BGY282 [NXP]
dual band UHF amplifier module for GSM900 and GSM1800; 对于GSM900和GSM1800双频超高频放大器模块
| 型号： | BGY282 |
| 厂家： | 
NXP |
| 描述： | dual band UHF amplifier module for GSM900 and GSM1800 |
| 文件： | 总12页 (文件大小：388K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BGY282
dual band UHF amplifier module
for GSM900 and GSM1800
Preliminary specification
2001 Dec 04
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800 BGY282
FEATURES
PINNING - SOT632A
PIN
• Dual band GSM amplifier
DESCRIPTION
• 3.5 V nominal supply voltage
1
RF input 1 (GSM900)
VAPC
• 33 dBm output power for GSM1800
• 35 dBm output power for GSM900
• Easy output power control by DC voltage
• Internal input and output matching
• Easy band selection by DC voltage
• Suited for GPRS class 12 (duty cycle 4 : 8).
2
3, 6, 9, 12
Ground
4
5
VS1 (GSM900)
RF output 1 (GSM900)
RF output 2 (GSM1800)
7
8
VS2 (GSM1800)
10
11
Vband
RF input 2 (GSM1800)
APPLICATIONS
• Digital cellular radio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in two
frequency bands: 880 to 915 MHz and
1710 to 1785 MHz.
1
2
3
4
5
12
6
DESCRIPTION
The BGY282 is a power amplifier module in a SOT632A
surface mounted ceramic package with a plastic cap.
The module consists of two separated line-ups, one for
GSM900 and one for GSM1800 with internal power
control, input and output matching.
11
10
9
8
7
Bottom view
MBL253
Fig.1 Simplified outline
QUICK REFERENCE DATA
RF performance at Tmb = 25 °C.
MODE OF
OPERATION
f
VS
(V)
VAPC
(V)
PL
(dBm)
η
(%)
ZS, ZL
(Ω)
(MHz)
880 to 915
3.5
3.5
≤2.2
≤2.2
typ. 35
typ. 33
50
45
50
50
Pulsed; δ = 1 : 8
1710 to 1785
2001 Dec 04
2
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
BGY282
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
APC = 0; RFIN = off
APC > 0.5 V; RFIN = on
MIN. MAX. UNIT
V
V
−
7
V
V
S1, VS2
DC supply voltage
−
5.5
3
V
VAPC
DC control voltage
input drive power
−
V
P
D1, PD2
−
10
36
35
35
34
7.5
4.5
dBm
dBm
dBm
dBm
dBm
W
PL1
PL1
PL2
PL2
PS1
PS2
Tstg
Tmb
load power 1 (GSM900)
−
load power 1 (GSM900)
δ = 4 : 8; VSWRout > 2 : 1
−
load power 2 (GSM1800)
−
load power 2 (GSM1800)
δ = 4 : 8; VSWRout > 2 : 1
δ = 4 : 8
−
total power from supply during pulse (GSM900)
total power from supply during pulse (GSM1800)
storage temperature
−
δ = 4 : 8
−
W
−40
−30
+100 °C
+90 °C
operating mounting base temperature
Note: PL is forward power, measured in a coupler.
2001 Dec 04
3
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
BGY282
CHARACTERISTICS
ZS = ZL = 50 Ω; PD1,2 = 0 dBm; VS1 = VS2 = 3.5 V; VAPC ≤ 2.2 V; Tmb = 25 °C; tp = 575 µs; δ = 1 : 8;
f = 880 to 915 MHz (GSM900); f = 1710 to 1785 MHz (GSM1800); measured on demoboard of fig 7; unless otherwise
specified.
SYMBOL
PARAMETER
CONDITIONS
GSM1800 selected
MIN.
TYP. MAX.
