semiconductors sales office. In case of any inconsistency or conflict with the
accepts no liability for any assistance with applications or customer product
short data sheet, the full data sheet shall prevail.
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications
Product specification — The information and data provided in a Product
and products planned, as well as for the planned application and use of
data sheet shall define the specification of the product as agreed between
customer’s third party customer(s). Customers should provide appropriate
NXP Semiconductors and its customer, unless NXP Semiconductors and
design and operating safeguards to minimize the risks associated with
customer have explicitly agreed otherwise in writing. In no event however,
their applications and products. NXP Semiconductors does not accept any
shall an agreement be valid in which the NXP Semiconductors product
liability related to any default, damage, costs or problem which is based
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
on any weakness or default in the customer’s applications or products, or
the application or use by customer’s third party customer(s). Customer is
responsible for doing all necessary testing for the customer’s applications
and products using NXP Semiconductors products in order to avoid a
default of the applications and the products or of the application or use by
20.3 Disclaimers
Limited warranty and liability — Information in this document is believed
customer’s third party customer(s). NXP does not accept any liability in this
respect.
to be accurate and reliable. However, NXP Semiconductors does not
Limiting values — Stress above one or more limiting values (as defined in
give any representations or warranties, expressed or implied, as to the
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
accuracy or completeness of such information and shall have no liability
damage to the device. Limiting values are stress ratings only and (proper)
for the consequences of use of such information. NXP Semiconductors
operation of the device at these or any other conditions above those
takes no responsibility for the content in this document if provided by an
given in the Recommended operating conditions section (if present) or the
information source outside of NXP Semiconductors. In no event shall NXP
Characteristics sections of this document is not warranted. Constant or
Semiconductors be liable for any indirect, incidental, punitive, special or
repeated exposure to limiting values will permanently and irreversibly affect
consequential damages (including - without limitation - lost profits, lost
the quality and reliability of the device.
savings, business interruption, costs related to the removal or replacement
of any products or rework charges) whether or not such damages are based
on tort (including negligence), warranty, breach of contract or any other
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
legal theory. Notwithstanding any damages that customer might incur for
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
any reason whatsoever, NXP Semiconductors’ aggregate and cumulative
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
liability towards customer for the products described herein shall be limited
in accordance with the Terms and conditions of commercial sale of NXP
agreement shall apply. NXP Semiconductors hereby expressly objects to
Semiconductors.
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or
notice. This document supersedes and replaces all information supplied prior
the grant, conveyance or implication of any license under any copyrights,
to the publication hereof.
patents or other industrial or intellectual property rights.
BGU8009
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2017. All rights reserved.
Product data sheet
Rev. 7 — 20 July 2017
21 / 23
NXP Semiconductors
BGU8009
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS and LTE B32
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
such automotive applications, use and specifications, and (b) whenever
customer uses the product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at customer’s own
risk, and (c) customer fully indemnifies NXP Semiconductors for any liability,
damages or failed product claims resulting from customer design and use
of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications. In
the event that customer uses the product for design-in and use in automotive
applications to automotive specifications and standards, customer (a) shall
use the product without NXP Semiconductors’ warranty of the product for
20.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
BGU8009
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© NXP B.V. 2017. All rights reserved.
Product data sheet
Rev. 7 — 20 July 2017
22 / 23
NXP Semiconductors
BGU8009
SiGe:C low-noise amplifier MMIC for GPS, GLONASS, Galileo and COMPASS and LTE B32
Contents
1
2
3
4
5
6
6.1
7
8
General description ............................................ 1
Features and benefits .........................................1
Applications .........................................................2
Quick reference data .......................................... 2
Ordering information .......................................... 3
Marking .................................................................3
Marking code description ...................................3
Block diagram ..................................................... 4
Pinning information ............................................ 4
Pinning ...............................................................4
Pin description ...................................................4
Limiting values ....................................................5
Recommended operating conditions ................5
Thermal characteristics ......................................5
Characteristics GNSS band L1 .......................... 6
Graphs GNSS band L1 ....................................... 8
Characteristics LTE B32 ...................................16
Application information ....................................17
GNSS and LTE B32 LNA ................................17
Package outline .................................................19
Handling information ........................................20
Abbreviations .................................................... 20
Revision history ................................................ 20
Legal information ..............................................21
8.1
8.2
9
10
11
12
13
14
15
15.1
16
17
18
19
20
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section 'Legal information'.
© NXP B.V. 2017.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 20 July 2017
Document number:
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