BLA0912-250,112 [NXP]
BLA0912-250;
| 型号： | BLA0912-250,112 |
| 厂家： | 
NXP |
| 描述： | BLA0912-250 局域网 放大器 CD 晶体管 |
| 文件： | 总13页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BLA0912-250
Avionics LDMOS transistor
Rev. 3 — 26 November 2010
Product data sheet
1. Product profile
1.1 General description
Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead
SOT502A flange package with a ceramic cap. The common source is connected to the
mounting flange.
Table 1.
Test information
Typical RF performance measured in common source class-AB test circuit at PL = 250 W and 960 MHz to 1215 MHz
frequency band. Th = 25 °C; Zth(j-h) = 0.15 K/W; unless otherwise specified.
Mode of operation
f
tp
δ
VDS PL Gp
ΔGp ηD Pdroop(pulse) tr
tf
Zth(j-h) ϕins(rel)
(MHz)
(μs)
%
(V) (W) (dB) (dB) (%) (dB)
(ns) (ns) (K/W) (deg)
all modes
TCAS
960 to 1215
100 10 36 250 13.5 0.8 50 0.1
0.1 36 250 14.0 0.8 50
25
25
25
25
25
6
6
6
6
6
0.18
0.07
0.15
0.20
0.45
±5
±5
±5
±5
±5
1030 to 1090 32
1030 to 1090 128
1030 to 1090 340
0
Mode-S
2
1
36 250 13.5 0.8 50 0.1
36 250 13.5 0.8 50 0.2
JTIDS
960 to 1215
3300 22 36 200 13.0 1.2 45 0.2
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
High power gain
Easy power control
Excellent ruggedness
Source on mounting base eliminates DC isolators, reducing common mode
inductance.
1.3 Applications
Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such
as Mode-S, TCAS and JTIDS, DME or TACAN.
BLA0912-250
NXP Semiconductors
Avionics LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
1
Description
drain
Simplified outline
Graphic symbol
1
1
2
2
gate
3
[1]
2
3
source
3
sym039
[1] Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
BLA0912-250
flanged LDMOST ceramic package;
2 mounting holes; 2 leads
SOT502A
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min Max
Unit
VDS
VGS
Ptot
Tstg
Tj
drain-source voltage
-
-
-
75
V
gate-source voltage
total power dissipation
storage temperature
junction temperature
±22
700
V
Th ≤ 25 °C; tp = 50 μs; δ = 2 %
W
−65 +150 °C
200 °C
-
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Typ Unit
[1]
Zth(j-h)
transient thermal impedance from junction to
heatsink
Th = 25 °C
0.18 K/W
[1] Thermal resistance is determined under RF operating conditions; tp = 100 μs, δ = 10 %.
BLA0912-250
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 26 November 2010
2 of 13
BLA0912-250
NXP Semiconductors
Avionics LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
Tj = 25 °C; per section unless otherwise specified.
Symbol Parameter
Conditions
Min
75
4
Typ
Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 3 mA
-
-
-
-
-
V
VGS(th)
IDSS
gate-source threshold voltage
drain leakage current
VDS = 10 V; ID = 300 mA
VGS = 0 V; VDS = 36 V
5
1
-
V
-
μA
A
IDSX
drain cut-off current
VGS = VGSth + 9 V;
VDS = 10 V
45
IGSS
gfs
gate leakage current
VGS = 20 V; VDS = 0 V
VDS = 10 V; ID = 10 A
-
-
-
-
1
-
μA
S
forward transconductance
9
RDS(on) drain-source on-state resistance VGS = 9 V; ID = 10 A
60
-
mΩ
Table 7. RF characteristics
RF performance in common source class-AB circuit; Th = 25 °C; Zth = 0.15 K/W; unless otherwise
specified.
Symbol
VDS
f
Parameter
Conditions
Min Typ Max
Unit
drain-source voltage
frequency
-
-
36
V
960
250
12
40
-
-
1215 MHz
PL
output power
power gain
tp = 100 μs; δ = 10 %
PL = 250 W
-
W
dB
%
Gp
13
50
-
ηD
drain efficiency
tp = 100 μs; δ = 10 %
tp = 100 μs; δ = 10 %
Zth(j-h)
transient thermal impedance
from junction to heatsink
0.2
K/W
Th
heatsink temperature
−55
-
+70
°C
dB
dBc
ns
Pdroop(pulse) pulse droop power
tp = 100 μs; δ = 10 %
-
-
-
-
0.1 0.5
αresp(sp)
spurious response
rise time
VSWRload = 2 : 1
-
−60
50
tr
tf
25
6
fall time
25
ns
6.1 Ruggedness in class-AB operation
The BLA0912-250 is capable of withstanding a load mismatch corresponding to
VSWR = 5 : 1 through all phases under the following conditions: VDS = 36 V;
f = 960 MHz to 1215 MHz at rated load power.