UNIT
Vband
band switch voltage
0
−
0.7
5.5
30
10
2
V
V
GSM900 selected
1.7
−
−
Iband
IL
band switch current
leakage current
−
µA
VAPC = 0.2 V; PD1,2 = 0 mW
−
−
µA
ICM1, ICM2 peak control current
−
−
mA
PD1
PD2
input drive power (GSM900)
−3
−3
34.7
34.2
32.3
31.7
43
38
−
−
4
dBm
dBm
dBm
dBm
dBm
dBm
%
input drive power (GSM1800)
2
5
VAPC = 2.2 V
35
34.5
33
32.3
50
45
−
−
PL1
PL2
load power GSM900
VAPC = 2.2 V; VS1 = 3.1 V
−
VAPC = 2.2 V
−
load power GSM1800
VAPC = 2.2 V; VS1 = 3.1 V
VAPC = 2 V
−
η1
η2
efficiency GSM900
efficiency GSM1800
harmonics GSM900
harmonics GSM1800
−
VAPC = 2 V
−
%
PL1 = 34.7 dBm
−38
−35
3 : 1
dBc
dBc
H2, H3
P
L2 = 32.3 dBm
−
−
VS1,2 = 3.1 to 4.4 V; PD1,2 = 0 dBm;
−
input VSWR of active device PL1 = 5 to 34.7 dBm;
L2 = 0 to 32.3 dBm
P
VSWRin
input VSWR of inactive
device
VS1,2 = 3.1 to 5.15 V; VAPC ≤ 0.5 V
−
−
8 : 1
VS1,2 = 3 to 5 V; PD1 = 0 to 3 dBm;
−
−
−60
dBc
dBc
PD2 = 0 to 5 dBm; PL1 = <35 dBm;
PL2 = <33 dBm; VSWR = 6 : 1 through
all phases
stability
VS1,2 = 3.1 to 4.2 V; PD1 = 0 to 3 dBm;
−
−60
PD2 = 0 to 5 dBm; PL1 = <34 dBm;
PL2 = <32 dBm; VSWR = 6 : 1 through
all phases; δ = 4 : 8
isolation
VAPC = 0.5 V; PD1 = 3 dBm;
−
−
−
−
−36
−20
dBm
dBm
PD2 = 5 dBm
second harmonic isolation
PL1 = 34.7 dBm
from GSM900 into GSM1800
maximum control slope
carrier rise time
−5 dBm < PL1,2 < PL max
120
−
200
2
dB/V
tr
tf
PL1 = 5 to 34 dBm; PL2 = 0 to 32 dBm;
time to settle within −0.5 dB of final PL
−
1.5
µs
carrier fall time
PL1 = 5 to 34 dBm; PL2 = 0 to 32 dBm;
−
1.5
2
µs
time to settle within −0.5 dB of final PL
2001 Dec 04
4
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
BGY282
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX.
UNIT
dBm
PL1 ≤ 34 dBm; bandwidth = 100 kHz;
f = 925 MHz
−
−
−71
−80
−76
6
noise power GSM900
PL1 ≤ 34 dBm; bandwidth = 100 kHz;
f = 935 MHz
−
−
−
−
−
−
dBm
Pn
noise power GSM1800
AM/PM conversion
PL2 ≤ 32 dBm; bandwidth = 100 kHz;
f = 1805 MHz
dBm
PD1,2 = −0.5 to 0.5 dBm;
deg/dB
P
P
L1 = 5 to 34 dBm; PL2 = 0 to 32 dBm;
L1,2 = constant during measurement
AM/AM conversion
P
P
D1,2 = 4 %; f = 100 kHz;
L1 = 5 to 34.7 dBm;
−
−
−
30
%
PL2 = 0 to 32.3 dBm
CG
CG
conversion gain GSM900
PD1 = 0 dBm @ 915 MHz;
25
−
dB
P
L1 = 34 dBm;
Pi1 = −50 dBm @ 905 MHz;
CG = P925 − Pi1
conversion gain GSM1800
PD2 = 0 dBm @ 1785 MHz;
PL2 = 32 dBm;
−
25
−
dB
Pi2 = −50 dBm @ 1765 MHz;
CG = P1805 − Pi2
3 dB control bandwidth
GSM900, GSM1800
PL1 = 5 to 34 dBm; PL2 = 0 to 32 dBm 0.5
−
−
−
MHz
dB
power drop 4 slot burst
GSM900, GSM1800
VAPC = 2.2 V; difference PL with
−
0.4
δ = 1 : 8 and δ = 4 : 8
VS1,2 = 5 V; PD1 = 0 to 3 dBm;
P
D2 = 0 to 5 dBm; PL1 = <35 dBm;
no degradation
no degradation
no degradation
PL2 = <33 dBm; VSWR ≤6 : 1 through
all phases
VS1,2 = 4.2 V; PD1 = 0 to 3 dBm;
PD2 = 0 to 5 dBm; PL1 = <35 dBm;
ruggedness
PL2 = <33 dBm; VSWR ≤10 : 1
through all phases
V
P
S1,2 = 4.2 V; PD1 = 0 to 3 dBm;
D2 = 0 to 5 dBm PL1 = <34 dBm;
PL2 = <32 dBm; VSWR ≤6 : 1 through
all phases; δ = 4 : 8
2001 Dec 04
5
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
BGY282
40
30
20
10
0
50
40
30
20
10
0
(1) (2)
PL
(dBm)
η
(%)
1785 MHz
1710 MHz
(3) (4)
915 MHz
(3)
(4)
880 MHz
(1)
(2)
-10
-20
-30
1
1.5
2
2.5
C (V)
20
25
30
35
40
PL (dBm)
V
(1) = 880 MHz
(2) = 915 MHz
(3) = 1710 MHz
(4) = 1785 MHz
ZS = ZL = 50 Ω; VS = 3.5 V; PD = 0 dBm;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
ZS = ZL = 50 Ω; VS = 3.5 V; PD = 0 dBm;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
Fig.3 Efficiency as a function of load power;
typical values.
Fig.2 Load power as a function of control voltage;
typical values.
