BGY122ATRAY [NXP]
RF/Microwave Amplifier, 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER;
| 型号： | BGY122ATRAY |
| 厂家： | 
NXP |
| 描述： | RF/Microwave Amplifier, 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 放大器 |
| 文件： | 总16页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BGY122A; BGY122B
UHF amplifier modules
1998 May 11
Product specification
Supersedes data of 1997 Dec 01
Philips Semiconductors
Product specification
UHF amplifier modules
BGY122A; BGY122B
FEATURES
PINNING - SOT388B
PIN
• Single 4.8 V nominal supply voltage
• 1.2 W output power
DESCRIPTION
1
RF input
• Easy control of output power by DC voltage
• Very high efficiency (typ. 55%)
• Silicon bipolar technology
2
VC
VS
3
4
RF output
ground
• Standby current less than 100 µA.
Flange
APPLICATIONS
• Hand-held transmitting equipment operating in the
handbook, halfpage
824 to 849 MHz and 872 to 905 MHz frequency ranges.
DESCRIPTION
The BGY122A and BGY122B are three-stage UHF
amplifier modules in a SOT388B package. Each module
consists of three NPN silicon planar transistor dies
mounted together with matching and bias circuit
components on a metallized ceramic substrate.
The modules produce an output power of 1.2 W into a load
of 50 Ω with an RF drive power of 2 mW.
1
2
3
4
Top view
MBK197
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C.
MODE OF
OPERATION
f
VS
(V)
PL
(W)
Gp
(dB)
η
(%)
ZS; ZL
(Ω)
TYPE
(MHz)
BGY122A
BGY122B
CW
CW
824 to 849
872 to 905
4.8
4.8
1.2
1.2
≥27.8
≥27.8
typ. 55
typ. 55
50
50
1998 May 11
2
Philips Semiconductors
Product specification
UHF amplifier modules
BGY122A; BGY122B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
DC supply voltage
CONDITIONS
VC = 0; PD = 0
MIN.
MAX.
10
UNIT
VS
−
−
−
−
V
VC
PD
PL
DC control voltage
3.5
V
input drive power
5
mW
W
load power
1.6
Tstg
Tmb
storage temperature
operating mounting base temperature
−40
−30
+100
+100
°C
°C
MDA147
2.0
handbook, halfpage
P
L
(W)
1.6
VSWR = 1:1
VSWR = 3:1
1.2
0.8
0.4
0
0
40
80
120
o
T
( C)
mb
VS = 6.5 V.
Fig.2 Load power derating curve.
1998 May 11
3
Philips Semiconductors
Product specification
UHF amplifier modules
BGY122A; BGY122B
CHARACTERISTICS
ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; VC ≤ 3 V; Tmb = 25 °C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN.
frequency
TYP. MAX. UNIT
f
BGY122A
BGY122B
824
−
−
−
−
−
−
55
−
−
−
−
849
905
100
500
−
MHz
MHz
µA
872
−
IQ
total quiescent current
control current
load power
VC = 0; PD < −60 dBm
IC
adjust VC for PL = 1.2 W
VC = 3 V
−
µA
PL
Gp
η
1.2
27.8
50
−
W
power gain
adjust VC for PL = 1.2 W
adjust VC for PL = 1.2 W
adjust VC for PL = 1.2 W
adjust VC for PL = 1.2 W
adjust VC for PL = 1.2 W
−
dB
efficiency
−
%
H2
H3
second harmonic
third harmonic
input VSWR
stability
−36
−36
3 : 1
−60
dBc
dBc
−
VSWRin
−
PD = 0 to +6 dBm; VS = 4 to 6.5 V;
VC = 0 to 3 V; PL ≤ 1.2 W;
−
dBc
VSWR ≤ 6 : 1 through all phases
isolation
VC = 0
−
−
−40
−
dBm
dBm
Pn
noise power
adjust VC for PL = 1.2 W;
−
−90
bandwidth = 30 kHz; fn = fo + 45 MHz
ruggedness
VS = 6.5 V; adjust VC for PL = 1.4 W;
no degradation
VSWR ≤ 10 : 1 through all phases
1998 May 11
4
Philips Semiconductors
Product specification
UHF amplifier modules
BGY122A; BGY122B
MDA148
MDA149
80
2.0
handbook, halfpage
handbook, halfpage
P
η
(%)
L
(W)
1.6
60
40
20
824 MHz
849 MHz
849 MHz
1.2
0.8
824 MHz
0.4
0
0
0
0.4
0.8
1.2
1.6
2.0
(W)
0
1
2
3
4
V
(V)
P
C
L
ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; Tmb = 25 °C.
ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; Tmb = 25 °C.
Fig.3 Load power as a function of control voltage;
BGY122A; typical values.
Fig.4 Efficiency as a function of load power;
BGY122A; typical values.
MDA151
MDA150
2.0
2.0
handbook, halfpage
handbook, halfpage
P
P
L
L
(W)
(W)
1.6
1.6
849 MHz
V
= 4.8 V
4 V
S
824 MHz
1.2
1.2
0.8
0.8
0.4
0
0.4
0
−40
0
40
80
120
( C)
820
830
840
850
860
o
f (MHz)
T
mb
ZS = ZL = 50 Ω; PD = 2 mW; VC = 3 V; Tmb = 25 °C.
ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; VC = 3 V.
Fig.5 Load power as a function of frequency;
BGY122A; typical values.
Fig.6 Load power as a function of mounting base
temperature; BGY122A; typical values.
1998 May 11
5
Philips Semiconductors
Product specification
UHF amplifier modules
BGY122A; BGY122B
MDA153
MDA152
4
3.0
40
handbook, halfpage
handbook, halfpage
P
L
(dBm)
V
C
(V)
VSWR
in
2.5
3
20
V
C
849 MHz
2.0
1.5
1.0
2
0
824 MHz
VSWR
in
1
−20
0
820
−40
−40
−30
−20
−10
0
P
10
(dBm)
830
840
850
860
f (MHz)
D
ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; PL = 1.2 W; Tmb = 25 °C.
ZS = ZL = 50 Ω; VS = 4.8 V; VC = 3 V; Tmb = 25 °C.
Fig.7 Control voltage and input VSWR as functions
of frequency; BGY122A; typical values.
Fig.8 Load power as a function of drive power;
BGY122A; typical values.
MDA154
MDA155
−30
2.0
handbook, halfpage
P
L
H
H
3
2,
(W)
1.6
(dBc)
H
H
3
−40
2
1.2
872 MHz
905 MHz
0.8
−50
−60
0.4
0
820
830
840
850
860
0
1
2
3
4
f (MHz)
V
(V)
C
ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; PL = 1.2 W; Tmb = 25 °C.
ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; Tmb = 25 °C.
Fig.9 Harmonics as a function of frequency;
BGY122A; typical values.
Fig.10 Load power as a function of control voltage;
BGY122B; typical values.
1998 May 11
6
Philips Semiconductors
Product specification
UHF amplifier modules
BGY122A; BGY122B
MDA157
MDA156
2.0
80
handbook, halfpage
handbook, halfpage
P
η
(%)
L
(W)
1.6
V
= 4.8 V
4 V
S
60
40
872 MHz
905 MHz
1.2
0.8
20
0
0.4
0
840
860
880
900
920
0
0.4
0.8
1.2
1.6
2.0
(W)
f (MHz)
P
L
ZS = ZL = 50 Ω; PD =2 mW; VS = 4.8 V; Tmb = 25 °C.
ZS = ZL = 50 Ω; PD = 2 mW; VC = 3 V; Tmb = 25 °C.
Fig.11 Efficiency as a function of load power;
BGY122B; typical values.
Fig.12 Load power as a function of frequency;
BGY122B; typical values.
MDA160
MDA158
40
2.0
handbook, halfpage
handbook, halfpage
P
P
L
(dBm)
L
(W)
1.6
872 MHz
20
905 MHz
1.2
905 MHz
0
872 MHz
0.8
−20
0.4
0
−40
−40
−30
−20
−10
0
P
10
(dBm)
−40
0
40
80
120
( C)
o
T
D
mb
ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; VC = 3 V.
ZS = ZL = 50 Ω; VS = 4.8 V; VC = 3 V; Tmb = 25 °C.
Fig.13 Load power as a function of mounting base
temperature; BGY122B; typical values.
Fig.14 Load power as a function of drive power;
BGY122B; typical values.
1998 May 11
7
Philips Semiconductors
Product specification
UHF amplifier modules
BGY122A; BGY122B
MDA159
MDA161
4
−30
3.0
handbook, halfpage
V
C
(V)
VSWR
H
H
in
2,
3
(dBc)
2.5
3
H
3
−40
V
C
2.0
1.5
1.0
2
H
2
VSWR
in
−50
−60
1
0
840
840
860
880
900
920
860
880
900
920
f (MHz)
f (MHz)
ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; PL = 1.2 W; Tmb = 25 °C.