BLA0912-250
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 26 November 2010
3 of 13
BLA0912-250
NXP Semiconductors
Avionics LDMOS transistor
7. Application information
7.1 Impedance information
Table 8.
Typical impedance
Typical values per section unless otherwise specified.
f
ZS
ZL
MHz
960
Ω
Ω
0.89 − j1.70
1.37 − j1.23
2.09 − j1.27
2.40 − j1.97
1.51 − j2.61
1.53 − j1.13
1.47 − j0.99
1.38 − j0.85
1.30 − j0.71
1.17 − j0.47
1030
1090
1140
1215
drain
Z
L
gate
Z
S
001aaf059
Fig 1. Definition of transistor impedance
7.2 Application circuit
L2
L1
C1
L3
L4
L5 L6
L7
L8
C2
C3
C4
C5
001aab085
See Table 9 for details of striplines.
Fig 2. Layout of class-AB application circuit
BLA0912-250
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 26 November 2010
4 of 13
BLA0912-250
NXP Semiconductors
Avionics LDMOS transistor
Table 9.
Layout details
See Figure 2.
Striplines are on a Rodgers Duroid 6010 Printed-Circuit Board (PCB); εr = 10.2 F/m;
thickness = 0.64 mm
Component
Description
Dimensions
Input circuit
L1
C1
L2
stripline
stripline
stripline
5 mm × 0.8 mm
1.2 mm × 3.5 mm
capacitor pad: 1 mm × 1 mm (1×)
curve: width 0.8 mm; angle 90°; radius 0.8 mm (10×)
vertical: 3.9 mm × 0.8 mm (2×)
vertical: 9.4 mm × 0.8 mm (3×)
horizontal: 0.5 mm × 0.8 mm (4×)
3 mm × 2 mm
L3
stripline
stripline
stripline
stripline
C2
4 mm × 6.5 mm
L4
5 mm × 1 mm
C3
8.8 mm × 30 mm + 0.2 mm × 13 mm
Output circuit
C4
L5
L6
C5
L7
stripline
stripline
stripline
stripline
stripline
0.2 mm × 13 mm + 19 mm × 17.1 mm
2.5 mm × 2.3 mm
4 mm × 1 mm
3 mm × 6.6 mm
curve: width 0.8 mm; angle 90°; radius 0.8 mm (6×)
vertical: 2.2 mm × 0.8 mm (2×)
vertical: 6 mm × 0.8 mm (1×)
horizontal: 1 mm × 0.8 mm (2×)
2.5 mm × 0.8 mm
L8
stripline
stripline
1/4 λ line
curve: width 1 mm; angle 90°; radius 0.8 mm
vertical: 5 mm × 1 mm
horizontal: 19 mm × 1 mm
BLA0912-250
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 26 November 2010
5 of 13
BLA0912-250
NXP Semiconductors
Avionics LDMOS transistor
40
40
C1
C2 C3
C4
C5
C8 C9 C10
R1
R2
60
C7
C6
001aab083
Dimensions in mm.
See Table 10 for list of components.
Fig 3. Component layout for class-AB application circuit
Table 10. List of components
See Figure 3.
Component Description
C1, C3, C9 multilayer ceramic chip capacitor 1 nF
C2, C6, C10 multilayer ceramic chip capacitor 22 pF
Value
Remarks
[1]
[2]
C4
C5
C7
C8
R1
R2
tantalum SMD capacitor
47 μF; 20 V
KEMET: T491D476M020AS
[2]
[2]
multilayer ceramic chip capacitor 56 pF
multilayer ceramic chip capacitor 47 pF
tantalum SMD capacitor
SMD resistor
22 μF; 63 V
51 Ω
0805
resistor
49.9 Ω
[1] American Technical Ceramics type 100B or capacitor of same quality.
[2] American Technical Ceramics type 100A or capacitor of same quality.
BLA0912-250
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 26 November 2010
6 of 13
BLA0912-250
NXP Semiconductors
Avionics LDMOS transistor
8. Test information
8.1 RF performance
Typical RF performance measured in common source class-AB test circuit at PL = 250 W
and 960 MHz to 1215 MHz frequency band. Th = 25 °C; Zth(j-h) = 0.15 K/W; unless
otherwise specified.
001aab078
001aab079
15
55
18
16
14
12
10
8
η
D
G
η
D
(%)
p
(5)
(1)
(dB)
13
(2)
G
G
p
p
45
(dB)
(4) (3)
11
9
35
25
15
5
6
7
4
5
940
2
990
1040
1090
1140
1190
f (MHz)
1240
0
100
200
300
P (W)
L
Th = 25 °C; VDS = 36 V; IDq = 150 mA; class-AB;
tp = 100 μs; δ = 10 %.