-20
H2
-20
H3
(dBc)
(dBc)
-30
1710 MHz 1785 MHz
-40
-40
880 MHz
915 MHz
-50
-60
-70
-80
880 MHz 915 MHz
-60
1710 MHz
1785 MHz
-80
20
25
30
35
40
PL (dBm)
20
25
30
35
40
PL (dBm)
ZS = ZL = 50 Ω; VS = 3.5 V; PD = 0 dBm;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
ZS = ZL = 50 Ω; VS = 3.5 V; PD = 0 dBm;
Tmb = 25 °C; δ = 1 : 8; tp = 575 µs.
Fig.4 Second harmonic as a function of load
power; typical values.
Fig.5 Third harmonic as a function of load power;
typical values.
2001 Dec 04
6
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for
GSM900 and GSM1800
BGY282
APPLICATION INFORMATION
PAM1
6
GND
RF output 2
RF output 1
7
5
4
Z0
Z0
DCS out
8
VS2
VS1
+VS
+VS
C2
C4
C3
C1
9
3
GND
GND
C8
C7
10
11
2
1
Vband
Vapc
VB
VC
Z0
Z0
DCS in
RF in
RF output 2
RF output 1
GND
12
Fig.6 Test circuit.
List of components
QUANTITY LOCATION VALUE / TYPE
DESCRIPTION
REMARK
SUPPLIER
1
PCB
Roland
Haefele
1
4
PAM1
BGY282
Power amplifier module
Jack assembly end launch Type no. 142-0701-881
SMA connector
Johnson
Components
1
1
1
1
1
1
1
C1
C2
C3
C4
C7
C8
R1
100 µF / 35 V
100 µF / 35 V
100 nF
Electrol. capacitor
Type no. ECEV1VA101P
Type no. ECEV1VA101P
Matsushita
Matsushita
Electrol. capacitor
0805 size SMD capacitor
0805 size SMD capacitor
0603 size SMD capacitor
0603 size SMD capacitor
100 nF
680 pF
100 pF
100 Ohms / 0.1 0805 size SMD resistor
W
4
Z0
50 Ω
stripline; note 1
width 1.4 mm
Note
1. The striplines are on a double etched printed circuit board (εr = 4.6); thickness 0.8 mm
2001 Dec 04
7
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for
GSM900 and GSM1800
BGY282
TOP VIEW
Fig.7 PCB test circuit.
SOLDERING
MGM159
The indicated temperatures are those at the solder
interfaces.
300
handbook, halfpage
T
(°C)
Advised solder types are types with a liquidus less or
equal to 210 °C.
200
100
Soldering can be carried out using a conveyor oven, a hot
air oven, an infrared oven or a combination of these
ovens. A double reflow process can be used.
Hand soldering is not recommended because of the
nature of the contacts.
The maximum allowed temperature is 250 °C for a
maximum of 5 seconds.
The maximum ramp-up is 10 °C per second.
The maximum cool-down is 5 °C per second.
0
0
1
2
3
4
5
t (min)
Fig.8 Recommended reflow temperature profile.
2001 Dec 04
8
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
BGY282
Fig.9 Soldering footprint for SOT632A.
2001 Dec 04
9
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
BGY282
PACKAGE OUTLINE
Leadless surface mounted package; plastic cap; 12 terminations
SOT632A
Z
(2×)
D
e
e
1
Z
(4×)
Z (2×)
(4×)
(4×)
5
1
2
3
4
5
e
2
(2×)
Z
(6×)
2
12
6
Z
7
(4×)
Z
(8×)
4
L
(12×)
11
10
9
8
7
Z
(4×)
Z
3
(2×)
1
Z
(4×)
b (8×)
b
(4×)
Z
Z
9
6
1
8
Dimensions of terminations
D
Dimensions of solderresist
D
1
A
c
E
E
1
pin 1 index
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
A
b
b
c
D
D
E
E
1
e
e
e
L
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
Z
9
UNIT
1
1
1
2
D
1
2
3
4
5
6
7
8
1.8 1.5 3.75 0.61 14.05 13.35 8.3 7.85
1.4 1.4 3.65 0.49 13.45 13.05 7.7 7.55
1.45 3.75 1.55 2.45 1.55 1.35 0.75 0.7 0.625 1.55 0.75 0.85
1.35 3.65 1.45 2.35 1.45 1.25 0.65 0.6 0.525 1.45 0.65 0.75
mm
2.1 3.275 4.0
REFERENCES
EUROPEAN
ISSUE DATE
PROJECTION
OUTLINE
VERSION
IEC
JEDEC
EIAJ
01-09-26
01-11-20
SOT632A
2001 Dec 04
10
Philips Semiconductors
Preliminary specification
dual band UHF amplifier module for GSM900 and GSM1800
BGY282
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Product data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Dec 04
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
budgetnum/printrun/ed/pp12
Date of release: 2001 Dec 04
Document order number: 9397 750 09163
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