ZS = ZL = 50 Ω; PD = 2 mW; VS = 4.8 V; PL = 1.2 W; Tmb = 25 °C.
Fig.15 Control voltage and input VSWR as functions
of frequency; BGY122B; typical values.
Fig.16 Harmonics as a function of frequency;
BGY122B; typical values.
pin
numbers
1
2
3
4
L2
C4
L1
Z
Z
1
2
C1
C2
C6
C5
C3
RF input
V
V
RF output
MSA914
C
S
Fig.17 Test circuit.
8
1998 May 11
Philips Semiconductors
Product specification
UHF amplifier modules
BGY122A; BGY122B
90
1
2
3 4
50 Ω
input
50 Ω
output
47
MBH435
V
V
S
C
Dimensions in mm.
Fig.18 Printed-circuit board test-fixture.
List of components (See Figs 17 and 18)
COMPONENT
DESCRIPTION
VALUE
100 nF
CATALOGUE NO.
C1, C4
C2, C5
C3, C6
L1, L2
Z1, Z2
multilayer ceramic chip capacitor
tantalum capacitor
2222 852 47104
2.2 µF; 35 V
−
multilayer ceramic chip capacitor
Grade 4S2 Ferroxcube chip bead
stripline; note 1
33 pF
−
2222 851 13339
4330 030 36300
−
50 Ω
Note
1. The striplines are on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (εr = 2.2); thickness
1
⁄
32 inch.
1998 May 11
9
Philips Semiconductors
Product specification
UHF amplifier modules
BGY122A; BGY122B
SOLDERING
The indicated temperatures are those at the solder
interfaces.
MGM159
300
handbook, halfpage
Advised solder types are types with a liquidus less than or
T
(°C)
equal to 210 °C.
Solder dots or solder prints must be large enough to wet
the contact areas.
200
100
Soldering can be carried out using a conveyor oven, a hot
air oven, an infrared oven or a combination of these ovens.
A double reflow process is permitted.
Hand soldering must be avoided because the soldering
iron tip can exceed the maximum permitted temperature of
250 °C and damage the module.
0
0
The maximum allowed temperature is 250 °C for a
maximum of 5 seconds.
1
2
3
4
5
t (min)
The maximum ramp-up is 10 °C per second.
The maximum cool-down is 5 °C per second.
Fig.19 Recommended reflow temperature profile.
Cleaning
The following fluids may be used for cleaning:
• Alcohol
• Bio-Act (Terpene Hydrocarbon)
• Acetone.
Ultrasonic cleaning should not be used since this can
cause serious damage to the product.
1998 May 11
10
Philips Semiconductors
Product specification
UHF amplifier modules
BGY122A; BGY122B
17.7
12.5
12
6
4
8.75
6.75
12.5
footprint metallization
1
0.57
0.7
solder area
1.8
2.9
occupied area
1.37
5.08
1.7
2.54
5.08
17.9
17.1
12.4
12.1
6.4
solder area
7.55
5.55
2.45
1.67
2.7
1.1
0.5
1.37
5.08
1.5
2.54
5.08
MGM150
Dimensions in mm.
Fig.20 Footprint SOT388B.
11
1998 May 11
Philips Semiconductors
Product specification
UHF amplifier modules
BGY122A; BGY122B
PACKAGE OUTLINE
Rectangular single-ended surface-mount package; metal cap; 4 in-line leads
SOT388B
U
A
y
U
1
E
Q
1
2
3
4
L
c
b
w
M
e
1
Z
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
c
e
e
E
L
Q
U
U
w
y
Z
1
1
0.30
0.20
2.2
1.8
0.56
0.46
12.2
11.8
0.7
0.3
3.4
3.0
17.3
16.9
6.0
5.6
2.3
1.9
mm
5.08
2.54
0.25
0.15
REFERENCES
JEDEC
EUROPEAN
ISSUE DATE
PROJECTION
OUTLINE
VERSION
IEC
EIAJ
97-11-19
SOT388B
1998 May 11
12
Philips Semiconductors
Product specification
UHF amplifier modules
BGY122A; BGY122B
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 May 11
13
Philips Semiconductors
Product specification
UHF amplifier modules
BGY122A; BGY122B
NOTES
1998 May 11
14
Philips Semiconductors
Product specification
UHF amplifier modules
BGY122A; BGY122B
NOTES
1998 May 11
15
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© Philips Electronics N.V. 1998
SCA60
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Printed in The Netherlands
125108/00/04/pp16
Date of release: 1998 May 11
Document order number: 9397 750 03828
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