Th = 25 °C; VDS = 36 V; IDq = 150 mA; class-AB;
tp = 100 μs; δ = 10 %.
(1) f = 960 MHz
(2) f = 1030 MHz
(3) f = 1090 MHz
(4) f = 1140 MHz
(5) f = 1215 MHz
Fig 4. Power gain and drain efficiency as function of
frequency; typical values
Fig 5. Power gain as a function of load power;
typical values
BLA0912-250
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 26 November 2010
7 of 13
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NXP Semiconductors
Avionics LDMOS transistor
001aab080
001aab081
300
250
60
50
40
30
20
10
0
(2)
(5)
(1)
(1)
P
L
η
(%)
D
(W)
(5)
200
150
100
50
(4)
(4)
(2)
(3)
(3)
0
0
2
4
6
8
10
12
14
P (W)
16
0
50
100
150
200
250
(W)
L
300
P
i
Th = 25 °C; VDS = 36 V; IDq = 150 mA; class-AB;
tp = 100 μs; δ = 10 %.
Th = 25 °C; VDS = 36 V; IDq = 150 mA; class-AB;
tp = 100 μs; δ = 10 %.
(1) f = 960 MHz
(1) f = 960 MHz
(2) f = 1030 MHz
(3) f = 1090 MHz
(4) f = 1140 MHz
(5) f = 1215 MHz
(2) f = 1030 MHz
(3) f = 1090 MHz
(4) f = 1140 MHz
(5) f = 1215 MHz
Fig 6. Load power as a function of input power;
typical values
Fig 7. Efficiency as a function of load power;
typical values
BLA0912-250
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 26 November 2010
8 of 13
BLA0912-250
NXP Semiconductors
Avionics LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
SOT502A
D
A
F
3
D
1
U
1
B
q
c
C
1
L
p
E
E
1
H
U
2
w
M
M
M
B
A
1
A
2
w
5
b
M
M
C
Q
2
0
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
E
E
F
H
L
p
Q
q
U
U
w
w
2
UNIT
1
1
1
2
1
12.83
12.57
3.38
3.12
1.70
1.45
4.72
3.43
20.02 19.96 9.50
19.61 19.66 9.30
9.53
9.25
1.14 19.94 5.33
0.89 18.92 4.32
34.16 9.91
33.91 9.65
0.15
0.08
27.94
1.100
0.25
0.01
0.51
0.02
mm
0.505
0.495
0.133 0.067
0.123 0.057
0.186
0.135
0.788 0.786 0.374 0.375 0.045 0.785 0.210
0.772 0.774 0.366 0.364 0.035 0.745 0.170
1.345 0.390
1.335 0.380
0.006
0.003
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-12-28
03-01-10
SOT502A
Fig 8. Package outline SOT502A
BLA0912-250
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 26 November 2010
9 of 13
BLA0912-250
NXP Semiconductors
Avionics LDMOS transistor
10. Abbreviations
Table 11. Abbreviations
Acronym
DC
Description
Direct Current
DME
Distance Measuring Equipment
Joint Tactical Information Distribution System
Laterally Diffused Metal-Oxide Semiconductor
JTIDS
LDMOS
LDMOST
Mode-S
RF
Laterally Diffused Metal-Oxide Semiconductor Transistor
Mode Select
Radio Frequency
SMD
Surface Mounted Device
TACAN
TCAS
VSWR
TACtical Air Navigation
Traffic Collision Avoidance System
Voltage Standing-Wave Ratio
11. Revision history
Table 12. Revision history
Document ID
BLA0912-250 v.3
Modifications:
Release date
20101126
Data sheet status
Change notice
Supersedes
Product data sheet
-
BLA0912-250_2
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Table 10 on page 6: The remark of component C8 has been removed.
• Table 10 on page 6: The value of component C8 has been specified in more detail.
BLA0912-250_2
20040722
Product data sheet
-
BLA0912-250_N_1
BLA0912-250_N_1
20031024
Preliminary data sheet
-
9397 750 12224
BLA0912-250
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 26 November 2010
10 of 13
BLA0912-250
NXP Semiconductors
Avionics LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
12.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
12.3 Disclaimers
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
BLA0912-250
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 26 November 2010
11 of 13
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NXP Semiconductors
Avionics LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
BLA0912-250
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 26 November 2010
12 of 13
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NXP Semiconductors
Avionics LDMOS transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
3
4
5
6
6.1
7
7.1
7.2
Application information. . . . . . . . . . . . . . . . . . . 4
Impedance information. . . . . . . . . . . . . . . . . . . 4
Application circuit . . . . . . . . . . . . . . . . . . . . . . . 4
8
8.1
9
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
RF performance . . . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 26 November 2010
Document identifier: BLA0912-250
相关型号：
BLA1011-200.112
200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz.
NXP
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